TW508837B - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
TW508837B
TW508837B TW090104428A TW90104428A TW508837B TW 508837 B TW508837 B TW 508837B TW 090104428 A TW090104428 A TW 090104428A TW 90104428 A TW90104428 A TW 90104428A TW 508837 B TW508837 B TW 508837B
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TW
Taiwan
Prior art keywords
light
emitting device
gate
current
patent application
Prior art date
Application number
TW090104428A
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English (en)
Chinese (zh)
Inventor
Shunpei Yamazaki
Jun Koyama
Mai Osada
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Semiconductor Energy Lab
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Publication of TW508837B publication Critical patent/TW508837B/zh

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    • GPHYSICS
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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    • G09G3/3275Details of drivers for data electrodes
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    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/6739Conductor-insulator-semiconductor electrodes
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    • H10D30/00Field-effect transistors [FET]
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    • H10D30/6743Silicon
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    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/6743Silicon
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    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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    • H10D86/0251Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7242392B2 (en) 2003-01-24 2007-07-10 Hansung Elcomtec Co., Ltd. Keypad with EL united in keypad rubber and method for fabricating the same
US8026877B2 (en) 2003-03-26 2011-09-27 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US8866714B2 (en) 2002-12-27 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
TWI554148B (zh) * 2004-07-23 2016-10-11 半導體能源研究所股份有限公司 發光裝置及包含該裝置的電子器具
US11063102B2 (en) 2001-11-09 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
JP5210473B2 (ja) 1999-06-21 2013-06-12 株式会社半導体エネルギー研究所 表示装置
TW468283B (en) * 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
TW495808B (en) * 2000-02-04 2002-07-21 Semiconductor Energy Lab Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
JP2001318627A (ja) 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
US7569849B2 (en) 2001-02-16 2009-08-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
CN100380433C (zh) * 2001-06-22 2008-04-09 统宝光电股份有限公司 Oled电流驱动像素电路
JP4267266B2 (ja) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11302253B2 (en) 2001-09-07 2022-04-12 Joled Inc. El display apparatus
EP1424674B1 (en) 2001-09-07 2017-08-02 Joled Inc. El display panel, its driving method, and el display apparatus
CN101009322B (zh) * 2001-11-09 2012-06-27 株式会社半导体能源研究所 发光器件
CN1245703C (zh) * 2001-12-11 2006-03-15 精工爱普生株式会社 显示装置及其电子机器
US7038377B2 (en) * 2002-01-16 2006-05-02 Seiko Epson Corporation Display device with a narrow frame
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4490403B2 (ja) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 発光装置
JP4183951B2 (ja) * 2002-02-25 2008-11-19 株式会社半導体エネルギー研究所 発光装置
US7876294B2 (en) 2002-03-05 2011-01-25 Nec Corporation Image display and its control method
JP3986051B2 (ja) 2002-04-30 2007-10-03 株式会社半導体エネルギー研究所 発光装置、電子機器
JP4493931B2 (ja) * 2002-05-13 2010-06-30 株式会社半導体エネルギー研究所 表示装置
TWI269248B (en) 2002-05-13 2006-12-21 Semiconductor Energy Lab Display device
JP4530083B2 (ja) * 2002-06-07 2010-08-25 セイコーエプソン株式会社 電気光学装置及び電子機器
US20030234392A1 (en) * 2002-06-25 2003-12-25 Nein-Hui Kung Active matrix organic light emitting diode display pixel structure
US6693296B1 (en) * 2002-08-07 2004-02-17 Eastman Kodak Company OLED apparatus including a series of OLED devices
JP4646630B2 (ja) * 2002-12-27 2011-03-09 株式会社半導体エネルギー研究所 表示装置
US7652359B2 (en) * 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
CA2419704A1 (en) 2003-02-24 2004-08-24 Ignis Innovation Inc. Method of manufacturing a pixel with organic light-emitting diode
JP4734529B2 (ja) * 2003-02-24 2011-07-27 奇美電子股▲ふん▼有限公司 表示装置
US7532184B2 (en) * 2003-04-17 2009-05-12 Samsung Mobile Display Co., Ltd. Flat panel display with improved white balance
CN1541038B (zh) * 2003-04-17 2012-07-25 三星移动显示器株式会社 具有改进的白平衡的平板显示器
US7221095B2 (en) * 2003-06-16 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for fabricating light emitting device
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
US7566001B2 (en) 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
JP4488709B2 (ja) * 2003-09-29 2010-06-23 三洋電機株式会社 有機elパネル
JP4443179B2 (ja) * 2003-09-29 2010-03-31 三洋電機株式会社 有機elパネル
US7027044B2 (en) * 2004-02-20 2006-04-11 Au Optronics Corporation Power line arrangement for electroluminescence display devices
TWI284875B (en) * 2004-06-21 2007-08-01 Au Optronics Corp Method for improving uniformity of current-driving display and current-driving display fabricated thereby
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
US7105855B2 (en) * 2004-09-20 2006-09-12 Eastman Kodak Company Providing driving current arrangement for OLED device
GB0424112D0 (en) * 2004-10-29 2004-12-01 Koninkl Philips Electronics Nv Active matrix display devices
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
CA2495726A1 (en) 2005-01-28 2006-07-28 Ignis Innovation Inc. Locally referenced voltage programmed pixel for amoled displays
KR101100885B1 (ko) * 2005-01-31 2012-01-02 삼성전자주식회사 유기 발광 표시 장치용 박막 트랜지스터 표시판
TWI424408B (zh) * 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置,和安裝有該半導體裝置的顯示裝置和電子裝置
KR100666640B1 (ko) * 2005-09-15 2007-01-09 삼성에스디아이 주식회사 유기 전계발광 표시장치
KR101209038B1 (ko) * 2005-11-18 2012-12-06 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101209041B1 (ko) * 2005-11-25 2012-12-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2007063814A1 (en) 2005-12-02 2007-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
EP1793366A3 (en) 2005-12-02 2009-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI570691B (zh) * 2006-04-05 2017-02-11 半導體能源研究所股份有限公司 半導體裝置,顯示裝置,和電子裝置
CN101501748B (zh) 2006-04-19 2012-12-05 伊格尼斯创新有限公司 有源矩阵显示器的稳定驱动设计
US20080062090A1 (en) * 2006-06-16 2008-03-13 Roger Stewart Pixel circuits and methods for driving pixels
US7679586B2 (en) * 2006-06-16 2010-03-16 Roger Green Stewart Pixel circuits and methods for driving pixels
US8446394B2 (en) * 2006-06-16 2013-05-21 Visam Development L.L.C. Pixel circuits and methods for driving pixels
TWI442368B (zh) * 2006-10-26 2014-06-21 Semiconductor Energy Lab 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法
TWI340466B (en) * 2007-03-07 2011-04-11 Au Optronics Corp Pixel structure of organic electroluminescent display panel and method of making the same
US8183766B2 (en) 2007-03-07 2012-05-22 Au Optronics Corp. Pixel structure of organic electroluminescent display panel and method of making the same
KR101526475B1 (ko) * 2007-06-29 2015-06-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 구동 방법
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP2008146051A (ja) * 2007-11-22 2008-06-26 Toshiba Matsushita Display Technology Co Ltd El表示装置
JP5376826B2 (ja) * 2008-04-04 2013-12-25 富士フイルム株式会社 半導体装置,半導体装置の製造方法及び表示装置
JP2009288773A (ja) * 2008-04-30 2009-12-10 Sony Corp 表示装置
JP2010019950A (ja) * 2008-07-09 2010-01-28 Seiko Epson Corp 電気光学装置および電子機器
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
JP5982147B2 (ja) 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
US8922464B2 (en) 2011-05-11 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device and driving method thereof
CN109272933A (zh) 2011-05-17 2019-01-25 伊格尼斯创新公司 操作显示器的方法
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
JP6231735B2 (ja) 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
KR102168439B1 (ko) 2011-07-22 2020-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US8710505B2 (en) 2011-08-05 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8829556B2 (en) 2011-09-01 2014-09-09 General Electric Company Thermal management in large area flexible OLED assembly
JP6050054B2 (ja) 2011-09-09 2016-12-21 株式会社半導体エネルギー研究所 半導体装置
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US10043794B2 (en) 2012-03-22 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI587261B (zh) 2012-06-01 2017-06-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP6228753B2 (ja) 2012-06-01 2017-11-08 株式会社半導体エネルギー研究所 半導体装置、表示装置、表示モジュール、及び電子機器
CN103854597B (zh) * 2012-11-29 2016-08-10 利亚德光电股份有限公司 Led显示器及led控制系统
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
WO2014140992A1 (en) 2013-03-15 2014-09-18 Ignis Innovation Inc. Dynamic adjustment of touch resolutions on an amoled display
KR102036247B1 (ko) * 2013-05-31 2019-10-25 삼성디스플레이 주식회사 화소 및 이를 이용한 유기전계발광 표시장치
CN103500752A (zh) * 2013-09-27 2014-01-08 京东方科技集团股份有限公司 一种oled像素结构和oled显示装置
KR102132697B1 (ko) 2013-12-05 2020-07-10 엘지디스플레이 주식회사 휘어진 디스플레이 장치
CN103715265B (zh) * 2013-12-23 2016-06-01 京东方科技集团股份有限公司 薄膜晶体管、阵列基板和显示装置
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
KR102381859B1 (ko) 2013-12-27 2022-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
KR102240894B1 (ko) * 2014-02-26 2021-04-16 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US10997901B2 (en) 2014-02-28 2021-05-04 Ignis Innovation Inc. Display system
US10176752B2 (en) 2014-03-24 2019-01-08 Ignis Innovation Inc. Integrated gate driver
TWI552320B (zh) * 2014-08-18 2016-10-01 群創光電股份有限公司 低色偏之顯示面板
JP6612236B2 (ja) * 2014-09-04 2019-11-27 株式会社Joled 表示装置および電子機器
CA2872563A1 (en) 2014-11-28 2016-05-28 Ignis Innovation Inc. High pixel density array architecture
KR102435475B1 (ko) 2015-01-22 2022-08-24 삼성디스플레이 주식회사 유기 발광 표시 장치
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
KR20170020571A (ko) * 2015-08-12 2017-02-23 삼성디스플레이 주식회사 표시 장치
CA2909813A1 (en) 2015-10-26 2017-04-26 Ignis Innovation Inc High ppi pattern orientation
KR102448034B1 (ko) * 2015-11-23 2022-09-28 삼성디스플레이 주식회사 화소 회로 및 이를 포함하는 유기 발광 표시 장치
DE102017222059A1 (de) 2016-12-06 2018-06-07 Ignis Innovation Inc. Pixelschaltungen zur Minderung von Hysterese
US10714018B2 (en) 2017-05-17 2020-07-14 Ignis Innovation Inc. System and method for loading image correction data for displays
US11025899B2 (en) 2017-08-11 2021-06-01 Ignis Innovation Inc. Optical correction systems and methods for correcting non-uniformity of emissive display devices
CN107422557A (zh) * 2017-08-11 2017-12-01 武汉华星光电技术有限公司 一种rgbw液晶面板
US10971078B2 (en) 2018-02-12 2021-04-06 Ignis Innovation Inc. Pixel measurement through data line
KR102596210B1 (ko) * 2018-05-25 2023-10-30 엘지디스플레이 주식회사 Tft 기판 및 이를 포함한 표시장치
KR102600041B1 (ko) * 2018-06-07 2023-11-08 삼성디스플레이 주식회사 유기 발광 표시 장치
CN108899329A (zh) * 2018-07-03 2018-11-27 京东方科技集团股份有限公司 像素阵列及其制备方法、显示面板、显示装置
US20210403339A1 (en) * 2018-11-07 2021-12-30 Tng Limited Preparation of titanium dioxide
CN109545688B (zh) * 2018-11-20 2022-01-11 合肥鑫晟光电科技有限公司 薄膜晶体管的沟道区的最终宽长比确定方法及装置
KR102808119B1 (ko) * 2019-01-11 2025-05-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN110660347B (zh) * 2019-09-24 2022-11-22 信利(惠州)智能显示有限公司 Amoled面板模组阻抗的测试方法
US12087222B2 (en) * 2022-03-31 2024-09-10 Meta Platforms Technologies, Llc Subpixels with reduced dimensions by using shared switching transistors
CN115019735B (zh) * 2022-06-28 2023-12-26 惠科股份有限公司 像素补偿方法、像素补偿装置及显示装置
KR20240032525A (ko) * 2022-09-02 2024-03-12 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 갖는 전계 발광 표시 장치
CN115831999A (zh) * 2022-11-28 2023-03-21 上海天马微电子有限公司 一种显示面板及显示装置
CN118135931A (zh) 2022-12-02 2024-06-04 群创光电股份有限公司 电子装置

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909788A (en) 1971-09-27 1975-09-30 Litton Systems Inc Driving circuits for light emitting diodes
JPS60104925A (ja) * 1983-11-14 1985-06-10 Nippon Denso Co Ltd 液晶素子駆動装置
JPH0622010B2 (ja) * 1984-09-25 1994-03-23 株式会社東芝 演算表示用集積回路
JPH0713715B2 (ja) 1987-01-22 1995-02-15 ホシデン株式会社 カラ−液晶表示素子
EP0321932B1 (en) * 1987-12-21 1994-07-20 Sharp Kabushiki Kaisha Imaging apparatus having a plurality of image processing functions
US5059148A (en) * 1987-12-21 1991-10-22 Gte Products Corporation Thin film flat panel displays and method of manufacture
GB8909011D0 (en) 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
JPH088674B2 (ja) * 1989-07-11 1996-01-29 シャープ株式会社 表示装置
JPH03153219A (ja) 1989-11-10 1991-07-01 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH0574569A (ja) * 1991-09-09 1993-03-26 Fuji Xerox Co Ltd 薄膜elの駆動装置およびその駆動方法
GB9215929D0 (en) 1992-07-27 1992-09-09 Cambridge Display Tech Ltd Electroluminescent devices
CN1123577A (zh) * 1993-04-05 1996-05-29 西尔拉斯逻辑公司 液晶显示器中串扰的补偿方法和设备
US5594569A (en) 1993-07-22 1997-01-14 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal electro-optical apparatus and method of manufacturing the same
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
SG54123A1 (en) * 1993-12-22 1998-11-16 Seiko Epson Corp Liquid-crystal display system and power supply method
TW277111B (enExample) * 1994-04-20 1996-06-01 Hitachi Seisakusyo Kk
JPH07294961A (ja) 1994-04-22 1995-11-10 Semiconductor Energy Lab Co Ltd アクティブマトリクス型表示装置の駆動回路および設計方法
US5714968A (en) * 1994-08-09 1998-02-03 Nec Corporation Current-dependent light-emitting element drive circuit for use in active matrix display device
JP2639355B2 (ja) 1994-09-01 1997-08-13 日本電気株式会社 半導体装置およびその製造方法
JP3464287B2 (ja) 1994-09-05 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5818068A (en) 1994-09-22 1998-10-06 Sharp Kabushiki Kaisha Thin film transistor circuit and an active matrix type display device
TW347477B (en) * 1994-09-30 1998-12-11 Sanyo Electric Co Liquid crystal display with storage capacitors for holding electric charges
US5652600A (en) 1994-11-17 1997-07-29 Planar Systems, Inc. Time multiplexed gray scale approach
US5684365A (en) 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
US5598021A (en) 1995-01-18 1997-01-28 Lsi Logic Corporation MOS structure with hot carrier reduction
JPH08213625A (ja) * 1995-01-31 1996-08-20 Sony Corp アクティブマトリクス型表示装置及びその製造方法
JP3636777B2 (ja) * 1995-07-04 2005-04-06 Tdk株式会社 画像表示装置
JPH0982970A (ja) * 1995-09-13 1997-03-28 Toshiba Corp 非単結晶半導体装置およびその製造方法
JPH09148066A (ja) 1995-11-24 1997-06-06 Pioneer Electron Corp 有機el素子
US5812105A (en) 1996-06-10 1998-09-22 Cree Research, Inc. Led dot matrix drive method and apparatus
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JPH1039791A (ja) 1996-07-22 1998-02-13 Mitsubishi Electric Corp 有機エレクトロルミネッセンス表示装置
JPH1092745A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 結晶半導体の製造方法および製造装置
US5798745A (en) 1996-09-30 1998-08-25 Rockwell International LCD panel having tailored pushdown voltages
US5841431A (en) * 1996-11-15 1998-11-24 Intel Corporation Application of split- and dual-screen LCD panel design in cellular phones
US5867140A (en) * 1996-11-27 1999-02-02 Motorola, Inc. Display system and circuit therefor
JPH10161563A (ja) * 1996-11-29 1998-06-19 Tdk Corp 有機el表示装置
JP3297619B2 (ja) 1996-12-18 2002-07-02 ティーディーケイ株式会社 有機elカラーディスプレイ
JP4086925B2 (ja) 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
US5859625A (en) * 1997-01-13 1999-01-12 Motorola, Inc. Display driver having a low power mode
TW441136B (en) 1997-01-28 2001-06-16 Casio Computer Co Ltd An electroluminescent display device and a driving method thereof
JP3572473B2 (ja) * 1997-01-30 2004-10-06 株式会社ルネサステクノロジ 液晶表示制御装置
TW379360B (en) 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JPH10288965A (ja) 1997-04-14 1998-10-27 Casio Comput Co Ltd 表示装置
JPH10312173A (ja) 1997-05-09 1998-11-24 Pioneer Electron Corp 画像表示装置
US6175345B1 (en) 1997-06-02 2001-01-16 Canon Kabushiki Kaisha Electroluminescence device, electroluminescence apparatus, and production methods thereof
US5970554A (en) 1997-09-09 1999-10-26 Snap-Tite Technologies, Inc. Apparatus and method for controlling the use of carbon dioxide in dry cleaning clothes
US6107641A (en) 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
JPH1197705A (ja) 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
