TW201511000A - 動態隨機存取記憶體裝置和自再新記憶體胞元的方法 - Google Patents
動態隨機存取記憶體裝置和自再新記憶體胞元的方法 Download PDFInfo
- Publication number
- TW201511000A TW201511000A TW103126202A TW103126202A TW201511000A TW 201511000 A TW201511000 A TW 201511000A TW 103126202 A TW103126202 A TW 103126202A TW 103126202 A TW103126202 A TW 103126202A TW 201511000 A TW201511000 A TW 201511000A
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- self
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- logic
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Links
- 238000000034 method Methods 0.000 title claims description 38
- 230000004044 response Effects 0.000 claims abstract description 47
- 230000010355 oscillation Effects 0.000 claims abstract description 29
- 230000007704 transition Effects 0.000 claims description 54
- 230000002269 spontaneous effect Effects 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 230000000630 rising effect Effects 0.000 claims description 16
- 230000014759 maintenance of location Effects 0.000 abstract description 10
- 230000008859 change Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009419 refurbishment Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/261,493 US7369451B2 (en) | 2005-10-31 | 2005-10-31 | Dynamic random access memory device and method for self-refreshing memory cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201511000A true TW201511000A (zh) | 2015-03-16 |
Family
ID=37996029
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103126202A TW201511000A (zh) | 2005-10-31 | 2006-10-17 | 動態隨機存取記憶體裝置和自再新記憶體胞元的方法 |
| TW095138232A TWI457927B (zh) | 2005-10-31 | 2006-10-17 | 動態隨機存取記憶體裝置和自再新記憶體胞元的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095138232A TWI457927B (zh) | 2005-10-31 | 2006-10-17 | 動態隨機存取記憶體裝置和自再新記憶體胞元的方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (4) | US7369451B2 (enExample) |
| EP (1) | EP1943651B1 (enExample) |
| JP (1) | JP5193050B2 (enExample) |
| KR (1) | KR101319761B1 (enExample) |
| CN (1) | CN101300641B (enExample) |
| AT (1) | ATE555479T1 (enExample) |
| ES (1) | ES2386368T3 (enExample) |
| TW (2) | TW201511000A (enExample) |
| WO (1) | WO2007051285A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7369451B2 (en) * | 2005-10-31 | 2008-05-06 | Mosaid Technologies Incorporated | Dynamic random access memory device and method for self-refreshing memory cells |
| US8272781B2 (en) * | 2006-08-01 | 2012-09-25 | Intel Corporation | Dynamic power control of a memory device thermal sensor |
| KR100834403B1 (ko) * | 2007-01-03 | 2008-06-04 | 주식회사 하이닉스반도체 | 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법 |
| JP5583319B2 (ja) * | 2007-10-31 | 2014-09-03 | マイクロン テクノロジー， インク． | 半導体記憶装置及びその制御方法 |
| KR101020284B1 (ko) | 2008-12-05 | 2011-03-07 | 주식회사 하이닉스반도체 | 초기화회로 및 이를 이용한 뱅크액티브회로 |
| KR101096258B1 (ko) * | 2009-08-28 | 2011-12-22 | 주식회사 하이닉스반도체 | 플래그신호 생성회로 및 반도체 장치 |
| US9292426B2 (en) * | 2010-09-24 | 2016-03-22 | Intel Corporation | Fast exit from DRAM self-refresh |
| CN102064816A (zh) * | 2010-11-11 | 2011-05-18 | 苏州合欣美电子科技有限公司 | 一种生态屋的负压信号生成电路 |
| WO2013062874A1 (en) | 2011-10-24 | 2013-05-02 | Rambus Inc. | Dram retention test method for dynamic error correction |
| JP5728370B2 (ja) * | 2011-11-21 | 2015-06-03 | 株式会社東芝 | 半導体記憶装置およびその駆動方法 |
| US8605489B2 (en) * | 2011-11-30 | 2013-12-10 | International Business Machines Corporation | Enhanced data retention mode for dynamic memories |
| CN103369643B (zh) * | 2012-04-10 | 2018-01-23 | 中兴通讯股份有限公司 | 移动终端降低系统功耗的方法和装置 |
| US9087554B1 (en) | 2012-12-21 | 2015-07-21 | Samsung Electronics Co., Ltd. | Memory device, method for performing refresh operation of the memory device, and system including the same |
| CN104143355B (zh) * | 2013-05-09 | 2018-01-23 | 华为技术有限公司 | 一种刷新动态随机存取存储器的方法和装置 |
| US9513693B2 (en) * | 2014-03-25 | 2016-12-06 | Apple Inc. | L2 cache retention mode |
| CN107077882B (zh) | 2015-05-04 | 2023-03-28 | 华为技术有限公司 | 一种dram刷新方法、装置和系统 |
| US10331526B2 (en) * | 2015-07-31 | 2019-06-25 | Qualcomm Incorporated | Systems, methods, and apparatus for frequency reset of a memory |
| KR20170030305A (ko) | 2015-09-09 | 2017-03-17 | 삼성전자주식회사 | 메모리 장치의 리프레쉬 방법 |
| KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
| US10672449B2 (en) * | 2017-10-20 | 2020-06-02 | Micron Technology, Inc. | Apparatus and methods for refreshing memory |
| US10170174B1 (en) * | 2017-10-27 | 2019-01-01 | Micron Technology, Inc. | Apparatus and methods for refreshing memory |
| US10622052B2 (en) | 2018-09-04 | 2020-04-14 | Micron Technology, Inc. | Reduced peak self-refresh current in a memory device |
| FR3094830A1 (fr) * | 2019-04-08 | 2020-10-09 | Proton World International N.V. | Circuit d'alimentation d'une mémoire volatile |
| CN114333942B (zh) * | 2020-10-12 | 2025-04-22 | 华邦电子股份有限公司 | 虚拟静态随机存取存储器装置 |
| CN112612596B (zh) * | 2020-12-30 | 2022-07-08 | 海光信息技术股份有限公司 | 命令调度方法、装置、设备和存储介质 |
| US12154611B2 (en) | 2022-02-10 | 2024-11-26 | Micron Technology, Inc. | Apparatuses and methods for sample rate adjustment |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155596A (ja) * | 1982-03-10 | 1983-09-16 | Hitachi Ltd | ダイナミツク型ｍｏｓｒａｍ |
| JP3166239B2 (ja) * | 1991-10-17 | 2001-05-14 | 松下電器産業株式会社 | クロック信号供給装置 |
| US5365487A (en) * | 1992-03-24 | 1994-11-15 | Texas Instruments Incorporated | DRAM power management with self-refresh |
| US5335202A (en) * | 1993-06-29 | 1994-08-02 | Micron Semiconductor, Inc. | Verifying dynamic memory refresh |
| JP3415248B2 (ja) * | 1994-02-23 | 2003-06-09 | 富士通株式会社 | セルフリフレッシュ回路、半導体記憶装置及びセルフリフレッシュ方法 |
| JPH07262772A (ja) * | 1994-03-17 | 1995-10-13 | Fujitsu Ltd | シンクロナスｄｒａｍ |
| JP2606669B2 (ja) * | 1994-09-22 | 1997-05-07 | 日本電気株式会社 | 半導体記憶装置 |
| US5636173A (en) * | 1995-06-07 | 1997-06-03 | Micron Technology, Inc. | Auto-precharge during bank selection |
| JPH09147554A (ja) * | 1995-11-24 | 1997-06-06 | Nec Corp | ダイナミックメモリ装置及びその駆動方法 |
