TWI251621B - Thermal CVD of TaN films from tantalum halide precursors - Google Patents
Thermal CVD of TaN films from tantalum halide precursors Download PDFInfo
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- TWI251621B TWI251621B TW089107858A TW89107858A TWI251621B TW I251621 B TWI251621 B TW I251621B TW 089107858 A TW089107858 A TW 089107858A TW 89107858 A TW89107858 A TW 89107858A TW I251621 B TWI251621 B TW I251621B
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- precursor
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- tanx
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- 239000002243 precursor Substances 0.000 title claims abstract description 92
- -1 tantalum halide Chemical class 0.000 title claims abstract description 12
- 238000002230 thermal chemical vapour deposition Methods 0.000 title claims abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 41
- 229910004156 TaNx Inorganic materials 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 239000010949 copper Substances 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000012546 transfer Methods 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 claims 2
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical group F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 claims 2
- 230000000873 masking effect Effects 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical group Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 claims 1
- OHZZTXYKLXZFSZ-UHFFFAOYSA-I manganese(3+) 5,10,15-tris(1-methylpyridin-1-ium-4-yl)-20-(1-methylpyridin-4-ylidene)porphyrin-22-ide pentachloride Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Mn+3].C1=CN(C)C=CC1=C1C(C=C2)=NC2=C(C=2C=C[N+](C)=CC=2)C([N-]2)=CC=C2C(C=2C=C[N+](C)=CC=2)=C(C=C2)N=C2C(C=2C=C[N+](C)=CC=2)=C2N=C1C=C2 OHZZTXYKLXZFSZ-UHFFFAOYSA-I 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 4
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 abstract 2
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 abstract 1
- 239000010408 film Substances 0.000 description 62
