TWI329928B - Power mosfet device structure for high frequency applications and its manufacturing method and application of the same - Google Patents

Power mosfet device structure for high frequency applications and its manufacturing method and application of the same Download PDF

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Publication number
TWI329928B
TWI329928B TW095115781A TW95115781A TWI329928B TW I329928 B TWI329928 B TW I329928B TW 095115781 A TW095115781 A TW 095115781A TW 95115781 A TW95115781 A TW 95115781A TW I329928 B TWI329928 B TW I329928B
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Taiwan
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layer
source
gate
electrode
insulating
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TW095115781A
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English (en)
Chinese (zh)
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TW200711128A (en
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Bhalla Anup
S Ng Daniel
Li Tiesheng
K Lui Sik
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Alpha & Omega Semiconductor
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    • HELECTRICITY
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
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    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
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    • H01L29/0843Source or drain regions of field-effect devices
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    • H01L29/0873Drain regions
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    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW095115781A 2005-05-09 2006-05-03 Power mosfet device structure for high frequency applications and its manufacturing method and application of the same TWI329928B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/125,506 US7659570B2 (en) 2005-05-09 2005-05-09 Power MOSFET device structure for high frequency applications

Publications (2)

Publication Number Publication Date
TW200711128A TW200711128A (en) 2007-03-16
TWI329928B true TWI329928B (en) 2010-09-01

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US (4) US7659570B2 (fr)
CN (1) CN101542738B (fr)
HK (1) HK1134715A1 (fr)
TW (1) TWI329928B (fr)
WO (1) WO2006122130A2 (fr)

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US20130093001A1 (en) 2013-04-18
US20160247899A1 (en) 2016-08-25
US20060249785A1 (en) 2006-11-09
CN101542738A (zh) 2009-09-23
US8963233B2 (en) 2015-02-24
HK1134715A1 (en) 2010-05-07
CN101542738B (zh) 2012-09-19
US9806175B2 (en) 2017-10-31
WO2006122130A3 (fr) 2009-04-16
US7659570B2 (en) 2010-02-09
WO2006122130A2 (fr) 2006-11-16
US8163618B2 (en) 2012-04-24
TW200711128A (en) 2007-03-16
US20100148246A1 (en) 2010-06-17

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