CN101026212B - 氮化物基半导体发光器件及其制造方法 - Google Patents
氮化物基半导体发光器件及其制造方法 Download PDFInfo
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Abstract
提供了一种结构被改进以提高光取出效率的氮化物基半导体发光器件及其制备方法。该方法包括如下操作：在衬底上依次形成n盖层、有源层和p盖层；在p盖层的上表面上形成多个掩蔽点；在掩蔽点之间的p盖层部分上形成具有粗糙表面的p接触层；从p接触层的部分上表面干蚀刻至n盖层的预定深度，从而将n盖层的n接触表面形成为具有与p接触层相同的粗糙形状的粗糙n接触表面；在粗糙n接触表面上形成n电极；以及在p接触层上形成p电极。
Description
技术领域
本发明涉及一种半导体发光器件，尤其涉及一种结构被改进以提高光取出效率的氮化物基半导体发光器件及其制造方法。
背景技术
发光二极管(LED)是利用化合物半导体的特性用于发射红外线、可见光或者其他光线形式的电能的器件。III族氮化物化合物半导体是直接跃迁半导体。III族氮化物化合物半导体被广泛应用于发光器件，例如LED或激光二极管(LD)，因为此LED或LD相比于利用其他半导体的器件能够在高温下更加稳定地工作。这种III族氮化物化合物半导体通常形成在蓝宝石(Al2O3)或SiC衬底上。LED的发射效率取决于其内量子效率和光取出效率。为提高光发射效率，正在开发各种提高光取出效率的发光二极管结构。
图1A和1B是示出依赖于具有不同折射率的材料层之间的界面结构的光路的示意图。图1A中，第一材料层2具有平坦界面8a，和图1B中，第一材料层2具有粗糙界面8b。
参照图1A，当光想要从具有较大折射率的第一材料层2通过进入具有较小折射率(n＝1)的空气层4时，光至少必须以预定角度进入平坦界面8a。如果光进入的角度小于该预定角度，光在平坦界面8a处被全内反射，且光取出效率大大降低。因此，尝试使界面成为非平坦的方法以避免光取出效率降低。
参照图1B，通过在第一材料层2与空气层4之间形成粗糙界面8b，从第一材料层2进入空气层4的光保持等于或大于在粗糙界面8b处预定入射角的角度。结果是，在粗糙界面8b处而不是在平坦界面8a处，显著提高了光取出效率。
传统的氮化物基化合物半导体LED通过依次执行以下操作制造：在衬底上依次形成n盖层、有源层和p盖层；从p盖层的部分上表面蚀刻至n盖层的预期深度，从而形成n接触表面；在n接触表面上形成n电极；以及在p盖层上形成p电极。由于氮化物基化合物半导体的折射率高于空气层的折射率(n＝1)，例如，具有2.54的GaN折射率n，因此在传统LED结构中，在有源层处产生的光难以通过平坦的GaN表面并取出到外面。于是氮化物基半导体LED的光取出效率不高。为解决此问题，提议在p接触层或n接触层上形成粗糙表面。而且，日本专利公开第2004-221529号公开了一种在没有形成p型和n型电极层处的非电极区域的表面处形成粗糙表面的方法。然而，在这些提议的方法中，通过在p接触层的表面上淀积金属点掩模并湿蚀刻p接触层形成粗糙表面，或者通过干蚀刻n盖层以形成n接触层并湿蚀刻n接触层的表面形成，或者通过在非电极区的表面上执行附加的光刻和干蚀刻形成。因此，上述方法需要许多附加的工艺。而且，为了同时得到上述的三种结构，必须全部执行上述工艺，从而使制造工艺变复杂。进一步，在形成粗糙表面的传统技术中，执行形成半导体发光器件的工艺，然后执行附加的化学蚀刻工艺。因此，制造工艺变复杂，且生产率低。
发明内容
本发明提供一种结构被改进以提高光取出效率的氮化物基半导体发光器件及其制备方法。
按照本发明的一方面，提供一种氮化物基半导体发光器件的制造方法，该方法包括：在衬底上依次形成n盖层、有源层和p盖层；在p盖层的上表面上形成多个掩蔽点；在掩蔽点之间的p盖层部分上形成具有粗糙表面的p接触层；从p接触层的部分上表面干蚀刻至n盖层的预期深度，从而形成具有与p接触层相同的粗糙形状的n盖层的粗糙n接触表面；在粗糙n接触表面上形成n电极；以及在p接触层上形成p电极。
按照本发明的另一方面，提供一种氮化物基半导体发光器件，该器件包括：n盖层，具有通过蚀刻n盖层的上表面的预定部分形成的台阶部分，其中台阶部分具有粗糙的n接触上表面；形成于n盖层的上表面上的有源层；形成于有源层上的p盖层；形成于p盖层的上表面上的多个掩蔽点；形成于掩蔽点之间的p盖层部分上以具有粗糙结构的p接触层；形成于粗糙的n接触表面上的n电极；以及形成于p接触层上的p电极。
掩蔽点可由SixNy形成。掩蔽点可利用选自有机金属化学气相淀积工艺和分子束外延工艺的工艺形成。尤其是，可通过供应Si气态源和N气态源并使Si气态源和N气态源化学反应形成掩蔽点。Si气态源包括选自SiH4、Si2H6、二叔丁基硅烷(DTBSi)和三乙基硅烷(TESi)的至少一种材料。N气态源包括NH3。优选地，p接触层可由与用于形成p盖层的材料基本相同的材料形成。p接触层的粗糙表面的深度优选等于或大于10nm。p电极可包括透明电极和反射电极中至少一个。
按照本发明，可提供结构被改进以提高光取出效率的氮化物基半导体发光器件。尤其是，按照本发明，通过将p接触层、n接触层和n电极形成为具有粗糙表面来制造LED，而不附加光刻和蚀刻工艺，从而最大化LED的光取出效率。
附图说明
通过参照附图详细说明本发明的示范性实施例，本发明的上述以及其他特征和优点变得更加明显，其中：
图1A是示出在具有不同折射率的材料层之间的平坦界面处的光路的示意图；
图1B是示出在具有不同折射率的材料层之间的粗糙界面处的光路的示意图；
图2是按照本发明实施例的氮化物基半导体发光器件的放大横截面图；
图3是图2的氮化物基半导体发光器件的p接触层的上表面的SEM照片；
图4A和4B是分别具有40nm和70nm台阶的粗糙表面时、图2的氮化物基半导体发光器件的p接触层的AFM照片；
图5是表示图4A和4B示出的包括分别具有40nm和70nm台阶的粗糙表面的p接触层的氮化物基半导体发光器件样品的光输出特性的曲线图；以及
图6A至6F示出了按照本发明的实施例，制造图2的氮化物基半导体发光器件的工艺。
具体实施方式
现参考附图更加全面地描述本发明，在附图中示出了本发明的示范性实施例。附图中，为了清楚放大了层和区域的厚度。
图2是按照本发明实施例的氮化物基半导体发光器件的放大横截面图。图3是图2氮化物基半导体发光器件的p接触层的上表面的SEM照片。
参照图2，氮化物基半导体发光器件包括依次叠置在衬底10上的n盖层20、有源层30、p盖层40、多个掩蔽点50以及p接触层60。P接触层60形成于p盖层40上，位于掩蔽点50之间，且具有粗糙结构。并且，n电极100和p电极120分别形成于n盖层20的蚀刻表面20a和p接触层60上。这里，由于n盖层20的蚀刻表面20a是粗糙的n粗糙接触表面20a，在有源层30中产生并传播到n电极100的光的大部分可以在n粗糙接触表面20a处被反射。反射光返回到有源层30以改进内量子效率，或者被取出到外面以提高氮化物基半导体发光器件的光取出效率。
需要多个掩蔽点50，以在p盖层40上形成粗糙p接触层60，且也可以通过衍射和/或散射在有源层30中产生的光来提高光取出效率。这里，掩蔽点50可由SiN形成。为在p盖层40上形成p接触层60的粗糙结构，可以适当调整掩蔽点50的厚度和宽度。
优选地，衬底10由Si、GaAs、SiC、GaN和蓝宝石中的一种形成。N盖层20可由n-GaN基III-V族氮化物半导体形成，优选是n-GaN或n-GaN/AlGaN。而且，p盖层40可由p-GaN基III-V族氮化物半导体形成，优选是p-GaN或p-GaN/AlGaN。
有源层30可由通式为InxAlyGa1-x-yN(0≤x≤1，0≤y≤1以及0≤x+y≤1)的GaN基III-V族氮化物半导体形成，且优选由InGaN或AlGaN形成。这里，有源层30可具有多量子阱(MQW)结构或者单量子阱结构。有源层30的此结构不会限制本发明的技术范围。例如，有源层30具有GaN/InGaN/GaN MQW结构或者GaN/AlGaN/GaN MQW结构可能是最优选的。
P接触层60可由基本与p盖层40相同的材料形成。例如，p接触层60可由p-GaN基III-V族氮化物半导体形成，优选是p-GaN或p-GaN/AlGaN。而且，p接触层60的粗糙表面的深度可优选超过10nm。这里，由于p接触层60具有粗糙表面，p接触层60的粗糙表面可以衍射和/或散射在有源层30中产生的光，从而提高光取出效率。
优选地，p电极120还包括至少一个透明电极70或反射电极(未示出)。透明电极70可形成于p接触层60的整个表面上，并且可由例如氧化铟锡(ITO)的透明导电材料形成。透明电极70优选可形成为对应p接触层60的粗糙结构。
在图2的氮化物基半导体发光器件中，当所需电压加在n电极100和p电极120之间时，分别来自n盖层120和p盖层40的电子和空穴注入有源层30并在有源层30中结合，从而可从有源层30发射光。
按照本发明的当前实施例，氮化物基半导体发光器件的光发射表面是粗糙的，以便衍射和/或散射在有源层30中产生的光，从而提高光取出效率。而且，在n盖层20处形成n接触粗糙表面20a，和在n接触表面20a上形成n电极100，从而相比于现有技术提高了光取出效率。因此，按照本发明当前实施例的氮化物基半导体发光器件的光取出效率相比于现有技术可得以改善。
图4A和4B是当具有分别为40nm和70nm深度的粗糙表面时，图2的氮化物基半导体发光器件的p接触层60的AFM照片。图5是表示包括图4A和4B示出的分别具有40nm和70nm台阶的粗糙表面的p接触层的氮化物基半导体发光器件样品的光输出特性的曲线图。这里，平面样品是传统具有蓝宝石/n-GaN/MQW/p-GaN结构的平坦表面LED，以及织构1样品和织构2样品是包括具有分别为40nm和70nm深度的粗糙表面的p接触层的氮化物基半导体发光器件。
图6A至6F是按照本发明实施例的、图2的氮化物基半导体发光器件的制造工艺的示意图。采用此方法，可通过将p接触层60、n接触表面20a和n电极100形成为具有粗糙表面来制备氮化物基半导体发光器件，而不需要向传统LED制造方法增加光刻和蚀刻工艺，从而最大化光取出效率。
参照图6A，通过在衬底10上堆叠相同的材料层(例如，在GaN衬底上生长GaN基结晶层)或不同的材料层(例如，在蓝宝石衬底上生长GaN基结晶层)，形成n盖层20。衬底10可由Si、GaAs、SiC、GaN或蓝宝石形成。n盖层20可由n-GaN基III-V族氮化物基半导体形成，且优选可由n-GaN或n-GaN/AlGaN形成。
此后，相继在n盖层20上形成有源层30和p盖层40。有源层30可由通式为InxAlyGa1-x-yN(0≤x≤1，0≤y≤1以及0≤x+y≤1)的GaN基III-V族氮化物半导体形成，且优选可由InGaN或AlGaN形成。这里，有源层30可具有多量子阱(MQW)结构或者单量子阱结构。有源层30的此结构不会限制本发明的技术范围。优选地，有源层30可具有GaN/InGaN/GaNMQW结构或者GaN/AlGaN/GaN MQW结构。
而且，p盖层40可由p-GaN基III-V族氮化物半导体形成，且优选可由p-GaN或p-GaN/AlGaN形成。
n盖层20、有源层30和p盖层40均可通过气相淀积形成，例如卤化物或氢化物气相外延(HVPE)、金属有机化学气相淀积(MOCVD)或分子束外延(MBE)。这些气相淀积方法是公知的，因此省略其详细说明。
参照图6B和6C，在p盖层40的上表面上形成多个掩蔽点50。
掩蔽点50可由SixNy形成，且可利用有机金属化学气相淀积工艺或分子束外延工艺形成。更具体地，通过向p盖层40的上表面供应Si气态源和N气态源并使Si气态和N气态化学反应，形成掩蔽点50。这里，Si气态源包括SiH4、Si2H6、二叔丁基硅烷(DTBSi，ditributhyle silane)和三乙基硅烷(TESi)中的至少一种，和N气态源包括NH3。掩蔽点50可形成几个nm至几百nm的厚度。
此后，在p盖层40上形成位于掩蔽点50之间的具有粗糙结构的p接触层60。由于掩蔽点50由例如SixNy的氮化物形成，在掩蔽点50上没有外延生长III-V族氮化物半导体。利用氮化物的此特性，可形成具有粗糙结构的p接触层60。
P接触层可优选由基本与p盖层40相同的材料形成。例如，p接触层60可由p-GaN基III-V族氮化物半导体形成，且优选可由p-GaN或p-GaN/AlGaN形成。而且，p接触层60的粗糙表面的深度可优选不小于10nm。P接触层60可通过气相淀积形成，例如有机金属化学气相淀积或分子束外延。
参照图6D，通过从p接触层60的部分上表面干蚀刻至n盖层20的预期深度并传递p接触层60的粗糙形状给n盖层20，在n盖层20上形成n接触粗糙表面20a(图6D中未示出)。优选地，可利用等离子体蚀刻工艺干蚀刻n盖层20。
参照图6E和6F，在n接触粗糙表面20a和p接触层60上，分别形成n电极100和p电极120。优选地，p电极120可进一步包括透明电极70和反射电极(未示出)中至少一个。透明电极70可由透明导电材料形成，例如氧化铟锡(ITO)，通过诸如有机金属化学气相淀积或分子束外延的气相淀积。透明电极70优选可形成于p接触层60的整个表面上。而且，透明电极70优选可对应p接触层60的粗糙图案形成。
n电极100和p电极120可由例如Al、Ag、Au、Pd等金属形成。尤其是，n电极100可由具有良好反射特性的材料形成，例如Ag。利用上述的工艺，可制造本发明的氮化物基半导体发光器件。
按照本发明，可提供结构被改进以提高光取出效率的氮化物基半导体发光器件。氮化物基半导体发光器件的发光表面具有粗糙结构以便衍射和/或散射在有源层中产生的光，从而增加光取出效率。而且，在n盖层处形成粗糙n接触表面，和在粗糙n接触表面上形成n电极，于是相比于现有技术提高了光取出效率。因此，本发明的氮化物基半导体发光器件的光取出效率相比于现有技术得以改善。
尤其是，按照本发明，通过将p接触层、n接触层和n电极形成为具有粗糙表面来制造LED，而不附加光刻和蚀刻工艺，从而最大化LED的光取出效率。
尽管参照其示范性实施例具体示出和描述了本发明，但是本领域普通技术人员会理解，在不脱离附加权利要求界定的本发明精神和范围的情况下，可在其中做出各种形式和细节上的改变。
Claims (15)
1.一种氮化物基半导体发光器件的制造方法，包括：
在衬底上依次形成n盖层、有源层和p盖层；
在所述p盖层的上表面上形成多个掩蔽点；
在所述掩蔽点之间的p盖层部分上形成具有粗糙表面的p接触层，其中所述p接触层不形成在所述掩蔽点上；
从所述p接触层的部分上表面干蚀刻至所述n盖层的预期深度，从而形成具有与所述p接触层相同的粗糙形状的所述n盖层的粗糙n接触表面；
在所述粗糙n接触表面上形成n电极；以及
在所述p接触层上形成p电极。
2.权利要求1的方法，其中所述掩蔽点由SixNy形成。
3.权利要求2的方法，其中所述掩蔽点利用选自有机金属化学气相淀积工艺和分子束外延工艺的工艺形成。
4.权利要求3的方法，其中可通过供应Si气态源和N气态源并使Si气态源和N气态源化学反应形成所述掩蔽点。
5.权利要求4的方法，其中所述Si气态源包括选自SiH4、Si2H6、二叔丁基硅烷和三乙基硅烷的至少一种材料。
6.权利要求4的方法，其中所述N气态源包括NH3。
7.权利要求1的方法，其中所述p接触层由与用于形成所述p盖层的材料基本相同的材料形成。
8.权利要求1的方法，其中所述p接触层的粗糙表面的深度等于或大于10nm。
9.权利要求1的方法，其中所述p电极包括透明电极和反射电极中至少一个。
10.一种利用权利要求1的方法制造的氮化物基半导体发光器件。
11.一种氮化物基半导体发光器件，包括：
n盖层，具有通过蚀刻所述n盖层的上表面的预定部分形成的台阶部分，其中所述台阶部分具有粗糙的n接触上表面；
形成于所述n盖层的上表面上的有源层；
形成于所述有源层上的p盖层；
形成于所述p盖层的上表面上的多个掩蔽点；
形成于所述掩蔽点之间的p盖层部分上以具有粗糙结构的p接触层，其中所述p接触层不形成在所述掩蔽点上；
形成于所述粗糙的n接触表面上的n电极；以及
形成于所述p接触层上的p电极。
12.权利要求11的氮化物基半导体发光器件，其中所述掩蔽点由SiN形成。
13.权利要求11的氮化物基半导体发光器件，其中所述p接触层由与用于形成所述p盖层的材料基本相同的材料形成。
14.权利要求11的氮化物基半导体发光器件，其中所述p接触层的粗糙表面的深度等于或大于10nm。
15.权利要求11的氮化物基半导体发光器件，其中所述p电极包括透明电极和反射电极中至少一个。
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