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- 239000012159 carrier gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910004537 TaCl5 Inorganic materials 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000032258 transport Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000864 Auger spectrum Methods 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 101100425947 Mus musculus Tnfrsf13b gene Proteins 0.000 description 1
- 235000009827 Prunus armeniaca Nutrition 0.000 description 1
- 244000018633 Prunus armeniaca Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- HFGCNBNCMOCFCE-UHFFFAOYSA-I [F-].[F-].[F-].[F-].[F-].[Li+].[Li+].[Li+].[Li+].[Li+] Chemical compound [F-].[F-].[F-].[F-].[F-].[Li+].[Li+].[Li+].[Li+].[Li+] HFGCNBNCMOCFCE-UHFFFAOYSA-I 0.000 description 1
- HDTQJYJXQIDRPA-UHFFFAOYSA-I [I-].[I-].[I-].[I-].[I-].[Li+].[Li+].[Li+].[Li+].[Li+] Chemical compound [I-].[I-].[I-].[I-].[I-].[Li+].[Li+].[Li+].[Li+].[Li+] HDTQJYJXQIDRPA-UHFFFAOYSA-I 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- YIJAQNGGCTWHCQ-UHFFFAOYSA-I pentabromoruthenium Chemical compound [Ru](Br)(Br)(Br)(Br)Br YIJAQNGGCTWHCQ-UHFFFAOYSA-I 0.000 description 1
- GIDBEKINLBHYLA-UHFFFAOYSA-I pentachlororuthenium Chemical compound Cl[Ru](Cl)(Cl)(Cl)Cl GIDBEKINLBHYLA-UHFFFAOYSA-I 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000004094 preconcentration Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1251621
五 經濟部智慧財產局員工消費合作社印製 、發明說明( 範圍 本發明係關於積體電路板之形成作用,並特別是來自卣 化叙先質之氮化鈕薄膜之化學蒸氣澱積作用。 I塑背景 積體電路板(1C)提供在電設計中信號傳輸之路徑。在設 =^的1C由許多包含在半導體基板的矽底層中的活性晶 管組成的。爲了増加〗c容量,故在基板的矽底層中的 個活性印體管與在基板的梦底層中的另一個活性晶體管 I間進行與金屬 ''網線〃的大量交互連結。經由切入基板 <洞、道或溝進行電路板的交互連結,整體已知是金屬交 互連結。實際上與矽底層接觸之特殊的金屬連結點已知是 接觸點。洞、道或溝之其餘部份以稱爲接觸柱塞之導電物 處填充。因爲晶體管密度持續增加,形成較高層級的積體 電路板,接觸柱塞之直徑必須降低,以容許增加的交互連 結量、多層金屬化結構及較高的縱橫比。 已接受銘爲積體電路板的接觸及交互連結的標準。但 疋,其電遷移作用及其高電阻性問題使具有亞微細尺寸之 更新結構需要新物質。以銅約定成超大量積體電路(IJLSI) 中的下一代積體電路板之交互連結物質,但是其在低溫下 的一矽化二銅(Cu-Si)的形成作用及其經由二氧化矽(si〇2) 之電遷移作用不利於其用途。 在發生選擇以銘轉成以銅爲交互連結元件時,則需要以 新物質具有當成阻擋物的作用,避免銅擴散至基板在下層 的介電層及形成後續的銅澱積有效的“黏膠,,層。新物質 本紙張尺度 + _家標準(CNS)A4規格(210 丨丨丨丨丨丨丨丨丨丨·丨—丨丨丨丨丨I丨丨——丨—丨- 0 (請先閱讀背面之注意事項再填寫本頁)
1251621 五、發明說明(3 ) 膠片表面上的微粒可能造成生產不良的半導體設計。 於疋,以熱CVD法澱積TaN之方法可能會在下一代的j c 提供有利的銅阻擋物形成作用。理想地是澱積薄膜將具有 高行走範圍(在部件底部之塗層厚度對部件側面上或鄰接 於々件之基板或乾膠片頂表面上之厚度比例)、好的擴散 阻擒物特性、少量雜質、低電阻係數及好的保形性(甚至 涵蓋高縱橫比部件之複雜地勢),並且理想上地是該方法 將具有高澱積速度。 冬發明的概诫 本發明專注於一種在基板上澱積來自卣化姮先質之氮化 叙(TaNx)薄膜之方法。將鹵化鉅先質以足以使先質蒸發之 溫度下傳送,以提供蒸氣壓力,使姮蒸氣傳送至含有基板 之反應室内。蒸氣壓力是至少約3托。將蒸氣與含有氮之 處理氣體組合,並將TaNx以熱化學蒸氣澱積法(C Vd )澱積 在基板上。卣化叙先質是氟化妲(TaF)、氯化鈕(TaCl)或 溴化妲(TaB〇,以五氟化鋰(TaF5)、五氣化鈕(TaCi5)或五 溴化妲(TaBr5)較佳。基板溫度是以約300°C-500°C爲範 圍。 本發明也專注於使先質溫度上升至足以使先質蒸發的方 式在基板上澱積來自TaF5或TaCl5先質之TaNx薄膜之方法。 將蒸氣與含有氮之處理氣體組合,並以熱CVD使TaN/薄 膜澱積。 本發明進一步係專注於不以載體氣體在基板上澱積來自 TaBr5先質之TaNx薄膜之方法。使先質溫度上升至足以產 - 6 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 1251621 A7 B7 五、發明說明( 鹵化鋰提供Ta及TaN熟知的無機來源。杜* ‘ 符疋1之,A 機先質是五鹵化銓(TaXy,在此X代表_化物氣: (C1)及溴(B〇。表1展示_化起先質相關的熱動態特性I 尤其是五氟化鈕(TaF5)、五氣化鈕(Tar丨、农’ 及五溴化銓 (TaBr5),以包含五碘化鋰(Tal5)做比較。τ ρ iaF5、TaCl5& TaBi*5先質物質在室溫下(18°C-22°C )全部是固能。 表1 先質 熔點 沸點 里成作用士教增以 TaF, 97〇C 230〇C -----π〈於,交 仟卡/莫耳 TaCl, 216〇C 242〇C --^205仟卡/莫耳 TaBr^ 265〇C 349〇C 一〜__143仟卡/莫耳 Tal, 367〇C 397〇C -82仟卡/莫耳
在化學蒸氣澱積法(CVD)中,或利用熱能或電能將氣體 先質活化。一旦活化之後,氣體先質會以化學方式反應形 成薄膜。在圖1中例證較佳的CVD方法,並揭示在由 Westendorp等人在與本專利申請案同日提出申請及指派於 東京電子有限公司(Tokyo Electron Limited )以將蒸氣由固 態來源傳送至化學蒸氣澱積室之裝置及方法(APPARATUS AND METHODS FOR DELIVERY OF VAPOR FROM SOLID (請先閱讀背面之注意事項再填寫本頁) 裝---------訂---- s 經濟部智慧財產局員工消費合作社印製 SOURCES TO A CVD CHAMBER)爲標題之共同審理之申 請案中,並將其全文併入本文以供參考。化學蒸氣澱積 (CVD)系統1 0包括C VD反應器1 1及先質傳送系統1 2。在 反應室1 1中進行反應,使先質氣體,例如,氯化鈕(TaCl) 或其它鹵化妲化合物轉化成薄膜,如鉅(Ta)或氮化鈀 -8- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) 1251621 A7 B7 五、發明說明(6 ) (TaNx)之阻擋層薄膜。未將TaN薄膜限制成特殊的計量化 學(TaNJ,因為以改變在任何既定的澱積作用中的氣體比 例可連續改變TaNx。因此,根據本文使用的TaNx&含任何 計量化學之氮化鈕薄膜。 先質傳送系統1 2包括具有氣體出口 1 4之先質氣體來源 1 3 ’將其經由具有氣體入口 1 6之計量系統1 5傳輸至CVD 反應室11中。來源13產生來自鹵化叙化合物之先質氣 體’例如,#化鈕蒸氣。化合物在標準溫度及壓力是一種 固體狀態。以控制在將產生預期的先質蒸氣壓力之溫度下 加熱的方式(較佳)維持先質來源。較佳地是蒸氣壓力是一 種其本身足以將先質蒸氣傳送至反應室n,不使用載體 氣體較佳。計量系統1 5維持來自來源1 3之先質氣體蒸氣 以足以維持在反應器丨丨中以商業方式能進行CVD法之速 度流入反應室1 1中。 反應室1 1是一種通常熟知的CVD反應器及包括以真空 壓迫式室壁21為邊界之真空室20。在室20中安置支撐基 板’如半導體乾膠片23之基板支撐物或受體22。將室20 維持在適合於將薄膜,如Ta/TaNx阻擋層沉積在半導體乾 膠片基板23上之CVD反應性能之真空下。CVD反應室1 1 較佳的壓力範圍是在從0 2-5 0托的範圍内。以控制真空泵 2 4及包括傳送系統丨2和也包括在進行姮還原反應中使用 的例如氫(H2)、氮(N2)或氨(NH3)之還原氣體來源2 6與如 氬氣(Ar)或氦氣(He)之類的氣體之惰性氣體來源27之入 口氣體來源2 5等的操作維持真空。將來自來源2 5之氣體 -9 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) _ a n «n n til an ·1 n ^ 騰 aam ami· 1·^ SI. 經濟部智慧財產局員工消費合作社印製 1251621
發明說明( 經濟部智慧財產局員工消費合作社印製 傳送系統12未受限於直接傳送先質4〇,可在替換方式 中用於一起傳送先質40與來自氣體來源39可引入容器^ ,載體氣體。這樣的氣體可以是氫氣(h2)或惰性氣體,如 氦=(He)或氬氣(Ar)。在利用载體氣體之處,可將其引 入容器31中,以便於分布於先質塊4〇的整個頂端表面 士,或可將其引入容器31中,以便於經由先質塊4〇自容 杏3 1底部3 5向上擴散滲透,以達到先質塊* 〇以最大的表 面%曝路於載體氣體。還有另一種替換方式是將容器h 中的液體蒸發。但是,這些替換方式加入不希望的微粒及 不提供以直接傳送先質達到的控制的傳送速度,即不利用 載體氣體傳送。因此,以直接傳送先質較佳。 為了維持在容器3 1中的先質4 0溫度,則將壁3 3的底部 3 5、’隹持與加熱器4 4的熱傳輸,以維持先質4 〇在受控制 /盟度下,以大於其熔點較佳,其會在缺少載體氣體下( 直接傳送系統)產生大於約3托之蒸氣壓力,並在利用 體氣體時會產生較低的蒸氣壓力,如約丨托。確實的蒸 壓力係根據其它變異而定,如載體氣體量、基板2 3的 面積等。在妲的直接傳送系統中,將_化妲先質在95 至2 〇 5。(:的範圍内加熱,可將蒸氣壓力維持在5托或以一 的較佳的壓力,如在圖2中的展示。關於Tax5,則對TaF 的預期溫度是至少約9 5它,對TaC15的預期溫度是至少约 1 4 5 C及對TaBh的預期溫度是至少約2 〇 5 °C。五氟化鋰、五氯化赵及五溴化姮等各自的熔點是在9 7它至2 6 5它的箣 圍内。五硤化叙(Tal5)需要更高的溫度,以便於在容器 -11 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 的 即 氣 表 V 上 3 1 i Γ . . --------- ^--------- (請先閱讀背面之注意事項再填寫本頁} 1251621 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(9) 中產生足夠的蒸氣壓力。溫度不應該高至造成噴射頭2 8 中的氣體過早反應或另外在與乾膠片23接觸之前。 就實施例的目的而言,採取180°C的溫度是供加熱容器 3 1底部的控制溫度。該溫度適合於以四碘化妞(TiIj產生 預期的蒸氣壓力。在容器3 1底部3 5提供該溫度,以避免 先質悉氣在容器31壁33及蓋子36上濃縮,以熱接觸蓋子 3 6外側之單獨的受控制加熱器4 5使蓋子維持在比在壁3 3 底部35的加熱器44高的溫度,例如,190。(:。以容納在 室壁3 3與環繞於同心圓外鋁壁或罐4 7之間的環狀凹陷的 it氣間隔4 6環繞室壁3 3側面。將罐4 7再以碎自同泡棉絕緣 物4 8環狀層環繞。在溫度範圍介於j 8 〇 t至丨9 〇。〇及壓力 大於約3托(以大於5托較佳)之預期實施例中,維持排列 的該溫度會維持蒸氣在以蓋子36、壁33側面及先質塊4〇 表面42爲邊界之容器31體積内。適合於維持預期壓力之 /m度會卩过主要包含成爲备或自化备化合物之先質物質改 變。 瘵氣流動計量系統1 5包括至少1 / 2英吋直徑或至少J 〇毫 米内直徑之傳送管5 〇,並以更大較佳,以便於在預期的 流動速度下提供不會有任何壓力降,其具有每分鐘至少約 2至40標準立方公分(sccm)。傳送管5〇會自先質氣體來 源1 3 (以其上游末端連接至出口 j 4)延伸至反應器工丨(以 其下游末端連接至入口16)。也將自蒸發器入口 14至反應 器入口 16之整個傳送管5〇長度與反應器室2〇之喷射頭28 以大於先質物質40之蒸發溫度加熱較佳,例如,加熱至 ^--------^--------- (請先閱讀背面之注意事項再填寫本頁) -12-
1251621
經濟部智慧財產局員工消費合作社印製 1 9 5 C。 在傳送管5 0中提供位圓3丨$,占 π丨,、uw孔5 2中央之擋板5 1,其以具 有約0 . 0 8 9英叶宣輕赫社。,、,仏必, 季义佳 以&制閥5 3調節自表1 5 6至 表2 5 7之壓力卩牛在技制閥5 3之後經過圓孔5 2及進入反 應室11之該壓力降大於約1()毫&,並將與流動速度成比 例。在介於蒸發器13出口 14與控制閥53之間的線50中提 供關閉閥5 4,以關閉蒸發器i 3容器3 1。 在系統1 0中提供壓力感應器5 5 _ 5 8,以提供訊息至用於 控制系統1 0之控制器6 0,其包括控制自傳送系統i 5至 CVD反應器11之室2〇内的先質氣體流動速度。壓力感應 器包括連接至介於蒸發器丨3出口 i 4與關閉閥5 4之間的傳 送管50之感應器55,以監控在蒸發容器31中的壓力。將 壓力感應器5 6連接至介於控制閥5 3與擋板5丨之間的傳送 管50,以監控圓孔52之上游壓力,同時將壓力感應器57 連接至介於擋板51與反應器入口 16之間的傳送管5〇,以 監控圓孔52之下游壓力。將另一個壓力感應器58連接至 反應室11之室20,以監控在CVD室20中的壓力。 以回應由感應器5 5 - 5 8感應之壓力之控制器6 〇達到控制 進入反應室1 1之CVD室20之先質蒸氣流動,特別是決定 越過圓孔52之壓力降之感應器56及57。在使得經過圓孔 52之先質蒸氣流動不會抗流動之條件時,則經由傳送管52 之實際壓力蒸氣流動是由壓力感應器56及57監控之壓力 的功能,並可自在圓孔5 2的上游侧面上之感應器5 6測量 之壓力對在圓孔5 2的下游侧面上之感應器5 7測量之壓力 -13- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) . I I--I · I---I--訂·-------- (請先閱讀背面之注音?事項再填寫本頁) 1251621 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(11) 比測定。 在使得經過圓孔5 2之先質蒸氣流動會抗流動之條件 時’則經由傳送管:5 2之眞實的壓力蒸氣流動只是由壓力 感應器5 7監控之壓力的功能。在任何實況中,以處理條 件况明I控制器6 〇可測定存在的抗流動或非抗流動。在 以控制器進行測定時,可經由計算的控制器6 〇測定先質 氣體的流動速度。 較佳地是自貯存在以控制器6 〇取得的不易變記憶體6 1 中I查詢表或擴程表之訂正之流動速度數據計算先質氣體 眞實的流動速度。在測定先質氣體眞實的流動速度時,以 一或數個可變圓孔控制閥5 3之密閉線圈回饋控制、經由 抽空泵2 4或控制降低來自來源2 6及2 7之惰性氣體之CVD 主壓力或以控制由加熱器44,45控制之室3 1内先質氣體 之蒸氣壓力可維持預期的流動速度。 根據圖1的展示,將固態Ta]p5、丁aC1# 丁沾“先質物質4 〇 密封在使先質物質表面積達到最大的圓筒狀抗腐蝕性金屬 容器31中。將來自或Tap5、Taci# TaBr5之蒸氣以高導電 傳送系統直接傳送至反應室i i内,即不利用載體氣體。 將反應室1 1加熱至至少約100。〇的溫度,以避免蒸氣濃縮 或副產物殿積。 將固態鹵化鈕先質40加熱至以約95°C-205°C爲範圍之溫 度(其選擇係根據特殊的先質而定),以完成將卣化鈒蒸氣 經控制直接傳送至反應室1 1内。溫度要足以使先質4 〇蒸 發’以提供將卣化鈕蒸氣傳送至室11内之蒸氣壓力。因 -14- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 丨丨丨丨丨丨丨丨丨丨 I i 111 — (請先閱讀背面之注意事項再填寫本頁) 1251621 經濟部智慧財產局員工消費合作社印製 A7 B7 12 五、發明說明() 此’不需要載體氣體。足夠的蒸氣壓力大於約3托。需要 以該壓力維持越過在高導電傳送系統中限定圓孔之固定壓 力降,同時在約0.12.0托為範圍的操作下將至多約5〇 seem之ί化妲先質傳送至反應室丨丨。為了在直接傳送系 統中獲得預期的壓力之溫度就TaF5而言是以約83-95 X:為 範圍(以約95°C較佳),就TaCL而言是以約130-15(TC為範 圍(以約145°C較佳)及就TaBh而言是以約202-218。(3為範圍 (以約205°C較佳)。在這些條件下,TaF5是液態,而TaCl5 及TaBr5維持固態。 圖2展示介於先質TaFs、TaCl5及TaBr5測得的蒸氣壓力與 溫度之間的關係,包含與Tal5的比較。根據先前的說明, 預期壓力大於約3托及以大於5托較佳。也根據先前的說 明,希望TaF5、TaCh及TaBr5的蒸氣壓力低至足以能夠在 缺少載體氣體下澱積妲,但仍足以維持越過在高導電傳送 系統中限定圓孔之固定壓力降及仍能夠在〇1-2.〇托的操作 下將至多50 seem之TaX5傳送至反應室1 1。關於在說明的 裝置中實際的工具而言,經測出之Tal5蒸氣壓力太低。關 於TaBi:5的空心圓代表已發表的數據,而關於TaBr5、 TaFs、TaCl5及TalW實心方塊代表發明者的實驗數據。 將選擇的TaX5蒸氣與在已加熱至溫度介於約3〇〇。〇500。〇 之基板上之氣(NH3)组合。也可以將氬氣(Ar)、氮氣 (N 2)、氫氣(H 2)及氦氣(He)以或單獨或組合方式當成處 理氣體使用。在表2中提供澱積高品質熱CVD氮化妲薄膜 之處理條件,在此s 1 m是每分鐘計之標準公升及w/cm2是 -15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ' I ^----------裝---------訂 -------- (請先閱讀背面之注意事項再填寫本頁} 1251621 A7 B7 13 五、發明說明( 每平方公分計之瓦特。 表2 羞·板溫度 300°C-500°C TaX5溫度 95〇C(TaF5) > 145〇C(TaCl5) ^ 205〇C(TaBr5) TaX5流動 1-50 seem Η 2流動 0-10 slm Ar,He流動 0-10 slm 處理壓力 0.2-5.0 托 1^113流動 0.1-10 slm N2流動 0-10 slm 在表3中提供利用本發明的方法就處理條件而言以TaF5 及TaBr5為主之熱CVD TaNj膜特性。自在2〇〇毫米si及 Si02基板上之 Ta(x)5 先質(TaF5 η==1〇,τα。n = 22)之
TaNx之殿積作用之間選擇代表性數據。此外,也澱積 Ta/TaNx雙層(TaF5 n = 3,TaBr5 n=l)。根據在表3中陳列 的殿積之TaNx薄膜特性具有介於土 20%整個乾膠片之均勾 性0 (請先閱讀背面之注意事項再填寫本頁) 裝----:----訂---- #· 經濟部智慧財產局員工消費合作社印製 -16- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) 1251621 A7 _____B7 14 五、發明說明() 表3 薄膜 先質 TaX5 NH3 壓力 溫度 澱積速度 電阻係數 ---======= 行走範園 鹵素 流動 流動 (托) (°C) (埃/分鐘) (微歐姆 濃度 (seem) (slm) 公分) ~===== TaN TaFs 6 1 0.3 415 _ 850 >1 X 107 <2 TaN IaFi_ 10 1 0.3 415 1000 7xl06 — ---1-- <2 TaN TaFs 28 1 0.3 415 1115 4xl05 1 —-土- TaN TaBr^ 10 1 1 425 200 >1 x 107 0.6 — --- — 根據本發明的方法澱積之薄膜對〗C形成作用表現出特徵 重要性。薄膜對低的交互連結電阻具有足夠低的電阻性 (小於1000微歐姆公分,並以小於5 00微歐姆公分較佳), 並且薄膜具有好的保形性及好的行走範圍(大於〇 3)。此 外,雜質量是低的(小於2原子%)。而且,沉積速度具有 充份的物料通過量考慮(大於1 0 0埃/分鐘)及處理採用低 乾膠片溫度(小於450°C ),並因此可與在設計内使用的其 它薄膜物質相容,包括具有介電常於比以〇2低的物質。 在415C的溫度、0.3托的壓力及1·〇 sim之]SfH3流動下, (請先閱讀背面之注意事項再填寫本頁) .裝------—訂--- 經濟部智慧財產局員工消費合作社印製 利用6 sccm流動之TaF5先質澱積之TaNx薄膜具有大於約 1 X 107微歐姆公分之電阻係數。在這些條件下,殿積速度 是850埃/分鐘及行走範圍是〇·2。當TaF5先質流動增加至 10 seem時,並且溫度維持在415<t,壓力維持在〇 3托及 NHyjiL動維持在1 .〇 sim時,則電阻係數會降低至7 X 1〇6微 歐姆公分。在10 sccm之該TaF5流動下,澱積速度會降至 -17- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 1251621 經濟部智慧財產局員工消費合作社印製 A7 B7 15 五、發明說明() 1000埃/分鐘及行走範圍會增加至i. 〇。當Ta]p5先質流動進 一步增加至28 seem時,並且溫度維持在415°C,壓力維持 在〇 . 3托及NH3流動維持在1.〇 時,則電阻係數會降低 至4 X 1〇5微歐姆公分。在28 seem之該TaF5流動下,澱積速 度會增加至1115埃/分鐘及行走範圍會維持在丨〇。在425 °C的溫度,1 · 〇托的壓力及丨〇 slm之NH 3流動下,利用 10 seem流動之TaBr5先質澱積之TaN薄膜具有大於約1 x 1〇7微歐姆公分之電阻係數。在這些條件下,澱積速度是 200埃/分鐘及行走範圍是〇6。 將獲得根據本發明的熱CVD澱積的丁&\薄膜之掃描式電 子顯微照像(SEM),並展示在圖3_4中。圖3是利用TaF5 當成先質之TaNx薄膜之SEM,圖4是利用丁&31:5當成先質 之TaNx薄膜之SEM。 圖3-4展示具有Tab及τα。的代表性底部行走範圍與侧 壁範圍以3 : 1縱橫比結構。行走範圍代表以在部件底部上 的薄膜厚度除以鄰接於部件之基板表面上的薄膜厚度(也 稱為場地)。根據在圖3的展示,具有6 sccmiTaF5流動之 TaF5先質TaNx薄膜之行走範圍是〇 · 2。當TaF5流動增加至 或10 seem或28 seem及同時溫度維持在415 °C時,則行走 範圍會增加至1 · 〇。在10 sccm的TaBi:5流動及425°C的溫度 下,則TaBh先質TaN薄膜之行走範圍是〇 6。以Tah為^ 之TaNx薄膜出現具有比以丁』。為主之TaN薄膜更好的行 範圍。 根據圖3及圖4的展示,TaNx薄膜通常會表現出具有好的 --— 1 — — — — — — ·1111111 ^ . I------- (請先閱讀背面之注意事項再填寫本頁) -18-
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發明說明(16) 經濟部智慧財產局員工消費合作社印製 稠密形態學。以TaBi:5爲主之TaNx薄膜通常會表現出比 爲主之薄膜更平滑,TaF5爲主之薄膜表現出較粗棱。^據 利用Tab及TaBQ先質之其它薄膜的實驗,推測據本發: 澱積之以TaCh爲主之TaNx薄膜可能會得到介於以Ta~及
TaBq爲主之TaNx薄膜之間的中等行走範圍及薄膜形5能 學。 〜 測定本發明方法之Ta薄膜與銅之相容性。因爲事實上 T a薄膜具有整體性,即直接與銅接觸,在τ a澱積期間應 该會發生少量或沒有任何銅反應或銅浸蝕。將含有p VD 殿積的500埃氮化备層及以PVD澱積的2000埃銅層之“ 乾膠片放入反應室11内,以測試Ta與銅之相容性。利用 本發明的方法以或TaFs、TaCls或TaBr5先質在銅層頂端以 PECVD殿積丁a薄膜。 以俄歇電子光譜評估生成的薄膜。俄歇光譜的分析證實 在銅與TaNx層之間清潔的界面及少許擴散。分析也證實 在薄膜中存在的雜質量。在圖5中展示以TaBr5當成先質使 用’在Cu/TiN/Si堆積中的C u層上澱積TaNx薄膜之俄歇分 析光譜。圖5顯示TaNx薄膜具有豐富的氮(x>1〇),其與 在表3中展示的結果一致。預期N 2豐富之ΤαΝχ薄膜具有相 對的高電子電阻係數。圖5也展示在TaNx層與C u之間好的 銳利界面,其代表在TaN澱積期間有少量或沒有任何反應 或浸蝕。測出溴化物濃度小於2原子〇/0。 因此,已例證生產適合於以含有C u之I C交互連結元件 積體之南品質熱CVD TaN薄膜之方法。本方法以或TaF5、 -19- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------· I------^--------- (請先閱讀背面之注意事項再填寫本頁) 1251621 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(17)
TaCl5或TaBr5先質之蒸氣傳送為主。所有自三種先質生成 之TaNx薄膜證明合理的行走範圍、低殘留雜質濃度、充份 的高澱積速度及沒有C u之TaNxl蝕痕跡。在先質之中, 根據本發明的熱C V D澱積之以TaF5為主之丁3^^薄膜表現 最成功,因為高澱積速度及1 0 0 %行走範圍。
當然在申請書中展示及說明的本發明具體實施例只是使 本技藝熟練的發明者做為參考的具體實施例,並不是以此 做為限制。例如,可以PECVD澱積T a薄膜及可以PECVD 或電漿處理熱CVD澱積TaNx薄膜,如分別在自鹵化鈕先質 進行 Ta 薄膜之 PECVD (PECVD OF Ta FILMS FROM TANTALUM HALIDE PRECURSORS)、來自鹵 4 匕起先質之 TaN薄膜之電漿增強化學蒸氣澱積(PECVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS)及自鹵化鋰先 質進行的TaN薄膜之電漿處理熱CVD ( PLASMA TREATED THERMAL CVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS )中之揭示,全部是由 Hautala 及 Westendorp 發明及指定予東京電子有限公司,並且是與本專利申請案 同日提出申請之共同審理申請案,並特別將其全文併入本 文以供參考。而且,可以CVD及TaNx沉積Ta/TaNx雙層, 並可將其用於根據本發明之柱塞填充,如分別在來自鹵化 妲先質之CVD之積體妲及TaNx薄膜(INTEGRATION OF CVD Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS )及來自鹵化佳先質之CVD TaNx柱塞的形成 (CVD TaNx PLUG FORMATION FROM TANTALUM HALIDE -20- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 丨.----------裝-------訂--------- (請先閱讀背面之注意事項再填寫本頁) 1251621 A7 B7 五、發明說明(18) PRECURSORS),兩者係由Hautala及Westendorp發明及指定 予東京電子有限公司’並且是與本專利申請案同曰提出申 請之共同審理申請案及特別將其全文併入本文以供參考。 因此,可以不違背本發明的精神及以下的申請專利範圍下 進行或再分類這些具體實施例的各種變化、改良或替換。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -21 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- A8 B8 C8 08 12516以_號專利申請案 中文申請專利範圍替換本(93年丨月) 申請專利範圍 1. 一種在具有介於3 〇 〇 °c至5 0 0 °C範圍内之溫度的半導體 基板上澱積氮化钽(TaNx)遮蔽薄膜之方法,該方法包 括藉由將_化鈕先質加熱至足以使該先質蒸發之溫 度’以提供該選自五氟化姮及五氯化鈕所組成之群之 #化备先質蒸氣至含有該基板之反應室内,接著使該 洛氣與基本上由氮氣及一或多種氫、氬及氦所組成之 處理氣體結合,以熱化學蒸氣澱積(C VD )法將該TaNx 殿積在該基板上, 其中該鹵化鋰先質的傳送是在1-50 seem的範圍内, 其中該處理氣體係於0·1·10 slm的範圍内流動,及 其中該澱積發生在以0.2-5.0托為範圍之該室壓力下。 2·根據申請專利範圍第丨項之方法,其中提供該蒸氣係包 括產生於至少3托的壓力下之蒸氣。 3·根據申請專利範圍第2項之方法,其中該先質是五氟化 妲及該溫度是95 °C。 4·根據申請專利範圍第2項之方法,其中該·先質是五氯化 妲及該溫度是145°C。 5·根據申請專利範圍第1項之方法,其中該先質係加熱至 足以提供至少3托之函化鈕先質蒸氣壓力的溫度。 6·根據申請專利範圍第1項之方法,其中該處理氣體係包 含氫。 7·根據申請專利範圍第1項之方法,其中該處理氣體係氨 氣。 8.根據申請專利範圍第1項之方法,其中該薄膜是與該基 板的銅層整合。 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) AB c D 1251621 六、申請專利範圍 9. 根據申請專利範圍第1項之方法,其中該TaNx係以至少 1 0 0埃/分鐘的速度澱積。 10. 根據申請專利範圍第1項之方法,其中該基板包含具有 南縱橫比特徵之積體電路板。 11. 根據申請專利範圍第1項之方法,其中將該先質係於無 載體氣體存在下傳送至該反應室。 12. 根據申請專利範圍第1項之方法,其進一步包含接著以 鋰薄膜沉積該TaNx薄膜。 13. —種在具有介於300 °C至500 °C範圍内之溫度的半導體 基板上澱積氮化鋰(TaNx)遮蔽薄膜之方法,該方法包 含將鹵化妲先質之溫度上升至足以產生該先質蒸氣之 溫度、以提供至少3托之壓力以傳送該先質蒸氣,而將 選自五氟化钽及五氯化鈕所組成之群之自化钽先質於 無載體氣體下傳送至含有該基板之反應室内,及,將 該蒸氣基本上由氫及氮構成之與處理氣體結合,以熱 化學蒸氣澱積(C VD )法將該TaNx澱積在該基板上, 其中該上升溫度係低於可能造成該先質蒸氣與該處理 氣體之間反應的溫度。 14. 根據申請專利範圍第1 3項之方法,其中傳送該蒸氣之 壓力是至少5托。 15. 根據申請專利範圍第1 3項之方法,其中該先質是五氟 化鈕及該溫度是9 5 °C。 16. 根據申請專利範圍第1 3項之方法,其中該先質是五氯 化钽及該溫度是1 4 5 °C。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
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WO2000065123A1 (en) | 2000-11-02 |
KR20020010611A (ko) | 2002-02-04 |
JP2002543282A (ja) | 2002-12-17 |
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