TW478171B - Thin film semiconductor device and method for producing thereof - Google Patents
Thin film semiconductor device and method for producing thereof Download PDFInfo
- Publication number
- TW478171B TW478171B TW090103950A TW90103950A TW478171B TW 478171 B TW478171 B TW 478171B TW 090103950 A TW090103950 A TW 090103950A TW 90103950 A TW90103950 A TW 90103950A TW 478171 B TW478171 B TW 478171B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- polycrystalline
- transistor
- composition ratio
- image display
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title description 5
- 239000013078 crystal Substances 0.000 claims abstract description 61
- 239000000203 mixture Substances 0.000 claims abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000001276 controlling effect Effects 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 abstract description 7
- 230000008025 crystallization Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000005191 phase separation Methods 0.000 abstract description 5
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 230000000452 restraining effect Effects 0.000 abstract 3
- 239000011521 glass Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005685 electric field effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000010956 selective crystallization Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6731—Top-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001025531A JP4358998B2 (ja) | 2001-02-01 | 2001-02-01 | 薄膜トランジスタ装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW478171B true TW478171B (en) | 2002-03-01 |
Family
ID=18890502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090103950A TW478171B (en) | 2001-02-01 | 2001-02-21 | Thin film semiconductor device and method for producing thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6521909B2 (enExample) |
| JP (1) | JP4358998B2 (enExample) |
| KR (1) | KR100761619B1 (enExample) |
| TW (1) | TW478171B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442958B2 (en) | 2002-05-17 | 2008-10-28 | Hitachi, Ltd. | Thin film semiconductor device |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3980159B2 (ja) * | 1998-03-05 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3737914B2 (ja) * | 1999-09-02 | 2006-01-25 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6882012B2 (en) * | 2000-02-28 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| JP3559962B2 (ja) * | 2000-09-04 | 2004-09-02 | 日本航空電子工業株式会社 | 熱電変換材料及びその製造方法 |
| US6746942B2 (en) * | 2000-09-05 | 2004-06-08 | Sony Corporation | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
| JP3904512B2 (ja) * | 2002-12-24 | 2007-04-11 | シャープ株式会社 | 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器 |
| JP2004207616A (ja) * | 2002-12-26 | 2004-07-22 | Hitachi Displays Ltd | 表示装置 |
| KR100975523B1 (ko) * | 2003-12-30 | 2010-08-13 | 삼성전자주식회사 | 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ |
| JP4567984B2 (ja) * | 2004-01-30 | 2010-10-27 | 株式会社 日立ディスプレイズ | 平面表示装置の製造装置 |
| KR100623689B1 (ko) * | 2004-06-23 | 2006-09-19 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
| JP5152827B2 (ja) | 2007-03-22 | 2013-02-27 | 株式会社日立製作所 | 薄膜トランジスタ及びそれを用いた有機ｅｌ表示装置 |
| JP5648252B2 (ja) * | 2010-08-27 | 2015-01-07 | 学校法人東北学院 | 半導体装置 |
| KR101983157B1 (ko) * | 2013-11-19 | 2019-05-28 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| EP3131943A4 (en) | 2014-03-12 | 2018-02-14 | Hexion Research Belgium SA | Polymers, composites, and methods for making polymers and composites |
| CA3031736A1 (en) | 2015-07-29 | 2017-02-02 | Circuit Seed, Llc | Complementary current field-effect transistor devices and amplifiers |
| WO2017019973A1 (en) | 2015-07-30 | 2017-02-02 | Circuit Seed, Llc | Multi-stage and feed forward compensated complementary current field effect transistor amplifiers |
| WO2017019981A1 (en) | 2015-07-30 | 2017-02-02 | Circuit Seed, Llc | Reference generator and current source transistor based on complementary current field-effect transistor devices |
| WO2017019978A1 (en) | 2015-07-30 | 2017-02-02 | Circuit Seed, Llc | Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices |
| CA3043989A1 (en) | 2015-12-14 | 2017-06-22 | Circuit Seed, Llc | Super-saturation current field effect transistor and trans-impedance mos device |
| CN107359203A (zh) | 2017-05-12 | 2017-11-17 | 惠科股份有限公司 | 显示面板和显示装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940010378A (ko) * | 1992-10-19 | 1994-05-26 | 김광호 | 다결정 실리콘 박막의 제조방법 |
| JP2791858B2 (ja) | 1993-06-25 | 1998-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JPH0823160A (ja) * | 1994-05-06 | 1996-01-23 | Seiko Epson Corp | プリント配線板と電子部品の接続方法 |
| JPH07321323A (ja) * | 1994-05-24 | 1995-12-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP3294439B2 (ja) | 1994-08-17 | 2002-06-24 | 沖電気工業株式会社 | 多結晶シリコン薄膜の形成方法 |
| JP4026191B2 (ja) | 1996-05-22 | 2007-12-26 | ソニー株式会社 | シリコン単結晶粒子群の形成方法及びフラッシュメモリセルの製造方法 |
| JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
| TW454260B (en) * | 1998-06-30 | 2001-09-11 | Matsushita Electric Industrial Co Ltd | Thin film transistor and manufacturing method thereof |
| JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2000243854A (ja) * | 1999-02-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6426245B1 (en) * | 1999-07-09 | 2002-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
-
2001
- 2001-02-01 JP JP2001025531A patent/JP4358998B2/ja not_active Expired - Fee Related
- 2001-02-21 TW TW090103950A patent/TW478171B/zh not_active IP Right Cessation
- 2001-02-23 US US09/790,545 patent/US6521909B2/en not_active Expired - Lifetime
- 2001-02-26 KR KR1020010009646A patent/KR100761619B1/ko not_active Expired - Fee Related
-
2002
- 2002-10-22 US US10/274,995 patent/US6690064B2/en not_active Expired - Lifetime
- 2002-10-22 US US10/277,140 patent/US6716726B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442958B2 (en) | 2002-05-17 | 2008-10-28 | Hitachi, Ltd. | Thin film semiconductor device |
| US7939826B2 (en) | 2002-05-17 | 2011-05-10 | Hitachi Displays, Ltd. | Thin film semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20020102823A1 (en) | 2002-08-01 |
| US20030054593A1 (en) | 2003-03-20 |
| US6690064B2 (en) | 2004-02-10 |
| JP2002231958A (ja) | 2002-08-16 |
| KR100761619B1 (ko) | 2007-09-27 |
| US20030049892A1 (en) | 2003-03-13 |
| KR20020064620A (ko) | 2002-08-09 |
| JP4358998B2 (ja) | 2009-11-04 |
| US6716726B2 (en) | 2004-04-06 |
| US6521909B2 (en) | 2003-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |