TW309648B - - Google Patents

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TW309648B
TW309648B TW085116216A TW85116216A TW309648B TW 309648 B TW309648 B TW 309648B TW 085116216 A TW085116216 A TW 085116216A TW 85116216 A TW85116216 A TW 85116216A TW 309648 B TW309648 B TW 309648B
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sand
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silicon wafer
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TW085116216A
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Hyundai Electronics Ind
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)

Description

309648 A7 B7 五、發明説明（1 ) 經濟部中央揉準局貝工消费合作社印製 <發明之背最> 本發明係為一絕緣flfi上逾佈砂層（Si 1 icon-on-insulator 簡稱SO I)之基板及其製進方法，特別是指一種具平面表面 之SOI基板及其製造方法，且能同時形成隔饑膜及埋入式 涵緣箔曆。 通常，在製進互補式金氧半導臞（CMOS) 11晶败之過程 中，需要大面積之隔雛鼴，以便使裝置間隔雛及防止CMOS 霄晶體栓賊（Latch-up),然而大面積之隔雛匾雄成晶片尺 寸縮小及裝置鳌合（integration)降低之問題。 SOI之技術即是針對上述之問题而提出的，SOI基板之 裝置間完全隔離係因在砂處置基板（handl ins substrate) 及矽裝置基板（dev ice substrate)間埋入一絕緣箱曆之夾 曆，用以防止CMOS霣晶級检鎖及使裝置得以高速搡作。 依據植人_分離法(Separsrtion by implanted oxysen 籣稱SIMOX),依照第1A圓所示，有一摻入預設専電率型雜 質離子之矽晶圓片10 ,含預設能量之氧雛子被植入於矽晶 圓中而形成摻雜質區U。 依照第1B_所示，施行退火韌化马 中形成埋入式絕緣箔靥11A, 緣箔層11A上形成砂箔靥10A ;接著，Μ熱氣化作用在砂萡 層10Α上形成氧化益12,而且以化學蒸汽沉積法在氧化發12 上沉積一氣化砂萡層13 ;然後，氧化塑12及摁化矽箔曆13 被製成型樣，Μ使矽箔曆10Α之隔離區F露出。 依照第1C圓所示，施行熟氧化作用，在隔離區F露出之 =退火韌化程序以便在矽晶蹰10 ,且在装置欲形^8之埋入式絕 —3 - 本紙張尺度逋用中國國家揉準（CNS ) Α4规格（210Χ297公釐） (請先聞讀背面之注意事項先填寫本頁) .裝. 訂 旅 經濟部中央揉準局員工消费合作社印製 A7 __B7_ 五、發明説明（2 ) 矽萡靥10AJ^成壜氣化物14,即Μ埸氣化物14界定一動作區 域Μ ,因此製成SOI基板200 ,該基板包括：砂晶圓Η10、 矽箔雇10Α、在砂晶圓Η10及砂箔曆10Α之間形成埋入式絕 緣滔層11Α、隔離用之埸氧化物14 〇 使用SIM0X及L0C0S習用法之缺點在於製埴SOI基板之 時間長，因為需要長氧化作角程序，以便形成埋入式絕緣 箱曆11AR埸氧化物14 ,此外，因為用以界定動作區域AA之 場氧化物14係以L0C0S程序製成，此製造程序異常複雜•而 且，因為SOI基板200由於埸氧化物而形成一佈鳥，需分別 附加平面化程序，Μ獲得具平面表面之S0I基板。 <發明之總論:> 本發明之目的在提供一種S0I基板之製造方法，並同時 形成埋入式萡暦及隔離膜。 本發明之另一目的在提供一種S0I基板製造方法之簡 化程序〇 本發明之又一目的在提供一種具平面表面之S0I基板。 依據本發明之一實例所示，提供一種S0I晶圓之製造方 法，包括下列步驟：在矽晶圓Η之隔雛區域上形成一保護 性箔層，使砂晶圓片之動作區域露出；在矽晶圓片内植入 氧離子，使矽晶圓片內部形成離子植入區；將矽晶圓片退 火化，使動作區域內形成砂箔層，及在砂晶圓Η内形成 埋入式絕緣萡曆，Μ埋入式涵緣箔曆隔離矽箔曆與矽晶圓 Η,此埋入式絕緣萡靥與砂箔曆為共平面。 在實例中，形成保護性萡靥之步驟包括：在砂晶圓片 -4 - 本紙張尺度適用中國國家梯準（CNS ) A4規格（210X297公廣) --:---1---^--裝-- (請先閱讀背面之注$項一iji ‘%本頁) 、tr' 線 經濟部中央梂準局員工消费合作社印簟 309648 五、發明説明（3 ) 上塗佈光敏樹脂；將光敏樹脂曝光及顯膨，而在矽晶圓Μ 之隔離區域上形成保鼸性箔曆。前述保護性箔層之光敏樹 胞為polymide或抗光蝕樹脂。 另外一種形成保鼸性箔層之步騸包括》在矽晶_片上 形成與矽晶圓片有不同蝕刻率之萡/Sf ;抗光蝕膜被製成型 樣，使動作庙域之箔暦露出；使用抗光鈾膜作為遮蔽雇， 蝕刻箔曆，而在砂晶圓片之隔雛區上形成保嫌性箱曆；移 除抗光蝕膜型樣；保嫌性箔層之箔靥為自旋玻璃。 在實例中，被植入之氧離子含有足夠能量，以穿通前 述保護性箔曆，劑量為5X10/7 - 7xl0/<r離子。 在實例中，保嫌性萡曆之厚度ΗΜ下述公式表示： H = dH-l/2 ♦ d2
I 其中dl為氣離子之離子植入深度，d2為離子植入區之 厚度。 在實例中，施行砂晶圓片退火細化步驟之溫度為1100 一1300°C ,時間為2-7小時。 本發明亦在提供S01基板，包括：隔離矗及動作區已被 界定之矽晶圓片；在矽晶圓Η之動作區内形成矽萡雇；在 矽晶圓片中形成涵嫌箔曆，作為矽萡靥與矽晶圓片隔離用 ，絕緣箔曆與砂箔雇為共平面。 在實例中之埋入式絕緣箔曆之涵緣箔曆此絕緣箔雇 ，其形成於矽晶圓片之隔離區中，並與矽箔靥為共平面之 部分，作為SOI基板之堝氣化物；其形成於矽晶圓Η之動作 區中之部分，作為SOI基板之埋入式絕緣箔曆。 -5 本纸張尺度適用中國國家揉準（CNS ) Α4现格（210X297公釐） |_„---：----^--裝-- (請先閱讀背面之注$項一ίί.寫本頁) 訂 線 經濟部中央梂準局員工消费合 A7 B7 五、發明说明（4) <圖式之簡單說明> 本發明之目的及特徵可參考下列詳细描述、附加之申 請專利範BS及附圖較更易於瞭解，其中： 第1A至1C圃為習用SOI基板製造程序之簡化剖面圆。 第2画為依照本發明實例301基板之籣化剖面圓。 第3A至3C_為依照本發明實例之製造SOI基板製造程 序之簡化剖面圆。 <較佳具級實施例之詳细描述> 如第2圆所示，依照本發明之資例，已被界定動作區 AA及場區域F之SOI基板100 ,包括：支援SOI基板100之砂晶 圓片1及在矽晶圓片1之上形成之砂箱曆1A ,此為躲置形成 之處；及作為隔雛矽箔層1A與矽晶圓1之埋入式絕緣箔曆3A ;砂活曆1A形成於SOI基板100之動作區AA。 在矽晶圓片1上，由氣化箔曆製成之埋入式絕緣箔曆3A 形成包圃矽箔曆1A ,因此而使矽箔曆1A與砂晶圓片1隔離； 埋入式絕緣萡曆3A ,其在隔離區F中之部分，作為隔離用之 場氧化物；其在動作區Μ中介於矽箔曆1A與矽晶圓片1間 夾層之部分，作為S0I基板100之埋入式絕緣萡層；其中， 砂箔臢：^之深度為0.08-〇.3/^;在隔雛區「中，作為場氧 化物之埋入式备目緣箱曆3A之厚度為0.07-0.45 // m。 第2画之S0I基板100之製造方法如下所示，如第3A圖 所示，在摻入雜質或無摻入雜質之矽晶圓片1表面上，形成 一預設厚度之保護性箔層2 ,其中，保護性箔靥2係由抗光 g由3¾聚亞趣胺（p〇ly imide)樹脂所製成；另外，保護性箔層 一 6 — 【用中國國家橾準（CNS ) A4規格（210X297公釐） !——Γ---：——疼------ΐτ------終 (請先W讀背面之注項ί\寫本瓦) 、 經濟部中央揉準局員工消费合作社印製 909648 A7 B7 五、發明说明（5 ) 2可能為與砂晶圓片1不同触刻率之材料，例如：自旋玻班 (SOG);保嫌性箔餍2被製成型樣並留在砂晶圓片1之隔離 區F上。 此時，若保護性箔曆2包括抗光蝕樹脂時，保嫌性箔靥 2以曝光及顧膨程序被製成型樣；另外.保護性箔曆2包括 與矽晶圓片1不同蝕刻率之材料時，例如：自旋玻璃，抗光 蝕型搛Μ習用平版印刷程序形成於保護性箔曆2上，然後使 用抗光蝕型樣作為遮蔽靥，將保嫌性箔曆2製成型樣。 如第38圈所示，具預設能最之氧雛子被植入砂晶圆片 1中，保鼸性箔層2之厚度Η依氣離子植入程序而定，其公式 如下所示： H*dl+d2/2 其中dl為氧離子植入砂晶圓片1之深度，d2為氧_子植 入矽晶園片1之區域3之厚度，此為氧艫子植入處，此時， 若植入深度dl為0.08-0.3“ m ,植入區域之厚度d2為0.07-0.5Wm ,貝U保護性箔雇2之厚度為0.1-0.6//m。 氧離子植入矽晶圓片1中之劑JI為5X10/7 —7X10^ 離子/cm2,且具有足夠能最穿越保護性箔靥2 ;氣雛子植入 砂晶圓片1中，定位於砂晶圓片1表面下之絕緣區F中；另外 ，在動作區AA中，植入之氣離子定位於矽晶圓片1深度0.08 -0.3« m内；如上所示，氧離子植入砂晶腯片1之深度dl依 保謹性萡曆2之厚度Η而定。 如第3C圆所示，在溫度1100-1300°C時，施行砂晶圓片 1退火韌化程序2-7小時，Μ形成作為絕緣箔曆之埋入式絕 -7 - 本紙張尺度逋用中國國家梯準（CNS ) Α4坑格（210X297公釐） --^---r---^--裝-- (請先《讀背面之注$項一^ ‘寫本筲) 訂 線 五、發明説明（6 A7 B7 錄萡曆3A ,並形成矽箔曆1A ,即嫉置形成處，以埋入式絕 緣箔厢^3站@離矽箔靥1 A與矽晶_片1,對於埋入式絕緣箔曆 3A·其在隔離區F中之部分作為隔離用之埸氣化物；其在動 作匾AA之部分作為SOI基板100之埋入式絕嫌箔曆。 其中，埋入式絕緣箔層3A僅形成於矽晶圓片1之中，使 得製於矽晶圓片1表面之埋入式絕緣箔曆3A郤分不存在〇 然後，移除保嫌性萡曆2 , Μ獾得具平面表面之SOI基 * 板100,SOI基板包括：砂晶圓片1、砂絕緣曆1 A、形成於矽 晶圓片1及矽絕緣層1A間之埋入式絕緣萡靥3A,保謹性箔曆 2可於退火靭化程序之前或之後移除。 依據本發明，除SOI基板之絕緣暦外，埋入式絕緣箔曆 作為場氧化物，以氣離子植入程序及退火韌化程序所形成 ;據此，簡化製埴程序、減少程序時間、獾得具平面表面 之SOI基板〇 雖以參考賨例加y描述本發明.然而此說明並不欲被 視為一種範圃界限；除本發明之其他實例外，専業人貝可 參考本說明而瞭解所舉證實例之各種修改，因此申請專利 範園將涵蓋任何此種修改或本發明實際範画之實例。 請 先 閱 it 之 注 頁 裝 訂 線 經濟部中央樣準局負工消费合作社印掣 8 本紙佚尺度通用中國國家樣準（CNS ) A4规格（210X297公釐）

Claims (1)

  1. A8 B8 C8 D8 經濟部中央標準局負工消费合作社印製 穴、申請專利範固 1. 一種soi基板之製進方法，包括下列步驟： 在矽晶圓片之隔離區上形成保嫌性箔曆，Μ露出前述矽 晶圓片之動作區； 在前述砂晶圓片中植入氧離子，以便在前述矽晶圓片中 形成離子植入區； 將前述砂晶圓片退火朗化，使前述動作區域内形成砂箔 曆及在前述砂晶圃片內形成埋入式絕緣箔層，前述矽箔 曆與砂晶圓片以埋入式絕緣箔曆隔離，此埋入式絕緣箔 曆與前述砂箔曆為共平面。 2. 如申請專利範園第1項之方法，其中形成所述保護性箔 曆之步驟為： 在所述砂晶圓Ν上塗佈光敏樹脂ί 將所述光敏樹脂曝光及顯影，而在前述砂晶圓片之隔離 區域上形成前述保護性箔曆。 3. 如申請專利範園第2項之方法，其中前述保護性萡層之 光敏樹脂為聚亞豳胺（poly imide)樹脂者。 