JP4358998B2 - 薄膜トランジスタ装置およびその製造方法 - Google Patents

薄膜トランジスタ装置およびその製造方法 Download PDF

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Publication number
JP4358998B2
JP4358998B2 JP2001025531A JP2001025531A JP4358998B2 JP 4358998 B2 JP4358998 B2 JP 4358998B2 JP 2001025531 A JP2001025531 A JP 2001025531A JP 2001025531 A JP2001025531 A JP 2001025531A JP 4358998 B2 JP4358998 B2 JP 4358998B2
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Japan
Prior art keywords
thin film
polycrystalline
composition ratio
transistor
crystal
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Expired - Fee Related
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JP2001025531A
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English (en)
Japanese (ja)
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JP2002231958A5 (enExample
JP2002231958A (ja
Inventor
伸也 山口
健夫 芝
睦子 波多野
成基 朴
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001025531A priority Critical patent/JP4358998B2/ja
Priority to TW090103950A priority patent/TW478171B/zh
Priority to US09/790,545 priority patent/US6521909B2/en
Priority to KR1020010009646A priority patent/KR100761619B1/ko
Publication of JP2002231958A publication Critical patent/JP2002231958A/ja
Priority to US10/277,140 priority patent/US6716726B2/en
Priority to US10/274,995 priority patent/US6690064B2/en
Publication of JP2002231958A5 publication Critical patent/JP2002231958A5/ja
Application granted granted Critical
Publication of JP4358998B2 publication Critical patent/JP4358998B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2001025531A 2001-02-01 2001-02-01 薄膜トランジスタ装置およびその製造方法 Expired - Fee Related JP4358998B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001025531A JP4358998B2 (ja) 2001-02-01 2001-02-01 薄膜トランジスタ装置およびその製造方法
TW090103950A TW478171B (en) 2001-02-01 2001-02-21 Thin film semiconductor device and method for producing thereof
US09/790,545 US6521909B2 (en) 2001-02-01 2001-02-23 Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof
KR1020010009646A KR100761619B1 (ko) 2001-02-01 2001-02-26 박막 반도체 장치 및 그 제조 방법
US10/277,140 US6716726B2 (en) 2001-02-01 2002-10-22 Thin film semiconductor device containing polycrystalline Si—Ge alloy and method for producing thereof
US10/274,995 US6690064B2 (en) 2001-02-01 2002-10-22 Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001025531A JP4358998B2 (ja) 2001-02-01 2001-02-01 薄膜トランジスタ装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2002231958A JP2002231958A (ja) 2002-08-16
JP2002231958A5 JP2002231958A5 (enExample) 2006-03-30
JP4358998B2 true JP4358998B2 (ja) 2009-11-04

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JP2001025531A Expired - Fee Related JP4358998B2 (ja) 2001-02-01 2001-02-01 薄膜トランジスタ装置およびその製造方法

Country Status (4)

Country Link
US (3) US6521909B2 (enExample)
JP (1) JP4358998B2 (enExample)
KR (1) KR100761619B1 (enExample)
TW (1) TW478171B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP3559962B2 (ja) * 2000-09-04 2004-09-02 日本航空電子工業株式会社 熱電変換材料及びその製造方法
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
KR100975523B1 (ko) * 2003-12-30 2010-08-13 삼성전자주식회사 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ
JP4567984B2 (ja) 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置
KR100623689B1 (ko) * 2004-06-23 2006-09-19 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5152827B2 (ja) 2007-03-22 2013-02-27 株式会社日立製作所 薄膜トランジスタ及びそれを用いた有機ｅｌ表示装置
JP5648252B2 (ja) * 2010-08-27 2015-01-07 学校法人東北学院 半導体装置
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
EP3131943A4 (en) 2014-03-12 2018-02-14 Hexion Research Belgium SA Polymers, composites, and methods for making polymers and composites
US10211781B2 (en) 2015-07-29 2019-02-19 Circuit Seed, Llc Complementary current field-effect transistor devices and amplifiers
WO2017019978A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
WO2017019981A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Reference generator and current source transistor based on complementary current field-effect transistor devices
WO2017019973A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Multi-stage and feed forward compensated complementary current field effect transistor amplifiers
CN111816610A (zh) 2015-12-14 2020-10-23 电路种子有限责任公司 场效应晶体管
CN107359203A (zh) * 2017-05-12 2017-11-17 惠科股份有限公司 显示面板和显示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010378A (ko) * 1992-10-19 1994-05-26 김광호 다결정 실리콘 박막의 제조방법
JP2791858B2 (ja) 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH0823160A (ja) * 1994-05-06 1996-01-23 Seiko Epson Corp プリント配線板と電子部品の接続方法
JPH07321323A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP3294439B2 (ja) 1994-08-17 2002-06-24 沖電気工業株式会社 多結晶シリコン薄膜の形成方法
JP4026191B2 (ja) 1996-05-22 2007-12-26 ソニー株式会社 シリコン単結晶粒子群の形成方法及びフラッシュメモリセルの製造方法
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
KR20010052812A (ko) * 1998-06-30 2001-06-25 모리시타 요이찌 박막 트랜지스터 및 그 제조방법
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6426245B1 (en) * 1999-07-09 2002-07-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
TW478171B (en) 2002-03-01
US20030054593A1 (en) 2003-03-20
US20020102823A1 (en) 2002-08-01
US6521909B2 (en) 2003-02-18
JP2002231958A (ja) 2002-08-16
US6690064B2 (en) 2004-02-10
KR100761619B1 (ko) 2007-09-27
KR20020064620A (ko) 2002-08-09
US20030049892A1 (en) 2003-03-13
US6716726B2 (en) 2004-04-06

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