TWI311686B - - Google Patents
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- Publication number
- TWI311686B TWI311686B TW094141434A TW94141434A TWI311686B TW I311686 B TWI311686 B TW I311686B TW 094141434 A TW094141434 A TW 094141434A TW 94141434 A TW94141434 A TW 94141434A TW I311686 B TWI311686 B TW I311686B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- pattern
- transparent
- mask
- electrode
- Prior art date
Links
- 239000010408 film Substances 0.000 claims description 216
- 238000000034 method Methods 0.000 claims description 73
- 239000003795 chemical substances by application Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 238000004519 manufacturing process Methods 0.000 claims description 29
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 24
- 239000011651 chromium Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910052804 chromium Inorganic materials 0.000 claims description 22
- 238000010894 electron beam technology Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 6
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 238000002309 gasification Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims description 2
- UYVZCGGFTICJMW-UHFFFAOYSA-N [Ir].[Au] Chemical compound [Ir].[Au] UYVZCGGFTICJMW-UHFFFAOYSA-N 0.000 claims 1
- 230000002929 anti-fatigue Effects 0.000 claims 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000835 fiber Substances 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 238000010079 rubber tapping Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 239000011521 glass Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 8
- 238000007689 inspection Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000004075 cariostatic agent Substances 0.000 description 2
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- 102100038954 60S ribosomal export protein NMD3 Human genes 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 101000603190 Homo sapiens 60S ribosomal export protein NMD3 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010029412 Nightmare Diseases 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000675 anti-caries Effects 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 230000002609 anti-worm Effects 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 210000001624 hip Anatomy 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002917 insecticide Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- -1 oxidized group Chemical compound 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- NRHFWOJROOQKBK-UHFFFAOYSA-N triphenyltin;hydrate Chemical compound O.C1=CC=CC=C1[Sn](C=1C=CC=CC=1)C1=CC=CC=C1 NRHFWOJROOQKBK-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004342782A JP4339232B2 (ja) | 2004-11-26 | 2004-11-26 | アクテイブマトリクス型表示装置用フォトマスク及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200632539A TW200632539A (en) | 2006-09-16 |
| TWI311686B true TWI311686B (https=) | 2009-07-01 |
Family
ID=36632536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094141434A TW200632539A (en) | 2004-11-26 | 2005-11-25 | Photomask for display device of active matrix type and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4339232B2 (https=) |
| KR (1) | KR100744705B1 (https=) |
| TW (1) | TW200632539A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273827A (ja) * | 2006-03-31 | 2007-10-18 | Tokyo Electron Ltd | リフロー方法、パターン形成方法および液晶表示装置用ｔｆｔ素子の製造方法 |
| JP5105407B2 (ja) * | 2007-03-30 | 2012-12-26 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
| JP2008311250A (ja) * | 2007-06-12 | 2008-12-25 | Tokyo Electron Ltd | リフローシステムおよびリフロー方法 |
| JP5429590B2 (ja) * | 2007-07-10 | 2014-02-26 | Ｎｌｔテクノロジー株式会社 | ハーフトーンマスク |
| KR101242625B1 (ko) | 2007-11-01 | 2013-03-19 | 알박 세이마쿠 가부시키가이샤 | 하프톤 마스크, 하프톤 마스크 블랭크 및 하프톤 마스크의 제조 방법 |
| WO2009130746A1 (ja) * | 2008-04-22 | 2009-10-29 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
| WO2011086905A1 (ja) * | 2010-01-13 | 2011-07-21 | シャープ株式会社 | アクティブマトリクス基板及びその製造方法 |
| KR20140101817A (ko) * | 2011-12-02 | 2014-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102756671B1 (ko) | 2019-02-21 | 2025-01-17 | 삼성디스플레이 주식회사 | 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0651492A (ja) * | 1992-07-31 | 1994-02-25 | Nec Corp | 位相シフトマスク及びその製造方法 |
| JPH0749410A (ja) * | 1993-08-06 | 1995-02-21 | Dainippon Printing Co Ltd | 階調マスク及びその製造方法 |
| JPH07134396A (ja) * | 1993-11-08 | 1995-05-23 | Fujitsu Ltd | 露光用マスク及びその製造方法 |
| JPH08123010A (ja) * | 1994-10-28 | 1996-05-17 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるマスクブランク |
| JPH11327121A (ja) * | 1998-05-20 | 1999-11-26 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク |
| JP3253590B2 (ja) * | 1998-08-31 | 2002-02-04 | シャープ株式会社 | ハーフトーンマスクの製造方法 |
| JP2000181048A (ja) * | 1998-12-16 | 2000-06-30 | Sharp Corp | フォトマスクおよびその製造方法、並びにそれを用いた露光方法 |
| JP4686006B2 (ja) * | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
| JP3616584B2 (ja) * | 2000-06-12 | 2005-02-02 | 鹿児島日本電気株式会社 | パターン形成方法及びそれを用いた表示装置の製造方法 |
| JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
| JP2004085759A (ja) * | 2002-08-26 | 2004-03-18 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク |
| JP2004140239A (ja) * | 2002-10-18 | 2004-05-13 | Dainippon Screen Mfg Co Ltd | 薄膜除去装置および薄膜除去方法 |
| JP4651929B2 (ja) * | 2002-11-15 | 2011-03-16 | Ｎｅｃ液晶テクノロジー株式会社 | 液晶表示装置の製造方法 |
| JP2006078727A (ja) * | 2004-09-09 | 2006-03-23 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクの製造方法 |
-
2004
- 2004-11-26 JP JP2004342782A patent/JP4339232B2/ja not_active Expired - Fee Related
-
2005
- 2005-11-25 KR KR1020050113214A patent/KR100744705B1/ko not_active Expired - Fee Related
- 2005-11-25 TW TW094141434A patent/TW200632539A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200632539A (en) | 2006-09-16 |
| KR100744705B1 (ko) | 2007-08-02 |
| KR20060059194A (ko) | 2006-06-01 |
| JP2006154122A (ja) | 2006-06-15 |
| JP4339232B2 (ja) | 2009-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |