TWI260776B - Epitaxially deposited source/drain - Google Patents
Epitaxially deposited source/drain Download PDFInfo
- Publication number
- TWI260776B TWI260776B TW093132256A TW93132256A TWI260776B TW I260776 B TWI260776 B TW I260776B TW 093132256 A TW093132256 A TW 093132256A TW 93132256 A TW93132256 A TW 93132256A TW I260776 B TWI260776 B TW I260776B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate electrode
- transistor
- source
- forming
- thickness
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 230000005669 field effect Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 31
- 125000006850 spacer group Chemical group 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910052770 Uranium Inorganic materials 0.000 claims description 4
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 claims 3
- 229910001347 Stellite Inorganic materials 0.000 claims 2
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/692,696 US7060576B2 (en) | 2003-10-24 | 2003-10-24 | Epitaxially deposited source/drain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200515596A TW200515596A (en) | 2005-05-01 |
| TWI260776B true TWI260776B (en) | 2006-08-21 |
Family
ID=34522194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132256A TWI260776B (en) | 2003-10-24 | 2004-10-22 | Epitaxially deposited source/drain |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7060576B2 (de) |
| KR (1) | KR100841806B1 (de) |
| CN (1) | CN1898785B (de) |
| DE (1) | DE112004002017B4 (de) |
| TW (1) | TWI260776B (de) |
| WO (1) | WO2005041288A1 (de) |
Families Citing this family (73)
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| TWI463526B (zh) * | 2004-06-24 | 2014-12-01 | Ibm | 改良具應力矽之ｃｍｏｓ元件的方法及以該方法製備而成的元件 |
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| US7332439B2 (en) * | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
| US7247535B2 (en) * | 2004-09-30 | 2007-07-24 | Texas Instruments Incorporated | Source/drain extensions having highly activated and extremely abrupt junctions |
| US20060151808A1 (en) * | 2005-01-12 | 2006-07-13 | Chien-Hao Chen | MOSFET device with localized stressor |
| JP4984665B2 (ja) * | 2005-06-22 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US7579617B2 (en) * | 2005-06-22 | 2009-08-25 | Fujitsu Microelectronics Limited | Semiconductor device and production method thereof |
| US7494858B2 (en) * | 2005-06-30 | 2009-02-24 | Intel Corporation | Transistor with improved tip profile and method of manufacture thereof |
| US7525160B2 (en) * | 2005-12-27 | 2009-04-28 | Intel Corporation | Multigate device with recessed strain regions |
| KR100764058B1 (ko) * | 2006-09-20 | 2007-10-09 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 형성방법 |
| US7943456B2 (en) * | 2008-12-31 | 2011-05-17 | Texas Instruments Incorporated | Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefrom |
| US9318571B2 (en) * | 2009-02-23 | 2016-04-19 | United Microelectronics Corp. | Gate structure and method for trimming spacers |
| US8129247B2 (en) | 2009-12-04 | 2012-03-06 | International Business Machines Corporation | Omega shaped nanowire field effect transistors |
| US8143113B2 (en) * | 2009-12-04 | 2012-03-27 | International Business Machines Corporation | Omega shaped nanowire tunnel field effect transistors fabrication |
| US8455334B2 (en) | 2009-12-04 | 2013-06-04 | International Business Machines Corporation | Planar and nanowire field effect transistors |
| US8722492B2 (en) * | 2010-01-08 | 2014-05-13 | International Business Machines Corporation | Nanowire pin tunnel field effect devices |
| US8324940B2 (en) | 2010-04-13 | 2012-12-04 | International Business Machines Corporation | Nanowire circuits in matched devices |
| US8361907B2 (en) | 2010-05-10 | 2013-01-29 | International Business Machines Corporation | Directionally etched nanowire field effect transistors |
| US8324030B2 (en) | 2010-05-12 | 2012-12-04 | International Business Machines Corporation | Nanowire tunnel field effect transistors |
| US8835231B2 (en) | 2010-08-16 | 2014-09-16 | International Business Machines Corporation | Methods of forming contacts for nanowire field effect transistors |
| US8536563B2 (en) | 2010-09-17 | 2013-09-17 | International Business Machines Corporation | Nanowire field effect transistors |
| US20120126341A1 (en) * | 2010-11-23 | 2012-05-24 | Microchip Technology Incorporated | Using low pressure epi to enable low rdson fet |
| US8901537B2 (en) | 2010-12-21 | 2014-12-02 | Intel Corporation | Transistors with high concentration of boron doped germanium |
| US9484432B2 (en) | 2010-12-21 | 2016-11-01 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
| US8466502B2 (en) | 2011-03-24 | 2013-06-18 | United Microelectronics Corp. | Metal-gate CMOS device |
| US8445363B2 (en) | 2011-04-21 | 2013-05-21 | United Microelectronics Corp. | Method of fabricating an epitaxial layer |
| US8324059B2 (en) | 2011-04-25 | 2012-12-04 | United Microelectronics Corp. | Method of fabricating a semiconductor structure |
| US8426284B2 (en) | 2011-05-11 | 2013-04-23 | United Microelectronics Corp. | Manufacturing method for semiconductor structure |
| US8481391B2 (en) | 2011-05-18 | 2013-07-09 | United Microelectronics Corp. | Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure |
| US8431460B2 (en) | 2011-05-27 | 2013-04-30 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| CN102891176B (zh) * | 2011-07-19 | 2016-06-01 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
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| CN102891178A (zh) | 2011-07-19 | 2013-01-23 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
| CN102891175B (zh) * | 2011-07-19 | 2016-03-16 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
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| US8476169B2 (en) | 2011-10-17 | 2013-07-02 | United Microelectronics Corp. | Method of making strained silicon channel semiconductor structure |
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| US8647953B2 (en) | 2011-11-17 | 2014-02-11 | United Microelectronics Corp. | Method for fabricating first and second epitaxial cap layers |
| US8709930B2 (en) | 2011-11-25 | 2014-04-29 | United Microelectronics Corp. | Semiconductor process |
| CN103247530B (zh) * | 2012-02-10 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制作方法 |
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| CN103578987B (zh) * | 2012-07-19 | 2016-08-24 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
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| US9117925B2 (en) | 2013-01-31 | 2015-08-25 | United Microelectronics Corp. | Epitaxial process |
| US8753902B1 (en) | 2013-03-13 | 2014-06-17 | United Microelectronics Corp. | Method of controlling etching process for forming epitaxial structure |
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| US8765546B1 (en) | 2013-06-24 | 2014-07-01 | United Microelectronics Corp. | Method for fabricating fin-shaped field-effect transistor |
| US9412842B2 (en) | 2013-07-03 | 2016-08-09 | Samsung Electronics Co., Ltd. | Method for fabricating semiconductor device |
| US8895396B1 (en) | 2013-07-11 | 2014-11-25 | United Microelectronics Corp. | Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures |
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| US9831341B2 (en) * | 2014-06-16 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for integrated circuit |
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| US20160056261A1 (en) * | 2014-08-22 | 2016-02-25 | Globalfoundries Inc. | Embedded sigma-shaped semiconductor alloys formed in transistors |
| KR102326316B1 (ko) * | 2015-04-10 | 2021-11-16 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US9805989B1 (en) | 2016-09-22 | 2017-10-31 | International Business Machines Corporation | Sacrificial cap for forming semiconductor contact |
| US11621325B2 (en) * | 2019-03-28 | 2023-04-04 | Intel Corporation | Source or drain structures with low resistivity |
| CN112582476B (zh) * | 2020-12-09 | 2022-05-06 | 全芯智造技术有限公司 | 半导体器件及其形成方法 |
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-
2003
- 2003-10-24 US US10/692,696 patent/US7060576B2/en not_active Expired - Lifetime
-
2004
- 2004-10-22 KR KR1020067007495A patent/KR100841806B1/ko active IP Right Grant
- 2004-10-22 DE DE112004002017T patent/DE112004002017B4/de not_active Expired - Fee Related
- 2004-10-22 TW TW093132256A patent/TWI260776B/zh not_active IP Right Cessation
- 2004-10-22 CN CN2004800387396A patent/CN1898785B/zh not_active Expired - Fee Related
- 2004-10-22 WO PCT/US2004/035204 patent/WO2005041288A1/en active Application Filing
-
2006
- 2006-04-20 US US11/408,133 patent/US20060197164A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005041288A1 (en) | 2005-05-06 |
| KR20060060058A (ko) | 2006-06-02 |
| KR100841806B1 (ko) | 2008-06-26 |
| US20050087801A1 (en) | 2005-04-28 |
| CN1898785B (zh) | 2011-09-07 |
| US20060197164A1 (en) | 2006-09-07 |
| CN1898785A (zh) | 2007-01-17 |
| DE112004002017B4 (de) | 2009-03-05 |
| DE112004002017T5 (de) | 2006-08-31 |
| TW200515596A (en) | 2005-05-01 |
| US7060576B2 (en) | 2006-06-13 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |