TW315510B - - Google Patents
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- Publication number
- TW315510B TW315510B TW085115850A TW85115850A TW315510B TW 315510 B TW315510 B TW 315510B TW 085115850 A TW085115850 A TW 085115850A TW 85115850 A TW85115850 A TW 85115850A TW 315510 B TW315510 B TW 315510B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive layer
- impurity concentration
- film
- capacitor
- layer
- Prior art date
Links
- 239000012535 impurity Substances 0.000 claims description 95
- 239000010408 film Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000003990 capacitor Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 37
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 146
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008859 change Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 208000027418 Wounds and injury Diseases 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000002079 cooperative effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 210000003625 skull Anatomy 0.000 description 2
- ZVNPWFOVUDMGRP-UHFFFAOYSA-N 4-methylaminophenol sulfate Chemical compound OS(O)(=O)=O.CNC1=CC=C(O)C=C1.CNC1=CC=C(O)C=C1 ZVNPWFOVUDMGRP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19950057175 | 1995-12-26 | ||
| KR19960010787 | 1996-04-10 | ||
| KR1019960018524A KR100195216B1 (ko) | 1995-12-26 | 1996-05-29 | 반도체 메모리 장치의 커패시터 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW315510B true TW315510B (enExample) | 1997-09-11 |
Family
ID=27349270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085115850A TW315510B (enExample) | 1995-12-26 | 1996-12-21 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3604849B2 (enExample) |
| TW (1) | TW315510B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW385544B (en) * | 1998-03-02 | 2000-03-21 | Samsung Electronics Co Ltd | Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby |
| KR100299594B1 (ko) * | 1998-07-13 | 2001-09-22 | 윤종용 | 디램 장치의 제조 방법 |
| JP2001267527A (ja) | 2000-03-15 | 2001-09-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
1996
- 1996-12-21 TW TW085115850A patent/TW315510B/zh not_active IP Right Cessation
- 1996-12-26 JP JP34864896A patent/JP3604849B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3604849B2 (ja) | 2004-12-22 |
| JPH09186302A (ja) | 1997-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |