KR20080087175A - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR20080087175A
KR20080087175A KR1020087020518A KR20087020518A KR20080087175A KR 20080087175 A KR20080087175 A KR 20080087175A KR 1020087020518 A KR1020087020518 A KR 1020087020518A KR 20087020518 A KR20087020518 A KR 20087020518A KR 20080087175 A KR20080087175 A KR 20080087175A
Authority
KR
South Korea
Prior art keywords
type semiconductor
semiconductor layer
layer
light emitting
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087020518A
Other languages
English (en)
Korean (ko)
Inventor
미쯔히꼬 사까이
다다히로 오까자끼
겐 나까하라
Original Assignee
로무 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006051596A external-priority patent/JP2007234707A/ja
Priority claimed from JP2006078624A external-priority patent/JP2007258338A/ja
Application filed by 로무 가부시키가이샤 filed Critical 로무 가부시키가이샤
Publication of KR20080087175A publication Critical patent/KR20080087175A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
KR1020087020518A 2006-02-28 2007-02-22 반도체 발광 소자 Ceased KR20080087175A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00051596 2006-02-28
JP2006051596A JP2007234707A (ja) 2006-02-28 2006-02-28 半導体発光素子
JP2006078624A JP2007258338A (ja) 2006-03-22 2006-03-22 半導体発光素子
JPJP-P-2006-00078624 2006-03-22

Publications (1)

Publication Number Publication Date
KR20080087175A true KR20080087175A (ko) 2008-09-30

Family

ID=38458966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020518A Ceased KR20080087175A (ko) 2006-02-28 2007-02-22 반도체 발광 소자

Country Status (5)

Country Link
US (1) US7781791B2 (enExample)
EP (1) EP2003704A1 (enExample)
KR (1) KR20080087175A (enExample)
TW (1) TW200802973A (enExample)
WO (1) WO2007099855A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8890182B2 (en) 2010-02-01 2014-11-18 Lg Innotek Co., Ltd. Light emitting device, light emitting device package

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TWI344707B (en) * 2007-04-20 2011-07-01 Huga Optotech Inc Semiconductor light-emitting device with high light extraction efficiency
US8536584B2 (en) * 2007-11-14 2013-09-17 Cree, Inc. High voltage wire bond free LEDS
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8575633B2 (en) * 2008-12-08 2013-11-05 Cree, Inc. Light emitting diode with improved light extraction
JP5109742B2 (ja) * 2008-03-21 2012-12-26 サンケン電気株式会社 半導体発光装置
JP2009260316A (ja) * 2008-03-26 2009-11-05 Panasonic Electric Works Co Ltd 半導体発光素子およびそれを用いる照明装置
DE102008024327A1 (de) 2008-05-20 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht
DE102008035784A1 (de) 2008-07-31 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
KR101064081B1 (ko) * 2008-12-29 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI470823B (zh) * 2009-02-11 2015-01-21 Epistar Corp 發光元件及其製造方法
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
CN101789477A (zh) * 2010-02-24 2010-07-28 中国科学院半导体研究所 全侧壁锯齿状粗化发光二极管芯片的制备方法
KR100999771B1 (ko) * 2010-02-25 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN101814565A (zh) * 2010-03-02 2010-08-25 上海蓝光科技有限公司 一种发光二极管芯片的结构及其制造方法
CN101807644A (zh) * 2010-03-05 2010-08-18 厦门大学 一种高出光效率GaN基发光二极管的制备方法
KR101047720B1 (ko) * 2010-04-23 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8723160B2 (en) 2010-07-28 2014-05-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
US8283652B2 (en) * 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
US8664684B2 (en) 2010-08-31 2014-03-04 Micron Technology, Inc. Solid state lighting devices with improved contacts and associated methods of manufacturing
CN101944564B (zh) * 2010-09-03 2013-06-05 湘能华磊光电股份有限公司 Led芯片及其制备方法
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
JP2012114377A (ja) * 2010-11-26 2012-06-14 Mitsubishi Chemicals Corp 半導体発光素子
KR20120100193A (ko) * 2011-03-03 2012-09-12 서울옵토디바이스주식회사 발광 다이오드 칩
CN102655195B (zh) * 2011-03-03 2015-03-18 赛恩倍吉科技顾问（深圳）有限公司 发光二极管及其制造方法
USD648287S1 (en) * 2011-03-30 2011-11-08 Epistar Corporation Light-emitting diode
JP2013021250A (ja) * 2011-07-14 2013-01-31 Toshiba Corp 半導体発光素子
TWD156894S (zh) * 2013-02-08 2013-11-01 旭明光電股份有限公司 發光二極體晶片
CN103594587B (zh) * 2013-10-21 2016-03-02 溧阳市东大技术转移中心有限公司 一种发光二极管打线电极的制造方法
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
KR102432226B1 (ko) * 2017-12-01 2022-08-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자

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US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP3240926B2 (ja) 1996-06-25 2001-12-25 日立電線株式会社 発光素子
JPH10150220A (ja) 1996-11-15 1998-06-02 Toyoda Gosei Co Ltd 半導体発光素子
JP2907170B2 (ja) * 1996-12-28 1999-06-21 サンケン電気株式会社 半導体発光素子
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
JPH11251629A (ja) 1998-02-27 1999-09-17 Daido Steel Co Ltd 半導体発光素子の製造方法
JP2000091638A (ja) 1998-09-14 2000-03-31 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6646292B2 (en) 1999-12-22 2003-11-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting device and method
US6885035B2 (en) 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
JP2002319708A (ja) 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ｌｅｄチップおよびｌｅｄ装置
EP1263058B1 (en) 2001-05-29 2012-04-18 Toyoda Gosei Co., Ltd. Light-emitting element
JP3852000B2 (ja) * 2001-09-28 2006-11-29 豊田合成株式会社 発光素子
JP2003168820A (ja) 2001-12-03 2003-06-13 Sony Corp 剥離方法、レーザー光の照射方法及びこれらを用いた素子の製造方法
JP4590905B2 (ja) 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890182B2 (en) 2010-02-01 2014-11-18 Lg Innotek Co., Ltd. Light emitting device, light emitting device package
US9391248B2 (en) 2010-02-01 2016-07-12 Lg Innotek Co., Ltd Light emitting device, light emitting device package
KR101039948B1 (ko) * 2010-04-23 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8338847B2 (en) 2010-04-23 2012-12-25 Lg Innotek Co., Ltd. Light emitting device, method of manufacturing the same, light emitting device package and lighting system

Also Published As

Publication number Publication date
US7781791B2 (en) 2010-08-24
EP2003704A1 (en) 2008-12-17
TWI335679B (enExample) 2011-01-01
WO2007099855A1 (ja) 2007-09-07
TW200802973A (en) 2008-01-01
US20090026468A1 (en) 2009-01-29

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