TW552651B - Bonding method and bonding apparatus - Google Patents

Bonding method and bonding apparatus Download PDF

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Publication number
TW552651B
TW552651B TW091102202A TW91102202A TW552651B TW 552651 B TW552651 B TW 552651B TW 091102202 A TW091102202 A TW 091102202A TW 91102202 A TW91102202 A TW 91102202A TW 552651 B TW552651 B TW 552651B
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TW
Taiwan
Prior art keywords
thermosetting resin
cooling
temperature
infrared
heating
Prior art date
Application number
TW091102202A
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English (en)
Inventor
Shigetaka Kobayashi
Takeshi Yamada
Masaki Hanada
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Ibm
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Publication of TW552651B publication Critical patent/TW552651B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/40—General aspects of joining substantially flat articles, e.g. plates, sheets or web-like materials; Making flat seams in tubular or hollow articles; Joining single elements to substantially flat surfaces
    • B29C66/47—Joining single elements to sheets, plates or other substantially flat surfaces
    • B29C66/472—Joining single elements to sheets, plates or other substantially flat surfaces said single elements being substantially flat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1403—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the type of electromagnetic or particle radiation
    • B29C65/1412—Infrared [IR] radiation
    • B29C65/1416—Near-infrared radiation [NIR]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1429—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface
    • B29C65/1435—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. transmission welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1477—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation making use of an absorber or impact modifier
    • B29C65/148—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation making use of an absorber or impact modifier placed at the interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1496—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation making use of masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
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    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/4805—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the type of adhesives
    • B29C65/483—Reactive adhesives, e.g. chemically curing adhesives
    • B29C65/4835—Heat curing adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/347—General aspects dealing with the joint area or with the area to be joined using particular temperature distributions or gradients; using particular heat distributions or gradients
    • B29C66/3474—General aspects dealing with the joint area or with the area to be joined using particular temperature distributions or gradients; using particular heat distributions or gradients perpendicular to the plane of the joint
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/348—Avoiding melting or weakening of the zone directly next to the joint area, e.g. by cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/72—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the structure of the material of the parts to be joined
    • B29C66/721—Fibre-reinforced materials
    • B29C66/7212—Fibre-reinforced materials characterised by the composition of the fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/912—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux
    • B29C66/9121—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature
    • B29C66/91211—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature with special temperature measurement means or methods
    • B29C66/91212—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature with special temperature measurement means or methods involving measurement means being part of the welding jaws, e.g. integrated in the welding jaws
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/912—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux
    • B29C66/9121—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature
    • B29C66/91231—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by measuring the temperature, the heat or the thermal flux by measuring the temperature of the joining tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
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    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
    • B29C66/9141—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature
    • B29C66/91411—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature of the parts to be joined, e.g. the joining process taking the temperature of the parts to be joined into account
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
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    • B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
    • B29C66/9141—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature
    • B29C66/91421—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature of the joining tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
    • B29C66/9161—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the heat or the thermal flux, i.e. the heat flux
    • B29C66/91641—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the heat or the thermal flux, i.e. the heat flux the heat or the thermal flux being non-constant over time
    • B29C66/91643—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the heat or the thermal flux, i.e. the heat flux the heat or the thermal flux being non-constant over time following a heat-time profile
    • B29C66/91645—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the heat or the thermal flux, i.e. the heat flux the heat or the thermal flux being non-constant over time following a heat-time profile by steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
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    • B29C2035/0822—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using IR radiation
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C43/32—Component parts, details or accessories; Auxiliary operations
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    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
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    • H05K3/3494—Heating methods for reflowing of solder

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Wire Bonding (AREA)
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Description

552651 A7
本發明係關於一種黏合方法，苴一 線投射以利加敎及冷卻，特別： ^月曰材料進行紅外 ……本發明係關於-種適於 利用、，，外線投射至熱固性樹脂上以 ~ 〇α ^ ^ '口 /夜晶顯不面板及 ;广電路基板之黏合方法，[種用於此黏合之黏合 二：：裝置係廣泛使用做為個人電腦及多種其他監視 顯示裝置，大體上，此一液晶顯示褒置係藉由配 置一做為平面型光源之照明背光於一液晶顯示面板後方而 構成，因而以整體均句之亮度投射於一具有特定寬度之液 晶面板，且可看見一形成於液晶顯示平面上之影像。 -液晶顯示裝置包括一液晶顯示面板，係由二玻璃基板 與-封存於其間之液晶材料組成，—印刷電路基板，用於 驅動組裝在液晶顯示面板上之液晶材料，一背光單元，係 透過一液晶顯示面板固持架而設於液晶顯示面板後方，及 一外框架，用於覆蓋諸組件。 在液晶顯示裝置之間，在一薄膜電晶體（TFT)液晶顯示 裝置中’構成液晶顯示面板之玻璃基板係構成一陣列基 板’其他者則構成一濾色基板。除了做為液晶材料、顯示 電極及信號線之驅動器元件的丁 FT s外，在陣列基板上設有 抽取電極可供電力連接於上述印刷電路基板及類似者。由 於T FT s係規則地排列於玻璃基板上，玻璃基板即可視為一 陣列基板。除了濾色板外，在濾色基板上設有共同電極、 黑色基質及類似者。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 552651
印刷電路基板大體上係透過製於陣列基板上之膠帶自動 黏合（TAB)膠帶載體（文後簡稱為一 “TAB”）而連接於（或安 裝於）抽Φ電極上’ τ AB之輸人線導體則例如利用焊接以連 接於印刷電路基板之對應電極。另方面，ΤΑβ之輸出線導 體係連接於陣列基板之對應抽取電極。一各向異性導電膜 (ACF)或一各向異性導電膏（ACp)已曾經用於連接之輸 出線導體至陣列基板之對應抽取電極。 除了利用TAB組裝，另一組裝技術稱為覆晶玻璃 (COG) ’ COG係一利用ACF或ACP以將IC矽晶片（文後稱為 一 ‘‘石夕晶片”）黏合於陣列基板上之技術。 ACF或ACP (文後總稱為ACF)係一黏合劑且具有由導電材 料組成之粒子散布於其内。目前有二種ACF，亦即一使用 熱塑性樹脂做為一黏合劑之熱塑性ACF及一使用熱固性樹 脂做為一黏合劑之熱固性ACF。 相關於加熱與加壓之高溫加壓執行係普遍用在熱塑性ACF 及熱固性ACF黏合技術中，使用高溫加壓之黏合技術具體 貫例將參考圖6說明於後。圖6揭示一利用ACF 124將一矽晶 片121黏合於一液晶顯示面板丨2〇之陣列基板123上的裝置主 要結構，液晶顯示面板包含陣列基板123及一濾色板125且 分別備有一偏光板126。黏合裝置係由一加熱器器具u丨及 一後援塊116組成，加熱器器具11 1具有一未繪示之加熱器 内建結構。 冨碎曰曰片1 2 1黏合於陣列基板12 3上時，如圖6所示，加熱 器器具11 1係在將陣列基板123、矽晶片121及ACF 124夾置 -6- 本紙張尺度適用中國國家標準((：；]^8) A4規格(210X 297公釐) :651
發明説明（ 於加熱器器具111與後援塊116之間時加熱，來自加熱器器 具111之熱係經由矽晶片121而傳導至ACF 124，ACF 124因 而藉由此熱傳導加熱與固化。對於一加熱方法而言，亦有 才jm 、 一脈波加熱法之例子，其中藉由施加低頻脈波之大電 机於加熱器器具1丨丨所產生之金屬熱損係用於立即產生熱， 波加熱法具有溫度與壓力構型之高自由度的優點。 A准’由於習知黏合方法並未考量到金屬之熱膨脹或收 2，其會引起多種問題，特別是當施加於一要求窄間距與 窄框之大型液晶顯示面板時。 其中一項問題為當組裝聚醯亞胺製成之tab及類似物與 石夕曰曰片及類似物組成之組裝受體時’熱膨脹後鄰靠於ACF 黏合劑上之一陣列基板與一 TAB或一矽晶片之間之收縮差 異所發生之不均勻組裝，不均勻之組裝會隨著acf之較大 黏合力而發生於較大範圍。 此不均勻性之發生係在組裝一矽晶片時特別顯著，因為 其剛性比一 TAB者；^，此為在A型高鮮明度液晶顯示面板 組裝技術中抑制組裝矽晶片擴散之主要因f。在組裝ΤΑβ 之例子中，不均句組裝之發生並不㈣，因為聚醯亞胺比 玻璃有足夠低之剛性。$，其仍包括相同於矽晶片組裝中 之不均勻組裝機構。 、 圖7Α至7C係用於說明一發生不均勻組裝之機構的視圖。 在圖7Α中，加熱器器具lu係一利用熱傳導以加熱丁^或 矽晶片12〗之加熱器，矽晶片121則經由熱固性acf 124以設 置於陣列基板123上。 552651
在此’若用於固化ACF 124所需之溫度例如為210 °c，則 加熱器器具1 11之加熱溫度應該設定為大約250°C。在此狀 況中’陣列基板123底表面之溫度達到大約7〇它，亦即，一 貫質上之溫度梯度出現於自矽晶片121至陣列基板123之方 向中。 圖7B揭不ACF 124加熱後一冷卻過程之狀態的視圖。一物 件係在其溫度下降時收縮，且此收縮係在溫度變化前後之 間之/JDL度差異較大時變得較顯著。矽晶片12 1係在圖式上 4之箭頭所不方向中收縮，且陣列基板丨同樣在圖式下部 之箭頭所示方向中收縮，應該注意的是諸箭頭之長度亦代 表收縮之強度。 圖7C揭示一狀態，其中ACF 124完全固化及矽晶片121係 黏合於陣列基板123。在此狀況中，由於陣列基板123之一 加熱酿度較低於矽晶片丨2丨之一加熱溫度，故矽晶片12 1顯 示較大之收縮。據此，如圖7C所示，由ACF 124圍起之矽 晶片121及陣列基板123即形成一彎弧。在此，彎弧具有矽 晶片121於其内弧形上，因為矽晶片121具有較大之收縮。 由於陣列基板123未來反應於較薄液晶顯示裝置之需求而 變薄，或者在使用低剛性玻璃於陣列基板123時，此彎弧之 發生皆成為一大組裝問題。 第一問題在於濾色板125及類似物可受到來自加熱器器具 111之熱的扣害’其原因為加熱器器具1 1 1係反應於窄框之 而求而較接近於液晶顯示面板之組件。用於固化ACF 124所 需之溫度範圍大約為170。(；至230。(：；惟，加熱器器具ln之 -8- 本紙張尺度適用巾目S家標準(CNS) A4規格(21GX 297公6 ^52651 A7
