JPS6480038A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS6480038A JPS6480038A JP62235907A JP23590787A JPS6480038A JP S6480038 A JPS6480038 A JP S6480038A JP 62235907 A JP62235907 A JP 62235907A JP 23590787 A JP23590787 A JP 23590787A JP S6480038 A JPS6480038 A JP S6480038A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- redundant fuse
- passivation film
- manufacture
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
PURPOSE:To prevent the production of a faulty redundant fuse, by protecting the redundant fuse with an etching-stopper layer when an opening is formed at a passivation film. CONSTITUTION:An etching-stopper layer 8 is formed at a redundant fuse F as well as at the upper layer of its fuse and a passivation film 24 is formed at the whole surface of a substrate including the upper part of the redundant fuse F by making the etching-stopper layer 8 interpose. And an opening 24A is formed by removing the passivation film 24 at the upper part of the redundant fuse F selectively by etching. In this way, as the redundant fuse F can be protected by the etching-stopper layer 8 when the opening part 24A is formed at the passivation film 24, this approach prevents the production of a faulty redundant fuse.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235907A JPS6480038A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62235907A JPS6480038A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6480038A true JPS6480038A (en) | 1989-03-24 |
Family
ID=16993004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62235907A Pending JPS6480038A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6480038A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452243U (en) * | 1987-09-28 | 1989-03-31 | ||
US5242851A (en) * | 1991-07-16 | 1993-09-07 | Samsung Semiconductor, Inc. | Programmable interconnect device and method of manufacturing same |
JPH06104397A (en) * | 1992-04-17 | 1994-04-15 | Hyundai Electron Ind Co Ltd | Dynamic random-access memory cell and its manufacture |
JPH06216255A (en) * | 1992-12-17 | 1994-08-05 | Samsung Electron Co Ltd | Wafer inspection of semiconductor device with redundancy circuit |
KR100232976B1 (en) * | 1995-11-30 | 1999-12-01 | 다니구찌 이찌로오 | Semiconductor device fabrication method |
KR100235585B1 (en) * | 1995-08-07 | 1999-12-15 | 모리 가즈히로 | Semiconductor fabrication method |
EP0981161A2 (en) * | 1998-06-26 | 2000-02-23 | International Business Machines Corporation | Semiconductor structure including a conductive fuse and process for fabrication thereof |
JP2000150655A (en) * | 1998-11-05 | 2000-05-30 | Siemens Ag | Fuse structure and production thereof |
JP2003051542A (en) * | 2001-08-08 | 2003-02-21 | Sony Corp | Semiconductor device and production method therefor |
-
1987
- 1987-09-19 JP JP62235907A patent/JPS6480038A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452243U (en) * | 1987-09-28 | 1989-03-31 | ||
US5242851A (en) * | 1991-07-16 | 1993-09-07 | Samsung Semiconductor, Inc. | Programmable interconnect device and method of manufacturing same |
JPH06104397A (en) * | 1992-04-17 | 1994-04-15 | Hyundai Electron Ind Co Ltd | Dynamic random-access memory cell and its manufacture |
JPH06216255A (en) * | 1992-12-17 | 1994-08-05 | Samsung Electron Co Ltd | Wafer inspection of semiconductor device with redundancy circuit |
KR100235585B1 (en) * | 1995-08-07 | 1999-12-15 | 모리 가즈히로 | Semiconductor fabrication method |
KR100232976B1 (en) * | 1995-11-30 | 1999-12-01 | 다니구찌 이찌로오 | Semiconductor device fabrication method |
EP0981161A2 (en) * | 1998-06-26 | 2000-02-23 | International Business Machines Corporation | Semiconductor structure including a conductive fuse and process for fabrication thereof |
EP0981161A3 (en) * | 1998-06-26 | 2002-06-12 | International Business Machines Corporation | Semiconductor structure including a conductive fuse and process for fabrication thereof |
JP2000150655A (en) * | 1998-11-05 | 2000-05-30 | Siemens Ag | Fuse structure and production thereof |
JP2003051542A (en) * | 2001-08-08 | 2003-02-21 | Sony Corp | Semiconductor device and production method therefor |
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