KR20060060058A - 전계 효과 트랜지스터 및 그 제조 방법 - Google Patents
전계 효과 트랜지스터 및 그 제조 방법 Download PDFInfo
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- KR20060060058A KR20060060058A KR1020067007495A KR20067007495A KR20060060058A KR 20060060058 A KR20060060058 A KR 20060060058A KR 1020067007495 A KR1020067007495 A KR 1020067007495A KR 20067007495 A KR20067007495 A KR 20067007495A KR 20060060058 A KR20060060058 A KR 20060060058A
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- 239000000463 material Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000527 sonication Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- 238000005137 deposition process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (25)
- 게이트 전극의 에지부 아래에서 연장되는 에피택셜 방식으로 증착된 소스/드레인을 포함하는 금속 산화물 반도체 전계 효과 트랜지스터를 형성하는 단계를 포함하는방법.
- 제 1 항에 있어서,상기 게이트 전극의 에지부 아래에서 연장되는 소스/드레인 확장부를 형성하는 단계를 포함하는방법.
- 제 1 항에 있어서,기판 상에 에피택셜 방식으로 증착된 희생 재료를 형성하는 단계와,상기 에피택셜 방식으로 증착된 층 위에 게이트 전극을 형성하는 단계를 포함하는방법.
- 제 3 항에 있어서,상기 에피택셜 방식으로 증착된 희생 재료를 형성하는 단계는 실리콘 재료를 에피택셜 방식으로 증착하는 단계를 포함하는방법.
- 제 3 항에 있어서,상기 에피택셜 방식으로 증착된 재료를 선택적으로 에칭하는 단계를 포함하는방법.
- 제 5 항에 있어서,초음파 분해를 이용하여 상기 재료를 선택적으로 에칭하는 단계를 포함하는방법.
- 제 3 항에 있어서,상기 게이트 전극 상에 측벽 스페이서를 형성하는 단계와,상기 측벽 스페이서 아래를 에칭하는 단계를 포함하는방법.
- 제 5 항에 있어서,상기 에피택셜 방식으로 증착된 재료를 선택적으로 에칭하여 상기 게이트 전극을 언더컷(undercut)하는 단계를 포함하는방법.
- 제 8 항에 있어서,상기 기판 상에 에피택셜 재료를 증착하여 상기 게이트 전극 아래에서 연장시키는 단계를 포함하는방법.
- 제 9 항에 있어서,도핑된 에피택셜 재료를 형성하는 단계를 포함하는방법.
- 제 8 항에 있어서,상기 에피택셜 재료를, 상기 게이트 전극 근방에서 보다 얇게 형성하고, 상기 게이트 전극으로부터 이격된 부분에 보다 두껍게 형성하는 단계를 포함하는방법.
- 제 1 항에 있어서,델타 도핑형(delta doped) 트랜지스터를 형성하는 단계를 포함하는방법.
- 기판과,상기 기판 상에 형성된 도핑된 에피택셜 반도체 재료와,상기 도핑된 에피택셜 반도체 재료 상에 형성된 게이트 전극을 포함하고,상기 도핑된 에피택셜 반도체 재료는 상기 게이트 전극 아래에서 연장되는전계 효과 트랜지스터.
- 제 13 항에 있어서,소스/드레인 확장부를 포함하는 소스/드레인을 포함하고,상기 소스/드레인 확장부는 상기 도핑된 에피택셜 반도체 재료로 형성되며, 상기 게이트 전극의 에지부 아래에서 연장되는전계 효과 트랜지스터.
- 제 14 항에 있어서,상기 재료는 상기 게이트 전극 근방의 제 1 두께와, 상기 게이트 전극으로부터 이격된 부분의 제 2 두께를 가지며,상기 제 2 두께는 상기 제 1 두께보다 더 큰전계 효과 트랜지스터.
- 제 15 항에 있어서,측벽 스페이서를 포함하며,상기 재료는 상기 측벽 스페이서 아래에서 연장되는전계 효과 트랜지스터.
- 제 16 항에 있어서,상기 제 2 두께는 상기 측벽 스페이서와 정렬되는전계 효과 트랜지스터.
- 제 13 항에 있어서,상기 트랜지스터는 델타 도핑형 트랜지스터인전계 효과 트랜지스터.
- 제 13 항에 있어서,상기 도핑된 에피택셜 반도체 재료 아래에 이온 주입된 소스/드레인을 포함하는전계 효과 트랜지스터.
- 반도체 기판 상에 상기 기판보다 도핑 농도가 더 낮은 에피택셜 반도체 층을 형성하는 단계와,상기 에피택셜 반도체층 상에 게이트 전극 및 측벽 스페이서를 포함하는 게이트 구조물을 형성하는 단계와,상기 에피택셜 반도체층의 노출된 부분 및 상기 게이트 전극 아래의 상기 에 피택셜 반도체층의 일부를 선택적으로 에칭하는 단계를 포함하는방법.
- 제 20 항에 있어서,상기 기판 상에 도핑된 반도체 재료를 에피택셜 방식으로 증착하여 상기 게이트 전극 및 상기 측벽 스페이서 아래의 영역을 채우는방법.
- 제 21 항에 있어서,상기 에피택셜 반도체층은 상기 게이트 전극 아래의 제 1 두께와, 상기 게이트 전극으로부터 이격된 부분의 제 2 두께를 갖는방법.
- 제 22 항에 있어서,상기 제 2 두께를 상기 스페이서와 정렬되도록 형성하는 단계를 포함하는방법.
- 제 20 항에 있어서,이온 주입에 의해 깊은 소스/드레인 영역을 형성하는 단계를 포함하는방법.
- 제 20 항에 있어서,상기 게이트 전극 아래에서 연장되며, 상기 게이트 전극의 바깥쪽이 더 두껍고 상기 게이트 전극 아래의 두께가 더 얇은 상기 에피택셜 반도체층을 형성하는 단계를 포함하는방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/692,696 US7060576B2 (en) | 2003-10-24 | 2003-10-24 | Epitaxially deposited source/drain |
US10/692,696 | 2003-10-24 |
Publications (2)
Publication Number | Publication Date |
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KR20060060058A true KR20060060058A (ko) | 2006-06-02 |
KR100841806B1 KR100841806B1 (ko) | 2008-06-26 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020067007495A KR100841806B1 (ko) | 2003-10-24 | 2004-10-22 | 전계 효과 트랜지스터 및 그 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7060576B2 (ko) |
KR (1) | KR100841806B1 (ko) |
CN (1) | CN1898785B (ko) |
DE (1) | DE112004002017B4 (ko) |
TW (1) | TWI260776B (ko) |
WO (1) | WO2005041288A1 (ko) |
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US20060197164A1 (en) | 2006-09-07 |
TWI260776B (en) | 2006-08-21 |
DE112004002017T5 (de) | 2006-08-31 |
US20050087801A1 (en) | 2005-04-28 |
CN1898785B (zh) | 2011-09-07 |
KR100841806B1 (ko) | 2008-06-26 |
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