TWI764972B - 半導體裝置用接合導線 - Google Patents

半導體裝置用接合導線 Download PDF

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TWI764972B
TWI764972B TW107100452A TW107100452A TWI764972B TW I764972 B TWI764972 B TW I764972B TW 107100452 A TW107100452 A TW 107100452A TW 107100452 A TW107100452 A TW 107100452A TW I764972 B TWI764972 B TW I764972B
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Taiwan
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mass
bonding wire
bonding
wire
content
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TW107100452A
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English (en)
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TW201936934A (zh
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小田大造
山田隆
江藤基稀
榛原照男
宇野智裕
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日商日鐵新材料股份有限公司
日商日鐵化學材料股份有限公司
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
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    • C22C5/04—Alloys based on a platinum group metal
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Abstract

本發明提供一種半導體裝置用之Pd被覆Cu接合導線，其即便於半導體裝置封裝中所使用之塑模樹脂中之硫含量增大之情形時，於175℃以上之高溫環境下亦可充分地獲得球接合部之接合可靠性。 於本發明之具有Cu合金芯材及形成於上述Cu合金芯材之表面之Pd被覆層之半導體裝置用接合導線中，接合導線中含有總計0.03～2質量%之Ni、Rh、Ir、Pd中之1種以上，進而含有總計0.002～3質量%之Li、Sb、Fe、Cr、Co、Zn、Ca、Mg、Pt、Sc、Y中之1種以上。藉由使用上述接合導線，即便於半導體裝置封裝中所使用之塑模樹脂中之硫含量增大之情形時，於175℃以上之高溫環境下亦可充分地獲得球接合部之接合可靠性。

Description

半導體裝置用接合導線
本發明係關於一種用以將半導體元件上之電極與外部引線等電路配線基板之配線連接之半導體裝置用接合導線。
目前，作為將半導體元件上之電極與外部引線之間接合之半導體裝置用接合導線(以下稱為「接合導線」)，主要使用線徑15～50 μm左右之細線。接合導線之接合方法通常為超音波併用熱壓接方式，可使用通用接合裝置、使接合導線通過其內部而用於連接之毛細管治具等。接合導線之接合製程係藉由以下方式完成：利用電弧輸入熱量將導線前端進行加熱熔融，藉由表面張力形成球(FAB：Free Air Ball(無空氣焊球))之後，於在150～300℃之範圍內進行加熱之半導體元件之電極上壓接接合(以下稱為「球接合」)該球部，繼而形成環後，於外部引線側之電極壓接接合(以下稱為「楔接合」)導線部。作為接合導線之接合對象之半導體元件上之電極使用於Si基板上使以Al為主體之合金成膜而成之電極構造，外部引線側之電極使用實施有Ag鍍覆或Pd鍍覆之電極構造等。 此前接合導線之材料係以Au為主流，但以LSI(Large Scale Integration，大規模積體電路)用途為中心不斷推進向Cu之替換。另一方面，以近年來之電動汽車或油電混合車之普及為背景，於車載用裝置用途中，對自Au替換為Cu之需求亦不斷增加。 關於Cu接合導線，提出有使用高純度Cu(純度：99.99質量%以上)者(例如專利文獻1)。Cu與Au相比有容易氧化之缺點，有接合可靠性、球形成性、楔接合性等較差之課題。作為防止Cu接合導線之表面氧化之方法，提出有Cu芯材之表面由Au、Ag、Pt、Pd、Ni、Co、Cr、Ti等金屬被覆之構造(專利文獻2)。又，提出有於Cu芯材之表面被覆Pd，且其表面由Au、Ag、Cu或該等之合金被覆之構造(專利文獻3)。 車載用裝置與通常之電子設備相比，要求於嚴酷之高溫高濕環境下之接合可靠性。尤其是將導線之球部接合於電極之球接合部之接合壽命成為最大之問題。對高溫高濕環境下之接合可靠性進行評價之方法提出有若干種方法，作為代表性之評價法，有HAST(Highly Accelerated Temperature and Humidity Stress Test)(高溫高濕環境暴露試驗)。於藉由HAST對球接合部之接合可靠性進行評價之情形時，將評價用之球接合部暴露於溫度為130℃、相對濕度為85%之高溫高濕環境下，測定接合部之電阻值之經時變化，或測定球接合部之剪切強度之經時變化，藉此評價球接合部之接合壽命。最近，於此種條件下之HAST中，要求100小時以上之接合壽命。於作為半導體裝置之封裝之塑模樹脂(環氧樹脂)中，分子骨架中包含氯(Cl)。於HAST評價條件下，分子骨架中之Cl水解而以氯化物離子(Cl- )之形式溶出。即便是具有Pd被覆層之Cu接合導線，於藉由球接合而接合於Al電極之情形時，若將Cu/Al接合界面置於130℃以上之高溫下，則亦會形成作為金屬間化合物之Cu9 Al4 ，因自塑模樹脂溶出之Cl而產生腐蝕，導致接合可靠性降低。 於專利文獻4～8中，揭示有藉由於Pd被覆Cu導線中含有選自由Ni、Pd、Pt、In、As、Te、Sn、Sb、Bi、Se、Ga、Ge所組成之群中之1種以上之元素，延緩腐蝕反應而提高高溫高濕環境下之接合可靠性之發明。 近年來，於車載用半導體裝置中，要求175℃～200℃下之球接合部之接合可靠性提高。於作為半導體裝置之封裝之塑模樹脂(環氧樹脂)中，含有矽烷偶合劑。於要求更高溫下之可靠性之適於車載之半導體等要求高密接性之情形時，添加「含硫矽烷偶合劑」。塑模樹脂中所含之硫於175℃以上(例如175℃～200℃)之條件下游離。若游離之硫與Cu接觸，則Cu之腐蝕變得強烈。若於使用Cu接合導線之半導體裝置產生Cu之腐蝕，則尤其是球接合部之接合可靠性降低。 即便於在半導體裝置封裝中所使用之塑模樹脂中使用含硫矽烷偶合劑之情形時，亦要求於175℃以上之高溫環境下確保球接合部之接合可靠性。為了達成該目的，揭示有使Pd被覆Cu接合導線之Cu芯材中含有各種合金元素之發明。於專利文獻6～9中，揭示有藉由於Pd被覆Cu導線中含有特定量之選自由Pt、Pd、Rh、Ni、As、Te、Sn、Sb、Bi、Se、Ni、Ir、Zn、Rh、In所組成之群中之1種以上之元素，分別可改善175℃以上之高溫環境下之球接合部之接合可靠性。 於使用Pd被覆Cu接合導線進行球接合時，為了實現良好之球形狀，又，為了改善球接合部之壓扁形狀而改善球接合部形狀之真圓性，揭示有於Pd被覆Cu接合導線中含有微量成分之發明。於專利文獻4～9中，藉由於導線中分別含有選自由P、B、Be、Fe、Mg、Ti、Zn、Ag、Si、Ga、Ge、Ca、La所組成之群中之1種以上之元素0.0001～0.01質量%(1～100質量ppm)，實現良好之球形狀，或者改善球接合部之壓扁形狀。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開昭61-48543號公報 [專利文獻2]日本專利特開2005-167020號公報 [專利文獻3]日本專利特開2012-36490號公報 [專利文獻4]日本專利第5893230號公報 [專利文獻5]日本專利第5964534號公報 [專利文獻6]日本專利第5912005號公報 [專利文獻7]日本專利第5937770號公報 [專利文獻8]日本專利第6002337號公報 [專利文獻9]日本專利第5912008號公報
[發明所欲解決之問題] 如上所述，即便於在半導體裝置封裝中所使用之塑模樹脂中使用含硫矽烷偶合劑之情形時，藉由使Pd被覆Cu接合導線之Cu芯材中含有各種合金元素，於175℃以上之高溫環境下球接合部之接合可靠性提高亦得以實現(專利文獻6～9)。 另一方面，塑模樹脂中之硫含量於近年來有增加之傾向。先前係使用含有含硫矽烷偶合劑之市售之環氧樹脂。相對於此，以提高接合導線之對引線框架、半導體晶片之密接性，藉此提高耐回焊性為目的，於最近之環氧樹脂中，硫含量較先前增大。本發明者等人發現：若使用如此硫含量增大之環氧樹脂作為半導體裝置封裝之塑模樹脂，則即便於使用專利文獻6～9中所記載之發明之情形時，亦有於175℃以上之高溫環境下無法充分地獲得球接合部之接合可靠性之情況。 本發明之目的在於提供一種半導體裝置用接合導線，其係以Pd被覆Cu接合導線為對象，即便於半導體裝置封裝中所使用之塑模樹脂中之硫含量增大之情形時，於175℃以上之高溫環境下亦可充分地獲得球接合部之接合可靠性。 [解決問題之技術方法] 即，本發明之主旨如下所述。 (1)一種半導體裝置用接合導線，其係具有Cu合金芯材及形成於上述Cu合金芯材之表面之Pd被覆層者，其特徵在於： 上述接合導線含有Ni、Rh、Ir中之1種以上(以下稱為「第1合金元素群」)、及0.05質量%以上之Pd之一者或兩者(以下稱為「第1+合金元素群」)，於第1合金元素群含量以接合導線中之含量進行評價，Pd含量基於Cu合金芯材中之Pd含量並換算為接合導線中之含量而進行評價時，於上述評價之含量中，第1合金元素群與Pd之總計之含量為0.03～2質量%， 進而，上述接合導線含有總計0.002～3質量%之Li、Sb、Fe、Cr、Co、Zn、Ca、Mg、Pt、Sc、Y中之1種以上(以下稱為「第2合金元素群」)，於含有Ca、Mg之情形時，接合導線中之Ca、Mg之含量分別為0.011質量%以上，於含有Zn之情形時，上述第1合金元素群與Zn之總計之含量為2.1質量%以上。 (2)如(1)之半導體裝置用接合導線，其中上述Pd被覆層之厚度為0.015～0.150 μm。 (3)如(1)或(2)之半導體裝置用接合導線，其於上述Pd被覆層上進而具有含有Au及Pd之合金表皮層。 (4)如(3)之半導體裝置用接合導線，其中上述含有Au及Pd之合金表皮層之厚度為0.050 μm以下。 (5)如(1)至(4)中任一項之半導體裝置用接合導線，其中上述接合導線進而含有總計0.03～3質量%之Al、Ga、Ge、In中之1種以上(以下稱為「第3合金元素群」)。 (6)如(1)至(5)中任一項之半導體裝置用接合導線，其中上述接合導線進而含有總計0.1～1000質量ppm(Sn≦10質量ppm，Bi≦1質量ppm)之As、Te、Sn、Bi、Se中之1種以上(以下稱為「第4合金元素群」)。 (7)如(1)至(6)中任一項之半導體裝置用接合導線，其中上述接合導線進而含有總計0.1～200質量ppm之B、P、La中之1種以上(以下稱為「第5合金元素群」)。 (8)如(1)至(7)中任一項之半導體裝置用接合導線，其中於上述接合導線之最表面存在Cu。 [發明之效果] 根據本發明，可提供一種半導體裝置用接合導線，其即便於半導體裝置封裝中所使用之塑模樹脂中之硫含量增大之情形時，於175℃以上之高溫環境下亦可充分地獲得球接合部之接合可靠性。
以下，對本發明依據其較佳之實施形態詳細地進行說明。於以下，關於含量、厚度、比率所表示之數值只要無特別說明，均表示平均值。 本發明之接合導線具有Cu合金芯材、及形成於上述Cu合金芯材之表面之Pd被覆層。若使用此種Pd被覆Cu接合導線，藉由電弧放電形成球，則於接合導線熔融並凝固之過程中，於球之表面形成Pd之濃度高於球之內部之合金層。若使用該球與Al電極進行接合，實施高溫高濕試驗，則於接合界面成為Pd增稠之狀態。該Pd增稠而形成之增稠層可抑制高溫高濕試驗中之接合界面上之Cu、Al之擴散，降低易腐蝕性化合物之生長速度。藉此，本發明之Pd被覆Cu接合導線可提高接合可靠性。又，由於形成於球之表面之Pd之濃度較高之合金層之耐氧化性優異，故而可減少於球形成時球之形成位置相對於接合導線之中心偏移等不良情況。 近年來，於車載用半導體裝置中，要求提高175℃～200℃下之球接合部之接合可靠性。如上所述，於作為半導體裝置之封裝之塑模樹脂(環氧樹脂)中，含有矽烷偶合劑。由於矽烷偶合劑具有提高有機物(樹脂)與無機物(矽或金屬)之密接性之作用，故而可提高與矽基板或金屬之密接性。進而，於要求更高溫下之可靠性之適於車載之半導體裝置等要求較高之密接性之情形時，添加「含硫矽烷偶合劑」。塑模樹脂中所含之硫若於175℃以上(例如175℃～200℃)之條件下使用則開始游離。而且，若於175℃以上之高溫下游離之硫與Cu接觸，則Cu之腐蝕變得強烈，生成硫化物(Cu2 S)或氧化物(CuO)。若於使用Cu接合導線之半導體裝置中產生Cu之腐蝕，則尤其是球接合部之接合可靠性降低。 作為對175℃以上之高溫環境下之球接合部之接合可靠性進行評價之方法，使用HTS(High Temperature Storage Test)(高溫放置試驗)。對暴露於高溫環境之評價用之樣品，測定球接合部之電阻值之經時變化，或測定球接合部之剪切強度之經時變化，藉此對球接合部之接合壽命進行評價。 於本發明之具有Cu合金芯材及形成於Cu合金芯材之表面之Pd被覆層之半導體裝置用接合導線中，接合導線含有Ni、Rh、Ir中之1種以上(第1合金元素群)、及0.05質量%以上之Pd之一者或兩者。第1合金元素群之含量係以接合導線中之含量進行評價。Pd含量係基於Cu合金芯材中之Pd含量並換算為接合導線中之含量而進行評價。即，Pd含量可藉由分析Cu合金芯材中之Pd含量，用該分析值乘以「(每單位長度之導線之Cu合金芯材質量)/(每單位長度之導線之接合導線質量)」而算出。Pd被覆層中之Pd不算入該Pd含量。本發明之特徵在於，於如此進行評價之含量中，第1合金元素群與Pd之總計之含量為0.03～2質量%。若半導體裝置封裝中所使用之塑模樹脂中之硫含量與含有含硫矽烷偶合劑之先前之塑模樹脂為相同程度，則藉由於上述含量之範圍內含有上述第1合金元素群及Pd之一者或兩者(以下稱為「第1+合金元素群」)，可改善175℃以上之高溫環境下之球接合部之接合可靠性。其如上述專利文獻6～9中所記載。進而，藉由於上述含量範圍內含有第1+合金元素群，可提高迴路形成性，即減少高密度安裝中成為問題之偏斜。其原因在於，藉由接合導線含有該等元素，接合導線之降伏強度提高，可抑制接合導線之變形。 又，藉由於上述含量範圍內含有第1+合金元素群，亦可提高溫度為130℃、相對濕度為85%之高溫高濕環境下之球接合部之接合壽命。可認為若如本發明般Pd被覆Cu接合導線含有第1+合金元素群，則有接合部中之Cu9 Al4 金屬間化合物之生成受到抑制之傾向。若添加該等元素，則芯材之Cu與被覆層之Pd之界面張力降低，有效地表現出球接合界面之Pd增稠。因此，推定利用Pd增稠層所得之Cu與Al之相互擴散抑制效果變強，其結果為，容易因Cl之作用腐蝕之Cu9 Al4 之生成量變少，球接合部之高溫高濕環境下之可靠性提高。 如上所述，包含Ni、Rh、Ir、Pd之第1+合金元素群之含量之下限設為於接合導線中總計0.03質量%。更佳為含量下限為0.05質量%以上、0.1質量%以上、0.2質量%以上、0.3質量%以上、或0.5質量%以上。於含有Pd之情形時，Pd含量之下限為0.05質量%。更佳為Pd含量之下限為0.1質量%以上、0.2質量%以上、0.3質量%以上、0.4質量%以上、或0.5質量%以上。另一方面，如上所述，第1+合金元素群之含量之上限設為2質量%。其原因在於，若第1+合金元素群之含量超過2質量%，則FAB硬質化而於導線接合時容易誘發晶片裂痕。更佳為含量上限為1.8質量%以下、或1.6質量%以下。 另一方面，若塑模樹脂中之硫含量增大，則於如上所述般僅含有第1+合金元素群時，有於175℃以上之高溫環境下無法充分地獲得球接合部之接合可靠性之情況。於本發明中，除含有第1+合金元素群以外，於接合導線中含有總計0.002質量%以上之Li、Sb、Fe、Cr、Co、Zn、Ca、Mg、Pt、Sc、Y中之1種以上(第2合金元素群)，藉此可解決該問題。於同時含有第1+合金元素群與第2合金元素群時，除實現含有第1+合金元素群之效果，即接合部之容易被硫腐蝕之Cu9 Al4 金屬間化合物之生成受到抑制之傾向以外，藉由含有第2合金元素群，於自密封樹脂游離之硫作用於接合部之Cu9 Al4 而進行腐蝕時，第2合金元素群能將硫捕獲(化合物化)而使之無害化。藉此，即便生成Cu9 Al4 ，亦抑制腐蝕之進行，藉此可維持HTS後之接合強度。第2合金元素群之總計之含量更佳為0.005質量%以上，進而較佳為0.02質量%以上、0.05質量%以上、0.1質量%以上、0.2質量%以上、0.3質量%以上、或0.5質量%以上。又，第2合金元素群中，關於Ca及Mg，確認於該等之含量為0.011質量%以上時發揮上述效果，因此於含有Ca、Mg之情形時，將該Ca、Mg含量之下限分別規定為0.011質量%。即，於接合導線含有Ca之情形時，接合導線中之Ca之含量為0.011質量%以上，於接合導線含有Mg之情形時，接合導線中之Mg之含量為0.011質量%以上。該Ca、Mg之含量之下限分別較佳為0.015質量%以上、0.02質量%以上、0.03質量%以上、0.05質量%以上、0.1質量%以上、0.2質量%以上、或0.3質量%以上。另一方面，第2合金元素群之總計之含量設為3質量%以下。若第2合金元素群之總計之含量超過3質量%，則FAB硬質化而於導線接合時容易誘發晶片裂痕。第2合金元素群之含量更佳為2.5質量%以下、2質量%以下、1.8質量%以下、或1.6質量%以下。再者，於含有Zn作為第2合金元素群之情形時，於第1合金元素群與Zn之總計之含量為2.1質量%以上時可獲得上述效果，並且藉由硫之捕獲效果增大而可進一步抑制腐蝕之進行。第1合金元素群與Zn之總計之含量更佳為2.5質量%以上，進而較佳為3.0質量%以上、3.5質量%以上。 於一實施形態中，本發明之接合導線必須含有Sc及Y之至少一者作為第2合金元素群。於該實施形態中，本發明之接合導線含有Sc及Y之至少一者，包含Li、Sb、Fe、Cr、Co、Zn、Ca、Mg、Pt、Sc、Y之第2合金元素群之總計之含量為0.002～3質量%。第2合金元素群之總計之含量、Ca、Mg之含量之下限、含有Zn之情形之第1合金元素群與Zn之總計之含量之較佳範圍如上所述，Sc及Y之至少一者之含量，即Sc及Y之總計之含量較佳為0.002質量%以上、0.005質量%以上、0.02質量%以上、0.05質量%以上、0.1質量%以上、0.2質量%以上、0.3質量%以上、或0.5質量%以上。又，於該實施形態中，Sc及Y之總計之含量較佳為2.5質量%以下、2質量%以下、1.8質量%以下、或1.6質量%以下。 於本發明之接合導線中，就更進一步改善車載用裝置所要求之高溫高濕環境下之球接合部之接合可靠性之觀點，抑制FAB之偏芯而獲得更良好之FAB形狀之觀點而言，Pd被覆層之厚度較佳為0.015 μm以上，更佳為0.02 μm以上，進而較佳為0.025 μm以上、0.03 μm以上、0.035 μm以上、0.04 μm以上、0.045 μm以上、或0.05 μm以上。另一方面，就抑制FAB之收縮而獲得良好之FAB形狀之觀點而言，Pd被覆層之厚度較佳為0.150 μm以下，更佳為0.140 μm以下、0.130 μm以下、0.120 μm以下、0.110 μm以下、或0.100 μm以下。 對上述接合導線之Cu合金芯材、Pd被覆層之定義進行說明。Cu合金芯材與Pd被覆層之交界以Pd濃度為基準判定。將Pd濃度為50原子%之位置設為交界，將Pd濃度為50原子%以上之區域判定為Pd被覆層，將Pd濃度未達50原子%之區域判定為Cu合金芯材。其依據在於，若於Pd被覆層中Pd濃度為50原子%以上，則由Pd被覆層之構造可獲得特性之改善效果。Pd被覆層亦可包含Pd單獨之區域、Pd與Cu於導線之深度方向具有濃度梯度之區域。於Pd被覆層中形成該具有濃度梯度之區域之理由在於，有因製造步驟中之熱處理等而使Pd與Cu之原子擴散之情況。於本發明中，所謂濃度梯度，係指於深度方向上之濃度變化之程度為每0.1 μm為10 mol%以上。進而，Pd被覆層亦可包含不可避免之雜質。 本發明之接合導線亦可於Pd被覆層上進而具有含有Au及Pd之合金表皮層。藉此，本發明之接合導線可進一步改善楔接合性。 對上述接合導線之含有Au及Pd之合金表皮層之定義進行說明。含有Au及Pd之合金表皮層與Pd被覆層之交界以Au濃度為基準判定。將Au濃度為10原子%之位置設為交界，將Au濃度為10原子%以上之區域判定為含有Au及Pd之合金表皮層，將未達10原子%之區域判定為Pd被覆層。又，即便是Pd濃度為50原子%以上之區域，若Au存在10原子%以上，則亦判定為含有Au及Pd之合金表皮層。該等之依據在於，若Au濃度為上述濃度範圍，則由Au表皮層之構造可期待特性之改善效果。含有Au及Pd之合金表皮層設為包含為Au-Pd合金且Au與Pd於導線之深度方向具有濃度梯度之區域的區域。於含有Au及Pd之合金表皮層中形成該具有濃度梯度之區域之理由在於，因製造步驟中之熱處理等而使Au與Pd之原子擴散。進而，含有Au及Pd之合金表皮層亦可包含不可避免之雜質及Cu。 於本發明之接合導線中，含有Au及Pd之合金表皮層與Pd被覆層進行反應，而可提高含有Au及Pd之合金表皮層、Pd被覆層、Cu合金芯材間之密接強度，抑制楔接合時之Pd被覆層或含有Au及Pd之合金表皮層之剝離。藉此，本發明之接合導線可進一步改善楔接合性。若含有Au及Pd之合金表皮層之厚度未達0.0005 μm，則無法充分地獲得上述效果，若變得厚於0.050 μm，則有FAB形狀偏芯之情況。就獲得良好之楔接合性之觀點而言，含有Au及Pd之合金表皮層之厚度較佳為0.0005 μm以上，更佳為0.001 μm以上、0.002 μm以上、或0.003 μm以上。就抑制偏芯而獲得良好之FAB形狀之觀點而言，含有Au及Pd之合金表皮層之厚度較佳為0.050 μm以下，更佳為0.045 μm以下、0.040 μm以下、0.035 μm以下、或0.030 μm以下。再者，含有Au及Pd之合金表皮層可藉由與Pd被覆層相同之方法形成。 本發明之接合導線亦可進而含有總計0.03～3質量%之Al、Ga、Ge、In中之1種以上(第3合金元素群)。藉此，於作為HAST評價條件之130℃、相對濕度為85%之高溫高濕環境下，可提高接合可靠性，因此較佳。可認為若Pd被覆Cu接合導線於上述含量範圍內含有第3合金元素群，則有接合部之Cu9 Al4 金屬間化合物之生成進一步受到抑制之傾向。於球接合部之FAB形成時，導線中之第3合金元素群亦於Pd被覆層擴散。可認為球接合部中之Cu與Al界面之Pd增稠層中所存在之第3合金元素群進一步提高利用Pd增稠層所得之Cu與Al之相互擴散抑制效果，其結果為，抑制於高溫高濕環境下容易腐蝕之Cu9 Al4 之生成。又，導線中所含之第3合金元素群亦存在具有直接阻礙Cu9 Al4 之形成之效果之可能性。第3合金元素群之總計之含量較佳為0.05質量%以上、0.1質量%以上、0.2質量%以上、0.3質量%以上、0.4質量%以上、或0.5質量%以上。 進而，若使用含有特定量之第3合金元素群之Pd被覆Cu接合導線形成球部，並利用掃描式電子顯微鏡(SEM：Scanning Electron Microscope)觀察FAB，則於FAB之表面可見較多直徑數十nmf左右之析出物。若利用能量分散型X射線分析(EDS：Energy Dispersive X-ray Spectroscopy)對析出物進行分析，則可確認第3合金元素群增稠。詳細之機制不明確，但可認為藉由於FAB觀察到之該析出物存在於球部與電極之接合界面，溫度為130℃、相對濕度為85%之高溫高濕環境下之球接合部之接合可靠性明顯提高。 另一方面，就獲得良好之FAB形狀之觀點，抑制接合導線之硬質化而獲得良好之楔接合性之觀點而言，第3合金元素群相對於導線整體之濃度合計為3質量%以下，較佳為2質量%以下，更佳為1.5質量%以下、或1.2質量%以下。 本發明之接合導線亦可進而含有總計0.1～1000質量ppm(Sn≦10質量ppm，Bi≦1質量ppm)之As、Te、Sn、Bi、Se中之1種以上(第4合金元素群)。藉此，於作為HAST評價條件之130℃、相對濕度為85%之高溫高濕環境下，可提高接合可靠性，因此較佳。可認為若於上述含量範圍內含有第4合金元素群，則有接合部中之Cu9 Al4 金屬間化合物之生成進一步受到抑制之傾向。若含有特定量之該等元素，則於形成球時，芯材之Cu與被覆層之Pd之界面張力降低，界面之潤濕性好轉，因此更明顯地表現出球接合界面之Pd增稠。因此，推定於HAST評價條件之高溫高濕環境下，利用Pd增稠層所得之Cu與Al之相互擴散抑制效果進一步變強，其結果為，容易因Cl之作用腐蝕之Cu9 Al4 之生成量變少，球接合部之高溫高濕環境下之接合可靠性明顯提高。 就提高溫度為130℃、相對濕度為85%之高溫高濕環境下之球接合部之接合壽命，改善接合可靠性之觀點而言，第4合金元素群相對於接合導線整體之濃度合計為0.1質量ppm以上，較佳為0.5質量ppm以上，更佳為1質量ppm以上，進而較佳為1.5質量ppm以上、2質量ppm以上、2.5質量ppm以上、或3質量ppm以上。 另一方面，就獲得良好之FAB形狀、進而良好之球接合性之觀點而言，導線中之第4合金元素群之濃度合計為1000質量ppm以下，較佳為950質量ppm以下、900質量ppm以下、850質量ppm以下、或800質量ppm以下。又，於Sn濃度超過10質量ppm之情形時，或Bi濃度超過1質量ppm之情形時，FAB形狀變得不良，因此藉由設為Sn≦10質量ppm、Bi≦1質量ppm，可進一步改善FAB形狀，因此較佳。進而，藉由將Se濃度設為4.9質量ppm以下，可進一步改善FAB形狀、楔接合性，因此更佳。 本發明之接合導線亦可進而含有0.1～200質量ppm之B、P、La中之1種以上(第5合金元素群)。藉此，可改善高密度安裝所要求之球接合部之壓扁形狀，即改善球接合部形狀之真圓性，因此較佳。 於如本發明般Pd被覆Cu接合導線含有特定量之第1+合金元素群之情形時，若進而於接合導線之最表面存在Cu，則有接合部中之Cu9 Al4 金屬間化合物之生成進一步受到抑制之傾向。於該情形時，藉由接合導線中所含之第1+合金元素群與Cu之相互作用，於FAB形成時FAB表面之Pd增稠得到促進，從而更明顯地表現出球接合界面之Pd增稠。藉此，推定利用Pd增稠層所得之Cu與Al之相互擴散抑制效果進一步變強，容易因Cl之作用腐蝕之Cu9 Al4 之生成量變少，球接合部之高溫高濕環境下之接合可靠性更進一步提高。