TW201812887A - 晶圓切割方法 - Google Patents
晶圓切割方法 Download PDFInfo
- Publication number
- TW201812887A TW201812887A TW105130694A TW105130694A TW201812887A TW 201812887 A TW201812887 A TW 201812887A TW 105130694 A TW105130694 A TW 105130694A TW 105130694 A TW105130694 A TW 105130694A TW 201812887 A TW201812887 A TW 201812887A
- Authority
- TW
- Taiwan
- Prior art keywords
- cutting
- wafer
- cutter
- contact portion
- brush
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
一種晶圓切割方法包含提供一晶圓及進行一切割步驟及一觸壓步驟,該晶圓具有複數個晶粒及一金屬層,該金屬層形成於相鄰兩個該晶粒之間的一切割道,在該切割步驟中,以一刀具沿著該切割道切割該金屬層,使該晶圓形成複數個切割槽,且經切割的該金屬層殘留有複數個金屬殘留段於該些晶粒,在該觸壓步驟中,以一刷具沿著該切割槽觸壓該些金屬殘留段,以避免各該金屬殘留段凸出於各該晶粒之一表面。
Description
本發明是關於一種晶圓切割方法,特別是一種可避免金屬殘留段凸出於晶粒表面的晶圓切割方法。
請參閱第11圖,習知的晶圓切割方法係先將一晶圓400以一膠帶500固定於一載台600上,接著利用一刀具(圖未繪出)切割該晶圓400以形成複數個晶片410,然而於切割過程中,會形成許多凸出於該晶片410表面的金屬殘留段411,請參閱第12圖,當以覆晶技術使該晶片410與一基板700上的複數個凸塊710連接時(該基板700可為軟性基板、玻璃基板或其他材質的基板),凸出於該晶片410表面的該些金屬殘留段411會碰觸到該基板700,而導致半導體結構發生漏電或短路,或是影響電子訊號的輸入或輸出。
本發明之主要目的在於藉由一刷具觸壓因切割金屬層而形成的金屬殘留段,以避免金屬殘留段凸出於晶粒表面。
本發明之一種晶圓切割方法,其包含:提供一晶圓,該晶圓具有複數個晶粒及一金屬層,各該晶粒具有一表面,相鄰兩個該晶粒之間具有一切割道,該金屬層形成於該切割道;以及進行一切割步驟及一觸壓步驟,在該切割步驟中是以一刀具沿著該切割道切割該金屬層,使該晶圓形成複數個切割槽,且經切割的該金屬層殘留有複數個金屬殘留段於該些晶粒,在該觸壓步驟中是以一刷具之一接觸部沿著該切割槽觸壓各該金屬殘留段,以避免各該金屬殘留段凸出於各該晶粒之一表面。
本發明在該觸壓步驟中藉由該刷具觸壓該些金屬殘留段,以避免在該切割步驟中所殘留的各該金屬殘留段凸出於該晶粒之該表面,且使各該金屬殘留段不凸出於該晶粒之該表面的目的在於避免該些金屬殘留段於後續封裝製程中與其他元件接觸而導致漏電或短路,或是影響電子訊號傳輸,並可避免該些金屬殘留段於後續封裝製程中破壞其他元件。
請參閱第1圖,其為本發明之第一實施例,一種晶圓切割方法10包含「提供晶圓」11及「進行切割步驟及觸壓步驟」12。
請參閱第1至3圖,於步驟11中提供一晶圓100,該晶圓100具有複數個晶粒110及一金屬層120,該些晶粒110呈陣列排列,各該晶粒110具有一表面111,該表面111可為各該晶粒110之主動面或非主動面,相鄰兩個該晶粒110之間具有一切割道130,該金屬層120形成於該切割道130,較佳地,該晶圓100可選自於矽或III-V族化合物(如砷化鎵GaAs)等材料,該金屬層120可與該些晶粒110電性連接以進行電性測試,或者,在進行切割步驟時,該些金屬層120可用以供刀具對位。
請參閱第2及3圖,本發明以一晶圓切割裝置200切割該晶圓100,該晶圓切割裝置200包含一載台210、一刀具220及一刷具230,該刀具220及該刷具230設置於該載台210上方並朝向各該晶粒110之該表面111,該晶圓100設置於該載台210之一承載面211上,在本實施例中,該載台210用以承載該晶圓100,使該晶圓100相對於該刀具220及該刷具230位移,位移包含水平位移及垂直位移,或者在不同的實施例中,該刀具220及該刷具230相對於該晶圓100位移,位移包含水平位移及垂直位移,較佳地,該刀具220為一刀輪,該刷具230之一接觸部231由軟性材料製成,因此不會對該晶圓100造成損害,較佳地,該刷具230之該接觸部231可選自於人造毛、動物毛或植物毛等軟性材料,在本實施例中,該刷具230之該接觸部231選自於杜邦尼龍612刷毛。
請參閱第2及3圖,該晶圓100與該載台210之間具有一固定膠帶300,該固定膠帶300用以固定該晶圓100,以避免該晶圓100於切割過程中發生位移。
請參閱第3圖,該刀具220具有一末端221,該刷具230之該接觸部231具有一接觸端231a,該刀具220之該末端21及該接觸部231之該接觸端231a朝向該載台210之該承載面211,在本實施例中,該刀具220之該末端221與該承載面211之間具有一第一高度H1,該接觸部231之該接觸端231a與該承載面211之間具有一第二高度H2,在進行該切割步驟及該觸壓步驟前,該第一高度H1不小於該第二高度H2,以避免當該載台210垂直向上位移使該刀具220接觸該晶圓100時,該刷具230之該接觸部231接觸不到該晶圓100,在本實施例中,該第一高度H1大於該第二高度H2。
請參閱第1、4及5圖,於步驟12中進行一切割步驟及一觸壓步驟,在該切割步驟中,以該刀具220沿著該切割道130切割該金屬層120,使該晶圓100形成有複數個切割槽140,並使位於該切割槽140兩側的該些晶粒110彼此電性分離,請參閱第5圖,在本實施例中,該載台210首先承載著該晶圓100垂直向上位移,使該刀具220接觸該晶圓100,接著該載台210帶動該晶圓100相對於該刀具220水平位移,以使該刀具220沿著該切割道130切割該金屬層120以形成該切割槽140,在本實施例中,當該刀具220沿著該切割道130切割該金屬層120時,該刷具230之該接觸部231隨著該刀具220接觸該晶粒110之該表面111及至少一條切割槽140。
請參閱第5及6圖,第6圖為沿著第5圖A-A線之剖視圖,當該刀具220沿著該切割道130切割該金屬層120時,該金屬層120會殘留複數個金屬殘留段121於該些晶粒110,且該些金屬殘留段121受切割應力影響會凸出於各該晶粒110之該表面111。
請參閱第5及7圖,第7圖為沿著第5圖B-B線之剖視圖,在該觸壓步驟中,該刷具230之該接觸部231沿著該切割槽140抵觸各該晶粒110之該表面111及該切割槽140,並觸壓各該金屬殘留段121,由於該接觸部231為軟性材料,因此該接觸部231於該觸壓步驟中會產生形變。
請參閱第5及8圖,第8圖為沿著第5圖C-C線之剖視圖,該觸壓步驟是用以避免各該金屬殘留段121凸出於該晶粒110之該表面111,較佳地,當該刷具230之該接觸部231觸壓各該金屬殘留段121時,各該金屬殘留段121會因該刷具230之該接觸部231的橫向推力或縱向壓力而斷離該晶粒110或向下彎折至該切割槽140中,因此可有效地克服該些金屬殘留段121凸出於各該晶粒110之該表面111的問題,並可防止該些金屬殘留段121於後續封裝製程中與其他元件電性連接而導致漏電或短路,亦可防止該些金屬殘留電121影響電子訊號的輸入或輸出,或是損害其他元件而影響半導體結構的效能。
在本實施例中,該切割步驟及該觸壓步驟為同時進行,因此可於進行該切割步驟及該觸壓步驟的同時,以氣簾或水濂沖刷該晶圓100,以移除在該切割步驟中形成的晶圓碎片及在該觸壓步驟中斷離的該金屬殘留段121,避免晶圓碎片或該金屬殘留段121殘留於該晶圓100上。
請參閱第5圖,在本實施例中,沿著該刀具220之切割方向,該刷具230之該接觸部231設置於該刀具220後方,且該刀具220與該刷具230之該接觸部231位於相同的切割道130上,由於該切割步驟及該觸壓步驟為同時進行,因此當該刀具220沿著該切割道130切割該金屬層120以形成該切割槽140時,該刷具230之該接觸部231隨即沿著該切割槽140觸壓該些金屬殘留段121,以使各該金屬殘留段121斷離該晶粒110或是彎折至該切割槽140中,以避免該些金屬殘留段121凸出於該晶圓100之該表面111。
在其他實施例中,該觸壓步驟可於該切割步驟完成後再進行,即該刀具220切割完該晶圓100,使所有該些晶粒110彼此電性分離後,再以該刷具230之該接觸部231依序沿著各該切割槽140觸壓該些金屬殘留段121,以使各該金屬殘留段121斷離該晶粒110或是彎折至該切割槽140中。
請參閱第9及10圖,其為本發明之第二實施例,該第二實施例與該第一實施例之差異在於沿著該刀具220之切割方向,該刷具230之該接觸部231設置於該刀具220側邊,且該刀具220與該刷具230之該接觸部231位於不同切割道130上,由於該切割步驟及該觸壓步驟為同時進行,因此當該刀具220在切割該晶圓100以形成該切割槽140時,位於該刀具220側邊之該刷具230沿著先前所形成的該切割槽140觸壓該些金屬殘留段121,以使各該金屬殘留段121斷離該晶粒110或是彎折至該切割槽140中,請參閱第10圖,較佳地,該刷具230之該接觸部231與該刀具220之間至少間隔一切割道130,以避免該刷具230之該接觸部231與該刀具220相互干擾。
本發明之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本發明之精神和範圍內所作之任何變化與修改,均屬於本發明之保護範圍。
