TWI351708B - - Google Patents

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Publication number
TWI351708B
TWI351708B TW093125524A TW93125524A TWI351708B TW I351708 B TWI351708 B TW I351708B TW 093125524 A TW093125524 A TW 093125524A TW 93125524 A TW93125524 A TW 93125524A TW I351708 B TWI351708 B TW I351708B
Authority
TW
Taiwan
Prior art keywords
impurity
gas
plasma
substrate
forming
Prior art date
Application number
TW093125524A
Other languages
English (en)
Chinese (zh)
Other versions
TW200514117A (en
Inventor
Yuichiro Sasaki
Katsumi Okashita
Bunji Mizuno
Hiroyuki Ito
Cheng-Guo Jin
Hideki Tamura
Ichiro Nakayama
Tomohiro Okumura
Satoshi Maeshima
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of TW200514117A publication Critical patent/TW200514117A/zh
Application granted granted Critical
Publication of TWI351708B publication Critical patent/TWI351708B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW093125524A 2003-08-25 2004-08-26 Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment TW200514117A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003299596 2003-08-25

Publications (2)

Publication Number Publication Date
TW200514117A TW200514117A (en) 2005-04-16
TWI351708B true TWI351708B (enExample) 2011-11-01

Family

ID=34213768

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125524A TW200514117A (en) 2003-08-25 2004-08-26 Forming method of impurity-inducted layer, the cleaning method of the treated subject, and the manufacture method of the impurity-inducted device as well as equipment

Country Status (5)

Country Link
US (1) US7759254B2 (enExample)
JP (1) JP4619951B2 (enExample)
CN (1) CN100437912C (enExample)
TW (1) TW200514117A (enExample)
WO (1) WO2005020306A1 (enExample)

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TWI689467B (zh) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
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JP6036732B2 (ja) * 2014-03-18 2016-11-30 信越半導体株式会社 貼り合わせウェーハの製造方法
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Also Published As

Publication number Publication date
CN100437912C (zh) 2008-11-26
US20060264051A1 (en) 2006-11-23
JPWO2005020306A1 (ja) 2006-10-19
CN1842896A (zh) 2006-10-04
WO2005020306A1 (ja) 2005-03-03
US7759254B2 (en) 2010-07-20
JP4619951B2 (ja) 2011-01-26
TW200514117A (en) 2005-04-16

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