加熱溫度設定於3(TC至40t以上。據此，實質上之熱可施 加於液晶顯示面板之一液晶材料、一封合黏合劑、濾色板 顏料、偏光板及類似物，此熱有使液晶材料及封合黏人, 變形之虞。 。-口月 -附Y地，2 5 6 8 8 5 3號日本專利揭露一種以紅外線投射做為 電磁波而固化熱塑性ACF之技術，依2568853號日本專利所 示，用於固化ACF之熱係藉由紅外線投射至ACF上而產生， 此包括解決某些上述問題之可能性。惟，該技術並未提出 一有效方法以防止溫度梯度所致之彎弧發生。再者，近年 來一黏合技術已從使用熱塑性ACF變成使用熱固性ACF，此 因熱固性ACF具有可藉由昇高其溫度至固化溫度而呈固化 之優點。 另方面，日本經審查專利公告平成5( 1993)-2〇622〇號揭露 一種利用紅外線投射而加熱及固化ACF之技術。惟，依曰 本經審查專利公告平成5( 1993)-206220號揭露之技術所 示，一做為使用ACF黏合受體之膠帶載體封裝（TCP)係先預 熱且隨後以紅外線投射，藉此以該處附近所生之熱而加熱 於ACF。據此，日本經審查專利公告平成5( 1993)- 206220號 之技術需以一黑炭材料塗覆T CP，以利吸收紅外線，且將 一相似之塗料混合於ACF，以利吸收紅外線。此要求建議 紅外線之投射並未達到足夠之加熱效率，再者，有關於塗 料之塗覆或混合等特殊過程仍需添加。 發明概要
因此，本發明之一目的在提供一種可以在使用熱固性ACF _ -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 552651 五、發明說明（6 '—τ抑制彎孤發生之技術。再者，本發明之一目的在提 * ' ——I μ. 以有效率地固化熱固性acf而不需要增添新製 程0 在一習知黏合方法中，一 TAB或一矽晶片係利用熱傳導 加熱’由此，一 ACF再由TAB或矽晶片之熱傳導加熱。利 用熱傳導加熱一陣列基板亦可視為使用熱傳導加熱ACF之 一種方式’惟，構成陣列基板之玻璃具有比TAB或石夕晶片 者低之熱傳導率；因此，藉由加熱τ AB或矽晶片而加熱 Ϊ7 了以比加熱卩車列基板時更有效率。基於此原因， ΑΒ或石夕曰曰片係在習知實施中加熱，惟，加熱τ αβ或石夕晶 片則會造成溫度梯度。 在陣列基板係由上述加熱器器具之傳導熱加熱之例子 中’ ACF之有效率加熱會因為其低熱傳導率而無法達成。 反之，若電磁波投射於陣列基板之一特定部分以誘發自行 加熱’及若此熱可傳導至ACF，則可達成有效率加熱。再 者，右投射於陣列基板之一部分電磁波到達ACF，其亦造 成ACF之自行加熱，藉此達成ACF之有效率固化。 根據上述知識，本發明係一種黏合方法，包含以下步 驟·配置熱固性樹脂於一第一構件及一第二構件之間；及 藉由電磁波投射至熱固性樹脂上而加熱及固化熱固性樹 脂，以黏合第一構件及第二構件。在此，帛二構件係由一 在電磁波投射時可吸收-部分電磁波且可傳輸另-部分之 材料組成，及傳輸通過第二構件之電磁波係投射錢固性 樹脂上。 -10 >52651
發明之黏合方法中’電磁波例如紅外線係投射於第 ::件之-特定㈣’由於第二構件係由一在電磁 ::吸收-部分電磁波且可傳輸另—部分之材料組 :電磁波之吸收即造成自行加熱。因自行加熱所生之輕射 …可做為一熱源，供固化熱固性樹脂。此外，傳輸通過第 :構件之電磁波係投射至熱固性樹脂上，亦造成其自行加 …。貫際上，依本發明所示，熱固性樹脂係由第二構件之 傳導熱及其本身之輻射熱加熱，#此達成有效率之加熱及 固化。 當本發明之黏合方法施加於一液晶顯示面板之上述組裝 方法時，第一構件即相當於TAB或矽晶片，而第二構件相 當於陣列基板。 在本發明之黏合方法中，較佳為使用近紅外線做為電磁 波0 再者，在本發明中，電磁波可在第一構件加熱至一特定 酿度後才投射於熱固性樹脂。此可更有效率地加熱熱固性 樹月曰’或減小自第一構件至第二構件方向中之溫度梯度至 最小。 再者’本發明提供一種黏合方法，包含以下步驟：經由 熱固性樹脂放置另一構件於一玻璃基板上；將具有8〇〇至 1200 nm波長範圍内之近紅外線透過玻璃基板以投射至熱固 性树脂上，及冷卻及固化藉由近紅外線投射而加熱之熱固 性樹脂。 在本發明之黏合方法中，當近紅外線之波長降低至800至 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 552651 ---— ___B7 五、發明説明（8 ) 1200 nm波長範圍内時，熱固性樹脂之吸收效率高；因此其 較適於熱固性樹脂之固化。 士在本發明之黏合方法中，當近紅外線投射該玻璃基板 日守’玻璃基板係藉由吸收一部分該投射之近紅外線而進行 自行加熱，及近紅外線之另一部分係傳輸通過該玻璃基板 且投射至該熱固性樹脂由近紅外線投射之熱固性樹脂產生 藉由自行加熱而造成之輻射熱。因此，熱固性樹脂係由玻 璃基板之傳導熱及其本身之輻射熱加熱，藉此達成有效率 之固化。 在本發明之黏合方法中，熱固性樹脂在加熱後之冷卻過 程中之溫度控制極為重要，儘管熱固性樹脂具有加熱固化 之特徵’但是並不意味著樹脂需要緊隨於固化反應開始之 後立即完全固化。在加熱至一特定溫度固化點後之一冷卻 過私期間，熱固性樹脂維持某些程度之撓性，且在一玻璃 過渡服度及其以下之溫度範圍内達成完全固化。因此，在 玻璃過渡溫度以上之溫度範圍内，不致發生圖7所示之彎 弧，或者僅以輕微程度發生。反之，彎弧會在玻璃過渡溫 度及其以下之溫度範圍内變得明顯。在此，當加熱至相同 溫度後再冷卻時，矽晶片121與陣列基板123具有不同冷卻 率，特別是，矽晶片12ι係比陣列基板123較快冷卻。據 此，抑低冷卻過程期間矽晶片121與陣列基板123之間之溫 度差異極為重要，以避免發生彎弧。因此，本發明提供一 種黏σ方法，包含以下步驟：配置熱固性樹脂於一第一構 件及一第二構件之間；加熱該熱固性樹脂以供固化；及冷 部忒熱固性樹脂。在此，一溫度差異抑低處理係在該冷卻 t a S A4»(21〇x 2971^) 552651 五、發明説明（9 步驟期間執行，以抑低該第一構件及該第二構件之間之一 溫度差異。 —在本發明之黏合方法中’對於溫度差異抑低處理之一具 -矛序第構件及第一構件任一者之冷卻可在冷卻步驟 中抑制，或第-構件及第二構件任一者之冷卻可以加速， ’’心之冷卻之抑制或加速可以同時實施。假設第一構件為 矽曰曰片121 ’而第二構件為陣列基板123，例如’抑制矽晶 片121之冷卻同時加&陣列基板123之冷卻，#此抑低冷卻 步驟期間矽晶片121與陣列基板123之間之溫度差異。及執 行溫度差異抑低處理時，谓測第-構件及第二構件至少一 者之皿度，以根據谓測溫度而執行溫度差異抑低處理。此 測可以直接自第一構件及/或第二構件進行，或間接 在本發明之黏合方法中’可以加速冷卻第一構件及第二 熱量之構件’同時抑制冷卻第-構件及第 :構件中具有較小熱量之構件。依此方式 處理例如冷卻之加速及抑制即可以考量熱量而執行。 再者’在本發明之黏合方法中，在冷卻 有助於從在加熱步驟中昇高之溫度至Li m璃過渡溫度之溫度範圍内，達成 及、 構件之均勾收縮u件及第二構件之間之⑺^ 而可在冷卻過程期間溫度達到 -因 時消除，及因此，溫度差異抑低處範圍内 構件之間之收縮差異不發生於玻璃過渡溫度或^者及弟- -13 - 裝 訂 線 本紙張尺度it财目國冢標準(CNS) A4規格(21GX297公57 552651 A7 B7
五、發明説明（ 本發明提供以下裝置，其可達成本發明之上述黏合方 法。特別是，本發明之黏合裝置係一藉由加熱及固化一由 熱固性樹脂組成之黏合劑以執行黏合一第一構件及一做為 黏合受體之第二構件的黏合裝置，黏合裝置包含：—光 源，係產生近紅外線以供加熱黏合劑；一支承基座，具有 一近紅外線傳輸區，可傳輸由光源產生之近紅外線且支承 黏合受體；一加熱器，用於加熱第一構件及/或第二構件； 及一冷卻系統，用於冷卻第一構件及/或第二構件。 在此，加熱器係藉由抑制冷卻過程中之第一構件之A 卻，以抑低第一構件及第二構件之間之溫度差異。再者， 本發明之黏合裝置之冷卻系統可抑制不同加熱之部分第二 構件’且藉由冷卻第二構件以抑制第一構件及第二構件間 之溫度差異。 本發明之黏合裝置備有支承基座，其具有近紅外線傳輸 區，可供傳輸近紅外線。據此，近紅外線可在支承黏合受 體之狀態中，透過支承基座之近紅外線傳輸區而投射於一 做為黏合劑之熱固性ACF，亦即在支承一透過熱固性ACF而 具有一 T AB或一矽晶片於其上之陣列基板狀態中。 在本發明之黏合裝置中，傳輸通過支承基座之近紅外線 傳輸區的近紅外線投射於黏合劑，以容許投射而產生輻射 熱。 再者’本發明之黏合裝置中近紅外線係在做為黏合劑之 熱固性樹脂配置於第一構件及第二構件間之狀態中投射於 熱固性樹脂，第二構件係由一可傳輸近紅外線之材料組 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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線 552651 A7 — _B7 五、發明説明（11 ) ' - 一 j。黏合裝置可具有一結構，其中第二構件設置於支承基 座之表面上，且傳輸通過支承基座之近紅外線傳輸區的 近紅外線係進一步傳輸通過第二構件以投射於熱固性樹 月曰，且因此熱固性樹脂係利用投射所產生之輻射熱而加 埶。 4 \\\ 再者’本發明之黏合裝置可包括一快門，用於調節光源 才又射之近紅外線之一投射區域，其有助於僅投射近紅外線 於所需之位置。 對於本發明之黏合方法之一具體實例，可以引証一液晶 顯不面板内之組裝方式。據此，本發明提供一種黏合方 法’其包含以下步驟··將熱固性樹脂配置於一矽晶片及一 玻璃基板之間；加熱矽晶片至一特定溫度；將近紅外線投 射至玻璃基板上，且利用玻璃基板及傳輸通過玻璃基板之 近紅外線加熱熱固性樹脂；及冷卻受熱之矽晶片、熱固性 樹脂及玻璃基板，以利抑低矽晶片及玻璃基板之間之一溫 度差異於一特定之溫度範圍内。 在本發明之黏合方法中，特定之溫度範圍係在熱固性樹 脂之一固化反應終止時之溫度附近。 再者’在本發明中，冷卻步驟可藉由加速冷卻玻璃基板 以及抑制冷卻石夕晶片，以抑低石夕晶片及玻璃基板之間之溫 度差異。 在本發明之黏合方法中，矽晶片及該玻璃基板之間之溫 度差異較佳為在熱固性樹脂之固化反應終止時之溫度附近 實際上達到零。 _ _ 15_ 本紙張尺度適财® S家標準(CNS)—A4規格(21GX 297公董) 552651 A7 B7 五、發明説明（12 圖式簡單說明 為了徹底暸解本發明及其優點，請即參考以下說明且配 合相關圖式。 圖1係一視圖，揭示本發明之一實施例之面板組裝裝置。 圖2係一流程圖，揭示本發明實施例之黏合主體與黏合受 體之過程。
圖3 A至3 C係視圖’揭示本發明實施例之一溫度梯度及熱 膨脹。 圖4A至4E係視圖，說明本發明實施例加熱時之效果。 圖5A至5C係視圖，說明本發明實施例冷卻時之效果。 圖6係一視圖，簡示一習知黏合方法。 裝 圖7 A至7 C係視圖，說明造成習知黏合方法中之一溫度梯 度及一熱膨脹差異之收縮不均一機構。 較佳實施例之詳細說明 訂
線 現在，本發明之一實施例將參考相關圖式以說明之。 首先，將說明相關於圖1所示本發明之一實施例之面板組 裝裝置之結構，圖1所示之面板組裝裝置係一用於將一矽晶 片21組裝於一液晶顯示面板2〇上之裝置。在此，液晶顯示 面板20係一裝接一偏光板26於其底表面上之陣列基板以與 一裝接一偏光板26於其頂表面上之濾色板25之疊層，且其 間備有一指定間隙。在矽晶片21之一底表面上，設有由金 製成之凸塊22，諸緩衝塊22可達成矽晶片21與陣列基板23 上所形成抽取電極（圖中未示）之間之電力連接。矽晶片21 與陣列基板23之黏合係以一熱固性acf 24執行。 -16-
552651 A7 B7 五、發明説明（ 13 ) 圖1所示之面板組裝裝置包含一用於加熱與加壓矽晶片2 J 之加熱/加壓系統1 0、一用於投射近紅外線3 6之近紅外線投 射系統30、及一用於冷卻供熱固性ACF 24固化之熱之冷卻 糸統。 加熱/加壓系統1 0包含一加壓塊丨丨、一熱絕緣體丨2、一加 熱器器具1 3、一壓力緩衝器14、一由工業用之熔態矽土製 成之固持塊1 5、及後援塊1 6。 加壓塊11係一用於壓縮黏合石夕晶片21至陣列基板2 3之塊 體，此為總成之主體，必要的是使用一具有小線性膨脹係 數之硬化特殊鋼做為加壓塊1 i。 熱絕緣體12將加壓塊11呈熱絕緣於加熱器器具13，較特 別的是，其用於不使加壓塊丨丨與一供驅動加壓塊丨丨之機構 受到熱膨脹而偏折，且可使用有孔性陶材於此目的。惟， 任意其他材料皆可使用，只要其具有高剛性、良好傳熱 性、及低變性與偏折等特徵。 · 加熱器器具13係用於預熱與輔熱矽晶片2丨之加熱裝置， 文後將詳細說明相關之預熱與輔熱。加熱器器具丨3係一設 有平面設置加熱器於其中央處之小型固定加熱器，對於其 基礎物質而言，必須使用陶材，其在加熱與冷卻中呈高反 應性’且有高剛性以在熱壓下呈低偏折。 壓力緩衝器14提供於加熱器器具13與矽晶片21之間，係 加熱之受體。在一面對高度不均勻性而有一定緩衝能力之 T AB黏合於陣列基板23之例子中，壓力緩衝器丨4即較少必 要性。惟’在黏合高剛性材料之例子中，例如矽晶片2丨與 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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552651
陣列基板23，相互間之平面準確度係因各別黏合表面之波 狀起伏而難以穩定。在此例子中，壓力之不均勻性即發生 於矽晶片21與陣列基板23之間，可能造成瑕疵性連接。壓 力緩衝器14係提供用於避免此瑕疵性連接，且其具有足夠 彈性可施加均勻之平面式壓力於壓縮黏合表面。特別是， 矽橡膠材料、聚芳基醯胺帶、或一聚醯亞胺膜（例如艮丨.加 Pont製造之Kapt on)可用於此目的。 在加熱/加壓系統1〇上備有可以直接支承液晶顯示面板2〇 之支承塊1 5，及用於支承支承塊丨5之後援塊丨6。支承塊j 5 係由工業用之熔態矽土製成，且自下方投射之近紅外線％ 可傳輸通過支承塊1 5及可到達陣列基板23。工業用之熔態 石夕土應該可傳輸近紅外線36及具有低熱傳導性，例如 Pyrex(品牌名）即可適用於此目的。對於後援塊16而言，其 需使用具有良好熱傳導性與線性膨脹係數小之高剛性金 屬。 其次’將說明相關於一近紅外線投射系統3 〇。 近紅外線投射系統3〇包含：一燈具3 1，做為一近紅外線 36之光源；一反射型面鏡32，可接收及反射燈具31放射之 近紅外線36 ; —快門遮罩33，用於傳輸反射型面鏡32所反 射之光；一紅外線（1/R)單元控制器34，係控制燈具3丨之紅 外線36放射；及一熱交換器35。 自燈具3 1放射之近紅外線3 6係經過反射型面鏡3 2及支承 塊1 5而投射於陣列基板23與熱固性ACF 24。如文後所述， 近紅外線36較佳為具有8〇〇至1200 nm範圍之波長。在此實 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
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線 552651 A7 ______ B7 五、發明説明（15 ) 施例中’一石英紅外線鹵素燈使用做為燈具3丨，其燈絲設 於填充_素做為惰性氣體之熔態矽土燈泡中央。 具有抛物線狀表面之反射型面鏡32係反射由燈具3丨放射 之近紅外線3 6，如上所述，為了此原因，燈具3 1即設於反 射型面鏡32之一焦點上。 具有特定寬度之狹縫係設於快門遮罩33上，據此，僅有 通過諸狹縫之近紅外線36投射於陣列基板23。換言之，快 門遮罩33具有將近紅外線36僅投射於需要熱黏合之陣列基 板23部分上之功能。在此，快門遮罩33之狹縫形狀或尺寸 並然特別限制，其可依據需要熱黏合之部分之形狀及面積 而適當地設定。當然，複數不同之快門遮罩3 3可以因應於 黏合之物體而備便及更換。再者，對於快門遮罩33而言， 不及收紅外線之材料諸如不鏽鋼、|g、或一鍵鎳之玻璃皆 可使用。 I/R單元控制器34係用於產生近紅外線36且維持燈具3丨所 放射之近紅外線36輸出之裝置，為了此原因，I/；R單元控制 器34係結合一電源及一控制電路，供控制電流流入燈具3 i 之燈絲，以利取得適當之溫度構型。 熱父換器3 5係一冷卻系統，其將整個近紅外線投射系統 30結合於一循環式冷卻裝置。 其次，將說明相關於一冷卻系統，其用於冷卻由本實施 例總成裝置產生之熱。 冷卻系統包含冷卻喷嘴41a、41b、41c、一散熱器42及冷 卻鰭片43。 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 552651 A7 一 ___B7 五、發明説明（16 ) 冷部噴嘴41 a提供用於避免加熱器器具13所生之熱經過壓 力緩衝器14而傳導至偏光板26，再者，冷卻噴嘴41b、4U 提供用於避免近紅外線36投射於陣列基板23上所生之熱傳 導至濾色板25及偏光板26。當濾色板25及偏光板26加熱至 一指定溫度或較高時，變形或惡化即容易發生。此外，冷 部噴嘴亦有助於防止偏光板26以外之周邊組件受熱而惡 化。冷卻喷嘴41a、4lb、41c可以藉由自其頂端釋出冷卻氣 體而達成上述冷卻目的，釋出之氣體可為冷或常溫者，只 要此氣體可實現該目的即可。 散熱裔42提供用於避免近紅外線36投射於陣列基板23上 所生之熱傳導至陣列基板2 3下方之偏光板2 6。 再者’冷卻鰭片43提供用於將產生於近紅外線投射系統 3〇之熱散發至外界。 一冷卻孔44a設於加熱器器具13内，及冷卻孔44b、44c設 於支承塊15内，據此，冷卻孔44a至44c亦構成冷卻系統。 加熱器1§具13係藉由供給一冷卻媒體至冷卻孔44a而冷卻， 相似地’支承塊1 5藉由供給一冷卻媒體至冷卻孔44b、44c 而冷卻，；g人供給至冷卻孔、44b、44c之冷卻媒體並無特 別限制’惟’在考量於裝置之控制方便性與結構方便性上 則以空氣較佳。加熱器器具13之溫度係由一溫度感應器45a 偵測，及支承塊1 5之溫度係由一溫度感應器45b偵測。應該 注意的是利用溫度感應器45a、45b之溫度偵測可以在矽晶 片2 1或陣列基板23處做直接式溫度偵測，或透過加熱器器 具13或支承塊1 5做間接式溫度偵測。在加熱器器具丨3及支 -20- 本紙張尺度適財S 81家標準(CNS) A4規格(21〇 X 297公釐) 552651 A7 _ B7__ 五、發明説明（17 ) " 承塊15之溫度構型係依據來自溫度感應器45a、45b之溫度 資訊，藉由改變供給至冷卻孔44a、44b、44c之空氣流動速 度而控制，此溫度構型之控制則無法控制矽晶片2丨及陣列 基板23之溫度。 再者，冷卻孔44b、44c可抑制因為欲冷卻之矽晶片2 1快 速冷卻所致之陣列基板23與矽晶片2 1間之溫度差，亦即， 溫度差係受到陣列基板23之加速冷卻而抑制，因而解決了 會造成收縮差異之彎弧問題發生，容後詳述。 其次’本實施例之組裝過程將利用圖1以及圖2之流程圖 說明於後。 首先’組裝之主體及受體係設置於面板總成系統上，亦 即，液晶顯示面板20設置於支承塊15上，且為矽晶片21透 過熱固性ACF 24以放置在陣列基板23上之狀態。及裝接於 加壓塊11上之加熱器器具13容許透過壓力緩衝器14以接觸 於矽晶片21 (如圖2中之S101所示，其將應用於文後）。 其-人，加熱為器具1 3進行加熱，接著，石夕晶片2 1透過壓 力緩衝器14而以熱傳導方式加熱（如圖2中之sl〇2)，此加熱 可視為預熱。 藉由預熱矽晶片2 1，自矽晶片2丨至陣列基板23方向中之 溫度梯度即可減小。 此預熱係基於熱傳導式加熱，熱傳導式加熱可視為鄰置 於一熱物質之分子因為其熱能而激發產生熱之一種現象， 亦即，熱傳導式力口熱係因溫度自夕卜界轉矛多、或熱能轉移而 產生熱。 -21 - 本紙張尺度適財S S家標準(CNS) Μ規格(⑽χ挪公爱) 552651 A7 ______B7 ί、發明説明（18 ) ~" 本貫施例之熱傳導式加熱係構成矽晶片2丨之分子因為其 產生於加熱器器具13之熱能而激發產生熱，熱逐漸激勵相 鄰之分子，最後藉此加熱整個矽晶片21。此外，熱傳導係 自矽晶片21產生於熱固性ACF 24，藉此亦加熱熱固性ACF 24 〇 由於加熱器器具13之熱傳導式加熱係透過壓力緩衝器14 而執行，因此壓力緩衝器14亦受熱。熱傳導式加熱亦產生 於壓力緩衝14内，且熱可能散佈至整個壓力緩衝器14。 惟，在此實施例中，壓力緩衝器14係利用冷卻噴嘴41a釋出 之冷卻氣體而冷卻，據此，其可避免濾色板25上之偏光板 26因為加熱器器具丨3之熱傳導式加熱而導熱於壓力緩衝器 14所致之變形或惡化問題。 當矽晶片21到達一特定溫度時，近紅外線36即自燈具3 i 放射（如圖2中之S103)，自反射型面鏡32焦點處之燈具3丨放 射之近紅外線36係由反射型面鏡32反射及縮聚。反射及縮 聚之近紅外線36至陣列基板23之傳輸係由快門遮罩33截 斷’但是欲黏合之陣列基板23部分除外，且此投射可到達 陣列基板23。到達陣列基板之一部分近紅外線36係吸收於 陣歹j基板2 3内，同日^其他部分則進一步傳輸通過陣列基板 23且到達熱固性ACF 24。 在此’轄射熱係在近紅外線36投射於陣列基板23上後立 即產生，輻射熱可視為一分子結合因為某一類型電磁波（微 波）輻射至一物質上而鬆弛，造成分子激發產生熱之一種現 象，吾人已知電磁波之一波長係依據物質之分子結合結構 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 552651 A7 ______ B7 五、發明説明（19 ) 而採取一固有值。 在陣列基板23處產生之輻射熱可能傳導至近紅外線36所 投射部分以外之部分，惟，在此實施例中，此傳導之熱通 常係由散熱器42輻射且由冷卻噴嘴41 b、41 c釋出之冷卻氣 體予以冷卻。藉由執行上述熱輻射及冷卻，設於陣列基板 23下方之偏光板％可避免陣列基板23處產生之輻射熱造成 變形或燃燒。