4. 如申請專利範園第2項之方法，其中前述保護性箔層之 光敏樹脂為抗光蝕樹脂。 5. 如申誧專利範園第1項之方法，其中形成前述保護性萡 層之步驟包括： 在前述矽晶圓片上形成與矽晶圓片有不同蝕刻率之范層。 在前述萡層上塗佈抗光蝕膜〇 將前述抗光蝕膜製成型樣，使前述動作區域之箔曆露出。 使用前述抗光蝕膜作為遮蔽雇，蝕刻所述箔曆，而在前 一 9 一 (請先閲讀背面之注f 寫本頁) -裝- 訂 線 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） 經濟部中央標準局負工消费合作社印製 Α8 Β8 C8 D8 κ、申請專利範囷 述砂晶aD片之隔離函上形成保HI性泪曆。 移除前述抗光蝕膜型櫬。 6. 如申誚專利範園第5項之方法，其中所述保驩性箱曆之 絕嫌箔曆為自旋玻瑀。 7. 如申諝專利範圓第1項之方法，其中所述氧雛子植入矽 晶圓片1中之劑量為5 X 1# - 7 X 10^擁子〇 8·如申睛專利範圓第1項之方法，其中所述被植入之氧離 子含有足夠能量，以穿過前述保護性箔靥〇 9·如申餹專利範圓第1項之方法，其中所述保護性箔層之 厚度HM下述公式表示： H = dlH-l/2 * d2 其中dl為氧雛子之離子植入深度，〇ί2為齄子植入區之厚 度0 10. 如申謫專利範園第9項之方法，其中氣雛子在所述動 作區之離子植入深度為0.08-0.3 « m 〇 11. 如申請專利範困第9項之方法，其中所述雛子植入區 域之厚度為0.07-0.5以m 〇 12. 如申請專利範圍第9項之方法，其中所述保護性箔層 之厚度為0.1-0.6 « m。 13. 如申諝專利範圃第1項之方法，其中所述施行砂晶圓 片退火勘化步驟之溫度為1100-1300°C ,時間為2-7小時。 14. 一種SOI基板，包括： 隔離區及動作區已界定之矽晶圓Μ; 在前述矽晶圓片之動作區内形成矽萡曆； -10 - 本紙張尺度適用中國國家標準（CNS ) Α4规格（210X297公釐） IK——r-----^II (請先W讀背面之注意事項ί 寫本頁) ----訂 線 A8 B8 C8 D8 309648 夂、申請專利範困 在前述矽晶圓片中形成涵緣箔曆，作為所逑矽箔曆與矽 晶圆Η隔離用， 絕緣箔靥與砂箔曆為共平面〇 15. 如申請專利範園第14項之SOI基板，其中所述氣化箔曆 為埋入式絕緣萡層。 16. 如申請專利範園第14項之SOI基板，其中所述絕緣箔層 ，其形成於前述砂晶圓片之搞離區且與所述砂搭曆共平 面之部分，作為所述SOI基板之埸氧化物。 17. 如申諝專利範園第14項之SOI基板，其中所述纟適緣箔曆 ，其形成於所述矽晶圓片之動作區之部分，作為所述SOI 基板之埋入式絕緣箔曆。 18. 如申謫專利範園第17項之SO I基板，其中所述絕嫌箔曆 形成於動作區之部分，厚度為0.07-0.45 wm。 19. 如申請專利範園第14項之SOI基板，其中所述砂箔曆之 ^^0.08*0.3 // πι ° |_„---1-----^------#------痒 (請先S讀背面之注$項一寫本頁) 〈 經濟部中央揉準局貞工消费合作社印装 -11 - 本紙張尺度逋用中國國家梂率（CNS ) Α4规格（210X297公釐）
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GB9627000D0 (en) 1997-02-12
GB2309587A (en) 1997-07-30
CN1180238A (zh) 1998-04-29
GB2309587B (en) 2000-07-05
CN1084524C (zh) 2002-05-08
JPH1012850A (ja) 1998-01-16
KR970052022A (ko) 1997-07-29
DE19654697A1 (de) 1997-07-03

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