TWI347741B - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing methodInfo
- Publication number
- TWI347741B TWI347741B TW093113874A TW93113874A TWI347741B TW I347741 B TWI347741 B TW I347741B TW 093113874 A TW093113874 A TW 093113874A TW 93113874 A TW93113874 A TW 93113874A TW I347741 B TWI347741 B TW I347741B
- Authority
- TW
- Taiwan
- Prior art keywords
- device manufacturing
- lithographic apparatus
- lithographic
- manufacturing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03253420 | 2003-05-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200507445A TW200507445A (en) | 2005-02-16 |
TWI347741B true TWI347741B (en) | 2011-08-21 |
Family
ID=33560883
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093113874A TWI347741B (en) | 2003-05-30 | 2004-05-17 | Lithographic apparatus and device manufacturing method |
TW100112333A TWI442694B (zh) | 2003-05-30 | 2004-05-17 | 微影裝置及元件製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100112333A TWI442694B (zh) | 2003-05-30 | 2004-05-17 | 微影裝置及元件製造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7804574B2 (zh) |
JP (2) | JP4317081B2 (zh) |
KR (1) | KR100602922B1 (zh) |
CN (2) | CN1573567B (zh) |
SG (1) | SG116549A1 (zh) |
TW (2) | TWI347741B (zh) |
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US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
KR101643112B1 (ko) * | 2003-02-26 | 2016-07-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
KR101178754B1 (ko) * | 2003-04-10 | 2012-09-07 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
KR101178756B1 (ko) | 2003-04-11 | 2012-08-31 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법 |
KR101728664B1 (ko) * | 2003-05-28 | 2017-05-02 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치, 및 디바이스 제조 방법 |
TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
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TWI433212B (zh) | 2003-06-19 | 2014-04-01 | 尼康股份有限公司 | An exposure apparatus, an exposure method, and an element manufacturing method |
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CN101866114A (zh) | 2010-10-20 |
KR100602922B1 (ko) | 2006-07-19 |
CN1573567A (zh) | 2005-02-02 |
US20050007570A1 (en) | 2005-01-13 |
US20070046915A1 (en) | 2007-03-01 |
JP4317081B2 (ja) | 2009-08-19 |
SG116549A1 (en) | 2005-11-28 |
KR20040103401A (ko) | 2004-12-08 |
TW201134087A (en) | 2011-10-01 |
JP4551470B2 (ja) | 2010-09-29 |
US7808611B2 (en) | 2010-10-05 |
JP2009065188A (ja) | 2009-03-26 |
CN1573567B (zh) | 2010-05-26 |
US8416385B2 (en) | 2013-04-09 |
US20100321652A1 (en) | 2010-12-23 |
TWI442694B (zh) | 2014-06-21 |
CN101866114B (zh) | 2012-02-08 |
JP2004363588A (ja) | 2004-12-24 |
US7804574B2 (en) | 2010-09-28 |
TW200507445A (en) | 2005-02-16 |
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