TW201602284A - 黏附層組成物、用於藉由奈米壓印而形成膜之方法、用於製造光學組件、電路板及電子設備之方法 - Google Patents
黏附層組成物、用於藉由奈米壓印而形成膜之方法、用於製造光學組件、電路板及電子設備之方法 Download PDFInfo
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Classifications
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- B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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Abstract
在奈米壓印法中,經光固化之產物經常與基材分離且因該經光固化之產物與該基材之間的黏附性不足而黏至模。此造成圖案分離之瑕疵。一種用於在基材與光可固化之組成物之間形成黏附層的黏附層組成物包括具有至少二個官能基之化合物(A)、及溶劑(B)。該等官能基包括至少一個能結合至該基材的官能基,其係選自由下列所組成之群組:羥基、羧基、硫醇基、胺基、環氧基、及(經封端之)異氰酸酯基;及至少一個氫給予基團,作為能結合至該光可固化之組成物的官能基。
Description
本發明係關於黏附層組成物、用於藉由奈米壓印而形成膜之方法、用於製造光學組件、電路板及電子設備之方法。
在半導體裝置及微機電系統(MEMS)領域中,持續需要小型化。因此,除了慣用光蝕刻技術之外,在基材(晶圓)上使用具有特定形狀之抗蝕劑(光可固化之組成物)圖案作為模的微製造技術最近受到注意。該亦稱為光奈米壓印技術之微製造技術使能在基材上形成數奈米等級的細微結構(例如,PTL 1)。在光奈米壓印技術中,首先將抗蝕劑施加至基材上將要形成圖案之區域(施加步驟)。隨後,將該抗蝕劑在模中形成圖案(模接觸步驟)。然後,藉由以光照射來固化該抗蝕劑(照射步驟)及從該模分離(脫模
步驟)。經過該等步驟,在該基材上形成具有特定形狀之樹脂圖案(經光固化之產物)。此外,藉由在該基材上其他區域重複上述步驟之順序,在該基材整個表面上形成細微結構。
不幸的是,在一些情況下,該藉由以光來固化光可固化之組成物所形成的經光固化之產物與該基材之間的黏附性不足。當在光奈米壓印方法之脫模步驟中從該經光固化之產物移除該模時,該經光固化之產物因此係與該基材分離並黏附至該模,造成圖案分離瑕疵。為了處理此問題,設計藉由在該光可固化之組成物與該基材之間形成黏附層以提高該光可固化之組成物與該基材之間的黏附性之技術(PTL 2)。
在PTL 2中,黏附層係由含有具有結合至含氮及不飽和鍵之雜環的反應性官能基且能與硫醇基形成化學鍵之化合物及有機化合物的組成物所形成。然而,即使在使用含有此種化合物之組成物的情況下,在一些實例中,該光可固化之組成物與該基材之間的黏附性未充分提高,且會發生造成瑕疵之圖案分離。
[PTL 1]日本專利早期公開案第2010-073811號
[PTL 2]日本專利早期公開案第2013-153084號
本發明提供能使光可固化之組成物牢固地黏附至基材,且防止圖案分離造成的瑕疵之黏附層組成物。
根據本發明之實施態樣,提供一種用於在基材與光可固化之組成物之間形成黏附層的黏附層組成物。該黏附層組成物含有具有至少二個結合官能基之化合物(A)、及溶劑(B)。該等結合官能基包括至少一個能結合至該基材的官能基及至少一個能結合至該光可固化之組成物的官能基。該能結合至該基材的官能基為選自由下列所組成之群組:羥基、羧基、硫醇基、胺基、環氧基、及(經封端之)異氰酸酯基;及該能結合至該光可固化之組成物的官能基為氫給予官能基。
本發明實施態樣之黏附層組成物將光可固化之組成物結合至光奈米壓印法中之基材。此外,使用該黏附層組成物之光奈米壓印法使得能形成經光固化之產物圖案而無圖案分離瑕疵,因而形成包括較少瑕疵圖案的光學組件、電路板及電子設備。
從以下範例實施態樣並參考附圖將明暸本發明之其他特徵。
101‧‧‧黏附層
102‧‧‧基材
103‧‧‧光可固化之組成物
104‧‧‧模
105‧‧‧塗膜
106/107‧‧‧對準標記
108‧‧‧光
109‧‧‧經光固化之產物
110‧‧‧經光固化之膜
111‧‧‧經光固化之產物圖案
112‧‧‧區域
113‧‧‧電路結構
[圖1A]圖1A為圖示用於形成經光固化之產物圖案及用於製造光學組件、電路板及電子設備的方法之步驟的
斷面圖。
[圖1B]圖1B為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1C]圖1C為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1D]圖1D為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1E]圖1E為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1F]圖1F為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1G]圖1G為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
[圖1H]圖1H為圖示用於形成經圖案化的膜及用於製造光學組件、電路板及電子設備的方法之步驟的斷面圖。
茲詳細說明本發明之實施態樣。本發明不局
限於下列實施態樣,且包括以熟習本領域之人士的知識基礎可在本發明範圍及精神內所進行的任何修改或改變。
根據本發明實施態樣之黏附層組成物意欲用
於在基材及光可固化之組成物之間形成的黏附層。該黏附層組成物含有具有至少二個結合官能基之化合物(A)、及溶劑(B)。該等結合官能基包括至少一個直接結合至烴或芳族烴且能結合至該基材的官能基、及至少一個直接結合至烴或芳族烴且能結合至該光可固化之組成物的官能基。
該能結合至該基材的官能基為選自由下列所組成之群組的至少一者:羥基、羧基、硫醇基、胺基、環氧基、及(經封端之)異氰酸酯基;及該能結合至該光可固化之組成物的官能基為氫給予官能基。
本發明之組成物可用作用於壓印,特別是光
奈米壓印的黏附層組成物。
茲將詳細說明該組成物的成分。
化合物(A)含有至少一個能結合至該基材的官能基及至少一個能結合至該光可固化之組成物的官能基。
「能結合至...之官能基」一詞係能形成化學鍵,諸如共價鍵、離子鍵、氫鍵、或藉由分子間力之鍵的官能基。
該化合物(A)具有能結合至該基材之官能基。此官能基係直接結合至烴或芳族烴,且係選自由下列所組成之群組:羥基、羧基、硫醇基、胺基、環氧基、異氰酸
酯基、及(經封端之)異氰酸酯基。
該化合物(A)亦具有能結合至該光可固化之組
成物的官能基。此官能基為結合至烴或芳族烴之氫給予基團。有利的氫給予官能基可為但不局限於容易與該光可固化之組成物形成共價鍵之官能基。此種氫給予官能基之實例包括硫醇基、烷胺基、及羥基。硫醇基及烷胺基更可能與該光可固化之組成物形成共價鍵,因此更有利。
由於PTL 2中所揭示之化合物含有直接結合
至含氮及不飽和鍵之雜環的反應性結合基及硫醇基,當該化合物係用於光奈米壓印法時,該雜環吸收光。其原因不詳,但一般認為光吸收降低黏附性。在本實施態樣之化合物(A)的情況下,另一方面,該等結合官能基係直接結合至該化合物之烴或芳族烴。據信此結構在光奈米壓印法中產生令人滿意的黏附性。
在該化合物(A)中,該結合至該基材之官能基
及該能結合至該光可固化之組成物的官能基可相同或不同。
此處所提及之用語「(經封端之)異氰酸酯基」
係指異氰酸酯基或經封端之異氰酸酯基。(烷基)胺基係指胺基或烷基胺基,而(甲基)丙烯酸化合物可為丙烯酸化合物或甲基丙烯酸化合物。
有利地,該化合物(A)具有複數個能結合至該
基材之官能基及/或複數個能結合至該光可固化之組成物的官能基。存在複數個該等官能基提高對該基材及該光可
固化之組成物之黏附性。官能基之數目可為二或多個,諸如三或更多個,較佳為四或更多個。較佳的是,該化合物(A)不具有雜環結構。預期該不具雜環結構之化合物(A)防止因UV吸收造成的黏附性降低。
有利地,該化合物(A)具有在四個方向延伸之
直鏈,且該等能結合至該基材或該光可固化之組成物之官能基係結合至該等直鏈的各末端。當該等結合官能基係結合至該四個直鏈之各末端時,該基材及該光可固化之組成物可有效率地彼此結合。因而,可產生令人滿意之黏附性。
在下文說明之用於形成黏附層的方法中之加
熱步驟中,該化合物(A)與存在於該基材之表面的官能基形成化學鍵,諸如共價鍵、離子鍵、氫鍵、或藉由分子間力之鍵。然後,在下文說明之照射步驟中,導致該化合物(A)與在該光可固化之組成物中產生之自由基之間的鏈轉移反應,因而在該化合物(A)與該光可固化之組成物中之可聚合化合物之間形成共價鍵。此可能是該基材與該光可固化之組成物之間的黏附性提高之原因。
具有硫醇基之化合物(A)的實例包括但不局限
於雙官能硫醇化合物,諸如1,6-己二硫酚、1,8-辛二硫酚、1,10-癸二硫酚、雙(巰乙酸)1,4-丁二酯、及1,4-雙(3-巰基丁醯氧基)丁烷;三官能硫醇化合物,諸如1,3,5-參(3-巰基丁醯氧基乙基)-1,3,5-三-2,4,6(1H,3H,5H)-三酮、參(3-巰基丙酸)三羥甲基丙酯、參(3-巰基丁酸)新戊四
酯;及分子中心具有四或多個硫醇基之四官能硫醇化合物,諸如肆(巰基乙酸)新戊四酯、肆(3-巰基丁酸)新戊四酯、及肆(3-巰基丙酸)新戊四酯。
具有(烷基)胺基之化合物(A)的實例包括但不
局限於含羧基之胺化合物,諸如N-苯甘胺酸、1,6-二胺基己-N,N,N',N'-四乙酸、二伸乙三胺五乙酸、及二伸乙三胺五乙酸衍生物;含羥基之胺化合物,諸如N,N,N',N'-肆(2-羥乙基)乙二胺、N,N,N',N'-肆(2-羥丙基)乙二胺、及N,N,N',N",N"-五(2-羥丙基)二伸乙三胺;及多官能胺化合物,諸如N,N,N",N"-四異丙基二伸乙三胺、及N,N,N",N"-四丁基二伸乙三胺。
該化合物(A)可為單一化合物或複數種化合物
之組合。
該黏附層組成物中之化合物(A)的含量可視該
組成物之黏度及黏附層之厚度而適當地調整,及其有利含量係在0.01重量至10重量%之範圍,諸如0.1重量%至7重量%。
只要溶劑可溶解該化合物(A),任何溶劑均可用作該黏附層組成物中所使用的溶劑(B)。較佳係,該溶劑(B)在常壓下的沸點在80℃至200℃之範圍。更佳係,該溶劑(B)具有酯結構、酮結構、羥基及醚結構中之至少一種結構。該等結構提高該化合物(A)之溶解性及其在基材上之可濕性。溶劑(B)之實例包括丙二醇一甲基醚乙酸
酯、丙二醇一甲基醚、環己酮、2-庚酮、γ-丁內酯、及乳酸乙酯。彼等可單獨使用或合併使用。從容易施加該組成物的觀點來看,丙二醇一甲基醚乙酸酯或其混合溶劑是有利的。
黏附層組成物中之該溶劑(B)的含量可視例如
該化合物(A)之黏度、容易塗覆及該黏附層之厚度而適當地調整,且其有利含量相對於該組成物總質量計為70質量%或更高。更有利地,該溶劑(B)之含量為90質量%或更高,諸如95質量%或更高。若該溶劑(B)之含量低於70質量%,該組成物在施加時會無法具有令人滿意的特性。
該黏附層組成物根據其在本發明欲產生效果的範圍內之用途,除了該化合物(A)及溶劑(B)以外,可另外含有添加劑(C)。此等添加劑包括界面活性劑、交聯劑、聚合物組分、抗氧化劑、及聚合抑制劑。
該黏附層組成物於23℃之黏度取決於該化合物(A)及該溶劑(B),且較佳係在0.5mPa.s至20mPa.s之範圍,更佳係在1mPa.s至10mPa.s之範圍,諸如在1mPa.s至5mPa.s之範圍。
該黏度為20mPa.s或更低之黏附層組成物可容易施加及促進其塗層之厚度的控制。
較佳係,該黏附層組成物含有儘量少量雜
質。本文中所提及之雜質係指除該化合物(A)、該溶劑(B)及該添加劑(C)以外的成分。
因此較佳係該黏附層組成物係經活化。例
如,該黏附層組成物可基於純化目的而經過濾。
在該實例中,更具體地說,該化合物(A)及該
溶劑(B)以及隨意的其他添加劑(C)之混合物可經由孔徑在0.001μm至5.0μm範圍的過濾器過濾。此過濾作用可在複數個步驟中進行或重複數次。濾液可經進一步過濾。可使用複數個具有不同孔徑的過濾器。該過濾器可由聚乙烯、聚丙烯、氟樹脂或耐綸(nylon)製成,但不局限於此。
諸如微粒物質等雜質可藉由此種過濾作用而
從該黏附層組成物移除。因而,可防止微粒物質或雜質在施加該黏附層組成物之後可能於黏附層中導致的非預期瑕疵。
若本實施態樣之黏附層組成物係用於製造半
導體積體電路,希望儘可能避免受到含金屬原子之金屬雜質污染,以防止該等金屬雜質干擾該產品的操作。在此種情況下,該黏附層組成物中之金屬雜質的濃度較佳為10ppm或更低,更佳為100ppb或更低。
與本實施態樣之黏附層組成物一起使用的光可固化之組成物通常含有可聚合化合物(D)及光聚合引發劑(E)。
該可聚合化合物(D)係與聚合因子(諸如從光聚
合引發劑(E)產生之自由基)聚合,因而藉由鏈反應(聚合反應)而形成聚合物膜。
該可聚合化合物(D)可為單一可聚合化合物或
複數種可聚合化合物之組合。
該可聚合化合物(D)可為可自由基聚合化合
物。該可自由基聚合化合物可具有至少一個丙烯醯基或甲基丙烯醯基,因此可為(甲基)丙烯酸化合物。
因此,有利的是該可聚合化合物(D)含有(甲基)
丙烯酸化合物,更有利的是,該(甲基)丙烯酸化合物為該可聚合化合物之主成分。最佳地,該可聚合化合物為(甲基)丙烯酸化合物。當(甲基)丙烯酸化合物為該可聚合化合物(D)之主成分時,該(甲基)丙烯酸化合物的含量為90重量%或更高。
若該可自由基聚合化合物為複數種各具有至
少一個丙烯醯基或甲基丙烯醯基之化合物的組合,有利的是可自由基聚合化合物含有單官能(甲基)丙烯酸酯單體及多官能(甲基)丙烯酸酯單體。藉由組合單官能(甲基)丙烯酸酯單體及多官能(甲基)丙烯酸酯單體,可形成牢固之經固化膜。
具有一個丙烯醯基或甲基丙烯醯基之單官能
甲基丙烯酸化合物的實例包括但不局限於(甲基)丙烯酸苯氧基乙酯、(甲基)丙烯酸苯氧基-2-甲基乙酯、(甲基)丙烯酸苯氧基乙氧基乙酯、(甲基)丙烯酸3-苯氧基-2-羥丙酯、
(甲基)丙烯酸2-苯基苯氧基乙酯、(甲基)丙烯酸4-苯基苯氧基乙酯、(甲基)丙烯酸3-(2-苯基苯基)-2-羥丙酯、經EO改質之(甲基)丙烯酸對異丙苯基酚酯、(甲基)丙烯酸2-溴苯氧基乙酯、(甲基)丙烯酸2,4-二溴苯氧基乙酯、(甲基)丙烯酸2,4,6-三溴苯氧基乙酯、經EO改質之(甲基)丙烯酸苯氧酯、經PO改質之(甲基)丙烯酸苯氧酯、(甲基)丙烯酸聚氧伸乙基壬基苯醚酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸1-金剛烷酯、(甲基)丙烯酸2-甲基-2-金剛烷酯、(甲基)丙烯酸2-乙基-2-金剛烷酯、(甲基)丙烯酸莰酯、(甲基)丙烯酸三環癸烷酯(tricyclodecanyl(meth)acrylate)、(甲基)丙烯酸二環戊烷酯(dicyclopentanyl(meth)acrylate)、(甲基)丙烯酸二環戊烯酯dicyclopentenyl(meth)acrylate)、(甲基)丙烯酸環己酯、(甲基)丙烯酸4-丁基環己酯、丙烯醯基嗎啉、(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸2-羥丁酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯(amyl(meth)acrylate)、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯(pentyl(meth)acrylate)、(甲基)丙烯酸異戊酯(isoamyl(meth)acrylate)、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸2-乙酯己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十一酯、(甲基)丙烯酸十
二酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸異硬脂酯、(甲基)丙烯酸苯甲酯、(甲基)丙烯酸四氫呋喃甲酯、(甲基)丙烯酸丁氧基乙酯、(甲基)丙烯酸乙氧基二乙二醇酯、一(甲基)丙烯酸聚乙二醇酯、一(甲基)丙烯酸聚丙二醇酯、(甲基)丙烯酸甲氧基乙二醇酯、(甲基)丙烯酸乙氧基乙酯、(甲基)丙烯酸甲氧基聚乙二醇酯、(甲基)丙烯酸甲氧基聚丙二醇酯、二丙酮(甲基)丙烯醯胺、異丁氧基甲基(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、第三辛基(甲基)丙烯醯胺、(甲基)丙烯酸二甲胺基乙酯、(甲基)丙烯酸二乙胺基乙酯、(甲基)丙烯酸7-胺基-3,7-二甲基辛酯、N,N-二乙基(甲基)丙烯醯胺及N,N-二甲胺基丙基(甲基)丙烯醯胺。
一些單官能(甲基)丙烯酸化合物為市售者,且
其實例包括但不局限於Aronix系列M101、M102、M110、M111、M113、M117、M5700、TO-1317、M120、M150及M156(各由Toagosei製造);MEDOL 10、MIBD0L 10、CHDOL 10、MMDOL 30、MEDOL 30、MIBDOL 30、CHDOL 30、LA、IBXA、2-MTA、HPA、及Biscoat系列#150、#155、#158、#190、#192、#193、#220、#2000、#2100及#2150(各由Osaka Organic Chemical Industry製造);Light Acrylates BO-A、EC-A、DMP-A、THF-A、HOP-A、HOA-MPE、HOA-MPL、PO-A、P-200A、NP-4EA及NP-8EA、及環氧基酯M-600A(各由Kyoeisha Chemical製造);KAYARAD TC110S、R-564
及R-128H(各由Nippon Kayaku製造);NK酯AMP-10G及AMP-20G(各由Shin-Nakamura Chemical製造);FA-511A、512A及513A(各由Hitachi Chemical製造);PHE、CEA、PHE-2、PHE-4、BR-31、BR-31M及BR-32(各由Dai-ichi Kogyo Seiyaku製造);VP(由BASF製造);及ACMO、DMAA及DMAPAA(各由Kohjin製造)。
具有二或多個丙烯醯基或甲基丙烯醯基之多
官能(甲基)丙烯酸化合物的實例包括但不局限於二(甲基)丙烯酸三羥甲丙烷酯、三(甲基)丙烯酸三羥甲丙烷酯、經EO改質之三(甲基)丙烯酸三羥甲丙烷酯、經PO改質之三(甲基)丙烯酸三羥甲丙烷酯、經EO、PO改質之三(甲基)丙烯酸三羥甲丙烷酯、二丙烯酸二羥甲基三環癸烷酯、三(甲基)丙烯酸新戊四醇酯、四(甲基)丙烯酸新戊四醇酯、二(甲基)丙烯酸乙二醇酯、二(甲基)丙烯酸四乙二醇酯、二(甲基)丙烯酸聚乙二醇酯、二(甲基)丙烯酸聚丙二醇酯、二(甲基)丙烯酸1,4-丁二醇酯、二(甲基)丙烯酸1,6-己二醇酯、二(甲基)丙烯酸新戊二醇酯、二丙烯酸1,3-金剛烷二甲醇酯、二丙烯酸1,9-壬二醇酯、二丙烯酸1,10-癸二醇酯、三(甲基)丙烯酸參(2-羥乙基)異三聚氰酸酯、參(丙烯醯氧基)異三聚氰酸酯、二(甲基)丙烯酸雙(羥甲基)三環癸烷酯、五(甲基)丙烯酸二新戊四醇酯、六(甲基)丙烯酸二新戊四醇酯、經EO改質之2,2-雙(4-((甲基)丙烯氧基)苯基)丙烷、經PO改質之2,2-雙(4-((甲基)丙烯氧基)苯基)丙烷及經EO、PO改質之2,2-雙(4-((甲基)丙烯氧基)苯
基)丙烷。
一些多官能(甲基)丙烯酸化合物為市售者,且
其實例包括但不局限於Yupimer UV SA1002及Yupimer UV SA2007(各由Mitsubishi Chemical製造);Biscoat系列#195、#230、#215、#260、#335HP、#295、#300、#360、#700、GPT及3PA(各由Osaka Organic Chemical Industry製造);Light Acrylates 4EG-A、9EG-A、NP-A、DCP-A、BP-4EA、BP-4PA、TMP-A、PE-3A、PE-4A及DPE-6A(各由Kyoeisha Chemical製造);A-DCP、A-HD-N、A-NOD-N及A-DOD-N(各由Shin-Nakamura Chemical製造);KAYARAD PET-30、TMPTA、R-604、DPHA、DPCA-20、-30、-60及-120、HX-620、D-310、及D-330(各由Nippon Kayaku製造);Aronix系列M208、M210、M215、M220、M240、M305、M309、M310、M315、M325及M400(各由Toagosei);及Ripoxy VR-77、Ripoxy VR-60及Ripoxy VR-90(各由Showa Denko製造)。
在前文提及之化合物中,(甲基)丙烯酸酯係指
丙烯酸酯或含有相同醇殘基之甲基丙烯酸酯作為該丙烯酸酯。又,(甲基)丙烯醯基係指丙烯醯基或含有相同醇殘基之甲基丙烯醯基作為該丙烯醯基。EO表示環氧乙烷,及經EO改質之化合物A為化合物A之(甲基)丙烯酸及醇殘基係以其間之環氧乙烷嵌段結構彼此結合的化合物。PO表示環氧丙烷,及經PO改質之化合物B為化合物B之
(甲基)丙烯酸及醇殘基係以其間之環氧丙烷嵌段結構彼此結合的化合物。
該光聚合引發劑(E)感受具有特定波長之光而產生聚合因子(自由基)。更具體而言,該光聚合引發劑為以光(輻射,諸如紅外輻射、可見光輻射、紫外輻射、遠紫外輻射、X射線輻射、及電子束及其他帶電粒子輻射)產生自由基之聚合引發劑(自由基產生劑)。例如,該光聚合引發劑以波長在150nm至400nm範圍之光產生自由基。
該光聚合引發劑(E)可為單一光聚合引發劑或複數種光聚合引發劑之組合。
範例自由基產生劑包括但不局限於經取代或未經取代之2,4,5-三芳基咪唑二聚物,諸如2-(鄰氯苯基)-4,5-二苯基咪唑二聚物、2-(鄰氯苯基)-4,5-二(甲氧苯基)咪唑二聚物、2-(鄰氟苯基)-4,5-二苯基咪唑二聚物、及2-(鄰或對甲氧苯基)-4,5-二苯基咪唑二聚物;二苯甲酮及二苯甲酮衍生物,諸如N,N'-四甲基-4,4'-二胺基二苯甲酮(米其勒酮)、N,N'-四乙基-4,4'-二胺基二苯甲酮、4-甲氧基-4'-二甲基胺基二苯甲酮、4-氯二苯甲酮、4,4'-二甲氧基二苯甲酮、及4,4'-二胺基二苯甲酮;α-胺基芳族酮衍生物,諸如2-苯甲基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1及2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-丙-1-酮;醌,諸如2-乙基蒽醌、菲醌、2-第三丁基蒽醌、八甲基蒽醌、1,2-苯
并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌;安息香醚衍生物,諸如安息香甲基醚、安息香乙基醚、及安息香苯基醚;安息香衍生物,諸如安息香、甲基安息香、乙基安息香、及丙基安息香;苯甲基衍生物,諸如苯甲基二甲基縮酮;吖啶衍生物,諸如9-苯基吖啶及1,7-雙(9,9'-吖啶基)庚烷;N-苯甘胺酸及N-苯甘胺酸衍生物;苯乙酮及苯乙酮衍生物,諸如3-甲基苯乙酮、苯乙酮苯甲基縮酮、1-羥基環己基苯基酮、及2,2-二甲氧基-2-苯基苯乙酮;硫代及硫代衍生物,諸如二乙基硫代、2-異丙基硫代、及2-氯硫代;氧化醯基膦衍生物,諸如氧化2,4,6-三甲基苯甲醯基二苯膦、氧化雙(2,4,6-三甲基苯甲醯基)苯膦、及氧化雙-(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基戊基膦;肟酯衍生物,諸如1,2-辛二酮、1-[4-(苯硫基)-2-(鄰苯甲醯基肟)]、乙酮-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-1-(鄰乙醯基肟);及酮(xamthone)、茀酮、苯甲醛、茀、蒽醌、三苯胺、咔唑、1-(4-異丙基苯基)-2-羥基-2-甲基丙-1-酮、及2-羥基-2-甲基-1-苯基丙-1-酮。
該自由基產生劑可為市售者,其實例包括但
不局限於Irgacure系列184、369、651、500、819、907、784及2959、CGI-1700、-1750及-1850、CG24-61、Darocur系列1116及1173、Lucirin TPO、LR 8893、及LR 8970(各由BASF製造);及Ubecryl P36(由UCB製
造)。
該光聚合引發劑(E)對該可聚合化合物(D)之總
重的比例係在0.01重量%至10重量%之範圍,較佳係在0.1重量%至7重量%之範圍。
當該光聚合引發劑(E)對該可聚合化合物(D)之
總重的比例為0.01重量%或更高時,可防止該光可固化之組成物的固化速率變差,因此可防止反應效率降低。當該光聚合引發劑(E)對該可聚合化合物(D)之總重的比例為10.0重量%或更低時,可防止該光可固化之組成物之經固化膜的機械性質變差。
與本實施態樣之黏附層組成物一起使用的光可固化之組成物根據其在本發明欲產生效果的範圍內之用途,除了可聚合化合物(D)及光聚合引發劑(E)以外,可另外含有其他添加劑(F)。此等添加劑包括敏化劑、氫予體、內部脫離劑、界面活性劑、抗氧化劑、溶劑、聚合物組分、及該光聚合引發劑(E)以外的聚合引發劑。
該敏化劑係隨意地添加以促進聚合反應或提高反應轉化速率。該敏化劑可為敏化染料。
該敏化染料為藉由吸收具有特定波長之光激發且與光聚合引發劑(E)相互作用的化合物。「相互作用」一詞意咔著例如能或電子從該受激發敏化染料轉移至該光聚合引發劑(E)。
敏化染料之實例包括但不局限於蒽衍生物、
蒽醌衍生物、芘衍生物、苝衍生物、咔唑衍生物、二苯甲酮衍生物、硫代衍生物、酮衍生物、香豆素衍生物、啡噻衍生物、樟腦醌衍生物、吖啶染料、硫代吡喃鎓鹽(thiopyrylium salt)為底之染料、部花青素染料、喹啉染料、苯乙烯基喹啉染料、酮基香豆素染料、硫代染料、染料、氧雜菁(oxonol)染料、花青染料、玫瑰紅染料及吡喃鎓鹽為底之染料。
該等敏化染料可單獨使用或合併使用。
該氫予體為可與從該光聚合引發劑(E)產生之
引發劑自由基或鏈末端自由基反應以產生反應更高之自由基的化合物。有利的是,該氫予體係於該光聚合引發劑(E)為光自由基產生劑時添加。
此種氫予體之實例包括但不局限於胺化合
物,諸如正丁胺、二正丁胺、三正丁基膦、烯丙基硫脲、第二苯甲基異硫脲鹽對甲苯亞磺酸鹽(s-benzylisothiuronium-p-toluene sulfinate)、三乙胺、甲基丙烯酸二乙基一乙酯、三伸乙基四胺、4,4'-雙(二烷胺基)二苯甲酮、N,N-二甲胺基苯甲酸乙酯、N,N-二甲胺基苯甲酸異戊酯、戊基-4-二甲胺基苯甲酸酯、三乙醇胺及N-苯基甘胺酸;及巰基化合物,諸如2-巰基-N-苯基苯并咪唑及巰基丙酸酯。
該等氫予體可單獨使用或合併使用。
該氫予體可具有作為敏化劑之功能。
當與本實施態樣之黏附層組成物一起使用之
該光可固化之組成物含有敏化劑或氫予體作為其他添加劑(F)時,該等添加劑各者相對於該可聚合化合物(D)之總重的比例可在0.1重量%至20重量%之範圍,諸如0.1重量%至5.0重量%,較佳係在0.2重量%至2.0重量%之範圍。當該敏化劑相對於該可聚合化合物(D)之總重的比例為0.1重量%或更高時,可更有效地促進聚合作用。又,藉由將該敏化劑或該氫予體控制為5.0重量%或更低,該光可固化之組成物可固化成具有充分大分子量之聚合物膜。又,此種敏化劑或氫予體數量不太可能無法溶解,且可防止該光可固化之組成物之貯存安定性變差。
內部脫離劑(internal releasing agent)可添加至
該光可固化之組成物以降低模與抗蝕劑之間的界面結合強度,即,用於移除該膜的力。本文所提及之內部脫離劑為在施加或放置該光可固化之組成物之前已添加至該光可固化之組成物的脫離劑。
該內部脫離劑可為聚矽氧界面活性劑、氟界
面活性劑、或烴界面活性劑。在本實施態樣中,該內部脫離劑係不可聚合的。
該氟界面活性劑可為具有全氟烷基之醇的聚
環氧烷(諸如聚環氧乙烷或聚環氧丙烷)加成物,或全氟聚醚之聚環氧烷(諸如聚環氧乙烷或聚環氧丙烷)加成物。該氟界面活性劑在分子之一部分(例如,端基)中可具有羥基、烷氧基、烷基、胺基或硫醇基等。
該氟界面活性劑可為市售產品。市售氟界面
活性劑之實例包括Megafac系列F-444、TF-2066、TF-2067及TF-2068(各由DIC製造);Fluorad系列FC-430及FC-431(各由Sumitomo 3M製造);Surflon S-382(由AGC製造);EFTOP EF-122A、122B、122C、EF-121、EF-126、EF-127及MF-100(各由Tochem Products製造);PF-636、PF-6320、PF-656及PF-6520(各由OMNOVA Solutions製造);Unidyne系列DS-401、DS-403及DS-451(各由Daikin Industries製造);及Ftergent系列250、251、222F及208G(各由Neos製造)。
