TWI305383B - Method for fabricating a nitrided silicon-oxide gate dielectric - Google Patents

Method for fabricating a nitrided silicon-oxide gate dielectric Download PDF

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Publication number
TWI305383B
TWI305383B TW093125245A TW93125245A TWI305383B TW I305383 B TWI305383 B TW I305383B TW 093125245 A TW093125245 A TW 093125245A TW 93125245 A TW93125245 A TW 93125245A TW I305383 B TWI305383 B TW I305383B
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TW
Taiwan
Prior art keywords
nitrogen
layer
gas
substrate
mixture
Prior art date
Application number
TW093125245A
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English (en)
Chinese (zh)
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TW200514164A (en
Inventor
Jay S Burnham
James S Nakos
James J Quinlivan
Bernie Roque Jr
Steven M Shank
Beth A Ward
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Ibm
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Publication of TW200514164A publication Critical patent/TW200514164A/zh
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Publication of TWI305383B publication Critical patent/TWI305383B/zh

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    • H10P14/60—
    • H10P14/6927—
    • H10D64/01344—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H10P10/00—
    • H10P14/6526—
    • H10P14/6532—
    • H10D64/01306—
    • H10P14/6336—
    • H10P14/69433—

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW093125245A 2003-08-26 2004-08-20 Method for fabricating a nitrided silicon-oxide gate dielectric TWI305383B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/604,905 US7291568B2 (en) 2003-08-26 2003-08-26 Method for fabricating a nitrided silicon-oxide gate dielectric

Publications (2)

Publication Number Publication Date
TW200514164A TW200514164A (en) 2005-04-16
TWI305383B true TWI305383B (en) 2009-01-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125245A TWI305383B (en) 2003-08-26 2004-08-20 Method for fabricating a nitrided silicon-oxide gate dielectric

Country Status (7)

Country Link
US (2) US7291568B2 (enExample)
EP (1) EP1661163A4 (enExample)
JP (1) JP4617306B2 (enExample)
KR (1) KR100843496B1 (enExample)
CN (1) CN1894781B (enExample)
TW (1) TWI305383B (enExample)
WO (1) WO2005020291A2 (enExample)

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Also Published As

Publication number Publication date
TW200514164A (en) 2005-04-16
CN1894781B (zh) 2010-05-05
US8709887B2 (en) 2014-04-29
KR100843496B1 (ko) 2008-07-04
WO2005020291A3 (en) 2006-05-18
EP1661163A2 (en) 2006-05-31
WO2005020291A2 (en) 2005-03-03
JP4617306B2 (ja) 2011-01-26
EP1661163A4 (en) 2008-08-06
JP2007504652A (ja) 2007-03-01
CN1894781A (zh) 2007-01-10
US7291568B2 (en) 2007-11-06
US20050048705A1 (en) 2005-03-03
KR20060066069A (ko) 2006-06-15
US20080014692A1 (en) 2008-01-17

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