HK1134715A1 - Power mosfet device structure for high frequency applications - Google Patents

Power mosfet device structure for high frequency applications

Info

Publication number
HK1134715A1
HK1134715A1 HK10102382.0A HK10102382A HK1134715A1 HK 1134715 A1 HK1134715 A1 HK 1134715A1 HK 10102382 A HK10102382 A HK 10102382A HK 1134715 A1 HK1134715 A1 HK 1134715A1
Authority
HK
Hong Kong
Prior art keywords
high frequency
device structure
power mosfet
mosfet device
frequency applications
Prior art date
Application number
HK10102382.0A
Other languages
English (en)
Inventor
Anup Bhalla
Original Assignee
Alpha & Omega Semiconductor
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpha & Omega Semiconductor filed Critical Alpha & Omega Semiconductor
Publication of HK1134715A1 publication Critical patent/HK1134715A1/xx

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66719—With a step of forming an insulating sidewall spacer
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
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    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
HK10102382.0A 2005-05-09 2010-03-05 Power mosfet device structure for high frequency applications HK1134715A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/125,506 US7659570B2 (en) 2005-05-09 2005-05-09 Power MOSFET device structure for high frequency applications
PCT/US2006/017940 WO2006122130A2 (fr) 2005-05-09 2006-05-09 Structure de dispositif mosfet a puissance pour applications haute frequence

Publications (1)

Publication Number Publication Date
HK1134715A1 true HK1134715A1 (en) 2010-05-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
HK10102382.0A HK1134715A1 (en) 2005-05-09 2010-03-05 Power mosfet device structure for high frequency applications

Country Status (5)

Country Link
US (4) US7659570B2 (fr)
CN (1) CN101542738B (fr)
HK (1) HK1134715A1 (fr)
TW (1) TWI329928B (fr)
WO (1) WO2006122130A2 (fr)

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US7659570B2 (en) * 2005-05-09 2010-02-09 Alpha & Omega Semiconductor Ltd. Power MOSFET device structure for high frequency applications

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US20130093001A1 (en) 2013-04-18
US20160247899A1 (en) 2016-08-25
US20060249785A1 (en) 2006-11-09
CN101542738A (zh) 2009-09-23
US8963233B2 (en) 2015-02-24
CN101542738B (zh) 2012-09-19
US9806175B2 (en) 2017-10-31
WO2006122130A3 (fr) 2009-04-16
US7659570B2 (en) 2010-02-09
WO2006122130A2 (fr) 2006-11-16
US8163618B2 (en) 2012-04-24
TW200711128A (en) 2007-03-16
US20100148246A1 (en) 2010-06-17
TWI329928B (en) 2010-09-01

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