TWI238174B - Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography - Google Patents
Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography Download PDFInfo
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- TWI238174B TWI238174B TW090117454A TW90117454A TWI238174B TW I238174 B TWI238174 B TW I238174B TW 090117454 A TW090117454 A TW 090117454A TW 90117454 A TW90117454 A TW 90117454A TW I238174 B TWI238174 B TW I238174B
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- absorbing
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 50
- 239000011521 glass Substances 0.000 title claims abstract description 34
- 239000006117 anti-reflective coating Substances 0.000 title abstract description 5
- 238000000206 photolithography Methods 0.000 title abstract description 4
- -1 acetoxysilicon compound Chemical class 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 31
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 21
- 238000004528 spin coating Methods 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 239000000376 reactant Substances 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000008199 coating composition Substances 0.000 claims description 9
- 150000004678 hydrides Chemical class 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000011541 reaction mixture Substances 0.000 claims description 8
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 6
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 4
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000005055 methyl trichlorosilane Substances 0.000 claims description 3
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005046 Chlorosilane Substances 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- JEZFASCUIZYYEV-UHFFFAOYSA-N chloro(triethoxy)silane Chemical compound CCO[Si](Cl)(OCC)OCC JEZFASCUIZYYEV-UHFFFAOYSA-N 0.000 claims description 2
- NPVQBEIMNWDKEU-UHFFFAOYSA-N chloromethoxy-dimethoxy-phenylsilane Chemical compound ClCO[Si](OC)(OC)C1=CC=CC=C1 NPVQBEIMNWDKEU-UHFFFAOYSA-N 0.000 claims description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 2
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 claims description 2
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 claims description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 2
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 claims description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 claims description 2
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 2
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 claims description 2
- 239000005048 methyldichlorosilane Substances 0.000 claims description 2
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 claims description 2
- 150000004756 silanes Chemical class 0.000 claims description 2
- 239000011877 solvent mixture Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005052 trichlorosilane Substances 0.000 claims description 2
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 2
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims 3
- WIHMGGWNMISDNJ-UHFFFAOYSA-N 1,1-dichloropropane Chemical compound CCC(Cl)Cl WIHMGGWNMISDNJ-UHFFFAOYSA-N 0.000 claims 1
- CASYTJWXPQRCFF-UHFFFAOYSA-N 2-chloroethyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCl CASYTJWXPQRCFF-UHFFFAOYSA-N 0.000 claims 1
- PKNXECFWMCLFIG-UHFFFAOYSA-N C1=CC=C(C=C1)C2=CC3=CC=CC4=C3C5=C(C=C4)C(=C(C(=C25)Cl)Cl)Cl Chemical compound C1=CC=C(C=C1)C2=CC3=CC=CC4=C3C5=C(C=C4)C(=C(C(=C25)Cl)Cl)Cl PKNXECFWMCLFIG-UHFFFAOYSA-N 0.000 claims 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 claims 1
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 claims 1
- 229950005499 carbon tetrachloride Drugs 0.000 claims 1
- FPOSCXQHGOVVPD-UHFFFAOYSA-N chloromethyl(trimethoxy)silane Chemical compound CO[Si](CCl)(OC)OC FPOSCXQHGOVVPD-UHFFFAOYSA-N 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- MTKPOFJUULWZNU-UHFFFAOYSA-N ethoxysilicon Chemical compound CCO[Si] MTKPOFJUULWZNU-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical group 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 23
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 150000002170 ethers Chemical class 0.000 abstract description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 abstract 2