| JPH1139862A (ja) * | 1997-07-16 | 1999-02-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100363105B1 (ko) * | 1998-12-23 | 2003-02-19 | 주식회사 하이닉스반도체 | 셀 리키지 커런트 보상용 셀프 리프레쉬 장치 |
| JP4216457B2 (ja) * | 2000-11-30 | 2009-01-28 | 富士通マイクロエレクトロニクス株式会社 | 半導体記憶装置及び半導体装置 |
| US6741515B2 (en) * | 2002-06-18 | 2004-05-25 | Nanoamp Solutions, Inc. | DRAM with total self refresh and control circuit |
| JP4597470B2 (ja) * | 2002-07-25 | 2010-12-15 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| KR100502659B1 (ko) * | 2002-10-31 | 2005-07-22 | 주식회사 하이닉스반도체 | 저전력 셀프 리프레쉬 장치를 구비한 반도체 메모리 장치 |
| JP4211922B2 (ja) * | 2003-06-13 | 2009-01-21 | パナソニック株式会社 | 半導体装置 |
| JP2005025903A (ja) * | 2003-07-01 | 2005-01-27 | Nec Micro Systems Ltd | 半導体記憶装置 |
| US7369451B2 (en) * | 2005-10-31 | 2008-05-06 | Mosaid Technologies Incorporated | Dynamic random access memory device and method for self-refreshing memory cells |
| US7286377B1 (en) * | 2006-04-28 | 2007-10-23 | Mosaid Technologies Incorporated | Dynamic random access memory device and method for self-refreshing memory cells with temperature compensated self-refresh |
-
2005
- 2005-10-31 US US11/261,493 patent/US7369451B2/en active Active
-
2006
- 2006-10-12 JP JP2008536889A patent/JP5193050B2/ja not_active Expired - Fee Related
- 2006-10-12 KR KR1020087012127A patent/KR101319761B1/ko not_active Expired - Fee Related
- 2006-10-12 WO PCT/CA2006/001688 patent/WO2007051285A1/en not_active Ceased
- 2006-10-12 EP EP06790843A patent/EP1943651B1/en not_active Not-in-force
- 2006-10-12 CN CN2006800405497A patent/CN101300641B/zh not_active Expired - Fee Related
- 2006-10-12 ES ES06790843T patent/ES2386368T3/es active Active
- 2006-10-12 AT AT06790843T patent/ATE555479T1/de active
- 2006-10-17 TW TW103126202A patent/TW201511000A/zh unknown
- 2006-10-17 TW TW095138232A patent/TWI457927B/zh not_active IP Right Cessation
-
2008
- 2008-02-28 US US12/038,855 patent/US7768859B2/en active Active
-
2009
- 2009-08-17 US US12/542,296 patent/US7907464B2/en not_active Expired - Lifetime
-
2011
- 2011-01-11 US US13/004,461 patent/US8374047B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20090303824A1 (en) | 2009-12-10 |
| CN101300641A (zh) | 2008-11-05 |
| EP1943651A1 (en) | 2008-07-16 |
| JP5193050B2 (ja) | 2013-05-08 |
| US8374047B2 (en) | 2013-02-12 |
| CN101300641B (zh) | 2011-05-11 |
| WO2007051285A1 (en) | 2007-05-10 |
| ATE555479T1 (de) | 2012-05-15 |
| ES2386368T3 (es) | 2012-08-17 |
| TW200733108A (en) | 2007-09-01 |
| JP2009514128A (ja) | 2009-04-02 |
| KR20080063520A (ko) | 2008-07-04 |
| EP1943651A4 (en) | 2009-08-26 |
| US7768859B2 (en) | 2010-08-03 |
| TWI457927B (zh) | 2014-10-21 |
| KR101319761B1 (ko) | 2013-10-17 |
| US7369451B2 (en) | 2008-05-06 |
| US20110103169A1 (en) | 2011-05-05 |
| US7907464B2 (en) | 2011-03-15 |
| EP1943651B1 (en) | 2012-04-25 |
| US20080144418A1 (en) | 2008-06-19 |
| US20070097677A1 (en) | 2007-05-03 |
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