JPS4820106B1 - - Google Patents
Info
- Publication number
- JPS4820106B1 JPS4820106B1 JP43015116A JP1511668A JPS4820106B1 JP S4820106 B1 JPS4820106 B1 JP S4820106B1 JP 43015116 A JP43015116 A JP 43015116A JP 1511668 A JP1511668 A JP 1511668A JP S4820106 B1 JPS4820106 B1 JP S4820106B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43015116A JPS4820106B1 (en) | 1968-03-08 | 1968-03-08 | |
GB1251251D GB1251251A (en) | 1968-03-08 | 1969-03-06 | |
DE1911715A DE1911715B2 (en) | 1968-03-08 | 1969-03-07 | Method of manufacturing a compound semiconductor |
US805626A US3615203A (en) | 1968-03-08 | 1969-03-10 | Method for the preparation of groups iii{14 v single crystal semiconductors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43015116A JPS4820106B1 (en) | 1968-03-08 | 1968-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4820106B1 true JPS4820106B1 (en) | 1973-06-19 |
Family
ID=11879844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP43015116A Pending JPS4820106B1 (en) | 1968-03-08 | 1968-03-08 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3615203A (en) |
JP (1) | JPS4820106B1 (en) |
DE (1) | DE1911715B2 (en) |
GB (1) | GB1251251A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51113903U (en) * | 1975-03-12 | 1976-09-16 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4040894A (en) * | 1967-06-13 | 1977-08-09 | Huguette Fumeron Rodot | Process of preparing crystals of compounds and alloys |
US3899572A (en) * | 1969-12-13 | 1975-08-12 | Sony Corp | Process for producing phosphides |
US3947548A (en) * | 1970-10-01 | 1976-03-30 | Semiconductor Research Foundation | Process of growing single crystals of gallium phosphide |
JPS5148152B2 (en) * | 1972-05-11 | 1976-12-18 | ||
US4190486A (en) * | 1973-10-04 | 1980-02-26 | Hughes Aircraft Company | Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment |
US4181515A (en) * | 1974-09-24 | 1980-01-01 | The Post Office | Method of making dielectric optical waveguides |
DE2510612C2 (en) * | 1975-03-11 | 1985-01-31 | Siemens AG, 1000 Berlin und 8000 München | Process for the production of compact, single-phase gallium phosphide of stoichiometric composition |
US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
US4169727A (en) * | 1978-05-01 | 1979-10-02 | Morgan Semiconductor, Inc. | Alloy of silicon and gallium arsenide |
US4521272A (en) * | 1981-01-05 | 1985-06-04 | At&T Technologies, Inc. | Method for forming and growing a single crystal of a semiconductor compound |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
TWI402098B (en) * | 2005-06-22 | 2013-07-21 | Advanced Tech Materials | Apparatus and process for integrated gas blending |
TWI450994B (en) | 2005-08-30 | 2014-09-01 | Advanced Tech Materials | Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation |
SG188150A1 (en) | 2008-02-11 | 2013-03-28 | Advanced Tech Materials | Ion source cleaning in semiconductor processing systems |
US20110021011A1 (en) * | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
TW201241249A (en) * | 2011-04-12 | 2012-10-16 | Dingten Ind Inc | Single crystal growth method for vertical high temperature and high pressure group III-V compound |
KR20210070400A (en) | 2012-02-14 | 2021-06-14 | 엔테그리스, 아이엔씨. | Carbon dopant gas and co-flow for implant beam and source life performance |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1029803B (en) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Process for producing a compound or an alloy in crystalline form by fusing the components together in a closed system |
NL297600A (en) * | 1962-03-29 |
-
1968
- 1968-03-08 JP JP43015116A patent/JPS4820106B1/ja active Pending
-
1969
- 1969-03-06 GB GB1251251D patent/GB1251251A/en not_active Expired
- 1969-03-07 DE DE1911715A patent/DE1911715B2/en not_active Ceased
- 1969-03-10 US US805626A patent/US3615203A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51113903U (en) * | 1975-03-12 | 1976-09-16 |
Also Published As
Publication number | Publication date |
---|---|
GB1251251A (en) | 1971-10-27 |
US3615203A (en) | 1971-10-26 |
DE1911715B2 (en) | 1976-01-02 |
DE1911715A1 (en) | 1969-10-09 |