TW398048B - Gold alloy wire for wedge bonding and use thereof in wedge bonding - Google Patents

Gold alloy wire for wedge bonding and use thereof in wedge bonding Download PDF

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Publication number
TW398048B
TW398048B TW086110773A TW86110773A TW398048B TW 398048 B TW398048 B TW 398048B TW 086110773 A TW086110773 A TW 086110773A TW 86110773 A TW86110773 A TW 86110773A TW 398048 B TW398048 B TW 398048B
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Taiwan
Prior art keywords
alloy wire
gold alloy
gold
electrode
weight
Prior art date
Application number
TW086110773A
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English (en)
Inventor
Teruo Kikuchi
Mitsuyoshi Ishii
Original Assignee
Tanaka Electronics Ind
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Publication of TW398048B publication Critical patent/TW398048B/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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Description

A7 B7 五、發明説明（1 ) 本發明係有關用於楔連結之金合金絲以及該金合金 絲在模連結上的使用。 絲連結方法用來將1C晶片的電極，經由線絲，連接到 外接點等係習知的。在絲連結方法中，可依其將一絲線 連結至1C晶片的電極的方式來歸類，包含有超音波和熱 壓連結；以及超音波連結。典型的超音波和熱壓連結係 釘頭連結方法。釘頭連結方法係示於第1A至1D圖中。 參見第1A圖，線絲2係被置入毛細管1中，焊接炬3面 向線絲的頭端，而在焊接炬3和線絲2之間產生放電，而 熱熔線絲2的頭端俾形成一球狀體4。 參見第1B圖，毛細管1被下移，而球狀體4被壓到1C 晶片6的銘電極5上。此時，超音波被經由毛細管1施加到 球狀體4上，而1C晶片6被加熱塊加熱，而使球狀體4被熱 壓而連結到電極5上而成為被連結球狀體4'。 參見第1C圖，毛細管1被經由某一途徑（線絲2')移往 外引線8之上，然後被下移至外引線8。此時，超音波被 透過毛細管1而施加到線絲2上，而外引線8被加熱塊加熱 ，而使線絲的側部被熱壓而連結到外引線8上。 經濟部中央標準局員工消費合作社印製 參見第1D圖，當線絲2被夾住時，夾具7被提起，使 線絲2被切斷，而完成絲連結。 另一方面，典型的超音波連結方法係使用楔結合具的 楔結合方法。 參見第2A圖，線絲12係被置穿楔結合具11的下端， 而1C晶片16的鋁電極15被移至楔結合具11之下方。 4 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） 經濟部中央標準局員工消費合作社印製 A7 --______ B7 五'發明説明（2) 參見第2B圖，其後，楔結合具u被降低，而在室溫 下，即，不加熱，經由楔結合具丨丨，施加超音波至受壓 線絲12 ,來將線絲12連結到IC晶片16的鋁電極15。 參見第2C圖，夾具17釋放線絲，而楔結合具u經由 某一路徑（線絲12’)移向外引線18上方，接著，下移至外引 線18。此時，超音波再度在室溫下，經由楔結合具η而 .被施加到線絲12，而將線絲12連結到外引線18。 參見第2D圖，當線絲12被夾住時，夾具17被提起， 使線絲12被切斷，而完成絲連結。 上述釘頭連結方法，由於產量非常高，故為人所喜用 。惟因，它涉及加熱，故常和金合金絲一起使用。它是 不適於使用鋁合金絲的場合，因當它被加熱時，鋁合金 很容易氧化。 此一外’如第3Α圖所示，球狀體4，具有一比線絲2,的直 徑D大三至四倍的餘L_，此使其紐適用於細線絲配置 〇 由於楔結合可在室溫下進行，故雖然其產能不高，惟 ，在使用鋁合金絲時，會使用楔結合。不過，楔結合有 如下的優點，即，如第3B圖所示，變形線絲14，的寬度£— 可為僅係線絲12,直徑的1·5至2.5倍而已。 — 惟’金合金絲在半導體裝置中，作為提供对腐钱方面 的可靠性之佈線材料上，料人所優先考慮材料，此係 因，金合金在抗腐银性方面，t匕#它絲線材料優良得多 本紙張尺度朝中國國家標準（CNS ) A4規格（210x297公fy I ❿裝—丨 (請先閱讀背面之注意事項再填寫本頁)
、tT (請先閱讀背面之注意事項再填寫本頁)
6 A7 B7 五、發明説明（4 ) 絲，其包括1至1 OOppm重量的#5 (Ca)，餘量為金(Au)，該 金合金絲具有不小於33.0 kg/mm2和1至3%的拉伸。 在較佳的實例中，提供有下述兩實施例。 (1) 第一實施例是模結合用的金合金絲，包括1至 lOOppm重量的#5(Ca)，餘量為金(Au)，該金合金絲線有一 至少99.9%重量的金純度，該金合金絲具有不小於 33.01<^/1111112和1至3°/。的拉伸。 此金合金絲可更包括至少一選自于由鎂（Mg)，紀〇〇 ，鋼(La)，鎖（Eu)，錯(Ge)，銀(Ag)和銘（Pt)所組成的族中 之其量為1至lOOppm重量的元素，和/或其量為1至20ppm 重量的鈹(Be)。 (2) 第二實施例是楔結合用的金合金絲，包括1至 lOOppm重量的妈（Ca)，和0.2至5.0%重量之至少一選自于 由I巴（Pd)，銀(Ag)和翻（Pt)所組成的族中之元素，餘量為 金（Au)，和不可避免的雜質，該金合金絲具有不小於 33.0kg/mm2和1至3%的拉伸。 經濟部中央標準局員工消費合作社印製 此金合金絲可更包括至少一選自于由鎂（Mg)，釔（Y) ，鑭（La)，銪（Eu)，鍺（Ge)和鈹(Be)所組成的族中之其量 為1至lOOppm重量的元素。 本發明的金合金絲係被用於楔結合’因此，依本發明 的另一面，亦提供有一上述金合金絲在楔結合中的使用 〇 楔結合可包括以下的步驟： 將金合金絲的一端，利用模結名—具，覆結合至半導 7 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） Μ Μ
經濟部中央椁準局t貝工消費合作社印製
