JPH08146451A - Apparatus for producing circuit device - Google Patents

Apparatus for producing circuit device

Info

Publication number
JPH08146451A
JPH08146451A JP28217294A JP28217294A JPH08146451A JP H08146451 A JPH08146451 A JP H08146451A JP 28217294 A JP28217294 A JP 28217294A JP 28217294 A JP28217294 A JP 28217294A JP H08146451 A JPH08146451 A JP H08146451A
Authority
JP
Japan
Prior art keywords
electrode pad
anisotropic conductive
pad portion
wiring pattern
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28217294A
Other languages
Japanese (ja)
Inventor
Hideo Yamanaka
英雄 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP28217294A priority Critical patent/JPH08146451A/en
Publication of JPH08146451A publication Critical patent/JPH08146451A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/361Assembling flexible printed circuits with other printed circuits

Landscapes

  • Liquid Crystal (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To provide an apparatus for producing a circuit device with which connection having sufficient strength of adhesion and electrical characteristics is realized at a temp. lower than heretofore. CONSTITUTION: This apparatus has a pressing tool 5 to execute impression of ultrasonic waves by pressing an electrode terminal part 2 and a wiring pattern 14 to be electrically connected thereto in a direction of bringing both into tight contact with each other in the state of superposing both on each other via an anisotropically conductive film or anisotropically conductive adhesive layer 3 interposed therebetween and a photoirradiation means for heating the regions where the electrode terminal part 2 and the wiring pattern 14 to be electrically connected thereto are superposed via the anisotropically conductive film or anisotropically conductive adhesive layer 4 by photoirradiation. The electrode terminal part 2 and the wiring pattern 14 to be electrically connected thereto are brought into tight contact with each other by adhering the anisotropically conductive film or anisotropically conductive adhesive 3 by the pressing tool 5 and are heated by ultrasonic impression and photoirradiation by the photoirradiation means, by which both are electrically and mechanically joined.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子回路装置の製造に
使用する回路装置の製造装置に係わる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit device manufacturing apparatus used for manufacturing an electronic circuit device.

【0002】[0002]

【従来の技術】例えば、アクティブマトリクス型のカラ
ー液晶表示パネルは、図5に概略的断面図を示すよう
に、いわゆるCF基板(カラーフィルタが形成された基
板)12とTFT基板1(スイッチング用薄膜トランジ
スタが形成された基板)とを対向させてその間に液晶1
3が封止されて成る。この場合、例えばTFT基板1の
側縁部に外部配線が接続される電極パッド部2が導出形
成され、これら電極パッド部2に対して例えばFPC
(フレキシブルプリント基板)4上に形成された外部配
線としての配線パターン14が、異方性導電膜あるいは
異方性導電接着剤3を介して接続される。
2. Description of the Related Art For example, an active matrix type color liquid crystal display panel has a so-called CF substrate (substrate on which a color filter is formed) 12 and a TFT substrate 1 (switching thin film transistor) as shown in a schematic sectional view of FIG. The substrate on which the liquid crystal 1 is formed and the liquid crystal 1
3 is sealed. In this case, for example, electrode pad portions 2 to which external wirings are connected are formed on the side edge portions of the TFT substrate 1, and the electrode pad portions 2 are formed by, for example, FPC.
A wiring pattern 14 as an external wiring formed on the (flexible printed board) 4 is connected via an anisotropic conductive film or an anisotropic conductive adhesive 3.

【0003】このFPC4は、例えばシート状のポリイ
ミドよりなるフレキシブル基板上に、接着剤によって銅
箔が接着され、この銅箔がパターンエッチングされて所
要の配線パターン14が形成されてなる。
The FPC 4 is formed by adhering a copper foil on a flexible substrate made of, for example, a sheet-shaped polyimide with an adhesive, and pattern-etching the copper foil to form a required wiring pattern 14.

【0004】また、異方性導電膜3Aは、図6Aに示さ
れるように、例えば熱硬化性(エポキシ、ウレタン、ア
クリル)バインダまたは熱可塑性(ポリビニル、ブチラ
ール)バインダからなる絶縁材3c中に、例えばカーボ
ン、金属(ニッケル、半田、銀)、プラスチックメッキ
(金メッキ)による導電性微粒子3gが分散されてシー
ト状に形成されてなり、異方性導電接着剤3Bは、図6
Bに示されるように、例えば熱硬化性(エポキシ、ウレ
タン、アクリル)接着剤または熱可塑性(ポリビニル、
ブチラール)接着剤からなる絶縁剤3c中に例えばカー
ボン、金属(ニッケル、半田、銀)、プラスチックメッ
キ(金メッキ)による導電性微粒子3gが混合分散され
てなる。
Further, as shown in FIG. 6A, the anisotropic conductive film 3A is formed in an insulating material 3c made of, for example, a thermosetting (epoxy, urethane, acrylic) binder or a thermoplastic (polyvinyl, butyral) binder. For example, the anisotropic conductive adhesive 3B shown in FIG. 6 is formed by dispersing conductive fine particles 3g of carbon, metal (nickel, solder, silver), or plastic plating (gold plating) in a sheet shape.
As shown in B, for example thermosetting (epoxy, urethane, acrylic) adhesives or thermoplastics (polyvinyl,
Butyral) An insulating agent 3c made of an adhesive is mixed and dispersed with 3 g of conductive fine particles made of carbon, metal (nickel, solder, silver) or plastic plating (gold plating).

【0005】FPCと電極パッド部との接合は、一般に
その接合部すなわち電極パッド部とFPCとの重ね合わ
せ部を加圧および加熱することによって、異方性導電膜
あるいは異方性導電接着剤中の導電性微粒子による電極
パッド部とFPC上の対応する配線パターンとの電気的
接続を行うとともに、異方性導電膜あるいは異方性導電
接着剤の絶縁材による機械的接合を行うようになされ
る。このときFPCの配線パターンの接合部にあらかじ
め異方性導電膜あるいは異方性導電接着剤を仮圧着して
おいてもよい。
Generally, the FPC and the electrode pad are bonded to each other in the anisotropic conductive film or the anisotropic conductive adhesive by pressurizing and heating the bonding part, that is, the overlapping part of the electrode pad and the FPC. The electrically conductive fine particles are used to electrically connect the electrode pad portion to the corresponding wiring pattern on the FPC, and mechanically bond the insulating film of the anisotropic conductive film or the anisotropic conductive adhesive. . At this time, an anisotropic conductive film or an anisotropic conductive adhesive may be temporarily pressure-bonded to the joint portion of the wiring pattern of the FPC in advance.

【0006】FPCと電極パッド部との接合は、例えば
図6Aに示すように、FPC4の配線パターン14上に
異方性導電膜3Aを配置し、この異方性導電膜3Aを介
してFPC4とTFT基板1とを互いに密着させる方向
に押圧ツール5によって加熱押圧する方法や、図6Bに
示すように、FPC4の配線パターン14上を覆って異
方性導電接着剤3Bを塗布し、この異方性導電性接着剤
3Bを介してFPC4とTFT基板1とを互いに密着さ
せる方向に押圧ツール5の平坦な押圧端面によって加熱
押圧する方法による。このようにして、図7に示すよう
に異方性導電膜3Aあるいは異方性導電接着剤3B中の
導電性微粒子3gによって、電極パッド部2とFPC4
上の対応する配線パターン14との電気的接続を行うと
共に、異方性導電膜3Aあるいは異方性導電接着剤3B
の絶縁材3cによって機械的接合を行うようになされ
る。
For joining the FPC and the electrode pad portion, for example, as shown in FIG. 6A, the anisotropic conductive film 3A is arranged on the wiring pattern 14 of the FPC 4, and the FPC 4 is connected via the anisotropic conductive film 3A. A method of heating and pressing with a pressing tool 5 in a direction in which the TFT substrate 1 and the TFT substrate 1 are brought into close contact with each other, or as shown in FIG. 6B, an anisotropic conductive adhesive 3B is applied to cover the wiring pattern 14 of the FPC 4, and this anisotropic conductive adhesive 3B is applied. By the method of heating and pressing by the flat pressing end surface of the pressing tool 5 in the direction in which the FPC 4 and the TFT substrate 1 are brought into close contact with each other via the conductive conductive adhesive 3B. In this way, as shown in FIG. 7, the electrode pad portion 2 and the FPC 4 are formed by the conductive fine particles 3g in the anisotropic conductive film 3A or the anisotropic conductive adhesive 3B.
The anisotropic conductive film 3A or the anisotropic conductive adhesive 3B is electrically connected to the corresponding wiring pattern 14 above.
The insulating material 3c is used for mechanical joining.

【0007】このときの加圧、加熱は作業時間の短縮の
ために、高温高圧で行う方法がとられるが、このように
すると接合部やその周囲に熱によるダメージを与え、T
FT基板を構成するガラス基板の割れや高温によるTF
Tの特性悪化、CFの変色や液晶の変質による特性悪化
等がみられる。また低温硬化FPCを採用してその接合
を行ったりもしているが、この場合は良好な電気的、機
械的接合がなされていない。またその接合する幅と長さ
は、十分小さい電気的接続抵抗と十分高い接着強度を得
るために数百μmの幅と数mm程度の長さを必要とする
ため、例えばTFT素子の細密高密度化や収率向上を妨
げる要因となっている。
At this time, pressurization and heating are performed at a high temperature and a high pressure in order to shorten the working time. However, in this case, the joint and its surroundings are damaged by heat, and T
TF due to cracking or high temperature of the glass substrate that constitutes the FT substrate
Deterioration of characteristics of T, discoloration of CF and deterioration of liquid crystal are observed. Further, although low-temperature curing FPC is adopted to perform the joining, good electrical and mechanical joining is not achieved in this case. Further, the width and length to be joined require a width of several hundred μm and a length of several mm in order to obtain a sufficiently small electric connection resistance and a sufficiently high adhesive strength. This is a factor that hinders the improvement of production and the improvement of yield.

【0008】また上述した電極パッド部2とFPC4の
配線パターン14との接合を行う押圧ツール5の押圧端
面が平坦な形状であることから、各電極パッド部2の高
さがそろっていないと、押圧ツール5の押圧端面と平行
にならない。また電極パッド部2が正しく設置されてい
ない場合も、電極パッド部2と押圧ツール5の押圧端面
と平行にならない。このとき、多数の電極パッド部の中
で、強く押圧される場所とあまり押圧されない場所がで
きてしまう。
Further, since the pressing end surface of the pressing tool 5 for joining the above-mentioned electrode pad portion 2 and the wiring pattern 14 of the FPC 4 has a flat shape, if the heights of the electrode pad portions 2 are not uniform, It is not parallel to the pressing end surface of the pressing tool 5. Even when the electrode pad portion 2 is not installed correctly, the electrode pad portion 2 and the pressing end surface of the pressing tool 5 are not parallel to each other. At this time, there are places that are strongly pressed and places that are not pressed so much among many electrode pad portions.

【0009】また、押圧が平坦な押圧端面で一様に行わ
れる一方で、隣り合う電極パッド部2間では異方性導電
膜3Aあるいは異方性導電接着剤3Bの押圧が十分なさ
れないため、その押圧力が分散して、電極パッド部2と
これに対応するFPC4の配線パターン14とにかかる
圧力が十分でなく、その接合が有効に行われにくくな
る。
Further, since the pressing is uniformly performed on the flat pressing end surface, the anisotropic conductive film 3A or the anisotropic conductive adhesive 3B is not pressed sufficiently between the adjacent electrode pad portions 2, The pressing force is dispersed, and the pressure applied to the electrode pad portion 2 and the wiring pattern 14 of the FPC 4 corresponding thereto is not sufficient, which makes it difficult to effectively perform the joining.

【0010】また、電極パッド部2と異方性導電膜3A
あるいは異方性導電接着剤3BとFPC4とにかかる押
圧力が十分でない場合は、導電性微粒子3gと電極パッ
ド部2と配線パターン14との接触が不十分となって、
特に導電性微粒子の分散が十分でない場合、導電性微粒
子間に隙間が生じ、電気的接続抵抗が大きくなる。従っ
て、導電性微粒子に分散のよい材料を選択する必要があ
り、これがコスト上昇の原因となっている。
Further, the electrode pad portion 2 and the anisotropic conductive film 3A
Alternatively, when the pressing force applied to the anisotropic conductive adhesive 3B and the FPC 4 is not sufficient, the contact between the conductive fine particles 3g, the electrode pad portion 2 and the wiring pattern 14 becomes insufficient,
Particularly, when the conductive fine particles are not sufficiently dispersed, a gap is generated between the conductive fine particles, and the electrical connection resistance increases. Therefore, it is necessary to select a material having good dispersion in the conductive fine particles, which causes a cost increase.

【0011】このように従来の構成では、例えば液晶表
示パネルなどの回路装置の製造における電極パッド部と
配線パターンとの接合において、高温による例えばTF
T,CF及び液晶の特性不良や、電極パッド部と配線パ
ターンとの接合に十分高い機械的接合強度が得られない
ことや、電気的接続部の抵抗が大きくなるという不都合
があった。
As described above, in the conventional structure, for example, TF due to a high temperature is applied to the connection between the electrode pad portion and the wiring pattern in the manufacture of a circuit device such as a liquid crystal display panel.
There are problems that the characteristics of T, CF, and liquid crystal are poor, that mechanical bonding strength that is sufficiently high for bonding the electrode pad portion and the wiring pattern cannot be obtained, and that the resistance of the electrical connection portion increases.

【0012】[0012]

【発明が解決しようとする課題】本発明は上述した不都
合を改善し、従来より低温で十分な接合(接着)強度や
優れた電気特性を有する電気的接続を実現する回路装置
の製造装置を提案するものである。
DISCLOSURE OF THE INVENTION The present invention proposes an apparatus for manufacturing a circuit device which solves the above-mentioned inconvenience and realizes an electrical connection having sufficient bonding (adhesion) strength and excellent electrical characteristics at a lower temperature than before. To do.

【0013】[0013]

【課題を解決するための手段】本発明装置においては接
合時に押圧ツールで押圧しながら、超音波の印加を行う
ものである。
In the apparatus of the present invention, ultrasonic waves are applied while pressing with a pressing tool at the time of joining.

【0014】第1の本発明は、電極パッド部とこれに電
気的に接続されるべき配線パターンとを押圧接合する超
音波印加がなされる押圧ツールと、接合部を加熱する加
熱手段とを有する構成とする。
The first aspect of the present invention has a pressing tool to which ultrasonic waves are applied to press-bond the electrode pad portion and a wiring pattern to be electrically connected to the electrode pad portion, and heating means for heating the joint portion. The configuration.

【0015】第2の本発明は、図1に示すように電極パ
ッド部2と、これに電気的に接続されるべき配線パター
ン14例えばFPC4上の配線パターンとを、異方性導
電膜もしくは異方性導電接着剤層3を介在させて重ね合
わせた状態で互いに密着させる方向に押圧する超音波印
加がなされる押圧ツール5と、電極パッド部2と、これ
に電気的に接続されるべき配線パターン14との異方性
導電膜もしくは異方性導電接着剤層3を介在させて重ね
合わせた領域を光照射により加熱する光照射手段とを有
する構成とする。
In the second aspect of the present invention, as shown in FIG. 1, the electrode pad portion 2 and the wiring pattern 14 to be electrically connected to the electrode pad portion 2, for example, the wiring pattern on the FPC 4 are anisotropic conductive films or different. A pressing tool 5 to which ultrasonic waves are applied to press in a direction in which they are in close contact with each other in an overlapping state with the interposition of a conductive conductive adhesive layer 3, an electrode pad portion 2, and wiring to be electrically connected to this. Light irradiation means for heating the region superposed with the pattern 14 with the anisotropic conductive film or the anisotropic conductive adhesive layer 3 interposed therebetween is irradiated with light.

【0016】そして、この装置によって電極パッド部2
と、これに電気的に接続されるべき配線パターン14と
を押圧ツール5によって異方性導電膜もしくは異方性導
電接着剤3を介して密着させるとともに超音波印加およ
び光照射手段による光照射による加熱によって電気的お
よび機械的接合を行う。
With this device, the electrode pad portion 2
And the wiring pattern 14 to be electrically connected thereto are brought into close contact with each other by the pressing tool 5 through the anisotropic conductive film or the anisotropic conductive adhesive 3, and ultrasonic wave application and light irradiation by light irradiation means are performed. Electrical and mechanical joining is performed by heating.

【0017】第3の本発明は、図2に示すように電極パ
ッド部2と、これに電気的に接続されるべき配線パター
ン14例えばFPC4上の配線パターンとを、異方性導
電膜もしくは異方性導電接着剤層3を介在させて重ね合
わせた状態で互いに密着させる方向に押圧する超音波印
加がなされる押圧ツール5と、電極パッド部2と、これ
に電気的に接続されるべき配線パターン14との異方性
導電膜もしくは異方性導電接着剤層3を介在させて重ね
合わせた領域をコンスタントヒートもしくはパルスヒー
トするヒート手段とを有する構成とする。
In the third aspect of the present invention, as shown in FIG. 2, the electrode pad portion 2 and the wiring pattern 14 to be electrically connected to the electrode pad portion 2, for example, the wiring pattern on the FPC 4 are anisotropic conductive films or different. A pressing tool 5 to which ultrasonic waves are applied to press in a direction in which they are in close contact with each other in an overlapping state with the interposition of a conductive conductive adhesive layer 3, an electrode pad portion 2, and wiring to be electrically connected to this. It is configured to have a heating means for performing constant heating or pulse heating on a region overlapped with the anisotropic conductive film or anisotropic conductive adhesive layer 3 with the pattern 14.

【0018】そして、この装置によって電極パッド部2
と、これに電気的に接続されるべき配線パターン14と
を押圧ツール5によって異方性導電膜もしくは異方性導
電接着剤3を介して密着させ超音波印加およびヒート手
段による加熱によって電気的および機械的接合を行う。
With this device, the electrode pad portion 2
And the wiring pattern 14 to be electrically connected thereto are brought into close contact with each other by the pressing tool 5 via the anisotropic conductive film or the anisotropic conductive adhesive 3 and electrically and by applying ultrasonic waves and heating by a heating means. Perform mechanical joining.

【0019】第4の本発明は、図4に示すように、上述
の本発明装置において押圧ツール5の押圧端面が複数の
上記電極パッド部2に対応して配置された凸部11を設
ける構成とする。
As shown in FIG. 4, in the fourth aspect of the present invention, in the above-mentioned apparatus of the present invention, the pressing end surface of the pressing tool 5 is provided with the convex portion 11 arranged corresponding to the plurality of the electrode pad portions 2. And

【0020】[0020]

【作用】上述の本発明の構成によれば、電極パッド部2
と配線パターン14とを接合時に押圧ツール5で加熱押
圧しつつ超音波の印加をしたことにより、従来装置に比
して低い温度で確実にその接合を行うことができ、周囲
へのダメージを少なくすることができた。
According to the above-mentioned structure of the present invention, the electrode pad portion 2
By applying ultrasonic waves while heating and pressing the wiring pattern 14 and the wiring pattern 14 with the pressing tool 5 at the time of joining, the joining can be reliably performed at a temperature lower than that of the conventional device, and damage to the surroundings is reduced. We were able to.

【0021】また、第4の本発明によれば、押圧ツール
の押圧端面を電極パッド部に対応して凸部を設けたこと
により、押圧端面が平坦な場合より強い押圧を各電極パ
ッド部に与えることができ、接合部の機械的電気的接合
強度が向上した。
Further, according to the fourth aspect of the present invention, the pressing end surface of the pressing tool is provided with the projection corresponding to the electrode pad portion, so that a stronger pressing force is applied to each electrode pad portion than when the pressing end surface is flat. And the mechanical and electrical bond strength of the joint was improved.

【0022】[0022]

【実施例】以下に、さらに図面を参照して本発明の製造
装置の例を詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of the manufacturing apparatus of the present invention will be described in detail below with reference to the drawings.

【0023】この実施例においては図5で説明した液晶
表示パネルを作製する場合で、この場合前述したように
例えばTFT基板1の側縁部に外部配線としてのFPC
4を電気的および機械的に接合する場合である。
In this embodiment, the liquid crystal display panel described with reference to FIG. 5 is manufactured. In this case, as described above, for example, the FPC as an external wiring is provided on the side edge portion of the TFT substrate 1.
This is the case where 4 is electrically and mechanically joined.

【0024】実施例1 この例は、光照射による加熱下での超音波印加および押
圧をしてその電気的および機械的接合を行う装置であ
る。この装置は、図1に示すように、その接合部を押圧
しながら超音波を印加することができ平板状の押圧端面
を有する押圧ツール5と、光ビーム6(例えばYAGレ
ーザやキセノンランプ、ハロゲンランプ等により発生さ
せることができる)の発生源と、光ビーム6を通過させ
して斜め上方から接合部に照射する集光レンズ7と、集
光レンズ7の下方に配置し集光レンズ7の保護をするシ
ールドガラス8とを含む光照射手段からなる。次にこの
装置によるTFT基板1上の電極パッド部2とFPC4
上の配線パターン14との接合方法について説明する。
この装置に設置したTFT基板1上の電極パッド部2上
に、厚さ30μmの異方性導電膜3を介して、電極パッ
ド部2が接続されるべきFPC4上の配線パターン14
を対向させるようにしてFPC4を載せる。光ビーム6
を発生させ、集光レンズ7を通して斜め上方から照射す
ることによって接合部を充分に加熱した後に、押圧ツー
ル5を上方から下ろして、FPC4の上から押圧を行う
とともに、押圧ツール5から接合部に超音波を印加す
る。異方性導電膜3中の導電粒子3gによって電極パッ
ド部2とFPC4上の対応する配線パターン14との電
気的接続と異方性導電膜3中の絶縁材3cを溶融し硬化
させて機械的接合を行う。
Example 1 In this example, an ultrasonic wave is applied and pressed under heating by light irradiation to electrically and mechanically bond the ultrasonic wave. As shown in FIG. 1, this apparatus includes a pressing tool 5 having a flat pressing end surface capable of applying ultrasonic waves while pressing the joint portion thereof, and a light beam 6 (for example, YAG laser, xenon lamp, halogen). (Which can be generated by a lamp or the like), a condensing lens 7 that allows the light beam 6 to pass through and irradiates the junction from obliquely above, and a condensing lens 7 disposed below the condensing lens 7 It comprises a light irradiation means including a shield glass 8 for protection. Next, the electrode pad portion 2 and the FPC 4 on the TFT substrate 1 by this device are
A method of joining with the upper wiring pattern 14 will be described.
A wiring pattern 14 on the FPC 4 to which the electrode pad section 2 is to be connected via the anisotropic conductive film 3 having a thickness of 30 μm on the electrode pad section 2 on the TFT substrate 1 installed in this device.
The FPC 4 is placed so that they face each other. Light beam 6
Is generated, and the joint portion is sufficiently heated by irradiating it obliquely from above through the condensing lens 7, then the pressing tool 5 is lowered from above, and pressing is performed from above the FPC 4, and from the pressing tool 5 to the joint portion. Apply ultrasonic waves. The electrically conductive particles 3g in the anisotropic conductive film 3 electrically connect the electrode pad portion 2 and the corresponding wiring pattern 14 on the FPC 4, and the insulating material 3c in the anisotropic conductive film 3 is melted and cured to mechanically. Join.

