TW379254B - Gold alloy thin wire and gold alloy bump - Google Patents

Gold alloy thin wire and gold alloy bump Download PDF

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Publication number
TW379254B
TW379254B TW85103401A TW85103401A TW379254B TW 379254 B TW379254 B TW 379254B TW 85103401 A TW85103401 A TW 85103401A TW 85103401 A TW85103401 A TW 85103401A TW 379254 B TW379254 B TW 379254B
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Taiwan
Prior art keywords
gold alloy
ppm
group
bump
weight
Prior art date
Application number
TW85103401A
Other languages
Chinese (zh)
Inventor
Kohei Tatsumi
Tomohiro Uno
Original Assignee
Nippon Steel Corp
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Publication date
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Publication of TW379254B publication Critical patent/TW379254B/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
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  • Wire Bonding (AREA)

Abstract

To provide a gold alloy thin wire and a bump formed therefrom with a small neck length stable obtained upon the wire breakage after ball bonding a gold alloy thin wire contains 0.2 to 5000 ppm by weight of Si and the balance of gold and unavoidable impurities. The wire may further contain, other than Si, a total amount of 0.2 to 300 ppm by weight of at least one from the first group of Ca, Be, La, and CE; or a total amount of 1 to 500 ppm by weight of at least one from the second group of Y SC, SR, GA, GE, and In; or a total amount of 2 to 10000 ppm by weight of at least one from the third group of Cu, Pd, Pt, al, and MN.

Description

經濟部中央標準局—工消費合作社印製 A7 _B7__ 五、發明説明（1 ) 發明背景 1. 發明領域 本發明傜有關於一金合金突塊及用於金合金突塊之金 合金薄線，或一金屬突出物，以連接外桿至半導體設備上 之電極。 2. 相關技藝之描述 _傳統上，半導體設備上之外桿和電極大多以線焊焊接 ，然而*線焊無法成功處理近來I C晶片和薄膜設備之縮 小化，因此，無線焊接常取代之。 自動焊接方法（T A B )包含形成一銀箔電路於聚胺 樹脂磁帶上、藉稱為突塊之金屬突出物將T A B電路桿至 焊接至I C晶片之電極，一突塊大都為藉在LS I晶Μ之 電極上電鍍而成之一合金突塊，此鍍金突塊有必需在電鍍 前於電極上形成一障礙層、突塊形成方法複雜且提高生産 成本，及不易量産其上具突塊之晶片等問題。 稱為輕焊晶片方法之另一無線焊接方法以面下方法連 接L S I晶片至電路板上，故可在L S I區域進行連接以 便於高密度裝置，然而，此法中，大都藉突塊以進行電極 上之連接。 第1圖顯示一柱突塊方法，其中突塊由具良好線焊可 靠度之金合金薄線所形成，此方法包括如傳統線焊方法中 在穿過毛細管3 —孔之金合金薄線.之頂端上藉放電以形成 一球、藉由通過毛細管3施以超音波波助熱.壓法，以焊接 球至矽半導體晶κ 7上之鋁亀極塾6、及之彳费；ίι 一夾鉗 本紙珉尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---^---^-----rA------訂------^泉 i : 爲 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印製 A7 _B7 __五、發明説明（2 ) 2夾線1以於頸4折斷線1而提高毛細管3、而形成一具 所欲頸長度8及突塊高度9之突塊5。 由於柱突塊方法傺基於已確立之線焊方法’其優點在 於可以高速施行焊接，生産成本低，且可成功利用現存線 焊設備。 由於突塊高度對L S I晶片與焊接電路板之距離’以 及焊接強度有顯著之影響，對作為連接電極之突塊，具一 均勻高度是重要的，待別是當由線形成突塊時，必須要減 少突塊上之斷裂高度。 然而，如第2圖所示，用於線焊之傳統金合金薄線有 焊接球上可至300um以上之大的線斷裂長度或頸長度，且 不穩定變化之斷裂位置亦導致頸長度之不固定，此現象視 為，傳统線焊傜設計以提供近球之熱感區一增強強度*以 減少迴路連接時之可能損害且防止加工及使用中轉動所産 生之不連接。 發明簡介 本發明之目的在提供一金合金薄線及其上形成之在球 焊後線斷裂所穩定獲得之短頸長度突塊，如第2 ( b )圖 所示，其中，一改良金合金柱突塊具一短突塊高度9。 本發明者進行一研究以瞭解金合金薄線，該線之斷裂 部份或頸有一控制之小的長度，並發現藉施熱於球形成時 可減少頸長度且藉加入元件於金合金中控制縮小頸強度。 亦發現基質線強度需高於頸強度以減少突塊長度之變化， 且基質線強度須強至足夠提供線生産之必要被加工能力。 -5 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 ——^---^------装------訂------；泉 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 A7 ___ B7___五、發明説明（3 ) 為逹成本發明之上述目的，提供以下之金合金薄線： 一種由0. 2至500重量ppm之S i及及餘量為金與不可避 免不純物之金合金薄線； 一種由0.2至500重量ppm之Si及0.2至300總重量PPmig 自由Ca、Be、La及Ce等組成之組群之至少一元素，及餘量 為金與不可避免之不純物之金合金薄線； 一種由0.2至500重量ppm之Si及0.2至5000總重量PPm 選自由Y、Sc、Sr、Ga、Ge及In等組成之組群之至少一元 素，及餘量為金與不可避免之不純物之金合金薄線； 一種由0.2至500重量ppm之Si及0.2至500總重量ppm選 自由Cu、Pd、Pt、A1及Μη等組成之組群之至少一元素，及 餘量為金與不可避免之不純物之金合金薄線； 一種由0.2至500重量ppm之Si及0,2至300總重量ppm選 自由Ca、Be、La及Ce等組成之組群之至少一元素、1至500 重量ppm選自由Y、Sc、Sr、Ga、Ga及In等組成之組群之至 少一元素及餘量為金與不可避免之不純物之金合金薄線； 一種由0.2至5000重量ppm之Si及0.2至300總重量PPm 選自由Ca、Be、La及Ce等組成之組群之至少一元素、2至 1000重量PPm選自由Cu、Pd、Pt、A1及Μη等組成之組群之 至少一元素及餘量為金與不可避免之不純物之金合金薄線 ♦ i 一種由0.2至5000重量ppm之Si及1至50Q總重量ppm選 自由Y、Sc、Sr、Ga、Ge等組成之組群之至少一元素、2至 10〇σ重童ppm選自由Cu、Pd、Pt、A1及Μη等組成之組群之 (請先閱讀背面之注意事項再填寫本頁) -装 訂 泉 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） A7 _B7_ 五、發明説明（4 ) 至少一元素及餘量為金與不可避免之不純物之金合金薄線 :及 一種由0.2至5000重量ppm之Si及0.2至300總重量ppm 選自由Ca、Be、La及Ce等組成之組群之至少一元素、1至 500重量ppm選自由Y、Sc、Sr、Ga、Ge及In等組成之組群 之至少一元素、2至1000重量ppm選自由Cu、Pd、Pt、A1及 Μη等組成之組群之至少一元素及餘量為金與不可避免之不 純物之金合金薄線。 根據本發明，其亦提供下列一金合金突塊： 一種具縮減頸高度、由0.2至5000重量PPm之Si及餘量 為金與不可避免之不純物之金合金突塊； .一種具縮減頸高度、由0.2至5000重量ppm之S i _、0.2 至300總重量ppm選自由Ca、Be、La及Ce等組成之組群之至 少一元素及餘量為金與不可避免之不純物之金合金突塊； 一種具縮減頸高度、由0.2至5000重量ppm之Si、1至 500總重量ppm選自由Y、Sc、Sr、Ga、Ga及In等組成之組 群之至少一元素及餘量為金與不可避免之不純物之金合金 突塊； 經濟部中央標準局員工消費合作社印製 ——----„-----^衣 1 (請先閲讀背面之注意事項再填寫本頁) 一種具縮減頸高度、由0.2至5000重量ppm之Si、2至 10000總重量ppm選自由Cu、Pd、Pt、A1及Μη等組成之組群 之至少一元素及餘量為金與不可避免之不純物之金合金突 -塊； 一種具縮減頸高度、由0.2至5000重量Pi>m之Si、0.2 至300總重量ppm選自由Ca、Be、La及Ce等組成之組群之至 -7 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7_五、發明説明（5 ) 少一元素、1至500重量ppm選自由Y、Sc、Sr·、Ga、 Ge及 In等組成之組群之至少一元素及餘量為金與不可避免之不 純物之金合金突塊； 一種具縮減頸高度、由0.2至5000重量ppm之Si、0.2 至300總重量ppm選自由Ca、Be、La及Ce等組成之組群之至 少一元素、2至10000重量ppm選自由Cu、Pd、Pt、A1及Μη 等組成之組群之至少一元素及餘量為金與不可避免之不純 物之金合金突塊； 一種具縮減頸高度、由0. 2至5000重量ppra之Si、1至 500總重量ppm選自由Y、Sc、Sr、Ga、Ge及In等組成之組 群之至少一元素、2至10000重量ppm選自由Cu、Pd、Pt、 A1及Μη等組成之組群之至少一元素及餘量為金與不可避免 之不純物之金合金突塊； 一種具縮減頸高度、由0.2至5000重量ppm之Si、0.2 至300總重量ppm選自由Ca、Be、La及Ce等組成之組群之至 少一元素、1至500總重量ppm選自由Y、Sc、Sr、Ga、Ga及 In等組成之組群之至少一元素及2至10000重量ppm選自由 Cu、Pd、Pt、A 1及Μη等組成之組群之至少一元素及餘量為 金與不可避免之不純物之金合金突塊； 圖例之簡要說明 第1圖傜一剖面圖，其顯示一柱突塊形成方法； 第2 (a)及（b)圖傜一剖面圖，（a)顯示傳統之具長頸· 的柱突塊，而（b)顯示根據本發明之短頸柱突塊； 窠3 _偽一曲線ΊΙ，其顏示拃為跑球鹿離之幽ir的近 ----------_^------、訂------i. _ | ; I (請先閲讀背面之注意事項再填寫本頁) 本紙乐尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐〉 經濟部中央標隼局員工消費合作社印製 A7 B7 __五、發明説明（6 ) 頸部份之頸微硬度，其等為根據本發明之線A、B及C與傳 統線之比較。 較佳實施例之描述 根據本發明之金合金薄線及金合金突塊將特別描述如下。 由於球形成間之熱作用，再結晶發生於突塊頸部並較 於基質線減少突塊頸之強度，當形成突塊時，重要須控制 熱感區域中之線斷裂，當保持基質線之高強度時；其亦須 提供一減低之頸強度。 當存於金中之Si量在0.2至5000重量ppm時，頸強度明 顯減少，故亦易於減少斷裂長度，這是因為藉S i添加而産 生高溫強度之降低，此視為有關於金-S i条統是一共鎔混 合物条統。 Si含量須在0.2重量ppm以上來提供一實質效能以減少 高溫強度，但須不大於5000重量ppm以提供一良好周圚，並 避免當電極位置或電極間距離短時，焊接之困難。一方面 ，大於100重量ppm之S i含量具一優點，其可增加強度以便 於形成25nn!以下之薄線直徑，但另一方面，將導致立即迴 火可能有時將為必須而軟化所畫之線，以防止畫線晶圓明 顯耗損之問題。然而，因S i沉澱將導致增加基質線強度， Si含量須超過100重量ppm，如此以減少線高度之變化。 除頸.再結晶區域之強度外，再結晶區域之長度亦為控 制線斷裂長度之重要因素。 儘管，單純S i添加明顯減少頸強度，熱感區域可能導 -9 - 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） -----^----裝------訂------^ i : i (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標率局員工消費合作社印製 A7 B7五、發明説明（7 ) 致對應於線斷裂時之狀態而變化之線斷裂長度。 為穩定提供一短頸斷裂長度，除上述Si之外，合金中 包含總量0.2至300重量PPm違自由Ca、Be、La及Ce(以下稱 第1族元素）等組成之組群之至少一元素* Si之添加便於 熱感區之再結晶，而第1族元素之添加將壓縮熱感區端之 再結晶，並限制熱感區之範圍至球附近以便於球上之線斷 裂，如此，可減少突塊高度之變化。 即言之，第1族元素於熱感區域端將選擇性壓縮S i造 成熱感區域長晶，且不甘擾適於通常Si造成長晶之高溫球 附近之長晶•第3圖顯示熱感區域附近之線硬度，自第3 圖可知，較於傳統商業用線，本發明之加Si線A具一減少 頸強度，本發明之加S ί及第1族元素之線B當球附近為低硬 度時，其於具縮減硬度之再结晶區域具一縮減長度，此意 謂，S i及第1族之協同作用利於頸斷裂之發生。 第1族元素須以總量0.2至300重量ppm之量存在，當 第1族元素至多為總量0.2重量ppm時，實質上頸斷裂不太 可能，當第1族元素多於300總重量ppm時，球尖端附近産 生一收縮凹洞而降低球焊後之焊接能力。 為方便線於頸部之斷裂，相較於不為熱影響之基質線 部份；頸須具一減弱之強度，為此目的，增加基質線強度 傜有效地。選自由Y、Sc、Sr、Ga及Ge (以下稱為第2族元 素）所組成之組群中至少一元素之添加總量在1至500重量 PPra以提供作用便於突塊形成時之頸斷裂，第3圖亦顯·示 具有一加強基質線強度之添加S i及第2族元素的線C，並 (請先閲讀背面之注意事項再填寫本頁) -装· 、vs 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（δ ) 提供一基質線與頸間之加大強度差。一般線製造方法包含 一確保畫線筆直之加溫熱處理’當於高溫下進行此加溫 時，其可能減少僅含s i —種添加物之線的強度，第2族元 素之添加會增加基質線之強度而不改變高溫強度，以避免 頸部以外之線部份的斷裂’且亦提供具小於25um直徑之筆 直程度良好之線以為形成小球’易於製造容易加工之線。 第2族元素存在之總量需在1至500重量pPm間，當其 小於1重量P P m，不會明顯增加基質線之強度，當其量大於 500重量ρρπι時，球形狀會不穩定變化，使得難以生成相當 於所欲縮減電極距離之小球。 為在LSI晶片之A1電極上形成一突塊，金合金突塊需具 有良好之與鋁焊接能力，單單S i之添加無法改善其與A丨之 球焊接能力，擇自至少一種由Cu、Pd、Pt、Al、In及Μη所 組成之組群之一元素（以下稱第3族元素）之總添加量在2 至10000重量PPm間，可增加金合金球及Μ基板之間之焊接 強度。為改善與A 1電極之焊接能力，當焊接球時，必須使 表面Μ氧化物薄膜破裂，較大球硬度將便於氣化物薄膜之 破裂。然而，必須注意的是，過大之硬度會産生問題，因 為當焊接時，超音波之應用會使消去球之A 1膜而不必減少 焊接強度或損壞晶片。另亦發現，當形成相當於縮減電極 距離之小突塊，藉較強球硬度可保持較佳之焊接能力。 當存在第3族元素之總量小於2重量ppm，不會明顯增 加焊接強度，當總量大於10000重量ppm，通常會發生由於 球硬度之大量增加而降低焊接能力，或者産生缺陷球型。 . -11 - 本紙張尺度適用中國國家標準（CMS〉A4規格（210X297公釐） ----------1^------1T------戒 . - : < (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（9 ) 用以輔肋S i之添加，第1族及第2族之添加提供一具 编減頸強度、縮減頸長度及一加強基質線強度之金合金薄 線，以便於進一步減少斷裂長度，除S i及第1族與第2族 之添加外，第3族元素之添加使其易於形成具增強焊接強 度之良好突塊，如此’當基質線被拉出時，突塊不會2H2J 斷裂。 審旆例 藉使用純度在99.995¾以上之電解質金，將具如第1 、3及6表所示之化學成份之金合金於熔化爐中熔化、鑄 入錠鐵、滾轉並畫線以形成具最後直徑25um之金合金薄線 ，其可於空氣下連壤輾壓成控制的延長之線。 在作為線焊接之高速自動焊接中，在線之端部藉弧放 電以形成金合金球，且以掃描電子顯微鏡加以觀察之•將 球分等，如"穩定”球以” ”標示，”瑕疵”球以” A ”標示 由於瑕疵球具瑕疵形狀且球端有收縮凹洞，故其無法於半 導體電極上形成良好焊接。 藉連續高速自動焊接而形成金合金突塊，如此，上述 之金合金球藉超音波輔助熱壓焊接法焊接至liim厚，高純 度鋁薄膜電極成形於半導體晶片之上，且將基質線拉至上 部以於其頸部將該線斷裂。 基於微觀量測500個突塊，藉突塊高度與變化估量於頸 部上之斷裂長度。 在剪力實驗，以100次斷裂承載之平均值以估量突塊 之焊接強度，在剪力實驗中，基質線偽受控於鋁電極上3 -------„-----^ ^-----訂 (請先閱讀背面之注意事項再填寫本f ) 本紙張尺度適用中國國家標隼（CNS〉A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 __B7 _五、發明説明（10 ) U1H之點’將鉤垂直向晶Μ表面搬移，然後，記錄其斷裂時 之剪力。 於室溫強度與高溫強度情形下各量測20線試樣，以計 算頸部與基質線間之強度差，室溫強度偽於室溫下所測得 之拉伸強度，高溫強度傜將線置於設定250°C溫度下之垂 直高溫爐20秒所測得之拉伸強度。 第1至4表摘要根據本發明之線的結果，其中，線編 號1至3為對應於申請專利範圍第1及5項，線編號4至 14為對應於申請專利範圍第2及6項，線編號15至29為對 應於申請專利範圍第3及7項，線編號30至40為對應於申 請專利範圍第4及8項，線編號41至47為對應於申請專利 範圍第1及8項。 表5及6摘要在本發明之申請專利範圍化學成份外之比 較線之結果。 由結果可清楚得知，相較於比較線C1及C2號，本發明 之含Si線具一較小之突塊高度；另，進一步包含除Si外之 第一族元素之本發明之線；具一減少之突塊高度變化，除 S i外呙含第二族元素之本發明之線具增大之高溫強度與室 溫強度間之強度差；便於減少突塊之高度，由此亦可見， 除Si外可進一步含第三族元素之本發明之線，其於保持其 縮減突塊高度外，增加其焊接強度。 如上述所言，本發明提供一可有利應用於無線焊接之 金合金薄線，其適用於半導體晶片之高密度裝配，根據本 發明之金合金薄線提供一金合金突塊，該突塊具有良好焊 -13 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ' (請先閱讀背面之注意事項再填寫本頁) 装· 訂 A7 B7五、發明説明（11 ) 接強度及縮減長度，並於焊接至半導體晶片電極之球上時 ;減少頸斷裂長度之變化，。 圖式元件説明 1 - 線 6 -鋁電極墊 2 - 夾鉗 7 -半導體晶片 3 - 毛細管 8 -頸長度 4 - 頸 9 -突塊高度 5 - 突塊 -----------¾衣------·玎------ - 「 - ί (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標隼局真工消費合作社印裝 -14 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（12 (潴{\)盔饿枓)僻1城， (add _«)链淀¾^ 經濟部中央標準局員工消費合作社印製Printed by A7 _B7__ of the Central Standards Bureau of the Ministry of Economic Affairs—Consumer Cooperatives V. Description of the Invention (1) Background of the Invention 1. Field of the Invention The present invention relates to a gold alloy bump and a gold alloy thin wire for the gold alloy bump, or A metal protrusion to connect the outer rod to the electrode on the semiconductor device. 2. Description of related technologies _ Traditionally, most of the external rods and electrodes on semiconductor devices are welded by wire bonding. However, wire bonding cannot successfully handle the recent shrinkage of IC chips and thin film devices. Therefore, wireless soldering is often replaced. The automatic soldering method (TAB) includes forming a silver foil circuit on a polyamine resin tape, and using a metal protrusion called a bump to solder the TAB circuit rod to the electrode of the IC chip. Most of the bump is borrowed from the LS I crystal. An alloy bump is electroplated on the electrode. The gold-plated bump must form a barrier layer on the electrode before plating, the bump formation method is complicated and the production cost is increased, and it is not easy to mass-produce the wafer with the bump on it. problem. Another wireless soldering method, called the light soldering wafer method, connects the LSI wafer to the circuit board by the subsurface method, so it can be connected in the LSI area to facilitate high-density devices. However, in this method, most of the bumps are used for electrodes. On the connection. Figure 1 shows a pillar bump method, in which the bump is formed by a thin gold alloy wire with good wire bonding reliability. This method includes, as in the traditional wire bonding method, a thin gold alloy wire that passes through a capillary 3 —hole. A ball is formed on the top end by means of electric discharge. Ultrasonic waves are used to assist the heat through the capillary 3. The method is to solder the ball to the aluminum electrode 6 on the silicon semiconductor crystal 7 and the cost; The paper size of the clamp is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) --- ^ --- ^ ----- rA ------ order ------ ^ 泉 i: For (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A7 _B7 __ V. Description of the invention (2) 2 Clip 1 to break the line 1 at the neck 4 to increase the capillary 3. A protrusion 5 having a desired neck length 8 and a protrusion height 9 is formed. Because the stud bump method is based on the established wire bonding method, its advantages are that it can perform welding at high speed, low production cost, and can successfully use existing wire bonding equipment. Since the height of the bump has a significant effect on the distance between the LSI chip and the soldered circuit board and the soldering strength, it is important to have a uniform height for the bump that is the connection electrode. Otherwise, when the bump is formed by a wire, it must be To reduce the fracture height on the bump. However, as shown in Figure 2, the traditional gold alloy thin wire used for wire bonding has a wire breaking length or neck length of up to 300um on the solder ball, and the unstable changing fracture position also causes the neck length to be different. Fixed, this phenomenon is regarded as the traditional wire welding pad design to provide a near-ball heat-sensing area with an enhanced strength * to reduce possible damage when the circuit is connected and to prevent disconnection caused by rotation during processing and use. SUMMARY OF THE INVENTION The object of the present invention is to provide a thin gold alloy wire and short neck length bumps which are formed stably after the wire is broken after ball welding, as shown in FIG. 2 (b). Among them, an improved gold alloy Stud block with a short block height 9. The inventors conducted a study to understand the thin line of gold alloy, the broken part of the line or the neck has a controlled small length, and found that the length of the neck can be reduced by applying heat to the ball formation and controlled by adding components in the gold alloy Reduce neck strength. It was also found that the strength of the matrix line needs to be higher than the neck strength to reduce the change in the length of the bump, and the strength of the matrix line must be strong enough to provide the necessary processing capacity for line production. -5-This paper size is applicable to Chinese National Standard (CNS) A4 (210X297mm). I ------------------------------------------ (Please read the notes on the back before filling out this page) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ___ B7___ V. Invention Description (3) For the above purposes of the invention, the following gold alloy thin wires are provided: A Si from 0.2 to 500 ppm by weight and a thin gold alloy wire with the balance of gold and unavoidable impurities; a Si from 0.2 to 500 ppm by weight and PPmig from 0.2 to 300 total weight free Ca, Be, La At least one element of the group consisting of Ce and Ce, and a thin gold alloy wire with the balance being gold and unavoidable impurities; a Si from 0.2 to 500 weight ppm and a total weight PPm from 0.2 to 5000 selected from Y, Sc, At least one element of the group consisting of Sr, Ga, Ge, and In, and a gold alloy thin wire with the balance being gold and unavoidable impurities; a kind selected from 0.2 to 500 weight ppm of Si and 0.2 to 500 total weight ppm At least one element of the group consisting of free Cu, Pd, Pt, A1, and Mη, and the balance is the gold of the inevitable impurity Gold thin wire; a compound consisting of 0.2 to 500 ppm by weight of Si and 0.2 to 300 ppm by weight of at least one element selected from the group consisting of Ca, Be, La, Ce, etc., 1 to 500 ppm by weight selected from Y, Sc, Sr, Ga, Ga, In and other groups consisting of at least one element and the balance of gold and thin gold alloy inevitable impurities; a wire from 0.2 to 5000 weight ppm Si and 0.2 to 300 total weight PPm At least one element selected from the group consisting of Ca, Be, La, Ce and the like, 2 to 1000 weight PPm At least one element selected from the group consisting of Cu, Pd, Pt, A1, Mη and the like and the balance is gold and Inevitable impurities of thin gold alloy wiresi i A 0.2 to 5000 wt ppm Si and 1 to 50Q total wt ppm at least one element selected from the group consisting of Y, Sc, Sr, Ga, Ge, etc., 2 to 10〇σ 重 童 ppm is selected from the group consisting of Cu, Pd, Pt, A1, Mη, etc. (Please read the precautions on the back before filling this page)-The size of the bound paper is subject to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) A7 _B7_ V. Description of the invention (4) At least one element and the balance are gold and inevitable impurities Gold alloy thin wire: and at least one element selected from the group consisting of Ca, Be, La, Ce, etc., from 0.2 to 5000 weight ppm of Si and 0.2 to 300 total weight ppm, selected from Y, At least one element of the group consisting of Sc, Sr, Ga, Ge, and In, 2 to 1000 weight ppm, and at least one element selected from the group consisting of Cu, Pd, Pt, A1, and Mη, and the balance are gold and Inevitable impurities of gold alloy thin wire. According to the present invention, it also provides the following gold alloy bumps: a gold alloy bump having a reduced neck height, from 0.2 to 5000 weight of PPm, and a balance of gold and unavoidable impurities; a reduced neck height , S i _ from 0.2 to 5000 ppm by weight, 0.2 to 300 ppm by weight, at least one element selected from the group consisting of Ca, Be, La, Ce and the like, and a gold alloy protrusion with a balance of gold and unavoidable impurities Block; a Si with reduced neck height, from 0.2 to 5000 weight ppm Si, 1 to 500 total weight ppm, at least one element selected from the group consisting of Y, Sc, Sr, Ga, Ga and In and the balance is gold Gold alloy bumps with unavoidable impurities; printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ---------------- ^ clothing 1 (Please read the precautions on the back before filling this page) A Si with reduced neck height, from 0.2 to 5000 weight ppm Si, 2 to 10,000 total weight ppm, at least one element selected from the group consisting of Cu, Pd, Pt, A1, Mη and the like, and the balance is gold and inevitable impurities Gold alloy bump-block; a kind with reduced neck height, from 0.2 to 5000 Pi > m Si, 0.2 to 300 ppm by weight are selected from the group consisting of Ca, Be, La, and Ce to -7-This paper size applies to China National Standard (CNS) A4 (210X297 mm) Employees of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative A7 B7_V. Description of the invention (5) One less element, 1 to 500 ppm by weight, at least one element and the balance selected from the group consisting of Y, Sc, Sr ·, Ga, Ge, and In are A gold alloy bump of gold and unavoidable impurities; a Si having a reduced neck height, from 0.2 to 5000 weight ppm of Si, 0.2 to 300 total weight ppm selected from at least one of the group consisting of Ca, Be, La and Ce Element, 2 to 10,000 ppm by weight, at least one element selected from the group consisting of Cu, Pd, Pt, A1, Mη, etc., and a gold alloy bump having a balance of gold and unavoidable impurities; a reduced neck height, 0.2 to 5000 weight ppra of Si, 1 to 500 total weight ppm is selected from at least one element of the group consisting of Y, Sc, Sr, Ga, Ge, and In, and 2 to 10,000 weight ppm is selected from Cu, Pd, At least one element and the balance of the group consisting of Pt, A1 and Mη are gold and unavoidable impurities Alloy bump; a Si with reduced neck height, from 0.2 to 5000 ppm by weight, 0.2 to 300 ppm by weight, at least one element selected from the group consisting of Ca, Be, La, Ce, etc., 1 to 500 ppm by weight At least one element selected from the group consisting of Y, Sc, Sr, Ga, Ga, In and the like and 2 to 10,000 ppm by weight. At least one element selected from the group consisting of Cu, Pd, Pt, A 1 and Mη and the like. Gold alloy bumps with the balance of gold and unavoidable impurities; Brief description of the legend Figure 1 (a) sectional view showing the method