KR100873286B1 - 실리콘 잉곳의 마운팅 장치 및 그 방법 - Google Patents
실리콘 잉곳의 마운팅 장치 및 그 방법 Download PDFInfo
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- KR100873286B1 KR100873286B1 KR1020060138662A KR20060138662A KR100873286B1 KR 100873286 B1 KR100873286 B1 KR 100873286B1 KR 1020060138662 A KR1020060138662 A KR 1020060138662A KR 20060138662 A KR20060138662 A KR 20060138662A KR 100873286 B1 KR100873286 B1 KR 100873286B1
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- South Korea
- Prior art keywords
- silicon ingot
- adhesive member
- mounter
- light emitting
- light
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000000853 adhesive Substances 0.000 claims abstract description 65
- 230000001070 adhesive effect Effects 0.000 claims abstract description 65
- 238000003825 pressing Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 239000012141 concentrate Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (11)
- 프레임;상기 프레임에 놓여져 실리콘 잉곳이 장착되는 마운터;상기 실리콘 잉곳을 상기 마운터 방향으로 가압할 수 있도록 상기 프레임에 이동 가능하게 설치된 가압부재; 및상기 실리콘 잉곳과 상기 마운터 사이에 개재된 접착부재에 빛을 조사할 수 있도록 배치된 발광부재를 구비하는 것을 특징으로 실리콘 잉곳의 마운팅 장치.
- 제1항에 있어서,상기 발광부재로부터 발산되는 빛이 상기 접착부재에 집중시킬 수 있도록 상기 발광부재의 측면에 설치된 반사부재를 더 구비하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 장치.
- 제1항 또는 제2항에 있어서,상기 발광부재는 적외선 램프를 구비하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 장치.
- 제3항에 있어서,상기 적외선 램프는 상기 실리콘 잉곳의 양측에 길이 방향으로 각각 배치되 는 것을 특징으로 하는 실리콘 잉곳의 마운팅 장치.
- 삭제
- 제1항 또는 제2항에 있어서,상기 마운터는 상기 접착부재에 의해 상기 실리콘 잉곳이 접촉되는 마운터 빔과, 제2 접착부재에 의해 상기 실리콘 잉곳과 대향되도록 상기 마운터 빔에 접촉되는 작동 플레이트를 구비하고,상기 발광부재는 상기 접착부재 및 상기 제2 접착부재 모두를 조사할 수 있는 것을 특징으로 하는 실리콘 잉곳의 마운팅 장치.
- 실리콘 잉곳의 마운팅 방법에 있어서,(a) 상기 실리콘 잉곳과 마운터 사이에 접착부재를 개재시키는 단계; 및(b) 발광부재를 이용하여 상기 접착부재에 소정 시간 동안 빛을 조사하는 단계;를 포함하는 것을 특징으로 실리콘 잉곳의 마운팅 방법.
- 제7항에 있어서,상기 (b) 단계는 상기 발광부재로부터 조사되는 빛을 상기 접착부재에 집중시킬 수 있도록 상기 빛을 집중시키는 단계를 더 포함하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 방법.
- 제7항 또는 제8항에 있어서,상기 (b) 단계는 적외선 램프를 이용하여 빛을 조사하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 방법.
- 제7항 또는 제8항에 있어서,상기 (b) 단계는 상기 실리콘 잉곳의 양측에 길이 방향으로 각각 배치된 발광부재를 이용하여 상기 접착부재의 양측을 동시에 조사하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 방법.
- 제7항 또는 제8항에 있어서,상기 마운터는 상기 접착부재에 의해 상기 실리콘 잉곳이 접착되는 마운터 빔과, 상기 실리콘 잉곳과 대향되도록 배치된 작동 플레이트를 구비하고,상기 (a) 단계는 제2 접착부재를 이용하여 상기 작동 플레이트와 상기 마운터 빔을 접착시키는 단계를 더 포함하고,상기 (b) 단계는 상기 접착부재 및 상기 제2 접착부재 모두에 상기 발광부재의 빛을 조사하는 것을 특징으로 하는 실리콘 잉곳의 마운팅 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060138662A KR100873286B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 잉곳의 마운팅 장치 및 그 방법 |
US12/001,496 US20080156430A1 (en) | 2006-12-29 | 2007-12-11 | Apparatus and method for mounting silicon ingot to mounter |
JP2007326448A JP2008166767A (ja) | 2006-12-29 | 2007-12-18 | シリコンインゴットのマウンティング装置及びその方法 |
CNA2007103060875A CN101274460A (zh) | 2006-12-29 | 2007-12-28 | 用于将硅晶块固定到固定器上的装置和方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060138662A KR100873286B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 잉곳의 마운팅 장치 및 그 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20080062637A KR20080062637A (ko) | 2008-07-03 |
KR100873286B1 true KR100873286B1 (ko) | 2008-12-11 |
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KR1020060138662A KR100873286B1 (ko) | 2006-12-29 | 2006-12-29 | 실리콘 잉곳의 마운팅 장치 및 그 방법 |
Country Status (4)
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US (1) | US20080156430A1 (ko) |
JP (1) | JP2008166767A (ko) |
KR (1) | KR100873286B1 (ko) |
CN (1) | CN101274460A (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101064268B1 (ko) * | 2011-04-05 | 2011-09-14 | 한국생산기술연구원 | 와이어소에 설치되는 웨이퍼지지장치 |
CN102225599B (zh) * | 2011-04-25 | 2014-07-16 | 镇江荣德新能源科技有限公司 | 一种多晶硅锭与托盘的粘接方法 |
JP6026927B2 (ja) * | 2013-03-14 | 2016-11-16 | 京セラ株式会社 | 半導体基板の製造方法 |
CN103273580A (zh) * | 2013-06-05 | 2013-09-04 | 英利能源(中国)有限公司 | 线锯及其托盘 |
CN104128999A (zh) * | 2014-07-24 | 2014-11-05 | 江苏美科硅能源有限公司 | 一种粘棒工装 |
CN104943001A (zh) * | 2015-07-08 | 2015-09-30 | 常州市金海基机械制造有限公司 | 一种大理石切割机 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19990082807A (ko) * | 1998-04-01 | 1999-11-25 | 다구마시로오 | 잉곳슬라이스방법,잉곳제조방법및슬라이스된잉곳의연마장치 |
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JP4392732B2 (ja) * | 2000-02-07 | 2010-01-06 | リンテック株式会社 | 半導体チップの製造方法 |
JP2001308145A (ja) * | 2000-04-25 | 2001-11-02 | Fujitsu Ltd | 半導体チップの実装方法 |
JP2001313274A (ja) * | 2000-04-28 | 2001-11-09 | Nippei Toyama Corp | ウエーハの回収方法 |
JP3627011B2 (ja) * | 2001-02-13 | 2005-03-09 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 接合方法 |
JP2005047213A (ja) * | 2003-07-31 | 2005-02-24 | Komatsu Electronic Metals Co Ltd | 単結晶インゴットとスライス台の接着装置及び接着方法 |
JP4388362B2 (ja) * | 2003-12-22 | 2009-12-24 | 京セラ株式会社 | 半導体インゴットの切断方法 |
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2006
- 2006-12-29 KR KR1020060138662A patent/KR100873286B1/ko active IP Right Grant
-
2007
- 2007-12-11 US US12/001,496 patent/US20080156430A1/en not_active Abandoned
- 2007-12-18 JP JP2007326448A patent/JP2008166767A/ja active Pending
- 2007-12-28 CN CNA2007103060875A patent/CN101274460A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990082807A (ko) * | 1998-04-01 | 1999-11-25 | 다구마시로오 | 잉곳슬라이스방법,잉곳제조방법및슬라이스된잉곳의연마장치 |
Also Published As
Publication number | Publication date |
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JP2008166767A (ja) | 2008-07-17 |
CN101274460A (zh) | 2008-10-01 |
US20080156430A1 (en) | 2008-07-03 |
KR20080062637A (ko) | 2008-07-03 |
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