US3625749A
(en)
|
1966-04-06 |
1971-12-07 |
Matsushita Electronics Corp |
Method for deposition of silicon dioxide films
|
DE1789021C3
(en)
|
1967-09-25 |
1975-04-10 |
Hitachi, Ltd., Tokio |
Zener diode and process for its manufacture
|
JPS4820106B1
(en)
|
1968-03-08 |
1973-06-19 |
|
|
US3658586A
(en)
|
1969-04-11 |
1972-04-25 |
Rca Corp |
Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
|
US3725749A
(en)
|
1971-06-30 |
1973-04-03 |
Monsanto Co |
GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES
|
JPS5183473A
(en)
|
1975-01-20 |
1976-07-22 |
Hitachi Ltd |
Fujunbutsuno doopinguhoho
|
US4128733A
(en)
|
1977-12-27 |
1978-12-05 |
Hughes Aircraft Company |
Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fabricating same
|
JPS588071A
(en)
|
1981-07-08 |
1983-01-18 |
Nippon Iyakuhin Kogyo Kk |
Preparation of 2-benzothiazolinone-3-acetic acid amide derivative or its pharmacologically active salt
|
US4459427A
(en)
|
1981-10-31 |
1984-07-10 |
The British Petroleum Company P.L.C. |
Process for the conversion of an alkane to a mixture of an alcohol and a ketone
|
JPS60221566A
(en)
|
1984-04-18 |
1985-11-06 |
Agency Of Ind Science & Technol |
Thin film forming device
|
US4600801A
(en)
|
1984-11-02 |
1986-07-15 |
Sovonics Solar Systems |
Fluorinated, p-doped microcrystalline silicon semiconductor alloy material
|
US4722978A
(en)
|
1985-08-30 |
1988-02-02 |
The B. F. Goodrich Company |
Allyl terminated macromolecular monomers of polyethers
|
US4680358A
(en)
|
1985-11-08 |
1987-07-14 |
The B F Goodrich Company |
Styryl terminated macromolecular monomers of polyethers
|
JPS6315228A
(en)
|
1986-07-08 |
1988-01-22 |
Asahi Glass Co Ltd |
Electrochromic element
|
JPH0772167B2
(en)
|
1986-09-04 |
1995-08-02 |
サントリー株式会社 |
Process for producing 4-amino-3-hydroxybutyric acid derivative
|
US4851255A
(en)
|
1986-12-29 |
1989-07-25 |
Air Products And Chemicals, Inc. |
Ion implant using tetrafluoroborate
|
GB8711373D0
(en)
|
1987-05-14 |
1987-06-17 |
Secr Defence |
Electroluminescent silicon device
|
JPS6483147A
(en)
|
1987-09-25 |
1989-03-28 |
Olympus Optical Co |
Manufacture of chemical sensitivity field effect transistor
|
JPH01225117A
(en)
|
1988-03-04 |
1989-09-08 |
Nippon Telegr & Teleph Corp <Ntt> |
Method and device for manufacturing semiconductor device
|
JP2699549B2
(en)
|
1988-06-03 |
1998-01-19 |
日産化学工業株式会社 |
Method for producing 4-benzoyl-5-hydroxypyrazoles
|
EP0405855A3
(en)
|
1989-06-30 |
1991-10-16 |
Hitachi, Ltd. |
Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus
|
JPH04112441A
(en)
|
1990-08-31 |
1992-04-14 |
Toshiba Corp |
Ion implantation device and its cleaning method
|
JPH05254808A
(en)
|
1992-03-10 |
1993-10-05 |
Semiconductor Energy Lab Co Ltd |
Preparation of boron nitride
|
JPH0680681A
(en)
|
1992-07-15 |
1994-03-22 |
Nippon Kayaku Co Ltd |
Phosphonium compound and electrophotographic toner using the same
|
US5347460A
(en)
|
1992-08-25 |
1994-09-13 |
International Business Machines Corporation |
Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication
|
DE69417521T2
(en)
|
1993-06-23 |
1999-09-16 |
Toray Industries, Inc. |
ELECTRODE OF A CELL, SECONDARY CELL WITH THIS ELECTRODE AND METHOD FOR PRODUCING THIS ELECTRODE
|
JPH0790201A
(en)
|
1993-09-22 |
1995-04-04 |
Hokko Chem Ind Co Ltd |
Underwater antifouling coating compound
|
US5360986A
(en)
|
1993-10-05 |
1994-11-01 |
Motorola, Inc. |
Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method
|
US5436180A
(en)
|
1994-02-28 |
1995-07-25 |
Motorola, Inc. |
Method for reducing base resistance in epitaxial-based bipolar transistor
|
US5977552A
(en)
|
1995-11-24 |
1999-11-02 |
Applied Materials, Inc. |
Boron ion sources for ion implantation apparatus
|
US5993766A
(en)
|
1996-05-20 |
1999-11-30 |
Advanced Technology Materials, Inc. |
Gas source and dispensing system
|
GB2317265A
(en)
|
1996-09-13 |
1998-03-18 |
Aea Technology Plc |
Radio frequency plasma generator
|
JPH10251592A
(en)
|
1997-03-07 |
1998-09-22 |
Kansai Paint Co Ltd |
Coating composition and application thereof
|
US5948322A
(en)
|
1997-04-10 |
1999-09-07 |
Advanced Technology Materials, Inc. |
Source reagents for MOCVD formation of non-linear optically active metal borate films and optically active metal borate films formed therefrom
|
US6001172A
(en)
|
1997-08-05 |
1999-12-14 |
Advanced Technology Materials, Inc. |
Apparatus and method for the in-situ generation of dopants
|
US6018065A
(en)
|
1997-11-10 |
2000-01-25 |
Advanced Technology Materials, Inc. |
Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
|
US6096467A
(en)
|
1997-11-19 |
2000-08-01 |
Mita Industrial Co., Ltd. |
Positive charging color toner
|
US6135128A
(en)
|
1998-03-27 |
2000-10-24 |
Eaton Corporation |
Method for in-process cleaning of an ion source
|
US6614082B1
(en)
|
1999-01-29 |
2003-09-02 |
Micron Technology, Inc. |
Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
|
US6376664B1
(en)
|
1999-03-17 |
2002-04-23 |
The Ohio State University |
Cyclic bis-benzimidazole ligands and metal complexes thereof
|
US6346452B1
(en)
|
1999-05-03 |
2002-02-12 |
National Semiconductor Corporation |
Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers
|
US6221169B1
(en)
|
1999-05-10 |
2001-04-24 |
Axcelis Technologies, Inc. |
System and method for cleaning contaminated surfaces in an ion implanter
|
US6475276B1
(en)
|
1999-10-15 |
2002-11-05 |
Asm Microchemistry Oy |
Production of elemental thin films using a boron-containing reducing agent
|
JP4820038B2
(en)
|
1999-12-13 |
2011-11-24 |
セメクイップ, インコーポレイテッド |
Ion implanted ion source, system, and method
|
DE10011274A1
(en)
|
2000-03-08 |
2001-09-13 |
Wolff Walsrode Ag |
Plasma-treated sheet materials
|
US6420304B1
(en)
|
2000-04-20 |
2002-07-16 |
China Petrochemical Development Corporation |
Polymer-supported carbonylation catalyst and its use
|
WO2002000735A1
(en)
|
2000-06-19 |
2002-01-03 |
Kimberly-Clark Worldwide, Inc. |
Novel photoinitiators and applications therefor
|
WO2002005315A2
(en)
|
2000-07-10 |
2002-01-17 |
Epion Corporation |
System and method for improving thin films by gas cluster ion be am processing
|
KR20000072651A
(en)
|
2000-08-08 |
2000-12-05 |
이관호 |
Novel plant species ssamchoo and breeding method thereof
|
US6893907B2
(en)
|
2002-06-05 |
2005-05-17 |
Applied Materials, Inc. |
Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
|
US7223676B2
(en)
|
2002-06-05 |
2007-05-29 |
Applied Materials, Inc. |
Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
|
US7094670B2
(en)
|
2000-08-11 |
2006-08-22 |
Applied Materials, Inc. |
Plasma immersion ion implantation process
|
US6887337B2
(en)
|
2000-09-19 |
2005-05-03 |
Xactix, Inc. |
Apparatus for etching semiconductor samples and a source for providing a gas by sublimation thereto
|
US20020058385A1
(en)
|
2000-10-26 |
2002-05-16 |
Taiji Noda |
Semiconductor device and method for manufacturing the same
|
CN1461493A
(en)
|
2000-12-18 |
2003-12-10 |
住友精密工业株式会社 |
Cleaning method and etching method
|
JP2002313776A
(en)
|
2001-04-19 |
2002-10-25 |
Toshiba Corp |
Dry etching method and dry etching device
|
KR100412129B1
(en)
|
2001-04-30 |
2003-12-31 |
주식회사 하이닉스반도체 |
Method for forming junction in semiconductor device
|
JP3824058B2
(en)
|
2001-05-23 |
2006-09-20 |
独立行政法人産業技術総合研究所 |
Carborane super cluster and manufacturing method thereof
|
US6716770B2
(en)
|
2001-05-23 |
2004-04-06 |
Air Products And Chemicals, Inc. |
Low dielectric constant material and method of processing by CVD
|
US6685803B2
(en)
|
2001-06-22 |
2004-02-03 |
Applied Materials, Inc. |
Plasma treatment of processing gases
|
US6835414B2
(en)
|
2001-07-27 |
2004-12-28 |
Unaxis Balzers Aktiengesellschaft |
Method for producing coated substrates
|
US6718126B2
(en)
|
2001-09-14 |
2004-04-06 |
Applied Materials, Inc. |
Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
|
WO2003057667A2
(en)
|
2001-12-31 |
2003-07-17 |
The Ohio State University Research Foundation |
Strapped and modified bis (benzimidazole) diamides for asymmetric catalysts and other applications
|
US6518184B1
(en)
|
2002-01-18 |
2003-02-11 |
Intel Corporation |
Enhancement of an interconnect
|
GB2417365B
(en)
|
2002-03-28 |
2006-05-17 |
Applied Materials Inc |
Monatomic boron ion source and method
|
US7138768B2
(en)
|
2002-05-23 |
2006-11-21 |
Varian Semiconductor Equipment Associates, Inc. |
Indirectly heated cathode ion source
|
KR100797138B1
(en)
|
2002-06-26 |
2008-01-22 |
세미이큅, 인코포레이티드 |
Complementary metal oxide semiconductor device, and method for forming a metal oxide semiconductor device and a complementary metal oxide semiconductor device
|
US20040002202A1
(en)
|
2002-06-26 |
2004-01-01 |
Horsky Thomas Neil |
Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
|
KR100464935B1
(en)
|
2002-09-17 |
2005-01-05 |
주식회사 하이닉스반도체 |
Method of fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by Boron-fluoride compound doping
|
US6841141B2
(en)
|
2002-09-26 |
2005-01-11 |
Advanced Technology Materials, Inc. |
System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
|
US7080545B2
(en)
|
2002-10-17 |
2006-07-25 |
Advanced Technology Materials, Inc. |
Apparatus and process for sensing fluoro species in semiconductor processing systems
|
US6908846B2
(en)
|
2002-10-24 |
2005-06-21 |
Lam Research Corporation |
Method and apparatus for detecting endpoint during plasma etching of thin films
|
US20040110351A1
(en)
|
2002-12-05 |
2004-06-10 |
International Business Machines Corporation |
Method and structure for reduction of junction capacitance in a semiconductor device and formation of a uniformly lowered threshold voltage device
|
JP2006510196A
(en)
|
2002-12-12 |
2006-03-23 |
エピオン コーポレーション |
Recrystallization of semiconductor surface film by high energy cluster irradiation and semiconductor doping method
|
US6780896B2
(en)
|
2002-12-20 |
2004-08-24 |
Kimberly-Clark Worldwide, Inc. |
Stabilized photoinitiators and applications thereof
|
US6936505B2
(en)
|
2003-05-20 |
2005-08-30 |
Intel Corporation |
Method of forming a shallow junction
|
CN100437912C
(en)
|
2003-08-25 |
2008-11-26 |
松下电器产业株式会社 |
Method for forming impurity-introduced layer, method for cleaning object to be processed, apparatus for introducing impurity and method for producing device
|
JP2005093518A
(en)
|
2003-09-12 |
2005-04-07 |
Matsushita Electric Ind Co Ltd |
Control method and apparatus of dopant introduction
|
US7780747B2
(en)
|
2003-10-14 |
2010-08-24 |
Advanced Technology Materials, Inc. |
Apparatus and method for hydrogen generation from gaseous hydride
|
JP4646920B2
(en)
|
2003-12-12 |
2011-03-09 |
セメクイップ, インコーポレイテッド |
Method and apparatus for extending equipment operational time in ion implantation
|
US20050230350A1
(en)
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
US7015108B2
(en)
|
2004-02-26 |
2006-03-21 |
Intel Corporation |
Implanting carbon to form P-type drain extensions
|
GB2412488B
(en)
*
|
2004-03-26 |
2007-03-28 |
Applied Materials Inc |
Ion sources
|
US7819981B2
(en)
|
2004-10-26 |
2010-10-26 |
Advanced Technology Materials, Inc. |
Methods for cleaning ion implanter components
|
US20060115591A1
(en)
|
2004-11-29 |
2006-06-01 |
Olander W K |
Pentaborane(9) storage and delivery
|
US20060115590A1
(en)
|
2004-11-29 |
2006-06-01 |
Tokyo Electron Limited; International Business Machines Corporation |
Method and system for performing in-situ cleaning of a deposition system
|
EP1787321A4
(en)
|
2004-12-03 |
2008-12-03 |
Tel Epion Inc |
Formation of ultra-shallow junctions by gas-cluster ion irridation
|
TWI387667B
(en)
|
2004-12-21 |
2013-03-01 |
Applied Materials Inc |
An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
|
EP1831430A2
(en)
|
2004-12-21 |
2007-09-12 |
Applied Materials, Inc. |
An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
|
WO2006095086A2
(en)
|
2005-03-07 |
2006-09-14 |
Laurence Faure |
Traceability of cellular cycle anomalies targeting oncology and neurodegeneration
|
JP2008543563A
(en)
|
2005-06-22 |
2008-12-04 |
アドバンスド テクノロジー マテリアルズ,インコーポレイテッド |
Integrated gas mixing device and process
|
US20100112795A1
(en)
|
2005-08-30 |
2010-05-06 |
Advanced Technology Materials, Inc. |
Method of forming ultra-shallow junctions for semiconductor devices
|
WO2008121620A1
(en)
|
2007-03-30 |
2008-10-09 |
Advanced Technology Materials, Inc. |
Method of forming ultra-shallow junctions for semiconductor devices
|
SG2014011944A
(en)
|
2005-08-30 |
2014-08-28 |
Advanced Tech Materials |
Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
|
US7446326B2
(en)
|
2005-08-31 |
2008-11-04 |
Varian Semiconductor Equipment Associates, Inc. |
Technique for improving ion implanter productivity
|
KR101455404B1
(en)
|
2005-12-09 |
2014-10-27 |
세미이큅, 인코포레이티드 |
System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
|
US20070178679A1
(en)
|
2006-01-28 |
2007-08-02 |
Varian Semiconductor Equipment Associates, Inc. |
Methods of implanting ions and ion sources used for same
|
US20070178678A1
(en)
|
2006-01-28 |
2007-08-02 |
Varian Semiconductor Equipment Associates, Inc. |
Methods of implanting ions and ion sources used for same
|
EP1984096B1
(en)
|
2006-01-30 |
2014-04-30 |
Advanced Technology Materials, Inc. |
A method of increasing the loading capacity of a porous carbon adsorbent
|
US7572482B2
(en)
|
2006-04-14 |
2009-08-11 |
Bae Systems Information And Electronic Systems Integration Inc. |
Photo-patterned carbon electronics
|
US8603252B2
(en)
|
2006-04-26 |
2013-12-10 |
Advanced Technology Materials, Inc. |
Cleaning of semiconductor processing systems
|
WO2007134183A2
(en)
|
2006-05-13 |
2007-11-22 |
Advanced Technology Materials, Inc. |
Chemical reagent delivery system utilizing ionic liquid storage medium
|
WO2007146888A2
(en)
|
2006-06-12 |
2007-12-21 |
Semequip, Inc. |
Vapor delivery to devices under vacuum
|
US7553758B2
(en)
|
2006-09-18 |
2009-06-30 |
Samsung Electronics Co., Ltd. |
Method of fabricating interconnections of microelectronic device using dual damascene process
|
KR20080033561A
(en)
|
2006-10-12 |
2008-04-17 |
삼성전자주식회사 |
Method of doping a substrate
|
US7642150B2
(en)
|
2006-11-08 |
2010-01-05 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for forming shallow junctions
|
US8013312B2
(en)
|
2006-11-22 |
2011-09-06 |
Semequip, Inc. |
Vapor delivery system useful with ion sources and vaporizer for use in such system
|
US7919402B2
(en)
*
|
2006-12-06 |
2011-04-05 |
Semequip, Inc. |
Cluster ion implantation for defect engineering
|
US20080305598A1
(en)
|
2007-06-07 |
2008-12-11 |
Horsky Thomas N |
Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
|
US7794798B2
(en)
|
2007-09-29 |
2010-09-14 |
Tel Epion Inc. |
Method for depositing films using gas cluster ion beam processing
|
TWI494975B
(en)
*
|
2008-02-11 |
2015-08-01 |
Advanced Tech Materials |
Ion source cleaning in semiconductor processing systems
|
DE102008011929A1
(en)
*
|
2008-02-29 |
2009-09-10 |
Advanced Micro Devices, Inc., Sunnyvale |
Method for implanting an ion species in a microstructure by simultaneously cleaning the implantation system
|
KR20100029539A
(en)
|
2008-09-08 |
2010-03-17 |
연세대학교 산학협력단 |
Carbon doping method using the plasma
|
JP2010189694A
(en)
*
|
2009-02-17 |
2010-09-02 |
Miyako Roller Industry Co |
Aluminum roll and carbon roll having dlc film formed thereon at atmospheric temperature
|
US7947582B2
(en)
|
2009-02-27 |
2011-05-24 |
Tel Epion Inc. |
Material infusion in a trap layer structure using gas cluster ion beam processing
|
US20110021011A1
(en)
|
2009-07-23 |
2011-01-27 |
Advanced Technology Materials, Inc. |
Carbon materials for carbon implantation
|
US9627180B2
(en)
|
2009-10-01 |
2017-04-18 |
Praxair Technology, Inc. |
Method for ion source component cleaning
|
US8237136B2
(en)
|
2009-10-08 |
2012-08-07 |
Tel Epion Inc. |
Method and system for tilting a substrate during gas cluster ion beam processing
|
US8598022B2
(en)
|
2009-10-27 |
2013-12-03 |
Advanced Technology Materials, Inc. |
Isotopically-enriched boron-containing compounds, and methods of making and using same
|
EP2494581B1
(en)
|
2009-10-27 |
2016-05-18 |
Entegris Inc. |
Ion implantation system and method
|
US8187971B2
(en)
|
2009-11-16 |
2012-05-29 |
Tel Epion Inc. |
Method to alter silicide properties using GCIB treatment
|
US20110143527A1
(en)
|
2009-12-14 |
2011-06-16 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for generating uniform ion beam
|
JP5714831B2
(en)
|
2010-03-18 |
2015-05-07 |
ルネサスエレクトロニクス株式会社 |
Manufacturing method of semiconductor device
|
JP5826524B2
(en)
|
2010-07-16 |
2015-12-02 |
住友重機械工業株式会社 |
Plasma doping apparatus and plasma doping method
|
JP5400007B2
(en)
*
|
2010-09-14 |
2014-01-29 |
株式会社都ローラー工業 |
Roll manufacturing method, film forming roll, film forming apparatus
|
US9984855B2
(en)
|
2010-11-17 |
2018-05-29 |
Axcelis Technologies, Inc. |
Implementation of co-gases for germanium and boron ion implants
|
CN108565198A
(en)
|
2012-02-14 |
2018-09-21 |
恩特格里斯公司 |
Carbon dopant gas for improving injected beam and source performance life and coflow
|