TW201332028A - 電子裝置、其製造方法及電子裝置製造設備 - Google Patents

電子裝置、其製造方法及電子裝置製造設備 Download PDF

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TW201332028A
TW201332028A TW101141742A TW101141742A TW201332028A TW 201332028 A TW201332028 A TW 201332028A TW 101141742 A TW101141742 A TW 101141742A TW 101141742 A TW101141742 A TW 101141742A TW 201332028 A TW201332028 A TW 201332028A
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Taiwan
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electrode
electronic component
electronic device
chamber
organic acid
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TW101141742A
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TWI475620B (zh
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Taiji Sakai
Nobuhiro Imaizumi
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Fujitsu Ltd
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    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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Abstract

根據本揭露，提供一種電子裝置的製造方法，其中包括將第一電子組件的第一電極的頂表面暴露於有機酸，以紫外線光照射暴露在有機酸的該第一電極之該頂表面，並藉由加熱和將該第一電極和該第二電極彼此壓抵而接合該第一電子組件和該第二電子組件的該第一電極和該第二電極。

Description

電子裝置、其製造方法及電子裝置製造設備
本文所討論的實施例係關於電子裝置、其製造方法及電子裝置製造設備
覆晶安裝方法為安裝半導體元件於電路板上的方法之一。在覆晶安裝中，電路板和半導體元件藉由迴焊(reflowing)及連接形成於電路板及半導體元件表面上的焊錫凸塊(solder pump)而電性地和機械性地連接彼此。
當焊錫凸塊小型化時，相鄰的焊錫凸塊間之距離變短。這會導致迴焊時熔化的凸塊間的電氣短路。此外，伴隨焊錫凸塊小型化而來的直徑減小，流過焊錫凸塊的電流密度會增加。這尤其會引起焊材沿著電流而流動的電遷移。
為避免這類的問題，曾提出了一種方法，該方法中的電極，如銅凸塊，通過在電極上進行熱壓接接合，從而引起電極中金屬材料的固相擴散，而非使用焊錫凸塊的連接方法。此接合法也被稱為作為固相擴散接合法。
在固相擴散接合中，不像使用焊錫凸塊的連接方法， 是不必要藉由回焊熔化電極。因此，即使相鄰的電極之間的距離減小時，電極不會發生短路。因此固相擴散接合有利於電子裝置的小型化。
然而，在固相擴散接合過程中，為促進電極間原子的擴散，高溫和高壓被施加到半導體元件上。這會損壞半導體元件。
以下揭露的相關技術係揭露於日本專利早期公開公報第04-309474號和第05-131279號。
本發明的一個目的是，在電子裝置中，一種製造電子裝置的方法和一種電子裝置的製造設備用以減少電子元件的損壞。
根據這裡所討論之一個態樣，提供了一種製造電子裝置的方法，該方法包括：將第一電子組件的第一電極之頂表面暴露於有機酸，照射紫外線光於暴露於有機酸的該第一電極的該頂表面，及藉由加熱和推壓該第一電極和第二電子組件的第二電極彼此而將該第一電極和該第二電極接合。
根據這裡所討論的另一態樣，提供一種電子裝置，包括：含有第一電極的第一電子組件，和接合到該第一電極的含有第二電極的第二電子組件，其中，結晶(crystal)層形成於該第一電極和該第二電極之間。
根據這裡所討論的又一態樣，提供了一種電子裝置的製造設備，包括：腔室(chamber)；設置在腔室內的平臺 (stage)，且其上置有具有電極的電子組件；以及設置在腔室內且組構成使用紫外線光來照射電極的紫外線燈，其中該紫外線燈的設置位置是能夠用紫外線光照射該電極的頂表面。
根據這裡所討論的另一態樣，提供了一種電子裝置的製造設備，包括：第一腔室，在其中係將包括第一電極之第一電子組件及包括第二電極之第二電子組件的至少其中一者的電極表面之氧化膜移除；第二腔室，連接到該第一腔室，在其中至少將該第一電極和該第二電極中的至少一者用紫外線光照射；接合機，連接到該第二腔室且組構成對準該第一電極和該第二電極；以及第三腔室，連接到該接合機，在其中該第一電子組件和該第二電子組件被加熱和相互壓抵。
1‧‧‧氧化膜
2‧‧‧有機酸金屬膜
3‧‧‧變質層
3x‧‧‧結晶層
3y‧‧‧結晶層中的晶粒
20‧‧‧電子裝置製造設備
21‧‧‧第一腔室
21a‧‧‧氣體入口
21b‧‧‧氣體出口
21c‧‧‧平臺
22‧‧‧有機酸供給單元
22a‧‧‧槽
22b‧‧‧有機酸
22c‧‧‧容器
23a,23b,23c‧‧‧傳送單元
24‧‧‧第二腔室
24a‧‧‧氣體入口
24b‧‧‧紫外線燈
24c‧‧‧平臺
25‧‧‧覆晶接合機
26‧‧‧第三腔室
26a‧‧‧推壓單元
26b‧‧‧壓板
26c‧‧‧平臺
29‧‧‧腔室
29a‧‧‧紫外線燈
29b‧‧‧收納部
29c‧‧‧窗口
29d‧‧‧氣體入口
29e‧‧‧氣體出口
29f‧‧‧平臺
30‧‧‧第一電子組件
31‧‧‧第一矽基板
32‧‧‧第二矽基板
33a‧‧‧第一鈍化膜
33b‧‧‧第二鈍化膜
34a‧‧‧第一電極墊
34b‧‧‧第二電極墊
35a‧‧‧第一電極
35b‧‧‧第二電極
36‧‧‧晶粒
40‧‧‧第二電子組件
42‧‧‧第二腔室
50‧‧‧電子裝置製造設備
51‧‧‧第一腔室
52‧‧‧第二腔室
53‧‧‧連接單元
54‧‧‧傳送導軌
55‧‧‧平臺
56‧‧‧紫外線燈
57‧‧‧推壓單元
58‧‧‧壓板
59‧‧‧電子裝置
60‧‧‧電子裝置製造設備
61‧‧‧暫時接合材料
70‧‧‧金剛石刀具
73‧‧‧變質層
第1圖為藉由固相擴散接合法接合電子組件之處理的剖面圖；第2A至2C圖為說明接合第一和第二電極過程的放大剖面圖；第3圖為第一實施例中所使用的電子裝置之製造設備的結構圖；第4A到4K圖為根據第一實施例之電子裝置製造過程中的剖面圖；第5圖為在第一實施例中製造之電子裝置的剖面圖；第6A至6D圖為根據第二實施例之電子裝置製造過程 的剖面圖；第7圖為用於說明第二實施例中之實驗結果的視圖；第8圖是為根據第三實施例之電子裝置製造設備的剖面圖；第9圖為根據第四實施例之電子裝置製造設備的平面圖；第10圖為根據第四實施例之電子裝置製造設備的剖面圖；第11A到11G圖為說明根據第四實施例之電子組件製造方法的剖面圖；第12圖為根據第五實施例之電子裝置製造設備的剖面圖；第13A至13E圖為根據第六實施例之電子裝置的剖面圖。
在描述實施例之前，先描述初步的事項。
第1圖是說明藉由固相擴散接合法接合電子組件之過程的剖面圖。
在這個例子中，描述第一電子組件30和第二電子組件40之接合。
在這些電子組件中，第一電子組件30為電路板。第一電子組件30包括：第一電極墊(pad)34a和第一鈍化(passivation)膜33a，形成於第一矽基板31的表面上。
在第一電極墊34a上，由銅製成的柱狀第一電極35a 藉由電鍍形成。柱狀電極也稱為凸塊電極或柱電極。
另一方面，所述第二電子組件40是半導體元件。第二電子組件40包括第二電極墊34b和第二鈍化膜33b，形成於第二矽基板32的表面上。在第二電極墊34b上，由銅製成的柱狀第二電極35b是藉由電鍍形成。
第二電極35b的大小沒有特別的限定。在此例中，平面圖中每個第二電極35b具有方形(square)的形狀，其側邊約10μm。
然後，第一電極35a和第二電極35b在面朝下的第二電子組件40與第一電子組件30相對的狀態下由未圖示的覆晶接合機彼此對準。
為了便於對準，更好的是第一電極35a是大於所述第二電極35b。在這個例子中，平面圖中每個第一電極35a具有方形的形狀，其側邊約15μm。
第2A至2C圖是放大的剖面圖，示出第1圖中第一電極35a和第二電極35b的接合過程。
如第2A圖所示，在接合之前，每一個所述第一電極35a和第二電極35b皆包括複數個銅晶粒(crystal grains)36。然後，所述第一電極35a和第二電極35b的頂表面藉由化學機械研磨(CMP)平坦化，從而確保其間的粘附。藉由化學機械研磨，前述的晶粒36在所述第一電極35a和第二電極35b的頂表面被暴露出來。
接下來，如第2B圖所示，第一電極35a和第二電極35b藉由前述的覆晶接合機加熱及同時被相互壓抵。
此處，在這個過程中當加熱溫度低或推壓負載較小時，第一電極35a和第二電極35b之間的界面(boundary)處之晶粒36變得不連續，而這些第一電極35a和第二電極35b可能很容易地彼此分離。因此，為了要合併(merge)界面處的晶粒36，在這個過程中，第一電極35a和第二電極35b被加熱到高於銅晶粒36的再結晶溫度之溫度並且也以每凸塊大於20 gf的負載而作充份的彼此壓抵。
藉由在上述條件下加熱和推壓，如第2C圖所示，第一電極35a和第二電極35b之間的界面周圍的晶粒36係經合併，從而允許所述第一電極35a和第二電極35b被機械性地牢固連接。
然而，藉由使用這種方法，第一電子組件30和第二電子組件40可能在如上所述高溫300℃和高於20 gf的負載下發生損壞。
在下文中，參照附圖來描述實施例。
(第一實施例)
第3圖是第一實施例中電子裝置製造設備的組構圖。
根據第一實施例的電子裝置製造設備20包括第一腔室21、第二腔室24、覆晶接合機25和第三腔室26，其間並包括傳送單元23a、23b和23c。
第一腔室21係連接到有機酸供給單元22，並且提供含有機酸的氣體。第一腔室21、第二腔室24和第三腔室26各自連接到未圖示的真空泵，並可減壓。
第一到第三腔室21、24，和26之間有各自的傳送單 元23a至23c，未圖示的閥(valve)係經設置以保持在第一至第三腔室21、24和26中的氣密性。
第一實施例中，如第1圖所示，藉由使用電子裝置製造設備20，第一電子組件30和第二電子組件40係電性和機械性地利用下面的方式彼此連接。
第4A到4K圖是根據第一實施例之電子裝置製造過程中的剖面圖；。
如第4A圖所示，第一電子組件30和第二電子組件40被放置在第一腔室21內的平臺21c上。
在以下描述的例子，第一電子組件30和第二電子組件40是從晶圓切片(dice)的晶片。然而，以下過程也可能對晶圓進行。此外，以下過程也可能在第一電子組件30和第二電子組件40其中之一為晶圓而另一電子組件是從晶圓切片下的晶片的狀態下進行。
然後，在該狀態下，當由氣體入口21a供給含有機酸的氣體進入第一腔室21時，第一腔室21內額外的氣體則由氣體出口21b排出。
引入到第一腔室21內的氣體在有機酸供給單元22產生。有機酸供給單元22包括由惰性氣體如氮氣所充填的槽22a，和容納液體有機酸22b的容器22c。有機酸供給單元22為藉由讓惰性氣體起泡(bubbling)而產生含有機酸的氣體。
雖然沒有特別的限定，甲酸被用作在本實施例中的有機酸。若非甲酸，有機酸可以是羧酸如乙酸或草酸。
如第4B圖所示，在暴露於有機酸之前，第一電極35a的頂表面會因為銅自然氧化而包括厚度為5nm至10nm的銅氧化膜1。若非自然氧化膜，熱氧化銅膜可能形成其厚度要大於自然氧化膜的氧化膜1，舉例來說，厚度為約10nm至150nm。
當具有氧化膜1的第一電極35a之頂表面暴露於甲酸時，下述化學方程式(1)和(2)中所表示的任一個反應將依氧化膜1的成分發生。
CuO+2HCOOH → Cu(HCOO)2+H2O…(1)
CuO2+2HCOOH → Cu(HCOO)2+H2+O2…(2)
藉由這些反應，如第4C圖所示，第一電極35a的頂表面上形成含有甲酸銅的有機酸金屬膜2。
為了讓上述反應進行更加迅速，較佳是第一電極35a藉由併在第一腔室21內之未圖示的加熱器加熱至約120℃。
在第一實施例中，如後所述，包括非結晶或微晶銅層之銅變質層由有機酸金屬膜2形成。因此，為了不防止形成銅的變質層，較佳地，在此過程中的加熱溫度低於非結晶或微晶銅的再結晶溫度，即130℃。
第一腔室21內的壓力亦沒有特別的限定。然而，當氧化膜1為自然氧化膜時，氧化膜1是薄的並因此即使在減壓下可以完全形成有機酸金屬膜2。在第一實施例中，第一腔室21內的壓力被設定為約600 mTorr的減壓，且該過程進行30分鐘。
另一方面，當氧化膜1是較自然氧化膜厚度為大的熱氧化膜時，整個氧化膜1可以藉由將氧化膜1暴露在壓力高於大氣壓力的甲酸下而確實地形成有機酸金屬膜2。
注意，有機酸金屬膜2也可藉由與上述相同的反應形成於第二電極35b的頂表面上(參照第4A圖)。
接下來，如第4D圖所示，第一電子組件30和第二電子組件40使用傳送單元23a(參照第3圖)被轉移到第二腔室24。
如第4D圖所示，第二腔室24包括紫外線燈24b和平臺24c。第一電子組件30和第二電子組件40之第一電極35a和第二電極35b是以面向上的方式放置在平臺24c上。
於是，第一電極35a和第二電極35b的頂表面被暴露於紫外線燈24b所產生的紫外線光。
紫外線燈24b的光源沒有特別限定。然而，為了有效地分解在有機酸金屬膜2中的甲酸銅，較佳地，每一紫外線燈24b是具波長較分解甲酸銅所允許為短的準分子燈，例如，具波長為172nm的準分子燈。注意，此波長的紫外線光也被稱為真空紫外(VUV)光。
有機酸金屬膜2被上述如第4E圖所示的紫外線光照射。有機酸金屬膜2因此按照以下化學方程式(3)分解。
Cu(HCOO)2 → Cu+CO+CO2+H2…(3)
藉由該反應，如第4F圖所示，包含非晶狀的非結晶或微晶銅的銅變質層3形成在第一電極35a的頂表面。
紫外線的照射時間沒有特別的限制。在本實施例中， 所述紫外線的照射時間為約5分鐘至15分鐘。
此外，為了促進化學式(3)的分解反應，較佳地，第一電極35a被加熱至從約室溫(20℃)至約150℃的溫度範圍。
非結晶或微晶的變質層3之再結晶溫度為130℃。因此，當該過程進行的溫度高於130℃時，變質層3會再結晶。因此，較佳是第一電極35a在紫外線照射下的加熱溫度為低於非結晶或微晶銅的再結晶溫度130℃，例如，進行的溫度約120℃。
在每一第二電極35b的頂表面上，銅的變質層3藉由如相同於在第4A到4F圖說明的過程形成。
而後，如第4G圖所示，第一電子組件30和第二電子組件40被傳送到覆晶接合機25(參照第3圖)。在覆晶接合機25中，第一電極35a和第二電極35b彼此對準，然後第一電極35a和第二電極35b被加熱至100℃，並使用每電極5 gf至10 gf的負載推壓進行暫時接合。
第4H圖是一個此過程完成後被放大的剖面圖。如第4H圖所示，就在暫時接合之後，第一電極35a和第二電極35b的變質層3並未彼此合併。
較佳地，所述第一電極35a和第二電極35b之變質層3的表面在暫時接合前被暴露於紫外線光，以分解和除去變質層3表面上的有機物質，從而清潔其表面。注意，有機物質可能被氧化並藉由暴露變質層3於氧氣電漿中去除，而非暴露於紫外線光。
藉由以這樣一種方式除去有機物質，可能防止所述第一電極35a和第二電極35b之間由於有機物質造成的接合強度減小。
為了促進清潔，所述第一電極35a和第二電極35b可能在紫外線或氧氣電漿照射時被加熱到高於室溫的溫度。然而，為了防止變質層3的再結晶，較佳是第一電極35a和第二電極35b在加熱時的溫度上限被設定低於在變質層3中非結晶或微晶銅的再結晶溫度，即130℃，例如，可設定為約120℃。
接下來，如第4I圖所示，暫時彼此接合的第一電子組件30和第二電子組件40被傳送到第三腔室26。
如第4I圖所示，在第三腔室26包括其上放置第一電子組件30和第二電子組件40之平臺26c，且壓板26b設置為與平臺26c相對。
推壓單元26a係連接到壓板26b。藉由推壓單元26a的負載，位於壓板26b和平臺26c之間的所述第一電子組件30和第二電子組件40被推壓。推壓負載無特別限定。然而，例如在第一實施例中，推壓負載為每電極10 gf。
同一時間，第一電子組件30和第二電子組件40被加熱到150℃至250℃，其高於變質層3的再結晶溫度，持續約10分鐘至30分鐘。加熱由併在平臺26c之未圖示的加熱器進行。
第4J圖是所述第一電極35a和第二電極35b在以上述方式剛開始推壓後的剖面圖。
如第4J圖所示，在所述第一電極35a和第二電極35b的頂表面之變質層3是軟的，並因此變質層3可以很容易地在負載小於如第1圖下形變(deform)。因此，變質層3無間隙緊密接觸。
特別是，在氧化膜1(參見第4B圖)為熱氧化膜的情況下，變質層3是足夠厚的並能夠容易地形變。這可以實現在第一電極35a和第二電極35b之間更好的緊密接觸。
此外，在這個過程中，因為變質層3被加熱到高於變質層3的再結晶溫度，當變質層3的界面部分相互合併時，銅的結晶生長。
結果，如第4K圖所示，變質層3經由所述第一電極35a和第二電極35b機械性地牢固地彼此接合而轉化為銅結晶層3x。
在這裡，在藉由將非結晶或微晶銅結晶化(crystallizing)形成銅之結晶層3x中，銅晶粒尺寸較所述第一電極35a和第二電極35b中的為小。在本實施例的情況下，在所述第一電極35a和第二電極35b中的銅晶粒36尺寸大小是平均直徑約5μm，而在結晶層3x中之銅晶粒3y具有較小為約1μm到3μm的平均直徑。
此外，在第一電極35a和結晶層3x之間的接面(interface)中，某些情況下，在電極35a和結晶層3x中的銅晶粒取向(orientation)會變得不連續。這樣的狀態也發生在第二電極35b和結晶層3x之間的接面。
注意，在第一電極35a和第二電極35b表面上的氧化 膜可藉由在以上述的方式接合第一電極35a和第二電極35b前暴露其第一電極35a和第二電極35b的頂表面於含有機酸氣體，如甲酸來預先去除。
這可以抑制在所述第一電極35a和第二電極35b之間之接合接面上氧化膜的形成，因此可防止該第一電極35a和第二電極35b的接合因氧化膜受抑制。
此外，為了進一步減少氧化膜形成於接合接面中的風險，可能在組構成具有排除氧氣的環境(atmosphere)之第三腔室26內進行所述第一電極35a和第二電極35b的接合。這樣的環境例如是惰性氣體環境或真空環境。
注意，在第三腔室26內可能是含如甲酸之有機酸的環境。有機酸可以防止在所述第一電極35a和第二電極35b之間接合接面的氧化膜之形成， 這樣就完成了根據第一實施例中電子裝置的製造方法之基本過程。
第5圖為以上述方式製造的電子裝置59的剖面圖。
根據本實施例，所述第一電極35a和第二電極35b是通過(via)具有較低的再結晶溫度和比結晶銅軟的銅變質層3來接合。因此，相較於未形成變質層3的情況，施加到所述第一電極35a和第二電極35b的加熱溫度和負載可以減少，並且可以在較短時間內接合所述第一電極35a和第二電極35b。
這可以降低第一電子組件30和第二電子組件40在第一電極35a和第二電極35b接合過程中所受的熱和機械性 損傷。
此外，由於第一電極35a和第二電極35b可以在短時間內接合，它能夠增加電子裝置製造過程的產出並降低製造前述電子裝置的功率消耗，從而減少對環境的負擔。
此外，有機酸金屬膜2和變質層3可以形成在乾燥環境中。因此，不須要準備濕式製造設備，且電子裝置可以經由簡單的過程製造。
注意，第一實施例不限於上述描述。例如，在上述的說明中，於所述第一電極35a和第二電極35b中皆形成變質層3。然而，變質層3也可能僅形成在第一電極35a或僅在第二電極35b。
此外，雖然第一電子組件30為電路板而第二電子組件40為半導體裝置，但要接合的電子組件並不限於此組合。例如，為電路板之第一電子組件也許可以彼此接合。或者，為半導體元件之第二電子組件也許可以彼此接合。這在以下的實施例中的情況也是如此。
此外，在第3圖的例子中，所有的腔室21、24和26和覆晶接合機25皆經由傳送單元23a、23b和23c連接。然而，所有的腔室21、24，和26和覆晶接合機25未必一定要連接。例如，第一電子組件30和第二電子組件40可能在暫時相互接合後於轉移到第三腔室26前在覆晶接合機25內被暴露於空氣中。當其暴露時間不超過10小時時，第一電子組件30和第二電子組件40之間的接合強度也不會降低，從而避免了影響電子組件的可靠性。
(第二實施例)
第一實施例中，氧化膜1(第4B圖)被用於形成非結晶或微晶銅的變質層3(第4F圖)。
在第二實施例中，機械加工是用來將變質層增厚使其較第一實施例中的變質層更厚。
第6A至6D圖為根據第二實施例之電子裝置製造過程的剖面圖。在第6A至6D圖中，在第一實施例中描述的那些相同的元件被給予相同的元件符號，並且在下面省略其說明。
首先，如第6A圖所示，第一電極35a的表面藉由金剛石刀具70切割以在第一電極35a的表面形成非結晶或微晶銅的變質層73。
在本實施例中，第一電極35a之表面以以下的條件切割：例如，金剛石刀具70以圓周速度為15米/秒至20米/秒旋轉，金剛石刀具70在基板上橫向位移約為每轉動一圈20μm。
這種機械加工會擾亂第一電極35a之表面的銅結晶體。因此，如第6B圖所示，不具有晶體結構的銅變質層73形成於從第一電極35a的表面100nm至200nm範圍內的深度。
使用相同的方法，銅變質層73形成於如第6C圖所示之第二電極35b的表面層。
然後，執行第一實施例中描述第4A至4F圖的過程以獲得如第6D圖所示之橫截面結構。如第6D圖所示，在 每一個第一電極35a和第二電極35b中，藉由UV照射而從有機酸金屬膜2得到的變質層3(參照第4E圖)係形成在藉由前述機械加工方式得到的變質層73上。
此後，執行第一實施例中之第4I至4K圖的過程以完成如第5圖所示之電子裝置的基本結構。
根據如上所述之本實施例，藉由機械加工形成的銅變質層73可全然較第一實施例中由氧化膜1形成的銅變質層3更厚。因此，變質層可在第一電極35a和第二電極35b之接合過程中更彈性地形變。由於這種軟變質層3和73，第一電極35a和第二電極35b可以更佳的方式緊密接觸。
接著，描述本實施例之實驗結果。
執行此實驗測試以本實施例製造的電子裝置59(參照第5圖)之晶粒剪力強度(die shear strength)。晶粒剪力強度定義為當第一電極35a和第二電極35b沿由所述第一電極35a和第二電極35b間的接面剝離時第二電子組件40朝基板橫向所被施加最大的力。
實驗結果於第7圖中說明。
在第7圖中，橫軸表示第4J圖的過程中對第一電極35a和第二電極35b的加熱溫度。第7圖中的縱軸表示上述的晶粒剪力強度。
第7圖中之圖示A表示在本實施例中獲得的實驗結果。第7圖中圖示B表示在只有執行第6A圖所示之機械加工且沒有形成從第6D圖之氧化膜1得到的變質層3的情況下之實驗結果。第7圖中之圖示C表示未機械加工(第 6A圖)與未形成變質層3(第6D圖)的第一電極35a和第二電極35b直接接合的比較例的實驗結果。
上述的晶粒剪力強度取決於第一電極35a和第二電極35b間之接面的狀態。
例如，在範圍I中的晶粒剪力強度為小至約0克/晶片至3000克/晶片，此處第一電極35a和第二電極35b之間有清楚的接面，並因此第一電極35a和第二電極35b之間的接合強度是低的。
在範圍II中晶粒剪力強度為3000克/晶片至7000克/晶片，此範圍內電極間的接面消失，並且第一電極35a和第二電極35b實質合併。然而，在範圍II中，晶粒剪力強度對電極來說並不足以被視為完全合併。因此，在電極間形成前面描述的結晶層3x。
另一方面，在範圍III中晶粒剪力強度為7000克/晶片至12000克/晶片，所述第一電極35a和第二電極35b實質地完全合併，且結晶層3x並未存在其間。
如第7圖所示，比較在相同的接合溫度下的圖示，比較例之圖示C中的晶粒剪力強度是最小的。
至於對只機械加工的圖示B，晶粒剪力強度在接合溫度為175℃時高於比較例但仍不夠高。
在另一方面，在本實施例中的圖示A中，接合溫度為175℃時的晶粒剪力強度是在僅有加工之情況下的大約兩倍。
因此，可以確認的是如本實施例中機械加工和紫外線 照射的組合在約175℃的低接合溫度下是可有效的增加接合強度。既然在這種方式下約175℃的低接合溫度下接合強度是夠高，第一電極35a和第二電極35b在本實施例中不須被加至高溫來進行接合。因此，第一電子組件30和第二電子組件40是不太可能因熱被損壞。
(第三實施例)
第一實施例中，如第3圖所示，第一腔室21用於暴露於有機酸和第二腔室24用於UV照射。
另一方面，在本實施例中，描述關於一種電子裝置的製造設備，在該設備中第一電子組件30和第二電子組件40可以在單一腔室內暴露於有機酸和紫外線光。
第8圖為根據本實施例之電子裝置製造設備的剖面圖。
如第8圖所示，本實施例的電子裝置製造設備60包括腔室29和容納在腔室29中的平臺29f。在平臺29f上方，設有由耐熱玻璃製成的窗口(window)29c。腔室29由窗口29c分成兩個隔間(compartments)。在這兩個隔間，窗口29c上面的隔間為用於容納紫外線燈29a的收納部29b。
另一方面，窗口29c下方的隔間設置有連接至有機酸供給單元22的氣體入口29d和一個氣體出口29e。平臺29f包括未圖示的加熱器，並且能夠將第一電子組件30和第二電子組件40加熱到預定溫度。
在該電子裝置製造設備60中，每個所述第一電子組件30和第二電子組件40是被暴露於如甲酸的有機酸，這是 通過氣體入口29d的供給而形成有機酸金屬膜2(參照第4C圖)。
此外，有機酸金屬膜2是以來自紫外線燈29a的紫外線光照射，以形成非結晶或微晶銅的變質層3(參照第4F圖)。
以這種方式，在本實施例中每一個第一電子組件30和第二電子組件40可以在單一的腔室29被暴露於紫外線光和有機酸中。因此，本實施例的設備組構可以比第一實施例易於製造。
此外，這樣一種方式下，僅使用單一的腔室29，消除了類似在第一實施例中第一電子組件30或類似者從用於曝露於有機酸的第一腔室21傳送到用於照射紫外線的第二腔室24的需要，因此可減少傳輸時間。
此外，容納部29b藉由窗口29c與平臺29f分離。這可以消除由平臺29f發出的輻射熱(radiation heat)可能損壞紫外線燈29a的風險。因此，平臺29f的溫度可以設定為高於窗口29c不存在的情況。因此，第一電子組件30和第二電子組件40可以在很寬的溫度範圍內用紫外光照射。
注意該平臺29f可能設有未圖示的升降機構，使第一電子組件30和紫外線燈29a或第二電子組件40和紫外線燈29a之間的距離為可調節。在這種情況下，藉由調節上述的距離來使紫外線照射於第一電子組件30和第二電子組件40的強度最大化(maximize)，如此第一電子組件30和第二電子組件40可被有效地用紫外線照射。
(第四實施例)
第四實施例中，第一電子組件30和第二電子組件40以下述的方式藉由暫時接合材料而彼此固定。
第9圖為第四實施例中所使用之電子裝置製造設備的平面圖。
如第9圖所示，本實施例的電子裝置製造設備50包括第一腔室51和第二腔室52。
插入一對傳送導軌54通過第一腔室51和第二腔室52。在傳送導軌54上設置沿軌道54之延伸方向為可移動的平臺55。
該第一腔室51包括在側表面上的紫外線燈56，並連接到有機酸供給單元22。
注意，在第一腔室51和第二腔室52中每一個的側表面上，設有可讓平臺55進出之未圖示的閥門。所述閥門保持第一腔室51和第二腔室52內的氣密性。
第10圖為在第9圖中所示之電子裝置製造設備的剖面圖。
如第10圖所示，第二腔室52包括壓板58和推壓單元57。推壓單元57是可擴張的。壓板58向上和向下移動係藉由推壓單元57的擴張運動。
第一腔室51和第二腔室52之間設置連接單元53。連接單元53的內部製造為具氣密性。因此，放置在平臺55上的電子組件可以從第一腔室51移動到第二腔室52，而不被暴露於空氣中。
在下文中，描述使用製造設備50製造電子裝置的方法。
第11A到11G圖為說明根據本實施例之電子裝置製造過程的剖面圖。在第11A到11G圖中，與那些在第一實施例中描述的相同的元件被給予相同的元件符號，並且在下面省略其說明。
首先，如第11A圖所示，在準備好第一電子組件30之後，暫時接合材料61係附接(attach)於第一電子組件30的表面，如第11B圖所示。
暫時接合材料61無特別的限定，但較佳為藉由熱而揮發、熔化或分解以產生粘性的材料。這樣的材料的實例包括具有分子量約2000的聚乙二醇(PEG2000)。聚乙二醇具有約50℃的熔點，並在室溫下是固體。然而，當被加熱至部分熔融時，聚乙二醇會粘著到第一電子組件30。
另外，若非為聚乙二醇，暫時接合材料61可以是由聚丙二醇、二甘醇丁醚醋酸、聚酯和多羥基聚醚所組成之群組中的任何一者。或者，暫時接合材料61可以是由乙烯及聚磺酸和乙烯乙酸酯的其中任一構成的共聚物。另外，暫時接合材料61可以是其揮發溫度在約100℃至200℃的由乙酸酐、琥珀酸酐和丙烯酸甲酯所組成之群組中的任何一者。再者，暫時接合材料61可以是在約100℃的溫度下容易分解的甲基丙烯酸甲酯或甲基丙烯酸乙酯。
鑑於生產率，較佳是暫時接合材料61是在第一電子組件30在從晶圓切出前使用。
此後，如第11C圖所示，使用未圖示的覆晶接合機將第二電子組件40放置在第一電子組件30之上，並且第一電極35a和第二電極35b係彼此對準。
然後，在由覆晶接合機使用加熱下，第二電子組件40被加熱到例如120℃，持續15秒，以熔化暫時接合材料61。因此，第一電子組件30和第二電子組件40被暫時接合，此時第一電極35a和第二電極35b之間有間隙。
接下來，如第11D圖所示，第一電子組件30和第二電子組件40被放置在平臺55上，並轉移到第一腔室51。
含有如甲酸之有機酸氣體通過氣體入口51a被引入到第一腔室51。第一電極35a和第二電極35b的頂表面因此被暴露於有機酸。因此，自然氧化膜和有機酸在第一電極35a和第二電極35b之表面相互反應而形成有機酸金屬薄膜2(參見第4C圖)。
接著，停止引入含有有機酸的氣體，腔室51中的氣體從氣體出口51b排出。
然後，如第11E圖所示，第一電極35a和第二電極35b之頂表面係用位於第一電極35a和第二電極35b旁的紫外線外燈56所產生之紫外線光照射，從而在第一電極35a和第二電極35b的頂表面形成銅變質層3(參照第4F圖)。
在本實施例中，紫外線燈56係設置於如上所述的第一腔室51之側表面上。因此，藉由紫外線燈56產生的紫外線光進入所述第一電極35a和第二電極35b之間的間隙，因此第一電極35a和第二電極35b的頂表面可以可靠地用 紫外線光照射。
請注意平臺55可能包括未圖示的旋轉機構和升降機構，藉由驅動這些機構，第一電極35a和第二電極35b的頂表面可能均勻地被紫外線光照射。
接下來，如第11F圖所示，平臺55將第一電子組件30和第二電子組件40沿著傳送導軌54移動到第二腔室52內。
然後，所述第二電子組件40被壓板58推壓，同時第一電極35a和第二電極35b在低於130℃(變質層3的再結晶溫度)之溫度下被加熱(參見第4H圖)。因此，第一電極35a和第二電極35b被暫時接合。注意，可以通過被併在壓板58或平臺55中未圖示的加熱器所加熱。
此後，當保持壓板58在推壓的狀態下，所述加熱器將第一電子組件30和第二電子組件40的加熱溫度上升至170℃，因此，暫時接合材料61的聚乙二醇被揮發和去除。
如第11G圖所示，當繼續用壓板58推壓時，第一電子組件30和第二電子組件40被加熱至150到250℃。此狀態保持約30分鐘來將變質層3結晶化(參照第4H圖)，從而接合所述第一電極35a和第二電極35b。因此，完成如第5圖所示之電子裝置59。
根據如上所述之本實施例，當第一電子組件30和第二電子組件40暫時接合時，第一電子組件30和第二電子組件40係暴露於有機酸和紫外線光。因此，電子裝置可以較在第一電子組件30和第二電子組件40個別受有機酸和紫 外線光的情況下更有效地製造。
此外，由於連接單元53的內部(參照第10圖)保持氣密性，銅變質層3在從第一腔室51向第二腔室52途中可以避免被暴露於空氣中。因此，這可能抑制變質層3的再氧化，藉此避免第一電極35a和第二電極35b間的接合強度因氧化而降低。
雖然如上述之暫時接合材料61的材料會藉由加熱揮發，但環氧樹脂糊或環氧樹脂膜也可能被用作暫時接合材料61。在這種情況下，暫時接合材料61不會因為加熱而揮發，可以留下作為底部填充樹脂的一部分。
(第五實施例)
在第四實施例中，所述第一腔室51和第二腔室52係如第9和10圖所示使用。對照之下，在本實施例中，所述電子裝置製造設備的此兩個腔室功能是一致的。
第12圖為根據本實施例之電子裝置製造設備的剖面圖。第12圖中，在第四實施例中描述的那些相同的元件被給予相同的元件符號，並且在下面省略其說明。
製造設備80包括設有紫外線燈56的腔室53、推壓單元57和壓板58。腔室53透過氣體入口53a自有機酸供給單元22供給含有如甲酸之有機酸氣體。
此外，在腔室53中，第一電子組件30係放置在平臺81c上。
根據這一點，複數個過程如有機酸的供應，紫外線光照射，和將第二電子組件40壓抵第一電子組件30可以在 單一的製造設備80進行，因此，設備的組構可以簡化。
(第六實施例)
第一實施例中，所述第一電極35a和第二電極35b由銅製成。在本實施例中，事先於第一電極35a和第二電極35b上形成錫層。
第13A至13E圖為根據第六實施例之電子裝置製造過程中的剖面圖。在第13A至13E圖中，與第一實施例中描述的那些相同的元件被給予與第一實施例中相同的元件符號，並且在下面省略其說明。
首先，如第13A圖所示，如錫層66的低熔點金屬層係藉由電鍍形成於每個第一電極35a的頂表面上，其厚度約2至5μm。當錫層66被留在空氣中時，含有氧化錫或二氧化錫的氧化膜67在錫層66的表面上形成。
接下來，如第13B圖所示，錫層66的頂表面被暴露於有機酸。在這裡，甲酸被用作有機酸。然後，氧化膜67在約120℃的溫度下與甲酸持續反應約30分鐘。因此，形成於錫層66表面之自然氧化膜67按照如化學方程式(4)或化學方程式(5)進行反應。
SnO+2HCOOH → Sn(HCOO)2+H2O…(4)
SnO2+2HCOOH → Sn(HCOO)2+H2+O2…(5)
藉由這些反應，含有甲酸錫的有機酸金屬膜68形成於第一電極35a的頂表面上。注意，由於在這個過程中的加熱，由錫和銅構成的金屬複合物(Cu6Sn5)層66a形成於由銅製成的第一電極35a與錫層66之間的接面中。
接著，有機酸金屬膜68的表面藉由紫外線光照射。因此有機酸金屬膜68按照以下的反應方程式(6)分解。
Sn(HCOO)2 → Sn+CO+CO2+H2…(6)
藉由上述反應所產生的錫形成如第13C圖所示之不具結晶結構的非結晶或微晶錫之變質層69。
如上所述的相似過程也進行於第二電極35b，從而在第二電極35b的頂表面上形成錫變質層69。
接下來，如第13D圖所示，在第一電子組件30和第二電子組件40由未圖示的覆晶接合機對準後，第一電子組件30和第二電子組件40被加熱及彼此壓抵。在此，如第13D圖所示，第一電子組件30和第二電子組件40在加熱溫度為150℃下持續推壓5分鐘。
因此，如第13E圖所示，變質層69結晶化且和錫層66彼此合併，從而將第一電極35a和第二電極35b彼此接合。注意的是，由於在這個過程中的加熱，金屬複合物層66a長得較厚。
在此種方式中，完成如第5圖所示之電子裝置59的基本結構。
根據本實施例，所述第一電極35a和第二電極35b通過為低熔點金屬錫的變質層69接合。因此，第一電極35a和第二電極35b可以在較使用銅變質層3(參照第4J圖)之第一實施例中為低的溫度進行較短時間的接合。這可以進一步減少對所述第一電子組件30和第二電子組件40的損壞。
注意，本實施例不限於上述例子。雖然如上所述，錫層66係皆形成在第一電極35a和第二電極35b上，但錫層66亦可能僅形成在第一電極35a或僅在第二電極35b。
根據上述實施例，暴露於有機酸的第一電極之頂表面被紫外線光照射，以形成由非結晶層、微晶層或類似者構成之變質層。第一電極和第二電極接著以變質層夾在二者之間進行接合。變質層具有較低的再結晶溫度且較結晶層軟。因此有可能減少第一和第二電極在接合過程中之溫度和施加的負載，從而減少第一和第二電子組件的損壞。
3x‧‧‧結晶層
30‧‧‧第一電子組件
31‧‧‧第一矽基板
32‧‧‧第二矽基板
33a‧‧‧第一鈍化膜
33b‧‧‧第二鈍化膜
34a‧‧‧第一電極墊
34b‧‧‧第二電極墊
35a‧‧‧第一電極
35b‧‧‧第二電極
40‧‧‧第二電子組件
59‧‧‧電子裝置

Claims (15)

  1. 一種製造電子裝置的方法，該方法包括：將第一電子組件的第一電極之頂表面暴露於有機酸；以紫外線光照射暴露於該有機酸的該第一電極之該頂表面；以及藉由加熱和推壓該第一電極和第二電子組件的第二電極彼此而將該第一電極和該第二電極予以接合。
  2. 如申請專利範圍第1項所述之製造電子裝置的方法，該方法復包括：暴露該第二電極的頂表面於該有機酸；以及以紫外線光照射暴露於該有機酸的該第二電極之該頂表面上。
  3. 如申請專利範圍第1項或第2項所述之製造電子裝置的方法，該方法復包括：在該第一電極和該第二電極接合前使用暫時接合材料將該第一電子組件和該第二電子組件暫時接合。
  4. 如申請專利範圍第3項所述之製造電子裝置的方法，其中，該暫時接合材料係接合該第一電極和該第二電極時受熱而揮發、熔化或分解的材料。
  5. 如申請專利範圍第1項所述之製造電子裝置的方法， 該方法復包括：在暴露該第一電極的該頂表面於該有機酸之前，熱氧化該第一電極的該頂表面。
  6. 如申請專利範圍第1項所述之製造電子裝置的方法，其中，接合該第一電極和該第二電極係在排除氧氣的環境或在含有有機酸的環境中執行。
  7. 如申請專利範圍第1項所述之製造電子裝置的方法，該方法復包括：在接合該第一電極和該第二電極前，暴露該第一電極和該第二電極之該頂表面的至少其中一個於紫外線光或氧電漿。
  8. 如申請專利範圍第1項所述之製造電子裝置的方法，其中，在接合該第一電極和該第二電極時，該第一電極和該第二電極被加熱到溫度高於變質層之再結晶溫度，該變質層係藉由該紫外線光之照射而形成在該第一電極之該頂表面上。
  9. 如申請專利範圍第1項所述之製造電子裝置的方法，該方法復包括：在暴露該第一電極的該頂表面於該有機酸前，對該第一電極的該頂表面進行切割。
  10. 一種電子裝置，包括：第一電子組件，包括第一電極；以及 第二電子組件，包括接合到該第一電極的第二電極，其中，結晶層形成在該第一電極和該第二電極之間。
  11. 如申請專利範圍第10項所述之電子裝置，其中，該結晶層的晶粒之平均直徑較該第一電極和該第二電極的晶粒平均之直徑小。
  12. 如申請專利範圍第10項或第11項所述之電子裝置，其中，該第一電極、該第二電極和該結晶層係由同一種材料製成。
  13. 如申請專利範圍第12項所述之電子裝置，其中：該材料為銅。
  14. 一種電子裝置製造設備，包括：腔室；平臺，係設置在該腔室中，並且具有電極的電子組件係放置在該平臺上；以及，紫外線燈，係設置在該腔室中，且組構成使用紫外線光照射該電極，其中，該紫外線燈設置於該紫外線燈能夠將該紫外線光照射到該電極之頂表面的位置。
  15. 一種電子裝置製造設備，包括：第一腔室，係將氧化膜由包括在第一電子組件的第一電極和包括在第二電子組件的第二電極之其中至 少一者的表面去除；第二腔室，係連接到該第一腔室，且將該第一電極和該第二電極之至少一者用紫外線光照射；接合機，係連接到該第二腔室且組構成對準該第一電極和該第二電極；以及第三腔室，係連接到該接合機，且該第一電子組件和該第二電子組件在其中受到加熱及被彼此壓抵。
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TWI475620B (zh) 2015-03-01
JP6011074B2 (ja) 2016-10-19
US20140342504A1 (en) 2014-11-20
CN103212776A (zh) 2013-07-24

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