TW508837B - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
- Publication number
- TW508837B TW508837B TW090104428A TW90104428A TW508837B TW 508837 B TW508837 B TW 508837B TW 090104428 A TW090104428 A TW 090104428A TW 90104428 A TW90104428 A TW 90104428A TW 508837 B TW508837 B TW 508837B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting device
- gate
- current
- patent application
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0404—Matrix technologies
- G09G2300/0417—Special arrangements specific to the use of low carrier mobility technology
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
- G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6719—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6744—Monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000054963 | 2000-02-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW508837B true TW508837B (en) | 2002-11-01 |
Family
ID=18576156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090104428A TW508837B (en) | 2000-02-29 | 2001-02-27 | Light-emitting device |
Country Status (3)
| Country | Link |
|---|---|
| US (10) | US6583776B2 (enExample) |
| JP (1) | JP2001318627A (enExample) |
| TW (1) | TW508837B (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7242392B2 (en) | 2003-01-24 | 2007-07-10 | Hansung Elcomtec Co., Ltd. | Keypad with EL united in keypad rubber and method for fabricating the same |
| US8026877B2 (en) | 2003-03-26 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US8866714B2 (en) | 2002-12-27 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device utilizing the same |
| TWI554148B (zh) * | 2004-07-23 | 2016-10-11 | 半導體能源研究所股份有限公司 | 發光裝置及包含該裝置的電子器具 |
| US11063102B2 (en) | 2001-11-09 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
Families Citing this family (123)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
| JP5210473B2 (ja) | 1999-06-21 | 2013-06-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TW468283B (en) * | 1999-10-12 | 2001-12-11 | Semiconductor Energy Lab | EL display device and a method of manufacturing the same |
| TW471011B (en) | 1999-10-13 | 2002-01-01 | Semiconductor Energy Lab | Thin film forming apparatus |
| TW495808B (en) * | 2000-02-04 | 2002-07-21 | Semiconductor Energy Lab | Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus |
| JP2001318627A (ja) | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| TW521226B (en) * | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
| US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
| CN100380433C (zh) * | 2001-06-22 | 2008-04-09 | 统宝光电股份有限公司 | Oled电流驱动像素电路 |
| JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US11302253B2 (en) | 2001-09-07 | 2022-04-12 | Joled Inc. | El display apparatus |
| EP1424674B1 (en) | 2001-09-07 | 2017-08-02 | Joled Inc. | El display panel, its driving method, and el display apparatus |
| CN101009322B (zh) * | 2001-11-09 | 2012-06-27 | 株式会社半导体能源研究所 | 发光器件 |
| CN1245703C (zh) * | 2001-12-11 | 2006-03-15 | 精工爱普生株式会社 | 显示装置及其电子机器 |
| US7038377B2 (en) * | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
| US6909240B2 (en) | 2002-01-18 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP4490403B2 (ja) * | 2002-01-18 | 2010-06-23 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP4183951B2 (ja) * | 2002-02-25 | 2008-11-19 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7876294B2 (en) | 2002-03-05 | 2011-01-25 | Nec Corporation | Image display and its control method |
| JP3986051B2 (ja) | 2002-04-30 | 2007-10-03 | 株式会社半導体エネルギー研究所 | 発光装置、電子機器 |
| JP4493931B2 (ja) * | 2002-05-13 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TWI269248B (en) | 2002-05-13 | 2006-12-21 | Semiconductor Energy Lab | Display device |
| JP4530083B2 (ja) * | 2002-06-07 | 2010-08-25 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| US20030234392A1 (en) * | 2002-06-25 | 2003-12-25 | Nein-Hui Kung | Active matrix organic light emitting diode display pixel structure |