US6229508B1 (en) 1997-09-29 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
EP0913860B1 (en) 1997-10-29 2008-01-16 Xerox Corporation Method of manufacturing a thin film transistor
US6476784B2 (en) * 1997-10-31 2002-11-05 Kopin Corporation Portable display system with memory card reader
JPH11153219A (ja) 1997-11-18 1999-06-08 Mazda Motor Corp 自動変速機の制御装置
JPH11219133A (ja) * 1998-02-02 1999-08-10 Tdk Corp 画像表示装置
JP3543170B2 (ja) 1998-02-24 2004-07-14 カシオ計算機株式会社 電界発光素子及びその製造方法
US6072272A (en) 1998-05-04 2000-06-06 Motorola, Inc. Color flat panel display device
JP3433101B2 (ja) 1998-06-03 2003-08-04 三洋電機株式会社 表示装置
JP4223590B2 (ja) * 1998-06-04 2009-02-12 東芝松下ディスプレイテクノロジー株式会社 多結晶半導体の製造方法
JP3702096B2 (ja) 1998-06-08 2005-10-05 三洋電機株式会社 薄膜トランジスタ及び表示装置
US6313481B1 (en) 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US6246070B1 (en) 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
WO2000023976A1 (en) 1998-10-16 2000-04-27 Sarnoff Corporation Linear array of light-emitting elements
US6274887B1 (en) 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
JP4540776B2 (ja) 1998-11-02 2010-09-08 株式会社半導体エネルギー研究所 半導体装置および電子機器
US6384804B1 (en) * 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6380007B1 (en) * 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US6777716B1 (en) * 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
EP1031873A3 (en) 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP3850005B2 (ja) 1999-03-03 2006-11-29 パイオニア株式会社 スイッチング素子及び有機エレクトロルミネッセンス素子表示装置
JP4073107B2 (ja) 1999-03-18 2008-04-09 三洋電機株式会社 アクティブ型el表示装置
JP4906017B2 (ja) * 1999-09-24 2012-03-28 株式会社半導体エネルギー研究所 表示装置
TW540251B (en) 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
JP2001109399A (ja) 1999-10-04 2001-04-20 Sanyo Electric Co Ltd カラー表示装置
TW525305B (en) 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
JP2001318627A (ja) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
US6562600B1 (en) * 2001-06-25 2003-05-13 The United States Of America As Represented By The Secretary Of Agriculture Production of cyclic alternan tetrasaccharides from oligosaccharide substrates

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11063102B2 (en) 2001-11-09 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8866714B2 (en) 2002-12-27 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device utilizing the same
US9620060B2 (en) 2002-12-27 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistors, switches and capacitor, and electronic device utilizing the same
US7242392B2 (en) 2003-01-24 2007-07-10 Hansung Elcomtec Co., Ltd. Keypad with EL united in keypad rubber and method for fabricating the same
US8026877B2 (en) 2003-03-26 2011-09-27 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US8659523B2 (en) 2003-03-26 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US9300771B2 (en) 2003-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US9698207B2 (en) 2003-03-26 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
US11430845B2 (en) 2003-03-26 2022-08-30 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light-emitting device
TWI554148B (zh) * 2004-07-23 2016-10-11 半導體能源研究所股份有限公司 發光裝置及包含該裝置的電子器具
US9520532B2 (en) 2004-07-23 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same

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US20110109604A1 (en) 2011-05-12
US20130299802A1 (en) 2013-11-14
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US20160233279A1 (en) 2016-08-11
US20040080470A1 (en) 2004-04-29
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US20070052634A1 (en) 2007-03-08
US9178004B2 (en) 2015-11-03
US7129917B2 (en) 2006-10-31
US20160049452A1 (en) 2016-02-18
US9331130B2 (en) 2016-05-03
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US6583776B2 (en) 2003-06-24
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US9502483B2 (en) 2016-11-22
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US20140183511A1 (en) 2014-07-03
US20150243717A1 (en) 2015-08-27

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