【0025】この例では光ビームを接合部の斜め上方か
ら照射したが、接合部の下方から照射することもでき
る。さらに斜め上方と下方と同時に照射することもでき
る。これは、TFT基板の電極パッド部が、透明導電膜
例えばITO(インジウム・錫の複合酸化物)膜で構成
されているために、光ビームが透過するためである。そ
れにより、異方性導電膜の接合部を加熱することができ
る。
In this example, the light beam is emitted from obliquely above the joint, but it may be emitted from below the joint. Irradiation can also be performed diagonally above and below simultaneously. This is because the electrode pad portion of the TFT substrate is made of a transparent conductive film such as an ITO (composite oxide of indium and tin) film, so that the light beam is transmitted. Thereby, the bonded portion of the anisotropic conductive film can be heated.

【0026】実施例2 この例は、押圧ツールへの加熱と超音波印加と押圧によ
って接合を行う装置である。この装置は図2に示すよう
に、接合部を押圧しながら超音波を印加することがで
き、さらには押圧部内部に抵抗加熱によるヒータ9を有
し接合部を加熱する構成の、押圧端面が平板状の押圧ツ
ール5からなる。次にこの装置によるTFT基板上の電
極パッド部2とFPC4上の配線パターン14との接合
方法について説明する。この装置に設置したTFT基板
1上の電極パッド部2上に、厚さ30μmの異方性導電
膜3を介して、電極パッド部2が接続されるべきFPC
4上の配線パターン14を対向させるようにしてFPC
4を載せる。押圧ツール5を上方から下ろして、FPC
4の上から押圧を行うとともに押圧ツール5から接合部
に超音波を印加する。また同時に押圧ツール内のヒータ
ー9によって接合部を加熱する。このようにして、異方
性導電膜3中の導電粒子3gによって電極パッド部とF
PC4上の対応する配線パターン14との電気的接続と
異方性導電膜3中の絶縁材3cを溶融し硬化させて機械
的接合を行う。
Example 2 This example is an apparatus for performing joining by heating a pressing tool, applying ultrasonic waves, and pressing. As shown in FIG. 2, this device is capable of applying ultrasonic waves while pressing the joint portion, and further has a heater 9 by resistance heating inside the press portion to heat the joint portion. It consists of a flat pressing tool 5. Next, a method of joining the electrode pad portion 2 on the TFT substrate and the wiring pattern 14 on the FPC 4 by this device will be described. The FPC to be connected to the electrode pad portion 2 on the TFT substrate 1 installed in this device via the anisotropic conductive film 3 having a thickness of 30 μm
FPC so that the wiring patterns 14 on 4 are opposed to each other.
Place 4. Push down the pressing tool 5 from above, and
While pressing from above 4, ultrasonic waves are applied from the pressing tool 5 to the joint. At the same time, the heater 9 in the pressing tool heats the joint. In this way, the conductive particles 3 g in the anisotropic conductive film 3 are connected to the electrode pad portion and F
The electrical connection with the corresponding wiring pattern 14 on the PC 4 and the insulating material 3c in the anisotropic conductive film 3 are melted and hardened to perform mechanical joining.

【0027】この例では、押圧ツール5内にヒーターを
有することにより、接合部を加熱する装置であったが、
ヒート手段として外部にヒーターを設けて加熱する構成
でもよい。
In this example, a heater is provided in the pressing tool 5 to heat the joint portion.
A configuration may be adopted in which a heater is provided as an external heating means for heating.

【0028】実施例3 この例は、押圧ツールが複数の電極パッド部のうちの一
部を押圧し、それを繰り返して電極パッド部全体を配線
パターンに接続する装置である。この装置は図3に示す
ように、電極パッド部2と接続する基板の固定をする押
え治具10と、実施例1と同様に電気的および機械的接
合部を押圧しながら超音波を印加することができ、棒状
の押圧ツール5と、光ビーム6を斜め上方から照射して
接合部の加熱を行う光照射手段からなる。次にこの装置
によるTFT基板上の電極パッド部2とFPC4上の配
線パターン14との接合方法について説明する。この装
置に設置したTFT基板1上の電極パッド部2上に、厚
さ30μmの異方性導電膜3Aを介して、電極パッド部
2が接合されるべきFPC4上の配線パターン14を対
向させるようにしてFPC4を載せる。FPC4の上か
ら、押え治具10でFPC4を押さえて固定する。棒状
の押圧ツール5を最初に接続する電極パッド部2の位置
に合わせた後、それと同時に実施例1と同様に、斜め上
方から光ビーム6を照射して接合部の加熱を行って、上
方から下ろしてFPC4の上から押圧を行うとともに押
圧ツール5からその接続部を含む接合部に超音波を印加
する。
Example 3 This example is an apparatus in which a pressing tool presses a part of a plurality of electrode pad parts and repeats this to connect the entire electrode pad part to a wiring pattern. As shown in FIG. 3, this apparatus applies a ultrasonic wave while pressing a holding jig 10 for fixing a substrate connected to the electrode pad portion 2 and an electric and mechanical joint portion as in the first embodiment. It comprises a rod-shaped pressing tool 5 and a light irradiating means for irradiating the light beam 6 obliquely from above to heat the joint. Next, a method of joining the electrode pad portion 2 on the TFT substrate and the wiring pattern 14 on the FPC 4 by this device will be described. The wiring pattern 14 on the FPC 4 to which the electrode pad portion 2 is to be bonded is opposed to the electrode pad portion 2 on the TFT substrate 1 installed in this device via the anisotropic conductive film 3A having a thickness of 30 μm. And put the FPC4. The FPC 4 is pressed and fixed from above the FPC 4 by the holding jig 10. After the rod-shaped pressing tool 5 is first aligned with the position of the electrode pad portion 2 to be connected, at the same time, similarly to the first embodiment, the light beam 6 is irradiated obliquely from above to heat the bonding portion, and then from above. The FPC 4 is lowered and pressed from above the FPC 4, and ultrasonic waves are applied from the pressing tool 5 to the joint portion including the connecting portion.

【0029】このようにして、電極パッド部2の一部を
FPC4の配線パターン14と接続した後、押圧ツール
5を上げて、次に接続する電極パッド部2の位置に合わ
せる。そして、再度押圧ツール5を下ろし、押圧と超音
波印加及び光ビームの照射による加熱を行う。順次これ
を繰り返し、電極パッド部2の全体の電気的および機械
的接合を行う。
In this way, after a part of the electrode pad portion 2 is connected to the wiring pattern 14 of the FPC 4, the pressing tool 5 is raised to align with the position of the electrode pad portion 2 to be connected next. Then, the pressing tool 5 is lowered again, and heating is performed by pressing, applying ultrasonic waves, and irradiating a light beam. This is sequentially repeated to electrically and mechanically bond the entire electrode pad portion 2.

【0030】ここで押え治具10は、一部を押圧して接
合する際に、基板がずれて斜めになったりすることを防
止するために使用している。
Here, the holding jig 10 is used to prevent the substrates from being deviated and inclined when the parts are pressed and joined.

【0031】実施例3では実施例1と同じ光ビームによ
る加熱方法であったが、実施例2と同様のヒーター等に
よる加熱方法を採ることもできる。
In the third embodiment, the heating method by the same light beam as in the first embodiment is used, but the same heating method by a heater or the like as in the second embodiment can be adopted.

【0032】実施例4 この例は、押圧ツールの押圧端面が各電極パッド部に応
じた凸部を有する装置である。この装置は図4に示すよ
うに、押圧ツール5の押圧端面が電極パッド部の大きさ
よりやや大きい凸部を有する装置である。上述の実施例
と同様にTFT基板1上の電極パッド部2上に厚さ30
μmの異方性導電膜3Aを被せて、その上にFPC4を
載せる。FPC4の上から、図4に示すように、押圧端
面が電極パッド部2の形状に合わせた凹凸11を有す
る、押圧ツール5によって、押圧と超音波印加を行う。
ここで凹部の溝の深さは異方性導電膜より薄い10〜2
0μmに、凸部の幅は電極パッド部の幅より大きくす
る。
Example 4 In this example, the pressing end surface of the pressing tool has a convex portion corresponding to each electrode pad portion. As shown in FIG. 4, this device is a device in which the pressing end surface of the pressing tool 5 has a convex portion slightly larger than the size of the electrode pad portion. Similar to the above-described embodiment, the thickness 30 is formed on the electrode pad portion 2 on the TFT substrate 1.
A 3 μA anisotropic conductive film is covered, and an FPC 4 is placed thereon. As shown in FIG. 4, pressing and ultrasonic wave application are performed from above the FPC 4 by the pressing tool 5 whose pressing end surface has the unevenness 11 matching the shape of the electrode pad portion 2.
Here, the depth of the groove of the concave portion is thinner than that of the anisotropic conductive film 10 to 2
The width of the convex portion is set to 0 μm, which is larger than the width of the electrode pad portion.

【0033】これによって、電極パッド部2間の導電性
微粒子はつぶさず、ある程度加熱・加圧することで、接
着強度を確保し、電極パッド部2間の絶縁抵抗を高く維
持できる。また導電性微粒子の分散と粒子径への制約が
少なくなり、電極パッド部2のピッチの縮小と製造コス
トの低減を実現できる。
As a result, the conductive fine particles between the electrode pad portions 2 are not crushed, but are heated and pressed to some extent to secure the adhesive strength and maintain a high insulation resistance between the electrode pad portions 2. Further, the restrictions on the dispersion of the conductive fine particles and the particle diameter are reduced, and the pitch of the electrode pad portions 2 and the manufacturing cost can be reduced.

【0034】超音波印加および加熱の方法は、上述の実
施例1ないしは実施例2と同様の方法をとることができ
る。この例によれば、異方性導電膜3Aの電極パッド部
2の上にある部分を選択的に押圧・加熱することができ
る。
The method of applying ultrasonic waves and the method of heating can be the same as those in the above-described first and second embodiments. According to this example, the portion of the anisotropic conductive film 3A above the electrode pad portion 2 can be selectively pressed and heated.

【0035】尚、上述の実施例は本発明の一例であり、
本発明の要旨を逸脱しない範囲でその他様々な構成が取
り得る。
The above-mentioned embodiment is an example of the present invention.
Various other configurations are possible without departing from the scope of the present invention.

【0036】上記の各実施例における加熱は、一定の加
熱を連続して行う連続ヒートでも、一定時間ごとに周期
的に加熱を行うパルスヒートでも行うことができる。パ
ルスヒートの方が温度上昇が速く、接合速度も速くなる
利点がある。
The heating in each of the above embodiments can be carried out either by continuous heating in which constant heating is continuously performed or by pulse heating in which heating is periodically performed at regular intervals. Pulse heating has the advantages that the temperature rises faster and the bonding speed also increases.

【0037】上述の例は、TFT基板の電極パッド部と
異方性導電膜を介してFPCと接合した例であるが、電
極パッド部として、例えばリードボール、バンプによる
電極パッド部をもつ素子とこの素子をマウントする基板
の配線パターンとの接合に本発明装置を同様にして適用
することができる。またTAB(Tape automated Bondi
ng)において異方性導電膜を介して、シリコンチップの
スタッドバンプ・メッキバンプ電極部と接合する場合に
も有効である。
The above example is an example in which the electrode pad portion of the TFT substrate is joined to the FPC through the anisotropic conductive film. However, as the electrode pad portion, for example, an element having an electrode pad portion by a lead ball or bump is used. The device of the present invention can be similarly applied to the connection with the wiring pattern of the substrate on which this element is mounted. TAB (Tape automated Bondi
ng), it is also effective when bonded to a stud bump / plating bump electrode portion of a silicon chip via an anisotropic conductive film.

【0038】さらにMCM基板やα−SiによるTFT
基板において、ベアチップを異方性導電接着剤を介して
接合するときにも、加熱・加圧と同時に超音波印加する
ことで、本発明の効果を得ることが出来る。
Furthermore, the MCM substrate and the TFT using α-Si
Even when the bare chip is bonded to the substrate via the anisotropic conductive adhesive, the effects of the present invention can be obtained by applying ultrasonic waves at the same time as heating and pressing.

【0039】[0039]

【発明の効果】上述の本発明によれば、異方性導電膜に
よる電極パッド部と例えばFPC基板との接合の際に加
熱や加圧と同時に超音波印加をすることにより、低い加
熱温度で接合することができて、接合部と周囲(ガラス
や液晶等)へのダメージを低減することができる。また
その電気的および機械的接合が確実に行われるので、接
合部の面積すなわち接合部の幅や長さをより小さくする
ことができ、その結果基板等の大きさを縮小し収率を高
めることができる。
According to the present invention described above, ultrasonic waves are applied simultaneously with heating and pressurization at the time of joining an electrode pad portion made of an anisotropic conductive film to, for example, an FPC substrate, so that a low heating temperature can be achieved. Bonding can be performed, and damage to the bonding portion and the surroundings (glass, liquid crystal, etc.) can be reduced. Further, since the electrical and mechanical joining is surely performed, the area of the joining portion, that is, the width and the length of the joining portion can be further reduced, and as a result, the size of the substrate or the like can be reduced and the yield can be increased. You can

【0040】また、押圧ツールの押圧端面を電極パッド
部の大きさに合わせた凹凸を有する形状とした場合に
は、電極パッド部との接続部を選択的に押圧・加熱する
ので、電極パッド部にかかる押圧が大きくなり、接合
(接着)強度を上げ、また異方性導電膜中の絶縁抵抗を
高くできる。また接合部の異方性導電膜の加熱が効率よ
く行えることにより、接合の作業時間の短縮をはかるこ
とができる。さらに付帯的効果として、異方性導電膜中
の導線性微粒子の付着性がよくなるので、その導電膜中
の分散度が低い導電性材料も選択することが可能とな
り、安価な材料の採用ができるため全体のコストダウン
をはかることができる。
Further, when the pressing end surface of the pressing tool is formed into a shape having unevenness corresponding to the size of the electrode pad portion, the connecting portion with the electrode pad portion is selectively pressed and heated, so that the electrode pad portion The pressing force applied to the anisotropic conductive film is increased, the bonding (adhesion) strength is increased, and the insulation resistance in the anisotropic conductive film can be increased. Further, since the anisotropic conductive film in the joint portion can be efficiently heated, the joint work time can be shortened. Furthermore, as an additional effect, the adhesion of the conductive fine particles in the anisotropic conductive film is improved, so that it is possible to select a conductive material having a low degree of dispersion in the conductive film, and an inexpensive material can be adopted. Therefore, it is possible to reduce the overall cost.

【0041】[0041]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の回路装置の製造装置の一例を示す断面
図である。
FIG. 1 is a cross-sectional view showing an example of a circuit device manufacturing apparatus of the present invention.

【図2】本発明の回路装置の製造装置の他の例を示す断
面図である。
FIG. 2 is a cross-sectional view showing another example of the circuit device manufacturing apparatus of the present invention.

【図3】本発明の回路装置の製造装置のさらに他の例を
示す断面図である。
FIG. 3 is a cross-sectional view showing still another example of the circuit device manufacturing apparatus of the present invention.

【図4】本発明の回路装置の製造装置のさらに別の例を
示す断面図である。
FIG. 4 is a cross-sectional view showing still another example of a device for manufacturing a circuit device of the present invention.

【図5】アクティブマトリックス式液晶表示パネルの概
略的断面図である。
FIG. 5 is a schematic cross-sectional view of an active matrix liquid crystal display panel.

【図6】 A 異方性導電膜による接合を示した断面図である。 B 異方性導電接着剤による接合を示した断面図であ
る。
FIG. 6 is a cross-sectional view showing bonding by an A anisotropic conductive film. B is a cross-sectional view showing joining with an anisotropic conductive adhesive.

【図7】図6の状態から、接合を完了した後の状態を示
した断面図である。
7 is a cross-sectional view showing a state after joining is completed from the state of FIG.

【符号の説明】[Explanation of symbols]

1 TFT基板 2 電極パッド部 3 異方性導電膜または異方性導電接着剤 3A 異方性導電膜 3B 異方性導電接着剤 3c 絶縁材 3g 導電性微粒子 4 FPC(フレキシブルプリント基板) 5 押圧ツール 6 光ビーム 7 集光レンズ 8 シールドガラス 9 ヒート手段 10 押え治具 11 押圧ツール押圧端面の凸部 12 CF基板 13 液晶層 14 配線パターン 1 TFT substrate 2 Electrode pad part 3 Anisotropic conductive film or anisotropic conductive adhesive 3A Anisotropic conductive film 3B Anisotropic conductive adhesive 3c Insulating material 3g Conductive fine particles 4 FPC (flexible printed circuit board) 5 Pressing tool 6 Light Beam 7 Condensing Lens 8 Shield Glass 9 Heating Means 10 Holding Tool 11 Pressing Tool Pressing End Face Convex 12 CF Substrate 13 Liquid Crystal Layer 14 Wiring Pattern

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 電極パッド部とこれに電気的に接続され
るべき配線パターンとを押圧接合する超音波印加がなさ
れる押圧ツールと、上記接合部を加熱する加熱手段とを
有することを特徴とする回路装置の製造装置。
1. A pressing tool to which an ultrasonic wave is applied to press-bond an electrode pad part and a wiring pattern to be electrically connected to the electrode pad part, and a heating means for heating the bonding part. Circuit device manufacturing equipment.
【請求項2】 電極パッド部とこれに電気的に接続され
るべき配線パターンとを異方性導電膜もしくは異方性導
電接着剤層を介在させて重ね合わせた状態で互いに密着
させる方向に押圧する超音波印加がなされる押圧ツール
と、 上記電極パッド部とこれに電気的に接続されるべき配線
パターンとの上記異方性導電膜もしくは異方性導電接着
剤層を介在させて重ね合わせた領域を光照射により加熱
する光照射手段とを有し、 上記電極パッド部とこれに電気的に接続されるべき配線
パターンとを上記押圧ツールによって上記異方性導電膜
もしくは異方性導電接着剤を介して密着させるとともに
上記超音波印加および上記光照射手段による光照射によ
る加熱によって電気的および機械的接合を行うことを特
徴とする回路装置の製造装置。
2. An electrode pad portion and a wiring pattern to be electrically connected to the electrode pad portion are pressed in a direction in which they are in close contact with each other with an anisotropic conductive film or an anisotropic conductive adhesive layer interposed therebetween. The ultrasonically applied pressing tool and the electrode pad portion and the wiring pattern to be electrically connected thereto are superposed with the anisotropic conductive film or anisotropic conductive adhesive layer interposed. Light irradiation means for heating a region by light irradiation, and the anisotropic conductive film or anisotropic conductive adhesive for the electrode pad portion and the wiring pattern to be electrically connected thereto by the pressing tool. An apparatus for manufacturing a circuit device, which is characterized in that it is brought into close contact with the substrate by means of an ultrasonic wave and is heated by light irradiation by the light irradiation means to perform electrical and mechanical joining.
【請求項3】 電極パッド部とこれに電気的に接続され
るべき配線パターンとを、異方性導電膜もしくは異方性
導電接着剤層を介在させて重ね合わせた状態で互いに密
着させる方向に押圧する超音波印加がなされる押圧ツー
ルと、 上記電極パッド部とこれに電気的に接続されるべき配線
パターンとの上記異方性導電膜もしくは異方性導電接着
剤層を介在させて重ね合わせた領域をコンスタントヒー
トもしくはパルスヒートするヒート手段とを有し、 上記電極パッド部とこれに電気的に接続されるべき配線
パターンとを上記押圧ツールによって上記異方性導電膜
もしくは異方性導電接着剤を介して密着させ上記超音波
印加および上記ヒート手段による加熱によって電気的お
よび機械的接合を行うことを特徴とする回路装置の製造
装置。
3. An electrode pad portion and a wiring pattern to be electrically connected to the electrode pad portion are attached to each other in a state of being superposed with an anisotropic conductive film or an anisotropic conductive adhesive layer interposed therebetween. A pressing tool to which ultrasonic waves for pressing are applied and the electrode pad portion and the wiring pattern to be electrically connected to the electrode pad portion are superposed with the anisotropic conductive film or anisotropic conductive adhesive layer interposed therebetween. A heating means for performing constant heating or pulse heating on the selected region, and the anisotropic conductive film or anisotropic conductive adhesion of the electrode pad portion and the wiring pattern to be electrically connected thereto by the pressing tool. An apparatus for manufacturing a circuit device, which is brought into close contact via a chemical agent to perform electrical and mechanical joining by applying the ultrasonic wave and heating by the heating means.
【請求項4】 上記押圧ツールの押圧端面が複数の上記
電極パッド部に対応して配置された凸部を有してなるこ
とを特徴とする請求項1または2に記載の回路装置の製
造装置。
4. The apparatus for manufacturing a circuit device according to claim 1, wherein the pressing end surface of the pressing tool has a convex portion arranged corresponding to the plurality of electrode pad portions. .
JP28217294A 1994-11-16 1994-11-16 Apparatus for producing circuit device Pending JPH08146451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28217294A JPH08146451A (en) 1994-11-16 1994-11-16 Apparatus for producing circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28217294A JPH08146451A (en) 1994-11-16 1994-11-16 Apparatus for producing circuit device

Publications (1)

Publication Number Publication Date
JPH08146451A true JPH08146451A (en) 1996-06-07

Family

ID=17649035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28217294A Pending JPH08146451A (en) 1994-11-16 1994-11-16 Apparatus for producing circuit device

Country Status (1)

Country Link
JP (1) JPH08146451A (en)

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JP2001160671A (en) * 1999-12-02 2001-06-12 Hitachi Chem Co Ltd Circuit connecting material
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JP2003006595A (en) * 2001-06-22 2003-01-10 Toppan Forms Co Ltd Formation method for rf-id medium by ultrasonic wave
JP2006302945A (en) * 2005-04-15 2006-11-02 Canon Inc Recording element unit and bonding method
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US7582553B2 (en) 2005-12-20 2009-09-01 Fujitsu Limited Method of bonding flying leads
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4513147B2 (en) * 1999-12-02 2010-07-28 日立化成工業株式会社 Circuit connection method
JP2001160671A (en) * 1999-12-02 2001-06-12 Hitachi Chem Co Ltd Circuit connecting material
JP2003006595A (en) * 2001-06-22 2003-01-10 Toppan Forms Co Ltd Formation method for rf-id medium by ultrasonic wave
KR20020022080A (en) * 2002-01-03 2002-03-23 임종철 Ultrasonic and thermocompressive chip-on-glass bonder of anisotropic conduction flims
JP4632429B2 (en) * 2005-04-15 2011-02-16 キヤノン株式会社 Bonding method
JP2006302945A (en) * 2005-04-15 2006-11-02 Canon Inc Recording element unit and bonding method
US7582553B2 (en) 2005-12-20 2009-09-01 Fujitsu Limited Method of bonding flying leads
US7367108B2 (en) 2005-12-20 2008-05-06 Fujitsu Limited Method of bonding flying leads
JP2009056756A (en) * 2007-09-03 2009-03-19 Seiko Epson Corp Manufacturing method of actuator unit, actuator unit, and liquid jetting head using the same
JP2010062504A (en) * 2008-08-08 2010-03-18 Sony Chemical & Information Device Corp Compression bonding device, compression bonding method, package, and pressing plate
US8296939B2 (en) 2008-08-08 2012-10-30 Sony Chemical & Information Device Corporation Mounting method using dilatancy fluid
US10090223B2 (en) 2016-04-27 2018-10-02 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing same
CN108093563A (en) * 2016-11-23 2018-05-29 G思玛特有限公司 The transparent luminous plate flexible PCB and its assemble method that durability is enhanced
JP2018085501A (en) * 2016-11-23 2018-05-31 ジースマット カンパニー リミテッドG−Smatt Co., Ltd Durable flexible circuit board for transparent electronic display board and assembling method thereof
CN108093563B (en) * 2016-11-23 2020-05-19 G思玛特有限公司 Flexible circuit board for transparent electro-optic panel with enhanced durability and method of assembling the same

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