此處，所謂最表面，係指於未實施濺鍍等之狀態下，藉由歐傑電子能譜裝置對接合導線之表面進行測定之區域。 於在Pd被覆層之最表面存在Cu之情形時，若最表面之Cu之濃度成為35原子%以上，則導線表面之耐硫化性降低，接合導線之使用壽命降低，因此有不適合實際應用之情況。因此，於在Pd被覆層之最表面存在Cu之情形時，最表面之Cu之濃度較佳為未達35原子%。最表面之Cu之濃度更佳為未達30原子%。 於使接合導線中含有第1～第5合金元素群時，採用使該等元素含有於Cu合金芯材中之方法、使該等元素覆著於Cu合金芯材或導線表面而含有之方法之任一者，均可發揮上述本發明之效果。該等成分之添加量為微量，因此添加方法之變化廣泛，無論利用何種方法添加，只要含有指定之濃度範圍之成分，則會表現出效果。關於第1+合金元素群中之Pd，由於必須與接合導線之Pd被覆層加以區分，故而基於Cu合金芯材中之Pd含量之分析值並換算為接合導線中之含量而界定。即，Pd含量可藉由對Cu合金芯材中之Pd含量進行分析，用該分析值乘以「(每單位長度之導線之Cu合金芯材質量)/(每單位長度之導線之接合導線質量)」而算出。Pd被覆層中之Pd不算入該Pd含量。 於Pd被覆層、含有Au及Pd之合金表皮層之濃度分析、Cu合金芯材中之Pd之濃度分析中，自接合導線之表面朝向深度方向，一面利用濺鍍等削去一面進行分析之方法，或者使導線剖面露出而進行線分析、點分析等之方法有效。用於該等之濃度分析之解析裝置可利用掃描式電子顯微鏡或穿透式電子顯微鏡所備置之歐傑電子能譜分析裝置、能量分散型X射線分析裝置、電子探針微量分析器等。作為使導線剖面露出之方法，可利用機械研磨、離子蝕刻法等。例如，於Cu合金芯材包含具有Pd之濃度梯度之區域之情形時，對接合導線之剖面進行線分析、點分析，對Cu合金芯材之剖面中不具有Pd之濃度梯度之區域(例如導線剖面之中心部(導線直徑之1/4之直徑之範圍))進行濃度分析即可。關於接合導線中之Pd以外之第1～第5合金元素群之微量分析，可對利用強酸使接合導線溶解而得之液體，利用ICP發射光譜分析裝置或ICP質譜分析裝置進行分析，作為接合導線全體所含之元素之濃度而檢測出。 (製造方法) 其次，對本發明之實施形態之接合導線之製造方法進行說明。接合導線係藉由製造用於芯材之Cu合金後，精細加工為導線狀，形成Pd被覆層、Au層，並進行熱處理而獲得。亦有形成Pd被覆層、Au層後，再次進行伸線及熱處理之情況。對Cu合金芯材之製造方法、Pd被覆層、含有Au及Pd之合金表皮層之形成方法、熱處理方法詳細地進行說明。 用於芯材之Cu合金係藉由使成為原料之Cu與所添加之元素一起熔解，並使之凝固而獲得。熔解可利用電弧加熱爐、高頻加熱爐、電阻加熱爐等。為了防止混入來自大氣中之O2 、H2 等氣體，較佳為於真空氛圍或者Ar或N2 等惰性氛圍中進行熔解。 於Cu合金芯材之表面形成Pd被覆層、Au層之方法有鍍覆法、蒸鍍法、熔融法等。鍍覆法可應用電解鍍覆法、無電解鍍覆法之任一者。於被稱為衝擊鍍覆、快閃鍍覆之電解鍍覆時，鍍覆速度較快，與基底之密接性亦良好。用於無電解鍍覆之溶液分為置換型與還原型，於厚度較薄之情形時，僅利用置換型鍍覆亦足夠，但於厚度較厚之情形時，於置換型鍍覆後階段性地實施還原型鍍覆較有效。 於蒸鍍法中，可利用濺鍍法、離子鍍覆法、真空蒸鍍等物理吸附，及電漿CVD(Chemical Vapor Deposition，化學氣相沈積)等化學吸附。均為乾式，無需Pd被覆層、Au層形成後之清洗，無清洗時之表面污染等擔憂。 藉由於Pd被覆層、Au層形成後進行熱處理，Pd被覆層之Pd擴散至Au層中，形成含有Au及Pd之合金表皮層。亦可自最初開始覆著含有Au及Pd之合金表皮層，而並非於形成Au層後藉由熱處理形成含有Au及Pd之合金表皮層。 對於Pd被覆層、含有Au及Pd之合金表皮層之形成，以下方法均為有效，即：於進行伸線直至最終線徑後形成該等層之方法、及於粗徑之Cu合金芯材形成該等層後進行複數次伸線直至目標線徑之方法。於前者之於最終徑形成Pd被覆層、含有Au及Pd之合金表皮層之情形時，製造、品質管理等簡便。於後者之將Pd被覆層、含有Au及Pd之合金表皮層與伸線組合之情形時，於與Cu合金芯材之密接性提高之方面有利。作為各個形成法之具體例，可舉例：於最終線徑之Cu合金芯材，一面於電解鍍覆溶液中連續掃掠導線一面形成Pd被覆層、含有Au及Pd之合金表皮層之方法，或者於電解或無電解之鍍覆浴中浸漬較粗之Cu合金芯材而形成Pd被覆層、含有Au及Pd之合金表皮層後，對導線進行伸線而達到最終線徑之方法等。 亦有於形成Pd被覆層、含有Au及Pd之合金表皮層後，進行熱處理之情況。藉由進行熱處理，原子於含有Au及Pd之合金表皮層、Pd被覆層、Cu合金芯材間擴散而密接強度提高，因此可抑制加工中之含有Au及Pd之合金表皮層或Pd被覆層之剝離，於提高生產性之方面有效。為了防止混入來自大氣中之O2 ，較佳為於真空氛圍或者Ar或N2 等惰性氛圍中進行熱處理。 如上所述，藉由調整對接合導線所實施之擴散熱處理或退火熱處理之條件，芯材之Cu於Pd被覆層或含有Au及Pd之合金表皮層中擴散，可使Cu到達接合導線之最表面，使Cu存在於最表面。作為用以使Cu存在於最表面之熱處理，如上所述，可使用用以形成含有Au及Pd之合金表皮層之熱處理。於進行用以形成合金表皮層之熱處理時，藉由選擇熱處理溫度與時間，可使Cu存在於或者不存在於最表面。進而，亦可將最表面之Cu濃度調整為特定之範圍(例如1～50原子%之範圍)。亦可藉由於合金表皮層形成時以外進行之熱處理，使Cu擴散至最表面。 如上所述，於使接合導線中含有第1～第5合金元素群時，採用使該等元素含有於Cu合金芯材中之方法、使該等元素覆著於Cu合金芯材或導線表面而含有之方法之任一者，均可發揮上述本發明之效果。 作為上述成分之添加方法，最簡便的是預先添加至Cu合金芯材之起始材料之方法。例如，以高純度之銅及上述成分元素原料作為起始原料進行稱量後，將其於高真空下或者氮或氬等惰性氛圍下進行加熱而熔解，藉此製成添加有目標濃度範圍之上述成分之錠，製成包含目標濃度之上述成分元素之起始材料。因此，於較佳之一實施形態中，本發明之接合導線之Cu合金芯材以第1～第5合金元素群之元素相對於導線整體之濃度分別成為規定之濃度之方式含有上述元素。該濃度之合計之較佳之數值範圍如上所述。 亦可藉由於導線製造步驟之中途使上述成分覆著於導線表面而含有。於該情形時，可將該操作併入至導線製造步驟之任一處，且可重複進行複數次。亦可併入至複數個步驟中。可添加於Pd被覆前之Cu表面，可添加於Pd被覆後之Pd表面，可添加於Au被覆後之Au表面，亦可併入至各被覆步驟中。作為覆著方法，可自水溶液之塗佈⇒乾燥⇒熱處理、鍍覆法(濕式)、蒸鍍法(乾式)中選擇。 [實施例] 以下，一面表示實施例，一面對本發明之實施形態之接合導線具體地進行說明。 (樣品) 首先，對樣品之製作方法進行說明。成為芯材之原材料之Cu使用純度為99.99質量%以上且剩餘部分包含不可避免之雜質者。第1～第5合金元素群使用純度為99質量%以上且剩餘部分包含不可避免之雜質者。以導線或芯材之組成成為目標者之方式，調製作為對芯材之添加元素之第1～第5合金元素群。關於第1～第5合金元素群之添加，亦可單獨調製，但於單獨為高熔點之元素或添加量為極微量之情形時，亦可預先製作包含添加元素之Cu母合金，以成為目標添加量之方式進行調製。 芯材之Cu合金藉由如下方式製造：於加工為直徑f3～6 mm之圓柱形之碳坩鍋中裝填原料，使用高頻爐，於真空中或者N2 或Ar氣體等惰性氛圍中加熱至1090～1300℃而使之熔解後，進行爐內冷卻。對所獲得之f3～6 mm之合金，進行拉伸加工，加工至f0.9～1.2 mm後，使用模具連續地進行伸線加工等，藉此製作f300～600 μm之導線。於伸線時使用市售之潤滑液，伸線速度設為20～150 m/分鐘。為了去除導線表面之氧化膜，進行利用鹽酸之酸洗處理後，以覆蓋芯材之Cu合金之整個表面之方式形成1～15 μm之Pd被覆層。進而，一部分之導線係於Pd被覆層上形成0.05～1.5 μm之含有Au及Pd之合金表皮層。Pd被覆層、含有Au及Pd之合金表皮層之形成使用電解鍍覆法。鍍覆液使用市售之半導體用鍍覆液。其後，重複進行200～500℃之熱處理與伸線加工，藉此加工至直徑20 μm。加工後以最終斷裂伸長率成為約5～15%之方式一面使N2 或Ar氣體流通一面進行熱處理。熱處理方法係一面連續地掃掠導線一面進行，一面使N2 或Ar氣體流通一面進行。導線之進給速度設為20～200 m/分鐘，熱處理溫度為200～600℃，熱處理時間設為0.2～1.0秒。 Pd被覆層、含有Au及Pd之合金表皮層之濃度分析係自接合導線之表面朝向深度方向，一面利用Ar離子進行濺鍍一面使用歐傑電子能譜分析裝置進行分析。被覆層及合金表皮層之厚度根據所獲得之深度方向之濃度分佈(深度之單位為SiO2 換算)求出。將Pd之濃度為50原子%以上，且Au之濃度未達10原子%之區域設為Pd被覆層，將位於Pd被覆層之表面之Au濃度為10原子%以上之範圍之區域設為合金表皮層。將被覆層及合金表皮層之厚度及組成分別記載於表1～表6。Cu合金芯材中之Pd之濃度藉由使導線剖面露出，藉由掃描式電子顯微鏡所備置之電子探針微量分析器，對導線剖面之中心部(導線直徑之1/4之直徑之範圍)進行線分析、點分析等之方法測定。作為使導線剖面露出之方法，利用機械研磨、離子蝕刻法等。接合導線中之Pd含量藉由用上述分析之Cu合金芯材中之Pd含量分析值乘以「(每單位長度之導線之Cu合金芯材質量)/(每單位長度之導線之接合導線質量)」算出。接合導線中之Pd以外之第1～第5合金元素群之濃度係利用ICP發射光譜分析裝置、ICP質譜分析裝置對利用強酸使接合導線溶解而得之液體進行分析，作為接合導線整體所含之元素之濃度而檢測出。 (評價方法) 高溫高濕環境或高溫環境下之球接合部之接合可靠性係製作接合可靠性評價用之樣品，進行HAST及HTS評價，根據各個試驗中之球接合部之接合壽命進行判定。接合可靠性評價用之樣品係對在通常之金屬框上之Si基板使厚度0.8 μm之Al-1.0%Si-0.5%Cu之合金成膜而形成之電極，使用市售之焊線機進行球接合。球係一面使N2 +5%H2 氣體以流量0.4～0.6 L/min流通一面形成，其大小設為f33～34 μm之範圍。於接合導線之接合後，藉由不同之兩種硫含量之環氧樹脂進行密封而製作樣品。作為含低濃度硫之樹脂，使用硫含量為2質量ppm者，作為含高濃度硫之樹脂，使用硫含量為16質量ppm者。關於環氧樹脂中之硫含量評價，係將樹脂粉碎而於氮氣流中進行200℃、10小時過熱，利用過氧化氫水捕獲載體氮氣中所含之來自樹脂之釋氣，並藉由離子層析法進行硫含量之評價。 關於HAST評價，係使用不飽和型壓力鍋試驗機，將所製作之接合可靠性評價用之樣品暴露於溫度130℃、相對濕度85%之高溫高濕環境下，施加7 V之偏壓。球接合部之接合壽命設為每48小時實施球接合部之剪切試驗，剪切強度之值成為初期所獲得之剪切強度之1/2之時間。高溫高濕試驗後之剪切試驗係藉由酸處理去除樹脂，使球接合部露出後進行。 HAST評價之剪切試驗機使用DAGE公司製造之試驗機。剪切強度之值使用隨機選擇之球接合部之10個部位之測定值之平均值。於上述評價中，若接合壽命未達96小時，則判斷為於實際應用上存在問題，設為×記號，若為96小時以上且未達144小時，則視為可實際應用，但略有問題，設為△記號，若為144小時以上且未達288小時，則判斷為於實際應用上無問題，設為○記號，若為288小時以上且未達384小時，則判斷為優異，設為◎記號，若為384小時以上，則判斷為特別優異，設為◎◎記號，記於表1～表6之「HAST」之欄。 關於HTS評價，使用高溫恆溫器，將所製作之接合可靠性評價用之樣品暴露於溫度200℃之高溫環境下。球接合部之接合壽命設為每500小時實施球接合部之剪切試驗，剪切強度之值成為初期所獲得之剪切強度之1/2之時間。高溫試驗後之剪切試驗係藉由酸處理去除樹脂，使球接合部露出後進行。 HTS評價之剪切試驗機使用DAGE公司製造之試驗機。剪切強度之值使用隨機選擇之球接合部之10個部位之測定值之平均值。於上述評價中，若接合壽命未達250小時，則判斷為於實際應用上存在問題，設為×記號，若為250小時以上且未達500小時，則判斷為可實際應用，但有改善之要求，設為△記號，若為500小時以上且未達1000小時，則判斷為實際應用上無問題，設為○記號，若為1000小時以上且未達2000小時，則判斷為優異，設為◎記號，若為2000小時以上且3000小時以下，則判斷為特別優異，設為◎◎記號，記於表1～表6之「HTS」之欄。 球形成性(FAB形狀)之評價係採用進行接合之前之球進行觀察，判定球表面有無氣泡，原本真球之球有無變形。於產生上述任一者之情形時，判斷為不良。為了抑制熔融步驟中之氧化，球之形成係一面以流量0.5 L/min吹送N2 氣體一面進行。球之大小設為34 μm。針對一個條件，觀察50個球。觀察使用SEM。於球形成性之評價中，於產生5個以上不良之情形時，判斷為有問題，設為×記號，若不良為3～4個，則視為可實際應用，但略有問題，設為△記號，於不良為1～2個之情形時，判斷為無問題，設為○記號，於未產生不良之情形時，判斷為優異，設為◎記號，記於表1～表6之「FAB形狀」之欄。 導線接合部中之楔接合性之評價係對引線框架之引線部分進行1000根接合，根據接合部之剝離之產生頻率進行判定。引線框架使用實施有1～3 μm之Ag鍍覆之Fe-42原子%Ni合金引線框架。於本評價中，假定較通常更嚴酷之接合條件，將載台溫度設定為低於通常之設定溫度區域之150℃。