除了偏光板26，濾色板25亦可避免熱傳導所 致之惡化。 在此’本實施例之特徵在使用近紅外線36，習知熱固性 ACF顯不短波可見光或紫外線光之較高吸收率，惟，對於 一用於產生輻射熱之熱源而言，近紅外線光則較易於操作 及控制。再者，玻璃製成之陣列基板23處需產生熱，以利 抑制一熱梯度，基於此原因，本實施例即施加近紅外線； 特別是施加具有800至1200 nm波長範圍内之近紅外線36。 據此’傳輸通過陣列基板23且到達熱固性ACF 24之近紅外 線36產生輕射熱於熱固性aCF 24上，而有效率地加熱熱固 性 ACF 24。 其間，產生於陣列基板23之輻射熱係傳導至相鄰之熱固 性ACF 24 ,亦即，熱固性ACF 24係由來自陣列基板23之熱 傳導加熱。依此方式，熱固性ACF 24可以同時接收到由近 紅外線36投射之輻射熱及來自陣列基板23之熱傳導式加 熱。 如上所述，熱固性ACF 24係利用熱固性ACF 24本身產生 之輻射熱及來自陣列基板23之傳導熱而加熱（如圖2中之 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 552651
SI 04)。當熱固性ACF 24加熱至一特定溫度時，近紅外線％ 之投射即終止。 其次’石夕晶片2 1及陣列基板23係藉由加壓塊丨丨施加壓力 於石夕晶片2 1而黏合（如圖2中之s 1 〇 5)。 Ik後’矽晶片2 1、熱固性ACF 24及陣列基板23經過多次 冷部至室溫（如圖2中之S 106)。此時，矽晶片2 1及構成陣列 基板23之玻璃即相關於溫度而具有大致相同之收縮度，因 此，收縮度可呈均一，除非發生溫度差異。據此，在冷卻 過程中’石夕晶片2 1及陣列基板23之間發生之溫度差異即受 到抑制，以利於其間達成均一之收縮度。 熱固性ACF 24固化後，矽晶片21及陣列基板23係因為熱 固性ACF 24内所含之導電性粒子而相互導電。 依本實施例所示’儘管矽晶片2 1已做預熱，但是產生於 陣列基板23之輻射熱仍用於加熱熱固性acf 24，藉此抑制 自石夕晶片2 1至陣列基板23方向中之溫度梯度，此將參考圖 3 A至3 C詳細說明於後。 由於輻射熱係藉由近紅外線36之投射而產生於陣列基板 23本身内’因此陣列基板23在厚度方向中之溫度梯度即不 致發生’或者僅以輕微程度發生。假設不發生溫度梯度時 陣列基板23之二表面上之溫度係以丁 1表示，如圖3 a所示， 再者，由於熱固性ACF 24係由傳輸通過陣列基板23之近紅 外線3 6之輻射熱及進一步由陣列基板23之傳導熱加熱，故 其溫度可視為相等於陣列基板2 3之溫度。易言之，熱固性 ACF 24之一表面之溫度變成T1。此外，由於碎晶片21係做 -24- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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線 552651 A7 __B7 五、發明説明（21 ) 預熱，其可設定一預熱溫度T 2 ,使τ 1與T 2之間差異達到最 小。在此，由於熱傳導亦自熱固性ACF 24發生至矽晶片 2 1 ’預熱溫度應考量傳導熱加熱於石夕晶片2 1而設定。 如上所述’自石夕晶片2 1至陣列基板2 3方向中之溫度梯度 可以利用加熱态器具13預熱石夕晶片2 1及利用熱固性a c F 2 4 本身之輻射熱進行加熱，及利用根據陣列基板23輻射熱之 傳導熱而減小。 反之’ 一較大之溫度梯度會在習知方法中發生於自矽晶 片121至陣列基板123之方向中，因為此習知方法僅使用加 熱器器具111之傳導熱。 圖3 B係視圖’揭不加熱後之一冷卻過程。 在冷卻之初期階段中，如圖3 a所示，自石夕晶片2 1至陣列 基板23方向中之溫度梯度小，且藉由減小文後所述冷卻過 程期間石夕晶片2 1與陣列基板2 3之間之溫度差異，石夕晶片2工 之收縮程度及陣列基板23者即可視為相等，如圖3B之箭頭 所示。 §收^程度相等時，陣列基板2 3與組裝於其上之石夕晶片 21發生之彎弧情形即得以抑制，如圖3C所示。 其次，加熱時矽晶片21、熱固性ACF 24及陣列基板23之 行為將依據圖4A至4E詳細說明於後。 在圖4A至4E中，白色箭頭代表熱傳導之方向，及點狀箭 頭代表近紅外線36。同樣地，個別組件之顏色代表溫度， 且較暗顏色代表較高溫度。 首先，如圖4A所示，矽晶片21及熱固性ACF以係利用來 -25-
552651 A7 _ B7 五、發明説明（22 ) " ' 自加熱器器具1 3之傳導熱而預熱。 其次，如圖4B所示，陣列基板23係因近紅外線36投射所 生之輻射熱而自行加熱。此外，如圖4C所示，熱固性ACF 24係因傳輸通過陣列基板23之近紅外線36所生輻射熱而自 行加熱。再者，如圖4D所示，熱固性ACF 24係藉由自行加 熱之陣列基板23所生之熱傳導而加熱。 在此情況中，如圖4E所示，其發生自熱固性acF 24至石夕 晶片21之熱傳導，且矽晶片21亦由此傳導熱而加熱至一特 定溫度。 在此，由於矽晶片21之溫度係比構成陣列基板23之玻璃 更易於幵咼’因此加熱石夕晶片2 1至特定溫度即比加熱陣列 基板2 3更有效率。據此，為了減小自石夕晶片2 1至陣列基板 23之溫度梯度’石夕晶片21利用加熱器器具13所做之預熱即 有效於增進溫度梯度抑制之效果。 再者，利用陣列基板23之傳導熱、熱固性ACF 24之自行 加熱及加熱器器具13之預熱總體上即可達成極有效率、均 勻之加熱。 在此實施例中，利用加熱器器具13之預熱需要比僅以加 熱器器具111加熱於熱固性ACF 24之習知例子者更低溫度， 且冷卻亦使用冷卻喷嘴41a執行，藉此抑制偏光板％上之負 面熱效應。此外，提供冷卻喷嘴41b、41c、散熱器42、及 冷卻孔44a、44b、44c有助於將液晶顯示面板2〇上之負面熱 效應減至最小。又者，提供壓力緩衝器丨4有助於矽晶片2工 均勻加壓於陣列基板23上。 -26- I紙張尺度適用中國國家標準(CNS) A4規格(210X297公董)__ 552651 A7 ___B7_ 五、發明説明（23 ) ' 其次，冷卻時之行為將參考圖5A至5(：詳細說明於後。 如上所述，儘管熱固性樹脂具有加熱固化之特徵，但是 此固化不需要緊隨於固化反應開始之後。在加熱至一特定 溫度固化點後之一冷卻過程期間，熱固性樹脂維持某些程 度之撓性，且在一玻璃過渡溫度及其以下之溫度範圍内達 成完全固化。因此，在玻璃過渡溫度以上之溫度範圍内， 不致發生圖7所示之彎弧，或者僅以輕微程度發生。反之， 彎弧會在玻璃過渡溫度及其以下之溫度範圍内變得明顯。 再者，冷卻過程期間矽晶片2 1與陣列基板23之間之溫度差 異在本實施例中極為重要。 在圖5A至5C中，貫線輪廓之箭頭代表由加熱器器具η輔 熱’及虛線輪廓之前頭代表由冷卻孔4 4 b、4 4 c冷卻。相似 於圖4，個別組件之顏色代表溫度，且較暗顏色代表較高溫 度。 首先，如圖5A所示，矽晶片21、熱固性ACF 24及陣列基 板23已加熱至一最大加熱溫度，在此，若其欲冷卻，則石夕 晶片21之冷卻會因為其比熱而進行較快於陣列基板23者。 據此，矽晶片2 1及陣列基板23之間之收縮程度差異即發 生，且造成一彎弧。因此，在本實施例中，矽晶片2丨係由 加熱器器具13加熱，以避免矽晶片21快速冷卻，此一加埶 4、、、 即稱為輔熱。另方面，由玻璃製成之陣列基板23則比矽晶 片21更慢冷卻，據此，陣列基板23之冷卻即藉由空氣流過 冷卻孔44b、44c而加速，且其與矽晶片2 1之溫度差異受到 抑低。 -27- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 552651 A7 ___B7 五、發明説明（24 ) 矽晶片21、熱固性ACF 24及陣列基板23之冷卻係如圖5B 所示地進行，同時執行矽晶片2 1之輔熱及陣列基板23之加 速冷卻以抑低上述溫度差異。當藉由加速冷卻及持續輔熱 以抑低溫度差異時，矽晶片2 1、熱固性ACF 24及陣列基板 23即冷卻至室溫，如圖5C所示。 依此方式，本實施例可避免發生彎弧，因為在冷卻過程 期間有抑低矽晶片2 1及陣列基板23之間溫度差異之處理， 其較佳為使此溫度差異實際上達到零。 在上述貫施例中，由石夕晶片2 1之輔熱及陣列基板23之加 速冷卻組成之溫度差異抑低處理係在整個冷卻過程中執 行。惟，由先前說明中可以瞭解，特別重要的是控制玻璃 過渡溫度及其鄰近溫度，因為構成熱固性acf 24之熱固性 树脂會在冷卻過程中終止固化反應。據此，溫度差異抑低 處理在遠高於玻璃過渡溫度以上之溫度範圍内即無必要。 雖然如此，一旦發生過大之溫度差異時其則不易抑低溫度 差異；因此，仍有必要從本實施例開始時即執行溫度差異 抑低之處理。 從開始％即執行之溫度控制係有助於在冷卻至玻璃過渡 溫度之過程期間達成矽晶片21及陣列基板23之均勻收縮， “更有助於在玻璃過渡溫度或以下時達成矽晶片2 1及陣列 基板23之均勻收縮。 此外，儘管上述實施例採用矽晶片21及陣列基板23做為 黏合構件之例子，但是本發明並不侷限於前述實例，而是 可以廣泛適用於由其他材料組成之構件。
552651
如上所述，依本發明所示，彎弧 吓不弓狐之發生可因為減小個別 黏合構件中之溫度梯度而抑低。再去 ^ _ 又阳幵低丹者，熱固性樹脂之固化 反應可以利用輻射熱及近紅外線投射所生之傳導熱而加 速。 但是應該瞭解的是 明精神範疇下，其 儘管本發明之較佳實施例已做詳述， 在不脫離文後申請專利範圍定義之本發 仍可達成多種變化、替代及變換。 -29-

Claims (1)

  1. 申請專利範
    〗·—種黏合方法，包含以下步驟： ，置熱固性樹脂於_第_構 藉由電磁波投射5# 弟一構件之間；及 固性樹脂，以黏合”構固：樹脂上而加熱及固化該熱 其中該第二構; 分該電磁波且可傳輸另電磁波投射時可吸收-部 專輸#邛为之材料組成，及 :射至该弟二構件上之該電磁波係 且投射至該熱U性樹脂上。 ^弟-構件 2.如申請專利範圍第i項之# ,. ^^ L 其中稭由吸收投射 射電磁波而產生於該第二構件處之轄 射…係傳導至該熱固性樹脂，以利加熱該熱固性樹脂。 1如中請㈣範圍Ρ項之黏合方法’其中輕射熱係藉由 傳輸通過該第二構件且投射至該熱固性樹脂之該電磁波 而產生於該熱固性樹脂。 4.如申請專利範圍第丨項之黏合方法，其中該電磁波係近 紅外線。 5.如申請專利範圍第1項之黏合方法，其中該電磁波係在 該第一構件加熱至一特定溫度後才投射於該熱固性樹 脂0 6· —種黏合方法，包含以下步驟： 經由熱固性樹脂以放置另一構件於一玻璃基板上； 將具有800至1200 nm波長範圍内之近紅外線透過該玻 璃基板以投射至该熱固性樹脂上；及 冷卻及固化藉由該近紅外線投射而加熱之該熱固性樹 -30- \紙張尺度適用中國國家標準(CNS) A4规格⑽x 297公釐) 552651 A8 B8 C8 D8 六、申請專利範圍 7. 如申請專利範圍第6項之黏合方法， 其中該近紅外線投射該玻璃基板， 該玻璃基板係藉由吸收一部分該投射之近紅外線而$ 行自行加熱，及 該近紅外線之另一部分係傳輸通過該玻璃基板且照射 該熱固性樹脂。 8. —種黏合方法，包含以下步驟： 構件之間； 配置熱固性樹脂於一第一構件及一第 加熱該熱固性樹脂以供固化；及 冷卻該已加熱之熱固性樹脂， 其中一溫度差異抑低處理係在該冷卻步驟期間執行 以抑低該第一構件及該第二構件之間之一溫度差異。 9·如申請專利範圍第8項之黏合方法，其中該溫度差異和 低處理係藉由在該冷卻步驟期間執行抑制該第一 P 該第二構件任一者之冷卻。 及 10.如申請專利範圍第8項之黏合方法，其中該溫度差 低處理係藉由在該冷卻步驟期間執行該一 、 -^ Aik AX. ^ L + 構件及該第 一構件任一者之加速冷卻。 11·如申請專利範圍第8項之黏合方法， 及其中偵測相關於該第一構件及/或該第二構件之溫度， U差異#⑻處理係根據該冷卻步驟 件及/或該第二構件之偵測溫度而執行。/ 一冓 12·如申請專利範圍第8項之黏合方法， 二該冷卻步驟加速冷卻該第-構件及該第二構件中 具有較大熱量之構件，及 該冷卻步驟抑制；^ S $ _冷部5亥弟-構件及該第二構件中具有 季父小熱量之構件。 利範圍第8項之黏合方法，其中在該冷卻步驟 ▲"皿度ϋ異抑低處理係有助於從在該加熱步驟中昇 度至該熱固性樹脂之玻璃過渡溫度之溫度範圍 内’達成該第—構件及該第二構件之均勻收縮。 Η.;種：合裝置，係藉由加熱及固化—由熱固性樹脂組成 冰 W仃黏°第一構件及-做為黏合受體之第 一構件，該黏合裝置包含： =光源，係產生近紅外線以供加熱該黏合劑； =承基座’具有—近紅外線傳輸區，可傳輸由該光 源產生之該近紅外線且支承該黏合受體； 一加熱器，用於加熱該第一構件及/或該第二構件；及 -冷卻系統，用於冷卻該第一構件及/或該第二構件。 15.如申請專利範圍第14項之黏合裝置，其中傳輪通過該支 承基座之邊近紅外線傳輸區的近紅外線投射於竽黏A 劑’且該黏合劑係、利用該投射所產生之輻射熱而力^ 16·如申請專利範圍第14項之黏合裝置， 其：：近紅外線係在該黏合劑配置於該第—構件及該 第一構件之間之狀態中投射於該熱固性樹脂，該第二構 件係由一可傳輸該近紅外線之材料組成，及 Λ 一 -32- 552651 申請專利範圍 該第二構件設置於該支承基座之一表面上，且傳輸通 過該支承基座之該近紅外線傳輸區的近紅外線係進:步 傳輸通過該第二構件以投射於該熱固性樹脂，該熱固^ 樹脂係利用該投射所產生之輻射熱而加熱。 17. —種利用熱固性樹脂以黏合一矽晶片及—玻璃基板之黏 合方法，該黏合方法包含以下步驟： 將熱固性樹月曰配置於一碎晶片及一玻璃基板之門· 加熱該矽晶片至一特定溫度； 將近紅外線投射至該玻璃基板上，且利用該玻璃基板 及傳輸通過該玻璃基板之近紅外線加熱該熱固性樹脂； 及 ， 訂 冷部該受熱之矽晶片、該熱固性樹脂及該玻璃基板， 以抑低該矽晶片及該玻璃基板之間之一溫度差異於一特 定之溫度範圍内。 18·如申請專利範圍第17項之黏合方法，其中該特定之溫度 範圍係在該熱固性樹脂之一固化反應終止時之溫度附 近0 19·如申請專利範1[第17項之黏合方法，其中在該冷卻步驟 中該矽晶片之冷卻係經抑制且該玻璃基板之冷卻係經加 速，以抑低該矽晶片及該玻璃基板之間之一溫度差昱。 2〇·如申請專利範圍第17項之黏合方法，其中該矽晶片及該 玻璃基板之間之該溫度差異係在該熱固性樹脂之固化反 應終止時之溫度附近實際上達到零。 -33- 巧張尺度適财國a家標準(CNS) A4規格(2ι〇χ 297公釐）
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