JP6713878B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP6713878B2
JP6713878B2 JP2016164586A JP2016164586A JP6713878B2 JP 6713878 B2 JP6713878 B2 JP 6713878B2 JP 2016164586 A JP2016164586 A JP 2016164586A JP 2016164586 A JP2016164586 A JP 2016164586A JP 6713878 B2 JP6713878 B2 JP 6713878B2
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gate electrode
film
insulating film
region
semiconductor device
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JP2018032760A5 (enExample
JP2018032760A (ja
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直 山口
直 山口
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2016164586A priority Critical patent/JP6713878B2/ja
Priority to US15/602,448 priority patent/US10186518B2/en
Priority to CN201710614700.3A priority patent/CN107785377B/zh
Priority to TW106127516A priority patent/TW201820590A/zh
Priority to KR1020170105955A priority patent/KR20180023831A/ko
Publication of JP2018032760A publication Critical patent/JP2018032760A/ja
Publication of JP2018032760A5 publication Critical patent/JP2018032760A5/ja
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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