JP2007227938A - 窒化物系半導体発光素子及びその製造方法 - Google Patents
窒化物系半導体発光素子及びその製造方法 Download PDFInfo
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- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
【解決手段】基板上に順次にn−クラッド層、活性層及びp−クラッド層を形成する段階、p−クラッド層の上面に多数のマスキング・ドットを形成する段階、マスキング・ドットを回避し、p−クラッド層上に凹凸構造を有するp−コンタクト層を形成する段階、p−コンタクト層上面の一部領域からn−クラッド層の所定深さまで乾式エッチングし、n−クラッド層にp−コンタクト層の凹凸形状が転写されたn−凹凸コンタクト面を形成する段階、n−凹凸コンタクト面上にn−電極を形成する段階、及びp−コンタクト層上にp−電極を形成する段階を含む。これにより、光抽出効率が向上しうる。
【選択図】図2
Description
4 空気層、
8a 平坦な界面、
8b 凹凸構造の界面、
10 基板、
20 n−クラッド層、
20a n−凹凸コンタクト面、
30 活性層、
40 p−クラッド層、
50 マスキング・ドット、
60 p−コンタクト層、
70 透明電極、
100 n−電極、
120 p−電極。
Claims (15)
- 基板上に順次にn−クラッド層、活性層及びp−クラッド層を形成する段階と、
前記p−クラッド層の上面に多数のマスキング・ドットを形成する段階と、
前記マスキング・ドットを回避し、前記p−クラッド層上に凹凸構造を有するp−コンタクト層を形成する段階と、
前記p−コンタクト層上面の一部領域から前記n−クラッド層の所定深さまで乾式エッチングし、前記n−クラッド層に前記p−コンタクト層の凹凸形状の転写されたn−凹凸コンタクト面を形成する段階と、
前記n−凹凸コンタクト面上にn−電極を形成する段階と、
前記p−コンタクト層上にp−電極を形成する段階と、を含むことを特徴とする窒化物系半導体発光素子の製造方法。 - 前記マスキング・ドットは、SixNy物質で形成されることを特徴とする請求項1に記載の窒化物系半導体発光素子の製造方法。
- 前記マスキング・ドットは、有機金属化学気相蒸着または分子線エピタキシー工程によって形成されることを特徴とする請求項1または2に記載の窒化物系半導体発光素子の製造方法。
- 前記マスキング・ドットは、Si気相ソースとN気相ソースとを供給し、これらを化学反応させることによって形成されることを特徴とする請求項1〜3のいずれか1項に記載の窒化物系半導体発光素子の製造方法。
- 前記Si気相ソースは、SiH4、Si2H6、ジ−tert−ブチルシラン(DTBSi)及びテトラエチルシラン(TESi)からなる群から選択された少なくともいずれか一つの物質を含むことを特徴とする請求項4に記載の窒化物系半導体発光素子の製造方法。
- 前記N気相ソースは、NH3を含むことを特徴とする請求項4または5に記載の窒化物系半導体発光素子の製造方法。
- 前記p−コンタクト層は、前記p−クラッド層の形成物質と実質的に同一な物質で形成されることを特徴とする請求項1〜6のいずれか1項に記載の窒化物系半導体発光素子の製造方法。
- 前記p−コンタクト層の凹凸段差は、10nm以上に形成されることを特徴とする請求項1に記載の窒化物系半導体発光素子の製造方法。
- 前記p−電極は、透明電極または反射電極のうち、少なくともいずれか一つを備えることを特徴とする請求項1に記載の窒化物系半導体発光素子の製造方法。
- 請求項1ないし請求項9のうちいずれか1項に記載の方法で製造されたことを特徴とする窒化物系半導体発光素子。
- 上面の所定領域がエッチングされて形成された段差部を備え、前記段差部にn−凹凸コンタクト面が形成されたn−クラッド層と、
前記n−クラッド層の上面に形成された活性層と、
前記活性層上に形成されたp−クラッド層と、
前記p−クラッド層の上面に形成された多数のマスキング・ドットと、
前記マスキング・ドットを回避し、前記p−クラッド層上に形成され、凹凸構造を有するp−コンタクト層と、
前記n−凹凸コンタクト面上に形成されたn−電極と、
前記p−コンタクト層上に形成されたp−電極と、を備えることを特徴とする窒化物系半導体発光素子。 - 前記マスキング・ドットは、SixNy物質から形成されたことを特徴とする請求項11に記載の窒化物系半導体発光素子。
- 前記p−コンタクト層は、前記p−クラッド層の形成物質と実質的に同一な物質から形成されたことを特徴とする請求項11または12に記載の窒化物系半導体発光素子。
- 前記p−コンタクト層の凹凸段差は、10nm以上に形成されたことを特徴とする請求項11〜13のいずれか1項に記載の窒化物系半導体発光素子。
- 前記p−電極は、透明電極または反射電極のうち、少なくともいずれか一つを含むことを特徴とする請求項11〜14のいずれか1項に記載の窒化物系半導体発光素子。
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KR1020060018445A KR100896576B1 (ko) | 2006-02-24 | 2006-02-24 | 질화물계 반도체 발광소자 및 그 제조방법 |
KR10-2006-0018445 | 2006-02-24 |
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JP5037169B2 JP5037169B2 (ja) | 2012-09-26 |
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US20070202624A1 (en) | 2007-08-30 |
US7541206B2 (en) | 2009-06-02 |
KR20070088176A (ko) | 2007-08-29 |
CN101026212A (zh) | 2007-08-29 |
JP5037169B2 (ja) | 2012-09-26 |
KR100896576B1 (ko) | 2009-05-07 |
CN101026212B (zh) | 2010-06-16 |
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