10‧‧‧晶圓切割方法
11‧‧‧提供晶圓
12‧‧‧進行切割步驟及觸壓步驟
100‧‧‧晶圓
110‧‧‧晶粒
111‧‧‧表面
120‧‧‧金屬層
121‧‧‧金屬殘留段
130‧‧‧切割道
140‧‧‧切割槽
200‧‧‧晶圓切割裝置
210‧‧‧載台
211‧‧‧承載面
220‧‧‧刀具
221‧‧‧末端
230‧‧‧刷具
231‧‧‧接觸部
231a‧‧‧接觸端
300‧‧‧固定膠帶
400‧‧‧晶圓
410‧‧‧晶片
411‧‧‧金屬殘留段
500‧‧‧膠帶
600‧‧‧載台
700‧‧‧基板
710‧‧‧凸塊
H1‧‧‧第一高度
H2‧‧‧第二高度
第1圖:依據本發明之第一實施例,一種晶圓切割方法之流程圖。 第2圖:依據本發明之第一實施例,一晶圓及一晶圓切割裝置之立體圖。 第3圖:依據本發明之第一實施例,該晶圓及該晶圓切割裝置之側視圖。 第4圖:依據本發明之第一實施例,該晶圓及該晶圓切割裝置之側視圖。 第5圖:依據本發明之第一實施例,該晶圓及該晶圓切割裝置之側視圖。 第6圖:沿著第5圖A-A線之剖視圖。 第7圖:沿著第5圖B-B線之剖視圖。 第8圖:沿著第5圖C-C線之剖視圖。 第9圖:依據本發明之第二實施例,一晶圓及一晶圓切割裝置之側視圖。 第10圖:依據本發明之第二實施例,該晶圓及該晶圓切割裝置之側視圖。 第11圖:習知晶圓切割後之示意圖。 第12圖:習知晶片覆晶後之示意圖
Claims (9)
- 一種晶圓切割方法,其包含: 提供一晶圓,該晶圓具有複數個晶粒及一金屬層,各該晶粒具有一表面,相鄰兩個該晶粒之間具有一切割道,該金屬層形成於該切割道;以及 進行一切割步驟及一觸壓步驟,在該切割步驟中是以一刀具沿著該切割道切割該金屬層,使該晶圓形成複數個切割槽,且經切割的該金屬層殘留有複數個金屬殘留段於該些晶粒,在該觸壓步驟中是以一刷具之一接觸部沿著該切割槽觸壓各該金屬殘留段,以避免各該金屬殘留段凸出於各該晶粒之該表面。
- 如申請專利範圍第1項所述之晶圓切割方法,其中當該刷具之該接觸部觸壓各該金屬殘留段時,各該金屬殘留段斷離該晶粒或彎折至該切割槽中。
- 如申請專利範圍第1項所述之晶圓切割方法,其中該切割步驟及該觸壓步驟為同時進行。
- 如申請專利範圍第3項所述之晶圓切割方法,其中沿著該刀具之切割方向,該刷具之該接觸部設置於該刀具後方,且該刀具與該接觸部位於相同切割道。
- 如申請專利範圍第3項所述之晶圓切割方法,其中沿著該刀具之切割方向,該刷具之該接觸部設置於該刀具側邊,且該刀具與該接觸部位於不同切割道。
- 如申請專利範圍第5項所述之晶圓切割方法,其中該刷具之該接觸部與該刀具之間至少間隔一切割道。
- 如申請專利範圍第1項所述之晶圓切割方法,其中該觸壓步驟於該切割步驟完成後進行。
- 如申請專利範圍第1項所述之晶圓切割方法,其中該晶圓設置於一載台之一承載面,該刀具具有一末端,該末端與該承載面之間具有一第一高度,該刷具之該接觸部具有一接觸端,該接觸端與該承載面之間具有一第二高度,在進行該切割步驟及該觸壓步驟前,該第一高度不小於該第二高度。
- 如申請專利範圍第1項所述之晶圓切割方法,其中該刷具之該接觸部由軟性材料製成,該接觸部於該觸壓步驟中牴觸各該晶粒之該表面及該切割槽,而產生形變。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105130694A TW201812887A (zh) | 2016-09-23 | 2016-09-23 | 晶圓切割方法 |
US15/342,241 US9929051B1 (en) | 2016-09-23 | 2016-11-03 | Wafer dicing method |
KR1020160146339A KR101847948B1 (ko) | 2016-09-23 | 2016-11-04 | 웨이퍼 절단 방법 |
JP2016217014A JP2018050020A (ja) | 2016-09-23 | 2016-11-07 | ウェハーの切断方法 |
CN201610980207.9A CN107871707A (zh) | 2016-09-23 | 2016-11-08 | 晶圆切割方法 |
SG10201609698PA SG10201609698PA (en) | 2016-09-23 | 2016-11-18 | Wafer dicing method |
SG10201808373QA SG10201808373QA (en) | 2016-09-23 | 2016-11-18 | Wafer dicing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105130694A TW201812887A (zh) | 2016-09-23 | 2016-09-23 | 晶圓切割方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201812887A true TW201812887A (zh) | 2018-04-01 |
Family
ID=61629247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105130694A TW201812887A (zh) | 2016-09-23 | 2016-09-23 | 晶圓切割方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9929051B1 (zh) |
JP (1) | JP2018050020A (zh) |
KR (1) | KR101847948B1 (zh) |
CN (1) | CN107871707A (zh) |
SG (2) | SG10201808373QA (zh) |
TW (1) | TW201812887A (zh) |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3735483A (en) * | 1970-03-20 | 1973-05-29 | Gen Electric | Semiconductor passivating process |
JPS61181615A (ja) | 1985-02-07 | 1986-08-14 | 三菱電機株式会社 | 半導体ウエ−ハ切断装置 |
JPH02155611A (ja) | 1988-12-07 | 1990-06-14 | Mitsubishi Electric Corp | ダイシング装置 |
JP2680453B2 (ja) * | 1989-12-11 | 1997-11-19 | 株式会社東京精密 | ダイシング方法 |
US6165813A (en) * | 1995-04-03 | 2000-12-26 | Xerox Corporation | Replacing semiconductor chips in a full-width chip array |
JP3496347B2 (ja) * | 1995-07-13 | 2004-02-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP2000173952A (ja) * | 1998-12-03 | 2000-06-23 | Fujitsu Quantum Device Kk | 半導体装置及びその製造方法 |
JP2001326193A (ja) | 2000-05-15 | 2001-11-22 | Sony Corp | ダイシング装置および方法 |
US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
JP2002043474A (ja) * | 2000-07-21 | 2002-02-08 | Nakamura Seisakusho Kk | 電子部品用パッケージの形成方法 |
US6946366B2 (en) * | 2000-12-05 | 2005-09-20 | Analog Devices, Inc. | Method and device for protecting micro electromechanical systems structures during dicing of a wafer |
JP2002224929A (ja) * | 2001-01-30 | 2002-08-13 | Takemoto Denki Seisakusho:Kk | 板状被加工物の切削装置 |
JP2003133256A (ja) | 2001-10-23 | 2003-05-09 | Sharp Corp | ダイシング装置 |
JP2003209089A (ja) | 2002-01-17 | 2003-07-25 | Sony Corp | ウェハの洗浄方法、洗浄装置およびダイシング装置 |
JP4279786B2 (ja) * | 2002-12-27 | 2009-06-17 | 富士通株式会社 | バンプの形成方法、半導体装置の製造方法、及び基板処理装置 |
JP3945415B2 (ja) * | 2003-02-14 | 2007-07-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2005142399A (ja) | 2003-11-07 | 2005-06-02 | Tokyo Seimitsu Co Ltd | ダイシング方法 |
JP2005191332A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置製造装置 |
US6974726B2 (en) * | 2003-12-30 | 2005-12-13 | Intel Corporation | Silicon wafer with soluble protective coating |
KR100630698B1 (ko) * | 2004-08-17 | 2006-10-02 | 삼성전자주식회사 | 솔더볼 접착 신뢰도를 높이는 반도체 패키지 및 그 제조방법 |
JP2007125667A (ja) * | 2005-11-07 | 2007-05-24 | Disco Abrasive Syst Ltd | 基板の切断装置 |
JP4777072B2 (ja) | 2006-01-11 | 2011-09-21 | 株式会社東京精密 | ダイシング装置 |
KR20090024408A (ko) | 2007-09-04 | 2009-03-09 | 삼성전자주식회사 | 스크라이브 래인 내의 금속 버를 제거하는 노즐을 갖는웨이퍼 소잉 장치, 웨이퍼 소잉 방법 및 이를 이용하여제작된 반도체 패키지 |
US7951688B2 (en) * | 2007-10-01 | 2011-05-31 | Fairchild Semiconductor Corporation | Method and structure for dividing a substrate into individual devices |
JP5156459B2 (ja) | 2008-04-09 | 2013-03-06 | Towa株式会社 | 基板の切断方法及び装置 |
GB2464549B (en) * | 2008-10-22 | 2013-03-27 | Cambridge Silicon Radio Ltd | Improved wafer level chip scale packaging |
US9548240B2 (en) * | 2010-03-15 | 2017-01-17 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming repassivation layer for robust low cost fan-out semiconductor package |
DE102010040062B4 (de) * | 2010-08-31 | 2014-05-22 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Eine Substratzerteilungstechnik für das Separieren von Halbleiterchips mit geringerem Flächenverbrauch |
US8365398B2 (en) * | 2011-01-26 | 2013-02-05 | Jeng-Jye Shau | Accurate alignment for stacked substrates |
DE102012111358A1 (de) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip |
US9355906B2 (en) * | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging devices and methods of manufacture thereof |
US9458012B2 (en) * | 2014-02-18 | 2016-10-04 | Freescale Semiconductor, Inc. | Method for shielding MEMS structures during front side wafer dicing |
JP2015220240A (ja) | 2014-05-14 | 2015-12-07 | 株式会社ディスコ | ウェーハの加工方法 |
JP6338478B2 (ja) | 2014-07-18 | 2018-06-06 | Towa株式会社 | 切断方法及び製品の製造方法 |
JP5976055B2 (ja) | 2014-08-21 | 2016-08-23 | 力晶科技股▲ふん▼有限公司 | 半導体ウエハ、半導体チップ及び半導体装置とそれらの製造方法 |
JP2016134433A (ja) | 2015-01-16 | 2016-07-25 | 株式会社東芝 | ダイシング装置 |
KR20160057966A (ko) * | 2014-11-14 | 2016-05-24 | 가부시끼가이샤 도시바 | 처리 장치, 노즐 및 다이싱 장치 |
-
2016