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 17
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 238000002360 preparation method Methods 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000000975 dye Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 230000002051 biphasic effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 2
- 206010001513 AIDS related complex Diseases 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 210000002945 adventitial reticular cell Anatomy 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- ZDOBWJOCPDIBRZ-UHFFFAOYSA-N chloromethyl(triethoxy)silane Chemical compound CCO[Si](CCl)(OCC)OCC ZDOBWJOCPDIBRZ-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 2
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- 238000010992 reflux Methods 0.000 description 2
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 2
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- 125000002843 carboxylic acid group Chemical group 0.000 description 1
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- CBVJWBYNOWIOFJ-UHFFFAOYSA-N chloro(trimethoxy)silane Chemical compound CO[Si](Cl)(OC)OC CBVJWBYNOWIOFJ-UHFFFAOYSA-N 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical group Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
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- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T428/00—Stock material or miscellaneous articles
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Description
1238174 A7 — --- B7 五、發明説明（1 ~'—"—-~~—~— 技術領域 本發明-般係關於破璃上之吸光旋塗材料，尤其是關於可 〇到玻璃上旋塗材料巾，用作光微影巾之抗反射層之吸光 化合物，及吸光化合物之製造方法。 背景 / 為付合更快速效能之需求，需持績的降低積體電路裝置之 零件之特定尺寸。較小零件尺寸裝置之製造對許多一般用 於半導體製造之製程產生新的挑戰。此等製造製程之最重 要之一為光微影。 長久以來均了解光微影產生之直線寬度變化可由自半導體 晶圓上之底層光反射出產生之光干涉造成。由於下層型態 所導致光阻厚度之改變亦導致直線寬度之改變。在光阻層 之下塗佈抗反射塗層（ARC)曾用於防止輻射束反射之干擾。 另外，抗氧化塗層使晶圓型態部分平坦化，因為光阻厚度 更均句，因此可協助改善步驟中線寬度之變化。 有機聚合物膜，尤其是在i-線（365奈米）及g-線（436奈米） 波長處吸光者經常用於曝曬光阻劑，且最近已使用248奈米 波長處吸光者當作抗反射塗層。然而，具有許多與有機光 阻劑相同化學性質之有機ARC會限制可用之製程順序。再者 ，有機ARC可能與光阻層混合。避免混合之一方法為導入熱 固性結合劑當作有機ARC之額外成分，例如Flaim等人之美 國專利第5,693,691號中之敘述。有機ARC中亦可添加染料， 以及選用之其他添加劑，如潤濕劑、黏著促進劑、防腐劑 、及可塑劑，如Arnold等人之美國專利第4,91〇，122號中所述 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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1238174 A7 B7 五、發明説明（2 氧基氮化矽為曾用作抗反射塗層之另一種材料。然而，氧 基氮化矽以解構干涉製程用作ARC更甚於吸收，亦即需極嚴 格的控制氧基氮化物之厚度，且該材料在高度變化之型態 上無法完全用作ARC。再者，氧基氮化矽一般係以化學蒸氣 沉積沉積，但光阻層一般係使用旋塗塗佈器塗佈。其他化 學蒸氣沉積法會增加製程之複雜度。 又另一類可用作抗反射層之物質為含染料之在玻璃上旋塗 (SOG)組合物。Yau等人之美國專利第4,587，138號中揭示一 種與量約1重量％之玻璃上旋塗混合之基本黃# 1 1染料。 Allman等人之美國專利第5,100,503號揭示一種含無機染料， 如Ti02、Cr2〇7、Μο04、Μη04、或Sc04及黏著促進劑之交聯 聚有機硬氧燒。Allman另外教示亦當作偏極化層之玻璃上旋 塗組合物。然而，迄今為止揭示之玻璃上旋塗、染料結合 物無法適當的曝曬於可用於製造小尺寸裝置之深紫外線， 尤其是248及193奈米之光源中。另外，並非所有染料均可加 到任意之玻璃上旋塗組合物中。 因此仍需要在深紫外線光譜區中可強力吸收，且可加到玻 璃上旋塗組合物中，得到抗反射塗層之化合物，及製備該 吸收化合物之方法。 發明概要 深紫外線光微影用之抗反射塗層材料包含一種或多種加到 玻璃上旋塗（SOG)材料中之有機吸收化合物。依據本發明之 較佳具體例，係使用經由氧键聯與莕或蒽發色團相連之包 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) ^238174 A7 B7 五、發明説明（4 ) 一一"一一~ 物中 < 玻璃上旋塗材料之塗料溶液係用於在積體電路裝置 之各層中形成抗反射薄膜。 依據本發明之另一目的，亦提供一種製備包含吸光醚化合 物之吸收玻璃上旋塗組合物之方法。 附圖之簡要敘述 圖1敛述依據本發明之聚體例，使用甲基三乙醯氧基矽烷 製備9 -恩甲氧基_甲基二乙氧基矽烷之方法。 發明之詳細敘述 冰紫外線光微影用之抗反射塗層材料包含一種或多種加到 玻璃上旋塗（SOG)材料中之有機吸收化合物。該吸光之玻璃 上旋塗組合物溶於適當溶劑中，形成塗料溶液，且塗佈於 製造半導體裝置之各材料層上。吸光玻璃上旋塗之抗反射 圖W經設計成可輕易的整合到現有之半導體製造製程中。 得到整合之性質包含顯像劑抗性、標準光阻製程過程中之 熱安定性、及對下層之選擇性移除。 彳夕以奈及恩為主之化合物在2 4 8奈米及更低下均明顯的 吸光。以苯為主（在本文中相當於以苯基為主）之化合物在波 長低於200奈米下明顯的吸光。雖然此等以僚、蒽及苯為主 (化合物通稱之為染料，但在此處使用吸收化合物之詞， 因為此等化合物之吸光並不限於波長在光譜之可見光區中 。然而’並非所有此種吸收化合物均可加到用作ARC材料之 玻璃上旋塗中。本發明中適用之吸收化合物，其吸收峰之 寬度在可用作微影之波長範圍，如248奈米、193奈米或其他 紫外線波長如365奈米，至少為10奈米。在此等波長下僅具 本紙張尺度適财_家標準(CNS) M規格(2iQx297公菱) 1238174 A7 B7 五、發明説明（5 ) 有狹窄之吸收峰，例如少於2奈米寬，之吸收化合物並非如 所需。 適當吸收化合物之發色團一般具有一個、二個或三個可能 會或可能不會稠合之苯環。可添加之吸收化合物具有與發 色團相連之可用反應基，該反應基包含羥基、胺基、羧酸 基、及具有與一、二或三個 ''離去基〃（如烷氧基或函素原 子）鍵結之經取代甲矽烷基。乙氧基或甲氧基或氯原子為經 常使用之離去基。因此，適用之反應基包含矽乙氧基、矽 二乙氧基、矽三乙氧基、矽甲氧基、矽二甲氧基、矽三甲 氧基、氯甲矽烷基、二氯甲矽烷基、及三氯甲矽烷基。玻 璃上旋塗組合物用之可添加吸收化合物之特定實例敘述於 美國專利申請案系列編號第09/491,166號中，其係與本申請 案一起讓度，且在此提出供參考。具有一個或多個與碎键 結之乙氧基之反應基經發現較佳，尤其是對於提昇吸收SOG 薄膜之熱安定性。 依據本發明之目的，可添加之吸收化合物包含以氧键結， 與莕或蒽發色團相連之當作反應性基之矽乙氧基、矽二乙 氧基或矽三乙氧基類。因此，本發明之吸收化合物為似醚 狀（若吸收化合物中之矽原子以碳原子取代，則化合物之分 類為醚）。化合物之一般結構為
-8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1238174 A7 B7 五、發明説明（6 其中n=l-3，111 = 0- 2 ’且R為氳化燒基如甲基、乙基、或 丙基。結構.1及2說明之化合物其中之反應基矽在特殊之位 置與發色團相連。其中之反應基再另一位置相連之類似化 合物均以一般式 C14H9(CH2)nOSiRm(OC2H5)3.m 或 C10H8(CH2)nOSiRm(OC2H5)3-m敘述，且均包含在本發明中。 製備結構式1及2之吸光似醚化合物之方法係以在醇存在 下，使醇取代之稠合環發色團與乙醯氧基矽化合物之反應 為主。乙醯氧基矽反應物之一般式為RmSi(OCOCH3)4_m，其 中R之定義如上。所用乙醯氧基矽之特殊實例包含甲基三乙 醯氧基矽烷（MTAS)、四乙醯氧基矽烷（TAS)、二甲基二乙 醯氧基矽烷及二乙基二乙醯氧基矽烷。所用之醇包含甲醇 、乙醇及丙醇。 例如製備下式之9 -蒽甲氧基-甲基二乙氧基矽烷3
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係使用莫爾比為i : 1 : 2之9-蒽曱醇、MTAS及乙醇當作 反應物。由圖1中之反應機構可了解到，MTAS中之乙酿氧 基與9-E甲醇中之-CH2〇H反應，形成與含矽之反應基及乙 酸間之_鍵聯，同時MTAS中之二乙醯氧基與乙醇反應，形 本紙張尺度1Α4_(21() χ 29ϋ 1238174 A7 --— __ B7 五、發明説明（7 ) *—"" 成乙氧基及乙酸。依該製備方法，反應物係與丙酮或其他 同類，如甲基異丁基酮（MIBK)或甲乙酮合併，形成反應混 合物’其再授拌至足以形成產物3之時間（一般為數天），接 著藉由充惰性氣體或真空萃取移除乙酸副產物。由該反應 機構可了解一般而言，醇取代之熔化環化合物與乙醯氧基 碎化合物（RmSi(〇COCH3)4_m)及醇之比為i : i : 3_m。 吸光之似醚化合物可添加於包含甲基矽氧烷、甲基矽倍半 氧烷、苯基矽氧烷、苯基矽倍半氧烷、甲基苯基矽氧烷、 甲基苯基矽倍半氧烷及矽酸酯聚合物之玻璃上旋塗材料 中。至於此處所用之玻璃上旋塗材料亦包含一般式（H〇_ i.〇Si〇i.5-2.G)x之氫矽氧烷聚合物及式（HSiC)i 5)χ之氫矽倍半氧 烷永合物（其中之X大於約8 )。亦包含者為烷基氫化物基矽 氧烷或羥基氫化物基矽氧烷。玻璃上旋塗之材料另包含一 般式（Ho-uSiO^2 G)n(R’G1 GSi〇i 5 2止之有機氫化物基矽氧 烷聚合物，及一般式為（Hsi〇i5)n(R，si〇i5)n^有機氫化物基 矽倍半氧烷聚合物（·其大於〇，且m&n之總合約大於8， 且R，為烷基或芳基）。部分使用之有機氫化物基矽烷聚合物 足η與m總合約為8至約5〇〇〇，且R，為Ci_c2❹烷基或C6_Ci2芳 基。有機氫化物基矽氧烷及有機氫化物基矽倍半氧烷 物可交互代表聚合物上之旋塗。特^之實例包含甲基氣㈣ 基矽氧烷、乙基氫化物基矽氧烷、丙基氫化物基矽氧燒、第 三-丁基氫化物基矽氧烷、苯基氫化物基矽氧烷、〒基氫化 物基矽倍半氧烷、乙基氫化物基矽倍半氧烷、丙基氫化物基 矽倍半氧烷、第三-丁基氫化物基矽倍半氧烷、苯基氫化物 -10-
1238174 A7 B7 五、發明説明（8 ) 基矽倍半氧烷及其合併物。 吸光玻璃上旋塗組合物中，吸收化合物可間斷的加到玻璃 上旋塗基質中。另外，吸收化合物係與玻璃上旋塗聚合物 化學鍵結。在不受任何理論限制下，本發明者建議可添加 吸收化合物經由可用之反應基與玻璃上旋塗聚合物主鏈键 結可得到有利之結果。 玻璃上旋塗材料一般係由各種梦燒反應物製備，包含例如 三乙氧基矽烷（HTEOS)、四乙氧基矽烷（TEOS)、甲基三乙 氧基矽烷（MTEOS)、二甲基二乙氧基矽烷、二甲基二甲氧 基矽烷、四甲氧基矽烷（TMOS)、甲基三甲氧基矽烷 (MTMOS)、三甲氧基矽烷、二甲基二甲氧基矽烷、苯基三 乙氧基矽烷（PTEOS)、苯基三甲氧基矽烷（PTMOS)、二苯基 二乙氧基矽烷、及二苯基二甲氧基矽烷。齒矽烷尤其是氯 矽烷，如三氯矽烷、甲基三氯矽烷、乙基三氯矽烷、苯基 三氯矽烷、四氯矽烷；二氯矽烷、甲基二氯矽烷、二甲基 二氯矽烷、氯三乙氧基矽烷、氯三甲氧基矽烷、氯甲基三 乙氧基矽烷、氯乙基三乙氧基矽烷、氯苯基三乙氧基矽烷 、氯甲基三甲氧基矽烷、氯乙基三甲氧基矽烷、及氯苯基 三甲氧基矽烷亦可用作矽烷反應物。為製造玻璃上旋塗組 合物，吸收醚化合物，如結構式（1)或（2)或結構式（1)及/ 或（2 )之結合物及其他吸收化合物係在SOG材料製備過程中 與矽烷反應物合併。 製備吸光玻璃上旋塗組合物之一般方法中，反應槽中會形 成包含矽烷反應物，例如HTEOS、或TEOS及MTEOS、或 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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1238174 五、發明説明（9
