TW302544B - - Google Patents

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Publication number
TW302544B
TW302544B TW085109291A TW85109291A TW302544B TW 302544 B TW302544 B TW 302544B TW 085109291 A TW085109291 A TW 085109291A TW 85109291 A TW85109291 A TW 85109291A TW 302544 B TW302544 B TW 302544B
Authority
TW
Taiwan
Prior art keywords
insulating film
redundant
conductor
film
cavity
Prior art date
Application number
TW085109291A
Other languages
English (en)
Chinese (zh)
Original Assignee
Matsushita Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Co Ltd filed Critical Matsushita Electron Co Ltd
Application granted granted Critical
Publication of TW302544B publication Critical patent/TW302544B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW085109291A 1995-08-07 1996-07-30 TW302544B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7201017A JPH0951038A (ja) 1995-08-07 1995-08-07 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW302544B true TW302544B (enExample) 1997-04-11

Family

ID=16434097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085109291A TW302544B (enExample) 1995-08-07 1996-07-30

Country Status (4)

Country Link
US (1) US5891762A (enExample)
JP (1) JPH0951038A (enExample)
KR (1) KR100235585B1 (enExample)
TW (1) TW302544B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755243B2 (ja) * 1996-01-23 1998-05-20 日本電気株式会社 半導体記憶装置およびその製造方法
US6054340A (en) * 1997-06-06 2000-04-25 Motorola, Inc. Method for forming a cavity capable of accessing deep fuse structures and device containing the same
JP4363679B2 (ja) * 1997-06-27 2009-11-11 聯華電子股▲ふん▼有限公司 半導体装置の製造方法
TW412845B (en) 1997-10-13 2000-11-21 Fujitsu Ltd Semiconductor device having a fuse and a fabrication process thereof
KR100265596B1 (ko) * 1997-10-27 2000-10-02 김영환 반도체 소자의 제조방법
US6121073A (en) * 1998-02-17 2000-09-19 Taiwan Semiconductor Manufacturing Company Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TW442923B (en) * 1998-03-20 2001-06-23 Nanya Technology Corp Manufacturing method of DRAM comprising redundancy circuit region
JP4322330B2 (ja) * 1998-09-04 2009-08-26 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP3178438B2 (ja) 1998-11-20 2001-06-18 日本電気株式会社 半導体装置及びその製造方法
KR100359163B1 (ko) 1999-12-31 2002-10-31 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
KR100357302B1 (ko) * 1999-12-31 2002-10-19 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6372652B1 (en) 2000-01-31 2002-04-16 Chartered Semiconductor Manufacturing Ltd. Method for forming a thin-film, electrically blowable fuse with a reproducible blowing wattage
JP2001284458A (ja) 2000-03-31 2001-10-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6838367B1 (en) * 2000-08-24 2005-01-04 Micron Technology, Inc. Method for simultaneous formation of fuse and capacitor plate and resulting structure
JP3445965B2 (ja) 2000-08-24 2003-09-16 松下電器産業株式会社 半導体装置およびその製造方法
JP2003060036A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7477130B2 (en) * 2005-01-28 2009-01-13 Littelfuse, Inc. Dual fuse link thin film fuse
EP1717863B1 (en) * 2005-04-28 2011-11-02 Ixys Corporation Semiconductor power device with passivation layers
US8907718B2 (en) 2009-03-04 2014-12-09 Sensortechnics GmbH Passive resistive-heater addressing network

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065545A (ja) * 1983-09-21 1985-04-15 Hitachi Micro Comput Eng Ltd 半導体装置の製造方法
JP2756786B2 (ja) * 1987-08-21 1998-05-25 オンキヨー株式会社 タイマー装置
JPS6480038A (en) * 1987-09-19 1989-03-24 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPH01169943A (ja) * 1987-12-24 1989-07-05 Fujitsu Ltd 半導体記憶装置
JPH0485948A (ja) * 1990-07-27 1992-03-18 Hitachi Ltd 半導体集積回路装置
JP3255524B2 (ja) * 1993-12-28 2002-02-12 三菱電機株式会社 冗長回路を有する半導体装置およびその製造方法
US5618750A (en) * 1995-04-13 1997-04-08 Texas Instruments Incorporated Method of making fuse with non-corrosive termination of corrosive fuse material

Also Published As

Publication number Publication date
US5891762A (en) 1999-04-06
JPH0951038A (ja) 1997-02-18
KR970013367A (ko) 1997-03-29
KR100235585B1 (ko) 1999-12-15

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