JP2007324490A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】ホールを形成する位置に、酸素や水素プラズマのみでエッチングが可能なペデスタル141を予め形成しておき、その上に層間絶縁膜142を形成する。ペデスタル上の層間絶縁膜をフッ素含有プラズマでエッチングしてホール147aを形成しペデスタルの表面を露出させる。その後、酸素プラズマを用いてペデスタルをエッチングする。ペデスタルには非晶質カーボン膜や有機塗布膜を用いることができる。
【選択図】図2
Description
また、トランジスタのドレイン108及び112に接続するように、層間絶縁膜113の所定の領域にコンタクトプラグ117が設けられ、さらにコンタクトプラグ117に接続するように、層間絶縁膜118の所定の領域に容量コンタクトホール119を設け、容量コンタクトプラグ120が設けられている。容量コンタクトプラグ120および層間絶縁膜118の上に窒化シリコン膜121および層間絶縁膜122が設けられる。
下記特許文献1乃至3には、コンタクトホールおよびコンタクトプラグ形成方法の例が開示されている。
非晶質カーボン膜138の形成には、ブタン(C4H10)を原料ガスとし、温度550℃のプラズマCVD(Chemical Vapor Deposition)法を用いた。原料ガスにはブタン以外の水素化炭素ガスを用いることもできる。また、酸化シリコン膜139の形成にはテトラエトキシシラン(TEOS)を原料とするプラズマCVD法を用いた。ホトレジスト140の形成には通常のリソグラフィ法を用いた。
フッ素の原料ガスにはオクタフロロシクロブタン(C4F8)を用いたが、オクタフロロシクロペンタン(C5F8)や、その他のフッ化炭素ガスを用いることもできる。
酸化シリコン膜のエッチングにはフッ素含有ガスプラズマを用い、非晶質カーボン膜のエッチングには酸素ガスプラズマを用いた。
この時、非晶質カーボン膜143の加工のマスクに用いた酸化シリコン膜144は同時にエッチングされ消滅する。また、第1のコンタクトホール147aの底部には非晶質カーボン膜のペデスタル141の表面が露出する。
この工程では、第1のホールを形成するための加工のマスクとして用いた非晶質カーボン膜143も同時にエッチングされ消滅する。しかし、層間絶縁膜142、配線131は全くエッチングされない。
また、本実施例では、各々の加工段階で用いるエッチングのマスクに、後の工程でエッチングすべき対象物と同じ材料を用いているので、各エッチングの段階で自動的に消滅し、各段階で別にマスクを除去する工程を設ける必要がない。したがって、工程を簡略化できる効果がある。
有機塗布膜には、Dow Chemical社の商品名SiLKなどを用いることができる。特に、シリコンを含有していないSiLKを選択することができる。塗布膜なので表面の平坦性は極めて良好である。
酸化シリコン膜153は形成後、CMP法により表面を平坦化し、酸化シリコン膜142の表面から3000nmの厚さになるように調整した。有機塗布膜から成るペデスタル152の高さは1000nmなので、ペデスタル152上の酸化シリコン膜の厚さは2000nmとなる。
従来技術で厚い酸化シリコン膜153をエッチングしてホールを形成する場合、厚い酸化シリコン膜153の下層に位置する酸化シリコン膜142がエッチングされないように、窒化シリコン膜などを介在させる必要があるが、本実施例で用いる有機塗布膜は酸素のみのプラズマで除去可能であり、酸化シリコン膜、シリコン膜、金属膜などをエッチングすることがない。したがって、酸化シリコン膜153と酸化シリコン膜142の間に他の膜を介在させる必要がない。
なお、有機塗布膜を酸素含有プラズマで除去する場合、容量コンタクトプラグ148bおよびコンタクトプラグ148aの表面に1nm程度の酸化タングステンが形成されコンタクト抵抗が増大することがある。これを回避するためには酸素含有プラズマにより有機塗布膜をエッチングした後、400℃程度の水素雰囲気中での熱処理を施すことにより酸化タングステンをタングステンに還元することができる。また、酸素プラズマに代えて水素やアンモニアプラズマにより有機塗布膜をエッチングしても良い。
表面のタングステン159を除去することにより、メモリセル領域のシリンダホール内には、容量コンタクトプラグ148bに接続するキャパシタの下部電極160が形成される。一方、周辺回路領域には、コンタクトプラグ148aに接続するコンタクトプラグ161が形成される。
102 nウエル
103、104 pウエル
105 素子分離領域
106、107 トランジスタ
108、112 ドレイン
109 ソース
110 ゲート絶縁膜
111 ゲート電極
113、118、122、127、142 層間絶縁膜
114、128、136 コンタクトホール
115 ビット配線コンタクトプラグ
115a 多結晶シリコン
115b 金属シリサイド
116 ビット配線
116a、131a 窒化タングステン
116b、131b、148、159 タングステン
117、130、133、137 コンタクトプラグ
148a、161、165、166 コンタクトプラグ
119 容量コンタクトホール
120、148b 容量コンタクトプラグ
121 窒化シリコン膜
123 シリンダホール
124、160 下部電極
125、162 誘電体
126、163 上部電極
129 チタンシリサイド
131、167 配線層
132 スルーホール
134 配線
138、143、154 非晶質カーボン膜
139、144、150、153、155、164 酸化シリコン膜
140、145、151、156 ホトレジスト
141、152 ペデスタル
146、156a、156c コンタクトホールパターン
