TWI335679B - - Google Patents
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- Publication number
- TWI335679B TWI335679B TW096106878A TW96106878A TWI335679B TW I335679 B TWI335679 B TW I335679B TW 096106878 A TW096106878 A TW 096106878A TW 96106878 A TW96106878 A TW 96106878A TW I335679 B TWI335679 B TW I335679B
- Authority
- TW
- Taiwan
- Prior art keywords
- type semiconductor
- semiconductor layer
- layer
- light
- emitting device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 172
- 239000000758 substrate Substances 0.000 claims description 40
- 239000010410 layer Substances 0.000 claims 50
- 239000011229 interlayer Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006051596A JP2007234707A (ja) | 2006-02-28 | 2006-02-28 | 半導体発光素子 |
| JP2006078624A JP2007258338A (ja) | 2006-03-22 | 2006-03-22 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802973A TW200802973A (en) | 2008-01-01 |
| TWI335679B true TWI335679B (enExample) | 2011-01-01 |
Family
ID=38458966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096106878A TW200802973A (en) | 2006-02-28 | 2007-02-27 | Semiconductor light emitting element |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7781791B2 (enExample) |
| EP (1) | EP2003704A1 (enExample) |
| KR (1) | KR20080087175A (enExample) |
| TW (1) | TW200802973A (enExample) |
| WO (1) | WO2007099855A1 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI344707B (en) * | 2007-04-20 | 2011-07-01 | Huga Optotech Inc | Semiconductor light-emitting device with high light extraction efficiency |
| US8536584B2 (en) * | 2007-11-14 | 2013-09-17 | Cree, Inc. | High voltage wire bond free LEDS |
| US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| US9634191B2 (en) * | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US8575633B2 (en) * | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
| JP5109742B2 (ja) * | 2008-03-21 | 2012-12-26 | サンケン電気株式会社 | 半導体発光装置 |
| JP2009260316A (ja) * | 2008-03-26 | 2009-11-05 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置 |
| DE102008024327A1 (de) | 2008-05-20 | 2009-11-26 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht |
| DE102008035784A1 (de) | 2008-07-31 | 2010-02-11 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| KR101064081B1 (ko) * | 2008-12-29 | 2011-09-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| TWI470823B (zh) * | 2009-02-11 | 2015-01-21 | Epistar Corp | 發光元件及其製造方法 |
| US20100327300A1 (en) | 2009-06-25 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Contact for a semiconductor light emitting device |
| KR100993094B1 (ko) * | 2010-02-01 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 및 발광소자 패키지 |
| CN101789477A (zh) * | 2010-02-24 | 2010-07-28 | 中国科学院半导体研究所 | 全侧壁锯齿状粗化发光二极管芯片的制备方法 |
| KR100999771B1 (ko) * | 2010-02-25 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
| CN101807644A (zh) * | 2010-03-05 | 2010-08-18 | 厦门大学 | 一种高出光效率GaN基发光二极管的制备方法 |
| KR101047720B1 (ko) * | 2010-04-23 | 2011-07-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| KR101039948B1 (ko) | 2010-04-23 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| US8723160B2 (en) | 2010-07-28 | 2014-05-13 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having peripheral electrode frame and method of fabrication |
| US8283652B2 (en) * | 2010-07-28 | 2012-10-09 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) die having electrode frame and method of fabrication |
| US8664684B2 (en) | 2010-08-31 | 2014-03-04 | Micron Technology, Inc. | Solid state lighting devices with improved contacts and associated methods of manufacturing |
| CN101944564B (zh) * | 2010-09-03 | 2013-06-05 | 湘能华磊光电股份有限公司 | Led芯片及其制备方法 |
| US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
| JP2012114377A (ja) * | 2010-11-26 | 2012-06-14 | Mitsubishi Chemicals Corp | 半導体発光素子 |
| KR20120100193A (ko) * | 2011-03-03 | 2012-09-12 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 |
| CN102655195B (zh) * | 2011-03-03 | 2015-03-18 | 赛恩倍吉科技顾问（深圳）有限公司 | 发光二极管及其制造方法 |
| USD648287S1 (en) * | 2011-03-30 | 2011-11-08 | Epistar Corporation | Light-emitting diode |
| JP2013021250A (ja) * | 2011-07-14 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
| TWD156894S (zh) * | 2013-02-08 | 2013-11-01 | 旭明光電股份有限公司 | 發光二極體晶片 |
| CN103594587B (zh) * | 2013-10-21 | 2016-03-02 | 溧阳市东大技术转移中心有限公司 | 一种发光二极管打线电极的制造方法 |
| USD826871S1 (en) | 2014-12-11 | 2018-08-28 | Cree, Inc. | Light emitting diode device |
| KR102432226B1 (ko) * | 2017-12-01 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| JP3240926B2 (ja) | 1996-06-25 | 2001-12-25 | 日立電線株式会社 | 発光素子 |
| JPH10150220A (ja) | 1996-11-15 | 1998-06-02 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| JP2907170B2 (ja) * | 1996-12-28 | 1999-06-21 | サンケン電気株式会社 | 半導体発光素子 |
| US6091085A (en) | 1998-02-19 | 2000-07-18 | Agilent Technologies, Inc. | GaN LEDs with improved output coupling efficiency |
| JPH11251629A (ja) | 1998-02-27 | 1999-09-17 | Daido Steel Co Ltd | 半導体発光素子の製造方法 |
| JP2000091638A (ja) | 1998-09-14 | 2000-03-31 | Matsushita Electric Ind Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| US6646292B2 (en) | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
| US6885035B2 (en) | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
| JP2002319708A (ja) | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Ｌｅｄチップおよびｌｅｄ装置 |
| EP1263058B1 (en) | 2001-05-29 | 2012-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting element |
| JP3852000B2 (ja) * | 2001-09-28 | 2006-11-29 | 豊田合成株式会社 | 発光素子 |
| JP2003168820A (ja) | 2001-12-03 | 2003-06-13 | Sony Corp | 剥離方法、レーザー光の照射方法及びこれらを用いた素子の製造方法 |
| JP4590905B2 (ja) | 2003-10-31 | 2010-12-01 | 豊田合成株式会社 | 発光素子および発光装置 |
-
2007
- 2007-02-22 US US12/224,524 patent/US7781791B2/en not_active Expired - Fee Related
- 2007-02-22 EP EP07714804A patent/EP2003704A1/en not_active Withdrawn
- 2007-02-22 WO PCT/JP2007/053306 patent/WO2007099855A1/ja not_active Ceased
- 2007-02-22 KR KR1020087020518A patent/KR20080087175A/ko not_active Ceased
- 2007-02-27 TW TW096106878A patent/TW200802973A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7781791B2 (en) | 2010-08-24 |
| EP2003704A1 (en) | 2008-12-17 |
| KR20080087175A (ko) | 2008-09-30 |
| WO2007099855A1 (ja) | 2007-09-07 |
| TW200802973A (en) | 2008-01-01 |
| US20090026468A1 (en) | 2009-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |