TW420864B - Nonvolatile semiconductor memory device having a program area - Google Patents

Nonvolatile semiconductor memory device having a program area Download PDF

Info

Publication number
TW420864B
TW420864B TW088102406A TW88102406A TW420864B TW 420864 B TW420864 B TW 420864B TW 088102406 A TW088102406 A TW 088102406A TW 88102406 A TW88102406 A TW 88102406A TW 420864 B TW420864 B TW 420864B
Authority
TW
Taiwan
Prior art keywords
line
gate
transistor
voltage
unit
Prior art date
Application number
TW088102406A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroyuki Kobatake
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of TW420864B publication Critical patent/TW420864B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW088102406A 1998-02-18 1999-02-12 Nonvolatile semiconductor memory device having a program area TW420864B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3530298A JP3332152B2 (ja) 1998-02-18 1998-02-18 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
TW420864B true TW420864B (en) 2001-02-01

Family

ID=12437995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088102406A TW420864B (en) 1998-02-18 1999-02-12 Nonvolatile semiconductor memory device having a program area

Country Status (6)

Country Link
US (1) US5966328A (de)
EP (1) EP0938098A3 (de)
JP (1) JP3332152B2 (de)
KR (1) KR100313206B1 (de)
CN (1) CN1228600A (de)
TW (1) TW420864B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100232200B1 (ko) * 1997-05-26 1999-12-01 김영환 비휘발성 메모리 소자 및 제조 방법
TW449746B (en) * 1998-10-23 2001-08-11 Kaitech Engineering Inc Semiconductor memory device and method of making same
US6501684B1 (en) * 1999-09-24 2002-12-31 Azalea Microelectronics Corporation Integrated circuit having an EEPROM and flash EPROM
US6285615B1 (en) * 2000-06-09 2001-09-04 Sandisk Corporation Multiple output current mirror with improved accuracy
US6962851B2 (en) 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6962852B2 (en) 2003-03-19 2005-11-08 Promos Technologies Inc. Nonvolatile memories and methods of fabrication
US6995060B2 (en) 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6893921B2 (en) 2003-04-10 2005-05-17 Mosel Vitelic, Inc. Nonvolatile memories with a floating gate having an upward protrusion
US7214585B2 (en) 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6974739B2 (en) 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
US6902974B2 (en) 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US6846712B2 (en) 2003-05-16 2005-01-25 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates
US7169667B2 (en) 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US6951782B2 (en) 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
US7060565B2 (en) 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US6885044B2 (en) * 2003-07-30 2005-04-26 Promos Technologies, Inc. Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
US7052947B2 (en) 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7101757B2 (en) 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
CN1328794C (zh) * 2003-08-29 2007-07-25 中芯国际集成电路制造(上海)有限公司 一种电可擦除可编程只读存储器的制造方法
US7148104B2 (en) 2004-03-10 2006-12-12 Promos Technologies Inc. Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
US7238575B2 (en) 2004-03-10 2007-07-03 Promos Technologies, Inc. Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
CN100446125C (zh) * 2006-08-24 2008-12-24 华为技术有限公司 非易失性高速存储单元
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7916551B2 (en) * 2007-11-06 2011-03-29 Macronix International Co., Ltd. Method of programming cell in memory and memory apparatus utilizing the method
CN101471136B (zh) * 2007-12-26 2012-07-11 上海华虹集成电路有限责任公司 一种防止eeprom编程串扰的电路和方法
US8134871B2 (en) * 2009-08-05 2012-03-13 Sandisk Technologies Inc. Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage
JP5668905B2 (ja) * 2009-09-07 2015-02-12 セイコーＮｐｃ株式会社 不揮発性半導体メモリ
JP6132283B2 (ja) * 2013-05-17 2017-05-24 Ｎｌｔテクノロジー株式会社 増幅回路および増幅回路を用いたイメージセンサ
FR3021803B1 (fr) * 2014-05-28 2017-10-13 Stmicroelectronics Rousset Cellules memoire jumelles accessibles individuellement en lecture
KR200485989Y1 (ko) 2015-12-18 2018-03-21 대상 주식회사 지속적인 밀봉과 배출량 조절이 가능한 식품용기
JP2021093230A (ja) * 2019-12-10 2021-06-17 キオクシア株式会社 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245566A (en) * 1987-04-24 1993-09-14 Fujio Masuoka Programmable semiconductor
US5331590A (en) * 1991-10-15 1994-07-19 Lattice Semiconductor Corporation Single poly EE cell with separate read/write paths and reduced product term coupling
US5138576A (en) * 1991-11-06 1992-08-11 Altera Corporation Method and apparatus for erasing an array of electrically erasable EPROM cells
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
US5666309A (en) * 1995-11-17 1997-09-09 Advanced Micro Devices, Inc. Memory cell for a programmable logic device (PLD) avoiding pumping programming voltage above an NMOS threshold
TW449746B (en) * 1998-10-23 2001-08-11 Kaitech Engineering Inc Semiconductor memory device and method of making same

Also Published As

Publication number Publication date
JP3332152B2 (ja) 2002-10-07
EP0938098A3 (de) 2000-10-04
KR100313206B1 (ko) 2001-11-05
KR19990072743A (ko) 1999-09-27
JPH11232890A (ja) 1999-08-27
CN1228600A (zh) 1999-09-15
EP0938098A2 (de) 1999-08-25
US5966328A (en) 1999-10-12

Similar Documents

Publication Publication Date Title
TW420864B (en) Nonvolatile semiconductor memory device having a program area
KR930004173B1 (ko) Nand형 메모리셀블럭을 갖춘 불휘발성 반도체기억장치
TWI269303B (en) Semiconductor device having a byte-erasable EEPROM memory
US4903236A (en) Nonvolatile semiconductor memory device and a writing method therefor
US7158413B2 (en) Semiconductor memory device with MOS transistors, each including a floating gate and a control gate, a control method thereof, and a memory card including the same
US5412596A (en) Semiconductor storage device with a ferroelectric transistor storage cell
JPH0936264A (ja) 半導体装置および不揮発性半導体メモリ
TW415070B (en) Non-volatile semiconductor memory device
JP2728679B2 (ja) 不揮発性半導体メモリ装置
JP5101085B2 (ja) 不揮発性メモリ素子
TW455872B (en) Method for fabricating electrically selectable and alterable memory cells
JP2732601B2 (ja) 不揮発性半導体メモリ装置
JP2004103161A (ja) 不揮発性半導体メモリ
JP2008270814A (ja) 不揮発性メモリ素子及びその動作方法
KR100295794B1 (ko) 대용량및고속소거에적합한반도체메모리장치
US6760254B2 (en) Semiconductor memory device
JP2000353391A (ja) 不揮発性半導体記憶装置の消去方式
TWI796162B (zh) 半導體儲存裝置
JP2003036682A (ja) 不揮発性半導体記憶装置
JP2011192346A (ja) 半導体メモリ
JP4034594B2 (ja) 不揮発性半導体メモリ
WO2001033633A1 (en) Semiconductor memory and method of driving semiconductor memory
JPH10144807A (ja) 不揮発性半導体記憶装置
KR950004865B1 (ko) Nand셀구조를 갖는 불휘발성 반도체기억장치
JP2011216169A (ja) 半導体メモリ

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent