TWI360225B - Low-power multiple-channel fully depleted quantum - Google Patents

Low-power multiple-channel fully depleted quantum Download PDF

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Publication number
TWI360225B
TWI360225B TW093131508A TW93131508A TWI360225B TW I360225 B TWI360225 B TW I360225B TW 093131508 A TW093131508 A TW 093131508A TW 93131508 A TW93131508 A TW 93131508A TW I360225 B TWI360225 B TW I360225B
Authority
TW
Taiwan
Prior art keywords
gate electrode
forming
insulating layer
spacer
channel region
Prior art date
Application number
TW093131508A
Other languages
English (en)
Chinese (zh)
Other versions
TW200522356A (en
Inventor
James N Pan
John G Pellerin
Jon D Cheek
Original Assignee
Globalfoundries Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalfoundries Us Inc filed Critical Globalfoundries Us Inc
Publication of TW200522356A publication Critical patent/TW200522356A/zh
Application granted granted Critical
Publication of TWI360225B publication Critical patent/TWI360225B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW093131508A 2003-11-14 2004-10-18 Low-power multiple-channel fully depleted quantum TWI360225B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/706,948 US7074657B2 (en) 2003-11-14 2003-11-14 Low-power multiple-channel fully depleted quantum well CMOSFETs

Publications (2)

Publication Number Publication Date
TW200522356A TW200522356A (en) 2005-07-01
TWI360225B true TWI360225B (en) 2012-03-11

Family

ID=34573412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093131508A TWI360225B (en) 2003-11-14 2004-10-18 Low-power multiple-channel fully depleted quantum

Country Status (8)

Country Link
US (2) US7074657B2 (enExample)
EP (1) EP1695389B1 (enExample)
JP (1) JP2007511907A (enExample)
KR (1) KR20060108672A (enExample)
CN (1) CN100452437C (enExample)
DE (1) DE602004027158D1 (enExample)
TW (1) TWI360225B (enExample)
WO (1) WO2005053035A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224007B1 (en) * 2004-01-12 2007-05-29 Advanced Micro Devices, Inc. Multi-channel transistor with tunable hot carrier effect
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
US7544572B2 (en) * 2005-11-30 2009-06-09 Advanced Micro Devices, Inc. Multi-operational mode transistor with multiple-channel device structure
CN102074585B (zh) * 2010-10-22 2012-07-04 友达光电股份有限公司 薄膜晶体管与显示面板
JP6401977B2 (ja) * 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
CN103872139B (zh) * 2014-02-24 2016-09-07 北京京东方光电科技有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
US9653287B2 (en) * 2014-10-30 2017-05-16 Samsung Electronics Co., Ltd. S/D connection to individual channel layers in a nanosheet FET
US9590038B1 (en) 2015-10-23 2017-03-07 Samsung Electronics Co., Ltd. Semiconductor device having nanowire channel
US9899387B2 (en) * 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
KR102343470B1 (ko) 2016-01-28 2021-12-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
EP3608970B1 (en) * 2017-10-18 2025-12-10 IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) Layer, multi-level element, method for producing multi-level element, and method for driving same
KR102814839B1 (ko) * 2019-06-11 2025-05-30 삼성전자주식회사 반도체 소자
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法

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US5153688A (en) * 1990-04-21 1992-10-06 Canon Kabushiki Kaisha Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied
JPH04179271A (ja) * 1990-11-14 1992-06-25 Fujitsu Ltd 半導体装置及びその製造方法
TW476451U (en) * 1991-08-23 2002-02-11 Semiconductor Energy Lab Semiconductor device
JPH0575125A (ja) * 1991-09-12 1993-03-26 Toshiba Corp 薄膜トランジスタ
FR2703855B1 (fr) * 1993-04-05 1995-05-24 Valeo Electronique Montage à réponse linéarisée et symétrisée, oscillateur utilisant un tel montage et émetteur de télécommande utilisant un tel oscillateur.
JPH06310719A (ja) * 1993-04-19 1994-11-04 Sharp Corp Ｇｅ−ＳｉのＳＯＩ型ＭＯＳトランジスタ及びその製造方法
US5500545A (en) 1995-02-27 1996-03-19 United Microelectronics Corporation Double switching field effect transistor and method of manufacturing it
KR100279264B1 (ko) * 1998-12-26 2001-02-01 김영환 더블 게이트 구조를 갖는 에스·오·아이 트랜지스터 및 그의제조방법
US6373112B1 (en) * 1999-12-02 2002-04-16 Intel Corporation Polysilicon-germanium MOSFET gate electrodes
CN100345306C (zh) * 2000-05-31 2007-10-24 松下电器产业株式会社 金属－绝缘体－半导体场效应晶体管
US6432754B1 (en) * 2001-02-20 2002-08-13 International Business Machines Corporation Double SOI device with recess etch and epitaxy
JP2003092400A (ja) * 2001-07-13 2003-03-28 Seiko Epson Corp 半導体装置及びその製造方法
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
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US6921700B2 (en) * 2003-07-31 2005-07-26 Freescale Semiconductor, Inc. Method of forming a transistor having multiple channels

Also Published As

Publication number Publication date
US7074657B2 (en) 2006-07-11
WO2005053035A1 (en) 2005-06-09
TW200522356A (en) 2005-07-01
DE602004027158D1 (de) 2010-06-24
US7253484B2 (en) 2007-08-07
US20060278938A1 (en) 2006-12-14
EP1695389A1 (en) 2006-08-30
JP2007511907A (ja) 2007-05-10
KR20060108672A (ko) 2006-10-18
EP1695389B1 (en) 2010-05-12
CN1879224A (zh) 2006-12-13
US20050104140A1 (en) 2005-05-19
CN100452437C (zh) 2009-01-14

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