CN100452437C - 低能量多沟道全耗尽量子井互补式金氧半导体场效晶体管 - Google Patents

低能量多沟道全耗尽量子井互补式金氧半导体场效晶体管 Download PDF

Info

Publication number
CN100452437C
CN100452437C CNB2004800333292A CN200480033329A CN100452437C CN 100452437 C CN100452437 C CN 100452437C CN B2004800333292 A CNB2004800333292 A CN B2004800333292A CN 200480033329 A CN200480033329 A CN 200480033329A CN 100452437 C CN100452437 C CN 100452437C
Authority
CN
China
Prior art keywords
gate electrode
channel region
insulating barrier
sept
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2004800333292A
Other languages
English (en)
Chinese (zh)
Other versions
CN1879224A (zh
Inventor
J·N·帕恩
J·G·佩尔兰
J·D·奇克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries US Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1879224A publication Critical patent/CN1879224A/zh
Application granted granted Critical
Publication of CN100452437C publication Critical patent/CN100452437C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CNB2004800333292A 2003-11-14 2004-10-08 低能量多沟道全耗尽量子井互补式金氧半导体场效晶体管 Expired - Lifetime CN100452437C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/706,948 US7074657B2 (en) 2003-11-14 2003-11-14 Low-power multiple-channel fully depleted quantum well CMOSFETs
US10/706,948 2003-11-14

Publications (2)

Publication Number Publication Date
CN1879224A CN1879224A (zh) 2006-12-13
CN100452437C true CN100452437C (zh) 2009-01-14

Family

ID=34573412

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800333292A Expired - Lifetime CN100452437C (zh) 2003-11-14 2004-10-08 低能量多沟道全耗尽量子井互补式金氧半导体场效晶体管

Country Status (8)

Country Link
US (2) US7074657B2 (enExample)
EP (1) EP1695389B1 (enExample)
JP (1) JP2007511907A (enExample)
KR (1) KR20060108672A (enExample)
CN (1) CN100452437C (enExample)
DE (1) DE602004027158D1 (enExample)
TW (1) TWI360225B (enExample)
WO (1) WO2005053035A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7224007B1 (en) * 2004-01-12 2007-05-29 Advanced Micro Devices, Inc. Multi-channel transistor with tunable hot carrier effect
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
US7544572B2 (en) * 2005-11-30 2009-06-09 Advanced Micro Devices, Inc. Multi-operational mode transistor with multiple-channel device structure
CN102074585B (zh) * 2010-10-22 2012-07-04 友达光电股份有限公司 薄膜晶体管与显示面板
JP6401977B2 (ja) * 2013-09-06 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
CN103872139B (zh) * 2014-02-24 2016-09-07 北京京东方光电科技有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
US9653287B2 (en) * 2014-10-30 2017-05-16 Samsung Electronics Co., Ltd. S/D connection to individual channel layers in a nanosheet FET
US9590038B1 (en) 2015-10-23 2017-03-07 Samsung Electronics Co., Ltd. Semiconductor device having nanowire channel
US9899387B2 (en) * 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
KR102343470B1 (ko) 2016-01-28 2021-12-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
EP3651203A1 (en) * 2017-10-18 2020-05-13 IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element
KR102814839B1 (ko) * 2019-06-11 2025-05-30 삼성전자주식회사 반도체 소자
CN112151616B (zh) * 2020-08-20 2022-12-16 中国科学院微电子研究所 一种堆叠mos器件及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153688A (en) * 1990-04-21 1992-10-06 Canon Kabushiki Kaisha Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied
CN1070052A (zh) * 1991-08-23 1993-03-17 株式会社半导体能源研究所 半导体器件及其制造方法
US5500545A (en) * 1995-02-27 1996-03-19 United Microelectronics Corporation Double switching field effect transistor and method of manufacturing it
US20020115240A1 (en) * 2001-02-20 2002-08-22 International Business Machines Corporation Double soi device with recess etch and epitaxy

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179271A (ja) * 1990-11-14 1992-06-25 Fujitsu Ltd 半導体装置及びその製造方法
JPH0575125A (ja) * 1991-09-12 1993-03-26 Toshiba Corp 薄膜トランジスタ
FR2703855B1 (fr) * 1993-04-05 1995-05-24 Valeo Electronique Montage à réponse linéarisée et symétrisée, oscillateur utilisant un tel montage et émetteur de télécommande utilisant un tel oscillateur.
JPH06310719A (ja) * 1993-04-19 1994-11-04 Sharp Corp Ｇｅ−ＳｉのＳＯＩ型ＭＯＳトランジスタ及びその製造方法
KR100279264B1 (ko) * 1998-12-26 2001-02-01 김영환 더블 게이트 구조를 갖는 에스·오·아이 트랜지스터 및 그의제조방법
US6373112B1 (en) * 1999-12-02 2002-04-16 Intel Corporation Polysilicon-germanium MOSFET gate electrodes
US6617653B1 (en) * 2000-05-31 2003-09-09 Matsushita Electric Industrial Co., Ltd. Misfet
JP2003092400A (ja) * 2001-07-13 2003-03-28 Seiko Epson Corp 半導体装置及びその製造方法
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
FR2853454B1 (fr) * 2003-04-03 2005-07-15 St Microelectronics Sa Transistor mos haute densite
US6919250B2 (en) * 2003-05-21 2005-07-19 Advanced Micro Devices, Inc. Multiple-gate MOS device and method for making the same
US6921700B2 (en) * 2003-07-31 2005-07-26 Freescale Semiconductor, Inc. Method of forming a transistor having multiple channels

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153688A (en) * 1990-04-21 1992-10-06 Canon Kabushiki Kaisha Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied
CN1070052A (zh) * 1991-08-23 1993-03-17 株式会社半导体能源研究所 半导体器件及其制造方法
US5500545A (en) * 1995-02-27 1996-03-19 United Microelectronics Corporation Double switching field effect transistor and method of manufacturing it
US20020115240A1 (en) * 2001-02-20 2002-08-22 International Business Machines Corporation Double soi device with recess etch and epitaxy

Also Published As

Publication number Publication date
US7074657B2 (en) 2006-07-11
US20050104140A1 (en) 2005-05-19
JP2007511907A (ja) 2007-05-10
TW200522356A (en) 2005-07-01
WO2005053035A1 (en) 2005-06-09
DE602004027158D1 (de) 2010-06-24
EP1695389B1 (en) 2010-05-12
TWI360225B (en) 2012-03-11
US7253484B2 (en) 2007-08-07
KR20060108672A (ko) 2006-10-18
CN1879224A (zh) 2006-12-13
EP1695389A1 (en) 2006-08-30
US20060278938A1 (en) 2006-12-14

Similar Documents

Publication Publication Date Title
US11424244B2 (en) Integrated circuit having a vertical power MOS transistor
US11114563B2 (en) Semiconductor devices with low junction capacitances and methods of fabrication thereof
CN101997032B (zh) 半导体器件及半导体器件制造方法
CN1855544B (zh) 具有屏蔽电极的半导体器件及其方法
CN100452437C (zh) 低能量多沟道全耗尽量子井互补式金氧半导体场效晶体管
TW200307331A (en) Metal insulator semiconductor type semiconductor device and its manufacturing method
JP2008270575A (ja) 半導体装置およびその製造方法
CN114695549A (zh) 高压半导体装置以及其制作方法
TWI751431B (zh) 具有低閃爍雜訊的半導體裝置及其形成方法
KR100750432B1 (ko) 전계 효과 트랜지스터 구조체, 트랜지스터 장치 및트랜지스터 제조 방법
US20250056871A1 (en) Methods of forming bottom dielectric isolation layers
CN103594470B (zh) 具有垂直功率mos晶体管的集成电路
CN102044433A (zh) 一种混合源漏场效应晶体管及其制备方法
CN113471075A (zh) 半导体器件及其形成方法
JP3779556B2 (ja) 電界効果トランジスタ
US6919250B2 (en) Multiple-gate MOS device and method for making the same
JP4845170B2 (ja) 超シャロー金属酸化物表面チャネルｍｏｓトランジスタ
JP2005175011A (ja) 電界効果型トランジスタ及びその製造方法
CN116266536A (zh) 晶体管的制备方法和晶体管

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: GLOBALFOUNDRIES INC.

Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC.

Effective date: 20100730

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA STATE, USA TO: CAYMAN ISLANDS GRAND CAYMAN ISLAND

TR01 Transfer of patent right

Effective date of registration: 20100730

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES Inc.

Address before: California, USA

Patentee before: ADVANCED MICRO DEVICES, Inc.

TR01 Transfer of patent right

Effective date of registration: 20210224

Address after: California, USA

Patentee after: Lattice chip (USA) integrated circuit technology Co.,Ltd.

Address before: Greater Cayman Islands, British Cayman Islands

Patentee before: GLOBALFOUNDRIES Inc.

TR01 Transfer of patent right
CX01 Expiry of patent term

Granted publication date: 20090114

CX01 Expiry of patent term