KR100761619B1 - 박막 반도체 장치 및 그 제조 방법 - Google Patents

박막 반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR100761619B1
KR100761619B1 KR1020010009646A KR20010009646A KR100761619B1 KR 100761619 B1 KR100761619 B1 KR 100761619B1 KR 1020010009646 A KR1020010009646 A KR 1020010009646A KR 20010009646 A KR20010009646 A KR 20010009646A KR 100761619 B1 KR100761619 B1 KR 100761619B1
Authority
KR
South Korea
Prior art keywords
thin film
polycrystalline
transistor
composition ratio
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010009646A
Other languages
English (en)
Korean (ko)
Other versions
KR20020064620A (ko
Inventor
야마구찌신야
시바다께오
하따노무쯔꼬
박성기
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20020064620A publication Critical patent/KR20020064620A/ko
Application granted granted Critical
Publication of KR100761619B1 publication Critical patent/KR100761619B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1020010009646A 2001-02-01 2001-02-26 박막 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100761619B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001025531A JP4358998B2 (ja) 2001-02-01 2001-02-01 薄膜トランジスタ装置およびその製造方法
JP2001-025531 2001-02-01

Publications (2)

Publication Number Publication Date
KR20020064620A KR20020064620A (ko) 2002-08-09
KR100761619B1 true KR100761619B1 (ko) 2007-09-27

Family

ID=18890502

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010009646A Expired - Fee Related KR100761619B1 (ko) 2001-02-01 2001-02-26 박막 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (3) US6521909B2 (enExample)
JP (1) JP4358998B2 (enExample)
KR (1) KR100761619B1 (enExample)
TW (1) TW478171B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3737914B2 (ja) * 1999-09-02 2006-01-25 松下電器産業株式会社 半導体装置及びその製造方法
US6882012B2 (en) * 2000-02-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP3559962B2 (ja) * 2000-09-04 2004-09-02 日本航空電子工業株式会社 熱電変換材料及びその製造方法
US6746942B2 (en) * 2000-09-05 2004-06-08 Sony Corporation Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
JP3904512B2 (ja) * 2002-12-24 2007-04-11 シャープ株式会社 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器
JP2004207616A (ja) * 2002-12-26 2004-07-22 Hitachi Displays Ltd 表示装置
KR100975523B1 (ko) * 2003-12-30 2010-08-13 삼성전자주식회사 조절된 이동도를 가지는 반도체 소자 및 이를 적용한 ｔｆｔ
JP4567984B2 (ja) 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置
KR100623689B1 (ko) * 2004-06-23 2006-09-19 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5152827B2 (ja) 2007-03-22 2013-02-27 株式会社日立製作所 薄膜トランジスタ及びそれを用いた有機ｅｌ表示装置
JP5648252B2 (ja) * 2010-08-27 2015-01-07 学校法人東北学院 半導体装置
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
EP3131943A4 (en) 2014-03-12 2018-02-14 Hexion Research Belgium SA Polymers, composites, and methods for making polymers and composites
US10211781B2 (en) 2015-07-29 2019-02-19 Circuit Seed, Llc Complementary current field-effect transistor devices and amplifiers
WO2017019978A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
WO2017019981A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Reference generator and current source transistor based on complementary current field-effect transistor devices
WO2017019973A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Multi-stage and feed forward compensated complementary current field effect transistor amplifiers
CN111816610A (zh) 2015-12-14 2020-10-23 电路种子有限责任公司 场效应晶体管
CN107359203A (zh) * 2017-05-12 2017-11-17 惠科股份有限公司 显示面板和显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010378A (ko) * 1992-10-19 1994-05-26 김광호 다결정 실리콘 박막의 제조방법
KR19990023628A (ko) * 1997-08-12 1999-03-25 오카모토 세이시 다결정 반도체박막의 제조방법 및 제조장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2791858B2 (ja) 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH0823160A (ja) * 1994-05-06 1996-01-23 Seiko Epson Corp プリント配線板と電子部品の接続方法
JPH07321323A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法
JP3294439B2 (ja) 1994-08-17 2002-06-24 沖電気工業株式会社 多結晶シリコン薄膜の形成方法
JP4026191B2 (ja) 1996-05-22 2007-12-26 ソニー株式会社 シリコン単結晶粒子群の形成方法及びフラッシュメモリセルの製造方法
KR20010052812A (ko) * 1998-06-30 2001-06-25 모리시타 요이찌 박막 트랜지스터 및 그 제조방법
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
US6426245B1 (en) * 1999-07-09 2002-07-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010378A (ko) * 1992-10-19 1994-05-26 김광호 다결정 실리콘 박막의 제조방법
KR19990023628A (ko) * 1997-08-12 1999-03-25 오카모토 세이시 다결정 반도체박막의 제조방법 및 제조장치

Also Published As

Publication number Publication date
TW478171B (en) 2002-03-01
US20030054593A1 (en) 2003-03-20
US20020102823A1 (en) 2002-08-01
US6521909B2 (en) 2003-02-18
JP2002231958A (ja) 2002-08-16
US6690064B2 (en) 2004-02-10
KR20020064620A (ko) 2002-08-09
US20030049892A1 (en) 2003-03-13
JP4358998B2 (ja) 2009-11-04
US6716726B2 (en) 2004-04-06

Similar Documents

Publication Publication Date Title
KR100761619B1 (ko) 박막 반도체 장치 및 그 제조 방법
US7939826B2 (en) Thin film semiconductor device
KR100704331B1 (ko) 박막 트랜지스터 장치
US6903368B2 (en) Thin-film transistor device, its manufacturing process, and image display using the device
US20080122773A1 (en) Driving circuit of a semiconductor display device and the semiconductor display device
US6452213B1 (en) Semiconductor device having first, second and third non-crystalline films sequentially formed on insulating base with second film having thermal conductivity not lower than that of first film and not higher than that of third film, and method of manufacturing the same
TWI266371B (en) Thin-film semiconductor device, manufacturing method of the same and image display apparatus
US7109075B2 (en) Method for fabrication of polycrystallin silicon thin film transistors
US7189665B2 (en) Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device
US7662678B2 (en) Method of forming a more highly-oriented silicon layer and substrate having the same
US20050142817A1 (en) Surface planarization method of sequential lateral solidification crystallized poly-silicon thin film
JP2000183357A (ja) 薄膜トランジスタ及びその製造方法
KR101095368B1 (ko) 다결정 박막 형성방법
JP2006032646A (ja) 結晶性薄膜形成方法、結晶性薄膜、結晶性薄膜半導体装置およびディスプレイ装置
KR20050043223A (ko) 다결정 실리콘 박막의 형성방법
JP2005347580A (ja) 結晶性薄膜形成方法、結晶性薄膜、結晶性薄膜半導体装置およびディスプレイ装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120821

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130819

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140826

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150820

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160919

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160919

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000