TMOS及MTMOS ;另外四备^ 力外四鼠矽烷及甲基三氯矽烷、一 多種吸收化合物；溶崎丨劣^ ^ 、 次/谷劑之結合物，及酸/水混合物之 反應混合物。適用之溶劑包 丙酮、2_丙醇、及其他轉輩 之醇類、賴、及醋類如h丙醇、mIBK、丙氧基丙醇、及 乙酸丙酉日㊃/ 混合物為例如硝酸及水。其他質子酸或酸 酐，如乙酸、甲酸、磷酸、鹽酸、或乙酸肝均可交互用於 酸混合物中。所得混合物維持在3〇至8〇。。間約424小時 ，至得吸光SOG聚合物溶液。 吸光SOG可以以適當之溶劑稀釋，得到產生各種厚度之膜 <塗料溶液。適當之稀釋劑溶亦包含丙酮、2_丙醇、乙醇 、丁醇、乙酸丙酉旨、乳酸乙酉旨、丙二醇、甲基酸乙 酸酯、及丙二醇丙基醚，市售稱之為Pr〇pas〇1_p。具有高沸 點之稀釋劑落劑經發現更有利，如乳酸乙酯及丙二醇丙基 醚。相#咼沸點落劑可降低形成氣泡膜缺陷之可能性。相 反的’較低、滞點之溶劑會包在薄膜之交連上層之下，接著 在烘烤製程步驟中.驅除時會產生孔隙。本發明中所用之其 他溶劑包含以二醇二甲基醚（另稱之為直鏈聚醚）、苯甲醚、 二丁基醚、二丙基醚、及戊醇。塗料溶液中亦可視情況添 加界面活性劑，如3M(Minneapolis，MN)提供之產物FC340 ’或DIC(日本）提供之產物Megaface R08。塗料溶液一般含 0.5至20重量％之聚合物。使用前，以標準過濾技術過濾塗 料溶液。 形成吸光有機氫化物基矽氧烷材料之方法包含形成包含非 及相溶劑及及性溶劑之雙相溶劑混合物及相轉移處媒之混 12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 1238174 A7
奋物’添加一種或多種有機二 ’緣一 _矽烷、氫化物基三_矽烷 及一種或多種吸收化合物，搵 件到雙相反應混合物；且使雙 相反應混合物反應1至2 4小换 μ ， 广、 、’件到吸光之有機氫化物基碎 氧I $元聚合物。包含相韓移觸拔 . 邳得秒觸媒，但並不限於氯化四丁基銨 及氯化Τ基三甲基铵。列裹令非4τ 11 , 幻举< 非極性溶劑包含（但不限）戊烷 、己烷、庚烷、環己燒、茉、 _ ^〜 ^ 甲枣、二甲苯，齒化之溶劑 如四氯化碳及其混合戊。所用之極性溶劑包含水、醇及醇 與水之混合物。吸光之聚合物溶液如上述般稀釋及過滤， 形成塗料溶液。 吸光之SOG塗料溶液係依據特定之製程，塗怖於用於半導 體製程之各層上’且一般係以傳統之旋塗沉積技術。此等 技術包含分佈旋塗、厚度旋塗及熱烘步驟，得到吸光s〇g抗 反射薄膜。一般之製程包含在1〇〇〇至4〇〇〇 rpm下厚度旋塗約 20秒鐘’且在8(TC至·。C間之溫度下進行三次烘烤步驟各 約一分鐘。如下列實例2所述，具有（3)之吸光醚之吸光 SOG抗反射薄膜呈現之消散係數大於〇18。 製備9 -蒽甲氧基-甲基二乙氧基矽烷3、9_蒽甲氧基-三乙 氧基矽烷及包含此等吸收化合物之吸光s〇G材料之方法救述 於下列實例中。 實例1 9-蒽甲氧基-甲基二乙氧基矽烷之製備 將92.37克（0.419莫爾）甲基三乙醯氧基矽烷（Μτα§)、 87.36克（0.419莫爾）9·蒽甲醇、38.56克（0.839莫爾）乙醇、 595.51克（10.20莫爾）丙酮合併於三升之瓶中。使溶液在氣氣 -13- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 1238174 A7 ______________ B7 _____ 五、發¥説明 Γ""^ ~~~~~~~~~ ~~ ~ 中攪拌7天。溶液經除氣移除乙酸副產物。 實例2 含9 -蒽甲氧基·甲基二乙氧基矽烷之吸光s〇G之製備 將297克（4.798莫爾）2-丙醇、148克（2.558莫爾）丙酮、123 克（0.593 莫爾）TEOS、77 克（0.432莫爾）MTEOS、200克實例 1中製備之9-蒽甲氧基-甲基二乙氧基矽烷、261克（0.009莫 爾）玫紅酸、1 0克（0.024莫爾）2-羥基-4-(3-三乙氧基甲矽烷 基丙氧基）二苯基酮、〇·〇9克（0.0004莫爾）蒽黃酸、0.6克1.0 Μ硝酸及72克（3.716莫爾）去離子水合併於1升瓶中。使該瓶 回流4小時。溶液中添加43克（0.590莫爾）之丁醇。過濾溶 液。溶液經分配，接著以3000 rpm厚度旋塗20秒，且各在 8 0°C 及 180°C 下烘烤一分鐘。以 n&K Technology Model 1200 分析儀測量光學性質。薄膜厚度為2801埃。248奈米下之反 射係數（η)為1.470，且消散係數（k)為〇·185。 實例3 9 ·蒽甲氧基-三乙氧·基矽烷之製備 將110.73克（0.419莫爾）四乙醯氧基矽烷（TAS)、87.36克 (0.419莫爾）9_蒽曱醇、57.98克（ 1.2585莫爾）乙醇、595.51克 (10.20莫爾）丙酮合併於3升瓶中。使溶液在氮氣中揽拌7天 。所得溶液除氣移除乙酸副產物。 實例4 含9-蒽甲氧基-三乙氧基矽烷之吸光s〇G溶液之製備 將297克（4.798莫爾）2_丙醇、148克（2.558莫爾）丙酮' 123 克（〇·593 莫爾）TEOS、77 克（0.432莫爾）MTEOS、200克實例 -14 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 1238174 A7 -~ B7 五、{ 12 ) — _ --— 3中製備之9·®甲氧基三乙氧基㈣、G.6jU()M硝酸及72 克（3.716莫爾）去離子水合併於！升瓶中。使帛瓶回流*小時 。溶液中添加43克（0.590莫爾）之丁醇。過濾溶液。 S 9 -蒽甲氧基-甲基二乙氧基石夕燒之吸光s〇G之製備 將297克（4.798莫爾）2_丙醇、148克（2.558莫爾）丙酮、123 克（0.593 莫爾）TEOS、77 克（0.432莫爾）MTEOS、200克實例 1中製備之9-¾甲氧基_甲基二乙氧基碎燒、〇6克1〇 %硝酸 及7 2克（3.716莫爾）去離子水合併於i升瓶中。使該瓶回流4 小時。溶液中添加43克（0.590莫爾）之丁醇。過濾溶液。 雖然本發明已參考特定之實例敘述，但此等實例僅為本發 明應用之實例，不應視同本發明之限制。揭示實例特性之 各種分離及合併均在下列申請專利範圍所定義之本發明申 請專利範圍中。 -15-本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公羡)
Claims (1)
- A8 B8 C8 ..JDB. 123 8 VMl 17454號專利申請案 中文申請專利範圍替換本(93年10月） 申請專利範圍 1 · 一種製備吸光似醚化合物之方法，該方法包括： 結合醇取代之稠合苯環化合物（該稠合之環化合物包 括二或三個環）、乙醯氧基矽化合物、醇、及溶劑，製 成反應混合物，其中乙醯氧基矽化合物之一般式為 RmSl(〇C〇CH3)4-m，其中R係為氫或一烷基，且m=〇-2 ’且其中之稠合環化合物、乙醯氧基矽化合物及醇係以 化學計量比1 : 1 : 3-m結合； 攪拌反應混合物至足以形成吸光醚化合物之時間；及 移除酸副產物。 2 ·如申請專利範圍第1項之方法，其中乙醯氧基矽化合物 之一般式為RmSi(OCOCH3)4_m，其中之R係選自由氳' 甲基、乙基、及丙基所組成之群，且^==0-2，且其中 之稠合環化合物、乙醯氧基矽化合物及醇係以化學計量 比1 · 1 · 3 - in結合。 3 ·如申請專利範圍第2項之方法，其中之乙醯氧基矽化合 物為甲基三乙醯氧基矽烷。 4 ·如申請專利範圍第2項之方法，其中之稠合環化合物為 9 -蒽甲醇。 5 _如申請專利範圍第2項之方法，其中之醇為乙醇。 6·如申請專利範圍第3項之方法，其中之高吸光醚化合物 為9 -蒽甲氧基-甲基二乙氧基矽烷。 7 * 一種吸光玻璃上旋塗之組合物，該組合物包括碎燒聚合 物及包括二或三個稠合苯環及與選自由矽乙氧基、石夕二 乙氧基、及矽三乙氧基所組成之群之含矽類鍵聯之氧之 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)吸光似醚化合物。 8 •如申請專利範圍第7項之組合物，其中之吸光醚化合物之 般式為 C14H9(CH2)n〇SiRm(〇C2H5)3_m4c10H8(CH2)n〇SiRm(〇c2H5)3· m，其中n=i-3，m = 〇_2，且尺係選自由氫、甲基、乙 基及丙基所組成之群。 如申w專利範圍第8項之組合物，其中之吸光醚類化合 物為9-E甲氧基_甲基二乙氧基矽烷。 口 11 如申μ專利範圍第7項之組合物，其中之石夕氧燒聚合物 係選自由甲基矽氧烷、甲基矽倍半氧烷、苯基矽氧烷、 苯基矽倍半氧烷、甲基苯基矽氧烷、甲基苯基矽倍半氧 烷、及矽酸酯聚合物所組成之群之聚合物。 如申印專利範圍第7項之組合物，其中之矽氧烷聚合物 為選自由氫矽氧烷、氫矽倍半矽氧烷、有機氫化物基矽 氧烷、及有機氫化物基矽倍半氧烷聚合物，及氫矽倍半 氧烷及烷氧基氫化物基矽氧烷或羥基氫化物基矽氧烷所 組成之群之共聚物。 12·如申請專利範圍第u項之組合物，其中之矽氧烷聚合 物為具備選自由下列所組成之群之一般式之聚合物·· (Hw.〇Si〇m‘，其中之 X 大於 8，及（H〇 i 〇Si〇i 5_ ，其中m大於〇，且之她人 至5000，且R，為Cl-C2Q烷基或C6-Ci2芳基。 〜口 13. -種塗料溶液，纟包括如申請專利範圍第7項之組合物 及溶劑或溶劑混合物。 14·如申請專利範圍第13項之塗料溶液，其中溶液中之吸 2- 1238174 A8 B8 C8 ______ D8 六、申請專利範圍 光玻璃上旋塗組合物在〇·5%至2〇%(重量）之間。 1 5. —種製備吸光玻璃上旋塗組合物之方法，包括： 結合一種或多種選自由烷氧基矽烷及鹵矽烷所組成之 群之碎坑反應物，一種或多種可添加之有機吸收化合物 (且其中至少一種有機吸收化合物為包括二或三個稠合 苯環及與選自由矽乙氧基、矽二乙氧基、矽三乙氧基所 組成之群之含矽類鍵聯之氧之吸光醚化合物）、酸/水混 合物及一種或多種溶劑，形成反應混合物，及 使反應混合物維持在3 0至8 0 t：之溫度下，至足以形 成吸光玻璃上旋塗組合物之時間。 1 6 ·如申請專利範圍第1 5項之方法，其中之一種或多種矽 燒反應物係選自由三乙氧基石夕燒、四乙氧基石夕垸、甲基 三乙氧基矽烷、二甲基二乙氧基矽烷、二甲基二甲氧基 石夕燒、四甲氧基矽烷、甲基三甲氧基矽烷、三甲氧基矽 烷、二甲基二甲氧基矽烷、苯基三乙氧基矽烷、苯基三 甲氧基矽烷、二苯基二乙氧基矽烷、及二苯基二甲氧基 石夕燒。IS矽烷尤其是氯矽烷，如三氯矽烷、甲基三氯矽 k*、乙基二氯梦燒、苯基三氯碎燒、四氯石夕燒；二氯石夕 烷、甲基二氯矽烷、二甲基二氯矽烷、氯三乙氧基矽烷 、氯二甲氧基石夕燒、氯甲基三乙氧基石夕燒、氯乙基三乙 氧基石夕虎、氯苯基三乙氧基矽烷、氯甲基三甲氧基矽烷 、氯乙基三甲氧基矽烷、及氯苯基三甲氧基矽烷所組成 之群。 1 7 ·如申請專利範圍第1 6項之方法，其中之一種或多種硬 I_ '3· 本紙張尺度it财目S家標準(CNS) A4規格(210X297公羡） · --- 74 ΊΧ 8 3 2 8 8 8 8 A B c D 六、申請專利範圍 烷反應物為四乙氧基矽烷及甲基三乙氧基矽烷。 1 8 .如申請專利範圍第1 5項之方法，其中之酸/水混合物為 硝酸/水混合物。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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-
2000
- 2000-07-17 US US09/617,365 patent/US6368400B1/en not_active Expired - Fee Related
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2001
- 2001-07-12 AU AU2001280558A patent/AU2001280558A1/en not_active Abandoned
- 2001-07-12 JP JP2002512299A patent/JP2004504328A/ja not_active Withdrawn
- 2001-07-12 CA CA002413726A patent/CA2413726C/en not_active Expired - Fee Related
- 2001-07-12 WO PCT/US2001/022232 patent/WO2002006402A1/en active Application Filing
- 2001-07-12 EP EP01958953A patent/EP1301569A4/en not_active Withdrawn
- 2001-07-12 CN CNB018130097A patent/CN1296435C/zh not_active Expired - Fee Related
- 2001-07-12 KR KR1020037000660A patent/KR100804870B1/ko not_active IP Right Cessation
- 2001-07-17 TW TW090117454A patent/TWI238174B/zh not_active IP Right Cessation
- 2001-08-07 TW TW093130882A patent/TW200512257A/zh unknown
- 2001-11-05 US US10/012,651 patent/US6605362B2/en not_active Expired - Fee Related
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2003
- 2003-04-30 US US10/428,807 patent/US6914114B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1301569A1 (en) | 2003-04-16 |
| US6914114B2 (en) | 2005-07-05 |
| AU2001280558A1 (en) | 2002-01-30 |
| CA2413726C (en) | 2005-11-29 |
| KR100804870B1 (ko) | 2008-02-20 |
| WO2002006402A1 (en) | 2002-01-24 |
| EP1301569A4 (en) | 2007-08-29 |
| CN1296435C (zh) | 2007-01-24 |
| KR20030031120A (ko) | 2003-04-18 |
| JP2004504328A (ja) | 2004-02-12 |
| US20030199659A1 (en) | 2003-10-23 |
| CA2413726A1 (en) | 2002-01-24 |
| US6368400B1 (en) | 2002-04-09 |
| TW200512257A (en) | 2005-04-01 |
| CN1443218A (zh) | 2003-09-17 |
| US6605362B2 (en) | 2003-08-12 |
| US20020068181A1 (en) | 2002-06-06 |
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