TW200847874A - A method of packaging body, packaging body and substrate - Google Patents

A method of packaging body, packaging body and substrate Download PDF

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Publication number
TW200847874A
TW200847874A TW097105261A TW97105261A TW200847874A TW 200847874 A TW200847874 A TW 200847874A TW 097105261 A TW097105261 A TW 097105261A TW 97105261 A TW97105261 A TW 97105261A TW 200847874 A TW200847874 A TW 200847874A
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TW
Taiwan
Prior art keywords
package
heat
heat generating
substrate
laser light
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TW097105261A
Other languages
Chinese (zh)
Inventor
Eisaku Kojima
Takehiko Wada
Original Assignee
Omron Tateisi Electronics Co
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Publication of TW200847874A publication Critical patent/TW200847874A/en

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

This invention provides a packaging method, which can reduce the time of packaging by effectively heating the adhesive such as ACF, as well as restrain unnecessary heating of other element. The present invention provides a solution in which ACF 3 is placed between the IC chip 2 to be packaged and the glass substrate 1 where plural wires 6 are formed on it. To the effect that laser beams are radiated from the backside of glass substrate 1 to heat the ACF 3 in order to connect the electrode 6a of wiring 6 and the bump electrode 5 of IC 2 and finish packaging, a radiator body 9 which is used to absorb the laser beams and then radiates the heat is preformed on the packaging area of the IC chip 2 on substrate 1, the ACF 3 is then heated through the heating body 9.

Description

200847874 九、發明說明: 【發明所屬之技術領域】 本發明係有關將零件封裝於基板之封裝體的製造方法、 封裝體及甩於封裝的基板。 【先前技術】 '近年來,作爲個人用電腦、其他各種監測器用的畫像顯 示裝置,液晶顯示裝置等的平面板顯示器正在迅速地普及。 例如,液晶顯示裝置係由液晶面板、LCD驅動器、背面 光等的周邊構件所構成,液晶面板係於一對玻璃基板之各 個的表面上形成既定圖案的透明電極,透過夾著液晶將此 等的玻璃基板相互貼合所形成。在液晶顯示裝置係透過相 互對向之一對的透明電極形成畫素,在此等透明電極透過 LCD驅動器之1C晶片施加電壓建構成使畫像可視像化。 有關此LCD驅動器之1C晶片對於液晶面板的封裝方 法,從以前已知有種種的方法,其中有被稱爲C〇G(Chip On Glass)方式之方法。 第13圖係爲了說明COG方式之接合方法的剖面圖。 在玻璃基板5 0之上,被形成配線5 1,同時其端部成爲零 件連接用的電極部51a。被封裝在玻璃基板50之LCD驅動 器之1C晶片52的下面,被形成有凸塊電極53。 首先,在玻璃基板50上,貼附黏著劑,例如,ACF(Anisotropic Conductive Film)54,更在此ACF54上配置1C晶片52。其次, 藉由將被加熱到既定溫度之電熱器頭55對1C晶片52按 壓,把1C晶片52熱壓接在玻璃基板50上。如此,LCD驅 200847874 動器之1C晶片52被封裝在液晶面板的玻璃基板50」 在如此封裝方法,因爲係透過電熱器頭5 5,而藉由 片52加熱ACF54者,ACF54被加熱至熔融硬化需要床 同時從1C晶片52涵蓋到玻璃基板50產生温度斜度, 降低時,會發生所謂變形的課題。 因此,本案申請人,提案如第14圖所示,如箭頭符 示從玻璃基板50的背面側照射雷射光,藉由透過玻璃 50之雷射光直接把ACF54加熱使其熔融硬化,同時以 頭5 6加壓,而接合於玻璃基板5 0的方法(參考專利文肩 〔專利文獻1〕日本專利特開2006 — 25 3 665號公報 【發明內容】 〔發明所欲解決之課題〕 在上述所提案之方法,ACF54等之黏著劑的厚度, 薄到例如數十// m左右,所以被照射之雷射光不會充 被黏著劑吸收即透過,故對黏著劑的加熱效率尙有改 餘地。又,透過黏著劑之雷射光,也會被1C晶片52 零件所吸收使該零件不期望地被加熱之課題。 本發明係鑒於上述問題而達成者,其目的在於可將 等的黏著劑有效率的加熱以縮短封裝所需要的時間, 目的亦可抑制對於其他零件等不期望之加熱。 〔用以解決課題之手段〕 (1)本發明之封裝體的製造方法,係將含有熱反應性 之黏著劑,介於形成有複數配線的基板與欲封裝於該 的零件之間,藉由雷射光之照射,加熱該黏著劑將該 1C晶 F間, 温度 號所 基板 加壓 尤1 )。 因爲 分地 善的 等的 ACF 同時 樹脂 基板 配線 200847874 電極部與該零件的電極連接所成之封裝體的製造方法,而 在該基板之該零件被封裝的封裝區域,預先形成可吸收該 雷射光而發熱的發熱體,透過該發熱體之發熱,對吸收該 雷射光而直接加熱的該黏著劑,增加該直接加熱以外的加 熱量。 在此’作爲被形成配線的基板,以容易透過雷射光的基 板較理想,此基板包含玻璃基板、薄膜基板、可撓性基板、 或砂基板等。 零件則包含1C或電晶體等的主動零件、電阻器或電容器 等的被動零件、抑或基板或連結器等的補助零件等。 含有熱反應性樹脂之黏著劑,則包含ACFUnisotropic Conductive Film)或 ACP(Anisotropic Conductive Paste)等的 異方導電性黏著劑,抑或NCF(Non Conductive Film)或 NCP(Non Conductive Paste)等的非導電性黏著劑。 雷射光雖從與基板之封裝面的相反側照射較理想,但作 爲基板,使用雷射光不易透過之印刷配線基板的情况,亦 可從印刷配線基板的封裝面側照射。 所謂封裝區域係指零件被封裝的區域,亦指基板與零件 重疊的區域。 黏著劑介於的區域,係與封裝區域相同,或稍、大較理 想,亦可較小。 發熱體至少形成於封裝區域即可,亦可跨越封裝區域外 形成。 發熱體係由吸收雷射光而容易發熱之材料m g $較理 200847874 想’例如銘或銅等較佳。 發熱體係透過吸收雷射光而隨著發熱,以加熱黏著劑 者,黏著劑本身係吸收雷射光而直接加熱以外間接地(補 助的)增加加熱量。 因此,透過發熱體之發熱,從基板側將黏著劑間接地加 熱之加熱量,係與以前的比較變爲增大。 此發熱體可與配線完全分離,亦可與配線的一部分,例 如,亦可與接地配線等連接。 發熱體係可連續的形狀,亦可分離成爲複數的島狀。 發熱體係被形成於配線之電極部附近較理想,亦可形成 進入於複數的電極部之間。 發熱體係可與配線同一製程形成,亦可以另外的製程形 成。 根據本發明時,基板的封裝區域,即,黏著劑介於之區 域,因爲預先形成吸收雷射光而發熱之發熱體,所以一旦 照射雷射光時,基板上之發熱體將吸收雷射光而發熱,由 於加熱在其上方的黏著劑,黏著劑有效率地被加熱而熔融 硬化,與習知的比較可縮短封裝所需要的時間。 又,藉由從基板之封裝面的相反側照射雷射光,雷射光 被基板上之發熱體所吸收的分,將減少透過黏著劑之雷射 光,所以被封裝之零件可抑制藉由透過黏著劑之雷射光不 期望之加熱。 (2)在本發明之封裝體的製造方法之一個實施形態,該發 熱體係可從該配線孤立所形成。 200847874 ·' 在配線係包含連接於零件之電極的電極部,電極部較理 想係在配線的端部。 所謂從配線孤立,係指分離而不與配線相連接。 根據此實施形態時,由於發熱體係被從配線分離所形 ' 成,所以從吸收雷射光而發熱之發熱體的熱,防止藉由配 線圖案而向封裝區域外放熱,可將黏著劑有效率地加熱。 (3) 在本發明之封裝體的製造方法之另外的實施形態,在 該封裝區域中,該發熱體所形成的部分之投影面積的總 f ' % 和,亦可在該封裝區域中該配線所形成之部分的投影面積 總和的3倍以上。 發熱體所形成的部分之投影面積的總和之上限,成爲在 封裝區域之配線所形成之部分以外的幾乎整體形成發熱體 之情况的投影面積的總和。 根據此實施形態時,因爲在封裝區域中發熱體所佔的面 積大,所以發熱體吸收雷射光而發熱之熱量大’因此’可 充分確保加熱黏著劑的加熱量。 („ (4) 在本發明之封裝體的製造方法之更其他的實施形 態,該發熱體亦可與該封裝區域外之其他的零件作電性地 分離。 所謂與其他零件作電性地分離,係指發熱體未與其他零 件作電性的連接。 根據此實施形態時,因爲發熱體未與封裝區域外其他零 件作電性的連接,所以從吸收雷射光而發熱之發熱體的 熱,可抑制向封裝區域以外放熱,而可有效率地加熱黏著 200847874 在配線係包含連接於零件之電極的電極部,電極部較理 想係在配線的端部。 所謂從配線孤立,係指分離而不與配線相連接。 根據此實施形態時,由於發熱體係被從配線分離所形 成,所以從吸收雷射光而發熱之發熱體的熱,防止藉由配 線圖案而向封裝區域外放熱,可將黏著劑有效率地加熱。 (3) 在本發明之封裝體的製造方法之另外的實施形態,在 該封裝區域中,該發熱體所形成的部分之投影面積的總 和,亦可在該封裝區域中該配線所形成之部分的投影面積 總和的3倍以上。 發熱體所形成的部分之投影面積的總和之上限,成爲在 封裝區域之配線所形成之部分以外的幾乎整體形成發熱體 之情况的投影面積的總和。 根據此實施形態時,因爲在封裝區域中發熱體所佔的面 積大,所以可充分確保發熱體吸收雷射光而發熱之發熱 量,即,加熱黏著劑的加熱量。 (4) 在本發明之封裝體的製造方法之更其他的實施形 態,該發熱體亦可與該封裝區域外之其他的零件作電性地 分離。 所謂與其他零件作電性地分離,係指發熱體未與其他零 件作電性的連接。 根據此實施形態時,因爲發熱體未與封裝區域外其他零 件作電性的連接,所以從吸收雷射光而發熱之發熱體的 熱,可抑制向封裝區域以外放熱’而可有效率地加熱黏著 200847874 光,所以被封裝之零件藉由透過黏著劑之雷射光可抑制不 期望之加熱。 (7) 在本發明之封裝體之一個實施形態,該發熱體係可從 該配線孤立所形成。 ‘ 根據此實施形態時,由於發熱體係從配線被分離所形 * 成,所以從吸收雷射光而發熱之發熱體的熱,防止藉由配 線圖案而向封裝區域外放熱,可將黏著劑有效率地加熱。 (8) 在本發明之封裝體的其他實施形態,在該封裝區域 f ^ 中,該發熱體所形成的部分之投影面積的總和,亦可在該 封裝區域中該配線所形成之部分的投影面積總和的3倍以 上。 根據此實施形態時,因爲在封裝區域中發熱體所佔的面 積大,所以可充分確保發熱體吸收雷射光而發熱之發熱量 大,即,加熱黏著劑的加熱量。 (9) 在本發明之封裝體的更其他實施形態,該發熱體亦可 & 與該封裝區域外之其他零件作電性地分離。 ' 根據此實施形態時,因爲發熱體未與封裝區域外其他零 件作電性的連接,所以從吸收雷射光而發熱之發熱體的 熱,可抑制向封裝區域以外放熱,而可有效率地加熱黏著 劑。 (1 0)在本發明之封裝體的一實施形態,複數之該等配線 的各電極部,分別被配置在該封裝區域的周邊部,該發熱 體亦可形成在比該封裝區域之該各電極部的最外位置更內 面0 -11- 200847874 根據此實施形態時,因爲在封裝區域之周邊部的各電極 部的更內面形成發熱體,所以發熱體在封裝區域之中央部 有效率地吸收雷射光而發熱,而可將黏著劑有效率地加熱。 (11)本發明之基板係形成有複數條配線,而藉由含有熱 反應性樹脂之黏著劑,該配線的電極部與被封裝之零件的 電極被連接,而該零件爲被封裝的基板,其中,在該零件 被封裝之封裝區域,形成可吸收雷射光而發熱的發熱體, 透過該發熱體之發熱,對吸收該雷射光而直接加熱之該黏 ^ 著劑,增加該直接加熱以外的加熱量。 根據本發明時,在基板的封裝區域,形成可吸收雷射光 而發熱的發熱體,所以照射雷射光時,基板上之發熱體將 吸收雷射光而發熱,黏著劑有效率地被加熱而熔融硬化, 可縮短封裝所需要的時間。 又,藉由從與基板之封裝面的相反側照射雷射光,雷射 光被基板上之發熱體吸收的分,將減少透過黏著劑之雷射 光,所以被封裝之零件藉由透過黏著劑之雷射光可抑制不 期望之加熱。 (1 2)在本發明之基板的一實施形態,該發熱體係從該配 線孤立所形成。 根據此實施形態時,由於發熱體係從配線被分離所形 成,所以從吸收雷射光而發熱之發熱體的熱,防止藉由配 線圖案而向封裝區域外放熱,可將黏著劑有效率地加熱。 (1 3)在本發明之基板的其他實施形態,在該封裝區域中 該發熱體所形成的部分之投影面積的總和,亦可#胃封* ^ -12· 200847874 區域中該配線所形成的部分之投影面積總和的3倍以上。 根據此實施形態時,因爲在封裝區域中發熱體所佔的面 積大,所以可充分確保發熱體吸收雷射光而發熱之發熱量 大,即,加熱黏著劑的加熱量。 (1 4)在本發明之基板的更另外的實施形態,該發熱體亦 可與該封裝區域外之其他零件作電性地分離。 根據此實施形態時,因爲發熱體未與封裝區域外其他零件 作電性地連接,所以從吸收雷射光而發熱之發熱體的熱,可 抑制向封裝區域以外放熱,而可有效率地加熱黏著劑。 (1 5)在本發明之基板的一個實施形態,複數之該等配線 的各電極部,分別被配置在該封裝區域的周邊部,該發熱 體亦可形成在比該封裝區域之該各電極部的最外位置更內 面。 根據此實施形態時,因爲在封裝區域之周邊部的各電極 部的更內面形成發熱體,所以發熱體在封裝區域之中央部 有效率地吸收雷射光而發熱,可將黏著劑有效率地加熱。 〔發明效果〕 根據本發明,當照射雷射光時,基板上之發熱體將吸收 雷射光而發熱,由於加熱在其上方的黏著劑,黏著劑有效 率地被加熱而熔融硬化,與習知的比較可縮短封裝所需要 的時間。 又,藉由從基板之封裝面的相反側照射雷射光,雷射光 被基板上之發熱體吸收的分,將減少透過黏著劑之雷射 光,所以被封裝之零件藉由透過黏著劑之雷射光可抑制不 200847874 期望之加熱。 〔發明之最佳實施形態〕 以下,透過圖式詳細說明有關本發明之實施形態。 〔第1實施形態〕 在此實施形態,例如,第1圖的槪略圖所示,在液晶面 板之一方的玻璃基板1上,有將L C D驅動器的IC晶片2 使用ACF3透過COG方式封裝者。在此封裝之時,如第2 圖的剖面圖所示,從玻璃基板1的背面側如箭頭符號所示 照射雷射光加熱ACF3使其熔融硬化,同時藉由後述之加 壓頭1 3予以加壓,使1C晶片2的複數個凸塊電極5,與玻 璃基板1上之複數配線6的端部之電極部6a連接,據此, 可獲得如第3圖的封裝體7者。 在此實施形態,透過雷射光的照射,將ACF3有效率地 加熱使封裝所需要的時間縮短,同時爲了不使1C晶片2等 作不期望之加熱,建構成如次。 即,在玻璃基板1上,如第4圖的立體圖也有顯示,在 1C晶片2被封裝之以虛線表示的矩形封裝區域8,預先被 形成有發熱體9,用以藉由吸收雷射光而發熱以加熱ACF3。 在玻璃基板1上的矩形封裝區域8,沿著其相對之長邊, 對應於DIP型之1C晶片2的複數個凸塊電極5,被排列形 成有複數個電極部6a。發熱體9在相對之複數個電極部6a 之間,被形成從配線6孤立之矩形圖案。 藉由使成如此孤立的圖案,從吸收雷射光之發熱體9的 發熱,不會藉由配線6的圖案放熱到封裝區域8之外,而 -14- 200847874 可將發熱體9上之AC F3有效率地加熱。 發熱體9爲了確保由於吸收雷射光之充分的發熱量,在 封裝區域8之發熱體9所形成之投影面積,即,投影於平 面之矩形的面積,較理想能形成在封裝區域8中包含電極 部6a之複數配線6所形成之部分的投影面積總和的3倍以 上。 發熱體9較理想由吸收雷射光而容易發熱之材料,例如 鋁或銅等的材料所構成。 Γ 1 發熱體9較理想係與玻璃基板1上之配線6的圖案同樣 的製造過程所形成者,其厚度也與配線6同樣的厚度,例 如,爲2000A〜3000A左右。 發熱體9能吸收雷射光而將配線6之電極部6a上之ACF3 有效率地加熱,形成於配線6之電極部6 a的附近較理想, 例如,第5圖之俯視圖所示,亦可形成進入複數之電極部 6a間的圖案。 第6圖係用於此實施形態之封裝方法的接合裝置丨〇的槪 C-i 念圖。 此接合裝置10係具備:對ACF3照射爲單色光之雷射光 之雷射部1 1 ;爲了支撐玻璃基板1之支撐台1 2 ;玻璃製加 壓頭1 3 ;玻璃製加壓頭(光線分岐用棱鏡型)1 4 ;汽缸1 5 ; 雷射部16 ;二向分光鏡17 ;全反射鏡1 8 ;測定部19 ;備 用玻璃20 ;控制接合裝置10整體的控制部2 1 ;以及爲了 真空吸附對象物之真空吸附部22。而且,於汽缸1 5與玻璃 基板1之間被插入1C晶片2及ACF3。 -15- 200847874 雷射部11,對ACF3照射既定頻率之雷射。具體上,選 擇與其他的頻率比較相對地對玻璃之透過率高,對發熱體 9及ACF3吸收率高的頻率者。 汽缸1 5,係爲了藉由玻璃製加壓頭1 3、1 4對於1C晶片 2及玻璃基板1之接合予以加壓者。 玻璃製加壓頭1 3、14都是玻璃製,能透過來自雷射部 1 1照射的雷射。而且,在玻璃製加壓頭1 4,將雷射光分岐 輸出到全反射鏡1 8。此外,作爲玻璃製加壓頭1 4,可使用 Γ: 爲平面精度高的加工品之所謂光學平板或光學窗。 全反射鏡1 8,係將藉由玻璃製加壓頭(光線分岐用棱鏡 型)1 4射出之雷射光予以反射。二向分光鏡1 7,係將藉由 全反射鏡1 8反射之雷射光再使其反射而輪入測定部1 9。 測定部1 9,係接受從二向分光鏡17射入之雷射光,而 測定其受光強度。 真空吸附部22,係根據控制部2 1的指示從被設置於玻璃 , 製加壓頭1 3之吸引孔將對象物之在本例爲1C晶片2真空 C,, 吸住。據此,可防止與ACF 3黏著之時藉由加壓有可能發 生之對準偏差,而成爲可高精度的對準。 此外,在本例,圖顯示雷射部1 6係爲了校準修正而照射 雷射者,通過二向分光鏡17之雷射,藉由全反射鏡18及 玻璃製加壓頭1 3、14而照射到1C晶片2。 又,在第6圖,作爲一例雖顯示藉由玻璃製加壓頭π將 一個吸引孔與真空吸附部22連接的情况,但不限於此,當 然也可能使用複數個吸引孔而進行真空吸附。 -16- 200847874 第7圖係說明雷射部丨1的槪略方塊圖。此實施形態之雷 射部1 1係具備:振盪器23 ;光束擴張器24 ;二向分光鏡 25 ;狹縫26 ;光束取樣器27 ;雷射鏡28 ;光束擴張器29 ; 雷射線發生器30 ;對準雷射指示器3 1 ;以及動力計32。 雷射振盪器23,作爲一例可用發射波長;I = 1 064nm附近 之雷射的YAG雷射等的固態雷射。又,亦可用雷射二極體。 從雷射振盪器23射出之雷射,藉由光束擴張器24使偏向 成既定寬度的平行光線。而且,通過二向分光鏡25之後, f " 藉由狹縫26縮小成狹縫寬度的光線。通過狹縫26後藉由 光取樣器27 —部分的光線被反射而射入動力計32。動力計 32 ’則檢出被射入之光線的受光強度,判斷從雷射振盪器 23是否射出所期望之光強度的雷射,雖未圖示藉由控制雷 射振盪器23等之控制部21調整雷射振盪器23的輸出。通 過狹縫2 6之雷射,藉由雷射鏡2 8之反射而射入光束擴張 器2 9。光束擴張器2 9則集光被射入之雷射,對A C F 3照射。 ^ 對準雷射指示器3 1,係爲了振盪對準調整之雷射的雷射 振盪器,例如選擇可見光之波長。例如,在本例使用6 9 0 n m 的雷射。從此對準雷射指示器3 1射出之雷射,藉由雷射線 發生器30整形並透過二向分光鏡25與從雷射振盪器23射 出之雷射同樣被照射於ACF3。此雷射係對準調整即爲了校 準位置的雷射,用此雷射進行定位控制。此外,在上述之 雷射部1 1,作爲雷射反射用零件雖用雷射鏡2 8的情况作說 明,但並不限定於此,例如,當然亦可用可微調雷射之反 射角度的所謂電流計反銳鏡(g a 1 v a η 〇 m i r r 〇 r)或多邊形鏡 -17- 200847874 (polygon mirror) 等以取代雷射鏡28。 又’此_射ρβ 1 1 ’係所謂雷射劃線器(1 a s e r m a r k e r),作 爲雷射照射’在載置試驗材料桌子的支撐台12上被定位之 規定位置上描劃任意軌跡而可照射雷射光。 一般’通常的雷射劃線器可用CAD資料於規定的位置照 射。因此,例如,液晶顯示面板L C D之C A D資料可照其原 狀使用進行照射部位的定位控制。作爲雷射光的照射軌跡 期望薄膜能充分的加熱而把能量局部的集中者。此外,藉 由將雷射光的照射光量及/或照射軌跡適當地控制可適當 地調整黏著強度,例如,可採用所謂擺動(wobbllng)方式或 塗擦方式。依據擺動方式之照射軌跡係一面將照射點的中 心旋轉而進行者。另一方面,所謂塗擦方式係藉由多數的 平行線將預定照射區域埋滿者。關於該技術因屬一般性, 所以在本申請案的說明書中將其詳細說明省略。 使用如此的接合裝置1 0,進行如下的封裝。 首先,如上述的第2圖所示,使玻璃基板1之配線6的 電極部6a與相對應之1C晶片2的凸塊電極5對向,進行 相對應之各個電極的對位,爲了夾住放進玻璃基板1之電 極部6a與1C晶片2的凸塊電極5之間的ACF3,所以如第 6圖所示,使用汽缸1 5在加壓頭1 3、1 4與支撐台1 2之間 將玻璃基板1與1C晶片2予以加壓。而且,來自雷射部1 1 之雷射光,通過玻璃基板1,照射發熱體9及ACF3。此時, 被形成於封裝區域之發熱體9會吸收雷射光而發熱,透過 此發熱,間接地加熱在其上方的ACF3。即,ACF3 —方面 -18- 200847874 吸收雷射光而直接加熱其本身,另一方面透過發熱體 發熱成爲間接地加熱。據此,與未形成發熱板9之習 比較,對ACF3之加熱量會增大,至ACF3熔融硬化的 變短,可縮短封裝所需要的時間。 又,發熱體9,因爲吸收雷射光而會發熱,所以透過 的雷射光變少,可抑制藉由透過1C晶片2之雷射光不 之加熱。 此外,在A C F 3硬化後開放由於加壓頭1 3之加熱。 f % 在此,電極的對位,係通過玻璃基板1,以CCD照 (亦僅稱照相機)攝影,而將以照相機攝影之攝影畫 例如,藉由在控制部2 1等予以畫像處理而可實行。 例,從玻璃基板1之背面側以照相機攝影的情況,可 攝影玻璃基板1與1C晶片2所以電極的對位變成容易 例如,亦可使用被設置於玻璃基板1與1C晶片2之基 號等實行電極的對位,透過從1C晶片2之上側的照相 , 影對位亦屬可能。 〔第2實施形態〕 在上述之實施形態,雖適用COG方式,但在本發明 適用C〇F(Chip On Film)方式。 第8圖係適用C OF方式之封裝體的俯視圖’弟9圖 A - A剖面圖。 在由聚亞胺所形成之薄膜基板33上,形成具有電 34a之配線34,被封裝在此薄膜基板33之1C晶片35 面,如第9圖所示被形成凸塊電極36。 9的 知例 時間 ACF3 期望 相機 像, 在本 同時 ,但, 準記 機攝 亦可 係其 極部 的下 -19- 200847874 在薄膜基板33被封裝1C晶片35的封裝區域,與上述之 實施形態同樣,從配線34孤立被形成發熱體9 - 1,吸收封 裝之時的雷射光而加熱ACF37者。其他之構成,係與上述 之實施形態同樣。 〔第3實施形態〕 在上述之各實施形態,雖適用1C晶片的封裝,但在本發 明並不限定於1C晶片,亦可適用於TCP,或其他零件,例 如,也可適用連接用之補助零件的薄膜基板等的封裝。 ( 第1 0圖係將薄膜基板3 8封裝於玻璃基板3 9之狀態的俯 視圖,第1 1圖係其剖面圖。 玻璃基板39上之配線40的端部之電極部40a與薄膜基 板3 8之配線4 1的端部之電極部4 1 a,係如第1 1圖所示藉 由ACF42而被連接。 在此實施形態,於玻璃基板3 9,係如第1 2圖的俯視圖所 示,在複數之配線40之間,分別形成各個複數之發熱體9 c,〜2。 此外,作爲其他實施形態,亦可用薄膜基板替代玻璃基 板39。 〔產業上的利用可能性〕 本發明有用於各種零件向基板的封裝。 【圖式簡單說明】 第1圖係爲了說明COG方式之封裝的立體圖。 第2圖係爲了說明1C晶片向玻璃基板之封裝方法的剖 面圖。 -20- 200847874 第3圖係封裝體的剖面圖。 第4圖係顯示玻璃基板之一部分的立體圖。 第5圖係顯示發熱體之其他例的俯視圖。 第6圖係用於封裝方法之接合裝置的槪念圖。 第7圖係第6圖之雷射部的槪略方塊圖。 第8圖係本發明之其他實施形態之封裝體的俯視圖。 第9圖係第8圖的剖面圖。 第1 0圖係本發明之更另外實施形態的封裝體之主要 ί : " 部分的俯視圖。 第1 1圖係第1 0圖的剖面圖。 第1 2圖係第1 0圖之玻璃基板的俯視圖。 第1 3圖係爲了說明習知例之封裝方法的剖面圖。 第1 4圖係爲了說明使用雷射光之封裝方法的剖面圖。 【主要元件符號說明】 1,39 玻 璃 基 板 2,35 1C 晶 片 3,37,42 ACF 5 凸 塊 電 極 6,34,40 配 線 6a,34a,40 丑 電 極 部 7 封 裝 體 8 封 裝 區 域 9,9-1, 9-2 發 熱 體 33,38 薄 膜 基 板 -21-200847874 IX. Description of the Invention: Technical Field of the Invention The present invention relates to a method of manufacturing a package in which a component is packaged on a substrate, a package, and a substrate that is packaged. [Prior Art] In recent years, as a personal computer, an image display device for various other monitors, and a flat panel display such as a liquid crystal display device are rapidly spreading. For example, the liquid crystal display device is composed of a peripheral member such as a liquid crystal panel, an LCD driver, or a backlight, and the liquid crystal panel is formed by forming a transparent electrode having a predetermined pattern on the surface of each of the pair of glass substrates, and sandwiching the liquid crystal. The glass substrates are formed by being bonded to each other. In the liquid crystal display device, pixels are formed by transmitting a pair of transparent electrodes facing each other, and the transparent electrodes are applied to the 1C wafer of the LCD driver to form a visible image. Regarding the packaging method of the liquid crystal panel for the 1C wafer of this LCD driver, various methods have been known from the prior art, and there is a method called C〇G (Chip On Glass). Fig. 13 is a cross-sectional view for explaining a joining method of the COG method. On the glass substrate 50, the wiring 51 is formed, and the end portion thereof becomes the electrode portion 51a for connecting the parts. A bump electrode 53 is formed under the 1C wafer 52 of the LCD driver of the glass substrate 50. First, an adhesive such as an ACF (Anisotropic Conductive Film) 54 is attached to the glass substrate 50, and the 1C wafer 52 is placed on the ACF 54. Next, the 1C wafer 52 is thermocompression bonded to the glass substrate 50 by pressing the 1C wafer 52 with the heater head 55 heated to a predetermined temperature. Thus, the 1C wafer 52 of the LCD driver 200847874 is packaged on the glass substrate 50 of the liquid crystal panel. In such a packaging method, since the ACF 54 is heated by the sheet 52 while passing through the heater head 5, the ACF 54 is heated to melt harden. When the bed is required to cover the temperature gradient from the 1C wafer 52 to the glass substrate 50, the problem of so-called deformation occurs. Therefore, in the applicant's proposal, as shown in FIG. 14, the laser light is irradiated from the back side of the glass substrate 50 as indicated by an arrow, and the ACF 54 is directly heated by the laser light transmitted through the glass 50 to be melt-hardened, while the head 5 is (6) A method of bonding to a glass substrate 50 (refer to the patent document [Patent Document 1] Japanese Patent Application Laid-Open No. Hei. No. 2006-25 3665] [Problems to be Solved by the Invention] In the method, the thickness of the adhesive such as ACF54 is as thin as, for example, several tens/m, so that the irradiated laser light is not absorbed by the adhesive and transmitted, so that there is room for improvement in the heating efficiency of the adhesive. The laser light transmitted through the adhesive is also absorbed by the 1C wafer 52 component to cause the component to be undesirably heated. The present invention has been made in view of the above problems, and the object thereof is to efficiently use an adhesive. Heating to shorten the time required for packaging, and the purpose is also to suppress undesired heating of other parts, etc. [Means for Solving the Problem] (1) The method of manufacturing the package of the present invention will contain a thermally reactive adhesive interposed between a substrate on which a plurality of wires are formed and a component to be packaged, and heated by the laser light to pressurize the substrate between the 1C crystal F and the temperature number by irradiation of laser light Especially 1). Because of the method of manufacturing a package in which the electrode portion of the ACF and the electrode portion of the resin substrate is connected to the electrode of the component, the package portion of the substrate in which the component is packaged is preliminarily formed to absorb the laser light. On the other hand, the heat generating element that generates heat increases the amount of heating other than the direct heating by the heat generated by the heat generating element to the adhesive that directly absorbs the laser light. Here, the substrate on which the wiring is formed is preferably a substrate that easily transmits laser light, and the substrate includes a glass substrate, a film substrate, a flexible substrate, or a sand substrate. The parts include active parts such as 1C or a transistor, passive parts such as resistors or capacitors, and auxiliary parts such as a board or a connector. The adhesive containing a heat-reactive resin includes an anisotropic conductive adhesive such as ACFUnisotropic Conductive Film or ACP (Anisotropic Conductive Paste), or a non-conductive property such as NCF (Non Conductive Film) or NCP (Non Conductive Paste). Adhesive. The laser beam is preferably irradiated from the side opposite to the package surface of the substrate. However, the substrate may be printed on the package surface side of the printed wiring board. The area of the package refers to the area where the part is packaged, and also the area where the substrate overlaps with the part. The area where the adhesive is located is the same as the package area, or slightly larger, more ideal, or smaller. The heating element may be formed at least in the package area, or may be formed outside the package area. The heating system is made of a material that absorbs laser light and is easy to generate heat. m g $ is more reasonable. 200847874 I think it is better, for example, Ming or copper. The heat-generating system absorbs the laser light and heats up to heat the adhesive. The adhesive itself absorbs the laser light and directly heats it indirectly (supplemented) to increase the amount of heating. Therefore, the amount of heating in which the adhesive is indirectly heated from the substrate side by the heat generated by the heating element is increased as compared with the prior art. The heating element can be completely separated from the wiring, or can be connected to a part of the wiring, for example, to a ground wiring or the like. The heating system can have a continuous shape or can be separated into a plurality of islands. The heat generating system is preferably formed in the vicinity of the electrode portion of the wiring, and may be formed between the plurality of electrode portions. The heating system can be formed in the same process as the wiring, or it can be formed in another process. According to the present invention, the package region of the substrate, that is, the region where the adhesive is interposed, is formed by preliminarily forming a heat generating body that absorbs the laser light and generates heat. Therefore, when the laser beam is irradiated, the heat generating body on the substrate absorbs the laser light and generates heat. Since the adhesive is heated above it, the adhesive is efficiently heated and melt-hardened, and the time required for the package can be shortened as compared with the conventional one. Moreover, by irradiating the laser light from the opposite side of the package surface of the substrate, the laser light is absorbed by the heat generating body on the substrate, and the laser light transmitted through the adhesive is reduced, so that the packaged component can be inhibited by the adhesive. The laser light is not expected to be heated. (2) In an embodiment of the method for producing a package of the present invention, the heat generating system can be formed by isolating the wiring. 200847874 ·' In the wiring system, the electrode part connected to the electrode of the part is included, and the electrode part is preferably attached to the end of the wiring. The so-called isolation from the wiring means separation without being connected to the wiring. According to this embodiment, since the heat generation system is formed by the separation of the wiring, the heat of the heat generating body that generates heat by absorbing the laser light prevents heat from being released outside the package region by the wiring pattern, and the adhesive can be efficiently used. heating. (3) In another embodiment of the method of manufacturing a package of the present invention, the total f'% of the projected area of the portion formed by the heat generating body in the package region may be the wiring in the package region The sum of the projected areas of the formed portions is more than three times. The upper limit of the sum of the projected areas of the portions formed by the heat generating body is the sum of the projected areas in the case where the heat generating body is formed almost entirely except for the portion where the wiring of the package region is formed. According to this embodiment, since the heat generating body occupies a large area in the package region, the heat generating body absorbs the laser light and generates a large amount of heat. Therefore, the amount of heating of the heating adhesive can be sufficiently ensured. (4) In still another embodiment of the method for manufacturing a package of the present invention, the heat generating body may be electrically separated from other components outside the package region. The so-called electrical separation from other components It means that the heating element is not electrically connected to other parts. According to this embodiment, since the heating element is not electrically connected to other parts outside the package area, the heat of the heating element that generates heat by absorbing the laser light is It is possible to suppress heat release to the outside of the package area, and it is possible to efficiently heat the adhesion. 200847874 The wiring part includes an electrode portion connected to the electrode of the part, and the electrode part is preferably attached to the end of the wiring. The so-called isolation from the wiring means separation. According to this embodiment, since the heat generation system is formed by separation from the wiring, the heat of the heat generating element that generates heat by absorbing the laser light prevents heat from being released outside the package area by the wiring pattern, and the adhesive can be applied. (3) In another embodiment of the method of manufacturing a package of the present invention, the portion formed by the heat generating body in the package region The sum of the projected areas may be more than three times the total projected area of the portion formed by the wiring in the package region. The upper limit of the total projected area of the portion formed by the heat generating body is formed by wiring in the package region. According to this embodiment, since the area occupied by the heating element is large in the package area, the amount of heat generated by the heating element to absorb the laser light and generate heat can be sufficiently ensured. That is, the heating amount of the heating agent is heated. (4) In still another embodiment of the method for manufacturing a package of the present invention, the heating element may be electrically separated from other parts outside the package area. Electrically separated from other parts means that the heating element is not electrically connected to other parts. According to this embodiment, since the heating element is not electrically connected to other parts outside the package area, the laser beam is absorbed. The heat of the heating element of the heat can suppress the heat release to the outside of the package area, and can efficiently heat the adhesion of 200847874, so it is sealed. The part can suppress undesired heating by the laser light transmitted through the adhesive. (7) In one embodiment of the package of the present invention, the heat generating system can be formed from the wiring. "According to this embodiment, Since the heat generation system is formed by the separation of the wiring, the heat of the heat generating body that generates heat by absorbing the laser light prevents heat from being released outside the package area by the wiring pattern, and the adhesive can be efficiently heated. In another embodiment of the package of the invention, the sum of the projected areas of the portions formed by the heat generating body in the package region f ^ may be three times the total projected area of the portion formed by the wiring in the package region. According to this embodiment, since the area occupied by the heat generating element is large in the package region, it is possible to sufficiently ensure that the heat generating body absorbs the laser light and generates a large amount of heat generation, that is, heats up the heating agent. (9) In still another embodiment of the package of the present invention, the heat generating body may be electrically separated from other parts outside the package area. According to this embodiment, since the heating element is not electrically connected to other components other than the package area, the heat of the heating element that generates heat by absorbing the laser light can suppress heat release to the outside of the package area, and can be efficiently heated. Adhesive. (10) In an embodiment of the package of the present invention, each of the plurality of electrode portions of the wiring is disposed in a peripheral portion of the package region, and the heat generating body may be formed in each of the package regions. The outermost position of the electrode portion is further in the inner surface. 