- 2016-09-23 TW TW105130694A patent/TW201812887A/zh unknown
- 2016-11-03 US US15/342,241 patent/US9929051B1/en active Active
- 2016-11-04 KR KR1020160146339A patent/KR101847948B1/ko active IP Right Grant
- 2016-11-07 JP JP2016217014A patent/JP2018050020A/ja active Pending
- 2016-11-08 CN CN201610980207.9A patent/CN107871707A/zh active Pending
- 2016-11-18 SG SG10201808373QA patent/SG10201808373QA/en unknown
- 2016-11-18 SG SG10201609698PA patent/SG10201609698PA/en unknown
Also Published As
Publication number | Publication date |
---|---|
US20180090379A1 (en) | 2018-03-29 |
US9929051B1 (en) | 2018-03-27 |
KR101847948B1 (ko) | 2018-04-11 |
SG10201609698PA (en) | 2018-04-27 |
SG10201808373QA (en) | 2018-10-30 |
CN107871707A (zh) | 2018-04-03 |
JP2018050020A (ja) | 2018-03-29 |
KR20180033028A (ko) | 2018-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7098077B2 (en) | Semiconductor chip singulation method | |
US9034733B2 (en) | Semiconductor die singulation method | |
US8692357B2 (en) | Semiconductor wafer and processing method therefor | |
US20210358740A1 (en) | Method for manufacturing semiconductor device and manufacturing method of the same | |
TWI455199B (zh) | 晶圓切割製程 | |
CN104979187A (zh) | 晶圆的分割方法 | |
US20190088624A1 (en) | Manufacturing method of semiconductor device and semiconductor device | |
US8193613B2 (en) | Semiconductor die having increased usable area | |
CN113953689A (zh) | 一种晶圆的切割方法 | |
US7259043B2 (en) | Circular test pads on scribe street area | |
KR101764024B1 (ko) | 웨이퍼 구조물 및 웨이퍼 다이싱 방법 | |
JP6299412B2 (ja) | 半導体装置および半導体装置の製造方法 | |
TWI637478B (zh) | 晶圓及其形成方法 | |
JPH04297056A (ja) | 半導体装置の製造方法 | |
TW201812887A (zh) | 晶圓切割方法 | |
JP2000173952A (ja) | 半導体装置及びその製造方法 | |
TWI556303B (zh) | 分離晶圓基材上表層之複數個半導體元件晶粒方法 | |
JP2007251098A (ja) | 半導体チップの製造方法 | |
TW201921453A (zh) | 半導體裝置的製造方法 | |
TWI443771B (zh) | 封裝用基板固定裝置及半導體晶片封裝體的製造方法 | |
US20170084490A1 (en) | Method for making ic with stepped sidewall and related ic devices | |
CN106298493A (zh) | 半导体装置的制造方法 | |
JP2017055013A (ja) | デバイスの製造方法 | |
JP2002231659A (ja) | 半導体装置の製造方法 | |
CN111180322B (zh) | 切割晶圆的方法 |