該內部脫離劑可為烴界面活性劑。
該烴界面活性劑可為藉由將具有2至4個碳數之環氧烷添加至具有1至50個碳數之烷醇所產生的烷醇聚環氧烷加成物。
該烷醇聚環氧烷加成物之實例包括甲醇環氧乙烷加成物、癸醇環氧乙烷加成物、月桂醇環氧乙烷加成物、鯨蠟醇環氧乙烷加成物、硬脂醇環氧乙烷加成物、及硬脂醇環氧乙烷/環氧丙烷加成物。該烷醇聚環氧烷加成物之端基不局限於羥基,其係於將環氧烷簡單地加入烷醇時所形成。該羥基可經極性官能基(諸如羧基、胺基、吡啶基、硫醇基、或矽烷醇)、或疏水官能基(諸如烷基或烷氧基)取代。
可使用市售烷醇聚環氧烷加成物。其實例包括聚氧乙烯甲基醚(甲醇聚環氧乙烷加成物)BLAUNON系列MP-400、MP-550及MP-1000(各由Aoki Oil Industrial
製造);聚氧乙烯癸基醚(癸醇聚環氧乙烷加成物)FINESURF系列D-1303、D-1305、D-1307及D-1310(各由Aoki Oil Industrial製造);聚氧乙烯月桂基醚(月桂醇聚環氧乙烷加成物)BLAUNON EL-1505(由Aoki Oil Industrial製造);聚氧乙烯鯨蠟基醚(鯨蠟醇聚環氧乙烷加成物)BLAUNON系列CH-305及CH-310(各由Aoki Oil Industrial製造);聚氧乙烯硬脂基醚(硬脂醇聚環氧乙烷加成物)BLAUNON系列SR-705、SR-707、SR-715、SR-720、SR-730及SR-750(各由Aoki Oil Industrial製造);隨機共聚物型聚氧乙烯/聚氧丙烯硬脂基醚BLAUNON系列SA-50/50 1000R及SA-30/70 2000R(各由Aoki Oil Industrial製造);聚氧乙烯甲基醚Pluriol A760E(由BASF製造);及聚氧乙烯烷基醚EMULGEN系列(由Kao製造)。
在前文提及之烴界面活性劑中,烷醇聚環氧
烷加成物,特別是長鏈烷醇聚環氧烷加成物適於作為內部脫離劑(internal mold agent)。
內部脫離劑可單獨使用或合併使用。
當與本實施態樣之黏附層組成物一起使用之
光可固化之組成物含有內部脫離劑作為添加劑(F)之一時,該內部脫離劑相對於該可聚合化合物(D)之總重的比例可在0.001重量%至10重量%之範圍。較佳係,在0.01重量%至7重量%之範圍,更佳地在0.05重量%至5重量%之範圍。
當該內部脫離劑之比例至少在0.001重量%至
10重量%之範圍時,該模容易移除,且該光可固化之組成物可令人滿意地填充該模。
為了製備與本實施態樣之黏附層組成物一起使用的光可固化之組成物,在0℃至100℃之範圍的溫度下將該可聚合化合物(D)及光聚合引發劑(E)混合及溶解於彼此中。此亦適用於含有其他添加劑(F)的情況。
該與本實施態樣之黏附層組成物一起使用的光可固化之組成物的溶劑以外之成分的混合物於23℃下之黏度較佳係在1mPa.s至100mPa.s之範圍,更佳係在1mPa.s至50mPa.s之範圍,諸如在1mPa.s至20mPa.s之範圍。
黏度為100mPa.s或更低之光可固化之組成物可不花費長時間即填充該模中之細微圖案的凹陷。又,不可能發生造成所形成圖案中之瑕疵的填充失敗。
黏度為1mPa.s或更高之光可固化之組成物更可能均勻地施加在基材上,且不容易流出該模。
與本實施態樣之黏附層組成物一起使用的光可固化之組成物的溶劑以外之成分的混合物於23℃之表面張力較佳在5mN/m至70mN/m之範圍,更佳在7mN/m至35mN/m之範圍,諸如在10mN/m至32mN/m
之範圍。表面張力為5mN/m或更高的光可固化之組成物可不花費長時間即填充該模中之細微圖案的凹陷。
又,表面張力為70mN/m或更低的光可固化之組成物可形成具有平滑表面的經光固化之膜。
如同黏附層組成物,與本實施態樣之黏附層組成物一起使用的光可固化之組成物較佳係含有儘量少量雜質。
因此較佳係該光可固化之組成物係如該黏附層組成物般已經純化。例如,該光可固化之組成物可基於純化目的而經過濾。
在該實例中,更具體地說,該可聚合化合物(D)與該光聚合引發劑(E)及隨意的其他添加劑(F)之混合物可經由孔徑在0.001μm至5.0μm範圍的過濾器過濾。此過濾作用可在複數個步驟中進行或重複數次。濾液可經進一步過濾。可使用複數個具有不同孔徑的過濾器。該過濾器可由聚乙烯、聚丙烯、氟樹脂或耐綸(nylon)製成,但不局限於此。
諸如微粒物質等雜質可藉由此種過濾作用而從該光可固化之組成物移除。如此,可防止從藉由光固化該光可固化之組成物所形成之經光固化之膜中的微粒物質或其他雜質造成之不均勻所產生的非預期瑕疵。
若該光可固化之組成物係與本實施態樣之黏附層組成物一起使用於製造半導體積體電路,如同該黏附
層組成物之情況,希望儘可能避免受到含金屬原子之金屬雜質污染,以防止該等金屬雜質干擾該產品的操作。在此種實例中,該光可固化之組成物中之金屬雜質的濃度較佳為10ppm或更低,更佳為100ppb或更低。
茲將說明根據本發明實施態樣之用於形成經
圖案化的膜之方法。
圖1A至1H係圖示根據本發明實施態樣之用於形成經光固化之產物圖案的方法之示意斷面圖。
該方法包括:(1)黏附層形成步驟,其係藉由將本發明實施態樣之黏附層組成物施加至基材而形成黏附層;(2)施加步驟,其係將上述光可固化之組成物施加至該基材;(3)模接觸步驟,其係使該光可固化之組成物與模接觸;(4)對準步驟,其係使該模與該基材對準;(5)照射步驟,其係以光照射該光可固化之組成物以形成經光固化之膜;(6)脫模步驟,其係從該經光固化之膜移除該模。
該用於形成經光固化之產物圖案的方法結合壓印技術,更具體地說,光奈米壓印法。
藉由本發明實施態樣之方法形成於該經光固化之膜中的圖案可測量在1nm至10mm之範圍,諸如10nm至100μm。通常,使用光之用於形成奈米級(1nm至
100nm)圖案(具有塌陷及突起)的方法係稱為光奈米壓印法,且用於形成本發明經光固化之產物圖案的方法結合該光奈米壓印法。
茲將說明該方法的程序步驟。
在此步驟中(黏附層形成步驟),如圖1A所示,藉由將上述黏附層組成物施加至基材102來形成黏附層101。
將施加光可固化之組成物103之該基材102或處理基材通常為矽晶圓。為了形成壓印模,可使用石英基材作為基材102。在此實例中,該作為基材102之石英基材上可設置金屬化合物層(硬質遮罩材料層)。由於在該矽晶圓表面上存在矽烷醇基,當加熱時,該矽晶圓表面可能與化合物(A)之羥基、羧基、硫醇基、胺基、環氧基或(經封端之)異氰酸酯基反應。
然而,本發明中所使用之基材102不局限於矽晶圓,且可為用於半導體裝置之基材,諸如由鋁、鈦-鎢合金、鋁-矽合金、鋁-銅-矽合金、氧化矽、或氮化矽所製成的基材。或者,或者,可為形成有一或多種膜(諸如旋塗玻璃膜、有機膜、金屬膜、氧化物膜、及氮化物膜)之基材。
該黏附層組成物可藉由例如噴墨法、浸塗、氣刀塗覆、簾塗、線棒塗覆(wire barcode)法、凹版塗覆、擠出塗覆、旋塗、或狹縫掃描法施加至該基材。從容易施
加,特別是形成均勻厚度之觀點來看,以旋塗為宜。
在施加該黏附層組成物之後,有利的是可於
移除溶劑(B)時使該化合物(A)與該基材反應以形成化學鍵。此操作可藉由加熱進行。加熱溫度可視該化合物(A)與該基材之間的反應性以及該化合物(A)及該溶劑(B)的沸點而適當地調整,及可在70℃至250℃之範圍。較佳的是,該加熱溫度係在100℃至220℃之範圍,諸如140℃至220℃之範圍。該溶劑(B)之移除及該基材與該化合物(A)之間的反應可在不同溫度下進行。
藉由將該黏附層組成物施加至該基材所形成
之黏附層101的厚度取決於用途,及可在例如0.1nm至100nm之範圍。較佳係,其係在0.5nm至60nm之範圍,諸如1nm至10nm之範圍。
就形成該黏附層101而言,該黏附層組成物
之施加可重複數次。較佳的是,所形成之黏附層101係儘可能平坦。該黏附層之表面粗糙度較佳係1nm或更低。
在此步驟(施加步驟)中,如圖1B所示,將與該黏附層組成物一起使用之光可固化之組成物103施加(放置)於該基材102上。
該光可固化之組成物可藉由例如噴墨法、浸塗、氣刀塗覆、簾塗、線棒塗覆(wire barcode)法、凹版塗覆、擠出塗覆、旋塗、或狹縫掃描法施加至該基材。在光奈米壓印法中,噴墨法特別適合。所施加之光可固化之組
成物(圖案將轉移至其上)的厚度取決於用途,及可在例如0.01μm至100.0μm之範圍。
隨後,如圖1C所示,使於先前施加步驟中所施加的光可固化之組成物103與具有待轉移成所欲圖案之原始圖案的模104接觸。藉由使該光可固化之組成物103(圖案將轉移至其上)與模104接觸(圖1C(c-1)),該模104之細微圖案的凹陷係填充該光可固化之組成物103,因而形成填充該模104之細微圖案的塗膜105(圖1C(c-2))。
有鑑於隨後照射步驟,該模104係由光學透明材料製成。例如,該模104可由玻璃、石英、光學透明樹脂(諸如聚甲基丙烯酸甲酯(PMMA))或聚碳酸酯、由氣相沉積所形成之透明金屬膜、聚二甲基矽氧烷等之軟膜、經光固化之膜、或金屬膜製成。若使用光學透明樹脂作為該模104之材料,該光學透明樹脂為不溶於該光可固化之組成物103中任何成分的材料。石英最適合,原因係其熱膨脹係數小,因此不可能使該模中圖案變形。
該模104中之細微圖案的高度可在4nm至200nm之範圍,該圖案之各部分的縱橫比可在1至10之範圍。
該模104可在該模接觸步驟之前經表面處理以使該模104可容易從該光可固化之組成物103移除。就該表面處理而言,脫離劑可施加至該模之表面。待施加至
該模之表面的脫離劑實例包括聚矽氧脫離劑、氟為底之脫離劑、烴脫離劑、聚乙烯為底之脫離劑、聚丙烯為底之脫離劑、石蠟脫離劑、二十八酸脫離劑、及巴西棕櫚蠟脫離劑。可有利地使用為該施加類型(諸如由Daikin Industries所製造之Optool DSX)的市售脫離劑。脫離劑可單獨使用或合併使用。氟為底之脫離劑及烴脫離劑特別適合。
當如圖1C(c-1)所示使該光可固化之組成物
103與該模104接觸時,施加至該光可固化之組成物103之壓力通常但不局限於0MPa至100MPa之範圍。該壓力較佳係在0MPa至50MPa之範圍,更佳係在0MPa至30MPa之範圍,諸如0MPa至20MPa之範圍。
該模104係與該光可固化之組成物103保持
接觸在通常0.1秒至600秒之範圍內的期間,較佳係在0.1秒至300秒之範圍,更佳係在0.1秒至180秒之範圍,諸如0.1秒至120秒。
雖然該模接觸步驟可在任何氣氛中進行,諸
如空氣、減壓或惰性氣體之氣氛,但從防止氧或水分影響固化反應觀點來看,有利的是該模接觸步驟係在減壓或惰性氣體中進行。可用於此步驟中之惰性氣體包括氮、二氧化碳、氦、氬、氟氯碳化物氣體、及該等氣體之混合物。
當該模接觸步驟係在特定氣體之氣氛中進行時(包括空氣之情況),該氣體的壓力可在0.0001至10大氣壓。
該模接觸步驟可在含有可凝結氣體之氣氛(下
文稱為可凝結氣體氣氛)中進行。本文所提及之可凝結氣
體在模接觸步驟(圖1C(c-1))中該光可固化之組成物103(圖案將轉移至其上)與該模104接觸之前係以氣體形式存在於該氣氛中,且當該光可固化之組成物與該模104接觸時藉由施加至該光可固化之組成物103之壓力所產生的毛細管力而凝結成液體,以使所得之塗膜105及該氣氛中之該氣體填充該模104之細微圖案的凹陷以及該模與該基材之間的間隙。
在該可凝結氣體氣氛中進行之模接觸步驟
中,使該已填充該細微圖案之凹陷的氣體轉變成液體,從而移除氣泡。因此,該光可固化之組成物可令人滿意地填充該模的凹陷。該可凝結氣體可溶解於該光可固化組成物中。
該可凝結氣體之沸點低於或等於該氣氛之溫
度,及可在-10℃至23℃之範圍,諸如10℃至23℃。當該可凝結氣體之沸點在該範圍內時,可令人滿意地填充該模。
該可凝結氣體於該模接觸步驟中之氣氛的溫
度下之蒸汽壓低於或等於在該模接觸步驟中施加該模的壓力,及可在0.1MPa至0.4MPa之範圍。當該可凝結氣體之蒸汽壓在該範圍內時,可令人滿意地填充該模。若於該氣氛溫度下該蒸汽壓高於0.4MPa,氣泡不可能如預期地移除。反之,若於該氣氛溫度下該蒸汽壓低於0.1MPa,需要分解。此需要複雜設備。
用於該模接觸步驟之該氣氛的溫度可在但不
局限於20℃至25℃之範圍。
該可凝結氣體之實例包括氟碳化物(FC),包
括氟氯碳化物(CFC),諸如三氯化氟甲烷;氫氟碳化物(HFC)及氫氟氯碳化物(HCFC),諸如1,1,1,3,3-五氟丙烷(CHF2CH2CF3、HFC-245fa、PFP);及氫氟醚(hydrofluoro ether)(HFE),諸如五氟乙基甲基醚(CF3CF2OCH3、HFE-245mc)。
從在該模接觸步驟中於該氫氧化且在20℃至
25℃之溫度下令人滿意地填充該模的觀點來看,有利的是1,1,1,3,3-五氟丙烷(於23℃之蒸汽壓:0.14MPa,沸點:15℃)、三氯氟甲烷(於23℃之蒸汽壓:0.1056MPa,沸點:24℃)及五氟乙基甲基醚。特別有利的是1,1,1,3,3-五氟丙烷,原因係其具有高度安全性。
該等可凝結氣體可單獨使用或合併使用。該
可凝結氣體可與不可凝結氣體(諸如空氣、氮、二氧化碳、氦或氬)混合。從令人滿意地填充該模觀點來看,氦更適於作為待與該可凝結氣體混合的不可凝結氣體。當該氣體(可凝結氣體及氦)與該塗膜105一起填充該模104中之細微圖案的凹陷時,氦可通過該模,而該可凝結氣體轉變成液體。因此氦有助於令人滿意地填充該模。
在後續步驟中,如圖1D所示,至少該模或該處理基材之位置係經調整以使該模上之對準標記106與該處理基材上之對準標記107彼此對準。
隨後,如圖1E(e-1)所示,在該模與該基材對準的情況下,以通過該模104之光來照射該光可固化之組成物與該模或填充該模104中之圖案的塗膜105之間的接觸部分。因而,填充該模104之細微圖案的塗膜105之部分係藉由光108而固化成經光固化之產物109(圖1E(e-2))。
照射形成填充該模圖案之塗膜105的光可固化之組成物103的光係根據該光可固化之組成物敏感的波長而適當地選擇,且該光之實例包括波長為150nm至400nm之紫外線、X射線、及電子束。
其中,紫外線更適於作為照射該光可固化之組成物103之光(照射光108)。此係因為許多市售固化劑(光聚合引發劑)對紫外線敏感。發射紫外光之光源包括高壓汞蒸汽燈、超高壓汞蒸汽燈、低壓汞蒸汽燈、深UV燈、碳弧燈、化學燈、金屬鹵化物燈、氙燈、KrF準分子雷射、ArF準分子雷射、及F2準分子雷射。超高壓汞蒸汽燈較有利。光源之數目為一或更多。該填充該模圖案之塗膜105可部分或整體照射。
該照射可在該基材整個區域上間歇地進行數次或連續進行。或者,可在照射的第一階段中照射區域A,及在該照射的第二階段中照射與區域A不同的區域B。
在該照射步驟中,光可固化之組、成物的曝光
量可為90mJ/cm2或更低。較佳係,該曝光量係低至76mJ/cm2或更低,諸如30mJ/cm2或更低。
隨後,從該經光固化之產物109移除該模104。此時,具有特定圖案之經光固化之膜110已形成於該基材102上作為經光固化之產物圖案。
在該脫模步驟中,如圖1F所示,將該經光固化之產物109與該模104分離,產生具有與該模104中之細微圖案相反的圖案之經光固化之膜110。
在可凝結氣體氣氛中進行該模接觸步驟之情況下,該可凝結氣體隨著藉由從該經光固化之產物109移除該模104而使該經光固化之產物109與該模104之間的界面之壓力降低而蒸發。此有助於以低力道移除該模。
從該經光固化之產物109移除該模104的方式(包括用於脫模之條件)無特別限制,只要該經光固化之產物109無實質損壞即可。例如,可移動該模104以使之離開固定的處理基材102,或可移動該基材102以使之離開固定的模104。或者,可以相反方向牽引該模104及該基材102以使之彼此分離。
包括步驟(1)至(6)之上述方法形成在所希望位置具有從該模104中的凹凸圖案衍生之所希望凹凸圖案的經光固化之膜。所得之經光固化之膜可用作例如光學構件,諸如夫瑞乃透鏡(Fresnel lens)或繞射光柵,或該光學構件中之構件。在此實例中,該光學構件至少包括該基材
102及在該基材102上之經圖案化的經光固化之膜110。
在本實施態樣之方法中,包括步驟(1)至(6)系
列之重複單元(製程(shot))可對相同基材進行數次。藉由重複該包括步驟(1)至(6)之重複單元(製程)數次,可形成在複數個所希望位置具有從該模104的凹凸圖案衍生之所希望圖案的經光固化之膜。
經由步驟(6)或該脫模步驟所形成之經光固化之膜具有特定圖案,且其可存在於除應形成該圖案之區域以外之區域(下文中此等經光固化之膜之部分可稱為不想要部分)。在此情況下,該不想要部分係與下層黏附層一起移除以使所得之經光固化之產物圖案111可具有所希望之凹凸圖案(衍生自該模104中之凹凸圖案)。
在此步驟中,該經光固化之膜110的不想要部分可藉由例如蝕刻移除,以曝露該經光固化之膜110之圖案的凹陷中之基材102的表面。
為了藉由蝕刻移除該經光固化之膜110的凹陷中之不想要部分及下層黏附層,可應用任何技術而無特別限制,及可進行已知技術(諸如乾式蝕刻)。就該乾式蝕刻而言,可使用已知之乾式蝕刻設備。用於該乾式蝕刻之來源氣體係根據待蝕刻之經固化膜的元素組成而適當地選擇,其實例包括含鹵素氣體,諸如CF4、C2F6、C3F8、CCl2F2、CCl4、CBrF3、BCl3、PCl3、SF6、及Cl2;含氧氣體,諸如O2、CO、及CO2;惰性氣體,諸如He、N2、及
Ar;及H2及NH3。可使用該等氣體之混合氣體。
在包括步驟(1)至(7)之步驟的上述方法中,形
成在所希望位置具有所希望之凹凸圖案(衍生自該模104中之凹凸圖案)的經光固化之產物圖案111,因此完成具有該經光固化之產物圖案的物件。若該基材102係使用經光固化之產物圖案111處理,如下述在該基材上進行處理步驟(步驟(8))。
或者,該經光固化之產物圖案111可用於光
學組件中作為光學構件(或光學構件的一部分),諸如繞射光柵或偏光鏡。在此實例中,該光學組件至少包括該基材102及在該基材102上之經圖案化的經光固化之產物圖案111。
可使用藉由該用於形成本發明實施態樣之經光固化之產物圖案的方法所獲得之具有凹凸圖案的經光固化之產物圖案111作為半導體裝置(諸如LSI、系統LSI、DRAM、SDRAM、RDRAM或D-RDRAM)之層間絕緣膜,或作為半導體製造程序中所使用的抗蝕劑膜。
若使用該經光固化之產物圖案111作為抗蝕劑膜,對已藉由移除不想要部分之步驟(7)曝露的基材部分(以圖1G中之112表示的區域)進行蝕刻或離子植入。在此實例中,該經光固化之產物圖案111係作為蝕刻遮罩。此外,該基材102可設置電子構件。因而,根據該經光固化之產物圖案111之輪廓在讓基材102上形成電路結
構113(圖1H)。因而,製造用於半導體裝置等中的電路板。所得之電路板可連接至該電路板的控制機構以製造顯示器、相機、醫療設備、或其他設備之電子組件。
類似地,該經光固化之產物圖案111可用作
在製造光學組件或裝置組件(諸如微流體之流動通道結構及經圖案化介質結構)程序中的蝕刻或離子植入的抗蝕劑膜。
或者,可使用該經光固化之產物圖案111作
為用於蝕刻石英基材的遮罩以製造壓印模104作為複印模。在此實例中,該基材102或該石英基材可使用該經光固化之產物圖案111作為遮罩直接蝕刻。在石英基材上之硬質遮罩材料層可使用該經光固化之產物圖案111作為遮罩蝕刻,然後該石英基材係使用該硬質遮罩材料的轉移圖案作為遮罩來蝕刻。或者,可在該經光固化之產物圖案111之凹陷中由第二可固化組成物形成第二經光固化之產物,且使用該第二經光固化之產物蝕刻該石英基材。雖然在本實施態樣中已說明蝕刻及離子植入作為該使用該經光固化之產物圖案111作為遮罩用於蝕刻基材102的方法,該方法不局限於該等方法。例如,可在設置該經光固化之產物圖案111的基材102上進行鍍覆。在製造包括電路之基材或電子組件的方法中,該經光固化之產物圖案111最終可從該基材移除,或可留下作為裝置的構件。
茲參考以下實施例進一步詳細描述本發明。
然而,本發明不局限於所揭示實例。在下列說明中,除非另外指明,否則「份」及「%」係以重量為基準。
下列化合物(A)各與溶劑(B)、丙二醇一甲基醚乙酸酯(由Tokyo Chemical Industry製造)混合,以產生於該溶劑(B)中之0.1重量%化合物(A)的混合溶液。
經由孔徑為0.2μm之聚四氟乙烯過濾器過濾所得之混合溶液。如此製備表1所示之黏附層組成物1至6。
(A-1):1,3,5-參(3-巰基丁醯氧基乙基)-1,3,5-三-2,4,6(1H,3H,5H)-三酮,Karenz MT NR-1(商品名),由Showa Denko製造
(A-2):三羥甲基丙烷參(3-巰基丙酸酯)(由Tokyo Chemical Industry製造)
(A-3):新戊四醇肆(3-巰基丁酸酯)及新戊四醇參(3-巰基丁酸酯)之混合物,Karenz MT PE-1(商品名),由Showa Denko製造
(A-4):新戊四醇肆(3-巰基丙酸酯)(由Tokyo Chemical Industry製造)
(A-5):N-苯甘胺酸(由Tokyo Chemical Industry製造)
(A-6):N,N,N',N",N"-五(2-羥丙基)二伸乙三胺(由
Tokyo Chemical Industry製造)
(A-7):三聚硫氰酸(對照用)(由Tokyo Chemical Industry製造)
(A-8):6-(二丁基胺基)-1,3,5-三-2,4-二硫酚(對照用)(由Tokyo Chemical Industry製造)
藉由根據表2所示之比例混合下列可聚合化合物(D)、光聚合引發劑(E)及其他添加劑(F)來製備混合溶液。表2中之數字表示以重量份計的含量。
經由孔徑為0.2μm之聚乙烯過濾器過濾各所得之混合溶液。如此製備光可固化之組成物1至3。
(D-1):丙烯酸異莰酯IB-XA(產品名,由
Kyoeisha Chemical製造)
(D-2):丙烯酸苯甲酯V #160(產品名,由Osaka Organic Chemical Industry製造)
(D-3):二丙烯酸新戊二醇酯NP-A(產品名,由Kyoeisha Chemical製造)
(D-4):二丙烯酸二羥甲基三環癸烷酯DCP-A(產品名,由Kyoeisha Chemical製造)
(E-1):Lucirin TPO(由BASF製造)
(F-1):4,4'-雙(二乙基胺基)二苯甲酮(由Tokyo Chemical Industry製造)
(F-2):BLAUNON SR-730(由Aoki Oil Industrial製造)
如下述評估該基材與該光可固化之組成物之間的黏附性。
藉由以1500rpm旋塗30秒將所製備之黏附層組成物1至6各者施加至矽晶圓上,接著在160℃之熱板上加熱5分鐘。如此形成厚度為1nm或更低之黏附層。
在該具有黏附層之矽晶圓上滴落2μL之所製備的光可固化之組成物。然後以1mm厚之石英玻璃覆蓋該光可固化之組成物,從而填充35mm×25mm之區域。
隨後,該樣本係以具有超高壓汞蒸汽燈之UV光源發出且通過干擾濾光片的光經過該石英玻璃照射200秒。該干擾濾光片為VPF-25C-10-15-31300(由Sigmakoki製造),且該紫外光或照射光具有313±5nm之單一波長及1mW/cm2之照度。
在照射之後,強制移除該石英玻璃,且目視檢查該經光固化之膜的分離。在整個35mm×25mm區域中未展現分離的樣本判斷為良好,及在35mm×25mm區域中展現一些分離的樣本判斷為不良。
結果集中顯示於表3。
實施例1至10之黏附層展現該光可固化之組
成物與該基材之間無經光固化之膜分離的良好黏附性。另一方面,在不具黏附層的對照實例1至3之樣本中,在使用光可固化之組成物1至3任一者的情況下均勻觀察到該經光固化之膜分離。在使用含有化合物A-7或A-8作為該化合物(A)的黏附層組成物7或8之情況下,在使用光可
固化之組成物1至3任一者之情況中均觀察到該經光固化之膜分離。此可能是因為各含有氮及不飽和鍵之化合物A-7或A-8的雜環吸收光,因此降低黏附性之故。因此,預期使用本發明實施態樣之黏附層可用於提供不可能造成圖案分離之經光固化之物件。
雖然已參考範例實施態樣描述本發明,但應
暸解本發明不限於所揭示之範例實施態樣。以下申請專利範圍應符合最廣義解釋以包括所有此等修改及等效結構及功能。
110‧‧‧經光固化之膜
Claims (27)
- 一種用於在基材與光可固化之組成物之間形成黏附層的黏附層組成物,該黏附層組成物包含:含有至少二個結合官能基之化合物(A),該等結合官能基包括至少一個直接結合至烴或芳族烴且能結合至該基材的官能基、及至少一個直接結合至烴或芳族烴且能結合至該光可固化之組成物的官能基;以及溶劑(B),其中該能結合至該基材的官能基為選自由下列所組成之群組的至少一者:羥基、羧基、硫醇基、胺基、環氧基、及(經封端之)異氰酸酯基;及該能結合至該光可固化之組成物的官能基為氫給予官能基。
- 如申請專利範圍第1項黏附層組成物,其中該氫給予官能基為硫醇基或烷胺基。
- 如申請專利範圍第1或2項之黏附層組成物,其中該化合物(A)的分子中含有至少三個氫給予官能基。
- 如申請專利範圍第1至3項中任一項之黏附層組成物,其中該能結合至該基材的官能基為羥基及硫醇基中至少一者。
- 如申請專利範圍第1至4項中任一項之黏附層組成物,其中該化合物(A)無雜環結構。
- 如申請專利範圍第1項黏附層組成物,其中該化合物(A)具有以四個方向延伸之直鏈,該等直鏈之各末端係結合至該能結合至該基材的官能基或該能結合至該光可固化之組成物的官能基。
- 如申請專利範圍第1至6項中任一項之黏附層組成物,其中該化合物(A)的分子中含有至少四個硫醇基。
- 如申請專利範圍第1至4項中任一項之黏附層組成物,其中該化合物(A)為選自由下列所組成之群組的至少一者:1,3,5-參(3-巰基丁醯氧基乙基)-1,3,5-三-2,4,6(1H,3H,5H)-三酮、三羥甲基丙烷參(3-巰基丙酸酯)、新戊四醇肆(3-巰基丁酸酯)、新戊四醇參(3-巰基丁酸酯)、新戊四醇肆(3-巰基丙酸酯)、N-苯基甘胺酸、及N,N,N',N",N"-伍(2-羥丙基)二伸乙三胺。
- 如申請專利範圍第1至5項中任一項之黏附層組成物,其中該溶劑(B)為丙二醇一甲基醚乙酸酯或含有丙二醇一甲基醚乙酸酯。
- 如申請專利範圍第1至6項中任一項之黏附層組成物,其中該光可固化之組成物含有可聚合化合物及光聚合引發劑。
- 如申請專利範圍第10項之黏附層組成物,其中該可聚合化合物為(甲基)丙烯酸酯單體。
- 如申請專利範圍第1至11項中任一項之黏附層組成物,其中該黏附層組成物係用於壓印。
- 如申請專利範圍第1至12項中任一項之黏附層組成物,其中該黏附層組成物係用於UV奈米壓印。
- 一種用於形成經光固化之產物圖案的方法,其包括:藉由將如申請專利範圍第1至13項中任一項所述之 黏附層組成物施加至基材上來形成黏附層;將光可固化之組成物施加至該具有黏附層之基材;使該光可固化之組成物與具有待轉移的原始圖案之模接觸;以光照射該光可固化之組成物而形成經光固化之產物;以及從該經光固化之產物移除該模。
- 如申請專利範圍第14項之方法,其中該照射係使用紫外線進行。
- 如申請專利範圍第14項之方法,其中該基材的表面具有羥基。
- 如申請專利範圍第14至16項中任一項之方法,其中該模係由石英製成。
- 一種用於製造光學組件之方法,該方法包括:藉由如申請專利範圍第14至17項中任一項所述之方法在基材上形成經圖案化的膜。
- 一種用於製造光學組件之方法,該方法包括:藉由如申請專利範圍第14至17項中任一項所述之方法形成經圖案化的膜;以及藉由蝕刻或離子植入使用該經圖案化的膜作為遮罩來處理該基材。
- 一種用於製造電路板之方法,該方法包括:藉由如申請專利範圍第14至17項中任一項所述之方法形成經圖案化的膜; 藉由蝕刻或離子植入使用該經圖案化的膜作為遮罩來處理該基材;以及形成電子構件。
- 如申請專利範圍第20項之方法,其中該電路板為半導體元件。
- 一種用於製造電子設備之方法,該方法包括:藉由如申請專利範圍第20或21項中所述之方法來製備電路板;以及將該電路板連接至經建構用以控制該電路板的控制機構。
- 如申請專利範圍第14至17項中任一項之用於形成經圖案化的膜之方法,其中使該光可固化之組成物接觸係在含有可凝結氣體的氣氛中進行。
- 如申請專利範圍第23項之方法,其中該可凝結氣體為1,1,1,3,3-五氟丙烷。
- 如申請專利範圍第23或24項之方法,其中該含有可凝結氣體之氣氛為氦氣與該可凝結氣體的混合物。
- 一種用於製造壓印模之方法,該方法包括:藉由如申請專利範圍第14至17項中任一項所述之方法在基材上形成經光固化之產物圖案;以及使用該經光固化之產物圖案蝕刻該基材。
- 一種裝置組件,其包含:基材;由光可固化之組成物製成之經光固化之產物,在該基 材上具有凸起圖案;以及介於該基材與該經光固化之產物之間的黏附層,該黏附層含有包含至少二個包括能結合至該基材的官能基及能結合至該光可固化之組成物的官能基之結合官能基的化合物(A),其中該能結合至該基材的官能基係結合至烴且係選自由下列所組成之群組:羥基、羧基及硫醇基;而該能結合至該光可固化之組成物的官能基為至少一個結合至烴或芳族烴之氫給予官能基。
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