JP3604849B2 - 半導体メモリ装置のキャパシタ及びその製造方法 - Google Patents

半導体メモリ装置のキャパシタ及びその製造方法 Download PDF

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Publication number
JP3604849B2
JP3604849B2 JP34864896A JP34864896A JP3604849B2 JP 3604849 B2 JP3604849 B2 JP 3604849B2 JP 34864896 A JP34864896 A JP 34864896A JP 34864896 A JP34864896 A JP 34864896A JP 3604849 B2 JP3604849 B2 JP 3604849B2
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Japan
Prior art keywords
conductive layer
concentration
capacitor
lower electrode
forming
Prior art date
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Expired - Fee Related
Application number
JP34864896A
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English (en)
Japanese (ja)
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JPH09186302A (ja
Inventor
朴泳旭
金榮善
南昇煕
沈世鎭
柳次英
▲呉▼寛泳
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1019960018524A external-priority patent/KR100195216B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH09186302A publication Critical patent/JPH09186302A/ja
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Publication of JP3604849B2 publication Critical patent/JP3604849B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
JP34864896A 1995-12-26 1996-12-26 半導体メモリ装置のキャパシタ及びその製造方法 Expired - Fee Related JP3604849B2 (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR19950057175 1995-12-26
KR19960010787 1996-04-10
KR96-10787 1996-04-10
KR96-18524 1996-05-29
KR95-57175 1996-05-29
KR1019960018524A KR100195216B1 (ko) 1995-12-26 1996-05-29 반도체 메모리 장치의 커패시터 및 그 제조 방법

Publications (2)

Publication Number Publication Date
JPH09186302A JPH09186302A (ja) 1997-07-15
JP3604849B2 true JP3604849B2 (ja) 2004-12-22

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Application Number Title Priority Date Filing Date
JP34864896A Expired - Fee Related JP3604849B2 (ja) 1995-12-26 1996-12-26 半導体メモリ装置のキャパシタ及びその製造方法

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JP (1) JP3604849B2 (enExample)
TW (1) TW315510B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW385544B (en) * 1998-03-02 2000-03-21 Samsung Electronics Co Ltd Apparatus for manufacturing semiconductor device, and method of manufacturing capacitor of semiconductor device thereby
KR100299594B1 (ko) * 1998-07-13 2001-09-22 윤종용 디램 장치의 제조 방법
JP2001267527A (ja) 2000-03-15 2001-09-28 Fujitsu Ltd 半導体装置及びその製造方法

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Publication number Publication date
TW315510B (enExample) 1997-09-11
JPH09186302A (ja) 1997-07-15

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