| US6693296B1 (en) * | 2002-08-07 | 2004-02-17 | Eastman Kodak Company | OLED apparatus including a series of OLED devices |
| JP4646630B2 (ja) * | 2002-12-27 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7652359B2 (en) * | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
| CA2419704A1 (en) | 2003-02-24 | 2004-08-24 | Ignis Innovation Inc. | Method of manufacturing a pixel with organic light-emitting diode |
| JP4734529B2 (ja) * | 2003-02-24 | 2011-07-27 | 奇美電子股▲ふん▼有限公司 | 表示装置 |
| US7532184B2 (en) * | 2003-04-17 | 2009-05-12 | Samsung Mobile Display Co., Ltd. | Flat panel display with improved white balance |
| CN1541038B (zh) * | 2003-04-17 | 2012-07-25 | 三星移动显示器株式会社 | 具有改进的白平衡的平板显示器 |
| US7221095B2 (en) * | 2003-06-16 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for fabricating light emitting device |
| US8937580B2 (en) * | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
| US7566001B2 (en) | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
| CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
| JP4488709B2 (ja) * | 2003-09-29 | 2010-06-23 | 三洋電機株式会社 | 有機elパネル |
| JP4443179B2 (ja) * | 2003-09-29 | 2010-03-31 | 三洋電機株式会社 | 有機elパネル |
| US7027044B2 (en) * | 2004-02-20 | 2006-04-11 | Au Optronics Corporation | Power line arrangement for electroluminescence display devices |
| TWI284875B (en) * | 2004-06-21 | 2007-08-01 | Au Optronics Corp | Method for improving uniformity of current-driving display and current-driving display fabricated thereby |
| CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
| US7105855B2 (en) * | 2004-09-20 | 2006-09-12 | Eastman Kodak Company | Providing driving current arrangement for OLED device |
| GB0424112D0 (en) * | 2004-10-29 | 2004-12-01 | Koninkl Philips Electronics Nv | Active matrix display devices |
| CA2490858A1 (en) | 2004-12-07 | 2006-06-07 | Ignis Innovation Inc. | Driving method for compensated voltage-programming of amoled displays |
| CA2495726A1 (en) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Locally referenced voltage programmed pixel for amoled displays |
| KR101100885B1 (ko) * | 2005-01-31 | 2012-01-02 | 삼성전자주식회사 | 유기 발광 표시 장치용 박막 트랜지스터 표시판 |
| TWI424408B (zh) * | 2005-08-12 | 2014-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置,和安裝有該半導體裝置的顯示裝置和電子裝置 |
| KR100666640B1 (ko) * | 2005-09-15 | 2007-01-09 | 삼성에스디아이 주식회사 | 유기 전계발광 표시장치 |
| KR101209038B1 (ko) * | 2005-11-18 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR101209041B1 (ko) * | 2005-11-25 | 2012-12-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| WO2007063814A1 (en) | 2005-12-02 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
| EP1793366A3 (en) | 2005-12-02 | 2009-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
| TWI570691B (zh) * | 2006-04-05 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置,顯示裝置,和電子裝置 |
| CN101501748B (zh) | 2006-04-19 | 2012-12-05 | 伊格尼斯创新有限公司 | 有源矩阵显示器的稳定驱动设计 |
| US20080062090A1 (en) * | 2006-06-16 | 2008-03-13 | Roger Stewart | Pixel circuits and methods for driving pixels |
| US7679586B2 (en) * | 2006-06-16 | 2010-03-16 | Roger Green Stewart | Pixel circuits and methods for driving pixels |
| US8446394B2 (en) * | 2006-06-16 | 2013-05-21 | Visam Development L.L.C. | Pixel circuits and methods for driving pixels |
| TWI442368B (zh) * | 2006-10-26 | 2014-06-21 | Semiconductor Energy Lab | 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法 |
| TWI340466B (en) * | 2007-03-07 | 2011-04-11 | Au Optronics Corp | Pixel structure of organic electroluminescent display panel and method of making the same |
| US8183766B2 (en) | 2007-03-07 | 2012-05-22 | Au Optronics Corp. | Pixel structure of organic electroluminescent display panel and method of making the same |
| KR101526475B1 (ko) * | 2007-06-29 | 2015-06-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 구동 방법 |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI464510B (zh) * | 2007-07-20 | 2014-12-11 | Semiconductor Energy Lab | 液晶顯示裝置 |
| US8330887B2 (en) * | 2007-07-27 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| JP2008146051A (ja) * | 2007-11-22 | 2008-06-26 | Toshiba Matsushita Display Technology Co Ltd | El表示装置 |
| JP5376826B2 (ja) * | 2008-04-04 | 2013-12-25 | 富士フイルム株式会社 | 半導体装置,半導体装置の製造方法及び表示装置 |
| JP2009288773A (ja) * | 2008-04-30 | 2009-12-10 | Sony Corp | 表示装置 |
| JP2010019950A (ja) * | 2008-07-09 | 2010-01-28 | Seiko Epson Corp | 電気光学装置および電子機器 |
| US8283967B2 (en) | 2009-11-12 | 2012-10-09 | Ignis Innovation Inc. | Stable current source for system integration to display substrate |
| JP5982147B2 (ja) | 2011-04-01 | 2016-08-31 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8922464B2 (en) | 2011-05-11 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device and driving method thereof |
| CN109272933A (zh) | 2011-05-17 | 2019-01-25 | 伊格尼斯创新公司 | 操作显示器的方法 |
| US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
| JP6231735B2 (ja) | 2011-06-01 | 2017-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102168439B1 (ko) | 2011-07-22 | 2020-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
| US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
| US8710505B2 (en) | 2011-08-05 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8829556B2 (en) | 2011-09-01 | 2014-09-09 | General Electric Company | Thermal management in large area flexible OLED assembly |
| JP6050054B2 (ja) | 2011-09-09 | 2016-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
| US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
| US10043794B2 (en) | 2012-03-22 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| TWI587261B (zh) | 2012-06-01 | 2017-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
| JP6228753B2 (ja) | 2012-06-01 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、表示モジュール、及び電子機器 |
| CN103854597B (zh) * | 2012-11-29 | 2016-08-10 | 利亚德光电股份有限公司 | Led显示器及led控制系统 |
| US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
| WO2014140992A1 (en) | 2013-03-15 | 2014-09-18 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an amoled display |
| KR102036247B1 (ko) * | 2013-05-31 | 2019-10-25 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
| CN103500752A (zh) * | 2013-09-27 | 2014-01-08 | 京东方科技集团股份有限公司 | 一种oled像素结构和oled显示装置 |
| KR102132697B1 (ko) | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
| CN103715265B (zh) * | 2013-12-23 | 2016-06-01 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板和显示装置 |
| US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
| KR102381859B1 (ko) | 2013-12-27 | 2022-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| KR102240894B1 (ko) * | 2014-02-26 | 2021-04-16 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
| US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
| TWI552320B (zh) * | 2014-08-18 | 2016-10-01 | 群創光電股份有限公司 | 低色偏之顯示面板 |
| JP6612236B2 (ja) * | 2014-09-04 | 2019-11-27 | 株式会社Joled | 表示装置および電子機器 |
| CA2872563A1 (en) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | High pixel density array architecture |
| KR102435475B1 (ko) | 2015-01-22 | 2022-08-24 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
| US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
| CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
| KR20170020571A (ko) * | 2015-08-12 | 2017-02-23 | 삼성디스플레이 주식회사 | 표시 장치 |
| CA2909813A1 (en) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | High ppi pattern orientation |
| KR102448034B1 (ko) * | 2015-11-23 | 2022-09-28 | 삼성디스플레이 주식회사 | 화소 회로 및 이를 포함하는 유기 발광 표시 장치 |
| DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
| US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
| US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
| CN107422557A (zh) * | 2017-08-11 | 2017-12-01 | 武汉华星光电技术有限公司 | 一种rgbw液晶面板 |
| US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
| KR102596210B1 (ko) * | 2018-05-25 | 2023-10-30 | 엘지디스플레이 주식회사 | Tft 기판 및 이를 포함한 표시장치 |
| KR102600041B1 (ko) * | 2018-06-07 | 2023-11-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN108899329A (zh) * | 2018-07-03 | 2018-11-27 | 京东方科技集团股份有限公司 | 像素阵列及其制备方法、显示面板、显示装置 |
| US20210403339A1 (en) * | 2018-11-07 | 2021-12-30 | Tng Limited | Preparation of titanium dioxide |
| CN109545688B (zh) * | 2018-11-20 | 2022-01-11 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管的沟道区的最终宽长比确定方法及装置 |
| KR102808119B1 (ko) * | 2019-01-11 | 2025-05-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
| CN110660347B (zh) * | 2019-09-24 | 2022-11-22 | 信利(惠州)智能显示有限公司 | Amoled面板模组阻抗的测试方法 |
| US12087222B2 (en) * | 2022-03-31 | 2024-09-10 | Meta Platforms Technologies, Llc | Subpixels with reduced dimensions by using shared switching transistors |
| CN115019735B (zh) * | 2022-06-28 | 2023-12-26 | 惠科股份有限公司 | 像素补偿方法、像素补偿装置及显示装置 |
| KR20240032525A (ko) * | 2022-09-02 | 2024-03-12 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이를 갖는 전계 발광 표시 장치 |
| CN115831999A (zh) * | 2022-11-28 | 2023-03-21 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
| CN118135931A (zh) | 2022-12-02 | 2024-06-04 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3909788A (en) | 1971-09-27 | 1975-09-30 | Litton Systems Inc | Driving circuits for light emitting diodes |
| JPS60104925A (ja) * | 1983-11-14 | 1985-06-10 | Nippon Denso Co Ltd | 液晶素子駆動装置 |
| JPH0622010B2 (ja) * | 1984-09-25 | 1994-03-23 | 株式会社東芝 | 演算表示用集積回路 |
| JPH0713715B2 (ja) | 1987-01-22 | 1995-02-15 | ホシデン株式会社 | カラ−液晶表示素子 |
| EP0321932B1 (en) * | 1987-12-21 | 1994-07-20 | Sharp Kabushiki Kaisha | Imaging apparatus having a plurality of image processing functions |
| US5059148A (en) * | 1987-12-21 | 1991-10-22 | Gte Products Corporation | Thin film flat panel displays and method of manufacture |
| GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
| JPH088674B2 (ja) * | 1989-07-11 | 1996-01-29 | シャープ株式会社 | 表示装置 |
| JPH03153219A (ja) | 1989-11-10 | 1991-07-01 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ |
| EP0499979A3 (en) | 1991-02-16 | 1993-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| JPH0574569A (ja) * | 1991-09-09 | 1993-03-26 | Fuji Xerox Co Ltd | 薄膜elの駆動装置およびその駆動方法 |
| GB9215929D0 (en) | 1992-07-27 | 1992-09-09 | Cambridge Display Tech Ltd | Electroluminescent devices |
| CN1123577A (zh) * | 1993-04-05 | 1996-05-29 | 西尔拉斯逻辑公司 | 液晶显示器中串扰的补偿方法和设备 |
| US5594569A (en) | 1993-07-22 | 1997-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid-crystal electro-optical apparatus and method of manufacturing the same |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| TW264575B (enExample) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| SG54123A1 (en) * | 1993-12-22 | 1998-11-16 | Seiko Epson Corp | Liquid-crystal display system and power supply method |
| TW277111B (enExample) * | 1994-04-20 | 1996-06-01 | Hitachi Seisakusyo Kk | |
| JPH07294961A (ja) | 1994-04-22 | 1995-11-10 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス型表示装置の駆動回路および設計方法 |
| US5714968A (en) * | 1994-08-09 | 1998-02-03 | Nec Corporation | Current-dependent light-emitting element drive circuit for use in active matrix display device |
| JP2639355B2 (ja) | 1994-09-01 | 1997-08-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5818068A (en) | 1994-09-22 | 1998-10-06 | Sharp Kabushiki Kaisha | Thin film transistor circuit and an active matrix type display device |
| TW347477B (en) * | 1994-09-30 | 1998-12-11 | Sanyo Electric Co | Liquid crystal display with storage capacitors for holding electric charges |
| US5652600A (en) | 1994-11-17 | 1997-07-29 | Planar Systems, Inc. | Time multiplexed gray scale approach |
| US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
| US5598021A (en) | 1995-01-18 | 1997-01-28 | Lsi Logic Corporation | MOS structure with hot carrier reduction |
| JPH08213625A (ja) * | 1995-01-31 | 1996-08-20 | Sony Corp | アクティブマトリクス型表示装置及びその製造方法 |
| JP3636777B2 (ja) * | 1995-07-04 | 2005-04-06 | Tdk株式会社 | 画像表示装置 |
| JPH0982970A (ja) * | 1995-09-13 | 1997-03-28 | Toshiba Corp | 非単結晶半導体装置およびその製造方法 |
| JPH09148066A (ja) | 1995-11-24 | 1997-06-06 | Pioneer Electron Corp | 有機el素子 |
| US5812105A (en) | 1996-06-10 | 1998-09-22 | Cree Research, Inc. | Led dot matrix drive method and apparatus |
| US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| JPH1039791A (ja) | 1996-07-22 | 1998-02-13 | Mitsubishi Electric Corp | 有機エレクトロルミネッセンス表示装置 |
| JPH1092745A (ja) * | 1996-09-13 | 1998-04-10 | Toshiba Corp | 結晶半導体の製造方法および製造装置 |
| US5798745A (en) | 1996-09-30 | 1998-08-25 | Rockwell International | LCD panel having tailored pushdown voltages |
| US5841431A (en) * | 1996-11-15 | 1998-11-24 | Intel Corporation | Application of split- and dual-screen LCD panel design in cellular phones |
| US5867140A (en) * | 1996-11-27 | 1999-02-02 | Motorola, Inc. | Display system and circuit therefor |
| JPH10161563A (ja) * | 1996-11-29 | 1998-06-19 | Tdk Corp | 有機el表示装置 |
| JP3297619B2 (ja) | 1996-12-18 | 2002-07-02 | ティーディーケイ株式会社 | 有機elカラーディスプレイ |
| JP4086925B2 (ja) | 1996-12-27 | 2008-05-14 | 株式会社半導体エネルギー研究所 | アクティブマトリクスディスプレイ |
| US5859625A (en) * | 1997-01-13 | 1999-01-12 | Motorola, Inc. | Display driver having a low power mode |
| TW441136B (en) | 1997-01-28 | 2001-06-16 | Casio Computer Co Ltd | An electroluminescent display device and a driving method thereof |
| JP3572473B2 (ja) * | 1997-01-30 | 2004-10-06 | 株式会社ルネサステクノロジ | 液晶表示制御装置 |
| TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JPH10288965A (ja) | 1997-04-14 | 1998-10-27 | Casio Comput Co Ltd | 表示装置 |
| JPH10312173A (ja) | 1997-05-09 | 1998-11-24 | Pioneer Electron Corp | 画像表示装置 |
| US6175345B1 (en) | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
| US5970554A (en) | 1997-09-09 | 1999-10-26 | Snap-Tite Technologies, Inc. | Apparatus and method for controlling the use of carbon dioxide in dry cleaning clothes |
| US6107641A (en) | 1997-09-10 | 2000-08-22 | Xerox Corporation | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
| JPH1197705A (ja) | 1997-09-23 | 1999-04-09 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
| US6229508B1 (en) | 1997-09-29 | 2001-05-08 | Sarnoff Corporation | Active matrix light emitting diode pixel structure and concomitant method |
| EP0913860B1 (en) | 1997-10-29 | 2008-01-16 | Xerox Corporation | Method of manufacturing a thin film transistor |
| US6476784B2 (en) * | 1997-10-31 | 2002-11-05 | Kopin Corporation | Portable display system with memory card reader |
| JPH11153219A (ja) | 1997-11-18 | 1999-06-08 | Mazda Motor Corp | 自動変速機の制御装置 |
| JPH11219133A (ja) * | 1998-02-02 | 1999-08-10 | Tdk Corp | 画像表示装置 |
| JP3543170B2 (ja) | 1998-02-24 | 2004-07-14 | カシオ計算機株式会社 | 電界発光素子及びその製造方法 |
| US6072272A (en) | 1998-05-04 | 2000-06-06 | Motorola, Inc. | Color flat panel display device |
| JP3433101B2 (ja) | 1998-06-03 | 2003-08-04 | 三洋電機株式会社 | 表示装置 |
| JP4223590B2 (ja) * | 1998-06-04 | 2009-02-12 | 東芝松下ディスプレイテクノロジー株式会社 | 多結晶半導体の製造方法 |
| JP3702096B2 (ja) | 1998-06-08 | 2005-10-05 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
| US6313481B1 (en) | 1998-08-06 | 2001-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| US6246070B1 (en) | 1998-08-21 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same |
| WO2000023976A1 (en) | 1998-10-16 | 2000-04-27 | Sarnoff Corporation | Linear array of light-emitting elements |
| US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| JP4540776B2 (ja) | 1998-11-02 | 2010-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
| US6259138B1 (en) | 1998-12-18 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith |
| US6380007B1 (en) * | 1998-12-28 | 2002-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US6777716B1 (en) * | 1999-02-12 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device and method of manufacturing therefor |
| EP1031873A3 (en) | 1999-02-23 | 2005-02-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| JP3850005B2 (ja) | 1999-03-03 | 2006-11-29 | パイオニア株式会社 | スイッチング素子及び有機エレクトロルミネッセンス素子表示装置 |
| JP4073107B2 (ja) | 1999-03-18 | 2008-04-09 | 三洋電機株式会社 | アクティブ型el表示装置 |
| JP4906017B2 (ja) * | 1999-09-24 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TW540251B (en) | 1999-09-24 | 2003-07-01 | Semiconductor Energy Lab | EL display device and method for driving the same |
| JP2001109399A (ja) | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | カラー表示装置 |
| TW525305B (en) | 2000-02-22 | 2003-03-21 | Semiconductor Energy Lab | Self-light-emitting device and method of manufacturing the same |
| JP2001318627A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US6562600B1 (en) * | 2001-06-25 | 2003-05-13 | The United States Of America As Represented By The Secretary Of Agriculture | Production of cyclic alternan tetrasaccharides from oligosaccharide substrates |
-
2001
- 2001-02-26 JP JP2001050583A patent/JP2001318627A/ja not_active Withdrawn
- 2001-02-27 US US09/796,412 patent/US6583776B2/en not_active Expired - Lifetime
- 2001-02-27 TW TW090104428A patent/TW508837B/zh not_active IP Right Cessation
-
2003
- 2003-06-23 US US10/600,866 patent/US7129917B2/en not_active Expired - Fee Related
-
2006
- 2006-10-26 US US11/553,197 patent/US7995010B2/en not_active Expired - Fee Related
-
2011
- 2011-01-20 US US13/010,118 patent/US8493295B2/en not_active Expired - Fee Related
-
2013
- 2013-07-19 US US13/946,002 patent/US8674909B2/en not_active Expired - Fee Related
-
2014
- 2014-03-06 US US14/198,756 patent/US9035853B2/en not_active Expired - Fee Related
-
2015
- 2015-05-13 US US14/710,659 patent/US9178004B2/en not_active Expired - Fee Related
- 2015-10-28 US US14/924,793 patent/US9331130B2/en not_active Expired - Fee Related
-
2016
- 2016-04-19 US US15/132,332 patent/US9502483B2/en not_active Expired - Fee Related
- 2016-11-08 US US15/345,677 patent/US10032840B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063102B2 (en) | 2001-11-09 | 2021-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US8866714B2 (en) | 2002-12-27 | 2014-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device utilizing the same |
| US9620060B2 (en) | 2002-12-27 | 2017-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistors, switches and capacitor, and electronic device utilizing the same |
| US7242392B2 (en) | 2003-01-24 | 2007-07-10 | Hansung Elcomtec Co., Ltd. | Keypad with EL united in keypad rubber and method for fabricating the same |
| US8026877B2 (en) | 2003-03-26 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US8659523B2 (en) | 2003-03-26 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US9300771B2 (en) | 2003-03-26 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US9698207B2 (en) | 2003-03-26 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| US11430845B2 (en) | 2003-03-26 | 2022-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Element substrate and light-emitting device |
| TWI554148B (zh) * | 2004-07-23 | 2016-10-11 | 半導體能源研究所股份有限公司 | 發光裝置及包含該裝置的電子器具 |
| US9520532B2 (en) | 2004-07-23 | 2016-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170154940A1 (en) | 2017-06-01 |
| US20110109604A1 (en) | 2011-05-12 |
| US20130299802A1 (en) | 2013-11-14 |
| US20010038098A1 (en) | 2001-11-08 |
| US8674909B2 (en) | 2014-03-18 |
| US7995010B2 (en) | 2011-08-09 |
| US20160233279A1 (en) | 2016-08-11 |
| US20040080470A1 (en) | 2004-04-29 |
| US8493295B2 (en) | 2013-07-23 |
| US20070052634A1 (en) | 2007-03-08 |
| US9178004B2 (en) | 2015-11-03 |
| US7129917B2 (en) | 2006-10-31 |
| US20160049452A1 (en) | 2016-02-18 |
| US9331130B2 (en) | 2016-05-03 |
| JP2001318627A (ja) | 2001-11-16 |
| US6583776B2 (en) | 2003-06-24 |
| US9035853B2 (en) | 2015-05-19 |
| US9502483B2 (en) | 2016-11-22 |
| US10032840B2 (en) | 2018-07-24 |
| US20140183511A1 (en) | 2014-07-03 |
| US20150243717A1 (en) | 2015-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW508837B (en) | Light-emitting device | |
| US9431466B2 (en) | Light emitting device and electronic appliance | |
| TWI242391B (en) | Light emitting device | |
| US7639248B2 (en) | Display device and electronic device | |
| KR100780570B1 (ko) | 발광 장치 제조 방법 | |
| US20120205671A1 (en) | Semiconductor device and manufacturing method thereof | |
| KR20010052008A (ko) | El 디스플레이 디바이스 및 전자 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |