TW201727777A - 黏晶裝置及黏晶方法 - Google Patents

黏晶裝置及黏晶方法 Download PDF

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Publication number
TW201727777A
TW201727777A TW105135452A TW105135452A TW201727777A TW 201727777 A TW201727777 A TW 201727777A TW 105135452 A TW105135452 A TW 105135452A TW 105135452 A TW105135452 A TW 105135452A TW 201727777 A TW201727777 A TW 201727777A
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Taiwan
Prior art keywords
die bonding
gas
collet
cover
heating
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TW105135452A
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English (en)
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TWI608550B (zh
Inventor
Teruyuki Nakamura
Akira Sekino
Hidehiro Taniguchi
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Furukawa Electric Co Ltd
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Publication of TW201727777A publication Critical patent/TW201727777A/zh
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)

Abstract

係將第2元件接合於第1元件之黏晶裝置，其包括：載置台，係將第1元件載置於載置區域；設置於載置台之下側的加熱器；側壁，係被設置成包圍載置台之載置區域；蓋，係具有第1及第2元件可通過之大小的孔，並被載置於側壁；筒夾，係藉由在前端部對第2元件進行真空夾住而可固持；移動機構，係使筒夾移動而使筒夾所固持之第2元件通過孔並被接合於第1元件；以及氣體供給管，係被設置於側壁，並向由側壁與蓋所形成的加熱空間供給加熱氣體；蓋係含有可將藉由加熱器及加熱氣體所產生之紅外線輻射反射或吸收．再輻射的材料。

Description

黏晶裝置及黏晶方法
本發明係有關於一種黏晶裝置及黏晶方法。
黏晶裝置係為了將半導體元件之晶片等的第2元件接合於支撐基材等的第1元件所使用(參照專利文獻1、2)。在黏晶裝置，一般，對第1元件加熱，使被塗佈於其表面的焊料熔化，或在加熱器上向第1元件供給焊料，藉加熱使其熔化，並使第2元件與第1元件接觸，進行接合。接合所使用之焊料係例如是焊錫或導電性黏著劑。
【先行專利文獻】 【專利文獻】
[專利文獻1]日本專利第4935491號公報
[專利文獻2]日本特開2009-81218號公報
可是，在相對第1元件之表面之焊料的溫度，即將接合之第2元件的溫度低的情況，在接合時焊料在短時間變成固態，而具有在焊料與第2元件之濕潤性不充分之狀態下接合結束的可能性。在此情況，第1元件與第2元件之熱阻變大，而具有可能使第2元件之特性及可靠性降低的問題。又，在第 2元件如長共振器式之半導體雷射元件的晶片、半導體雷射排列成陣列狀之雷射條元件的晶片等尺寸大的情況，會有在晶片之長度方向發生翹曲而在濕潤性局部不充分處存在之狀態下接合結束的情況。在此情況，亦具有可能使晶片之特性及可靠性降低的問題。
本發明係鑑於上述而開發的，其目的在於提供一種可在不會使元件之特性及可靠性降低下實施適合之接合的黏晶裝置及黏晶方法。
為了解決上述之課題，並達成目的，本發明之一形態的黏晶裝置係將第2元件接合於第1元件之黏晶裝置，其特徵為：包括：載置台，係將第1元件載置於載置區域；設置於上述載置台之下側的加熱器；側壁，係被設置成包圍上述載置台之載置區域；蓋，係具有上述第1及第2元件可通過之大小的孔，並被載置於上述側壁；筒夾，係藉由在前端部對上述第2元件進行真空夾住而可固持；移動機構，係使上述筒夾移動而使上述筒夾所固持之上述第2元件通過上述孔並被接合於上述第1元件；以及氣體供給管，係被設置於上述側壁，並向由上述側壁與上述蓋所形成的加熱空間供給加熱氣體；上述蓋係含有可將藉由上述加熱器及上述加熱氣體所產生之紅外線輻射反射或吸收．再輻射的材料。
本發明之一形態的黏晶裝置係特徵為：上述蓋係由上述材料所構成。
本發明之一形態的黏晶裝置係特徵為：上述蓋係 含有由上述材料所構成的層。
本發明之一形態的黏晶裝置係特徵為：上述材料係金屬、陶瓷、耐熱樹脂以及碳之至少一種。
本發明之一形態的黏晶裝置係特徵為：上述側壁係具有多層構造。
本發明之一形態的黏晶裝置係特徵為：上述氣體供給管係被設置成從上述蓋側觀察時上述加熱氣體在避開上述蓋之孔的方向噴射。
本發明之一形態的黏晶裝置係特徵為：上述氣體供給管係被設置成上述加熱氣體朝向上述載置台側噴射。
本發明之一形態的黏晶裝置係特徵為：上述加熱氣體係惰性氣體、還原性氣體、或惰性氣體與還原性氣體之混合氣體。
本發明之一形態的黏晶裝置係特徵為：上述筒夾係進行真空夾住的面積比上述第2元件被真空夾住之面的面積更小。
本發明之一形態的黏晶裝置係特徵為：上述筒夾係圓筒夾。
本發明之一形態的黏晶裝置係特徵為：上述筒夾的前端部由樹脂所構成。
本發明之一形態的黏晶裝置係特徵為：上述第2元件係長度方向的尺寸是4mm以上。
本發明之一形態的黏晶方法係將第2元件接合於第1元件之黏晶方法，其特徵為：包含：載置步驟，係將上述 第1元件載置於載置台的載置區域；加熱步驟，係以加熱器對上述第1元件加熱；氣體供給步驟，係向加熱空間供給加熱氣體，上述加熱空間係由上述載置台、被設置成包圍該載置台之載置區域的側壁、以及具有上述第1及第2元件可通過之大小的孔並被載置於上述側壁的蓋所形成；以及接合步驟，係在上述蓋的孔，使藉筒夾所固持之上述第2元件通過並導入上述加熱空間內，使上述第2元件與上述第1元件接觸，進行接合；上述蓋係含有可將藉由上述上述加熱器及上述加熱氣體所產生之紅外線輻射反射或吸收．再輻射的材料。
本發明之一形態的黏晶方法係特徵為：在上述加熱空間內以第1速度使上述第2元件移動，然後，以比上述第1速度更快的第2速度使上述第2元件移動，並使其與上述第1元件接觸。
本發明之一形態的黏晶方法係特徵為：在上述加熱空間內使上述第2元件停止，然後，使上述第2元件移動，並使其與上述第1元件接觸。
本發明之一形態的黏晶方法係特徵為：上述第2元件係長度方向的尺寸是4mm以上。
若依據本發明，具有可在不會使元件之特性及可靠性降低下實施適合之接合的效果。
1‧‧‧載置台
1a‧‧‧載置區域
1b‧‧‧吸入孔
2‧‧‧加熱器
3‧‧‧側壁
3a、3b‧‧‧金屬板材
4、4A‧‧‧蓋
4A1、4A2‧‧‧板狀構件
4a、4Aa‧‧‧孔
5、5A‧‧‧筒夾
5b、5Ab‧‧‧前端部
5c、5Ac、6a‧‧‧吸入孔
5a‧‧‧本體部
6‧‧‧移動機構
7‧‧‧氣體供給管
8、9‧‧‧位置調整用臂
100‧‧‧黏晶裝置
C‧‧‧半導體晶片
G‧‧‧加熱氣體
HS‧‧‧加熱空間
M‧‧‧次載具
M1‧‧‧基板
M2‧‧‧電極層
M3‧‧‧焊料層
第1圖係實施形態之黏晶裝置的示意性的部分切掉側視 圖。
第2圖係第1圖所示之黏晶裝置之示意性的平面圖。
第3圖係說明使用第1圖所示之黏晶裝置之黏晶方法的示意圖。
第4圖係說明使用第1圖所示之黏晶裝置之黏晶方法的示意圖。
第5圖係說明半導體晶片與筒夾的前端部之關係的示意圖。
第6圖係說明氣體供給管之配置例1的示意圖。
第7圖係說明氣體供給管之配置例2的示意圖。
第8圖係說明筒夾之其他的構成例的示意圖。
第9圖係說明蓋之其他的構成例的示意圖。
在以下，參照圖面，詳細說明本發明之實施形態。此外，本發明並未被限定於本實施形態。
(實施形態)
第1圖係實施形態之黏晶裝置的示意性的部分切掉側視圖。第2圖係第1圖所示之黏晶裝置之示意性的平面圖。黏晶裝置100係如後述所示，將第2元件之半導體雷射元件的晶片(以下有記載成半導體晶片的情況)接合於第1元件之次載具(submount)，製造晶片-次載具接合(chip on submount)。
黏晶裝置100包括載置台1、加熱器2、側壁3、蓋4、筒夾5、筒夾5的移動機構6、氣體供給管7以及位置調整用臂8、9。
載置台1係由不銹鋼所構成，但是亦可是銅等其他的金屬材料。載置台1係在表面具有載置次載具的載置區域1a。又，在載置台1的載置區域1a，形成有與真空泵連接之吸入孔1b。
加熱器2係被設置於載置台1之載置區域1a的下側。側壁3係被設置成包圍載置台1之載置區域1a，並具有由分開地配置之金屬板材3a與金屬板材3b之雙層所構成的多層構造。金屬板材3a、3b係由不銹鋼所構成，但是亦可是由銅等其他的金屬材料所構成。
蓋4係被載置於側壁3。蓋4係由不銹鋼所構成的板狀構件，但是亦可是由銅等其他的金屬材料所構成的板狀構件。蓋4具有次載具及半導體晶片可通過之大小的孔4a。側壁3與蓋4形成加熱空間HS。此外，蓋4係未被固定於側壁3，而可拆裝。藉此，容易拆下蓋4而維修(打掃或調整等)加熱空間HS。又，亦可採用將蓋4與側壁3一體化之構造，或採用防止氣體或輻射所造成之熱的洩漏之構造。又，在將蓋4載置於側壁3之狀態，蓋4的孔4a位於載置台1之載置區域1a的上方。
筒夾5係圓筒夾，具有由金屬所構成之本體部5a與由聚醯亞胺樹脂所構成的前端部5b，前端部5b的前端面是圓的。又，在筒夾5，形成在前端部5b的前端面開口，並與真空泵連接的吸入孔5c。筒夾5係以吸入孔5c吸住半導體晶片而進行真空夾住，藉此，能以前端部5b固持半導體晶片。
移動機構6係被安裝筒夾5，係用以使筒夾5移動 的機構。在移動機構6，形成有孔6a，其連接吸入孔5c與真空泵。
氣體供給管7係被設置成貫穿側壁3，並向加熱空間HS供給加熱氣體。位置調整用臂8、9係貫穿側壁3，且被設置成在彼此正交之方向移動自如。具體而言，位置調整用臂8係在第2圖之紙面左右方向移動自如，位置調整用臂9係在第2圖之紙面上下方向移動自如。位置調整用臂8、9係用以進行被載置於載置台1的載置區域1a之次載具的位置調整之物。
此外，在黏晶裝置100，具有未圖示之搬運機構，此搬運機構係用以使次載具移動至載置台1的載置區域1a並載置。
接著，參照第3圖、第4圖，說明使用黏晶裝置100之黏晶方法。
首先，如第3圖所示，進行載置步驟，藉由搬運機構使次載具M通過蓋4的孔4a，並載置於載置台1之載置區域1a。次載具M係將電極層M2與焊料層M3(在本實施形態為AuSn焊錫層)依序形成於基板M1之表面而形成。在載置後，使位置調整用臂8、9從起始位置在第3圖之箭號方向前進，對次載具M的載置位置進行微調。接著，如在第4圖以箭號所示，從載置台1的吸入孔1b以真空泵吸住次載具M，進行真空夾住。
接著，進行加熱步驟，以加熱器2對次載具M加熱。然後，如在第4圖以箭號所示，進行氣體供給步驟，從氣 體供給管7向加熱空間HS噴射並供給加熱氣體G。藉此，將加熱空間HS內加熱。加熱空間HS內的溫度係設定成半導體晶片成為適合接合的溫度。又，調整加熱器2的輸出，使次載具M變成焊料層M3所熔化的溫度。此外，若焊料層M3的溫度低，則有在接合時焊料層M3在過短時間內變成固態的情況。另一方面，若溫度高，則有焊料層M3變質的情況。例如，在焊料層M3是AuSn焊錫層的情況，若溫度高，則成為熔點高的化合物，而有變成固態的情況。為了防止這些問題，將加熱器2的輸出調整成使焊料層M3成為適當的溫度。
此處，藉由加熱器2及加熱氣體G對加熱空間HS內加熱，藉此，從載置台1、側壁3等產生紅外線輻射。在本實施形態之黏晶裝置100，因為蓋4由金屬材料之不銹鋼所構成，所以蓋4係將紅外線輻射反射或吸收．再輻射。其結果，抑制加熱空間HS內之溫度的降低。
接著，進行接合步驟。具體而言，藉由移動機構6，在蓋4的孔4a，使藉由筒夾5的真空夾住所固持的半導體晶片C通過，並導入加熱空間HS內。半導體晶片C係在加熱空間HS內被預熱。然後，藉由筒夾5使半導體晶片C與次載具M之焊料層M3接觸並推壓，進行接合。接著，從黏晶裝置100取出次載具M，並在電極層M2與半導體晶片C之間進行既定之配線步驟，藉此，製造晶片-次載具接合(chip on submount)。
此外，從加熱步驟至使半導體晶片C與次載具M之焊料層M3接觸並推壓，進行接合的時間係設定成焊料層M3不會變質之程度的時間。
又，亦可為了將半導體晶片C確實地加熱至適當的溫度，在加熱空間HS內使半導體晶片C以比較慢的第1速度移動，然後，以比第1速度快的第2速度使半導體晶片C與次載具M接觸。又，亦可在加熱空間HS內使半導體晶片C僅暫停既定時間，然後，使半導體晶片C移動，並與次載具M接觸。
在本實施形態之黏晶裝置100，蓋4將紅外線輻射反射或吸收．再輻射的結果，抑制加熱空間HS內之溫度的降低。因此，相對於次載具M之焊料層M3的溫度，適當地保持即將接合之半導體晶片C的溫度。藉此，在接合時焊料層M3與半導體晶片C的濕潤性充分之狀態，焊料層M3凝固而接合結束。其結果，因為抑制或防止半導體晶片C與次載具M之熱阻變大，所以抑制或防止半導體晶片C之特性的降低，並提高可靠性。
關於蓋4，為了減少與側壁3之間的間隙，重的比較好。藉由減少間隙，可抑制加熱氣體G從間隙流出。
此外，若將蓋4作成玻璃等透明之材質的蓋，接合作業的可見性佳，但是因為紅外線輻射透過蓋，所以相對於次載具M之焊料層M3的溫度，即將接合之半導體晶片C的溫度變低，而有發生接合不良所造成之熱阻之增加的情況。
尤其，在半導體晶片C之尺寸大(例如長度方向之尺寸為4mm以上)的情況，有在晶片之長度方向發生翹曲的情況。在此情況，若半導體晶片C之溫度低，則在半導體晶片C中有先與焊料層M3接觸的區域，且在此區域係側壁3的溫度 在接觸的瞬間降低，而有變成固態的情況。在這種情況，有後來與焊料層M3接觸的區域係局部地濕潤性變成不充分的情況。相對於此，在黏晶裝置100，因為適當地保持即將接合之半導體晶片C的溫度，所以抑制或防止如上述所示之局部地濕潤性變成不充分之處的發生。
又，在黏晶裝置100，因為側壁3具有多層構造，所以加熱空間HS內之熱難散熱，而更加抑制溫度的降低。
又，加熱空間HS的體積係為了使加熱空間HS內之溫度變成高温且均等，與次載具M、半導體晶片C等的尺寸相比，不會過大，而以儘量小為佳。
又，從氣體供給管7所供給之加熱氣體G係在本實施形態是氮氣，但是亦可是例如氬氣等其他的惰性氣體、氫氣等還原性氣體、或惰性氣體與還原性氣體之混合氣體。在加熱氣體G是還原性氣體的情況，具有防止焊料層M3之氧化的效果。又，加熱氣體G是空氣亦可。
又，在黏晶裝置100，在筒夾5與半導體晶片C接觸之部分的前端部5b是由樹脂所構成，導熱率比金屬更小。其結果，抑制或防止因半導體晶片C之熱傳導至筒夾5而半導體晶片C之溫度降低的情況。又，藉由前端部5b由樹脂所構成，半導體晶片C與前端部5b之間的密接性變高，而間隙減少。其結果，抑制或防止因氣體從間隙流入而使半導體晶片C之溫度降低的情況。此外，藉由使用硬度低者作為樹脂，使間隙減少之效果變成更高。進而，藉由前端部5b由樹脂所構成，在真空夾住時等亦抑制或防止半導體晶片C受到來自筒夾5的 撞擊。較佳之樹脂的例子係從耐熱性及硬度的觀點是聚醯亞胺，但是亦可是其他的樹脂。
又，在黏晶裝置100，筒夾5係圓筒夾。第5圖係說明半導體晶片C與筒夾5的前端部5b之關係的示意圖。如第5圖所示，筒夾5的前端部5b之前端面的面積係比半導體晶片C被真空夾住之面的面積更小。因此，筒夾5對半導體晶片C進行真空夾住的面積之吸入孔5c的面積亦比半導體晶片C被真空夾住之面的面積更小。藉此，在筒夾5對半導體晶片C進行真空夾住時，因吸入孔5c從半導體晶片C超出而氣體從那裡流入的情況被防止。若是圓筒夾，因為易使吸入孔5c的面積變小，所以較佳。
(氣體供給管之其他的配置例)
第6圖係說明氣體供給管之其他的配置例之第1配置例的示意圖。在第6圖所示之第1配置例，氣體供給管7係被設置成在從蓋4側觀察黏晶裝置100的情況，使加熱氣體G在避開蓋4之孔4a的方向噴射。若依據此第1配置例，從氣體供給管7所噴射之加熱氣體G係成直線地到達孔4a，並不會從那裡流出至加熱空間HS的外部，而易長久地滯留於加熱空間HS內。其結果，可對加熱空間HS有效地加熱。
第7圖係說明氣體供給管之第2配置例的示意圖。在第7圖所示之第2配置例，氣體供給管7係被設置成將加熱氣體G朝向載置台1側噴射。若依據此第2配置例，加熱氣體G係易長久地滯留於加熱空間HS內，而可對加熱空間HS有效地加熱。進而，藉加熱氣體G亦對次載具M有效地加 熱。
(筒夾之其他的構成例)
第8圖係說明筒夾之其他的構成例的示意圖。第8圖(a)係從側面所觀察之圖，第8圖(b)係與第5圖一樣地係說明半導體晶片與筒夾的前端部之關係的示意圖。筒夾5A係平筒夾，具有由金屬所構成之本體部5a與由聚醯亞胺樹脂所構成的前端部5Ab，前端部5Ab的前端面是長方形。又，與筒夾5一樣，在筒夾5A，形成在前端部5Ab的前端面開口，並與真空泵連接的吸入孔5Ac。筒夾5A係以吸入孔5Ac吸住半導體晶片C而進行真空夾住，藉此，能以前端部5Ab固持半導體晶片C。
筒夾5A的前端部5Ab之前端面的面積係比半導體晶片C被真空夾住之面的面積更小。因此，筒夾5A對半導體晶片C進行真空夾住的面積之吸入孔5Ac的面積亦比半導體晶片C被真空夾住之面的面積更小。藉此，在筒夾5A對半導體晶片C進行真空夾住時，因吸入孔5Ac從半導體晶片C超出而使氣體從那裡流入的情況被防止。
此外，在使用如第8圖所示之形狀的平筒夾的情況，因為可沿著長度方向在面上夾住半導體晶片C，所以在被夾住之狀態具有使半導體晶片C之翹曲變小之效果。不過，因為吸入孔5Ac之外周的長度亦變長，所以在半導體晶片C與吸入孔5Ac之間易產生間隙，氣體從那裡流入，而有使半導體晶片C之溫度降低的情況。因此，應在斟酌使翹曲變小之效果與易產生間隙的影響下，設定前端部5Ab的形狀。
(蓋之其他的構成例)
第9圖係說明蓋之其他的構成例的示意圖。具有孔4Aa之蓋4A成為將由不銹鋼所構成之板狀構件4A1、與由玻璃所構成之第2元件相黏貼的雙層構造。依此方式，蓋係亦可採用含有由可將紅外線輻射反射或吸收．再輻射之材料所構成之層的構成，亦可採用含有上述材料的構成。此外，作為可將紅外線輻射反射或吸收．再輻射之材料，係金屬、陶瓷、各種耐熱樹脂材料以及碳之至少一種。又，蓋亦可採用含有這些材料中2種以上的構成。
(實施例、比較例)
作為實施例1，使用在實施形態之黏晶裝置100的構成中，以平筒夾作為筒夾的黏晶裝置，並將長度1mm~5mm的半導體晶片接合於次載具，分別製作了複數個晶片-次載具接合(chip on submount)的樣品。另一方面，作為比較例，使用在實施例1之黏晶裝置的構成中，以玻璃板作為蓋的黏晶裝置，並將長度1mm~5mm的半導體晶片接合於次載具，分別製作了複數個晶片-次載具接合(chip on submount)的樣品。然後，從所製作之晶片-次載具接合(chip on submount)的次載具剝下半導體晶片，並確認了接合狀態。比較例與實施例1之差異係僅蓋的材質。在第1表表示其結果。此外，加熱空間內的溫度(預熱溫度)係在100℃~440℃之間變更，但是在第1表表示420℃的結果。
[第1表](第1表)
如第1表所示，在比較例的情況，在半導體晶片的長度為1mm~2mm的情況，在全部的樣品，接合狀態是良好(以記號「○」表示)，在長度為3mm的情況，有接合狀態是不良的樣品(以記號「△」表示)，在長度為4mm~5mm的情況，在全部的樣品，接合狀態是不良(以記號「×」表示)。另一方面，在實施例1的情況，在全部之長度的半導體晶片之全部的樣品，接合狀態是良好。此外，接合狀態是良好的情況係採用在剝下半導體晶片後殘留於次載具側的晶片之痕跡的比例是晶片尺寸之90%以上的情況。
接著，作為實施例2，使用實施形態之黏晶裝置100之構成(即，使用圓筒夾之構成)的黏晶裝置，並將長度4mm的半導體晶片接合於次載具，分別製作了複數個晶片-次載具接合(chip on submount)的樣品。進而，作為實施例3，使用實施例2之構成的黏晶裝置，並將長度4mm的半導體晶片接合於次載具，分別製作了複數個晶片-次載具接合(chip on submount)的樣品。不過，在實施例3，與實施例1、2相比，使在次載具之焊料(AuSn焊錫)的體積增大成1.5~3倍。然後，從所製作之晶片-次載具接合(chip on submount)的次載具剝下半導體晶片，並確認了接合狀態。將其結果與比較例之結果、及在實施例1半導體晶片的長度為4mm之情況的結果一起表示於第2表。
如第2表所示，在比較例，在半導體晶片的長度為4mm以上的情況，在全部的温度且全部的樣品，接合狀態是不良。可是，在實施例1的情況，在400℃~420℃的温度範圍，在全部的樣品，接合狀態是良好。進而，在實施例2的情況，在380℃~420℃的温度範圍，在全部的樣品，接合狀態是良好。進而，在實施例3的情況，在360℃~420℃的温度範圍，在全部的樣品，接合狀態是良好。
此外，並非藉由上述之實施形態來限定本發明。將上述之各構成元件適當地組合所構成者亦包含於本發明。又，進一步之效果、變形例等係可由本技術領域人員容易地導出。因此，本發明之更廣泛的形態係不限定為上述的實施形態，而可進行各種的變更。
【產業上的可利用性】
如以上所示，本發明之黏晶裝置及黏晶方法係適合應用於例如半導體晶片的黏晶。
1‧‧‧載置台
1b、5c、6a‧‧‧吸入孔
2‧‧‧加熱器
3‧‧‧側壁
4‧‧‧蓋
4a‧‧‧孔
5‧‧‧筒夾
5a‧‧‧本體部
5b‧‧‧前端部
6‧‧‧移動機構
7‧‧‧氣體供給管
8‧‧‧位置調整用臂
C‧‧‧半導體晶片
G‧‧‧加熱氣體
HS‧‧‧加熱空間
M‧‧‧次載具
M1‧‧‧基板
M2‧‧‧電極層
M3‧‧‧焊料層

Claims (16)

  1. 一種黏晶裝置，係將第2元件接合於第1元件之黏晶裝置，其特徵為：包括：載置台，係將第1元件載置於載置區域；設置於該載置台之下側的加熱器；側壁，係被設置成包圍該載置台之載置區域；蓋，係具有該第1及第2元件可通過之大小的孔，並被載置於該側壁；筒夾，係藉由在前端部對該第2元件進行真空夾住而可固持；移動機構，係使該筒夾移動而使該筒夾所固持之該第2元件通過該孔並被接合於該第1元件；以及氣體供給管，係被設置於該側壁，並向由該側壁與該蓋所形成的加熱空間供給加熱氣體；該蓋係含有可將藉由該加熱器及該加熱氣體所產生之紅外線輻射反射或吸收．再輻射的材料。
  2. 如申請專利範圍第1項之黏晶裝置，其中該蓋係由該材料所構成。
  3. 如申請專利範圍第1項之黏晶裝置，其中該蓋係含有由該材料所構成的層。
  4. 如申請專利範圍第1~3項中任一項之黏晶裝置，其中該材料係金屬、陶瓷、耐熱樹脂以及碳之至少一種。
  5. 如申請專利範圍第1項之黏晶裝置，其中該側壁係具有多 層構造。
  6. 如申請專利範圍第1項之黏晶裝置，其中該氣體供給管係被設置成從該蓋側觀察時該加熱氣體在避開該蓋之孔的方向噴射。
  7. 如申請專利範圍第1項之黏晶裝置，其中該氣體供給管係被設置成該加熱氣體朝向該載置台側噴射。
  8. 如申請專利範圍第1項之黏晶裝置，其中該加熱氣體係惰性氣體、還原性氣體、或惰性氣體與還原性氣體之混合氣體。
  9. 如申請專利範圍第1項之黏晶裝置，其中該筒夾係進行真空夾住的面積比該第2元件被真空夾住之面的面積更小。
  10. 如申請專利範圍第9項之黏晶裝置，其中該筒夾係圓筒夾。
  11. 如申請專利範圍第1項之黏晶裝置，其中該筒夾的前端部由樹脂所構成。
  12. 如申請專利範圍第1項之黏晶裝置，其中該第2元件係長度方向的尺寸是4mm以上。
  13. 一種黏晶方法，係將第2元件接合於第1元件之黏晶方法，其特徵為：包含：載置步驟，係將該第1元件載置於載置台的載置區域；加熱步驟，係以加熱器對該第1元件加熱；氣體供給步驟，係向加熱空間供給加熱氣體，該加熱空間係由該載置台、被設置成包圍該載置台之載置區域的側壁、以及具有該第1及第2元件可通過之大小的孔並被載 置於該側壁的蓋所形成；以及接合步驟，係在該蓋的孔，使藉筒夾所固持之該第2元件通過並導入該加熱空間內，使該第2元件與該第1元件接觸，進行接合；該蓋係含有可將藉該加熱器及該加熱氣體所產生之紅外線輻射反射或吸收．再輻射的材料。
  14. 如申請專利範圍第13項之黏晶方法，其中在該加熱空間內以第1速度使該第2元件移動，然後，以比該第1速度更快的第2速度使該第2元件移動，並使其與該第1元件接觸。
  15. 如申請專利範圍第13項之黏晶方法，其中在該加熱空間內使該第2元件停止，然後，使該第2元件移動，並使其與該第1元件接觸。
  16. 如申請專利範圍第13~15項中任一項之黏晶方法，其中該第2元件係長度方向的尺寸是4mm以上。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692044B (zh) * 2017-05-29 2020-04-21 日商新川股份有限公司 封裝裝置以及半導體裝置的製造方法
KR102608957B1 (ko) 2018-08-27 2023-12-01 삼성전자주식회사 플라즈마 처리 장치
CN109883748A (zh) * 2019-04-02 2019-06-14 无锡厦泰生物科技有限公司 一种分离式低热导tec检测装置
JP7425476B2 (ja) * 2020-04-06 2024-01-31 アスリートＦａ株式会社 接合装置

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278867A (en) * 1978-12-29 1981-07-14 International Business Machines Corporation System for chip joining by short wavelength radiation
JPS55156333A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Si chip replacing method
JPS5778645U (zh) * 1980-10-30 1982-05-15
JPH01143126U (zh) * 1988-03-23 1989-10-02
US4984731A (en) * 1989-10-05 1991-01-15 Matsushita Electric Industrial Co., Ltd. Method of packaging electronic component parts using a eutectic die bonder
JP2802133B2 (ja) * 1990-01-23 1998-09-24 松下電器産業株式会社 部品装着機
JP3206142B2 (ja) * 1992-10-15 2001-09-04 松下電器産業株式会社 ワイヤボンディング装置及びワイヤボンディング方法
JP3248778B2 (ja) * 1993-05-21 2002-01-21 ローム株式会社 半田ワイヤーにボール部を形成する方法
US5451274A (en) * 1994-01-31 1995-09-19 Motorola, Inc. Reflow of multi-layer metal bumps
KR100377981B1 (ko) * 1994-06-07 2003-05-27 텍사스 인스트루먼츠 인코포레이티드 성형화합물큐어링방법
US5668058A (en) * 1995-12-28 1997-09-16 Nec Corporation Method of producing a flip chip
US5735450A (en) * 1996-06-21 1998-04-07 International Business Machines Corporation Apparatus and method for heating a board-mounted electrical module for rework
JP3330037B2 (ja) * 1996-11-29 2002-09-30 富士通株式会社 チップ部品の接合方法および装置
JP3455838B2 (ja) * 1997-01-28 2003-10-14 澁谷工業株式会社 不活性ガス供給機構付ボンディングヘッド
JP3005502B2 (ja) * 1997-07-22 2000-01-31 山形日本電気株式会社 ダイボンディング装置
US6432744B1 (en) * 1997-11-20 2002-08-13 Texas Instruments Incorporated Wafer-scale assembly of chip-size packages
JP3475801B2 (ja) * 1998-08-21 2003-12-10 松下電器産業株式会社 電子部品のボンディング装置
JP2001210946A (ja) * 2000-01-26 2001-08-03 Victor Co Of Japan Ltd スポットリフロー装置
JP3796089B2 (ja) * 2000-02-14 2006-07-12 新光電気工業株式会社 薄板の位置決め装置
JP2002064268A (ja) * 2000-08-18 2002-02-28 Toray Eng Co Ltd 実装方法および装置
JP4711549B2 (ja) * 2001-06-27 2011-06-29 三洋電機株式会社 半導体装置の製造方法
TWI225279B (en) * 2002-03-11 2004-12-11 Hitachi Ltd Semiconductor device and its manufacturing method
US6866182B2 (en) * 2002-10-08 2005-03-15 Asm Technology Singapore Pte Ltd. Apparatus and method to prevent oxidation of electronic devices
JP2004158491A (ja) * 2002-11-01 2004-06-03 Juki Corp ダイボンディング装置
JP2005142460A (ja) * 2003-11-10 2005-06-02 Sony Corp ボンディング装置及びボンディング方法
FR2864419B1 (fr) * 2003-12-19 2006-04-28 Hispano Suiza Sa Procede pour braser un composant electronique sur une carte electronique, procede de reparation de la carte et installation pour la mise en oeuvre du procede
JP4056978B2 (ja) * 2004-01-19 2008-03-05 株式会社新川 ダイボンディング方法及びその装置
JP3790995B2 (ja) * 2004-01-22 2006-06-28 有限会社ボンドテック 接合方法及びこの方法により作成されるデバイス並びに接合装置
US7182793B2 (en) * 2004-01-22 2007-02-27 Asm Technology Singapore Pty Ltd. System for reducing oxidation of electronic devices
JP4043495B2 (ja) * 2006-04-20 2008-02-06 株式会社カイジョー ワーククランプ及びワイヤボンディング装置
US7614538B2 (en) * 2006-05-15 2009-11-10 Kulicke And Soffa Industries, Inc. Device clamp for reducing oxidation in wire bonding
JP2009252799A (ja) * 2008-04-01 2009-10-29 Nitto Denko Corp 半導体装置の製造方法
JP5320171B2 (ja) * 2009-06-05 2013-10-23 東京エレクトロン株式会社 基板処理装置
US20130153645A1 (en) * 2011-11-17 2013-06-20 Princeton Lightwave, Inc. Process for Hybrid Integration of Focal Plane Arrays
JP6104518B2 (ja) * 2012-04-27 2017-03-29 日産自動車株式会社 半導体装置の製造方法、断熱荷重治具及び断熱荷重治具の設置方法
US8870051B2 (en) * 2012-05-03 2014-10-28 International Business Machines Corporation Flip chip assembly apparatus employing a warpage-suppressor assembly
US10475763B2 (en) * 2015-05-26 2019-11-12 Asm Technology Singapore Pte Ltd Die bonding apparatus comprising an inert gas environment
US11574888B2 (en) * 2017-12-15 2023-02-07 Panasonic Intellectual Property Management Co., Ltd. Component joining apparatus, component joining method and mounted structure

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EP3373325A4 (en) 2019-05-01
JP6266167B2 (ja) 2018-01-24
WO2017077982A1 (ja) 2017-05-11
EP3373325A1 (en) 2018-09-12
CN107112248A (zh) 2017-08-29
JPWO2017077982A1 (ja) 2017-11-02
US20200243477A1 (en) 2020-07-30
US20170365578A1 (en) 2017-12-21
TWI608550B (zh) 2017-12-11

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