KR20180023831A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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KR20180023831A
KR20180023831A KR1020170105955A KR20170105955A KR20180023831A KR 20180023831 A KR20180023831 A KR 20180023831A KR 1020170105955 A KR1020170105955 A KR 1020170105955A KR 20170105955 A KR20170105955 A KR 20170105955A KR 20180023831 A KR20180023831 A KR 20180023831A
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gate electrode
film
insulating film
region
semiconductor substrate
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Korean (ko)
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다다시 야마구찌
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르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20180023831A publication Critical patent/KR20180023831A/ko
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
KR1020170105955A 2016-08-25 2017-08-22 반도체 장치의 제조 방법 Withdrawn KR20180023831A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-164586 2016-08-25
JP2016164586A JP6713878B2 (ja) 2016-08-25 2016-08-25 半導体装置の製造方法

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