KR100235585B1 - 반도체장치 및 제조방법 - Google Patents

반도체장치 및 제조방법 Download PDF

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Publication number
KR100235585B1
KR100235585B1 KR1019960032832A KR19960032832A KR100235585B1 KR 100235585 B1 KR100235585 B1 KR 100235585B1 KR 1019960032832 A KR1019960032832 A KR 1019960032832A KR 19960032832 A KR19960032832 A KR 19960032832A KR 100235585 B1 KR100235585 B1 KR 100235585B1
Authority
KR
South Korea
Prior art keywords
insulating film
memory cell
forming
film
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960032832A
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English (en)
Korean (ko)
Other versions
KR970013367A (ko
Inventor
히로유키 사카이
아쓰히로 가지야
히사시 오가와
Original Assignee
모리 가즈히로
마츠시다 덴시 고교 가부시키가이샤
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Publication date
Application filed by 모리 가즈히로, 마츠시다 덴시 고교 가부시키가이샤 filed Critical 모리 가즈히로
Publication of KR970013367A publication Critical patent/KR970013367A/ko
Application granted granted Critical
Publication of KR100235585B1 publication Critical patent/KR100235585B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019960032832A 1995-08-07 1996-08-07 반도체장치 및 제조방법 Expired - Fee Related KR100235585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP95-201017 1995-08-07
JP7201017A JPH0951038A (ja) 1995-08-07 1995-08-07 半導体装置およびその製造方法
JP95201017 1995-08-07

Publications (2)

Publication Number Publication Date
KR970013367A KR970013367A (ko) 1997-03-29
KR100235585B1 true KR100235585B1 (ko) 1999-12-15

Family

ID=16434097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960032832A Expired - Fee Related KR100235585B1 (ko) 1995-08-07 1996-08-07 반도체장치 및 제조방법

Country Status (4)

Country Link
US (1) US5891762A (enExample)
JP (1) JPH0951038A (enExample)
KR (1) KR100235585B1 (enExample)
TW (1) TW302544B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2755243B2 (ja) * 1996-01-23 1998-05-20 日本電気株式会社 半導体記憶装置およびその製造方法
US6054340A (en) * 1997-06-06 2000-04-25 Motorola, Inc. Method for forming a cavity capable of accessing deep fuse structures and device containing the same
JP4363679B2 (ja) * 1997-06-27 2009-11-11 聯華電子股▲ふん▼有限公司 半導体装置の製造方法
TW412845B (en) 1997-10-13 2000-11-21 Fujitsu Ltd Semiconductor device having a fuse and a fabrication process thereof
KR100265596B1 (ko) * 1997-10-27 2000-10-02 김영환 반도체 소자의 제조방법
US6121073A (en) * 1998-02-17 2000-09-19 Taiwan Semiconductor Manufacturing Company Method for making a fuse structure for improved repaired yields on semiconductor memory devices
TW442923B (en) * 1998-03-20 2001-06-23 Nanya Technology Corp Manufacturing method of DRAM comprising redundancy circuit region
JP4322330B2 (ja) * 1998-09-04 2009-08-26 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP3178438B2 (ja) 1998-11-20 2001-06-18 日本電気株式会社 半導体装置及びその製造方法
KR100359163B1 (ko) 1999-12-31 2002-10-31 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
KR100357302B1 (ko) * 1999-12-31 2002-10-19 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6372652B1 (en) 2000-01-31 2002-04-16 Chartered Semiconductor Manufacturing Ltd. Method for forming a thin-film, electrically blowable fuse with a reproducible blowing wattage
JP2001284458A (ja) 2000-03-31 2001-10-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6838367B1 (en) * 2000-08-24 2005-01-04 Micron Technology, Inc. Method for simultaneous formation of fuse and capacitor plate and resulting structure
JP3445965B2 (ja) 2000-08-24 2003-09-16 松下電器産業株式会社 半導体装置およびその製造方法
JP2003060036A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7477130B2 (en) * 2005-01-28 2009-01-13 Littelfuse, Inc. Dual fuse link thin film fuse
EP1717863B1 (en) * 2005-04-28 2011-11-02 Ixys Corporation Semiconductor power device with passivation layers
US8907718B2 (en) 2009-03-04 2014-12-09 Sensortechnics GmbH Passive resistive-heater addressing network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480038A (en) * 1987-09-19 1989-03-24 Hitachi Ltd Manufacture of semiconductor integrated circuit device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6065545A (ja) * 1983-09-21 1985-04-15 Hitachi Micro Comput Eng Ltd 半導体装置の製造方法
JP2756786B2 (ja) * 1987-08-21 1998-05-25 オンキヨー株式会社 タイマー装置
JPH01169943A (ja) * 1987-12-24 1989-07-05 Fujitsu Ltd 半導体記憶装置
JPH0485948A (ja) * 1990-07-27 1992-03-18 Hitachi Ltd 半導体集積回路装置
JP3255524B2 (ja) * 1993-12-28 2002-02-12 三菱電機株式会社 冗長回路を有する半導体装置およびその製造方法
US5618750A (en) * 1995-04-13 1997-04-08 Texas Instruments Incorporated Method of making fuse with non-corrosive termination of corrosive fuse material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480038A (en) * 1987-09-19 1989-03-24 Hitachi Ltd Manufacture of semiconductor integrated circuit device

Also Published As

Publication number Publication date
US5891762A (en) 1999-04-06
JPH0951038A (ja) 1997-02-18
KR970013367A (ko) 1997-03-29
TW302544B (enExample) 1997-04-11

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