於上述評價中，於產生11個以上不良之情形時，判斷為有問題，設為×記號，若不良為6～10個，則視為可實際應用，但略有問題，設為△記號，於不良為1～5個之情形時，判斷為無問題，設為○記號，於未產生不良之情形時，判斷為優異，設為◎記號，記於表1～表6之「楔接合性」之欄。 球接合部之壓扁形狀之評價係自正上方觀察進行接合之球接合部，根據其真圓性進行判定。接合對象使用於Si基板上使厚度1.0 μm之Al-0.5%Cu之合金成膜而成之電極。觀察係使用光學顯微鏡，針對一個條件，觀察200個部位。將自真圓之偏差較大之橢圓狀者、於變形具有各向異性者判斷為球接合部之壓扁形狀不良。於上述評價中，於產生6個以上不良之情形時，判斷為有問題，設為×記號，若不良為4～5個，則視為可實際應用，但略有問題，設為△記號，於1～3個之情形時，判斷為無問題，設為○記號，於全部獲得良好之真圓性之情形時，判斷為特別優異，設為◎記號，記於表1～表6之「壓扁形狀」之欄。 晶片損傷之評價藉由如下方式進行：對在Si基板上使厚度1.0 μm之Al-0.5%Cu之合金成膜而成之電極，進行200個部位之球接合，利用藥液使導線及Al電極溶解，露出Si基板，觀察於Si基板上是否出現損傷。若出現2個以上之損傷，則判斷為不良，設為×記號，若損傷為1個，則視為無問題，設為○記號，若未觀察到損傷，則視為良好，設為◎記號，記於表1～表6之「晶片損傷」欄。○與◎為合格。 [表1-1]
Figure 107100452-A0304-0001
 [表1-2]
Figure 107100452-A0304-0002
 [表1-3]
Figure 107100452-A0304-0003
 [表2-1]
Figure 107100452-A0304-0004
 [表2-2]
Figure 107100452-A0304-0005
 [表2-3]
Figure 107100452-A0304-0006
 [表3-1]
Figure 107100452-A0304-0007
 [表3-2]
Figure 107100452-A0304-0008
 [表3-3]
Figure 107100452-A0304-0009
 [表4-1]
Figure 107100452-A0304-0010
 [表4-2]
Figure 107100452-A0304-0011
 [表4-3]
Figure 107100452-A0304-0012
 [表5-1]
Figure 107100452-A0304-0013
 [表5-2]
Figure 107100452-A0304-0014
 [表5-3]
Figure 107100452-A0304-0015
 [表6-1]
Figure 107100452-A0304-0016
 [表6-2]
Figure 107100452-A0304-0017
 [表6-3]
Figure 107100452-A0304-0018
 於表1-1～表6-3表示結果。表1-1～表5-3之本發明例No.1～127為本發明例，表6-1～表6-3之比較例No.1～14為比較例。對超出本發明範圍之數值標附下劃線。 表1-1～表5-3之本發明例No.1～127係具有Cu合金芯材及形成於Cu合金芯材之表面之Pd被覆層之半導體裝置用接合導線，導線之成分組成處於本發明範圍內，於HAST結果、HST結果(含低濃度硫之樹脂、含高濃度硫之樹脂兩者)、FAB形狀、楔接合性、球接合部之壓扁形狀、晶片損傷之所有評價項目中，均可獲得良好之結果。 對表6-1～表6-3之比較例No.1～14進行說明。比較例No.1～5、12係第1+合金元素群之含量超出本發明範圍之下限，HAST、HTS(包含含低濃度硫之樹脂)均不良。 比較例No.6～8、11係第1+合金元素群之含量處於本發明範圍內，但第2合金元素群之含量超出本發明範圍之下限，比較例No.9係含有Zn並且第1合金元素群與Zn之合計含量超出本發明範圍，使用含高濃度硫之樹脂之HTS結果均不良。 比較例No.10、13～15係第1+合金元素群或第2合金元素群之任一者之含量超出本發明範圍之上限，晶片損傷不良。

Claims (8)

  1. 一種半導體裝置用接合導線，其係具有Cu合金芯材及形成於上述Cu合金芯材之表面之Pd被覆層者，其特徵在於：上述接合導線含有Ni、Rh、Ir中之1種以上(以下稱為「第1合金元素群」)、及0.05質量%以上之Pd之一者或兩者，於第1合金元素群之含量以接合導線中之含量進行評價，Pd含量基於Cu合金芯材中之Pd含量並換算為接合導線中之含量而進行評價時，於上述評價之含量中，第1合金元素群與Pd之總計之含量為0.03~2質量%，進而，上述接合導線含有總計0.002~3質量%之選自以下之元素群中之1種以上：(i)選自Li、Sb、Fe、Cr、Co、Sc、Y中之1種以上；(ii)0.011質量%以上之Ca；(iii)0.011質量%以上之Mg；以及(iv)Zn，其中接合導線中之上述第1合金元素群與Zn之總計之含量為2.1質量%以上。
  2. 如請求項1之半導體裝置用接合導線，其中上述Pd被覆層之厚度為0.015~0.150μm。
  3. 如請求項1之半導體裝置用接合導線，其於上述Pd被覆層上進而具有含有Au及Pd之合金表皮層。
  4. 如請求項3之半導體裝置用接合導線，其中上述含有Au及Pd之合金表皮層之厚度為0.050μm以下。
  5. 如請求項1之半導體裝置用接合導線，其中上述接合導線進而含有總計0.03~3質量%之Al、Ga、Ge、In中之1種以上。
  6. 如請求項1之半導體裝置用接合導線，其中上述接合導線進而含有總計0.1~1000質量ppm(Sn≦10質量ppm，Bi≦1質量ppm)之As、Te、Sn、Bi、Se中之1種以上。
  7. 如請求項1之半導體裝置用接合導線，其中上述接合導線進而含有總計0.1~200質量ppm之B、P、La中之1種以上。
  8. 如請求項1至7中任一項之半導體裝置用接合導線，其中於上述接合導線之最表面存在Cu。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11379637B2 (en) * 2019-04-12 2022-07-05 Iowa State University Research Foundation, Inc. Interstitial control during additive manufacturing
JPWO2021193378A1 (zh) * 2020-03-25 2021-09-30
US11676920B2 (en) * 2021-01-26 2023-06-13 United Microelectronics Corp. Semiconductor device and method for fabricating the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201230903A (en) * 2010-10-01 2012-07-16 Nippon Steel Materials Co Ltd Structure for joining multilayer copper bonding wire
CN105393352A (zh) * 2013-05-03 2016-03-09 贺利氏材料新加坡私人有限公司 铜接合导线以及其制造方法
TW201714186A (zh) * 2015-08-12 2017-04-16 Nippon Micrometal Corp 半導體裝置用接合線
TW201716592A (zh) * 2015-11-02 2017-05-16 Tanaka Electronics Ind 球焊用貴金屬被覆銅線
TW201723196A (zh) * 2015-12-15 2017-07-01 新日鐵住金高新材料股份有限公司 半導體裝置用接合線

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1061627B (it) 1975-03-20 1983-04-30 Ciba Geigy Coloranti reattivi per fibre e procedimento per la loro produzione ed applicazione
JPS5912005B2 (ja) 1977-08-17 1984-03-19 三菱電機株式会社 超電導コイル
JPS5912008B2 (ja) 1978-08-10 1984-03-19 頼 哲夫 積層印刷物の製造法及び全自動積層印刷機
JPS5937770B2 (ja) 1979-05-31 1984-09-12 三菱電機株式会社 温度検出装置
JPS5893230A (ja) 1981-11-30 1983-06-02 Toshiba Corp 超高真空処理装置
JPS5912005A (ja) 1982-07-09 1984-01-21 Kao Corp ケ−ス供給機
JPS5912008A (ja) 1982-07-12 1984-01-21 Nippon Steel Chem Co Ltd 野積貯炭方法
JPH0691598B2 (ja) 1982-08-27 1994-11-14 株式会社東芝 パターン認識方法及びそのための画像縮小装置
JPS5964534A (ja) 1982-10-06 1984-04-12 Noritake Co Ltd ガラス器物の成形方法
JPH0717007B2 (ja) 1983-06-21 1995-03-01 住友電気工業株式会社 熱収縮性チユ−ブの製造方法
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148543A (ja) 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JP2005167020A (ja) 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP4919364B2 (ja) 2010-08-11 2012-04-18 田中電子工業株式会社 ボールボンディング用金被覆銅ワイヤ
JP5697471B2 (ja) 2011-01-31 2015-04-08 日清オイリオグループ株式会社 加熱調理用油脂組成物およびその製造方法
EP2684970A4 (en) * 2011-03-07 2015-03-04 Jx Nippon Mining & Metals Corp COPPER OR COPPER ALLOY HAVING REDUCED RAY EMISSION AND CONNECTING WIRE OBTAINED FROM COPPER OR COPPER ALLOY AS RAW MATERIAL
JP5213146B1 (ja) 2012-10-03 2013-06-19 田中電子工業株式会社 半導体装置接続用銅ロジウム合金細線
CN111383935A (zh) 2014-04-21 2020-07-07 日铁化学材料株式会社 半导体装置用接合线
TWI550638B (zh) * 2015-02-26 2016-09-21 Nippon Micrometal Corp Connecting wires for semiconductor devices
JP5937770B1 (ja) 2015-05-26 2016-06-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
WO2016189752A1 (ja) * 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP5912008B1 (ja) 2015-06-15 2016-04-27 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP5985127B1 (ja) 2015-06-15 2016-09-06 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN106489199B (zh) 2015-06-15 2019-09-03 日铁新材料股份有限公司 半导体装置用接合线
WO2017013796A1 (ja) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201230903A (en) * 2010-10-01 2012-07-16 Nippon Steel Materials Co Ltd Structure for joining multilayer copper bonding wire
CN105393352A (zh) * 2013-05-03 2016-03-09 贺利氏材料新加坡私人有限公司 铜接合导线以及其制造方法
TW201714186A (zh) * 2015-08-12 2017-04-16 Nippon Micrometal Corp 半導體裝置用接合線
TW201716592A (zh) * 2015-11-02 2017-05-16 Tanaka Electronics Ind 球焊用貴金屬被覆銅線
TW201723196A (zh) * 2015-12-15 2017-07-01 新日鐵住金高新材料股份有限公司 半導體裝置用接合線

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