GB9627000D0 - Silicon-on-insulator substrate and method fabricating the same - Google Patents

Silicon-on-insulator substrate and method fabricating the same

Info

Publication number
GB9627000D0
GB9627000D0 GBGB9627000.4A GB9627000A GB9627000D0 GB 9627000 D0 GB9627000 D0 GB 9627000D0 GB 9627000 A GB9627000 A GB 9627000A GB 9627000 D0 GB9627000 D0 GB 9627000D0
Authority
GB
United Kingdom
Prior art keywords
silicon
same
insulator substrate
method fabricating
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9627000.4A
Other versions
GB2309587B (en
GB2309587A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9627000D0 publication Critical patent/GB9627000D0/en
Publication of GB2309587A publication Critical patent/GB2309587A/en
Application granted granted Critical
Publication of GB2309587B publication Critical patent/GB2309587B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
GB9627000A 1995-12-30 1996-12-27 Silicon-on-insulator substrate and method fabricating the same Expired - Fee Related GB2309587B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069460A KR970052022A (en) 1995-12-30 1995-12-30 SOH eye substrate manufacturing method

Publications (3)

Publication Number Publication Date
GB9627000D0 true GB9627000D0 (en) 1997-02-12
GB2309587A GB2309587A (en) 1997-07-30
GB2309587B GB2309587B (en) 2000-07-05

Family

ID=19448458

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9627000A Expired - Fee Related GB2309587B (en) 1995-12-30 1996-12-27 Silicon-on-insulator substrate and method fabricating the same

Country Status (6)

Country Link
JP (1) JPH1012850A (en)
KR (1) KR970052022A (en)
CN (1) CN1084524C (en)
DE (1) DE19654697A1 (en)
GB (1) GB2309587B (en)
TW (1) TW309648B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204452A (en) 1998-01-13 1999-07-30 Mitsubishi Electric Corp Semiconductor substrate and method for treatment thereof
KR100366923B1 (en) * 2001-02-19 2003-01-06 삼성전자 주식회사 SOI Substrate and Method of Manufacturing Thereof
US6737332B1 (en) * 2002-03-28 2004-05-18 Advanced Micro Devices, Inc. Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same
EP1993127B1 (en) 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US8119490B2 (en) * 2008-02-04 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745947A (en) * 1980-09-03 1982-03-16 Toshiba Corp Mos type semiconductor integrated circuit
GB2183905B (en) * 1985-11-18 1989-10-04 Plessey Co Plc Method of semiconductor device manufacture
JPS6423529A (en) * 1987-07-20 1989-01-26 Fuji Electric Co Ltd Manufacture of semiconductor device
NL8703039A (en) * 1987-12-16 1989-07-17 Philips Nv PROCESS FOR PATTERNALLY MANUFACTURING A THIN LAYER FROM OXIDIC SUPER CONDUCTIVE MATERIAL
JPH03201535A (en) * 1989-12-28 1991-09-03 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPH042120A (en) * 1990-04-18 1992-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0467649A (en) * 1990-07-09 1992-03-03 Fujitsu Ltd Manufacture of semiconductor device
JPH0775244B2 (en) * 1990-11-16 1995-08-09 信越半導体株式会社 Dielectric isolation substrate and manufacturing method thereof
JPH04297055A (en) * 1991-03-26 1992-10-21 Sharp Corp Manufacture of semiconductor device
EP0525256A1 (en) * 1991-07-25 1993-02-03 Motorola, Inc. Method of fabricating isolated device regions
US5270265A (en) * 1992-09-01 1993-12-14 Harris Corporation Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure
JPH06268054A (en) * 1993-03-10 1994-09-22 Nippondenso Co Ltd Semiconductor device
JPH0745713A (en) * 1993-07-29 1995-02-14 Kawasaki Steel Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
CN1084524C (en) 2002-05-08
DE19654697A1 (en) 1997-07-03
JPH1012850A (en) 1998-01-16
GB2309587B (en) 2000-07-05
TW309648B (en) 1997-07-01
KR970052022A (en) 1997-07-29
CN1180238A (en) 1998-04-29
GB2309587A (en) 1997-07-30

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20061227