、發明説明（ 體晶片的電極，和利用一炉 麗結合至-引結合具將金合金絲的另一端 : 或另—電極；更特定地，該步驟可包括 入將一部份的金合金絲置於—換結合具下，利用 °具’將該金合金絲的該部份 /… 上，俾將該金合金絲的該部份結二::的-:: == 該楔結合具，使其經由在該半導 另：= 之上方的一位置，而朝向-在-引線或 :電而形成—從該電極至該引線或另 ，極之呈某-形狀的金合金絲，該金合金絲的另一部 於該模結合具之下方，以及利用該楔結合具，將 :金，金絲的該另—部份壓到該引線或另—電極，俾將 ο金合金絲的該另-部份結合到該引線或另—電極上。 因此，亦提供一半導體裳置，其中，半導體晶片的電 玉和外引線或其它電極，係經由結合到該電極的金絲， 而連接’且藉由楔結合而連接到外5丨線或其它電極。 圖示的簡單說明： 第1A至1D圖是說明釘頭結合的一典型過程，· 第2A至2D圖是說明楔結合的一典型過程；以及 第3A至3®圖是顯示線絲的結合部份的寬度和結合方 法之間的關係。 口 ,依据本發明，一預X量益，展延 性減少，而張力增加 '且’線絲的金純度被維持在不少 於99.9%(第一實施例），或再將pd，八§和丹的至少其—的預 本紙張尺度( CNS ) A4規格 ,衣II派------ (請先閱讀背面之注意事項再填寫本夏) 經濟部中央揉準局員工消費合作社印製 A7 _______________B7 五、發明説明（r ) 6 定量.加入（第二實施例）。 t ’胃溫度結合強度係，被預定量的^和 某一金純度或預定量的至少—pd，A^pt的上述組成，以 及上述機械性質的協同效果所改善。 纟本發明巾所使㈣起始高純度金較好應為純化到具 有至^ 99.99/(^1的純度，更佳的是至少重量， 最佳的是至少99.999%重量。 ^右以的含里係少於iPPm重量時，與Ca不少於11^1：1重 里的If /兄相較’其兩溫結合強度是較低。^Ca含量係高 過100 ppm重量時，1C晶片可能會有破裂，而為防止此破 裂’可能進行不充分的結合，而使高溫結合強度再度降 低。因此，Ca的含量在預定的延展性和張力強度下，與 預定金純度或預定量的Pd，Ag*pt的至少其一在—塊，應 在1至1〇〇PPm重量的範目，最好在1至50PPm重量的範圍‘。、、 在本發明的第—實施例中，一預定量的Ca和金純度 被維持在一定的水準，拉伸度減少，而張力增加。 在此實施例中，高溫結合強度係，被拉伸度和張力強 度之設定至預定範圍，以及加入預定量的Ca和維持預定 金純度的線絲等的協同效果所改良。 當然在第一實施例中，金合金線絲具有由預定量的C ’餘量是只有金和無法避免的雜質所組成的一組成是了 能的。 在此，當譬如是1至2%重量的Cu，在預定量的以被 加入，而預定拉伸度和張力強度被構建時，被加到線絲、 (請先閲讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製 ΑΊ _Β7_ 五、發明説明（7 ) 時’南溫度結合強度被減低，而若欲給—^纟士人強产日夺 ，在與線絲結合的晶片中會出現破裂。為；：：二 ，線絲的金純度被設成不少於99.9%。當鈇 ^ a w “、、’較好是不小 於 99.97% ，更佳的是，不小於99.979%。 此可很容易地藉使用高純度金起始物和添加物來達成 。使用的添加物可具有不小於99.999%重量的純度，較佳 的是，不小於99.999%重量。因此，線絲的總雜質濃度可 被降至少於0.1%，較佳是不少於0.03%，更佳是不少於 0.〇21%，最佳是不少於〇.〇〇5〇/0。 惟，只要線絲的金純度在當預定量的Ca被加入，而 線絲具有預定拉伸度和張力強度時，被維持在不少於 99.9%，縱使進一步加入異於Ca的添加物，本發明，特別 是其第一實施例的上述效果，仍可獲得。 特別疋，當除1至100 ppm重量的Ca之外，jy[g γ，La，Eu, Ge，Ag和Pt之至少其一係以丨至丨卿脾重量，以及/或^ 係以1至20ppm重量被添加入時，高溫結合強度會被進一 步改善。· ^Mg，Y，La, Eu，Ge，Ag和Pt之至少其一的預定量被 加入，惟未加入預定量的<^時，縱使金的預定純度被維 持，而預定延長性和張力強度被建立，高溫結合強度會 降低。 在本發明的第二實施例中，預定量的Ca和預定量的pd, Ag和Pt的至少其一被加到高純度金，拉伸度減少而張力 本纸張尺度適财_家標系7CNS) A4規格（210x29T^y (請先閲讀背面之注意事項再填寫本頁)
10 經濟部中央標準局員工消費合作社印製 A 7 B7 五、發明説明（8 ) 強度增加。 在此實施例中，高溫結合強度係，被拉伸度和張力強 度之設定至預定範圍，以及加入預定量的Ca和預定量的pd， Ag和Pt的至少其一等的協同效果所改良。 若Pd，Ag和Pt的至少其一的含量係少於02%重量時， 與Pd，Ag和Pt的至少其一不少於0.2%重量的情況相較，其 局溫結合強度是較低。若Pd，Ag和Pt的至少其一含量係高 過5.0%重量時’ 1C晶片可能會有破裂，而為防止此破裂 可能進行不充分的結合，而使高溫結合強度再度降低 。因此，Pd，Ag和Pt的至少其一的含量在預定的拉伸度和 張力強度下’應在0.2至5_0%重置的範圍，最好在1.〇至3 〇% 重量的範圍。 若Pd，Ag和Pt之至少其一的預定量被加入，惟未加入 預定量的Ca時，縱使預定延長性和張力強度被建立，高 溫結合強度會降低。 當然在第二實施例中，金合金線絲具有由預定量的(^ 和預定量的Pd, Ag和Pt的至少其一，餘量是只有金和無法 避免的雜質所組成的一組成是可能的。 惟，只要線絲的金純度在當預定量的Ca，和預定量 的Pd，Ag和Pt的至少其一被加入，而線絲具有預定拉伸度 和張力強度時，當Mg，Y，La，Eu，Ge，和Be之至少其一係 以1至lOOppm重量，進一步被添加入時上述效果仍可獲得 ’甚而被進一步改善。 此時，在第二實施例中，最好是，線絲的總雜質濃度 本纸張尺度適用中國國家標準（CNS ) A4规格（21 〇 X 297公釐） (請先閎讀背面之注意事項再填寫本頁) -訂 A7 B7 經濟部中央榡準局薦工消費合作，社印製 五、發明説明（ 除以Pd，Ag和Pt的至少其一取代0.2至5.0%重量的金外， 其餘以與第一實施例相同的方式控制。線絲的總雜質濃 度係藉由起始物純度（不少於99.99%，更佳的是，不少於 99.999%)的控制，而使其較佳地少於1 〇〇ppm，更佳的是 少於20ppm。 在包含第一和第二實施例的本發明中，高溫結合強度 係’被拉伸度和張力強度之設定至預定範圍，以及加入 預定量的Ca和維持預定的金純度，或進一步加入預定量 的Pd，Ag和Pt的至少其—等的協同效果所改良。 若拉伸度大於3%時，則縱使加入預定量的Ca和維持 預定的金純度，或進一步加入預定量的Pd，Ag和Pt的至少 其一，且張力強度設定至預定範圍，高溫度結合強度會 被降低。若拉伸度少於1%時，則所欲求的高溫結合強度 的改良無法達成。因此拉伸度係設定在1至3%的範圍，而 以2至3%的範圍為較佳。 拉伸度％係使用張力測試裝置在室溫下測定，其中， 金合金線絲在間距為1 〇〇瓜^^處被夾住，並以丨〇 率拉伸。在破裂時的延展量（長度)被測定，而拉伸度(〇/0) 由下式來計算： 加伸疮〜）—j裂時的延展量乂 1〇〇 100 (mm) 延展量（長度）最好是使甩上述測計中所得之拉伸度對 施加負載的曲線來測定。 右1張力強度係少於33.0Kg/mm2時，則縱使加入預定 ~~~------ 210X297公釐） (請先閲讀背面之注意事項再緣寫本頁j -訂· 12 A7 -------B7 _ 五、發明説明（10 ) 量的Ca和維持預定的金純度，或進一步加入預定量的pd， Ag和Pt的至少其一，且拉伸度設定至預定範圍，其高溫 度結合強度與不少於33.0Kg/mm2的情況相較，仍是會較 低。因此，張力強度被設定成不小於33·〇 Kg/mm2，較佳 是在33_0至70.0Kg/mm2之間，更佳是在33.0至63 〇Kg/mm2 之間，最佳是在39.1至6；3.0Kg/mm2之間。 以下是描述製備本發明金合線絲方法。 高純度金被加入預定量的一元素，且在一真空爐内被 熔融，並鑄造而得一錠塊。使用一有槽輥軋和線絲拉伸 機以及中間退火，對該旋塊施以冷處理，而獲得一生線 絲；其後進行最後冷處理以獲得直徑為1〇至1〇〇 的細 線絲；然後作最後的退火。 在本發明的合金組成物的情況中，有一溫度區，在該 區中’ ¥隶後退火的溫度提面時，張力強度會，在拉伸 度在1至3%範圍内維持恆定時，逐漸地降低。且，線絲的 張力強度會依最後冷處理的程度而變化。因此，拉伸度 和張力強度可藉由最後冷處理的程度，以及最後退火溫 度的控制來調整。 因此，最後退火係在拉伸度保持在1至3%，以及張力 強度作成不少於33.0 Kg/mm2’而最好是33.0至70.0 Kg/mm2 時的溫度範圍内進行。若退火的溫度再提高，拉伸度變 成高於3%而張力強度下降。 被使用作釘頭結合的金合金線絲具有4%或更多的延 展性。相對比地’在本發明中，為得到預定張力強度和1 (請先閲讀背面之注意事項再填寫本頁) _裝-----|、玎---- 經濟部中央標準局舅工消費合作社印製 本紙張尺/又適用中國國家標準（CNS ) A4規格（21〇χ29<7公慶） A 7 B7 五、發明説明（11 ) 至3%的拉伸度，最後冷處理的程度被調整，而最後退火 溫度亦在考慮合金組成下，被降低。 為何高溫結合強度，在當本發明的金合金線絲被楔結 合至1C晶片的電極時，為如此優越，尚未弄清楚。惟， 据認，加入Ca，調節雜質含量或加入Pd，Ag和Pt的至少其 一，以及在以超音波進行楔結合時，由於小的拉伸度和 大的張力強度而防止材料的不必要的變形等，I所形成 的Au-Al互結金屬化合物呈熱安定性。 本發明的金合金線絲係適合作楔結合。楔結合係意指 ，在1C晶片的鋁電極和一外引線或另一電極間的結合佈 線，其中，線絲的結合至電極，以及結合至一引線或另 一電極係，利用不會在第一和第二結合間形成一球狀體 之楔結合具，而藉由將線絲的側段壓結合到外引線或另 一電極來進行。另外，亦可透過楔結合具而將超音波施 加到線絲的結合部份。 範例 (實施例1) 經濟部中央標準局員工消費合作社印製 在具有純度為99.999%重量的金中，加入預定量的Ca ，而混合物被置於真空爐中熔融，以鑄造一具有第1表内 所示的組成的金鍵塊，亦即，99.988%重量或更高的金純 度以及lppm重量的Ca。使用一有槽棍軋和線絲拉伸機以 及其後的中間退火，對該旋塊施以冷處理，而獲得一直 徑為25/zm的線絲。然後施以最後的退火，以獲得具有張 力強度為40.8 Kg/mm2和拉伸度為2至3%的金合金線絲。 14 (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（C'NS ) A4規格（210X 297公釐） A7 B7 五、發明説明（12 ) 使用楔結合裝置（Shikawa SWB-FA-US30)，此金合金 線絲被結合至1C晶片的鋁電極上，並利用第2A至2D圖所 示的方法，施以超音波而結合至外引線上。在1C晶片面 上結合的條件是，45g的結合負載，3 0 ms的結合時間以及 0.64W的結合力。 如此所得的十個樣品被置於2000C的爐内100小時。 將樣品從爐内取出而線絲在其外線側被切斷，以決定1C 晶片邊的尚溫結合強度。即5 1C晶片被--·失具所固定7 而線絲被舉提，而破裂點的負載被測定。示於第1表中的 高溫結合強度值是所測十個樣品數值的平均數。 (範例2至71和比較例1至11) 重複實施例1，但金和金合金線絲的組成，拉伸度和 張力強度如表1至4所示改變。為所得線絲測計的高溫結 合強度被示於表1至5中。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 15 Μ Β7五、發明説明（13 ) 經濟部中央標準局員工消費合作社印製 {Ό P I-* H* J~* ο β 〇〇 ·-〇 〇\ Η Η* Ι-* Η1 Μ Ln UJ Μ Μ 4^. *— 〇 vO CO '«J cr\ Ln ui f\J 1—* 4ert (¾^ h-· Μ Η1 Μ Η* Ο Ο Ο Ο Ο Η* Η* Ο ΜΗ· 〇 Ο Η* Ο Ο Η Μ Ο Η-1 Η-* Ο Ο Η* Ο Ο Η» Η-* Ο Ln Η1 Ο Ο Ο Ο Η* η fu 1 1 t 1 1 1 1 1 1 1 Η* i Ln Ln Ο Ui Ο Ο Ο Ο lilt Η-* ci? ΓΤ Τ5 Τ3 Β 1 1 1 t > Μ t L〇 Ln Ο Ln Ο Ο Ο Ο 1 1 1 1 Μ 1 1 1 1 1 -< Μ 1 1 1 Ο LA ο ο 1 1 1 1 Η1 1 1 1 1 1 1 1 1 ' ι ι Η* Ο (_Λ 1 ， OOP 1 i 1 1 1 1 1 t 1 1 1 1 1 1 1 m P 1 < 1 I 1 ( 1 1 1 1 1 1 t i 1 1 1 1 1 1 a (V (till 1 1 1 » 1 1 1 1 1 1 1 1 i 1 1 1(111 1 > 1 I t 1 1 1 < 1 1 1 1 i 1 •-a 1 1 1 1 1 1 1 1 1 1 i 1 1 1 1 1 1 1 1 1 w m II ν ΙΙν “V ΙΙν ΙΙν ν〇 νΟ VO V〇 \D VO V£) 必 VD 必 ν〇 CO VO νο 00 VD CO L〇 "«J CO U> νΟ Hi/ ΙΙν ΙΙν "V ΙΙν ν〇 <〇»_〇 U5 必 νΌ ν〇 UD VO 必 νο <〇 ν〇 »〇 VO CO UD C0 «vj U> 00 L0 VO UD ΙΙν ΙΙν Ι*ν "V ΙΙν VO <〇 VO V〇 UD νο ν〇 ν〇 ν〇 U5 Ό \〇 CQ UD 00 Vj ^ OJ 00 u> VO ΙΙν ΙΙν ΙΙν ΙΙν ΙΙν ν〇 νο ^ V〇 V〇 V〇 VO UD VO UD ι〇 νο ΟΟ »JD UD UD vj ν£> 〇〇 00 v〇 \〇 > 7 Γ+ Μ ·〇 U) ·Ρ- U3 Ο Ο U3 Μ OD -sj 〇 Η» <>> U1 U) J> Ρ' U3 Ο Ο Ο Η-1 -g L/1 Η ΓΌ [NJ ΐ* OJ W L» 〇 |-> *»»J NJ CO LO J> L>J ί> L〇 4> O <X> I-* M3 O 4> L〇 t_n 〇0 Ϊ ^ 族 % W··- Μ Νί Μ Μ t 1 1 1 1 Ui l>> l>j LO u> (S3 t〇 Μ Μ Μ 1 1 1 1 1 〇J U> U> LO U) {S3 r〇 h〇 Γ〇 Ν> 1 1 1 1 1 U) l>> OJ C〇 Ui r〇 Μ (Ό (Ό r〇 1 1 i 1 t 〇J OJ U> W U) —x. ϊνί 奇 Ln 00 Ο 'vl -««J 1£> _ρ» j> 4> ·£> J> σ» Μ cn cj> _(> ·ί> £> ·ρ> J> Co 〇J υι Ln α\ p- 〇J 〇J L〇 U> •vj 〇 〇J 〇J fvj 3Κ 1¾ 一 αν? (請先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家榇準（CNS ) A4規格（210 X 29.7公釐） 16
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7. 7 B 4 11 /\ 明 説 明 發 五 鸹-3 6 鸹-3 7 ^-38 ls-3 9 PS s is±31 IS-3 2 1--3 3 I--3 ή s ^ is-K 難-27 潍-28 i£s29 離-3 0 $5-21SSS22 I--23 弊-24 換窆2 5 10 10 10 10 10 10 10 10 10 10 10 10 1° 10 10 10 10 10 10 10
Ca 2° 20 20 25 25 25 M00 2〇 20 20 25 25 25 25 20 25 25 25
La 25 25 25 25
Eu 20 25 25 25 s 100
Ge (wt ppm) I-------41— (請先閲讀背面之注意事項再填寫本頁) 25 25 25 25 50
Ag 20 25 25 25
Pt 訂 we l,v99 l,v99 l,v99 ,,v99 lvs l,v99 llv99 ,lv99 ^99 l,v99 l,v99 llv99 l,v99 l,v99 l,v9 9 llv99 llv99 l,v99 9S 993 992 S2 992 S3 993 9S S3 993 S3 9S 993 993
ss 23 9S llvs.9979
Au (wtz) 亡一 s s 41 39
