TW350932B - Process for amending mask pattern and mask, method of exposure using the same and semiconductor apparatus - Google Patents

Process for amending mask pattern and mask, method of exposure using the same and semiconductor apparatus

Info

Publication number
TW350932B
TW350932B TW085108503A TW85108503A TW350932B TW 350932 B TW350932 B TW 350932B TW 085108503 A TW085108503 A TW 085108503A TW 85108503 A TW85108503 A TW 85108503A TW 350932 B TW350932 B TW 350932B
Authority
TW
Taiwan
Prior art keywords
pattern
design pattern
mask
evaluation
evaluation points
Prior art date
Application number
TW085108503A
Other languages
English (en)
Inventor
Keisuke Tsudaka
Original Assignee
Sony Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Co Ltd filed Critical Sony Co Ltd
Application granted granted Critical
Publication of TW350932B publication Critical patent/TW350932B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
TW085108503A 1995-07-17 1996-07-13 Process for amending mask pattern and mask, method of exposure using the same and semiconductor apparatus TW350932B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17995395A JP3331822B2 (ja) 1995-07-17 1995-07-17 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置

Publications (1)

Publication Number Publication Date
TW350932B true TW350932B (en) 1999-01-21

Family

ID=16074851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108503A TW350932B (en) 1995-07-17 1996-07-13 Process for amending mask pattern and mask, method of exposure using the same and semiconductor apparatus

Country Status (5)

Country Link
US (3) US6014456A (zh)
JP (1) JP3331822B2 (zh)
KR (1) KR100444558B1 (zh)
DE (1) DE19628874A1 (zh)
TW (1) TW350932B (zh)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
DE19738717C1 (de) * 1997-09-04 1999-04-22 Siemens Ag Verfahren zur Herstellung eines integrierten Schaltkreises
US6757645B2 (en) * 1997-09-17 2004-06-29 Numerical Technologies, Inc. Visual inspection and verification system
US5985497A (en) * 1998-02-03 1999-11-16 Advanced Micro Devices, Inc. Method for reducing defects in a semiconductor lithographic process
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
JP2000020564A (ja) * 1998-06-29 2000-01-21 Mitsubishi Electric Corp レイアウトパターンデータ補正装置、レイアウトパターンデータ補正方法、その補正方法を用いた半導体装置の製造方法、および、半導体装置の製造プログラムを記録した記録媒体
JP2000089448A (ja) * 1998-09-11 2000-03-31 Fujitsu Ltd 露光用パターン表示・検査・修正方法
US6467076B1 (en) * 1999-04-30 2002-10-15 Nicolas Bailey Cobb Method and apparatus for submicron IC design
JP4226729B2 (ja) * 1999-06-30 2009-02-18 株式会社東芝 マスクパターンの補正方法
JP2001014376A (ja) * 1999-07-02 2001-01-19 Mitsubishi Electric Corp デザインルール生成システムおよびそのプログラムを記録した記録媒体
JP2001028060A (ja) 1999-07-15 2001-01-30 Toshiba Corp 微細パターン測定方法、微細パターン測定装置、及び微細パターン測定プログラムを格納したコンピュータ読み取り可能な記録媒体
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
US6426269B1 (en) * 1999-10-21 2002-07-30 International Business Machines Corporation Dummy feature reduction using optical proximity effect correction
US6625800B1 (en) * 1999-12-30 2003-09-23 Intel Corporation Method and apparatus for physical image based inspection system
WO2001051993A1 (en) * 2000-01-14 2001-07-19 Advanced Micro Devices, Inc. System, method and photomask for compensating aberrations in a photolithography patterning system
US6584609B1 (en) * 2000-02-28 2003-06-24 Numerical Technologies, Inc. Method and apparatus for mixed-mode optical proximity correction
US6642529B1 (en) 2000-03-28 2003-11-04 Koninklijke Philips Electronics N.V. Methods for the automated testing of reticle feature geometries
US6523162B1 (en) 2000-08-02 2003-02-18 Numerical Technologies, Inc. General purpose shape-based layout processing scheme for IC layout modifications
US6625801B1 (en) * 2000-09-29 2003-09-23 Numerical Technologies, Inc. Dissection of printed edges from a fabrication layout for correcting proximity effects
US6792590B1 (en) * 2000-09-29 2004-09-14 Numerical Technologies, Inc. Dissection of edges with projection points in a fabrication layout for correcting proximity effects
US6539521B1 (en) * 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6453457B1 (en) * 2000-09-29 2002-09-17 Numerical Technologies, Inc. Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
JP2002122978A (ja) * 2000-10-18 2002-04-26 Sony Corp マスクデータの検証方法および検証プログラムを記録したコンピュータ読み取り可能な記録媒体
US6665856B1 (en) * 2000-12-01 2003-12-16 Numerical Technologies, Inc. Displacing edge segments on a fabrication layout based on proximity effects model amplitudes for correcting proximity effects
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
US6653026B2 (en) 2000-12-20 2003-11-25 Numerical Technologies, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
US6578190B2 (en) * 2001-01-11 2003-06-10 International Business Machines Corporation Process window based optical proximity correction of lithographic images
JP2002311561A (ja) * 2001-04-11 2002-10-23 Sony Corp パターン形成方法、パターン処理装置および露光マスク
US6789237B1 (en) * 2001-05-11 2004-09-07 Northwestern University Efficient model order reduction via multi-point moment matching
US6721938B2 (en) * 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
US6611953B1 (en) * 2001-06-12 2003-08-26 Lsi Logic Corporation Mask correction optimization
JP4691840B2 (ja) * 2001-07-05 2011-06-01 ソニー株式会社 マスクパターン生成方法およびフォトマスク
JP4607380B2 (ja) * 2001-07-23 2011-01-05 富士通セミコンダクター株式会社 パターン検出方法、パターン検査方法およびパターン修正、加工方法
JP4098502B2 (ja) * 2001-07-30 2008-06-11 株式会社東芝 マスクの製造方法とｌｓｉの製造方法
US6684382B2 (en) 2001-08-31 2004-01-27 Numerical Technologies, Inc. Microloading effect correction
US6670082B2 (en) * 2001-10-09 2003-12-30 Numerical Technologies, Inc. System and method for correcting 3D effects in an alternating phase-shifting mask
US6880135B2 (en) * 2001-11-07 2005-04-12 Synopsys, Inc. Method of incorporating lens aberration information into various process flows
US6763514B2 (en) * 2001-12-12 2004-07-13 Numerical Technologies, Inc. Method and apparatus for controlling rippling during optical proximity correction
US20030233630A1 (en) * 2001-12-14 2003-12-18 Torbjorn Sandstrom Methods and systems for process control of corner feature embellishment
US7106490B2 (en) * 2001-12-14 2006-09-12 Micronic Laser Systems Ab Methods and systems for improved boundary contrast
US6753115B2 (en) 2001-12-20 2004-06-22 Numerical Technologies, Inc. Facilitating minimum spacing and/or width control optical proximity correction
JP2003255508A (ja) 2002-02-28 2003-09-10 Oki Electric Ind Co Ltd マスクパターンの補正方法、フォトマスク、露光方法、半導体装置
JP4152647B2 (ja) * 2002-03-06 2008-09-17 富士通株式会社 近接効果補正方法及びプログラム
US7386433B2 (en) * 2002-03-15 2008-06-10 Synopsys, Inc. Using a suggested solution to speed up a process for simulating and correcting an integrated circuit layout
US20050106476A1 (en) * 2002-04-16 2005-05-19 Jens Hassmann Method for producing a mask adapted to an exposure apparatus
KR100468741B1 (ko) * 2002-06-22 2005-01-29 삼성전자주식회사 노광 장치의 어퍼처 설계를 위한 시뮬레이션 방법 및장치, 그리고 시뮬레이션 방법을 기록한 기록매체
US6687895B2 (en) 2002-07-03 2004-02-03 Numerical Technologies Inc. Method and apparatus for reducing optical proximity correction output file size
US7000208B2 (en) * 2002-07-29 2006-02-14 Synopsys,Inc. Repetition recognition using segments
JP3875158B2 (ja) 2002-08-09 2007-01-31 株式会社東芝 露光装置判定システム、露光装置判定方法、露光装置判定プログラム及び半導体装置の製造方法
US6792592B2 (en) 2002-08-30 2004-09-14 Numerical Technologies, Inc. Considering mask writer properties during the optical proximity correction process
US6807663B2 (en) 2002-09-23 2004-10-19 Numerical Technologies, Inc. Accelerated layout processing using OPC pre-processing
US6928635B2 (en) 2002-09-25 2005-08-09 Numerical Technologies, Inc. Selectively applying resolution enhancement techniques to improve performance and manufacturing cost of integrated circuits
US7172838B2 (en) * 2002-09-27 2007-02-06 Wilhelm Maurer Chromeless phase mask layout generation
US6794096B2 (en) * 2002-10-09 2004-09-21 Numerical Technologies, Inc. Phase shifting mask topography effect correction based on near-field image properties
JP3952986B2 (ja) * 2003-04-04 2007-08-01 株式会社東芝 露光方法及びそれを用いた露光量算出システム
US7010764B2 (en) * 2003-04-14 2006-03-07 Takumi Technology Corp. Effective proximity effect correction methodology
US6961920B2 (en) * 2003-09-18 2005-11-01 International Business Machines Corporation Method for interlayer and yield based optical proximity correction
JP2005156865A (ja) * 2003-11-25 2005-06-16 Fujitsu Ltd レチクル、レチクルの検査方法及び検査装置
JP4090986B2 (ja) * 2003-12-24 2008-05-28 東京エレクトロン株式会社 線幅測定方法，基板の処理方法及び基板の処理装置
US7856606B2 (en) * 2004-03-31 2010-12-21 Asml Masktools B.V. Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems
JP2007536564A (ja) * 2004-04-02 2007-12-13 クリア・シェイプ・テクノロジーズ・インコーポレーテッド 集積回路の製造における超解像プロセスのモデル化
US20050240895A1 (en) * 2004-04-20 2005-10-27 Smith Adlai H Method of emulation of lithographic projection tools
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
JP4528558B2 (ja) * 2004-05-28 2010-08-18 株式会社東芝 パターンのデータ作成方法、及びパターン検証手法
JP4593236B2 (ja) * 2004-10-29 2010-12-08 株式会社日立ハイテクノロジーズ 寸法計測走査型電子顕微鏡システム並びに回路パターン形状の評価システム及びその方法
JP4262690B2 (ja) * 2005-03-16 2009-05-13 株式会社日立ハイテクノロジーズ 形状測定装置および形状測定方法
JP5061422B2 (ja) * 2005-03-25 2012-10-31 凸版印刷株式会社 パターン補正方法及びパターン補正装置
JP4728676B2 (ja) * 2005-03-30 2011-07-20 富士通セミコンダクター株式会社 フォトマスクの製造方法、及びそのフォトマスクを用いた半導体装置の製造方法
KR100817065B1 (ko) * 2006-10-02 2008-03-27 삼성전자주식회사 미세패턴의 설계방법 및 그 장치
JP4254871B2 (ja) * 2007-02-09 2009-04-15 ソニー株式会社 光近接効果補正方法、光近接効果補正装置、光近接効果補正プログラム、半導体装置の製造方法、パターン設計制約策定方法および光近接効果補正条件算出方法
US7571418B2 (en) * 2007-02-20 2009-08-04 International Business Machines Corporation Simulation site placement for lithographic process models
JP4846635B2 (ja) 2007-03-22 2011-12-28 株式会社東芝 パターン情報生成方法
US7707538B2 (en) * 2007-06-15 2010-04-27 Brion Technologies, Inc. Multivariable solver for optical proximity correction
US20080320421A1 (en) * 2007-06-20 2008-12-25 Demaris David L Feature extraction that supports progressively refined search and classification of patterns in a semiconductor layout
KR100861376B1 (ko) * 2007-06-28 2008-10-02 주식회사 하이닉스반도체 광 강도 프로파일을 이용한 광 근접효과 보정방법
JP4998347B2 (ja) * 2008-03-27 2012-08-15 富士通セミコンダクター株式会社 マスクパターン作成方法
JP5148395B2 (ja) * 2008-07-11 2013-02-20 株式会社東芝 潜像強度分布の評価システム、潜像強度分布の評価方法及び潜像強度分布の評価プログラム
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US20130070222A1 (en) * 2011-09-19 2013-03-21 D2S, Inc. Method and System for Optimization of an Image on a Substrate to be Manufactured Using Optical Lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
JP5185235B2 (ja) * 2009-09-18 2013-04-17 株式会社東芝 フォトマスクの設計方法およびフォトマスクの設計プログラム
JP5398502B2 (ja) * 2009-12-10 2014-01-29 株式会社東芝 パターン作成方法、プロセス決定方法およびデバイス製造方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
US8326018B2 (en) * 2010-05-29 2012-12-04 Mentor Graphics Corporation Fast pattern matching
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
KR102185558B1 (ko) * 2013-08-27 2020-12-02 삼성전자주식회사 광학적 근접 보정 방법
JP6399751B2 (ja) * 2013-12-25 2018-10-03 キヤノン株式会社 マスクパターン作成方法、プログラム、マスク製造方法、露光方法及び物品製造方法
DE102017203841A1 (de) * 2017-03-08 2018-09-13 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Ermitteln einer Reparaturform zum Bearbeiten eines Defekts einer photolithographischen Maske
KR102349124B1 (ko) * 2017-06-06 2022-01-10 에이에스엠엘 네델란즈 비.브이. 측정 방법 및 장치
KR102585069B1 (ko) * 2018-06-04 2023-10-05 에이에스엠엘 네델란즈 비.브이. 패터닝 공정을 위한 공정 모델을 개선하는 방법
CN113168086A (zh) * 2021-03-19 2021-07-23 长江存储科技有限责任公司 用于设计光掩模的系统和方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2690960B2 (ja) * 1988-09-07 1997-12-17 株式会社日立製作所 拡大投影露光方法及びその装置
JP3265512B2 (ja) * 1992-06-09 2002-03-11 株式会社ニコン 露光方法
GB2291219B (en) * 1994-07-05 1998-07-01 Nec Corp Photo-mask fabrication and use
JP3297791B2 (ja) * 1994-11-16 2002-07-02 ソニー株式会社 露光方法およびレジストパターン算出方法
JP3409493B2 (ja) * 1995-03-13 2003-05-26 ソニー株式会社 マスクパターンの補正方法および補正装置
JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
US5754678A (en) * 1996-01-17 1998-05-19 Photon Dynamics, Inc. Substrate inspection apparatus and method

Also Published As

Publication number Publication date
DE19628874A1 (de) 1997-02-27
JP3331822B2 (ja) 2002-10-07
KR100444558B1 (ko) 2005-04-06
KR970007483A (ko) 1997-02-21
US6249597B1 (en) 2001-06-19
JPH0934095A (ja) 1997-02-07
US6014456A (en) 2000-01-11
US6154563A (en) 2000-11-28

Similar Documents

Publication Publication Date Title
TW350932B (en) Process for amending mask pattern and mask, method of exposure using the same and semiconductor apparatus
US20080301620A1 (en) System and method for model-based sub-resolution assist feature generation
ATE178998T1 (de) Maske für photolithographie
EP0905566A3 (en) Exposure method and method of producing a photolithographic mask
SG137657A1 (en) Method and apparatus for performing model-based layout conversion for use with dipole illumination
EP1043625A4 (en) METHOD AND APPARATUS FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING THE APPARATUS
TW200511145A (en) System and method for examining mask pattern fidelity
CN106950795A (zh) 辅助图形的形成方法
KR950025914A (ko) 반도체 소자의 미세패턴 형성방법
KR940016814A (ko) 노출방법, 그것에 사용하는 위상시프트마스크 및 그것을 사용한 반도체집적회로장치의 제조방법
SG138616A1 (en) Focus test mask, focus measurement method and exposure apparatus
US20170269470A1 (en) Efficient way to creating process window enhanced photomask layout
KR960011565A (ko) 노광장치 및 노광방법
JPS55165629A (en) Manufacture of semiconductor device
JP2004219587A (ja) 光近接補正パターンを有するフォトマスク用データの作成方法と、光近接補正パターンを有するフォトマスク
JPS56128946A (en) Photomask correcting method
KR970049060A (ko) 다중 노광에 의한 미세 패턴 형성 방법
JPS55135837A (en) Manufacture of photomask
JPH01134919A (ja) 光学投影露光装置
JPS6245026A (ja) 半導体集積回路の写真製版方法
JPS5619051A (en) Production of photo mask
JPS6428818A (en) Formation of semiconductor integrated circuit
KR950029843A (ko) 반도체 소자 제조용 포토마스크 및 이를 이용한 반도체 소자 패턴의 현상 균일도 체크 방법
TW200509199A (en) Method and apparatus for manufacturing multiple circuit patterns using a multiple project mask
Chiou et al. Development of automatic OPC treatment and layout decomposition for double dipole lithography for low-k1 imaging

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees