TW201820590A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW201820590A
TW201820590A TW106127516A TW106127516A TW201820590A TW 201820590 A TW201820590 A TW 201820590A TW 106127516 A TW106127516 A TW 106127516A TW 106127516 A TW106127516 A TW 106127516A TW 201820590 A TW201820590 A TW 201820590A
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Taiwan
Prior art keywords
gate electrode
film
insulating film
region
semiconductor device
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TW106127516A
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English (en)
Chinese (zh)
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山口直
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日商瑞薩電子股份有限公司
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Publication of TW201820590A publication Critical patent/TW201820590A/zh

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW106127516A 2016-08-25 2017-08-15 半導體裝置之製造方法 TW201820590A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016164586A JP6713878B2 (ja) 2016-08-25 2016-08-25 半導体装置の製造方法
JP2016-164586 2016-08-25

Publications (1)

Publication Number Publication Date
TW201820590A true TW201820590A (zh) 2018-06-01

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TW106127516A TW201820590A (zh) 2016-08-25 2017-08-15 半導體裝置之製造方法

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US (1) US10186518B2 (enExample)
JP (1) JP6713878B2 (enExample)
KR (1) KR20180023831A (enExample)
CN (1) CN107785377B (enExample)
TW (1) TW201820590A (enExample)

Cited By (1)

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