KR960011565A - 노광장치 및 노광방법 - Google Patents

노광장치 및 노광방법 Download PDF

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Publication number
KR960011565A
KR960011565A KR1019950028670A KR19950028670A KR960011565A KR 960011565 A KR960011565 A KR 960011565A KR 1019950028670 A KR1019950028670 A KR 1019950028670A KR 19950028670 A KR19950028670 A KR 19950028670A KR 960011565 A KR960011565 A KR 960011565A
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South Korea
Prior art keywords
semiconductor substrate
data
exposure
focus leveling
exposure process
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KR1019950028670A
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English (en)
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KR0171453B1 (ko
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후미오 사카이
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미타라이 하지메
캐논 가부시기가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

여기에 개시된 얼라인먼트방법 및 장치는, 1회의 노광공정에 있어서, 반도체기판의 얼라인먼트를 행하고, 반도체기판상의 각 쇼트위치에 대하여 반도체기판을 스텝앤리피트방식으로 이동시키면서 원판의 패턴을 각 쇼트위치에서 반도체기판상에 노광전사해도 되고, 상기 1회의 노광공정은 스텝앤리피트동작동안에 반도체기판이 위치결정되는 각 위치를 규정하는 복수의 배치데이터를 이용하여 해해도 된다.

Description

노광장치 및 노광방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도(A) 및 (B)는 각각 본 발명의 일실시예에 의한 스테퍼에 의해 노광된 쇼트의 레이아웃의 일례를 도시한 평면도.

Claims (4)

1회의 노광공정에 있어서, 반도체기판의 얼라인먼트를 행하고, 반도체기판상의 각 쇼트위치에 대하여 반도체기판을 스텝앤리피트방식으로 이동시키면서 원판의 패턴을 각 쇼트위치에서 반도체기판상에 노광전사하는 노광장치에 있어서, 스텝앤리피트동작동안에 반도체기판이 위치결정되는 각 위치를 규정ㅎ아는 복수의 배치데이터를 이용하여 1회의 노광공정을 행하는 제어수단을 구비한 것을 특징으로 하는 노광장치.
제1항에 있어서, 상기 배치데이터는 노광공정에 관한 스텝앤리피트동작에 이용되는 데이터외에, 반도체기판의 구형상얼라인먼트에 관한 계측에 이용되는 데이터 및 반도체기판의 포커스레벨링에 관한 계측에 이용되는 데이터중 적어도 1종류를 포함하며, 상기 제어수단은 상기 구형상 얼라인먼트에 관한 배치데이터 또는 상기 포커스레벨링에 관한 배치데이터에 의해 계측된 얼라인먼트데이터 또는 포커스레벨링데이터를 노광공정에 관한 스텝앤리피트동작용 배치데이터로 보정하여, 노광공정을 행하는 것을 특징으로 하는 노광장치.
1회의 노광공정에 있어서, 반도체기판의 얼라인먼트를 행하고, 반도체기판상의 각 쇼트 위치에 대하여 반도체기판을 스텝앤리피트방식으로 이동시키면서, 원판의 패턴을 각 쇼트 위치에서 반도체기판상에 노광전사하는 노광방법에 있어서, 상기 1회의 노광공정은 스텝앤리피트동작동안에 반도체기판이 위치결정되는 각 위치를 규정하는 복수의 배치데이터를 이용하여 행하는 것을 특징으로 하는 노광장치.
제3항에 있어서, 상기 배치데이터는 노광공정에 관한 스텝앤리피트동작에 이용되는 데이터외에, 반도체기판의 구형상얼라인먼트에 관한 계측에 이용되는 데이터 및 반도체기판의 포커스레벨링에 관한 계측에 이용되는 데이터중 적어도 1종류를 포함하며, 상기 노광공정은 상기 구형상 얼라인먼트에 관한 배치데이터 또는 상기 포커스레벨링에 관한 배치데이터에 의해 계측된 얼라인먼트데이터 또는 포커스레벨링데이터를 노광공정에 관한 스텝앤리피트동작용 배치데이터로 보정하여 행하는 것을 특징으로 하는 노광장치.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950028670A 1994-09-05 1995-09-02 노광장치 및 노광방법 KR0171453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-234479 1994-09-05
JP06234479A JP3100842B2 (ja) 1994-09-05 1994-09-05 半導体露光装置及び露光方法

Publications (2)

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KR960011565A true KR960011565A (ko) 1996-04-20
KR0171453B1 KR0171453B1 (ko) 1999-03-20

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Country Link
US (1) US5734462A (ko)
EP (2) EP1205807B1 (ko)
JP (1) JP3100842B2 (ko)
KR (1) KR0171453B1 (ko)
DE (2) DE69527682T2 (ko)

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JP3884098B2 (ja) * 1996-03-22 2007-02-21 株式会社東芝 露光装置および露光方法
JPH09306811A (ja) * 1996-05-15 1997-11-28 Nikon Corp 露光方法
JPH09320945A (ja) 1996-05-24 1997-12-12 Nikon Corp 露光条件測定方法及び露光装置
US5917580A (en) * 1996-08-29 1999-06-29 Canon Kabushiki Kaisha Scan exposure method and apparatus
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US6455214B1 (en) 1997-03-24 2002-09-24 Nikon Corporation Scanning exposure method detecting focus during relative movement between energy beam and substrate
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JP2000082651A (ja) 1998-09-04 2000-03-21 Nec Corp 走査露光装置及び走査露光方法
JP4434372B2 (ja) * 1999-09-09 2010-03-17 キヤノン株式会社 投影露光装置およびデバイス製造方法
US6704094B2 (en) * 2001-12-11 2004-03-09 Taiwan Semiconductor Manufacturing Co., Ltd Correction of leveling tilt induced by asymmetrical semiconductor patterns
US7274029B2 (en) * 2004-12-28 2007-09-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2013994A (en) * 2014-03-04 2015-11-02 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product.
JP6397265B2 (ja) * 2014-08-20 2018-09-26 キヤノン株式会社 リソグラフィ装置、物品の製造方法、情報処理装置及び決定方法
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法

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Also Published As

Publication number Publication date
EP1205807A1 (en) 2002-05-15
EP0702272B1 (en) 2002-08-07
DE69527682T2 (de) 2003-04-03
KR0171453B1 (ko) 1999-03-20
JPH0878317A (ja) 1996-03-22
DE69536034D1 (de) 2010-02-04
DE69527682D1 (de) 2002-09-12
JP3100842B2 (ja) 2000-10-23
US5734462A (en) 1998-03-31
EP0702272A1 (en) 1996-03-20
EP1205807B1 (en) 2009-12-23

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