SG10201609698PA - Wafer dicing method - Google Patents

Wafer dicing method

Info

Publication number
SG10201609698PA
SG10201609698PA SG10201609698PA SG10201609698PA SG10201609698PA SG 10201609698P A SG10201609698P A SG 10201609698PA SG 10201609698P A SG10201609698P A SG 10201609698PA SG 10201609698P A SG10201609698P A SG 10201609698PA SG 10201609698P A SG10201609698P A SG 10201609698PA
Authority
SG
Singapore
Prior art keywords
dicing method
wafer dicing
wafer
dicing
Prior art date
Application number
SG10201609698PA
Inventor
Tu Chia-Jung
Chen Chih-Lung
Liao Wen-Hsiang
Wei Chung-Hsiang
Liu Yung-Chi
Original Assignee
Chipbond Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipbond Technology Corp filed Critical Chipbond Technology Corp
Publication of SG10201609698PA publication Critical patent/SG10201609698PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG10201609698PA 2016-09-23 2016-11-18 Wafer dicing method SG10201609698PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW105130694A TW201812887A (en) 2016-09-23 2016-09-23 Wafer dicing method

Publications (1)

Publication Number Publication Date
SG10201609698PA true SG10201609698PA (en) 2018-04-27

Family

ID=61629247

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201609698PA SG10201609698PA (en) 2016-09-23 2016-11-18 Wafer dicing method
SG10201808373QA SG10201808373QA (en) 2016-09-23 2016-11-18 Wafer dicing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201808373QA SG10201808373QA (en) 2016-09-23 2016-11-18 Wafer dicing method

Country Status (6)

Country Link
US (1) US9929051B1 (en)
JP (1) JP2018050020A (en)
KR (1) KR101847948B1 (en)
CN (1) CN107871707A (en)
SG (2) SG10201609698PA (en)
TW (1) TW201812887A (en)

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JPH02155611A (en) 1988-12-07 1990-06-14 Mitsubishi Electric Corp Dicing apparatus
JP2680453B2 (en) * 1989-12-11 1997-11-19 株式会社東京精密 Dicing method
US6165813A (en) * 1995-04-03 2000-12-26 Xerox Corporation Replacing semiconductor chips in a full-width chip array
JP3496347B2 (en) * 1995-07-13 2004-02-09 株式会社デンソー Semiconductor device and manufacturing method thereof
JP2000173952A (en) * 1998-12-03 2000-06-23 Fujitsu Quantum Device Kk Semiconductor device and its manufacture
JP2001326193A (en) 2000-05-15 2001-11-22 Sony Corp Dicing device and dicing method
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
JP2002043474A (en) * 2000-07-21 2002-02-08 Nakamura Seisakusho Kk Forming method of package for electronic component
WO2002074686A2 (en) * 2000-12-05 2002-09-26 Analog Devices, Inc. A method and device for protecting micro electromechanical systems structures during dicing of a wafer
JP2002224929A (en) * 2001-01-30 2002-08-13 Takemoto Denki Seisakusho:Kk Device for cutting plate-like workpiece
JP2003133256A (en) 2001-10-23 2003-05-09 Sharp Corp Dicing device
JP2003209089A (en) 2002-01-17 2003-07-25 Sony Corp Cleaning method, cleaning device and dicing device for wafer
CN100477139C (en) * 2002-12-27 2009-04-08 富士通株式会社 Method for forming bumps, semiconductor device and method for manufacturing same, substrate processing apparatus and semiconductor manufacturing apparatus
JP3945415B2 (en) * 2003-02-14 2007-07-18 セイコーエプソン株式会社 Manufacturing method of semiconductor device
JP2005142399A (en) 2003-11-07 2005-06-02 Tokyo Seimitsu Co Ltd Dicing method
JP2005191332A (en) * 2003-12-26 2005-07-14 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor device and semiconductor device manufacturing equipment
US6974726B2 (en) * 2003-12-30 2005-12-13 Intel Corporation Silicon wafer with soluble protective coating
KR100630698B1 (en) * 2004-08-17 2006-10-02 삼성전자주식회사 Semiconductor package improving a solder joint reliability and method for manufacturing the same
JP2007125667A (en) * 2005-11-07 2007-05-24 Disco Abrasive Syst Ltd Cutting device of substrate
JP4777072B2 (en) 2006-01-11 2011-09-21 株式会社東京精密 Dicing machine
KR20090024408A (en) 2007-09-04 2009-03-09 삼성전자주식회사 Appratus for sawing a wafer having a nozzle eliminating a metal burr in a scribe lane, method of sawing the wafer and semiconductor package fabricated thereby the same
US7951688B2 (en) * 2007-10-01 2011-05-31 Fairchild Semiconductor Corporation Method and structure for dividing a substrate into individual devices
JP5156459B2 (en) 2008-04-09 2013-03-06 Ｔｏｗａ株式会社 Substrate cutting method and apparatus
GB2464549B (en) * 2008-10-22 2013-03-27 Cambridge Silicon Radio Ltd Improved wafer level chip scale packaging
US9548240B2 (en) * 2010-03-15 2017-01-17 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming repassivation layer for robust low cost fan-out semiconductor package
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US8365398B2 (en) * 2011-01-26 2013-02-05 Jeng-Jye Shau Accurate alignment for stacked substrates
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US9458012B2 (en) * 2014-02-18 2016-10-04 Freescale Semiconductor, Inc. Method for shielding MEMS structures during front side wafer dicing
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KR20160057966A (en) * 2014-11-14 2016-05-24 가부시끼가이샤 도시바 Processing apparatus, nozzle and dicing apparatus

Also Published As

Publication number Publication date
SG10201808373QA (en) 2018-10-30
JP2018050020A (en) 2018-03-29
KR20180033028A (en) 2018-04-02
TW201812887A (en) 2018-04-01
CN107871707A (en) 2018-04-03
US9929051B1 (en) 2018-03-27
US20180090379A1 (en) 2018-03-29
KR101847948B1 (en) 2018-04-11

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