147a、147c、158c 第1のコンタクトホール
147b、147d、158d 第2のコンタクトホール
138a、149 有機塗布膜
157a、157c ホール
158a 第1のシリンダホール
158b 第2のシリンダホール
Claims (8)
- (1)半導体基板上に複数のペデスタルを形成する工程と、
(2)前記ペデスタルを埋め込むように絶縁膜を形成する工程と、
(3)前記ペデスタル表面が露出するように前記絶縁膜に第1のホールを形成する工程と、
(4)前記表面が露出したペデスタルを選択的に除去して、第1のホールに連続する第2のホールを形成することを特徴とする半導体装置の製造方法。 - (1)半導体基板上に第1の配線層もしくは第1のコンタクトプラグを形成する工程と、
(2)前記第1の配線層もしくは第1のコンタクトプラグ上に柱状のペデスタルを形成する工程と、
(3)前記柱状のペデスタルを埋め込むように絶縁膜を形成する工程と、
(4)前記柱状のペデスタル表面が露出するように前記絶縁膜に第1のコンタクトホールを形成する工程と、
(5)前記表面が露出した柱状のペデスタルを選択的に除去して、第1のコンタクトホールに連続する第2のコンタクトホールを形成し、前記第1の配線層もしくは第1のコンタクトプラグの表面を露出させる工程と、
(6)前記第1のコンタクトホールおよび前記第1のコンタクトホールに連続する前記第2のコンタクトホールを導体で埋め込んでコンタクトプラグを形成し、前記第1の配線層もしくは前記第1のコンタクトプラグと前記コンタクトプラグの上層に位置する第2の配線層もしくは第2のコンタクトプラグとを接続することを特徴とする半導体装置の製造方法。 - (1)半導体基板上に形成された層間絶縁膜に容量コンタクトプラグを形成する工程と、
(2)前記容量コンタクトプラグ上に柱状のペデスタルを形成する工程と、
(3)前記柱状のペデスタルを埋め込むように絶縁膜を形成する工程と、
(4)前記柱状のペデスタル表面が露出するように前記絶縁膜に第1のシリンダホールを形成する工程と、
(5)前記表面が露出した柱状のペデスタルを選択的に除去して、第1のシリンダホールに連続する第2のシリンダホールを形成して前記容量コンタクトプラグの表面を露出させる工程と、
(6)前記第1のシリンダホールおよび前記第1のシリンダホールに連続する前記第2のシリンダホールの内面にキャパシタの下部電極を形成し、前記容量コンタクトプラグと前記下部電極を接続する工程と、
(7)全面に誘電体および上部電極を形成し、キャパシタを形成する工程を含むことを特徴とする半導体装置の製造方法。 - 前記ペデスタルは、回転塗布法で形成する有機塗布膜もしくは化学気相成長法で形成する非晶質カーボン膜からなることを特徴とする請求項1乃至3記載の半導体装置の製造方法。
- 前記ペデスタルは、シリコンを含有しないことを特徴とする請求項1乃至4記載の半導体装置の製造方法。
- 前記ペデスタルを埋め込むように絶縁膜を形成する工程の後、前記絶縁膜に第1のホール、第1のコンタクトホールもしくは第1のシリンダホールを形成する工程の前に、前記絶縁膜の表面を平坦化する工程を含むことを特徴とする請求項1乃至5記載の半導体装置の製造方法。
- 第1の配線層もしくは第1のコンタクトプラグと、前記第1の配線層もしくは第1のコンタクトプラグよりも上方に形成される第2の配線層もしくは第2のコンタクトプラグを接続する、第1の導体プラグおよび前記第1の導体プラグに連続して下に位置する第2の導体プラグから成るコンタクトプラグを備え、
前記第1の導体プラグの直径が、前記第1の導体プラグと第2の導体プラグの接触面の直径よりも大きいことを特徴とする半導体装置。 - 第1の配線層もしくは第1のコンタクトプラグと、
前記第1の配線層もしくは第1のコンタクトプラグ上に接続する第2の導体プラグと、
前記第2の導体プラグ上に接続する第1の導体プラグと、
前記第1の導体プラグに接続する第2の配線層もしくは第2のコンタクトプラグを備え、
前記第1の導体プラグの断面形状はすり鉢状であり、前記第2の導体プラグの断面形状は矩形状であることを特徴とする請求項7記載の半導体装置。
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JP2009253245A (ja) * | 2008-04-11 | 2009-10-29 | Spansion Llc | 半導体装置の製造方法 |
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US8216939B2 (en) * | 2010-08-20 | 2012-07-10 | Micron Technology, Inc. | Methods of forming openings |
US20130224948A1 (en) * | 2012-02-28 | 2013-08-29 | Globalfoundries Inc. | Methods for deposition of tungsten in the fabrication of an integrated circuit |
JP2015084400A (ja) * | 2013-09-18 | 2015-04-30 | マイクロン テクノロジー, インク. | 半導体装置及びその製造方法 |
US9679804B1 (en) | 2016-07-29 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-patterning to form vias with straight profiles |
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