0-11-200847874 According to this embodiment, since the heat generating body is formed on the inner surface of each electrode portion in the peripheral portion of the package region, the heat generating body is efficient in the central portion of the package region. The ground absorbs the laser light and generates heat, and the adhesive can be heated efficiently. (11) The substrate of the present invention is formed with a plurality of wires, and the electrode portion of the wiring is connected to the electrode of the packaged component by an adhesive containing a heat-reactive resin, and the component is a packaged substrate. Wherein, in the package region where the component is packaged, a heat generating body capable of absorbing laser light and generating heat is formed, and the heat of the heat generating body is transmitted, and the adhesive which directly heats the laser light is absorbed, and the direct heat is increased. The amount of heating. According to the present invention, a heat generating body capable of absorbing laser light and generating heat is formed in the package region of the substrate. Therefore, when the laser beam is irradiated, the heat generating body on the substrate absorbs the laser light and generates heat, and the adhesive is efficiently heated and melted and hardened. , can shorten the time required for packaging. Further, by irradiating the laser light from the side opposite to the package surface of the substrate, the laser light is absorbed by the heat generating body on the substrate, and the laser light transmitted through the adhesive is reduced. Therefore, the packaged component is passed through the adhesive. Exposure to light can suppress undesired heating. (1) In an embodiment of the substrate of the present invention, the heat generating system is formed by the wiring. According to this embodiment, since the heat generating system is formed by the separation of the wiring, the heat of the heat generating body that generates heat by absorbing the laser light prevents heat from being released outside the package region by the wiring pattern, and the adhesive can be efficiently heated. (1) In another embodiment of the substrate of the present invention, the sum of the projected areas of the portions formed by the heat generating body in the package region may be formed by the wiring in the region of the stomach seal * ^ -12 · 200847874 More than 3 times the sum of the projected areas. According to this embodiment, since the area occupied by the heat generating element is large in the package region, it is possible to sufficiently ensure that the heat generating body absorbs the laser light and generates a large amount of heat generation, i.e., heats the amount of heating of the adhesive. (1) In still another embodiment of the substrate of the present invention, the heat generating body may be electrically separated from other parts outside the package area. According to this embodiment, since the heat generating body is not electrically connected to other components other than the package region, the heat of the heat generating body that generates heat by absorbing the laser light can suppress heat release to the outside of the package region, and the heat can be efficiently heated and adhered. Agent. (1) In one embodiment of the substrate of the present invention, each of the plurality of electrode portions of the wiring is disposed in a peripheral portion of the package region, and the heat generating body may be formed on each of the electrodes in the package region. The outermost position of the department is more internal. According to this embodiment, since the heat generating body is formed on the inner surface of each of the electrode portions in the peripheral portion of the package region, the heat generating body efficiently absorbs the laser light and generates heat in the central portion of the package region, and the adhesive can be efficiently used. heating. [Effect of the Invention] According to the present invention, when irradiated with laser light, the heat generating body on the substrate absorbs the laser light and generates heat, and the adhesive is efficiently heated and melted and hardened by heating the adhesive thereon. Comparing can shorten the time required for packaging. Moreover, by irradiating the laser light from the opposite side of the package surface of the substrate, the laser light is absorbed by the heat generating body on the substrate, and the laser light transmitted through the adhesive is reduced. Therefore, the packaged component is irradiated with the laser light through the adhesive. It can suppress the heating that is not expected in 200847874. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. [First Embodiment] In the embodiment, for example, as shown in the schematic view of Fig. 1, on the glass substrate 1 of one of the liquid crystal panels, the IC chip 2 of the L C D driver is packaged by the COF method using ACF3. At the time of this package, as shown in the cross-sectional view of Fig. 2, the ACF 3 is heated and hardened by irradiating laser light from the back side of the glass substrate 1 as indicated by an arrow symbol, and is added by a press head 13 to be described later. The plurality of bump electrodes 5 of the 1C wafer 2 are connected to the electrode portions 6a at the ends of the plurality of wirings 6 on the glass substrate 1, whereby the package 7 of Fig. 3 can be obtained. In this embodiment, the ACF3 is efficiently heated by the irradiation of the laser light to shorten the time required for the package, and the structure is constructed so as not to cause the 1C wafer 2 or the like to be undesirably heated. That is, on the glass substrate 1, as shown in the perspective view of Fig. 4, the rectangular package region 8 in which the 1C wafer 2 is packaged by a broken line is formed with a heat generating body 9 for generating heat by absorbing laser light. To heat ACF3. The rectangular package region 8 on the glass substrate 1 is arranged along the opposite long sides thereof to form a plurality of electrode portions 6a corresponding to the plurality of bump electrodes 5 of the DIP type 1C wafer 2. The heating element 9 is formed in a rectangular pattern isolated from the wiring 6 between the plurality of electrode portions 6a. By making such an isolated pattern, the heat generated from the heat-generating body 9 that absorbs the laser light is not radiated to the outside of the package region 8 by the pattern of the wiring 6, and the AC F3 on the heat generating body 9 can be used by -14-200847874. Heat up efficiently. In order to ensure a sufficient heat generation amount of the laser beam, the heat generating body 9 has a projected area formed by the heat generating body 9 in the package region 8, that is, a rectangular area projected on the plane, and is preferably formed in the package region 8 to include an electrode. The total projected area of the portion formed by the plurality of wires 6 of the portion 6a is three times or more. The heating element 9 is preferably made of a material that absorbs laser light and is likely to generate heat, such as aluminum or copper. Γ 1 The heating element 9 is preferably formed in the same manufacturing process as the pattern of the wiring 6 on the glass substrate 1, and has a thickness similar to that of the wiring 6, for example, about 2000A to 3000A. The heating element 9 can absorb the laser light and efficiently heat the ACF 3 on the electrode portion 6a of the wiring 6, and is preferably formed in the vicinity of the electrode portion 6a of the wiring 6. For example, as shown in the plan view of Fig. 5, it may be formed. Entering the pattern between the plurality of electrode portions 6a. Fig. 6 is a 槪 C-i diagram of the bonding apparatus used in the packaging method of this embodiment. The bonding apparatus 10 includes a laser beam 1 1 that irradiates the ACF 3 with laser light of monochromatic light, a support table 1 2 that supports the glass substrate 1 , a glass pressure head 13 , and a glass pressure head (light) Splitting prism type) 1 4 ; cylinder 15; laser portion 16; dichroic beam splitter 17; total reflection mirror 18; measuring portion 19; spare glass 20; control portion 2 1 for controlling the entire joint device 10; The vacuum adsorption portion 22 of the object is vacuum-adsorbed. Further, the 1C wafer 2 and the ACF 3 are inserted between the cylinder 15 and the glass substrate 1. -15- 200847874 Laser Department 11, which irradiates ACF3 with a laser of a given frequency. Specifically, the transmittance to the glass is relatively high as compared with the other frequencies, and the frequency at which the heat generating body 9 and the ACF3 have a high absorption rate is selected. The cylinder 15 is for pressurizing the joining of the 1C wafer 2 and the glass substrate 1 by the glass press heads 13 and 14. The glass pressurizing heads 13 and 14 are made of glass and can transmit laser light irradiated from the laser portion 11. Further, in the glass press head 14, the laser light is branched and output to the total reflection mirror 18. Further, as the glass press head 14 , a so-called optical flat plate or an optical window which is a processed product having high plane precision can be used. The total reflection mirror 18 is reflected by the laser light emitted from the glass pressurizing head (prism type for light splitting) 14 . The dichroic beam splitter 17 is rotated by the laser beam reflected by the total reflection mirror 18 and rotated into the measuring portion 19. The measuring unit 1 9 receives the laser light incident from the dichroic beam splitter 17 and measures the received light intensity. The vacuum suction unit 22 sucks the object from the suction hole of the press head 13 in accordance with the instruction of the control unit 21, and the object is the vacuum C of the 1C wafer 2 in this example. According to this, it is possible to prevent alignment deviation which may occur by pressurization at the time of adhesion to the ACF 3, and it is possible to achieve high-precision alignment. Further, in this example, the figure shows that the laser portion 16 is irradiated to the laser for calibration correction, and the laser beam passing through the dichroic beam splitter 17 is used by the total reflection mirror 18 and the glass pressurizing heads 13 and 14. The 1C wafer 2 is irradiated. In the sixth embodiment, a case where one suction hole is connected to the vacuum suction portion 22 by the glass pressing head π is shown as an example. However, the present invention is not limited thereto, and it is also possible to perform vacuum suction using a plurality of suction holes. -16- 200847874 Figure 7 is a block diagram showing the laser part 丨1. The laser unit 11 of this embodiment includes an oscillator 23, a beam expander 24, a dichroic mirror 25, a slit 26, a beam sampler 27, a laser mirror 28, a beam expander 29, and a lightning ray generator. 30; align the laser pointer 3 1 ; and the power meter 32. The laser oscillator 23 is, for example, a solid-state laser such as a laser beam of a YAG laser having an emission wavelength; a laser near I = 1 064 nm. Also, a laser diode can be used. The laser beam emitted from the laser oscillator 23 is deflected by the beam expander 24 into a parallel light of a predetermined width. Moreover, after passing through the dichroic beam splitter 25, f " is reduced by the slit 26 into light of a slit width. After passing through the slit 26, part of the light by the optical sampler 27 is reflected and incident on the power meter 32. The power meter 32' detects the received light intensity of the incident light, and determines whether or not the laser beam of the desired light intensity is emitted from the laser oscillator 23, although the control unit such as the laser oscillator 23 is not shown. 21 Adjust the output of the laser oscillator 23. The beam expander 29 is incident by the reflection of the laser beam 28 through the laser of the slit 26. The beam expander 29 collects the laser that is incident on the light and irradiates A C F 3 . ^ Align the laser pointer 3 1 with a laser oscillator that oscillates the aligned laser, for example selecting the wavelength of visible light. For example, in this example a 6 0 0 n m laser is used. The laser beam emitted from the laser pointer 31 is then irradiated by the lightning ray generator 30 and transmitted through the dichroic beam splitter 25 and the laser beam emitted from the laser oscillator 23 to the ACF 3. This laser is aligned to adjust the laser for the calibration position, and the laser is used for positioning control. Further, the above-described laser portion 1 1 is described as a laser reflecting member using a laser beam 28, but the present invention is not limited thereto. For example, it is of course possible to use a so-called fine adjustment of the reflection angle of the laser. The galvanometer counter mirror (ga 1 va η 〇 mirr 〇r) or the polygon mirror -17-200847874 (polygon mirror) or the like is substituted for the laser mirror 28. Further, this ray β β β 1 1 ' is a so-called laser scriber (1 asermarker), and can be irradiated as a laser irradiation at a predetermined position on the support table 12 on which the test material table is placed. laser. In general, the usual laser scriber can be illuminated at a specified location using CAD data. Therefore, for example, the C A D data of the liquid crystal display panel L C D can be used as it is to perform positioning control of the irradiation portion. As the irradiation trajectory of the laser light, it is desirable that the film can be sufficiently heated to locally concentrate the energy. Further, the adhesion strength can be appropriately adjusted by appropriately controlling the amount of irradiation light and/or the irradiation trajectory of the laser light, and for example, a so-called wobbling method or a rubbing method can be employed. The irradiation trajectory according to the oscillating mode is performed while rotating the center of the irradiation spot. On the other hand, the rubbing method is to fill a predetermined irradiation area by a plurality of parallel lines. Since this technique is general, its detailed description is omitted in the specification of the present application. Using such a bonding apparatus 10, the following packaging was performed. First, as shown in the second drawing, the electrode portion 6a of the wiring 6 of the glass substrate 1 is opposed to the bump electrode 5 of the corresponding 1C wafer 2, and the corresponding electrodes are aligned, in order to clamp The ACF 3 between the electrode portion 6a of the glass substrate 1 and the bump electrode 5 of the 1C wafer 2 is placed, so that as shown in Fig. 6, the cylinders 15 are used at the pressurizing heads 13 and 14 and the support table 12 The glass substrate 1 and the 1C wafer 2 are pressurized together. Further, the laser light from the laser portion 1 passes through the glass substrate 1, and the heating element 9 and the ACF 3 are irradiated. At this time, the heat generating body 9 formed in the package region absorbs the laser light and generates heat, and the heat is generated to indirectly heat the ACF 3 above it. That is, ACF3 - Aspect -18 - 200847874 absorbs the laser light and directly heats itself, and on the other hand, it is indirectly heated by the heat generated by the heat generating body. Accordingly, the amount of heating to the ACF 3 is increased as compared with the case where the heat generating plate 9 is not formed, and the melting hardening of the ACF 3 is shortened, so that the time required for the packaging can be shortened. Further, since the heating element 9 generates heat by absorbing the laser light, the transmitted laser light is reduced, and the heating of the laser light transmitted through the 1C wafer 2 can be suppressed. Further, the heating of the pressurizing head 13 is opened after the A C F 3 is hardened. f % Here, the alignment of the electrodes is photographed by the CCD (also referred to as a camera) through the glass substrate 1, and the photographic image taken by the camera can be image-processed by, for example, the control unit 21 or the like. Implemented. For example, when the camera is photographed from the back side of the glass substrate 1, the glass substrate 1 and the 1C wafer 2 can be photographed, so that the alignment of the electrodes becomes easy. For example, the base numbers of the glass substrates 1 and 1C wafer 2 can be used. It is also possible to perform the alignment of the electrodes through the photographing from the upper side of the 1C wafer 2. [Second Embodiment] In the above embodiment, the COG method is applied, but the C〇F (Chip On Film) method is applied to the present invention. Fig. 8 is a plan view of a package to which the COF method is applied. On the film substrate 33 formed of polyimide, a wiring 34 having electricity 34a is formed, and is packaged on the surface of the 1C wafer 35 of the film substrate 33, and a bump electrode 36 is formed as shown in Fig. 9. The known time of the ACF3 is expected to be a camera image, but at the same time, the camera can also be the lower part of the -19-200847874. The package area of the 1C wafer 35 is packaged on the film substrate 33, and the above embodiment. Similarly, the heating element 9-1 is formed in isolation from the wiring 34, and the laser light at the time of encapsulation is absorbed to heat the ACF37. Other configurations are the same as those of the above embodiment. [Third Embodiment] In the above embodiments, the package of the 1C wafer is applied. However, the present invention is not limited to the 1C wafer, and may be applied to TCP or other components. For example, a subsidy for connection may be applied. The package of the film substrate of the part. (Fig. 10 is a plan view showing a state in which the film substrate 38 is sealed on the glass substrate 39, and Fig. 1 is a cross-sectional view thereof. The electrode portion 40a and the film substrate 38 at the end of the wiring 40 on the glass substrate 39 are shown. The electrode portion 4 1 a at the end of the wiring 4 1 is connected by the ACF 42 as shown in Fig. 11. In this embodiment, the glass substrate 3 9 is as shown in the plan view of Fig. 2 . In addition, as another embodiment, a film substrate may be used instead of the glass substrate 39. [Industrial Applicability] The present invention is useful for the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view for explaining a COG package. Fig. 2 is a cross-sectional view showing a method of packaging a 1C wafer to a glass substrate. -20- 200847874 3 Fig. 4 is a perspective view showing a part of a glass substrate. Fig. 5 is a plan view showing another example of a heat generating body. Fig. 6 is a view of a joining device for a packaging method. Figure 7 is the laser section of Figure 6. Fig. 8 is a plan view of a package according to another embodiment of the present invention. Fig. 9 is a cross-sectional view of Fig. 8. Fig. 1 is a view of a package of still another embodiment of the present invention. A top view of a portion of the first embodiment is a top view of the glass substrate of Fig. 10. Fig. 1 is a cross-sectional view for explaining a packaging method of a conventional example. Fig. 14 is a cross-sectional view for explaining a packaging method using laser light. [Description of main components] 1, 39 glass substrate 2, 35 1C wafer 3, 37, 42 ACF 5 bump electrodes 6, 34, 40 Wiring 6a, 34a, 40 Ugly electrode portion 7 Package 8 Package area 9, 9-1, 9-2 Heating element 33, 38 Film substrate-21-

Claims (1)

200847874 十、申請專利範圍: 1 . 一種封裝體的製造方法,係將含有熱反應性樹脂之黏著 劑’介於形成有複數配線的基板與欲封裝於該基板的零 件之間,藉由雷射光之照射,加熱該黏著劑將該配線電 極部與該零件的電極連接,其特徵在於: 在該基板之該零件被封裝的封裝區域,預先形成可吸 收該雷射光而發熱的發熱體, 透過該發熱體之發熱,對吸收該雷射光而直接加熱的 / ~ 該黏著劑,增加該直接加熱以外的加熱量。 2 ·如申請專利範圍第1項之封裝體的製造方法,其中 該發熱體係從該配線孤立所形成。 3. 如申請專利範圍第1項之封裝體的製造方法,其中 在該封裝區域中,該發熱體所形成的部分之投影面積 的總和,爲在該封裝區域中該配線所形成之部分的投影 面積總和的3倍以上。 4. 如申請專利範圍第1項之封裝體的製造方法,其中 該發熱體係與該封裝區域外之其他的零件作電性地分 離。 5. 如申請專利範圍第1項之封裝體的製造方法,其中 複數之該等配線的各電極部,分別被配置在該封裝區 域的周邊部,該發熱體被形成在比該封裝區域之該各電 極部的最外位置更內面。 6. —種封裝體,係將含有熱反應性樹脂之黏著劑’介於形 成有複數配線的基板與欲封裝於該基板的零件之間’加 -22 - 200847874 熱該黏著劑而將該配線的電極部與該零件的電極連接, 其特徵在於: 在該基板的該零件被封裝之封裝區域,形成可吸收雷 射光而發熱的發熱體, 透過該發熱體之發熱,對吸收該雷射光而直接加熱之 該黏著劑,增加該直接加熱以外的加熱量。 7. 如申請專利範圍第6項之封裝體,其中 該發熱體係從該配線孤立所形成。 8. 如申請專利範圍第6項之封裝體,其中 在該封裝區域中該發熱體所形成的部分之投影面積的 總和,爲在該封裝區域中該配線所形成的部分之投影面 積總和的3倍以上。 9. 如申請專利範圍第6項之封裝體,其中 該發熱體係與該封裝區域外之其他零件作電性地分 離。 10.如申請專利範圍第6項之封裝體,其中 複數之該等配線的各電極部,分別被配置在該封裝區 域的周邊部,該發熱體被形成在比該封裝區域之該各電 極部的最外位置更內面。 11 · 一種基板,係形成複數之配線,藉由含有熱反應性樹脂 之黏著劑,將該配線電極部與欲封裝零件的電極連接, 使該零件被封裝,其特徵在於: 在該零件被封裝的封裝區域,形成可吸收雷射光而發 熱的發熱體,透過該發熱體的發熱,對吸收該雷射光而 -23- 200847874 直接加熱之該黏著劑,增加該直接加熱以外的加熱量。 1 2.如申請專利範圍第1 1項之基板,其中 該發熱體係從該配線孤立所形成。 1 3 .如申請專利範圍第1 1項之基板,其中 在該封裝區域中該發熱體所形成的部分之投影面積的 總和,爲在該封裝區域中該配線所形成的部分之投影面 積總和的3倍以上。. ! 4.如申請專利範圍第11項之基板,其中 c 該發熱體係與該封裝區域外之其他零件作電性地分 離。 i 5 .如申請專利範圍第u項之基扳’其中 複數之該等配線的各電極部,分別被配置在該封裝區 域的周邊部,該發熱體係被形成在比該封裝區域之該各 電極部的最外位置更內面。 -24-200847874 X. Patent application scope: 1. A method for manufacturing a package, wherein an adhesive containing a heat-reactive resin is interposed between a substrate on which a plurality of wirings are formed and a component to be packaged on the substrate, by laser light Irradiation, heating the adhesive to connect the wiring electrode portion to the electrode of the component, wherein a heat generating body capable of absorbing the laser light and generating heat is formed in a package region of the substrate in which the component is packaged The heat generated by the heating element is directly heated by the absorption of the laser light, and the amount of heating other than the direct heating is increased. 2. The method of manufacturing a package according to claim 1, wherein the heat generating system is formed from the wiring. 3. The method of manufacturing a package according to claim 1, wherein a total of a projected area of a portion of the heat generating body in the package region is a projection of a portion of the package formed in the package region. More than three times the total area. 4. The method of manufacturing a package according to claim 1, wherein the heat generating system is electrically separated from other parts outside the package area. 5. The method of manufacturing a package according to claim 1, wherein each of the plurality of electrode portions of the wiring is disposed at a peripheral portion of the package region, and the heat generating body is formed in the package region. The outermost position of each electrode portion is more inner. 6. A package in which an adhesive containing a heat-reactive resin is interposed between a substrate on which a plurality of wirings are formed and a component to be packaged on the substrate - -22 - 200847874 heats the adhesive and the wiring The electrode portion is connected to the electrode of the component, and a heat generating body capable of absorbing laser light and generating heat is formed in a package region where the component of the substrate is packaged, and heat is generated by the heat generating body to absorb the laser light. The adhesive is directly heated to increase the amount of heating other than the direct heating. 7. The package of claim 6, wherein the heat generating system is formed from the wiring. 8. The package of claim 6, wherein the sum of the projected areas of the portions formed by the heat generating body in the package region is the sum of the projected areas of the portions formed by the wires in the package region. More than double. 9. The package of claim 6, wherein the heat generating system is electrically separated from other parts outside the package area. 10. The package of claim 6, wherein each of the plurality of electrode portions of the wiring is disposed at a peripheral portion of the package region, and the heat generating body is formed at each of the electrode portions of the package region. The outermost position is more inside. 11 . A substrate for forming a plurality of wirings, wherein the wiring electrode portion is connected to an electrode of a component to be packaged by an adhesive containing a heat-reactive resin, and the component is packaged, wherein: the component is packaged In the package region, a heat generating body capable of absorbing laser light and generating heat is generated, and the heat of the heat generating body is increased by the direct heating of the adhesive which absorbs the laser light and is directly heated by -23-200847874. 1 2. The substrate of claim 11, wherein the heat generating system is formed from the wiring. The substrate of claim 11 wherein the sum of the projected areas of the portions formed by the heat generating body in the package region is the sum of the projected areas of the portions formed by the wires in the package region. More than 3 times. 4. The substrate of claim 11, wherein the heat generating system is electrically separated from other parts outside the package area. i. The base electrode of the above-mentioned plurality of wirings is disposed in a peripheral portion of the package region, and the heat generating system is formed at each electrode of the package region. The outermost position of the department is more internal. -twenty four-
TW097105261A 2007-02-16 2008-02-15 A method of packaging body, packaging body and substrate TW200847874A (en)

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JP6715052B2 (en) * 2016-03-25 2020-07-01 デクセリアルズ株式会社 Method for manufacturing connection structure
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