39 39 41 s U 39 s 41 39 41 ^-1 2 ?5 s (k:00/—10) 經濟部中央標準局員工消費合作社印製 3 — 3 2-3 2丨3 2-3 2-3 2 2丨3 2-3 2 13 2-3 2 · 3 2 — 3 2-3 2 — 3 2 — 3 3 2-3 2丨3 2丨3 2-3 2 — 3 s (g) 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 17 A7 B7 五、發明説明（15) 經濟部中央標準局員工消費合作社印製 令令 命 令 CT» Ln Ln Cn Οι 〇 >£> 00 σ\ 窆宣窆宣2 Ln ui Lfl tn Ln ·Ρ* L>i [Ό l~* 潍淖舞淖§ 玄玄室宣：^ 〇 vo co cr' 窆Φ窆宣窆 4> ί> 〇l U> Ν) W ίτλ h~* H-* h·1 M 卜 ο ο ο ο ο 1—* h-· (—· H* l·-* 〇 O O O 〇 ^ ^ h-< Η* ο ο Ο Ο ο l〇 μ-· Μ i-* H o o o o o Ο tu η Ό Τ3 3 'β 1 1 1 1 I - ΰ ΰ ' 'g S 1 1 S S’ 1 1 'S ^ ' H* t-1 N3 M -〇 〇 Ui Ln 1 1 1 1 > S S S 1 -< 1 1 i 1 I s ε , 1 1 f 1 1 1 1 Ξ S S ' tr fu 1 i 1 1 1 S Ξ '' 1 1 1 1 1 W Η* Η* Μ M 〇 〇 〇 〇 〇 rd P g 1 ' 1 · Ξ Ξ ' ' S S - 1 · I-* h-» Η* NJ N> Ο Ο O Q O o 0) 1 1 1 1 1 1 1 1 1 < 1(111 S S ' s <& ] 1 1 t 1 1 1 1 1 1 i 1 1 1 1 £ ε ' s ' ID i 1 1 i 1 t-* Η* H* O h-· Ο Η* O h-· Η Η> Ο h·1 Ο Η* 11(11 03 ίΌ Hv Hv llv Hv tlv VO k£) VO νΛ VO vO UD UD VO UD <X) VO V〇 VO VD VO LO 〇J W CO CO llv llv llv Nv "v U3 v〇 v〇 v〇 v〇 Ό v〇 V〇 V£) VO v〇 v〇 v〇 v〇 VO 〇j U> h〇 M N> v〇 <〇 ιΐν Νν "ν Hv ιΐν VO νο VD ν〇 ν〇 ν〇 ν〇 νΟ >Χ> κ〇 . ν£> ^£> ν〇 \_〇 fO ΙΌ Γ〇 --4 '-J ν〇 llV IIV "V iiv "V vo <〇 vO Ό v〇 ιχ> VO ^ 〇0 v£) v〇 ¢- J-* -P" NJ NJ > P | 7 ft Μ ui CTi LO Ln LO LO O U> W [vj Η» Η» CO O j> U) 4> -P> 〇 v£> 卜* 〇 v〇 03 vj -P- 〇〇 ^ϊ« UJ ·Ρ"* LO Q Ι_ι \^) 〇 Κ〇 (\j Ln w 〇3 〇 U> O O O K* Ul 1>J 03 OJ ON 1 辭 象 It 游 r〇 N3 N) ho W 1 1 1 1 > u> L〇 U> ω LO N> r〇 Μ Μ ΓΌ lilt· UJ W L〇 UJ U> to {Ό fvj Γ〇 Ν3 ! 1 1 1 I LJ L0 U> U> U> 卜 fvj fO (Ό N 1 t 1 1 1 r〇 w u> uj u> L>J U> U) U> VO Cn Ό Ln (Ό Ln J> -i> J> O CO vO '•J Ln -Ρ· -Ρ* Ln ο ui »Χ) cn 4> Ln 4> CO σν O CO Ό 3aV Λ αϊ? 巴命 1 命 (請先閱讀背面之注意事項再填寫本頁)
本纸張尺度適用中國國家標準（CMS ) A4規格（210X 297公釐） 18 A7 B7 五、發明説明（16 經濟部中央操準局員工消費合作社印製 範例66 範例6 7 範例68 範例69 範例61 範例62 範例63 範例6 4 範例6 5 ! 範例號碼 . 1 Η* Η1 Η 〇 Ο Ο Ο Μ Μ Μ Η* Μ Ο Ο Ο Ο Ο (wt ppm) 1111 1 ι Μ Ν) ί <_λ Ln H* l·-1 1 1 Ο Ο 1 1 Μ Ν3 1 Ln Ln -< Η* Η1 t t Ο Ο 1 1 1 1 1 Pi Η» Μ Μ Γ〇 Ο Ο Ο Ο 1 1 1 1 i w P Η Η» Μ Ν> Ο Ο Ο Ο Ν5 1 1 U1 Οι Ln ο o CO 1111 Ν> Μ 1 1 1 LH Οι 念 1 1 Μ Μ Ο ο 1 ( ί < ( TJ 1 1 1 1 1 1 1 i 幽 ω CO > 99.992 > 99.992 > 99.994 - 1 > 99.994 ! 1 > 99.993 一 .> 99.993 ；> 99.993 '> 99.993 1 > 99.993 > P (wtl) Ln to σ\ ΙΟ LO 〇 00 Μ Γ〇 Ι-* σ> uj σν l〇 Ln 〇 O L〇 UD U-> U> Μ O CO 張力強度 (kg/mm2) 機械強度 [NJ Μ Μ Μ 1 1 1 1 U> L〇 to U) M to Μ Μ M (lilt L〇 W L0 U> tjJ 拉伸度 (:) LO (—* 00 CO 4> L〇 〇l Ό M3 00 H-* 馬溫結合強度. (g) '評估 ^4 (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家操準（CNS ) A4規格（210 X 297公釐） 19
A 經濟部中央襟準局員工消費合作社印製
(梦先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準〈CNS ) A4規格（2丨0X297公釐） 20 A7 B7 五、發明説明（18 ) (範例1至71和比較例1至11結果的考量） (1) 在範例1至4中，只有.1至lOOppm重量的Ca被加入 高純度的金，而所得金合金線絲具有高於99.9%重量的金 純度，2至3%的拉伸度和39.3至41.4 Kg/mm2的張力強度， 線絲的高溫度結合強度是在3.0至3.3克上，係優越的。 在它們之間，因線絲的高溫度結合強度是3.2至3.3 g ，故加入1至50ppm重量的Ca係較佳。 (2) 在範例5至55中，1至lOOppm重量的Ca以及1至 lOOppm重量的Mg, Y, La,Eu, Ge，和Be之至少其一被加入 高純度的金，而所得金合金線絲具有高於99.9%重量的金 純度，1至3%的拉伸度和3.9.3至41.6 Kg/mm2的張力強度， 線絲的高溫度結合強度是4.2至5.1克，此係比只有添加Ca 更為優越。 (3) 在範例56至71中，組成和拉伸度係與範例2, 11,22, 26, 36，42, 43和45相同，而其張力強度是33.0至60.0 Kg/mm2 ,線絲的高溫結合強度是優越地為3.2至5.1克。 (4) 在範例中，最優越的高溫結合強度是4.2至5.1克 ，獲得該強度的條件是，除了 Ca外，Mg, Y, La，Eu, Ge, Ag, 經濟部中央標準局員工消費合作社印製
Pt和Be之至少其一被加入，且線絲具有1至3%的延展性 ，而張力強度是39.1至63.0 Kg/mm2。 (5) 在比較例1 中，Ca和Mg，Y，La,Eu，Ge, Ag, Pt和Be 之至少其一均未被加入，線絲的高溫結合強度係低至0.6 克。 (6) 在比較例2至3中，不含Ca，而Mg和Y的含量是 21 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ 297公釐） 經濟部中央標準局員工消費合作社印製 A 7 B7 五、發明説明（19 ) 50ppm重量，線絲的高溫結合強度係低至2.5至2.7克。 (7) 在比較例4中，加入的Ca是10 ppm重量，而預定 的拉伸度和張力強度被建立，惟，Cu的含量為2.0%重量 ，線絲的高溫結合強度係低至0.5克。 (8) 在比較例5中，所含的Ca為200 ppm重量，而線 絲的高溫結合強度係低至1.2克。 (9) 在比較例6至8中，所含的是預定量的Ca或預定量 的Mg, Ge，或Ag，而線絲具有預定的金純度，但其延展 性係超過3%，線絲的高溫結合強度係低至2.2至2.4克。 (範例101) 重複實施例1，不同的是，加到具有99.999%純度的 起始高純度金中的，不只是1 ppm重量的Ca而已，同時亦 加有1.0%重量的Pd，在最後退火後所得的線絲具有39.8 Kg/mm2的張力強度和2至3%的拉伸度。所得金合金的組 成和機械性赁係列示於表6。 線絲的高溫結合強度係以如範例1中的相同方式來測 定，且示於表6。 (範例102至150和比較例101至126) 重複實施例101，但金和金合金線絲的組成，拉伸度 和張力強度如表5至9所示改變。為所得線絲測計的高溫 結合強度被示於表6至10中。 本紙張尺度適用中國國家標準（CNS ) A4規格（210.Χ 297公釐） (請先閱讀背面之注意事項再填寫本頁)
22 A7 B7 20 五、發明説明（ 經濟部t央標準局員工消費合作社印製 範例116 範例117 範例118 範例119 範例120 例 hi 範例112 範例113 範例114 範例115 範例106 範例107 範例108 範例109 範例110 fe^'J 101 範例102 範例103 範例104 範例105 Η-* 〇i Ln cn Cn Ο Ο Ο Ο Ο Ο Ca f-J U> o o p o o H-* CD Ln h-· Ln Ο Ο Ο Η* O Η* L〇 O U) Η* Ο Ο Ο Ο Μ 1 (wt ppm) 組成 1 1 1 1 I 1 1 1 t i i i i i i 1 1 1 1 1 1 1 1 1 1 1 1 1 ( i 1 1 1 1 1 1 1 1 1 1 κ 1 t 1 1 t 1 1 1 1 1 1 1 1 1 1 t 1 1 1 1 £ (till i i i i i i 1 i 1 1 1 < 1 1 1 c 1 1 1 1 1 i i < i i 1 1 i 1 Λι 1 1 1 I 1 Q 0) 1 1 1 1 i i i i i i 1 1 1 1 1 1 1 1 1 1 D〇 Η* Μ ο ο t 1 1 1 1 Ol lilt· o Ο Η* Ρ Η Η1 Γ〇 ο ο ο ο T3 .〇- (wtz) Η1 <•111 ο Ln O III·· Ο N3 Η· Η Μ H* o o o o 1 1 1 1 i Κ* «_η ο Ι-* * 1 ♦ · · Ο Ο Μ ο Μ Η* H-* 0 0.0 1 i 1 1 > 1 > 1 1 1 »-d n € 0.002 ' < 0.002 < 0.002 < ο.οοζ < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < o.ooz < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 雜質 弈璩弈#弈 _ 响 1餘量 餘量 餘量！ 餘量 餘量 弈漆#漆弈 liajai 1φ 1Φ Mq W 餘量 餘量 餘量 餘量 餘量 > LO LO (Ο C3 <0 Ο Ό σ% co ν〇 ι_ο ho -p' h2 Ο · O \D Μ l〇 r〇 ^ κ* ca 〇 〇 〇 VO H-* O H CO Ln U> u> 0 0<£>0<0 ro -«g η r〇 〇〇 張力強度 (kg/mm2) 機械強度 Ν> r〇 Ni NJ Ni I 1 1 1 i CO L>J U> OJ [Ό r〇 tO to Ν> ( 1 i 1 I LO LJ L*J U> U) NJ Μ N) N3 N3 1 1 1 1 t C>> l>) LO U) Ν3 Ν3 r〇 Μ Μ 1 1 1 1 1 OJ 〇J OJ OJ LO 拉伸度 u) 4> 4Ϊ* 4> U» v〇 hJ σ\ u* cn Ln J> -i> Ο Ο 0> Ln LO 〇 ·ί> ·Ρ» ·Ρ* σ> co Ln -P· LO -P- -p-cn Ln co «_π t>J 南溫結合強度 (g) i 評估 (請先閲讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（21〇Χ 297公釐） 23 kl B7 21 五、發明説明 經濟部中央標準局員工消費合作社印裝 範例13 6 1 範例137 範例138 範例13 9 範例140 祀例131 範例13 2 範例133 範例13 4 範例13 5 範例126 範例127 範例128 範例129 範例130 祀例m 範例122 範例123 範例124 範例125 範例 號碼 Ln Ln Ln Ui Ln Ο Ο Ο Ο Ο Ln Ln Ui Ln Cn Ο Ο Ο Ο O Ln Ln Ui U) Ln o o o o 〇 Ui U! Ln Ln Ln o o o o 〇 Μ Ν3 Ν> Η-1 1 ι_η Ln ο l N3 1 1 » La H-* 1 1 l 1 〇 〇 Ln ι ι ι OP 苕 » Η* Η* U1 U1 Ο Ο 1 [S3 丨丨 1 Ul H* l O Ln 1 O O (- 1 i | l 1 K (wt ppm) '''ε ε 1 1 1 1 t a ' till! tr ρ ' s ε 11(11 t 1 | 1 1 gl ' ' ε ξ K ' ' S ' 1 1 1 t .) 1 1 1 | 1 1 o 0) 'ι ' ε ι 'S'' 1 1 1 1 1 t 1 1 1 1 CO (Ό ί-1 t-> • II·· ο ο ο H* K* l·-* (-* H·* o o o o o Μ 1-* H* H* (-· O 〇 O 0.0 Η* I-1 J-* h-· o o o 〇 rU η i-l £ Η* Κ* • 1 « 1 ( ο ο 1 1 1 t 1 1 t ( 1 t Ill·· o 〇 Η* 1 · 1 1 1 ο 1 < 1 i 1 1 t 1 1 1 lit·· o o *〇 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 | < 0.002 1 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 S： 餘量 餘量 餘量 餘量 餘量 餘量 l餘量 餘量i 餘量 餘量 瘅漆弈漆弈 ΐ4ϋ 吨 _ w® 餘量i 餘量 餘量 餘量 餘量 > c U> 〇J U) Ο ^£1 J—* Ό VD 4> cn M r〇 -Ο -ί> -Ρ-Ο Η* Ο Ο Η* Η-* Ν) Ln -C» UJ 〇J 4> Ο Μ O -«J Ln Ο Η·> Ln U> ·ί> 〇J ·ί> W υ3 〇 〇 v〇 〇〇 r〇 cd ro 〇〇 張力強度 (kg/rnm2) 機械強度 N) h〇 r〇 NJ 1 1 1 1 i U> U) U> UJ u> ΓΌ [Ό ι〇 r〇 i 1 1 1 > U) u> U3 t>) u> N> r〇 (sj {\J fO 1 1 1 i 1 U> 〇J LO LO U> N> t\J N) CO NJ 1 1 1 1 1 LO L>> OJ 拉伸度 (Z) 4> Ln CO VO Ln Ln -i> 〇 v〇 Ον O CD L〇 L/i Ο H* CO >X> P- -P· 4> «-Λ 4> VO CO K* N3 M y-S -.Κ» QQ 盼 一 Q卜 命 >7 (請先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準（CNS ) A4規格（2!0X297公釐） 24
A
7 B \―/ 22 /....\ 明 説 明 發 五 IS!?_UP6 11^15 ||宣 148 II,宣 149 ls!?_j 150 |£宝 141 難±142 11,^143 1¾皇 144 ιΞ!ί_Μρ5 S $ 50 50 5〇 50 5°
Ca 50 s 50 5〇 5〇 30 50 50 25 25
Mg 30 1〇
La 10
Eu (wt ppm) 10
Ge 1°
Be 1·〇 1.0
1.0 l.〇 l.〇 i.O
Pd I·裝——(讀先閱讀背面之注意事項再填寫本頁) :0 1,〇 ··0 1,0 1·° 1.( 1.0 ιιλ0·0°2 ,,Α0 ΙΙΛ0 ,ΙΛ° ΙΙΛ0 ΙΙΛ0 ΙΙΛ0 ΙΙΛ0 ΙΙΛ0 ΙΙΛ0 ,ΙΛ0 〇02 0〇2 002 002 0°2 002 002 002 0〇2 0〇2 s (wtz) $ #:¾ #i 璩* 漆wa #t #* $ #i 漆i
Au 訂---- 39-- 59 33 59 33 6〇 33 60 33 s'0,0' 41·1 經濟部中央榇準局員工消費合作社印製 :7 2 — 3 2-3 2-3 2-3 2-3 c' 3 .03 f° 3*9 f 3 2丨3 2*3 2丨3 2-3 2丨3 ΓΜ 3,3 4 · 4 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） (kg/mm- 钵每鰣 U) (g) 30|3-命逾^~ 25 經濟部中央襟準局員工消費合作社印製 A7 __^_B7 五、發明説明（23 ) Μ Μ Μ Μ Μ Μ Μ Η-* Μ Μ Οι -Ρ- W Ν) Η* 比較例 106 比較例10 7 比較例108 比較例 109 比較例 110 比較例1011 比較例10 2 比較例103 比較例10 4 比較例105 1 比較例號碼」 1 Ln Ln L〇 Ln Ln Ο Ο Ο Ο Ο 50 200* 200* 200* 200* 111)1 if 5(· 冲 冷 冷 ο P (wt ppm) I * g ''' g ,,,, g ' ' 1 . 0.11* ! 0.11* β.Ο * Μ Μ Ο 丨 _ Ο 1 Η* Μ • .« · O f 1 Ο ί 'A- CL (wtl) ο 1 1 1 Η» I Η1 > Μ t 1 Ο 1 J Ι-* 1 1 Ο 1 1 Ο 1 ί Μ ί < Η 冷 Μ t o I » ί Η» 1 〇 1 J J r*f 1 幽 1 1 1 1 ' ' 1 ο α- 幽 1 1 1 1 Ο p < 0.002 < ο.οοζ ι < 0.002 1 < 0.002 < 0.002 .< 0.002 < 0.002 1 — < ο.οοζ < 0.002 < 0.002 < 0.002 < 0.002 ,< 0.002 < 0.002 < 0.002 邀 w 餘量： 餘量 餘量 餘量 餘量 餘量 餘量 餘量 餘量 餘量 餘量 1 餘量 餘量 餘量 餘量 > f> ·Ρ- LO Ο O VD Ο ν£> Μ L〇 4> 4> Ln 〇 〇 VD 〇〇 〇\ LP O CX) C\ LO ·ρ- ·Ρ- Μ ο ν£> ο o cr\ VD 'xj U> μ (Ν〇 張力強度 (kg/mm2) 機械強度 ! {ν3 Μ Ν> Ν> tO 1 1 1 1 1 U> L〇 L〇 LO U> r〇 Μ Μ Μ Μ 1 1 1 1 1 W L〇 U> W W Μ Μ Μ Μ Μ 1 1 t 1 1 U) L〇 〇J U3 L〇 拉伸度 U) h-» t〇 L〇 LO OJ CTN U-) Ν3 LO Η Η* Μ 〇 Μ ^ Ο Ln ro ro r〇 r〇 ο CO Ln C» CT. 向温結合強度 i (g) 1 (請先閲讀背面之注意事項再填寫本頁) 訂 本纸張尺度適用中國國家標準.（CNS ) A4規格（210X 297公釐） 26 AT B7 五、發明説明（24 經濟部中央標準局員工消費合作社印製 比較例 1211 比較例 1ΖΖ 比較例 123 比較例 124 比較例 I25 比較例 I26 比較例II6 比較例 117 比較例 118 比較例 119 比較例.120 比較例號碼 U1 On Ln Ln U) 〇〇〇〇〇〇 Ln L/i Ln L/i Ln 〇 Ο Ο Ο Ο Ο Ρ (wt ppm) 組成 g ' ' 1 S ' 1 1 g 1 1 苕 h-> Η M • ii·· i 〇 o o Η σ\ 1 . »· · 1 I Ό Ο α (wtZ) M 1 i III o 1—» (J\ . III· Ο ο Hr Η* H 1 * · 丨 丨· ° o σ\ lit·! ο a- >-〇 1 1 1 1 1 1 1 i i \ 1 ο c < 0.002 < 0.002 < 0.002 ^ 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 < 0.002 ,< 0.002 丨 ·* 逆 w 餘量 餘量 餘量 餘量 餘量 餘量 餘量· 餘量 餘量： 餘量 餘量 1_ > c _ρ- LO Ο Ο ν〇 Ο Ο Ο CO 4> C0 θ' Η to 〇J ^ 4> ν〇 ο Ο Ο 〇 V〇 U> (_Π OA Μ >(· 5{· 張力強度 (kg/mm2) 機械強度 Μ Μ -f> , 丨 ^ X· 冷 L〇 Μ Γ\3 Μ Μ Μ 1 1 1 1 I LO t〇 LO U> LO 拉伸度 U) [«〇 Μ M N3 Γ° ·4> 〇 Η» L〇 «4D σν Μ Ν) Μ Μ Μ σ» CX) Ν) -£> -Ο 南溫結合強度 (g) 評估 ίο (請先閲讀背面之注意事項再填寫本頁). 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 27 B7 五、發明説明（25 ) (範例101至15〇和比較例101至126結果的考量） (1) 在範例101至123中，1至lOOppm重量的Ca和0.2至 5.0%重量的Pd, Ag和Pt之至少其一被加入高純度的金，而 所得金合金線絲具有2至3%的拉伸度和39.1至41.5 Kg/mm2 的張力強度，線絲的高溫度結合強度是為3.5至5.1克，係 優越的。 在它們之間，因線絲的高溫度結合強度是4.1至5.1 g ，故加入1至50pp'm重量的Ca係較佳。 (2) 在範例124至142中，除了預定量的Ca和Pd，Ag和 Pt之至少其一之外，1至lOOppm重量的Mg，Y, La,Eu, Ge， 和Be之至少其一被加入高純度的金，而所得金合金線絲 具有2至3%的拉伸度和39.2至41.5 Kg/mm2的張力強度，線 絲的高温度結合強度是4.3至5.1克，此係同樣優越。 (3) 在範例143至150中，組成和拉伸度係與範例 103，109，115,和125相同，而其張力強度是33.0至 00.0Kg/mm2 ,線絲的高溫結合強度是優越地為3.8至4.4克 〇 經濟部中央標準局員工消費合作社印製 (4) 在比較例101中，其係與比較例1相同，Ca和Pd,Ag, 和Pt之至少其一均未被加入，線絲的高溫結合強度係低 至0.6克。 (5) 在比較例102至103中，不含Ca，而Pd，Ag，和Pt之 至少其一的含量是預定量，線絲的高溫結合強度係低至2.5 至2.8克。 (6) 在比較例10.6中，加入的Ca是50 ppm重量s但不 28 (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) A4規格（210Χ297公釐） A7 A7 經濟部中央標準局員工消費合作社印製 B7 五、發明説明（26 ) 加入Pd,Ag，和Pt之至少其一，而改加入2.0%重量的Cu， 線絲的高溫結合強度係低至0.5克。 _(7)在比較例107至110中，含預定量之Pd,Ag,和Pt的 至少其一’，但所含的Ca為200 ppm重量，而線絲的高溫 結合強度係低至1.0至1.4克。 (8) 在比較例111至114中，含預定量Ca，但Pd，Ag,和Pt 的至少其一的含量為0.11%重量，而線絲的高溫結合強度 係低至3.2至3.3克。 (9) 在比較例115至118中，含預定量Ca，但Pd,Ag,和Pt 的至少其一的含量為6.0%重量，而線絲的高溫結合強度 係低至1.2至1.6克。 (10) 在比較例119至122中，所含的是預定量的Ca或 預定量的Pd, Ag,和Pt的至少其一，而線絲具有預定的拉 伸度，但張力強度係小於33·0 kg/mm2，線絲的高溫ΐ吉合 強度係低至2.6至2.9克。 (11) 在比較例123至126中，所含的是預定量的Ca或 預定量的Pd，Ag,和Pt的至少其一，而線絲具有預定的張 力強度，但其拉伸度超過3%，線絲的高溫結合強度係低 至2.0至2.4克。 本纸張尺度適用中國國家瘭準（CNS ) A4規格（210:< 297公釐） 29 (讀先閱讀背面之注意事項再填寫本頁)
A7 B7 五、發明説明（27 ) 元件標號對照 1 —毛細管 2.. .線絲 3.. .火焰 4.. .球狀體 5.. .鋁電極 6.. . 1C晶片 4’...被結合球狀體 8.. .外引線 7.. .夾具 11.. .楔結合具 12.. .線絲 12'...線絲 14'...變形絲 15.. .鋁電極 16·.. 1C 晶片 17.. .夾具 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 18.. .外引線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 30

Claims (1)

  1. A8B8C8D8
    n n n , 經濟部智慧財產局員工消費合作社印製
    本紙張尺度 第86110773號專利再審查案申請專利範圍修正本 修正曰期：89年3月 1. 一種用於楔連結之方法，其包括下列步驟： 提供一金合金絲，其包括l-l〇〇PPm重量的舞，餘 量為金’該金合金絲具有至少99 99重量％的金純度， 其中藉由控制該金合金絲的冷絲與退火程度而將該金 合金絲的張力強度調整至不少於33 〇 kg/mm2,且將該 金合金絲的室溫拉伸度調整至丨至^〆。； 利用一楔連結具將該金合金絲的一端嚴連結到一 半導體晶片的一電極；及 利用一楔連結具將該金合金絲的另一端壓連結到 一引線或另一電極。 2·如申請專利範圍第1項之方法，其包括下列步驟： 將該金合金絲的一部份安置於一模連結具的下 利用該楔連結具將該金合金絲的該部份壓到一半 導體晶片的一電極，俾將該金合金絲的該部份連結到 該電極； 令该楔連結具相對於該金合金絲移動，並穿過位 在該半導體晶片之該電極上方的一位置，而朝向一位 在引線或另一電極上方的位置，俾自該電極至該引 線或另一電極，形成呈某一形狀的金合金絲，該金合 金絲的另一部份係位在該楔形具下方；及 利用該楔連結具將該金合金絲的該另一部份麼到 297公釐）
    擧--------tr----1丨丨-------------------------- (請先閲讀贫面之注意事項再填窝本頁) 31
    A8B8C8D8
    n n n , 經濟部智慧財產局員工消費合作社印製
    本紙張尺度 第86110773號專利再審查案申請專利範圍修正本 修正曰期：89年3月 1. 一種用於楔連結之方法，其包括下列步驟： 提供一金合金絲，其包括l-l〇〇PPm重量的舞，餘 量為金’該金合金絲具有至少99 99重量％的金純度， 其中藉由控制該金合金絲的冷絲與退火程度而將該金 合金絲的張力強度調整至不少於33 〇 kg/mm2,且將該 金合金絲的室溫拉伸度調整至丨至^〆。； 利用一楔連結具將該金合金絲的一端嚴連結到一 半導體晶片的一電極；及 利用一楔連結具將該金合金絲的另一端壓連結到 一引線或另一電極。 2·如申請專利範圍第1項之方法，其包括下列步驟： 將該金合金絲的一部份安置於一模連結具的下 利用該楔連結具將該金合金絲的該部份壓到一半 導體晶片的一電極，俾將該金合金絲的該部份連結到 該電極； 令该楔連結具相對於該金合金絲移動，並穿過位 在該半導體晶片之該電極上方的一位置，而朝向一位 在引線或另一電極上方的位置，俾自該電極至該引 線或另一電極，形成呈某一形狀的金合金絲，該金合 金絲的另一部份係位在該楔形具下方；及 利用該楔連結具將該金合金絲的該另一部份麼到 297公釐）
    擧--------tr----1丨丨-------------------------- (請先閲讀贫面之注意事項再填窝本頁) 31 398048 ___ C8 -—---- D8 _ 六、申請專利範圍 該引線或另—電極，俾將該金合金絲的該另一部份連 結到該引線或另一電極。 3.如申請專利範圍第1項之方法，其中該電極為銘。 如申明專利範圍第2項之方法，其中在該迫壓步驟期間 ’係施以超音波。 申μ 範111第1項之方法，其中該金合金絲包括1_ 1〇^m重置的甸，餘量為金，該金合金絲具有至少99.9 重里/〇的金純度，該金合金絲具有不少於33 〇㈣腿2 的張力強度與1至3%的拉伸度。 6.如申请專利範圍第5項之方法，其中該金合金絲更包括 至少一選自於由鎂(Μ§)、釔(Y)、鑭(La)、銪(Eu)、鍺(Ge) 、銀(Ag)及鉑（Pt)所構成之缸群中，且量為丨至丨⑽卯瓜 重量的元素。 7·如申請專利範圍第5項之方法，其中該金合金絲更包括 量為1至20ppm重量的鈹(Be)。 8.如申請專利範圍第6項之方法，其中該金合金絲更包括 量為1至20ppm重量的鈹(Be)。 9_ 一種用於楔連結之方法，其包括下列步驟： 知:供一金合金絲，其包括l_l〇〇ppm重量的舞，及 0.2至5.0重量％之至少一選自於由鈀(pd)，銀(Ag)與鉑 (Pt)所構成之組群中的元素，餘量為金(Au)與不可避免 的雜質’該金合金絲具有至少99.99重量％的金純度， 其中藉由控制該金合金絲的冷絲與退火程度而將該金 合金絲的張力強度調整至不少於33.0 kg/mm2，且將該 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------— (請先閱讀背面之注意事項再填寫本頁) *SJ. --線· 經濟部智慧財產局員工消費合作社印製 32 398048 ___ C8 -—---- D8 _ 六、申請專利範圍 該引線或另—電極，俾將該金合金絲的該另一部份連 結到該引線或另一電極。 3.如申請專利範圍第1項之方法，其中該電極為銘。 如申明專利範圍第2項之方法，其中在該迫壓步驟期間 ’係施以超音波。 申μ 範111第1項之方法，其中該金合金絲包括1_ 1〇^m重置的甸，餘量為金，該金合金絲具有至少99.9 重里/〇的金純度，該金合金絲具有不少於33 〇㈣腿2 的張力強度與1至3%的拉伸度。 6.如申请專利範圍第5項之方法，其中該金合金絲更包括 至少一選自於由鎂(Μ§)、釔(Y)、鑭(La)、銪(Eu)、鍺(Ge) 、銀(Ag)及鉑（Pt)所構成之缸群中，且量為丨至丨⑽卯瓜 重量的元素。 7·如申請專利範圍第5項之方法，其中該金合金絲更包括 量為1至20ppm重量的鈹(Be)。 8.如申請專利範圍第6項之方法，其中該金合金絲更包括 量為1至20ppm重量的鈹(Be)。 9_ 一種用於楔連結之方法，其包括下列步驟： 知:供一金合金絲，其包括l_l〇〇ppm重量的舞，及 0.2至5.0重量％之至少一選自於由鈀(pd)，銀(Ag)與鉑 (Pt)所構成之組群中的元素，餘量為金(Au)與不可避免 的雜質’該金合金絲具有至少99.99重量％的金純度， 其中藉由控制該金合金絲的冷絲與退火程度而將該金 合金絲的張力強度調整至不少於33.0 kg/mm2，且將該 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------— (請先閱讀背面之注意事項再填寫本頁) *SJ. --線· 經濟部智慧財產局員工消費合作社印製 32 S98048 cs L)〇 六、申請專利範圍 金合金絲的室溫拉伸度調整至1至3% ; 利用一楔連結具將該金合金絲的一端壓連結到一 半導體晶片的'一電極；及 利用一楔連結具將該金合金絲的另一端壓連結到 一引線或另一電極。 10. 如申請專利範圍第9項之方法，其中該金合金絲更包括 至少一選自於由鎂（Mg)、釔(Y)、鑭(La)、銪（Eu)、鍺(Ge) 、銀(Ag)及顧（Pt)所構成之組群中，且量為1至lOOppm 重量的元素。 11. 如申請專利範圍第1項之方法，其中該壓連結步驟係在 室溫下進行。 -------------拳— I (請先閲讀背面之注意事項再填寫本頁) .線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 33 S98048 cs L)〇 六、申請專利範圍 金合金絲的室溫拉伸度調整至1至3% ; 利用一楔連結具將該金合金絲的一端壓連結到一 半導體晶片的'一電極；及 利用一楔連結具將該金合金絲的另一端壓連結到 一引線或另一電極。 10. 如申請專利範圍第9項之方法，其中該金合金絲更包括 至少一選自於由鎂（Mg)、釔(Y)、鑭(La)、銪（Eu)、鍺(Ge) 、銀(Ag)及顧（Pt)所構成之組群中，且量為1至lOOppm 重量的元素。 11. 如申請專利範圍第1項之方法，其中該壓連結步驟係在 室溫下進行。 -------------拳— I (請先閲讀背面之注意事項再填寫本頁) .線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 33
TW086110773A 1996-07-31 1997-07-29 Gold alloy wire for wedge bonding and use thereof in wedge bonding TW398048B (en)

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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3126926B2 (ja) * 1996-09-09 2001-01-22 新日本製鐵株式会社 半導体素子用金合金細線および半導体装置
ES2195300T3 (es) * 1998-12-14 2003-12-01 Metalor Technologies Int Aleacion de oro gris sin niquel.
JP3382918B2 (ja) * 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
JP3323185B2 (ja) * 2000-06-19 2002-09-09 田中電子工業株式会社 半導体素子接続用金線
US20030006267A1 (en) * 2001-06-14 2003-01-09 Chen Kim H. Room temperature gold wire bonding
US6500760B1 (en) 2001-08-02 2002-12-31 Sandia Corporation Gold-based electrical interconnections for microelectronic devices
KR100485032B1 (ko) * 2002-04-09 2005-04-22 김선호 천연안토시아닌 염료의 제조방법
JP2004257950A (ja) * 2003-02-27 2004-09-16 Denso Corp 半導体圧力センサ
US6858943B1 (en) 2003-03-25 2005-02-22 Sandia Corporation Release resistant electrical interconnections for MEMS devices
KR100618052B1 (ko) * 2003-04-14 2006-08-30 엠케이전자 주식회사 반도체 소자 본딩용 금 합금세선
CN100487883C (zh) * 2004-09-30 2009-05-13 田中电子工业株式会社 金合金焊线
CN100501956C (zh) * 2004-11-26 2009-06-17 田中电子工业株式会社 半导体组件用金焊接线
DE102006006728A1 (de) * 2006-02-13 2007-08-23 W.C. Heraeus Gmbh Bonddraht
JP4130843B1 (ja) * 2007-04-17 2008-08-06 田中電子工業株式会社 高信頼性金合金ボンディングワイヤ及び半導体装置
JP4134261B1 (ja) * 2007-10-24 2008-08-20 田中電子工業株式会社 ボールボンディング用金合金線
JP4195495B1 (ja) * 2007-11-06 2008-12-10 田中電子工業株式会社 ボールボンディング用金合金線
CN101971313B (zh) * 2008-01-30 2013-07-24 库力索法工业公司 导线环以及形成导线环的方法
US9440272B1 (en) 2011-02-07 2016-09-13 Southwire Company, Llc Method for producing aluminum rod and aluminum wire
CN103842529B (zh) * 2011-03-01 2016-08-24 田中电子工业株式会社 金（Au）合金键合线
US9351436B2 (en) * 2013-03-08 2016-05-24 Cochlear Limited Stud bump bonding in implantable medical devices
CN111485131B (zh) * 2020-04-17 2021-12-24 烟台招金励福贵金属股份有限公司 一种键合金丝及其制备方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747198A (en) * 1971-08-19 1973-07-24 Gen Electric Tailless wedge bonding of gold wire to palladium-silver cermets
JPS53105968A (en) * 1977-02-26 1978-09-14 Tanaka Electronics Ind Gold wire for bonding semiconductor
JPS53112060A (en) * 1977-03-11 1978-09-30 Tanaka Electronics Ind Gold wire for bonding semiconductor
JPS59181040A (ja) * 1983-03-30 1984-10-15 Toshiba Corp 半導体装置の製造方法
JPS61189652A (ja) * 1985-02-19 1986-08-23 Toshiba Corp 半導体装置
JP2536546B2 (ja) * 1987-09-21 1996-09-18 三菱マテリアル株式会社 経時的硬さ低下のない半導体装置のろう付け用Ａｕ合金リボン箔材
JP2621288B2 (ja) * 1988-02-02 1997-06-18 三菱マテリアル株式会社 半導体素子ボンディング用Ａｕ合金極細線
JPH02205641A (ja) * 1989-01-31 1990-08-15 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JPH0719788B2 (ja) * 1989-02-20 1995-03-06 タツタ電線株式会社 ボンディング用金合金細線
JPH0719787B2 (ja) * 1989-02-20 1995-03-06 タツタ電線株式会社 ボンディング用金合金細線
JPH0719789B2 (ja) * 1989-02-20 1995-03-06 タツタ電線株式会社 ボンディング用金合金細線
JP2773202B2 (ja) * 1989-03-24 1998-07-09 三菱マテリアル株式会社 半導体素子ボンディング用Ａｕ合金極細線
JP2782082B2 (ja) * 1989-03-31 1998-07-30 タツタ電線株式会社 ボンディング用金合金細線
JPH03130337A (ja) * 1989-10-16 1991-06-04 Tatsuta Electric Wire & Cable Co Ltd ボンディング用金合金細線
JP2779683B2 (ja) * 1990-03-13 1998-07-23 新日本製鐵株式会社 半導体素子用ボンディングワイヤ
US5298219A (en) * 1990-06-04 1994-03-29 Tanaka Denshi Kogyo Kabushiki Kaisha High purity gold bonding wire for semiconductor device
JP2852134B2 (ja) * 1991-02-20 1999-01-27 日本電気株式会社 バンプ形成方法
JP2689773B2 (ja) * 1991-07-02 1997-12-10 住友金属鉱山株式会社 ボンデイングワイヤー
JP2641000B2 (ja) * 1991-12-26 1997-08-13 新日本製鐵株式会社 ボンディング用金合金細線
JP3235198B2 (ja) * 1992-07-15 2001-12-04 住友金属鉱山株式会社 ボンディングワイヤ
JPH06108181A (ja) * 1992-09-29 1994-04-19 Tanaka Kikinzoku Kogyo Kk 電気接点材料
JP3185994B2 (ja) * 1992-09-30 2001-07-11 田中電子工業株式会社 半導体素子用ボンディング線
JP3204336B2 (ja) * 1992-09-30 2001-09-04 田中電子工業株式会社 半導体素子用ボンディング線
JPH06112259A (ja) * 1992-09-30 1994-04-22 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JPH06112251A (ja) * 1992-09-30 1994-04-22 Tanaka Denshi Kogyo Kk 半導体素子用ボンディング線
JP3074626B2 (ja) * 1992-09-30 2000-08-07 田中電子工業株式会社 半導体素子用Ｐｔ合金極細線
JP3090549B2 (ja) * 1992-09-30 2000-09-25 田中電子工業株式会社 半導体素子用ボンディング線
JP3204335B2 (ja) * 1992-09-30 2001-09-04 田中電子工業株式会社 半導体素子用Ｐｔ合金極細線
JP3064692B2 (ja) * 1992-09-30 2000-07-12 田中電子工業株式会社 半導体素子用ボンディング線
JP3090548B2 (ja) * 1992-09-30 2000-09-25 田中電子工業株式会社 半導体素子用ボンディング線
JPH06145842A (ja) * 1992-10-30 1994-05-27 Nippon Steel Corp ボンディング用金合金細線
TW284791B (zh) * 1993-03-31 1996-09-01 Daijita Densen Kk
US5658664A (en) * 1993-04-08 1997-08-19 Nippon Steel Corporation Thin gold-alloy wire for semiconductor device
JPH0745657A (ja) * 1993-07-28 1995-02-14 Sumitomo Metal Mining Co Ltd ウェッジボンディング用ワイヤ
JP3312348B2 (ja) * 1994-05-10 2002-08-05 田中電子工業株式会社 ボンディング用金合金線

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US5945065A (en) 1999-08-31
DE69708545D1 (de) 2002-01-10
MY119444A (en) 2005-05-31
EP0822264B1 (en) 2001-11-28
CN1172349A (zh) 1998-02-04
KR980011960A (ko) 1998-04-30
KR100294242B1 (ko) 2001-11-14
SG77142A1 (en) 2000-12-19
CN1154181C (zh) 2004-06-16
DE69708545T2 (de) 2002-05-23
EP0822264A1 (en) 1998-02-04

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