of forming a pillar bump; Figures 2 (a) and (b) (1) a sectional view (A) shows a traditional long-necked stud block, and (b) shows a short-necked stud block according to the present invention; 窠 3 _ pseudo-curve ΊΙ, whose face is shown as a running ball ir's near ----------_ ^ ------, order ------ i. _ |; I (Please read the notes on the back before filling this page) The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. A7 B7. __V. Description of the invention (6) Neck hardness of the neck, etc. According to this Comparison of Mingzhi Lines A, B and C with traditional lines. DESCRIPTION OF THE PREFERRED EMBODIMENT A thin gold alloy wire and a gold alloy bump according to the present invention will be specifically described as follows. Due to the thermal interaction between the ball formation, recrystallization occurs in the neck of the bump and reduces the strength of the neck of the bump compared to the matrix line. When the bump is formed, it is important to control the break of the line in the heat-sensitive area. At high strength; it must also provide a reduced neck strength. When the amount of Si stored in gold is 0.2 to 5000 ppm by weight, the neck strength is significantly reduced, so it is easy to reduce the fracture length. This is because the high temperature strength is reduced by the addition of Si, which is considered to be related to gold-S. The i system is a total mixture system. The Si content must be above 0.2 weight ppm to provide a substantial performance to reduce high temperature strength, but it must not be greater than 5000 weight ppm to provide a good cycle, and avoid welding difficulties when the electrode location or distance between electrodes is short. On the one hand, the Si content greater than 100 ppm by weight has an advantage in that it can increase the strength so as to form a thin wire diameter below 25nn !, but on the other hand, it will lead to immediate tempering and may sometimes be softened as necessary. Line to prevent the problem of marked wear of the wafer. However, since Si precipitation will increase the strength of the matrix line, the Si content must exceed 100 ppm by weight, so as to reduce the change in line height. In addition to the strength of the neck. Recrystallized region, the length of the recrystallized region is also an important factor controlling the length of the line break. Although the pure Si addition significantly reduces the neck strength, the thermal sensing area may lead to -9-This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ----- ^ ---- pack- ---- Order ------ ^ i: i (Please read the notes on the back before filling out this page) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (7) Correspondence The length of the line break that varies depending on the state of the line when it breaks. In order to provide a short-neck fracture length, in addition to the above Si, the alloy contains at least one of a group consisting of 0.2 to 300 weight PPm in total, including Ca, Be, La, and Ce (hereinafter referred to as Group 1 elements). The addition of element * Si facilitates the recrystallization of the heat sensitive area, while the addition of Group 1 elements will compress the recrystallization at the end of the heat sensitive area and limit the range of the heat sensitive area to the vicinity of the ball so that the line on the ball breaks. Can reduce the change in the height of the bump. In other words, the Group 1 element will selectively compress S i at the end of the heat-sensitive region to cause growth in the heat-sensitive region, and it will not disturb the crystals near the high-temperature spheres usually grown by Si. Figure 3 shows the heat The hardness of the line near the area can be seen from the third figure. Compared with the traditional commercial line, the Si line A of the present invention has a reduced neck strength. The line S of the present invention and the line B of the Group 1 element when the vicinity of the ball is At low hardness, it has a reduced length in the recrystallized area with reduced hardness, which means that the synergy between Si and Group 1 is beneficial to the occurrence of neck fracture. Group 1 elements must be present in a total amount of 0.2 to 300 weight ppm. When Group 1 elements are at most 0.2 weight ppm in total, neck fracture is virtually impossible. When Group 1 elements are greater than 300 total weight ppm At this time, a shrinkage recess is generated near the ball tip, which reduces the welding ability after ball welding. In order to facilitate the break of the thread in the neck, compared with the part of the matrix line that is not affected by heat, the neck must have a weakened strength. For this purpose, the strength of the matrix line is effectively increased. The total amount of at least one element selected from the group consisting of Y, Sc, Sr, Ga, and Ge (hereinafter referred to as Group 2 elements) is 1 to 500 weight PPra to provide a function to facilitate neck fracture when the bump is formed. Figure 3 also shows and shows a line C with added Si and Group 2 elements that has an enhanced matrix line strength, and (please read the precautions on the back before filling out this page)-installation, vs. This paper size applies China National Standard (CNS) A4 (210X 297 mm) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (δ) Provides an increased strength difference between the matrix line and the neck. The general thread manufacturing method includes a heating heat treatment to ensure that the line is straight. When this heating is performed at high temperature, it may reduce the strength of the line containing only si-an additive, and the addition of group 2 elements will increase the matrix line. Strength without changing high-temperature strength to avoid breakage of the line portion other than the neck 'and also to provide a straight line with a good degree of diameter less than 25um in diameter to form a ball' easy to manufacture and easy to process. The total amount of Group 2 elements must be between 1 and 500 weight pPm. When it is less than 1 weight PP m, the strength of the matrix line will not be significantly increased. When the amount is greater than 500 weight ρρπ, the shape of the ball will be unstable. This makes it difficult to generate a ball corresponding to the desired electrode distance. In order to form a bump on the A1 electrode of the LSI wafer, the gold alloy bump must have good soldering ability with aluminum. The addition of S i alone cannot improve its ball soldering ability with A 丨. It is selected from at least one of Cu, Pd The total addition amount of one element (hereinafter referred to as Group 3 element) of a group consisting of Pt, Al, In, and Mη is between 2 and 10,000 weight PPm, which can increase the welding strength between the gold alloy ball and the M substrate. In order to improve the welding ability with the A 1 electrode, when soldering the ball, the M oxide film on the surface must be cracked, and the larger ball hardness will facilitate the cracking of the vaporized film. However, it must be noted that excessive hardness can cause problems because the application of ultrasonic waves can eliminate the A 1 film of the ball when soldering without reducing the soldering strength or damaging the wafer. It has also been found that when small bumps corresponding to a reduced electrode distance are formed, a better soldering ability can be maintained by a stronger ball hardness. When the total amount of the Group 3 elements is less than 2 ppm by weight, the welding strength is not significantly increased. When the total amount is greater than 10,000 ppm by weight, a reduction in welding ability due to a large increase in ball hardness or a defective spherical shape usually occurs. -11-This paper size applies to the Chinese national standard (CMS> A4 size (210X297 mm) ---------- 1 ^ ------ 1T ------ Just.-: < (Please read the notes on the back before filling this page) A7 B7 Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (9) To supplement the addition of Si, Groups 1 and 2 The addition provides a thin gold alloy wire with reduced neck strength, reduced neck length, and enhanced matrix line strength to further reduce the fracture length. In addition to Si and the addition of Groups 1 and 2, Group 3 The addition of elements makes it easy to form good bumps with enhanced welding strength, so that when the matrix wire is pulled out, the bumps will not break in 2H2J. For example, the use of electrolyte gold with a purity of more than 99.995¾ will be Gold alloys with the chemical composition shown in Tables 1, 3, and 6 are melted in a melting furnace, cast into ingot iron, rolled and drawn to form a thin gold alloy wire with a final diameter of 25um, which can be connected in air. Rolled into a controlled extended line. In high-speed automatic welding as a line welding, the end of the line is discharged by an arc to form an alloy. Golden balls, and observe them with a scanning electron microscope • Classify the balls, such as " Stable " balls are marked with " ", " defective " balls are marked with " A " Therefore, it cannot form good welding on semiconductor electrodes. Gold alloy bumps are formed by continuous high-speed automatic welding. In this way, the above-mentioned gold alloy balls are welded to a liim thick, high-purity aluminum thin film electrode by ultrasonic-assisted hot-press welding. On the semiconductor wafer, and pull the matrix line to the upper part to break the line at the neck. Based on the micro-measurement of 500 bumps, the length of the break on the neck is estimated by the height and change of the bumps. In the experiment, the average value of 100 fracture loads was used to estimate the welding strength of the bump. In the shear test, the matrix line was pseudo-controlled on the aluminum electrode. 3 ------- „----- ^ ^- ---- Order (Please read the notes on the back before filling in this f) This paper size applies to Chinese national standard (CNS> A4 size (210X297 mm)) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 __B7 _5 , Description of the invention (10) U1H point Move the hook perpendicularly to the surface of the crystal M, and then record the shear force when it breaks. Measure 20 line samples at room temperature and high temperature strength to calculate the difference in strength between the neck and the matrix line. Room temperature The strength is pseudo tensile strength measured at room temperature, high temperature strength: tensile strength measured by placing the wire in a vertical high temperature furnace at a set temperature of 250 ° C for 20 seconds. Tables 1 to 4 Abstract According to the invention Results of the line, among which line numbers 1 to 3 correspond to items 1 and 5 of the scope of patent application, line numbers 4 to 14 correspond to the scope of patent application items 2 and 6, and line numbers 15 to 29 correspond to the application Items 3 and 7 of the patent scope, line numbers 30 to 40 correspond to items 4 and 8 of the patent application scope, and line numbers 41 to 47 correspond to items 1 and 8 of the patent application scope. Tables 5 and 6 summarize the results of the comparison of the chemical composition outside the scope of the patent application of the present invention. From the results, it is clear that compared with the comparison lines C1 and C2, the Si-containing wire of the present invention has a smaller bump height; in addition, the wire of the present invention further including a first group element other than Si; With a reduced change in the height of the bump, in addition to Si, the wire of the present invention containing a second group of elements has an increased intensity difference between high temperature strength and room temperature strength; it is also easy to reduce the height of the bump, which can also be seen from this In addition to Si, the wire of the present invention may further contain a third group element, which increases its welding strength while maintaining its reduced bump height. As mentioned above, the present invention provides a gold alloy thin wire that can be advantageously applied to wireless welding, which is suitable for high-density assembly of semiconductor wafers. According to the gold alloy thin wire of the present invention, a gold alloy bump is provided, the bump having Good Welding-13-This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297mm) '(Please read the precautions on the back before filling this page) Binding and ordering A7 B7 V. Description of invention (11) Joint strength And reduce the length, and when soldering to the ball of the semiconductor wafer electrode; reduce the change in neck fracture length. Schematic component description 1-line 6-aluminum electrode pad 2-clamp 7-semiconductor wafer 3-capillary 8-neck length 4-neck 9-protrusion height 5-protrusion ----------- ¾ 衣 ------ · 玎 -------「(ί (Please read the precautions on the back before filling out this page) Printed by the Real Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs -14-This paper Standards apply to Chinese National Standards (CNS) A4 specifications (210X297 mm) A7 B7 V. Description of the invention (12 (潴 {\) helmet hungry 僻) Secluded 1 city, (add _ «) Chain Lake ¾ Central Standards Bureau Printed by Employee Consumer Cooperative

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7 B 明説 明發 五 經濟部中央標準扃員工消費合作社印製 “(糖以琢激'长)擗寸城 埘， 岖？ 弊一 ψ, D r—1 <〇 Γν» 卜 m (Ν ΓΝ ΚΩ CN ΓΟ UD (Ν <N cn CN <〇 rH in CN σ\ \Ώ fN r~( (N cn Ul Oi o m CN rH γμ CN 04 m CN m \〇 rn fN m m cn fN 守 卜 m ΓΟ CO 04 m B 卜 Ο ο ·—ί Ο Γ*' σ*» 分 00 Ch CN rn 00 σ\ tn (N m 卜 fH r~t LO r—< CN fH CO rH rH in UD i—i t—i 卜 00 fN r-H 寸 «Η (Ν r—1 in 卜 04 r-H LO 00 r-< ι—1 o XT rg i—i 々 CO (N <—H m cr> (N CN cn CD σ» KD r~{ \〇 (Ν CN σ» rn CN <Ti 埘：： 软 ιη \Ό Οί LO \Ό ι~1 々 UD CO rn <〇 r*H m UD 00 o 卜 <7> 00 CO rn t>i ·—( £ r—< £ in rn r-H CO fN (Ν L〇 00 f—( r- KO CO rH 々 LO CO ΓΟ UD rr OJ CO m CO 卜 rH Γ〇 C0 (N m 00 糊 缔 CTi m •^Γ Ο <〇 ^r CO sr UD CN 〇 n Tj* CN <〇 OJ ΓΜ m CN 卜 ίΝ VJD CN CO CN CD CN 卜 CN m rr m kD ΓΝ •^r 寸 Οί ΓΝ ττ rH <T f· Ο 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Ο Ο o 〇 〇 〇 〇 〇 〇 〇 〇 〇 m m 雜 m CN ΓΝ CO fN σ\ OvJ fN m n cn CO in \χ> Γ〇 CO m cn r〇 o 寸 CN 'C* m 寸 ιΛ <Γ UD 卜 (請先閱讀背面之注意事項再填寫本頁) 装- 訂 ·" 本纸浪尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 五、發明説明（ A7 B7 經濟部中央標準局員工消費合作杜印製 -j·^ 一；,..:: r 一 -」::一— 3 & ¢1 <]3U <t〇u m ΌΒ <(0U _ <45 m ‘cu M <1(U 酬 •3.BU <jSU _ _ ^ai _ 怨 m <«GU 5« 张 ¢1 ^Ski _ ¢1 C m 〇 o o o LO U CU m o m o o o s 〇 1 Ό CU to o 〇 〇 o «—i r-4 o o o r*' P U r—I 〇 o o ΓΜ *—t o o o ro C Μ 〇 〇 rH Q) ◦ 〇 〇 (N f〇 Ο 〇 〇 m •t U in o o tH o m 〇 〇 m r〇 in o o o fN ① u in o o 〇 o r—( (Q o o r^i 01 m r—( o f〇 u o \D n O O rH •Ή cn o LT| 〇 o 〇 m in s u*> tD o lO o in in ir> rr m S S s s s S ! t •Ή u OJ U ΓΟ U 寸 u m U U r- U CO U cn U o rH u <-1 U (N u ro U 寸 rH u in 〇 <〇 u I---------1衣------ΪΤ------I' . { : ; i (請先閱讀背面之注意事項再磺寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 五、發明説明（ 17 A7 B7 經濟部中央標準局員工消費合作社印製 鹋， 赠？ 龄i d Γ0 m ir> cr\ 〇 CN ττ CN in o r-W in CN UD (N 卜 cn σ\ CO (N (N 卜 CO rH 〇 (N <N CN in S S3 5 rr 〇 u〇 04 U〇 o <N ΓΜ in cn CO m ^r cn m rH CN r—t U~J (N cn 〇 r—< in cn O r—t l〇 s fN cn 00 r* ro •—i r—i o IN r~H m CO r-1 r-i rH 々 i—1 rH CN r- rH r-i ro o rH i—t Η CT» 3¾ 一 & (N ΓΠ UD 00 CN t-H s m r〇 r〇 fN KO r- •^r Γ>· r〇 守 m VO f—i CN CM m VI5 <N 寸 o VJD 卜 CO 00 f-H VD 00 r—H S 栅 ^ m — 徙 i〇 <N CN 04 r- (N 〇 ro 00 CN 〇 CN 切 r〇 cn o u~i CO CN 々 CN 卜 CS CN 必 Oi m (N 〇 〇 0 <J 〇 <3 〇 〇 <3 < 〇 O <1 <1 < < SS rH U (N U r〇 U U to u V£) u r- U CD a cn U o <—H a f—i u CN t—4 U m u rH a m rH u KO r~H u 0- -2 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閱讀背面之注意事項再"寫本頁) -裝_ 訂 線7 B Explains that the Central Standard of the Ministry of Economic Affairs issued by the Employee Consumer Cooperatives “(Sugar to Cut Excite's Long)” Inch City, 岖? Disadvantage ψ, D r-1 < 〇Γν »bu m (Ν ΓΝ ΚΩ CN ΓΟ UD (N < N cn CN < 〇rH in CN σ \ \ Ώ fN r ~ ((N cn Ul Oi om CN rH γμ CN 04 m CN m \ 〇rn fN mm cn fN Observer m ΓΟ CO 04 m B 卜 Ο ο · —ί Ο Γ * 'σ * »points 00 Ch CN rn 00 σ \ tn (N m 卜 fH r ~ t LO r— < CN fH CO rH rH in UD i—it— i bu00 fN rH inch «Η (N r-1 in bu 04 rH LO 00 r- < ι-1 o XT rg i-i 々CO (N < -H m cr > (N CN cn CD σ» KD r ~ {\ 〇 (ΝCN σ »rn CN < Ti 埘 :: soft ιη \ Ό Οί LO \ Ό ι ~ 1 々UD CO rn < 〇r * H m UD 00 o bu < 7 > 00 CO rn t > i · — (£ r— < £ in rn rH CO fN (Ν L〇00 f— (r- KO CO rH 々LO CO ΓΟ UD rr OJ CO m CO rrH Γ〇C0 (N m 00 Paste CTi m • ^ Γ Ο < 〇 ^ r CO sr UD CN 〇n Tj * CN < 〇OJ ΓΜ m CN 卜 ί VJD CN CO CN CD CN CNCN m rr m kD ΓΝ • ^ r 寸 Οί ΓΝ ττ rH < T f · 〇 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇 0 〇〇〇〇〇〇〇〇〇mm mm m m ΓΝ CO fN σ \ OvJ fN mn cn CO in \ χ > Γ〇CO m cn r〇 o inch CN 'C * m inch ιΛ < Γ UD (please read the precautions on the back before filling this page) Binding-Binding " This paper wave size is applicable to China National Standard (CNS) A4 specification (210 X 297 (5mm) V. Description of the invention (A7 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -j · ^ 一;, .. :: r 一-":: 一 — 3 & ¢ 1 <] 3U < t〇um ΌΒ < (0U _ < 45 m 'cu M < 1 (U pay • 3.BU < jSU _ _ ^ ai _ grievance m < «GU 5« Zhang ¢ 1 ^ Ski _ ¢ 1 C m 〇ooo LO U CU momooos 〇1 Ό CU to o 〇〇o «—i r-4 ooor * 'PU r—I 〇oo ΓΜ * —tooo ro C Μ 〇〇rH Q) ◦ 〇〇 (N f〇〇 〇〇m • t U in oo tH om 〇〇mr〇in ooo fN ① u in oo 〇or— ((Q oor ^ i 01 mr— (of〇uo \ D n OO rH • Ή cn o LT | 〇m 〇m in su * > tD o lO o in in ir > rr m SS sss S! T • Ή u OJ U ΓΟ U inch um UU r- U CO U cn U o rH u < -1 U (N u ro U inch rH u in 〇 < 〇u I ------- --1 clothing ------ ΪΤ ------ I '. {:; I (Please read the notes on the back before writing this page) This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) V. Description of the invention (17 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, gift? Age id Γ0 m ir> cr \ 〇CN ττ CN in o rW in CN UD (N bu cn σ \ CO (N (N bu CO rH 〇 (N < N CN in S S3 5 rr 〇u〇04 U〇 o < N ΓΜ in cn CO m ^ r cn m rH CN r—t U ~ J (N cn 〇r— < in cn O r—tl〇s fN cn 00 r * ro • —ir—io IN r ~ H m CO r-1 ri rH 々i—1 rH CN r- rH ri ro o rH i—t Η CT »3¾ a & (N ΓΠ UD 00 CN tH smr〇r〇fN KO r- • ^ r Γ > · r〇 m m VO f-i CN CM m VI5 < N inch o VJD bu CO 00 fH VD 00 r-HS grid ^ m — migration i〇 < N CN 04 r- (N 〇ro 00 CN 〇CN 切 r〇cn ou ~ i CO CN 々CN BU CS CN 必 Oi m (N 〇〇0 < J 〇 < 3 〇〇 < 3 < 〇O < 1 < 1 < < SS rH U (NU r〇UU to u V £) u r- U CD a cn U o < —H af—iu CN t—4 U mu rH am rH u KO r ~ H u 0- -2 sheets Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before writing this page)

Claims (1)

TW85103401A 1995-03-24 1996-03-21 Gold alloy thin wire and gold alloy bump TW379254B (en)

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JP06659195A JP3571793B2 (en) 1995-03-24 1995-03-24 Gold alloy wire and gold alloy bump

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TW379254B true TW379254B (en) 2000-01-11

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MY (1) MY126628A (en)
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KR20030096985A (en) * 2002-06-18 2003-12-31 헤라우스오리엔탈하이텍 주식회사 Gold alloy wire for bonding of semiconductor device

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JPH08264544A (en) 1996-10-11
SG52603A1 (en) 1998-09-28
KR960034441A (en) 1996-10-22
MY126628A (en) 2006-10-31
KR0185194B1 (en) 1999-04-01
JP3571793B2 (en) 2004-09-29

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