KR100744705B1 - 액티브 매트릭스형 표시장치용 포토마스크 및 그 제조방법 - Google Patents

액티브 매트릭스형 표시장치용 포토마스크 및 그 제조방법 Download PDF

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KR100744705B1
KR100744705B1 KR1020050113214A KR20050113214A KR100744705B1 KR 100744705 B1 KR100744705 B1 KR 100744705B1 KR 1020050113214 A KR1020050113214 A KR 1020050113214A KR 20050113214 A KR20050113214 A KR 20050113214A KR 100744705 B1 KR100744705 B1 KR 100744705B1
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South Korea
Prior art keywords
film
resist
photomask
pattern
chromium
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KR1020050113214A
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English (en)
Korean (ko)
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KR20060059194A (ko
Inventor
미쓰아사 다카하시
요이치 무라야마
히로시 모리
아쓰시 도비타
마사미 구니요시
기요히토 반
슈사쿠 기도
Original Assignee
엔이씨 엘씨디 테크놀로지스, 엘티디.
다이니폰 인사츠 가부시키가이샤
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Application filed by 엔이씨 엘씨디 테크놀로지스, 엘티디., 다이니폰 인사츠 가부시키가이샤 filed Critical 엔이씨 엘씨디 테크놀로지스, 엘티디.
Publication of KR20060059194A publication Critical patent/KR20060059194A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050113214A 2004-11-26 2005-11-25 액티브 매트릭스형 표시장치용 포토마스크 및 그 제조방법 Expired - Fee Related KR100744705B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00342782 2004-11-26
JP2004342782A JP4339232B2 (ja) 2004-11-26 2004-11-26 アクテイブマトリクス型表示装置用フォトマスク及びその製造方法

Publications (2)

Publication Number Publication Date
KR20060059194A KR20060059194A (ko) 2006-06-01
KR100744705B1 true KR100744705B1 (ko) 2007-08-02

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ID=36632536

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KR1020050113214A Expired - Fee Related KR100744705B1 (ko) 2004-11-26 2005-11-25 액티브 매트릭스형 표시장치용 포토마스크 및 그 제조방법

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Country Link
JP (1) JP4339232B2 (https=)
KR (1) KR100744705B1 (https=)
TW (1) TW200632539A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273827A (ja) * 2006-03-31 2007-10-18 Tokyo Electron Ltd リフロー方法、パターン形成方法および液晶表示装置用ｔｆｔ素子の製造方法
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
JP2008311250A (ja) * 2007-06-12 2008-12-25 Tokyo Electron Ltd リフローシステムおよびリフロー方法
JP5429590B2 (ja) * 2007-07-10 2014-02-26 Ｎｌｔテクノロジー株式会社 ハーフトーンマスク
KR101242625B1 (ko) 2007-11-01 2013-03-19 알박 세이마쿠 가부시키가이샤 하프톤 마스크, 하프톤 마스크 블랭크 및 하프톤 마스크의 제조 방법
WO2009130746A1 (ja) * 2008-04-22 2009-10-29 シャープ株式会社 薄膜トランジスタ基板の製造方法
WO2011086905A1 (ja) * 2010-01-13 2011-07-21 シャープ株式会社 アクティブマトリクス基板及びその製造方法
KR20140101817A (ko) * 2011-12-02 2014-08-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102756671B1 (ko) 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11327121A (ja) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク
JP2000075466A (ja) * 1998-08-31 2000-03-14 Sharp Corp ハーフトーンマスクの製造方法
JP2001312043A (ja) * 2000-04-27 2001-11-09 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
JP2004085759A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0651492A (ja) * 1992-07-31 1994-02-25 Nec Corp 位相シフトマスク及びその製造方法
JPH0749410A (ja) * 1993-08-06 1995-02-21 Dainippon Printing Co Ltd 階調マスク及びその製造方法
JPH07134396A (ja) * 1993-11-08 1995-05-23 Fujitsu Ltd 露光用マスク及びその製造方法
JPH08123010A (ja) * 1994-10-28 1996-05-17 Toppan Printing Co Ltd 位相シフトマスクおよびそれに用いるマスクブランク
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2004140239A (ja) * 2002-10-18 2004-05-13 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
JP4651929B2 (ja) * 2002-11-15 2011-03-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
JP2006078727A (ja) * 2004-09-09 2006-03-23 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11327121A (ja) * 1998-05-20 1999-11-26 Toppan Printing Co Ltd ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク
JP2000075466A (ja) * 1998-08-31 2000-03-14 Sharp Corp ハーフトーンマスクの製造方法
JP2001312043A (ja) * 2000-04-27 2001-11-09 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びハーフトーン位相シフトフォトマスク用ブランクス
JP2004085759A (ja) * 2002-08-26 2004-03-18 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク

Also Published As

Publication number Publication date
TW200632539A (en) 2006-09-16
KR20060059194A (ko) 2006-06-01
TWI311686B (https=) 2009-07-01
JP2006154122A (ja) 2006-06-15
JP4339232B2 (ja) 2009-10-07

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